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ivt" Semester [B.Tech.] ETEC-203 PaperCode: Time:I YzHrs.

FIRST-TERM E XAI\{INATION SePt.r2007 Sub: Analog Electronics-- I Max. Marks: 30

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EXAMINATION SECOND-TERM
[B.Tech'] IIIRD Semester Paper Code:ETEC-207 Time: I VzHrs. Note: AttemptQ.No.l and any two more' Not'., 2001 -Sub: Analog Electronics I Mar. Marks:30

(2)
Q.1(a)Explainthea.c.andd.c.loadlinesofaCEamplifier. Au andR"' of cE, cc and cB amplifiersin ternrsof Ai, Ri, ) comparethe performance values' Give aPProximate :1-h"l ( c ) S h o w t h a t h r c :- ( 1 + h r c ) ;h l . : h i . ; h . . tb': h''

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(4) is an improvement over fixed bias in terms of S(Ico)' arrangement bias L''rcl\) srrq self lrL'w Dvrr (a) Expilainhow e.2 rcV

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: : h'" : 2X l}-a amplifier is sho*n in Fig.2. Given: hi. 1'1 KO; hf" l0; e.3 (a) A transistor A1 : IJI.I Avs: VoA/ri Ri & R:' A/V. Determine: and ho.:25X 10-6 of (i) cE amplifier with RE, (ii) Darlington parr (b) Draw and discuss important features emitter follower for fp and at high frequency.Derive an expression Q.4 (a) Draw the hybrid nmodel find its reldtionship to parameterfr' gain Au, and Ro for the two stageamplifiershown in Fig'3' ( (b) Find the voltage
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response' frequency (d)_Draw the circuit of an Rc coupledamplifier & show its v Explainwhy the gain falls at low andhigh frequency.

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ExenalNATloN END'TERM DrcsrutunR-2001
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PaperCode:ETEC-207 PaperlD: 28207

Maximum Marks 75 (5) (5) ( 5) (5) ( 5)

Q1

(a (b )/ (c) (d)/ (e)

breakdown and comparethem' Define zenerbreakdown and avalanche for in a p-n junction diode- Derive an expression narrier potential Explain the formaiion of contactPotential. Wntiit'early effect?Explainbase width modulation' identifyA and B' toporigi"f i"i"".h of the four topologies feed back ampgtier List the fou.r a JFET' O"tiuu the relationbetweenVos and Vo of U N IT.I

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are pt= 30, rd 5Ka. FinOtne voltagegain of the circuitshown in fig. B. FET parameters

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