IRE/IRD

A sensor is required to find out that case and to keep in form to the computer for further actions.We use INFRARED EMITTER and DETECTOR to over come the problem. In early days to find out human entry in unauthorized places achieved by using LDR'S and LIGHT OPERATED SYSTEM, which had a problem, that may work in sunlights and cross sectional luminaries and provides false information to monitoring station. To avoid this we are using invisible INFRARED RADIATIONSYSTEM, which is harmless. In basic I.R. rays has highest wave length than the existing VIBGYOR color spectrum. According to manufacturer's instruction we found that I.R. rays can be generated by applying electric current to GALLIUM ARSENIDE semiconductor material. Here we are using a current limiting resistor to safeguard I.R.EMITTER as well as to produce enough rays density, which is necessary to drive I.R. DETECTOR. We have used 1K resistor from 5V dc to the I.R. EMITTER to restrict current flow beyond 5mA. Even though I.R.EMITTER can withstand upto 35mA, we have used 5mA due to shortest distance. If the distance is more we have to increase the current flow to the emitter. Beyond the limitation of I.R. EMITTER can be achieved by using additional lenses (OPTICAL SYSTEM) in front of the emitter.I.R. DETECTOR I.R. DETECTOR is having reverse characteristics of the I.R. EMITTER. That is we cannot consume more current from it on account of positive sensitivity. For the above grounds we have used 100K from the supply Voltage. So the sink current will be as per the OHM's LAW I=V/R. So 5/100K will be less than a microamphere which may improve the detecting characteristics.I.R. DETECTOR will conduct as long as the rays falls on it. So the level will be low which may goes to CUT OFF RANGE, when ever there is no rays. Status will be high.From the above we are clearly known that if there is no entry signal will be low, if there is entry signal will be high. I.R. DETECTOR drives a NPN transistor which provides inverse output at collector end and given to a two stages SCHMITT TRIGGER. Which will give at ultimate inversion of the I.R. DETECTOR.(If there is no entry = high).

If there is any entry the signal output of SCHMITT TRIGGER will be low, which creates a false information to the computer. THEORY I.R. EMITTER Early emitters, both visible and infrared, suffered from low power output deterioration(degradation) when compared to present day devices. Emitter chip materials, commonly referred to as III-V compounds, are combinations of elements from the III and Vcolumns of the periodic chart. The P-N junction is formed by either diffusing or epitaxially growing the junction. Typical materials used for emitters include GALLIUM ARSENIDE and GALLIUM ALUMINUM ARSENIDE, among others. When a forward bias current flows through the emitter's P-N junction, photons are emitted. The total output power is a function of the forward current, and is measured in mW. Likewise, the axial radiant intensity of an emitting device, which is the portion of the total emitted power radiated within a specified cone angle directly on axis, is also a function of this forward current, and is measured in mW per steradian. Motorola's line of emitter's operate at wavelengths of either 660,850, or 940 nanometers. This encompasses the red and the near I.R. portions of the electromagnetic frequency specrum. Emitters of various wavelengths are produced for the purpose of optimizing system with a variety of applications and environments. The 940nm emitters are the most cost effective, however, their spectral emission is not ideally matched to that of the Silicon detectors. Most applications can tolerate certain justified by the devices lower price. Almost all optoisolators, for example, use the 940nm emitter. The 850nm emitters are not well matched to silicon, but are ideal for use in plastic fiber optic systems. Plastic fiber has a characteristic attenuation curve which reaches a minimum at 660nm. This attenuation is the predominant factor to consider when designing a plastic fiber system. The above emitters find wide usage in a variety of isolating, remote control and fiber optic applications. Newly developed materials and refinements in chip processing and handling have led to more efficient and more reliable emitters. New packaging techniques have made low cost plastic devices suitable for applications formerly requiting glass lensed units, by providing efficient modeled-in lenses. In this way, higher on-axis radiant intensities can be achieved, for a

given amount of total radiated power. A narrow radiation angle provides for a lower drive current when operating in a configuration where the opto detector is on-axis with the power into an optical fiber. When a very wide or off-axis viewing angle is required,such as in a remote control emitters are generally used.Motorola's selection of emitters includes the low-cost plastic Case 422A devices, such as MLED91, MLED96 and MLED97. Also in a plastic package is the remote control emitter, MLED81.Metal and glass packages, such as the TO18(MLED930)are utilized in applications where high axial intensity or absolute hermeticity are essential.

DETECTORS
As emitters have developed over the years, photodetectors have also advanced dramatically. Early photo transistors and photo diodes were soon joined by photodarlington detectors, and then by light-activated SCRs. Innovations in design have created devices having higher sensitivity, speed and voltage capabilities. Recent developments in detector technology have led to larger and more complex circuit integration. Photodetectors incorporating SCHMITT TRIGGER logic outputs are becoming increasingly popular in applications requiring very fast speed, hysteresis for noise immunity, and logic level outputs. Motorola introduced the world's first photo-triac driver, a planar silicon device capable of controlling loads on an ac power line. This was followed by the zero-crossing triac driver, also a Motorola development. This device stands as a classic circuitry, photo-optic technology, high voltage solid state physics and field effect transistor (FET) technology are all incorporated on a monolithic integrated circuit chip inside this device. Future trends point to even higher performance characteristics and more circuit integration in photodetectors.Detectors, are like emitters, are available in plastic and in lensed metal packages.