You are on page 1of 4

# (rlrtalDg

wlllv

Jrrrl

r\\rtr

rrv'

rrrurrwrefvrJ/rt

ivt" Semester [B.Tech.] ETEC-203 PaperCode: Time:I YzHrs.

FIRST-TERM E XAI\{INATION SePt.r2007 Sub: Analog Electronics-- I Max. Marks: 30

more. I r, n n .. and any two more' Note: Attempt Q.No.l ancl ( o, * fl.! r&lA* 0_o-.,,, n 0 density,electric field intensity, potentialin the e 1 (;) Draw and explain the variationof charge p-n junction (Na - No) biasedwith a voltage,Vo. depletionregionof a srepgraded '-i of a p-n junction diode. characteristic
diod :. , . ^+. I Dittetut'h'att A t t) '') b/ zLn't ' T a, -a(

o,F:,1", 1,rfl,

11n'LS-t''osov t n-#'4

(2 X 5 : 10)

5K4-

u.
ftf,, 3.
2At>

in

RL = 2 KQ' Use \tAa:10V, vi :0.2 sin 100nt, Q 2 (a) In the circuit shown i n F i g . l , g i v e n : Vf : 0'6V and R1 : lg9 for the large sig.ialmodel of the diode. Find the total voltage (5) the load,RL. across (2) (b) Explain the termsIceo, Icpo. Shich is greater? (c)UFor the zener regulator shown in Fig.2, calculate the maximum and minimum zener (3) ,u/ dtodecurrent. Qw er, : Vz r \$ o V '

- l2oV ,80

?.1

|'4.

idealdiodes,find the values of labeledrzoltages shownin Fig.3, assuming Q.3 (a) For the circ';rit (5) and currents. : 100, Assume Fr (b) For the circuit shown in Fig.4, find the region of operation. (s) : : 0.2V. VcE,sat 0.8V, VBE,a"tine:0'7V, Vgg.sat 5V

lov
loto

[1*

qt
ft0.3

to z-

ww

in CB & CE configuration& indicate of an npn transistor e 4 (;) Draw the outputcharacteristics is more. (5) Explain why the slopeof CE characteristics the variousregionsof operation. Assumepp: 100, of the transistor. (tr)For the cirguit sirown,find the regionof operatic'n (5) VCE,5.,:0.2V. VBE,ru,:0.8V, VBE.active:0.7V, lov

w. gg sip
5-0r.4
Dr

V

Vrc

I-o F

rL

(E',v)

-lov

FiA.t

3r+

fo

lar"/,.

lrlgasg

\\tltg

yL,ur

r\r'rr

I rv'

^rrr'r

EXAMINATION SECOND-TERM
[B.Tech'] IIIRD Semester Paper Code:ETEC-207 Time: I VzHrs. Note: AttemptQ.No.l and any two more' Not'., 2001 -Sub: Analog Electronics I Mar. Marks:30

(2)
Q.1(a)Explainthea.c.andd.c.loadlinesofaCEamplifier. Au andR"' of cE, cc and cB amplifiersin ternrsof Ai, Ri, ) comparethe performance values' Give aPProximate :1-h"l ( c ) S h o w t h a t h r c :- ( 1 + h r c ) ;h l . : h i . ; h . . tb': h''

(3) (3)

(4) is an improvement over fixed bias in terms of S(Ico)' arrangement bias L''rcl\) srrq self lrL'w Dvrr (a) Expilainhow e.2 rcV

,fd

4

: : h'" : 2X l}-a amplifier is sho*n in Fig.2. Given: hi. 1'1 KO; hf" l0; e.3 (a) A transistor A1 : IJI.I Avs: VoA/ri Ri & R:' A/V. Determine: and ho.:25X 10-6 of (i) cE amplifier with RE, (ii) Darlington parr (b) Draw and discuss important features emitter follower for fp and at high frequency.Derive an expression Q.4 (a) Draw the hybrid nmodel find its reldtionship to parameterfr' gain Au, and Ro for the two stageamplifiershown in Fig'3' ( (b) Find the voltage
V I

w. gg sip
5ot rt-

u.

thatVce : 6.5V. desired (i) Rs, (ii) S(Ico). Determine

transistorwithF:120isused.

.ho*l in Fig.l, a silicon thecircuit eor Itis

Rg
#g+

vir

in

/ t/

1

fo
I'5 nn

response' frequency (d)_Draw the circuit of an Rc coupledamplifier & show its v Explainwhy the gain falls at low andhigh frequency.

(2)

ho,, I z ,6 Vo

(6)

(6)

(4) (4)

(6)

ww
5l{L

V..

p.vo

Yo
5 t<rr

(

lrta

Ro'

trr2. e I Q.3<sI

Ffr 3 t0..,{t]

(Ptease write Your Exam Roll No')

ilo' A-t 'l'ts'6"f o 6 EramRoll

ExenalNATloN END'TERM DrcsrutunR-2001
THtnoSeiunsrnnB.TecH.

PaperCode:ETEC-207 PaperlD: 28207

Maximum Marks 75 (5) (5) ( 5) (5) ( 5)

Q1

(a (b )/ (c) (d)/ (e)

breakdown and comparethem' Define zenerbreakdown and avalanche for in a p-n junction diode- Derive an expression narrier potential Explain the formaiion of contactPotential. Wntiit'early effect?Explainbase width modulation' identifyA and B' toporigi"f i"i"".h of the four topologies feed back ampgtier List the fou.r a JFET' O"tiuu the relationbetweenVos and Vo of U N IT.I

ar/
Q.2
(a)

(b)

in u.
wl!
,{g
Qo + tLv
loo -lL

l5l<*

fo
f

A b r i d g e r e c t i f i e r u s e s R l = 2 ' 4 k f ' ' e a c h d i o d e i sappried. i d e a l i zcalculate e d t o h a v(a) e Rpeak t=5Q an d R 'rms =cr'Vr=0' and dc ot.?0v is vortagehavinguno A sinusoidar power (e) input (d) ac power output "r.pr'tuoe (c)'irc vottages (7) varuesof roadcurrent(b) dc "nd rms'output regulition' Derivenecessaryequation' and (0 percentage efficiency11 rectifications the that assuming fig'1, in shown for the circuit obtain the voltage transfer characlerist'[s = (5'5) =O'OV O' Vi(t)= V sinrot Rr and V, have and diodesare identical

r-rock)
Fi4-t

n g-'(gJ

5 k-''-

Q.3

(a) (b)

2 anlopflg|a?^'':s:::||},*?#lLf[T;,Hi:1":Yf"n"o si bar Ann-type verocitv 1s (b)drift and rever (a)dopins n"wsFind 8'MA ;:ffi: ii,; #;;;r
il#;:ffi
raccinnc fnr (

tsll&"rTlr:'\$il'iilH;i;;,'iriir.
capacitance.

Q4

(a)

-2MA' Neglectreven\$e shown in fig' 2, for lr = (4) lf cr = 0.98, Ver = 0.7V, find Rr in the circuit current. saturation

w. gg sip

'',0.u,

ror dirrusions an expressions Derive or a diode, (8)

..3,3 fcn-

ww

14 a0*"r^

(b) (c)

(a (b

and explain' (3) for transistor Drawthe Ebers-Moll for a transistor. equation write the Ebers-Moll dividerbias voltage a in improved is how stability Definettrreedifferentsiauiiitvfactors.Explain (s.5) circuit. OR (5) for input impedance' derivethe equatiotr pair and Darlington of Draw the circuit (7.5) Derivethe necessaryequations' DetermineAV and R, of tne cilruit uno*n in Fig.3.

Fis-e

r r:(}

+5v
l-2F^

Rc
alo

le=lf s
9oo"--r* VA =4

n}s
Fi q.3

Q.5

(a)

in fig.4' lco: 2mA F = 125' shown AVsandAV of the circuit AVz, A,Vr, Determine

( 8)

{A" Us

*w-

u.

in
(4.5) t (3) (e.6)

" 1 * 4 n e g a t i v e f'!'.= e9d!a9kamp|ifierandjustifyyouranswer. mri-,Xitar:+ns+ Oeternrine 6q.F]Tf;ll, (b)

w. gg sip
F!s.6 I

and explain' Draw the frequencyresponseof an RC coupledarnplifier OR

fo
vcc
Vcc a

\$

1f-o
I \'/

e.5

(a)
(b)

ww

model for a common Drain FET and derive the equationfor voltage Sketch the small signal v
gain.

(6)

are pt= 30, rd 5Ka. FinOtne voltagegain of the circuitshown in fig. B. FET parameters

,F..^

(6.5)

vpn
5of<-n- I lof.n-

(a) (b) (c)

(4) of UJT. theworking of UJT.Explain giving structure basic the diagram Draw source For trigger 150. of line_slo.pe hasa straight characteristics Fora SCR,tne ga[e-caihode of 0.5W, computethe gate source gate powerdissipation voltageof 20V and allowable v (5'5) resistance ************

oR of SCR' Draw and explainV-l characteristics

I

t

,"z''

J