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N Channel MOSFET BSIM3 model

NDrain NGate NGate NDrain NGate NDrain NGate NDrain

mosnbsim3

NSource
(a)

NBulk

NSource
(b)

NBulk

NSource
(c)

NBulk

NSource
(d)

NBulk

Figure 1: N Channel MOSFET BSIM3 model

Form: mosnbsim3: instance name n1 n2 n3 n4 n1 is the drain node, n2 is the gate node, n3 is the source node, n4 is the bulk node.

parameter list

Model Parameters: Parameter l w tox toxm cdsc cdscb cdscd cit nfactor xj vsat at a0 ags a1 a2 keta nsub nch ngate vbm xt1 kt1 kt1l kt2 k3 k3b w0 nlx dvt0 dvt1 dvt2 dvt0w dvt1 dvt2w drout dsub Description Length of the device Width of the device Gate oxide thickness Gate oxide thickness used in extraction Drain/Source and channel coupling capacitance Body-bias dependence of cdsc Drain-bias dependence of cdsc Interface state capacitance Subthreshold swing coecient Junction depth Saturation velocity at tnom Temperature coecient of Vsat Non-uniform depletion width eect coecient Gate bias coecient of Abulk Non-saturation eect coecient Non-saturation eect coecient Boy-bias coecient of non-uniform depletion width eect Substrate doping concentration Channel doping concentration Poly-gate doping concentration Maximum body voltage Doping depth Temperature coecient of Vth Temperature coecient of Vth Body coecient of kt1 Narrow width eect coecient Body eect coecient of k3 Narrow width eect parameter Lateral non-uniform doping eect Short channel eect coecient 0 Short channel eect coecient 1 Short channel eect coecient 2 Narrow width eect coecient 0 Narrow width eect coecient 1 Narrow width eect coecient 2 DIBL coecient of output resistance DIBL coecient in the sub-threshold region Default 1.0e-6 1.0e-6 150.0e-10 tox 2.4e-4 0.0 0.0 0.0 1.0 0.15e-6 8.0e4 3.3e4 1.0 0.0 0.0 1.0 -0.047 6.0e16 1.7e17 0.0 -3.0 1.55e-7 -0.11 1.0 0.022 80.0 0.0 2.5e-6 1.74e-7 2.2 0.53 -0.032 0.0 5.3e6 -0.032 0.56 0.56 Units m m m m F/m2 F/m2 F/m2 F/m2 m m/s m/s V 1 V 1 V 1 v 1 cm3 cm3 cm3 V m V Vm V 1 m m -

Table 1: MOS Model Parameter table 1

Parameter ua ub uc u0 voff tnom elm delta rdsw prwg prwb prt eta0 etab pclm pdibl1 pdibl2 pdiblb pscbe1 pscbe2 pvag vfb acde moin noff voffcv lint ll llc lln lw lwc lwn lwl lwlc

Description Linear gate dependence of mobility Quadratic gate dependence of mobility Body-bias dependence of mobility Low-eld mobility at tnom Threshold voltage oset Parameter measurement temperature Non-quasi-static Elmore constant parameter Eective Vds parameter Source-drain resistance per width Gate-bias eect on parasitic resistance Body-eect on parasitic resistance Temperature coecient of parasitic resistance Subthreshold region DIBL coecient Subthreshold region DIBL coecient Channel length modulation coecent Drain-induced barrier lowering coecient Drain-induced barrier lowering coecient Body-eect on drain induced barrier lowering Substrate current body-eect coecient Substrate current body-eect coecent Gate dependence of output resistance parameter Flat band voltage Exponential coecient for nite charge thickness Coecient for gate-bias dependent surface potential C-V turn-on/o parameter C-V lateral shift parameter Length reduction parameter Length reduction parameter Length reduction parameter for C-V Length reduction parameter Length reduction parameter Length reduction parameter for C-V Length reduction parameter Length reduction parameter Length reduction parameter for C-V

Default 2.25e-9 5.87e-19 -4.65e-11 0.067 -0.08 300.0 5.0 0.01 0.0 0.0 0.0 0.0 0.08 -0.07 1.3 0.39 0.0086 0.0 4.24e8 1.0e-5 0.0 -1.0 1.0 15.0 1.0 0.0 0.0 0.0 ll 1.0 0.0 lw 1.0 0.0 lwl

Units m/V m2 /V 2 m/V m2 /V s V o K V V 1 V 0.5 V 1 V 1 V /m m/V V m/V V m m m m m m m m m

Table 2: MOS Model Parameter table 2

Parameter wr wint dwg dwb wl wlc wln ww wwc wwn wwl wwlc b0 b1 clc cle alpha0 alpha1 beta0 ute k1 k2 temp ua1 ub1 uc1

Description Width dependence of rds Width reduction parameter Width reduction parameter Width reduction parameter Width reduction parameter Width reduction parameter for C-V Width reduction parameter Width reduction parameter Width reduction parameter for C-V Width reduction parameter Width reduction parameter Width reduction parameter for C-V Abulk narrow width parameter Abulk narrow width parameter Vdsat parameter for C-V model Vdsat parameter for C-V model Substrate current model parameter Substrate current model parameter Diode limiting current Temperature coecient of mobility First order body-eect coecient Second order body-eect coecient Circuit temperature Temperature coecient for ua Temperature coecient for ub Temperature coecient for uc

Default 1.0 0.0 0.0 0.0 0.0 wl 1.0 0.0 ww 1.0 0.0 wwl 0.0 0.0 0.1e-6 0.6 0.0 0.0 30.0 -1.5 0.53 -0.0186 300.0 4.31e-9 -7.61e-18 -5.6e-11

Units m m m m m m m m m m m m m m m Am/V A/V V o K m/V (m/V )2 m/V

Table 3: MOS Model Parameter table 3

Notes: There is no equivalent SPICE element. Version: 2002.12.31 Credits: Name Ramya Mohan ramya@ieee.org Aliation NC State University Date December 2002 Links www.ncsu.edu