DOC/LP/01/28.02.

02 LP – EC2403 LESSON PLAN Sub Code & Name: EC2403 RF AND MICROWAVE ENGG Unit : I Semester :VII UNIT I Syllabus: Branch : EC LP Rev. No: 01 Date: 06/07/12 Page 01 of 06

TWO PORT RF NETWORKS-CIRCUIT REPRESENTATION

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Low frequency parameters-impedance, admittance, hybrid and ABCD, High frequency parameters-Formulation of S parameters, properties of S parameters-Reciprocal and lossless networks, transmission matrix, Introduction to component basics, wire, resistor, capacitor and inductor, applications of RF Objective: To study the two port RF Networks, its parameters & Circuit representation.

Session Topics to be covered No. 1. Introduction: RF, frequency range, properties of RF, two port networks. 2. Low frequency parameters-impedance or Zparameters, admittance or Y- parameters. 3. Hybrid or h-parameters 4. Transmission or ABCD parameters 5. High frequency parameters, Formulation of S parameters. 6. Properties of S parameters 7. Reciprocal and lossless networks. 8. Transmission Matrix, Generalized Scattering parameters. 9. Introduction to component basics, wire, resistor, capacitor and inductor, 10. Applications of RF 11. Tutorial

Time 50m 50m 50m 50m 50m 50m 50m 50m 50m 50m 50m

Ref 2,4 4 4 4 4,2 4,2 4,2 4,2 4,2 4,2

Teaching Method BB BB BB BB BB BB BB BB BB BB BB

4 2. Quality factor T and Pi matching networks Microstrip line matching networks ( single stub & Double stub matching) Tutorial CAT I Time 50m 50m 50m 50m 50m 50m 50m 50m 50m 50m 50m 75m Ref 2.02 LP – EC2403 LESSON PLAN Sub Code & Name: EC2403 RF AND MICROWAVE ENGG Unit : II Semester :VII Branch : EC LP Rev.4 2. frequency response. gain considerations noise figure. Stabilization Methods Gain considerations Noise Figure & Constant VSWR Impedance matching networks Forbidder regions.4 2. Session No.Stability circles Unconditional Stability. microstripline matching networks Objective: To study the RF transistor amplifier design and matching networks.DOC/LP/01/28. stability considerations.4 2. impedance matching networks. 12 13 14 15 16 17 18 19 20 21 22 Topics to be covered Introduction to RF Amplifiers. T and Π matching networks.4 2 2 2 2 Teaching Method BB BB BB BB BB BB BB BB BB BB BB . frequency response.4 2. Additional power relations Stability Considerations. No: 01 Date: 06/07/12 Page 02 of 06 UNIT II RF TRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORKS 9 Syllabus: Amplifier power relation. Transducer power gain.02.RF source. Characteristics Amplifier power relations.

3.02.S matrix formulation of two-port junction.Corners bends and twists . 26 S-matrix of E plane and H-plane TEE.3.Properties 27 S-matrix of Magic TEE.Corners.5 1.important microwave properties and applications.3 1.Phase changer 31 Cylindrical cavity resonators Time 50m 50m 50m 50m 50m 50m 50m 50m 50m Ref 1. significance of microwave frequency range . Attenuator . Microwave junctions -Tee junctions -Magic Tee .5 1. Scattering matrix -Concept of N port scattering matrix representation-Properties of S matrix.Bends and Twists.2 1.. Objective: To have an introduction about microwave communication and to study about various microwave waveguides and derive their S matrix.applications of microwaves. MICROWAVE PASSIVE COMPONENTS LP Rev.5 5 5 1 Teaching Method BB BB BB BB BB BB BB BB BB .02 LP – EC2403 LESSON PLAN Sub Code & Name: EC2403 RF AND MICROWAVE ENGG Unit : III Semester :VII UNIT III Syllabus: Microwave frequency range. No: 01 Date: 06/07/12 Page 03 of 06 Branch : EC 9 Session Topics to be covered No.Phase changer – S Matrix for microwave components – Cylindrical cavity resonators.S matrix formulation of two-port junction.Properties 28 Directional couplers -two hole directional couplers-S matrix and Properties 29 Ferrites .3.5 1.DOC/LP/01/28. 23 Microwave frequency range.Attenuator .Properties of Rat Race. significance of microwave frequency range applications of microwaves.important microwave properties and applications– Termination .Directional couplers -two hole directional couplers.3.Ferrites . 24 Scattering matrix -Concept of N port scattering matrix representation 25 Properties of S matrix. S-matrix of Isolator-Circulator 30 Termination – Gyrator.Rat race .GyratorIsolator-Circulator .

Parametric Amplifiers(Parametric up & down converter). IMPATT Diodes. Nonlinear Reactance(Small signal method) Cont.5 1.DOC/LP/01/28. Microwave monolithic integrated circuit (MMIC) – Introduction and Fabrication Techniques Time 50m 50m 50m 50m 50m 50m 50m 50m 50m 75m Ref 1.GaAs Diode.5 1. Physical Structures.5 Teaching Method BB BB BB BB BB BB BB BB BB CAT II .5 1. Ridely-Watkins-Hilsun (RWH) Theory.5 1. Session Topics to be covered No. Parametric devices -Principles of operation . Background.Varactor and Step recovery diodes – Transferred electron Devices -Gunn diode. Gunn Effect. Principles of Operation.Manley rowe power Relations.Materials and fabrication techniques MICROWAVE SEMICONDUCTOR DEVICES LP Rev.5 1.operation 32 33 34 35 36 37 38 39 40 Characteristics and applications of Microwave BJTs . Applications.5 1.applications of parametric amplifier .characteristics and application of BJTs and FETs -Principles of tunnel diodes .Varactor and Step recovery diodes.– Transferred electron Devices Gunn-Effect Diodes .amplifiers and fabrication techniques of microwave Integrated circuits.02.Microwave monolithic integrated circuit (MMIC) . No: 01 Date: 06/07/12 Page 04 of 06 9 Branch : EC Objective: To learn the various semiconductor devices. Power Output and Efficiency Parametric Devices.Microwave field effect transistors-Physical structure.02 LP – EC2403 LESSON PLAN Sub Code & Name: EC2403 RF AND MICROWAVE ENGG Unit : IV Semester :VII UNIT IV Syllabus: Microwave semiconductor devices. Microwave semiconductor devices. Physical Structures.5 1.Principles of operation Principles of tunnel diodes . Negative Resistance.5 1. Physical Structures.Avalanche Transit time devices. Power Output and Efficiency TRAPATT Diodes. Differential Negative Resistance Avalanche transit-time devices -Output Power and Quality Factor.operation . (Large signal method).IMPATT and TRAPATT devices.

Output Power and Beam Loading(Efficiency) Multi-cavity Klystron Amplifiers. wavelength. SWR. Power Output and Efficiency Electronic Admittance. Output Current Output Power of TwoCavity Klystron. Helix Traveling-Wave Tubes (TWTs). Reentrant Cavities. Wave Modes. Axial Electric Field. Velocity-Modulation Process.02 LP – EC2403 LESSON PLAN Sub Code & Name: EC2403 RF AND MICROWAVE ENGG Unit : V Semester :VII UNIT V MICROWAVE TUBES AND MEASUREMENTS LP Rev. Objective: To study the various microwave sources. Thermocouple sensor. Beam-Current Density.Power meter. Velocity Modulation. attenuation. their principle of operation and measurement of various parameters Session No.Output power and efficiency) Power measurement (Schottky Barrier Diode sensor. Magnetron Oscillators.Principle of operation of Multicavity Klystron.Bolometer sensor.Measurement of Q and Phase shift. Reactive discontinuity method. 41 42 43 44 45 46 47 48 49 50 Topics to be covered Klystrons. Amplification Process Convection Current. VSWR through return loss measurements Attenuation and Wavelength measurement.02. No: 01 Date: 06/07/12 Page 05 of 06 9 Branch : EC Syllabus: Microwave tubes. Microwave measurements:Measurement of power. Magnetron. Slow-Wave structures. CAT III Time 50m 50m 50m 50m 50m 50m 50m 50m 50m 50m 180m Ref 1 1 1 1 1 1 6 6 6 6 Teaching Method BB BB BB BB BB BB BB BB BB BB . Four-Cavity Klystron Reflex Klystrons. Bunching Process.Reflectometer method) Slotted line VSWR measurement. impedance. Reflex Klystron.High frequency limitations .DOC/LP/01/28. Cylindrical Magnetron(Angular frequency. Gain Consideration Microwave crossed-field tubes . Traveling Wave Tube. Q and Phase shift.Calorimetric method) Impedance measurement(Slotted line method.

Muthukumaran/ Mr.Ludwig and Pavel Bretshko ‘RF Circuit Design”. 2006. Pearson Education. REFERENCES 3.Saravanan Assistant Professors/ EC 06/07/2012 Approved by Dr. Robert .M.. No: 01 Date: 06/07/12 Page 06 of 06 Course Delivery Plan: 1 I Units 2 II I 1 II 3 I II 4 I II 5 I 2 CAT 1 1111111 TEXT BOOKS 1.Pozar: Microwave Engg.Prentice Hall of India.S Ganesh Vaidyanathan HOD/EC 06/07/2012 . 5. David M. Liao: Microwave Devices and Circuits . Annapurna Das and Sisir K. (2001) 4.Radmanesh.P.02 LP – EC2403 LESSON PLAN Sub Code & Name: EC2403 RF AND MICROWAVE ENGG Branch : EC Semester :VII LP Rev. Samuel Y. 2007.S.Mc Graw Hill. M.E. 2006.02. RF & Microwave Electronics Illustrated. Collin: Foundations for Microwave Engg. 2.2 nd Edition (2006) 6.John Wiley & Sons .Das: Microwave Engineering . Reinhold. Pearson Education. .DOC/LP/01/28.Tata McGraw-Hill (2004) II 6 I 7 II I II 3 8 I II 9 I II 4 CAT 2 1111111 10 I II 11 I II 12 I 5 CAT 3 1111111 II 13 I Week Prepared by Signature Name Designation Date Mr. Inc.

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