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Advanced Power MOSFET

FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.)
1 2 3

IRF640A
BVDSS = 200 V RDS(on) = 0.18 ID = 18 A
TO-220

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings


Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
1 O
o

Value 200 18 11.4 72 + _ 30 216 18 13.9 5.0 139 1.11 - 55 to +150

Units V A A V mJ A mJ V/ns W W/ C
o

O 1 O 1 O 3 O
2

300

Thermal Resistance
Symbol RJC R CS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 0.9 -62.5
o

Units C/W

Rev. B

1999 Fairchild Semiconductor Corporation

IRF640A
Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(Miller) Charge Min. Typ. Max. Units 200 -2.0 -----------------0.26 ------9.61 210 94 17 16 48 24 44 10.4 27.1 --4.0 100 -100 10 100 0.18 -250 110 40 40 110 60 58 --nC ns A pF V V nA

N-CHANNEL POWER MOSFET

Electrical Characteristics (TC=25oC unless otherwise specified)


Test Condition VGS=0V,ID=250A See Fig 7 VDS=5V,ID=250A VGS=30V VGS=-30V VDS=200V VDS=160V,TC=125 C VGS=10V,ID=9A VDS=40V,ID=9A
4 O 4 O
o

o V/ C ID=250 A

1160 1500

VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=18A, RG=9.1 See Fig 13 VDS=160V,VGS=10V, ID=18A See Fig 6 & Fig 12
4 O 5 O 4 O 5 O

Source-Drain Diode Ratings and Characteristics


Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O

Min. Typ. Max. Units --------195 1.35 18 72 1.5 --A V ns C

Test Condition Integral reverse pn-diode in the MOSFET TJ=25oC,IS=18A,VGS=0V TJ=25oC ,IF=18A diF/dt=100A/ s
4 O

O
4

Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=1mH, I AS=18A, V DD=50V, R G=27 , Starting T J =25 C O 3 ISD < _ 260A/ s, V DD < _ 18A, di/dt < _BVDSS , Starting T J =25oC O _2% Pulse Test : Pulse Width = 250 4 s, Duty Cycle < O Essentially Independent of Operating Temperature 5 O

N-CHANNEL POWER MOSFET


Fig 1. Output Characteristics
VGS

IRF640A
Fig 2. Transfer Characteristics
[A] ID , Drain Current
101

ID , Drain Current

[A]

Top :

101

15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V

150 oC 100 25 oC @ Notes : =0V 1. V GS 2. V = 40 V DS - 55 oC 3. 250 s Pulse Test 6 8 10

100

10-1

@ Notes : 1. 250 s Pulse Test 2. T = 25 oC C 100 101

10-1

10-1

VDS , Drain-Source Voltage [V] [A]

VGS , Gate-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current


RDS(on) , [ ] Drain-Source On-Resistance
0 . 4

Fig 4. Source-Drain Diode Forward Voltage

0 . 3

VGS = 10 V

IDR , Reverse Drain Current

1 01

0 . 2

1 00 @N o t e s: 1 . VGS = 0 V 2 5 oC 1 0-1 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 2 .2 5 0 s P u l s eT e s t 1 . 4 1 . 6 1 . 8 2 . 0

0 . 1

VGS = 20 V

@N o t e : TJ = 2 5 oC 0 . 0 0 20 40 60 8 0

1 5 0 oC

ID , Drain Current [A]

VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage


2 0 0 0 Ciss= Cgs+ C h o r t e d) gd ( C ds= s Coss= Cds+ C gd

Fig 6. Gate Charge vs. Gate-Source Voltage


[V]
VDS = 4 0V 0 0V VDS = 1 VDS = 1 6 0V

[pF]

1 5 0 0

C iss

1 0 0 0 C oss 5 0 0 @N o t e s: 1 . VGS = 0 V 2 .f=1M H z C rss

VGS , Gate-Source Voltage

Crss= Cgd

1 0

Capacitance

@N o t e s : ID = 1 8 . 0A 0 0 1 0 2 0 3 0 4 0 5 0

00 10

1 10

VDS , Drain-Source Voltage [V]

QG , Total Gate Charge [nC]

IRF640A
BVDSS , (Normalized) Drain-Source Breakdown Voltage

N-CHANNEL POWER MOSFET


Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized) Drain-Source On-Resistance
3.0

Fig 7. Breakdown Voltage vs. Temperature


1.2

2.5

1.1

2.0

1.0

1.5

1.0 @ Notes : 1. V = 10 V GS 2. I = 9.0 A D

0.9

@ Notes : =0V 1. V GS = 250 A 2. I D

0.5

0.8 -75

-50

-25

25

50

75

100

125

150

175

0.0 -75

-50

-25

25

50

75

100

125

150

175

TJ , Junction Temperature [ oC]

TJ , Junction Temperature [ oC]

Fig 9. Max. Safe Operating Area


[A]
Operation in This Area is Limited by R DS(on) 100 s 1 ms
1 10

Fig 10. Max. Drain Current vs. Case Temperature


20

ID , Drain Current

ID , Drain Current

2 10

[A]
15 10 ms 10 5 102 0 25

DC

0 10

@ Notes : 1. T = 25 oC C 2. T = 150 oC J 3. Single Pulse

10-1 0 10

1 10

50

75

100

125

150

VDS , Drain-Source Voltage [V]

Tc , Case Temperature [ oC]

Fig 11. Thermal Response


Thermal Response
100 D=0.5

0.2 10
-1

0.1 0.05 0.02 0.01 single pulse

@ Notes : 1. Z J C (t)=0.9

C/W Max. (t)

/t2 2. Duty Factor, D=t 1 3. TJ M -TC =PD M *Z


JC

Z JC(t) ,

PDM t1 t2
10- 4 10- 3 10- 2 10- 1 100 101

10- 2 10- 5

t 1 , Square Wave Pulse Duration

[sec]

IRF640A
N-CHANNEL POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform

Current Regulator
50K 12V 200nF 300nF

Same Type as DUT

VGS Qg
10V

VDS VGS DUT


3mA

Qgs

Qgd

R1
Current Sampling (IG) Resistor

R2
Current Sampling (ID) Resistor

Charge

Fig 13. Resistive Switching Test Circuit & Waveforms

RL Vout Vin RG DUT 10V Vin


10%

Vout VDD
( 0.5 rated VDS )

90%

td(on) t on

tr

td(off) t off

tf

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

LL VDS
Vary tp to obtain required peak ID

BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp

ID

RG DUT 10V
tp

ID (t) VDS (t) Time

IRF640A

N-CHANNEL POWER MOSFET


Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS --

IS L Driver RG VGS
Same Type as DUT

VGS

VDD

dv/dt controlled by RG IS controlled by Duty Factor D

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

IS ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

Vf

VDD

Body Diode Forward Voltage Drop

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First Production

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Full Production

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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.