go athena #TITLE: Poly Buffered LOCOS Example # line x loc=-1.5 spac=0.1 line x loc=-0.4 spac=0.02 line x loc=0.

0 spac=0.02 line x loc=0.7 spac=0.2 # line y loc=0 line y loc=0.2 spac=0.08 line y loc=1 initialize orient=100 oxide ori.dep=f # # Pad oxide and nitride mask deposit oxide thick=0.02 div=1 deposit poly thick=0.1 div=4 deposit nitride thick=0.15 div=3 etch nitride left p1.x=-0.4 # tonyplot # # Field oxidation method fermi compress diffuse time=120 temp=1000 weto2 # structure outfile=anoxex05.str # tonyplot anoxex05.str quit ================================================================================ ===

go athena # Active Area Isolation Structure Punchthrough Extraction Test grid.model template=LOCOS method adapt # #line #line #line #line # #line #line #line x x x x loc=0 spac=0.1 tag=left loc=0.5 spac=0.04 loc=0.7 spac=0.04 loc=1.5 spac=0.1 tag=right

y loc=0.00 spac=0.01 tag=top y loc=0.2 spac=0.01 y loc=0.35 spac=0.04

rate=-4.phos=1e12 space.3 tag=bottom # init orientation=100 c.5 spac=0.02 dry # .000 dryo2 press=0.m=1 width.01 divi=1 deposit nitride thick=0.01 divi=1 # etch barrier left p1.35 etch oxide thick=.5 # #Fieldox method grid.str=1. deposit oxide thick=0.02 # #P-well Implant # implant boron dose=1e12 energy=100 pears # diffus temp=950 time=100 weto2 hcl=3 # #N-well implant not shown # # welldrive starts here diffus time=50 temp=1000 t..min=1 #relax y.rate=4.07 adapt.par accur.#line y loc=0.02 etch silicon dry thick=0.04 #line y loc=3 spac=0.15 # #Field Implant adapt.mult=0.444 nitro press=1 # etch oxide all # #Create Active.00 hcl=3 # etch oxide thick=0.ox=0.pc=3 etch nitride all # etch oxide thick=0.min=1.mult=0.x=0.3 divi=1 deposit barrier thick=.0100 diffuse temp=950 time=180 weto2 hcl.par accur.5 depth.10 hcl=3 # diffus time=220 temp=1200 nitro press=1 # diffus time=90 temp=1200 t.str=3 #pwell formation including masking off of the nwell # diffus time=30 temp=1000 dryo2 press=1.5 etch nitride thick=.2 implant boron dose=1e12 energy=50 # strip #relax y.

7 structure mirror left # Name the electrodes.. extract name="gate ox" thickness oxide mat..2 electrode name=substrate backside struct outf=amex03.0 # # Make the metal contacts to be used as electrodes in Atlas.par accur.2 electrode name=drain x=1.2011 SILVACO.89e12 and P oisson's ratio 0.02 # #gate oxide grown here:diffus time=11 temp=925 dryo2 press=1. #vt adjust implant adapt.120 divisions=8 # etch oxide dry thick=0.str -set amex03.mult=1 diffuse time=30 temp=900 nitro press=1....#sacrificial "cleaning" oxide diffus time=20 temp=1000 dryo2 press=1 hcl=3 # etch oxide dry thick=0. etch oxide right p1.mult=1 implant boron dose=1e12 energy=25 pearson # #LDD Spacer formation depo oxide thick=0..140 # implant arsenic dose=5.00 hcl=3 # # Extract the gate oxide thickness.par accur.x=0.x=1 deposit alumin thick=0.0e15 energy=50 pearson # method fermi compress adapt..str tonyplot amex03...occno=1 # Implant the VT adjust.03 divi=2 etch alumin left p1. Inc.3 ..set Copyright © 1984 . electrode name=source x=-1. ===================================================================== go athena #TITLE: LOCOS Shape Tuning in the COMPRESS Oxidation Model # Default elastic constants corresponding to default Young Modulus 3.

str method fermi compress grid.257e-12 s12.elast=-0.m=1 deposit oxide thick=.05 line y loc=0 spacing = 0.str #plot the resulting structure tonyplot -st ancaex04_*. Inc. structure outfile=ancaex04.1 init silicon space.0 spacing=.elast) for nitride material nitride s11.4 spacing = 0.15 div=5 etch nitride right p1.668e-1 line x loc = 0.077e-14 s44. .257e-14 s12.elast=-0.0 spacing=.05 line x loc = 2.elast=0.set quit Copyright © 1984 .str init infile=ancaex04.04 line y loc=0.668e-1 4 diffuse time=30 temp=1100 wet structure outfile=ancaex04_1.01 div=1 deposit nitride thick=0.elast= 0.x=1.ox=0.material 2 nitride s11.elast= 0.077e-12 s44.2011 SILVACO.05 diffuse time=30 temp=1100 wet structure outfile=ancaex04_0.str -set ancaex04.elast=0.str method fermi compress # Increase the Youngs modulus (reverse proportional to s11.

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