2SK3476

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK3476
VHF- and UHF-band Amplifier Applications
Unit: mm Output power: PO = 7.0 W (min) Gain: GP = 11.4dB (min) Drain efficiency: ηD = 60% (min)

· · ·

Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 20 ±5 3 20 150 −45~150 Unit V V A W °C °C

Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB) JEDEC ― ― 2-5N1A

Marking
2 Type name

JEITA TOSHIBA

1

UC

F **

3

Dot

Lo No. 1. Gate 2. Source (heat sink) 3. Drain

Caution
Please take care to avoid generating static electricity when handling this transistor.

1

2002-01-09

2 V.2 V. f = 520 MHz.5 kW C1: 15 pF C2: 11 pF C3: 9 pF C4: 30 pF C5: 30 pF C6: 11 pF C7: 8 pF C8: 9 pF C9: 2200 pF C10: 2200 pF C11: 2200 pF C12: 10000 pF C13: 10 mF C14: 10000 pF C15: 10 mF 2 2002-01-09 . Iidle = 500 mA (VGS = adjust). ID = 75 mA VDS = 7.2 V.05 18 1 53 49 ¾ ¾ ¾ ¾ Max 5 5 1. Iidle = 500 mA (VGS = adjust). f = 1 MHz VDS = 7. Iidle = 500 mA. ID = 2 mA VGS = 10 V. ¾ ¾ 1. f = 520 MHz. VDS = 10 V. 5.2 V. VGS = adjust. VGS = 0 V.0 V. Pi = 500 mW.2 W R2: 1. PO = 7 W. f = 1 MHz VDS = 7. VDS = 7.6 mm enamel wire.6 mm enamel wire.2SK3476 Electrical Characteristics (Ta = 25°C) Characteristics Drain cut-off current Gate-source leakage current Threshold voltage Drain-source on-voltage Forward transconductance Input capacitance Output capacitance Output power Drain efficiency Power gain Low voltage output power Symbol IDSS IGSS Vth VDS (ON) Yfs Ciss Coss PO hD GP POL Test Condition VDS = 20 V.4 5 Typ. VSWR LOAD 20:1 all phase Min ¾ ¾ 0.55 ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ Unit mA mA V mV S pF pF W % dB W Load mismatch ¾ No degradation Note 1: These characteristic values are measured using measurement tools specified by Toshiba. Pi = 500 mW) C11 C9 Pi ZG = 50 W C1 C2 C3 C12 L1 C13 C14 L2 C6 C15 C7 C8 C4 R1 C5 C10 PO ZL = 50 W R2 VGS VDS L1: f0. Pi = adjust. VGS = 0 V.2 V. Output Power Test Fixture (Test Condition: f = 520 MHz. f = 520 MHz.8ID. 5. IDS = 1 A VDS = 7. 4T L2: f0.2 V. 8T R1: 2.55 ¾ ¾ ¾ ¾ 7 60 11. VDS = 6. VGS = 0 V VGS = 10 V VDS = 7.8ID. Pi = 500 mW.

6 V (W) 8 Iidle = 300 mA 6 PO Output power Output power PO 10 7.0 V 5 800 1000 0 0 500 mA 4 2 0 0 200 400 600 (W) 15 200 400 600 800 1000 Input power Pi (mW) Input power Pi (mW) hD – Pi 100 f = 520 MHz VDS = 7.0 V 60 7.2 V 40 9.2SK3476 PO – Pi 12 f = 520 MHz 10 VDS = 7.2 V VDS = 6.2 V Tc = 25°C 700 mA 60 500 mA Iidle = 300 mA 40 100 f = 520 MHz Iidle = 500 mA Tc = 25°C VDS = 6. 3 2002-01-09 .2 V Tc = 25°C 700 mA 20 f = 520 MHz Iidle = 500 mA Tc = 25°C PO – Pi 9.2 V Iidle = 500 mA hD – Pi (W) Drain efficiency DD 8 (%) -20°C PO 60°C 6 Tc = 100°C 25°C 60 -20°C 60°C Output power 40 Tc = 100°C 25°C 4 2 20 0 0 200 400 600 800 1000 0 0 200 400 600 800 1000 Input power Pi (mW) Input power Pi (mW) Note 2: These are only typical curves and devices are not necessarily guaranteed at these curves.2 V Iidle = 500 mA 80 100 f = 520 MHz VDS = 7.6 V hD – Pi (%) Drain efficiency DD 20 Drain efficiency DD 600 800 1000 (%) 80 80 20 0 0 200 400 0 0 200 400 600 800 1000 Input power Pi (mW) Input power Pi (mW) PO – Pi 12 f = 520 MHz 10 VDS = 7.

. traffic signal instruments. These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”).). industrial robotics. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. etc. when utilizing TOSHIBA products. airplane or spaceship instruments. personal equipment. Unintended Usage include atomic energy control instruments. all types of safety devices. measuring equipment. · The information contained herein is presented only as a guide for the applications of our products. semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.2SK3476 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer. etc. 4 2002-01-09 . Also. please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. · The information contained herein is subject to change without notice. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. transportation instruments. In developing your designs. and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. bodily injury or damage to property. to comply with the standards of safety in making a safe design for the entire system. It is the responsibility of the buyer. office equipment. please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices. Nevertheless.” or “TOSHIBA Semiconductor Reliability Handbook” etc. domestic appliances. medical instruments.. combustion control instruments.

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