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# EC- Conventional Paper-I

IES-2010

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ELECTRONICS AND TELECOMMUNICATION ENGINEERING
PAPER-I (Conventional)

Time allotted : Three Hours

Maximum Marks : 200

Instructions
Candidates should attempt Question No. 1 which is compulsory and any FOUR from the remaining questions. The number of marks carried by each question is indicated at the end of the question. Answers must be written only in English. Assume suitable data, if necessary, and indicate the same clearly. Unless otherwise indicated, symbols and notations have their usual meanings. Values of the following constants may be used wherever necessary. Electronic charge = -1.6 x 10-19 coulomb. Free space permeability =
4π × 10−7

henry/m.

 -9 Free space permittivity =   36π  x 10 farad/m.   Velocity of light in free space = 3 x 108 m/sec. 1

Boltzmann constant = 1.38 x 10-23 joule/K. Planck constant = 6.626 x 10-34 joule-sec.

© All rights reserved by GATE Forum Educational Services Pvt. Ltd. No part of this booklet may be reproduced or utilized in any form without the written permission.

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Ltd. Explain the meaning of each parameter. indicating the position of donor and acceptor levels at 0 K. Show that the probability that a state ∆E above the Fermi level. EF is filled equals the probability that a state below EF by the same amount ∆E is empty Show that X * ( ω ) = X ( −ω) is the necessary and sufficient condition for x(t) to be real (c) (d) What is P-R function? Obtain a canonic realization of the driving-point admittance represented by the circuit of figure 1 and draw its pole-zero diagram 1F 1H Y (s) → 1Ω 1 F 5 4F 1 H 4 Figure 1 (e) (i) For a good conductor.com Sketch the covalent bonding of Si atoms in a intrinsic Si crystal Illustrate with sketches the formation of bonding in presence of donor and acceptor atoms. Determine the ski depth of copper at a frequency of 30 GHz (ii) (f) A d. 2 . Explain how the semiconductor behaves as n-type (in case of donor) and p-type (in case of acceptor) at a finite room temperature (T>0 K) (b) Write down the expression for Fermi-Dirac distribution function.c Wheatstone bridge shown below in figure 2 A R1 I1 I2 R2 + E − R3 B I3 D I4 R4 C Figure 2 © All rights reserved by GATE Forum Educational Services Pvt. (a) IES-2010 www. derive the expressions of attenuation constant.Conventional Paper-I 1. phase constant and the depth of penetration as functions of relevant parameters of the conductor The conductivity of copper is given as σ = 58 × 106 S / m .EC. Sketch the energy band diagram.gateforum. No part of this booklet may be reproduced or utilized in any form without the written permission.

Estimate the shift of Ei from the middle of the band gap Eg / 2 (b) (c) 3. h(n) Find the step response.gateforum.com for excitation and has R1 = 1. No part of this booklet may be reproduced or utilized in any form without the written permission. R 4 = 3. 3 .e.2 kΩ.Conventional Paper-I uses a 12V battery IES-2010 www. (a) ( ) at 300 K for InSb. (c) Obtain Ebers-Moll equations for a p-n-p bipolar junction transistor.. R 3 = 4kΩ. Show that these equations are true for any arbitrary geometry of the device A causal discrete time LTI system is described by 4. i. Obtain an expression for the intrinsic Fermi level (Ei) of a semiconductor with respect to the conduction band edge.5kΩ. from left-to-right. Calculate the meter current 2. the electric field is directed from left-toright ( → ) while the carrier concentrations decrease with increasing x. R2 = 1. Ltd. Also indicate the direction of flow of the corresponding current components. Sketch the energy-band diagram. How do the I-V characteristics of a practical diode vary from the ideal characteristics? Explain the breakdown mechanisms in p-n junction diode Explain with necessary energy-band diagrams the formation of Schottky contact and ohmic contact in the case of metal-semiconductor contacts. indicating the position of the intrinsic Fermi level with respect to the middle of the gap (b) Explain drift and diffusion mechanisms of current flow in a semiconductor In a region of a semiconductor. Indicate the directions of flux of charge carriers (electrons and holes) due to drift and diffusion.6 kΩ and R5 = 1kΩ . α > 0 © All rights reserved by GATE Forum Educational Services Pvt.014. Assume that the relevant ratio of electron to hole effective mass for InSb is 0. (a) Derive the current-voltage characteristics of a p-n junction under ideal condition.EC. s(n) Where x(n) and y(n) are the input and output of the system respectively (b) Compute the output y(t) for a continuous time LTI system whose impulse response h(t) and the input x(t) are given by h ( t ) = e−αtu ( t ) x ( t ) = e α tu ( − t ) . (a) y (n ) − 3 1 y ( n − 1) + y ( n − 2 ) = x ( n ) 4 8 (i) (ii) (iii) Determine the system function H(z) Find the impulse response.

(a) (i) Find v0 ( t ) for t > 0 in the circuit of figure 4.gateforum. 4 . f-cutset and f-circuit © All rights reserved by GATE Forum Educational Services Pvt. if switch is changed at t = 0 after having remained in the position shown for long time 2Ω t =0 + 12 V 1 F 400 Figure 4 1H + 10Ω − V0 ( t ) (ii) Consider the circuit of figure 5. Ltd. Find R. If Q = 7.Conventional Paper-I (c) IES-2010 www. Average power of output random process 1Ω x (t) 1Ω 1F y (t) Figure 3 5. No part of this booklet may be reproduced or utilized in any form without the written permission.com If the input to a low-pass filter as shown below in figure 3 is a random process x(t) with autocorrelation function. R x ( τ ) = 5δ ( t ) . the coil resistance. then find (i) (ii) Power spectral density of the output random process. and Rg for maximum power supply to the circuit Rg + L 100pF R Figure 5 1V 106 Hz (b) (i) Determine Thevenin equivalent circuit for the network of figure 6 as a function of α looking into terminals AB → ix 1Ω 1Ω A + 2Ω αix − B Figure 6 (ii) Define tree.EC. find the value of L needed for antiresonance.