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DO-15X Axial Lead

DO-214AA Surface Mount

TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected

SIDAC
(95 - 330 Volts)
9

General Description
The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac switches on through a negative resistance region to a low on-state voltage. Conduction will continue until the current is interrupted or drops below the minimum holding current of the device. Teccor offers the complete voltage range (95-330) over three different packages: • • • • TO-92 (95-280 volts) Axial lead DO-15X (95-280 volts) Surface Mount DO-214AA (95-280 volts) TO-202AB (190-330 volts)

Applications
• • • • • • • • • High voltage lamp ignitors Natural gas ignitors Gas oil ignitors High voltage power supplies Xenon ignitors Over voltage protector Pulse generators Fluorescent lighting ignitors HID lighting ignitors

Teccor’s Sidacs feature glass passivated junctions to ensure a rugged and dependable device capable of withstanding harsh environments. Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more information.

Features
• • • AC circuit oriented Glass-passivated junctions High surge current capability

Teccor Electronics (972) 580-7777

9-1

SIDAC

With proper component selection this circuit will produce three pulses for ignition of Osram lamp types such as HQI-T70W. A typical circuit for a metal halide lamp ignitor is shown in the schematic.0 1. (8) See Figure 9. ≥ 1/16" (1.7 for IBO vs junction temperature.Electrical Specifications Part No. See Figure 9. Lead solder temperature is a maximum of +230°C for 10 seconds maximum. See Figure 9.0 1. • • SIDAC 9-2 Teccor Electronics (972) 580-7777 .0 1. HQIT150W.0 1. the load impedance should be near or less than switching resistance.14 for test circuit.15 for clarification of Sidac operation. Electrical Specification Notes (1) (2) (3) (4) (5) (6) (7) See Figure 9.3. Storage temperature range (TS) is -65°C to +150°C. Figure 9.2 for IH vs case temperature. IT(RMS) VDRM VBO Breakover Voltage 50/60Hz Sine Wave (1) IDRM IBO Type On-State Repetitive RMS Current Peak TJ≤125°C Off-State 50/60Hz Voltage Sine Wave (7) (8) Repetitive Breakover Current Peak 50/60Hz Off-State Current Sine Wave 50/60Hz Sine Wave V=VDRM DO-15X TO-92 TO-202AB DO-214AA G Package E Package F Package S Package See “Package Dimensions” section for variations. The case (TC) or lead (TL) temperature is measured as shown on the dimensional outline drawings. Junction temperature range (TJ) is -40°C to +125°C. (10) Teccor's new. TL ≤ 100°C for DO-15X and TL ≤ 90°C for DO-214AA.0 1.0 1. See Figure 9. TC ≤ 90°C for TO-92 Sidac and TC ≤ 105°C for TO-202 Sidacs.0 Volts MIN ±90 ±90 ±90 ±90 ±90 ±90 ±180 ±180 ±190 ±190 ±190 ±190 Volts MIN 95 104 110 120 130 140 190 205 220 220 240 270 MAX 113 118 125 138 146 170 215 230 250 250 280 330 µAmps MAX 5 5 5 5 5 5 5 5 5 5 5 5 µAmps MAX 10 10 10 10 10 10 10 10 10 10 10 10 General Notes • • • All measurements are made at 60Hz with a resistive load at an ambient temperature of +25°C unless otherwise specified.0 1.0 1.59mm) from case. RθJA for TO-202 Type 23 and Type 41 is 70°C/watt. See “Package Dimensions” section of this catalog.6 for VBO change vs junction temperature. See Figure 9.0 (10) 1. and HQI-T250W which require a minimum of three pulses at 4kV magnitude and >1µ s duration each at a minimum repetition rate of 3. improved series of sidacs is designed to ensure goodcommutationathigherswitchingfrequencies asrequiredinignitor circuits for high intensity discharge (HID) lighting.0 1.3kHz.1 for more than one full cycle rating. (9) For best Sidac operation.0 1. K1050E70 K1100E70 K1200E70 K1300E70 K1400E70 K1500E70 K2000E70 K2200E70 K2400E70 K2500E70 K1050G K1100G K1200G K1300G K1400G K1500G K2000G K2200G K2400G K2500G K2000F1 K2200F1 K2400F1 K2401F1 K2500F1 K3000F1 K2500S K1050S K1100S K1200S K1300S K1400S K1500S K2000S K2200S K2400S Amps MAX 1.

5 1.1 0.5 1.5 1.5 1.1 0.5 1.0 6.7 16.SIDAC IH Dynamic Holding Current 50/60Hz Sine Wave R = 100Ω (3) (4) VTM Peak On-State Voltage IT = 1 Amp ITSM Peak One Cycle Surge Current 50/60Hz Sine Wave (Non-Repetitive) (5) RS Switching Resistance R (V –V ) BO S = ------------------------------(I – I ) S BO dVq/dt dv/dt di/dt Critical Rate-of-Rise of On-State Current S Critical Critical Rate-of-Rise Rate-of-Rise of Turn-off of Off-State Voltage at Voltage at 8kHz Rated VDRM TJ ≤ 100°C mAmps TYP 60 60 60 60 60 60 60 60 60 60 60 60 MAX 150 150 150 150 150 150 150 150 150 150 150 150 E 1.5 1.5 1.1 0.5 1. 2.7 16.7 16.5 1.1 0.0 1.7 16.7 16.0 1.5 1.1 0.0 3.5 Volts Max Package G 1.5 1.5 1.5 1.0 3.0 3.5 1.1 0.0 3.7 16.1 Peak Surge Current vs Surge Current Duration THERMAL RESISTANCE (STEADY STATE) RθJC [RθJA] °C/W (TYPICAL) E 35 [95] G 18 [75] F (6) 7 [45] S 30 [85] Teccor Electronics (972) 580-7777 9-3 SIDAC .0 4.1 0.5 1.7 16.7 16.5 50/60Hz Sine Wave (9) Amps 60Hz 20 20 20 20 20 20 20 20 20 20 20 20 50Hz 16.0 3.5 1.1 Volts/ µSec MIN 20 20 20 20 20 20 20 20 20 42 20 20 Volts/ µSec MIN 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 Amps/µSec TYP 150 150 150 150 150 150 150 150 150 150 150 150 100 Peak Surge (Non-Repetitive) On-State Current [I(TSM)] .1 0.5 1.0 BLOCKING CAPABILITY MAY BE LOST DURING AND IMMEDIATELY FOLLOWING SURGE CURRENT INTERVAL OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION TEMPERATURE HAS RETURNED TO STEADY-STATE RATED VALUE.1 0.0 0.5 3.0 F S 1.7 16.Full Cycles V-I Characteristics Figure 9.Amps SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: IT RMS Maximum Rated Value at Specified Junction Temperature 40 20 10 8.5 1.7 16.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.1 2.5 1.7 kΩ MIN 0.7 16.0 10 100 1000 Surge Current Duration .

% +2 0 -2 -4 -6 -8 -10 -12 -40 -20 0 0.8.Amps Figure 9.0.0.33 µF 5.Amps 600 400 200 100 80 60 40 20 10 8 6 4 2 1 0.4 0.0 80 Ratio of 60 .6 2 x 10-3 f=1 di/dt Limit Line No n-R ITRM VBO Firing Current Waveform ep Re ea on f=1 f=1 00 Hz Fr 0H eq z ue nc yf =5 Hz TJ=125ºC Max Repetitive Peak Breakover Current (IBO) Multiplier pe ted to l/f titi 9 8 7 6 5 4 3 2 V=VBO kH z f=5 f=1 f=20 kH Hz z 0k 1 20 30 40 50 60 70 80 90 100 110 120 130 kHz Junction Temperature (TJ) . STEP-UP TRANSFORMER BALLAST Percentage of VBO Change .15 µF 220V/240V 50/60Hz K2401F1 METAL HALIDE LAMP 5 .6µH 0.22 .5 ˚ 100 1.5 TO 40 -9 TO 2 -2 an 02 TO TY PE 23 -2 02 d TY DO PE -2 14 & 1 41 0 -40 -15 +25 +65 +105 +125 25 20 0 0.8 0.6K .V.8 1.C ˚ 4 6 8 1 x 10-2 2 4 6 8 1 x 10-1 2 4 6 81 Pulse base width (to) .60 Hz LOAD: Resistive or Inductive FREE AIR RATING 2.6 0.2K 5W +25 +20 +40 +60 +80 +100 +120 +140 Typical Metal Halide Ignitor Circuit Junction Temperature (TJ) .˚C Figure 9.˚C 140 CURRENT WAVEFORM: Sinusoidal .3 Typical Metal Halide Ignitor Circuit Figure 9. Figure 9.0 120 IH IH(TC=25 C) 1.4 Repetitive Peak On-State Current (I TRM) vs Pulse Width at Various Frequencies Figure 9.C ˚ RMS On-State Current [IT(RMS)] .2 Normalized DC Holding Current vs Case/Lead Temperature Figure 9.5 Maximum Allowable Ambient Temperature vs On-State Current +4 H.Electrical Specifications Maximum Allowable Ambient Temperature (TA) .0 Case Temperature (TC) .7 Normalized Repetitive Peak Breakover Current vs Junction Temperature SIDAC 9-4 Teccor Electronics (972) 580-7777 .mSec.1 .6 Normalized V BO Change vs Junction Temperature Repetitive Peak On-State Current (ITRM) .2 0.

01µF 400V Figure 9.10 Comparison of Sidac vs SCR Figure 9.8 0.450V 120VAC 60Hz K2200F1 4KV SIDAC 200400V TRIGGER TRANSFORMER 20:1 .11 Ignitor Circuit (Low Voltage Input) 2.8 1.Watts 1.6 2.4 1.22µF LAMP 120 VAC 60 Hz 16 mH "E".8 2.7 kΩ - 50V ½W + 24 VAC 60 Hz TO-202 "F" Package K1200E SIDAC 200V 4.2 0 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: See Figure 9.6 0.7 µF 100V 1.4 1.0 1.7 µF TO-92.6 1.8 3.0 Average On-State Power Dissipation [PD(AV)] .13 Xenon Lamp Flashing Circuit Teccor Electronics (972) 580-7777 9-5 SIDAC . IGNITOR Positive or Negative Instantaneous On-State Voltage (vT) .2 3.0 0.4 3.3 KΩ 0.12 Typical High Pressure Sodium Lamp Firing Circuit 100Ω SCR SIDAC 2w - 10 µF 250V + XENON LAMP 20 MΩ 100-250 VAC 60 Hz 100-250 VAC 60 Hz + 10 µF .4 0.4 0. DO-214AA & DO-15X "E".8 1.5 KΩ 0.4 2. "S" & "G" Packages TO-92.Amps Figure 9.6 1.V.9 Power Dissipation (Typical) vs On-State Current Figure 9.6 H.0 3.2 0.Volts Figure 9.8 On-State Current vs On-State Voltage (Typical) Figure 9.2 1.0 2.SIDAC 9 TL =25˚C 8 4.47µF 400V LAMP SIDAC 7.8 1.6 0.2 1.2 2. "S" and "G" Packages Positive or Negative Instantaneous On-State Current (iT) .Amps 7 6 5 4 3 10 µF + 100V + 4. DO-214AA & DO-15X 220 VAC 60 Hz 0.0 120 VAC 220 VAC RMS On-State Current [IT(RMS)] .2 2.15 BALLAST BALLAST TO-202 "F" Package SIDAC 3.2 µF 2 1 0 0 0.

63 A 0 tw ≈ 3 ms (See Note A) tw 100 mS INPUT 50Ω 2N6127 (or equivalent) 50Ω RBB2 = 100Ω + VBB2 =0 + VCC = 20 V IC MONITOR SIDAC VBO COLLECTOR VOLTAGE 10 V VCE(sat) RS = 0. Figure 9.16 Relaxation oscillator Using a Sidac VCE MONITOR (See Note B) RBB1 = 150Ω 100 mH TIP-47 INPUT VOLTAGE 0V 5V COLLECTOR CURRENT 0. The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the transistor could be destroyed.63A.14 Dynamic Holding Current Test Circuit for Sidacs Figure 9.17 Sidac Added to Protect Transistor for Typical Transistor Inductive Load Switching Requirements SIDAC 9-6 Teccor Electronics (972) 580-7777 .VBO I BO V -V IN TM IH (MIN) t Figure 9.Electrical Specifications PUSH TO TEST S1 SWITCH TO TEST IN EACH DIRECTION VBO VBO VBO IPK TRACE STOPS 100-250 VAC 60 Hz 100 Ω 1% DEVICE UNDER TEST 100-250 VAC 60 Hz I H LOAD IH 120-145 CONDUCTION ANGLE IH IH S1 SCOPE SCOPE INDICATIONS ˚ LOAD CURRENT Figure 9.1 Ω VBB1 =10 V - TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS NOTE A: Input pulse width is increased until ICM = 0. NOTE B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected.15 Basic Sidac Circuit (a) Circuit VBO R SIDAC VDC(IN) ≥ VB0 VC t RL IL VC (b) Waveforms C IL Rmax ≤ Rmin ≥ VIN .