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UNISONIC TECHNOLOGIES CO.

, LTD S8050
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
„ DESCRIPTION
1

NPN SILICON TRANSISTOR

The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.

„

FEATURES
TO-92

* Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to S8550 Lead-free: S8050L Halogen-free: S8050G

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ORDERING INFORMATION
Normal S8050-xx-T92-B S8050-xx-T92-K Order Number Lead Free Plating S8050L-xx-T92-B S8050L-xx-T92-K Halogen Free S8050G-xx-T92-B S8050G-xx-T92-K Package TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk

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QW-R201-013.B

Ic=500mA Collector-Emitter Saturation Voltage VCE(SAT) Ic=500mA. IB=50mA Base-Emitter Saturation Voltage VBE(SAT) Ic=500mA.unisonic. IB=50mA Base-Emitter Saturation Voltage VBE VCE=1V.5 1. Ic=10mA Current Gain Bandwidth Product fT VCE=10V.S8050 „ NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C. f=1MHz „ 1 100 100 120 40 110 400 0. Ic=0 hFE1 VCE=1V. IE=0.com. IE=0 Collector-Emitter Breakdown Voltage BVCEO Ic=1mA. Absolute maximum ratings are stress ratings only and functional device operation is not implied.tw 2 of 4 QW-R201-013.2 1. IB=0 Emitter-Base Breakdown Voltage BVEBO IE=100μA. „ ELECTRICAL CHARACTERISTICS (Ta=25°C. LTD www.B . Ic=50mA Output Capacitance Cob VCB=10V.. Ic=0 Collector Cut-Off Current ICBO VCB=30V. unless otherwise specified) MIN 30 20 5 TYP MAX UNIT V V V μA nA PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO Ic=100μA.0 V V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE C 120-200 D 160-300 E 280-400 UNISONIC TECHNOLOGIES CO.0 100 9. unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current Ic 700 mA Collector Dissipation(Ta=25°C) Pc 1 W Junction Temperature TJ 150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Ic=1mA DC Current Gain hFE2 VCE=1V. IE=0 Emitter Cut-Off Current IEBO VEB=5V. Ic=150 mA hFE3 VCE=1V.

Ic (mA) Collector Output Capacitance 103 Capacitance.2 0.com.2 1..5mA IB=1.0 Base-Emitter Voltage. Ic (mA) 0.0mA IB=2.8 1.3 0. VBE (V) Current Gain-Bandwidth Product Current Gain-Bandwidth Product. Ic (mA) 100 0 10 101 102 103 Collector-Base Voltage (V) UNISONIC TECHNOLOGIES CO.S8050 „ TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR 0. Cob (pF) 103 VCE=10V 102 10 2 f=1MHz IE=0 101 101 100 0 10 101 102 103 Collector Current. VCE ( V) Base-Emitter on Voltage 100 -1 10 100 101 102 103 Collector Current.0mA IB=0.4 0. fT (MHz) Collector Current.6 0.1 0 Static Characteristics IB=3.5mA DC current Gain.0mA IB=1. Ic (mA) 2 10 Saturation Voltage (mV) VCE=1V 4 Ic=10*IB VBE(SAT) 101 103 100 102 VCE(SAT) 101 -1 10 100 101 102 103 10-1 0 0. hFE 103 DC Current Gain VCE=1V 102 101 0 0.4 0.5 Collector Current. Ic (mA) Saturation Voltage 10 Collector Current.6 2.unisonic.8 1.B .4 0.tw 3 of 4 QW-R201-013.5mA IB=2.2 0.0 Collector-Emitter Voltage. LTD www.

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UNISONIC TECHNOLOGIES CO. LTD www. even momentarily. devices or systems where malfunction of these products can be reasonably expected to result in personal injury. is believed to be accurate and reliable and may be changed without notice. operating condition ranges..tw 4 of 4 QW-R201-013.S8050 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed. or other parameters) listed in products specifications of any and all UTC products described or contained herein. rated values (such as maximum ratings.com. The information presented in this document does not form part of any quotation or contract.B . UTC products are not designed for use in life support appliances.unisonic.