DISCRETE SEMICONDUCTORS

DATA SHEET
k, halfpage

M3D119

BYD33 series Fast soft-recovery controlled avalanche rectifiers

Product specication Supersedes data of 1996 Jun 05 1996 Sep 18

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack.
handbook, 4 columns

BYD33 series
and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.

DESCRIPTION Cavity free cylindrical glass package through Implotec(1) technology. This package is hermetically sealed

a
MAM123

Fig.1 Simplified outline (SOD81) and symbol.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD33D BYD33G BYD33J BYD33K BYD33M BYD33U BYD33V VR continuous reverse voltage BYD33D BYD33G BYD33J BYD33K BYD33M BYD33U BYD33V IF(AV) average forward current BYD33D to M BYD33U and V IF(AV) average forward current BYD33D to M BYD33U and V IFRM repetitive peak forward current BYD33D to M BYD33U and V Ttp = 55 C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 65 C; PCB mounting (see Fig.19); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 Ttp = 55 C; see Figs 6 and 7 12 11 A A 200 400 600 800 1000 1200 1400 1.30 1.26 V V V V V V V A A PARAMETER repetitive peak reverse voltage 200 400 600 800 1000 1200 1400 V V V V V V V CONDITIONS MIN. MAX. UNIT

0.70 0.67

A A

1996 Sep 18

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

SYMBOL IFRM PARAMETER repetitive peak forward current BYD33D to M BYD33U and V IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off 65 see Figs 12 and 13 65 CONDITIONS Tamb = 65 C; see Figs 8 and 9

BYD33 series

MIN.

MAX. 7 6 20 A A A

UNIT

ERSM

non-repetitive peak reverse avalanche energy BYD33D to J BYD33K to V

10 7 +175 +175

mJ mJ C C

Tstg Tj

storage temperature junction temperature

ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specied. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 1 A; Tj = Tj max; see Figs 14 and 15 IF = 1 A; see Figs 14 and 15 V(BR)R reverse avalanche breakdown voltage BYD33D BYD33G BYD33J BYD33K BYD33M BYD33U BYD33V IR reverse current VR = VRRMmax; see Fig.16 VR = VRRMmax; Tj = 165 C; see Fig.16 trr reverse recovery time BYD33D to J BYD33K and M BYD33U and V Cd diode capacitance f = 1 MHz; VR = 0 V; see Figs 17 and 18 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A see Fig.21 IR = 0.1 mA 300 500 700 900 1100 1300 1500 1 100 V V V V V V V A A MIN. TYP. MAX. 1.1 1.3 V V UNIT

20

250 300 500

ns ns ns pF

1996 Sep 18

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

SYMBOL dI R -------dt PARAMETER maximum slope of reverse recovery current BYD33D to J BYD33K to V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm CONDITIONS when switched from IF = 1 A to VR 30 V and dIF/dt = 1 A/s; see Fig.20 MIN.

BYD33 series

TYP.

MAX.

UNIT

6 5

A/s A/s

VALUE 60 120

UNIT K/W K/W

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.19. For more information please refer to the General Part of associated Handbook.

1996 Sep 18

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

GRAPHICAL DATA
MGA857

BYD33 series

handbook, halfpage

1.6

handbook, halfpage

1.6

MLB905

I F(AV) (A) 1.2 lead length 10 mm

I F(AV) (A) 1.2 lead length 10 mm

0.8

0.8

0.4

0.4

0 0 BYD33D to M a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. 100 T tp ( oC) 200

0 0 BYD33U and V a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. 100 T tp ( oC) 200

Fig.2

Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).

Fig.3

Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).

handbook, halfpage

1.2

MLB902

handbook, halfpage

1.2

MLB906

I F(AV) (A) 0.8

I F(AV) (A) 0.8

0.4

0.4

100

Tamb ( o C)

200

100

Tamb ( o C)

200

BYD33D to M a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.19. Switched mode application.

BYD33U and V a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.19. Switched mode application.

Fig.4

Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).

Fig.5

Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).

1996 Sep 18

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

BYD33 series

MGA859

handbook, full pagewidth

12

I FRM (A) 10 = 0.05

8 0.1

6 0.2 4 0.5 2 1 0 10 2

10 1

10

10 2

10 3

t p (ms)

10 4

BYD33D to M Ttp = 55 C; Rth j-tp = 60 K/W. VRRMmax during 1 ; curves include derating for Tj max at VRRM = 1000 V.

Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

MLB909

handbook, full pagewidth

12

I FRM (A) 10 = 0.05

8 0.1 6 0.2 4 0.5 2 1 0 10 2

10 1

10

10 2

10 3

t p (ms)

10 4

BYD33U and V Ttp = 55C; Rth j-tp = 60 K/W. VRRMmax during 1 ; curves include derating for Tj max at VRRM = 1400 V.

Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1996 Sep 18

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

BYD33 series

MGA860

handbook, full pagewidth

I FRM (A)

= 0.05

0.1

0.2 2 0.5

1 0 10 2 10 1 1 10 10 2 10 3 10 4

t p (ms)

BYD33D to M Tamb = 65 C; Rth j-a = 120 K/W. VRRMmax during 1 ; curves include derating for Tj max at VRRM = 1000 V.

Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

MLB910

handbook, full pagewidth

I FRM (A)

6 = 0.05

0.1

0.2 2 0.5 1 0 10 2 10 1 1 10 10 2 10 3 10 4

t p (ms)

BYD33U and V Tamb = 65 C; Rth j-a = 120 K/W. VRRMmax during 1 ; curves include derating for Tj max at VRRM = 1400 V.

Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1996 Sep 18

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

BYD33 series

handbook, halfpage

2.4

MGA869

handbook, halfpage

2.4

MLB904

P (W) 1.6

a=3

2.5 2 1.57 1.42

P (W) 1.6

a = 3 2.5 2 1.57 1.42

0.8

0.8

0.8 I F(AV) (A)

1.6

0.8 I F(AV) (A)

1.6

BYD33D to M a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.

BYD33U and V a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.

Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.

Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.

handbook, halfpage

200

MGA861

handbook, halfpage

200

MLB907

Tj ( oC)

Tj ( oC)

100

100

400

800

VR (V)

1200

1000

VR (V)

2000

BYD33D to M Solid line = VR. Dotted line = VRRM; = 0.5.

BYD33U and V Solid line = VR. Dotted line = VRRM; = 0.5.

Fig.12 Maximum permissible junction temperature as a function of reverse voltage.

Fig.13 Maximum permissible junction temperature as a function of reverse voltage.

1996 Sep 18

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

BYD33 series

handbook, halfpage

MGC522

handbook, halfpage

MGC523

IF (A) 6

IF (A) 6

0 0 1 2 V F (V) 3

V F (V)

BYD33D to M Solid line: Tj = 25 C. Dotted line: Tj = 175 C.

BYD33U and V Solid line: Tj = 25 C. Dotted line: Tj = 175 C.

Fig.14 Forward current as a function of forward voltage; maximum values.

Fig.15 Forward current as a function of forward voltage; maximum values.

3 10 handbook, halfpage

MGA853

102 handbook, halfpage

MGA862

IR (A) 102

Cd (pF)

10 D, G, J 10 K, M

1 0 100 T j ( o C) 200

1 1 10

102

V R (V)

103

VR = VRRMmax.

BYD33D to M f = 1 MHz; Tj = 25 C.

Fig.16 Reverse current as a function of junction temperature; maximum values.

Fig.17 Diode capacitance as a function of reverse voltage; typical values.

1996 Sep 18

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

BYD33 series

102 handbook, halfpage

MLB908

handbook, halfpage

50 25

Cd (pF) 7 50 10

2 3 1 1 10 102 V R (V) 103

MGA200

BYD33U and V f = 1 MHz; Tj = 25 C. Dimensions in mm.

Fig.18 Diode capacitance as a function of reverse voltage; typical values.

Fig.19 Device mounted on a printed-circuit board.

IF halfpage ndbook, dI F dt t rr 10% t dI R dt 100% IR

MGC499

Fig.20 Reverse recovery definitions.

1996 Sep 18

10

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

BYD33 series

handbook, full pagewidth

DUT +

IF (A) 0.5 1 t rr

10

25 V 50 0 0.25 0.5 IR (A) 1.0

MAM057

Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns.

Fig.21 Test circuit and reverse recovery time waveform and definition.

1996 Sep 18

11

Philips Semiconductors

Product specication

Fast soft-recovery controlled avalanche rectiers

PACKAGE OUTLINE

BYD33 series

handbook, full pagewidth

5 max 0.81 max 2.15 max

MBC051

28 min

3.8 max

28 min

Dimensions in mm. The marking band indicates the cathode.

Fig.22 SOD81.

DEFINITIONS Data Sheet Status Objective specication Preliminary specication Product specication Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.

1996 Sep 18

12

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