TC4421/TC4422

9A High-Speed MOSFET Drivers
Features
• High Peak Output Current: 9A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Continuous Output Current: 2A Max • Fast Rise and Fall Times: - 30 ns with 4,700 pF Load - 180 ns with 47,000 pF Load • Short Propagation Delays: 30 ns (typ) • Low Supply Current: - With Logic ‘1’ Input – 200 µA (typ) - With Logic ‘0’ Input – 55 µA (typ) • Low Output Impedance: 1.4Ω (typ) • Latch-Up Protected: Will Withstand 1.5A Output Reverse Current • Input Will Withstand Negative Inputs Up To 5V • Pin-Compatible with the TC4420/TC4429 6A MOSFET Driver • Space-saving 8-Pin 6x5 DFN Package

General Description
The TC4421/TC4422 are high-current buffer/drivers capable of driving large MOSFETs and IGBTs. These devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge. The TC4421/TC4422 inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. With both surface-mount and pin-through-hole packages and four operating temperature range offerings, the TC4421/22 family of 9A MOSFET drivers fit into most any application where high gate/line capacitance drive is required.

Applications
• • • • • Line Drivers for Extra Heavily-Loaded Lines Pulse Generators Driving the Largest MOSFETs and IGBTs Local Power ON/OFF Switch Motor and Solenoid Driver

Package Types(1)
8-Pin PDIP/ TC4421 TC4422 SOIC
VDD INPUT NC GND 1 8 VDD 2 TC4421 7 OUTPUT 3 TC4422 6 OUTPUT 4 5 GND VDD OUTPUT OUTPUT GND VDD 1 INPUT 2 NC 3 GND 4

8-Pin DFN(2)
8

TC4421 TC4422
VDD VDD

5-Pin TO-220
Tab is Common to VDD

TC4421 TC4422

7 6 5

OUTPUT OUTPUT OUTPUT OUTPUT GND GND

TC4421 TC4422

Note 1: Duplicate pins must both be connected for proper operation. 2: Exposed pad of the DFN package is electrically isolated.

 2004 Microchip Technology Inc.

INPUT GND VDD GND OUTPUT DS21420D-page 1

.TC4421/TC4422 Functional Block Diagram VDD TC4421 Inverting 200 µA 300 mV Output Input 4.7V TC4422 Non-Inverting GND Effective Input C = 25 pF DS21420D-page 2  2004 Microchip Technology Inc.

....2 55 — 1..........  2004 Microchip Technology Inc.................... High Input Voltage Logic ‘0’....025 — — — — 2 — — — 1...TC4421/TC4422 1...5V ≤ VDD ≤ 18V.............. High Output Resistance.000 pF Figure 4-1 Figure 4-1 VOH VOL ROH ROL IPK IDC IREV VDD – 0....7 — — — V V Ω Ω A A A DC TEST DC TEST IOUT = 10 mA. not production tested.......... Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.............4 — –10 1...................9 9..5W Thermal Impedances (To Case) 5-Pin TO-220 RθJ-C ....5 — 0... Low Input Voltage Input Current Output High Output Voltage Low Output Voltage Output Resistance.. TA = +25°C (TC4421/TC4422 CAT only) (Note 3) Duty cycle ≤ 2%...........................5 150 18 mA µA V VIN = 3V VIN = 0V tR tF tD1 tD2 — — — — 60 60 30 33 75 75 60 60 ns ns ns ns Figure 4-1............. (VDD + 0.......6W DFN .......... CL = 10.....8 +10 V V µA 0V ≤ VIN ≤ VDD Sym Min Typ Max Units Conditions Switching times ensured by design....0 — >1.............. 50 mA Package Power Dissipation (TA ≤ 70°C) 5-Pin TO-220 ..... Parameters Input Logic ‘1’....... Absolute Maximum Ratings† Supply Voltage ...0 ELECTRICAL CHARACTERISTICS † Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device... Note 2 PDIP .....................................4 0..................000 pF Figure 4-1. 12..... DS21420D-page 3 .......3V) to (GND – 5V) Input Current (VIN > VDD)............ +20V Input Voltage .. 1.......5 0......................8 1..... VDD = 18V IOUT = 10 mA............ 750 mW Package Power Dissipation (TA ≤ 25°C) 5-Pin TO-220 (With Heatsink) .............. CL = 10........ VDD = 18V VDD = 18V 10V ≤ VDD ≤ 18V........... t ≤ 300 µsec VIH VIL IIN 2........ Low Peak Output Current Continuous Output Current Latch-Up Protection Withstand Reverse Current Switching Time (Note 1) Rise Time Fall Time Delay Time Delay Time Power Supply Power Supply Current Operating Input Voltage Note 1: 2: 3: IS VDD — — 4. 730 mW SOIC..... 10°C/W DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted..3 — — 0............... TA = +25°C with 4.. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied.... Package power dissipation is dependent on the copper pad area on the PCB.............025 — 1............ Tested during characterization........

5L-TO-220 Thermal Resistance. VDD = 18V VIH VIL IIN 2. .000 pF Figure 4-1 Figure 4-1 VOH VOL ROH ROL VDD – 0. 8L-SOIC θJA θJA θJA θJA — — — — 71 33.4 — –10 — — — — 0. Low Switching Time (Note 1) Rise Time Fall Time Delay Time Delay Time Power Supply Power Supply Current Operating Input Voltage Note 1: IS VDD — — 4.8 — 0. CL = 10.5V ≤ VDD ≤ 18V. 8L-6x5 DFN Thermal Resistance.025 — — — — — 2.7 V V Ω Ω DC TEST DC TEST IOUT = 10 mA. 8L-PDIP Thermal Resistance.5V ≤ VDD ≤ 18V.6 2. VDD = 18V IOUT = 10 mA. Parameters Input Logic ‘1’.5 — — — 3 0. Low Input Voltage Input Current Output High Output Voltage Low Output Voltage Output Resistance.025 3.8 +10 V V µA 0V ≤ VIN ≤ VDD Sym Min Typ Max Units Conditions Switching times ensured by design.2 18 mA V VIN = 3V VIN = 0V tR tF tD1 tD2 — — — — 60 60 50 65 120 120 80 80 ns ns ns ns Figure 4-1. over operating temperature range with 4. High Output Resistance. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted. Parameters Temperature Ranges Specified Temperature Range (C) Specified Temperature Range (E) Specified Temperature Range (V) Maximum Junction Temperature Storage Temperature Range Package Thermal Resistances Thermal Resistance.TC4421/TC4422 DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise noted.4 1. all parameters apply with 4. CL = 10.2 125 120 — — — — °C/W °C/W °C/W °C/W Typical 4-layer board with vias to ground plane TA TA TA TJ TA 0 –40 –40 — –65 — — — — — +70 +85 +125 +150 +150 °C °C °C °C °C Sym Min Typ Max Units Conditions DS21420D-page 4  2004 Microchip Technology Inc.000 pF Figure 4-1. High Input Voltage Logic ‘0’.

000 1000 10.000 pF 120 100 80 60 4700 pF 40 20 1000 pF 10. TA = +25°C with 4. 300 Rise Time vs.  2004 Microchip Technology Inc. the data presented may be outside the specified operating range (e.000 pF tFALL (nsec) 180 160 140 22.TC4421/TC4422 2. outside specified power supply range) and therefore outside the warranted range.000 pF tRISE (nsec) 140 120 100 80 60 40 20 0 4 10.000 pF 4700 pF 1000 pF 6 8 10 12 VDD (V) 14 16 18 0 4 6 8 10 12 VDD (V) 14 16 18 FIGURE 2-1: Voltage. Supply 5V 250 10V 200 150 15V 100 50 0 100 250 10V 200 150 5V tFALL (nsec) tRISE (nsec) 15V 100 50 0 100 1000 10. Note: Unless otherwise indicated. DS21420D-page 5 .000 pF VDD = 15V CLOAD = 1000 pF 45 Time (nsec) Time (nsec) 40 tRISE 50 40 30 35 tD1 tD2 tFALL 30 -40 0 40 TA (°C) 80 120 25 4 6 8 10 12 14 16 18 VDD (V) FIGURE 2-3: Temperature.000 FIGURE 2-2: Load. In some graphs or tables. 90 80 70 60 Rise Time vs. 220 200 180 160 22. FIGURE 2-6: Supply Voltage.g. 300 Fall Time vs. Capacitive FIGURE 2-5: Load.5V ≤ VDD ≤ 18V. Propagation Delay vs..0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only.000 CLOAD (pF) 100.000 CLOAD (pF) 100. Capacitive CLOAD = 10. The performance characteristics listed herein are not tested or guaranteed. 50 Fall Time vs. Rise and Fall Times vs. Supply FIGURE 2-4: Voltage.

000 100 Frequency (kHz) 1000 FIGURE 2-9: Supply Current vs.000 pF 22. .000 FIGURE 2-8: Supply Current vs.2 kHz ISUPPLY (mA) 120 100 80 60 40 20 0 10 470 pF 100 Frequency (kHz) 1000 4700 pF 0.000 pF 100 80 60 40 20 0 2 MHz 63.000 pF 20 470 pF 0 10 100. FIGURE 2-12: Supply Current vs. Frequency (VDD = 6V).000 pF 10.1 µF 20 kHz ISUPPLY (mA) 60 50 40 30 20 10 0 100 1000 10. 100 90 80 70 VDD = 6V FIGURE 2-11: Supply Current vs. Frequency (VDD = 12V).000 pF 22.000 CLOAD (pF) 100.5V ≤ VDD ≤ 18V.000 CLOAD (pF) 100. Frequency (VDD = 18V).125 MHz 632 kHz 200 kHz ISUPPLY (mA) 120 120 100 80 60 40 0.1 µF FIGURE 2-7: Supply Current vs. 180 160 140 VDD = 12V VDD = 12V 22.1 µF 4700 pF 20 kHz 20 0 470 pF 10 100 Frequency (kHz) 1000 100 1000 10. 180 160 140 ISUPPLY (mA) FIGURE 2-10: Supply Current vs.TC4421/TC4422 Note: Unless otherwise indicated.000 pF 100 80 4700 pF 60 40 0.125 MHz 63.000 pF 2 MHz 10.2 kHz 1. Capacitive Load (VDD = 12V). Capactive Load (VDD = 6V).000 CLOAD (pF) 2 MHz 632 kHz 63. Capacitive Load (VDD = 18V).000 pF 47.000 pF 140 120 100 80 60 40 20 0 100 1000 10. DS21420D-page 6  2004 Microchip Technology Inc. TA = +25°C with 4.2 kHz ISUPPLY (mA) 10. 120 VDD = 6V 200 kHz 47. 220 200 180 160 ISUPPLY (mA) 180 VDD = 18V 160 140 VDD = 18V 47.000 632 kHz 200 kHz 20 kHz 1.

103 Propagation Delay vs. DS21420D-page 7 .5 5 TJ = 150°C 4. TA = +25°C with 4.  2004 Microchip Technology Inc.TC4421/TC4422 Note: Unless otherwise indicated. For the loss in a single transition.5 5 4. Supply Voltage.5 2 1.5 4 6 8 10 12 VDD (V) 14 16 18 TJ = 25°C TJ = 150°C FIGURE 2-15: High-State Output Resistance vs.5 RDS(ON) (Ω) 4 3. 10-6 Propagation Delay vs. Quiescent Supply Current FIGURE 2-14: Supply Voltage. TJ (°C) FIGURE 2-17: vs.5 4 6 8 10 12 VDD (V) 14 16 18 TJ = 25°C 4 3. Temperature.5 1 0.5 2 1.5V ≤ VDD ≤ 18V. FIGURE 2-18: Low-State Output Resistance vs.000 pF VIN = 5V 70 60 50 40 30 20 10 0 1 2 3 4 5 6 7 8 Input Amplitude (V) 9 10 tD1 tD2 Time (nsec) 80 tD2 30 25 20 –60 –40 –20 tD1 0 20 40 TA (°C) 60 80 100 120 FIGURE 2-13: Amplitude. VDD = 18V 10-7 IQUIESCENT (µA) A•sec Input = 1 102 Input = 0 10-8 4 6 8 10 12 VDD (V) 14 16 18 -60 -40 -20 0 20 40 60 80 100 120 NOTE: The values on this graph represent the loss seen by the driver during a complete cycle. 6 5.5 1 0. 120 110 100 90 Time (nsec) 50 VDD = 10V CLOAD = 10.5 RDS(ON) (Ω) Crossover Energy vs. divide the stated value by 2.5 3 2. Supply Voltage. Input FIGURE 2-16: Temperature.000 pF 45 40 35 VDD = 18V CLOAD = 10.5 3 2. 6 5.

8-Pin DFN Pin No. DS21420D-page 8  2004 Microchip Technology Inc. . A minimum value of 1. The input also has 300 mV of hysteresis between the high and low thresholds that prevents output glitching even when the rise and fall time of the input signal is very slow.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1.TC4421/TC4422 3. The MOSFET driver output is capable of withstanding 1. TTL/CMOS compatible input No connection Ground Ground CMOS push-pull output CMOS push-pull output Supply input. SOIC PIN FUNCTION TABLE Pin No. this pad can be connected to a ground plane or other copper plane on a printed circuit board to aid in heat removal from the package.3 CMOS Push-Pull Output The VDD input is the bias supply for the MOSFET driver and is rated for 4.0A peak currents.5V to 18V Exposed metal pad Metal tab is at the VDD potential 3. The MOSFET driver output is a low-impedance. 8-Pin PDIP.5A peak reverse currents of either polarity. 5-Pin TO-220 Symbol Description 1 2 3 4 5 6 7 8 — — 1 2 3 4 5 6 7 8 PAD — — 1 — 2 4 5 — 3 — TAB VDD INPUT NC GND GND OUTPUT OUTPUT VDD NC VDD Supply input. 4.0 µF is suggested.5V to 18V Control input.2 Control Input The MOSFET driver input is a high-impedance.5V to 18V with respect to the ground pin.1 Supply Input (VDD) 3. CMOS. push-pull style output capable of driving a capacitive load with 9. 3. 3.4 3. 4. The value of the capacitor should be chosen based on the capacitive load that is being driven. Ground The ground pins are the return path for the bias current and for the high peak currents that discharge the load capacitor. TTL/CMOS compatible input. The VDD input should be bypassed to ground with a local ceramic capacitor.5 Exposed Metal Pad The exposed metal pad of the 6x5 DFN package is not internally connected to any potential. TABLE 3-1: Pin No. Therefore. The ground pins should be tied into a ground plane or have very short traces to the bias supply source return.

1 µF Output 0V +18V Output 0V 10% 10% 10% tD1 tF 90% tD2 tR 90% 90% Inverting Driver TC4421 Note: Pinout shown is for the DFN.  2004 Microchip Technology Inc.TC4421/TC4422 4. PDIP and SOIC packages.7 µF 1 0.0 APPLICATIONS INFORMATION +5V Input VDD = 18V 4. tRISE = tFALL ≤ 10 nsec Output 0V 10% 10% tD1 90% tR tD2 90% tF 10% +5V Input 90% 8 0.1 µF Input 2 6 7 CL = 10. DS21420D-page 9 . square wave.000 pF 4 5 0V +18V Input: 100 kHz. Non-Inverting Driver TC4422 FIGURE 4-1: Switching Time Test Circuits.

week code.X YY WW NNN Customer specific information* Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Note: In the event the full Microchip part number cannot be marked on one line.. and traceability code.TC4421/TC4422 5.1 PACKAGING INFORMATION Package Marking Information 5-Lead TO-220 Example: XXXXXXXXX XXXXXXXXX YYWWNNN TC4421CAT XXXXXXXXX 0420256 8-Lead DFN Example: XXXXXXX XXXXXXX XXYYWW NNN TC4421 EMF 0420 256 8-Lead PDIP (300 mil) XXXXXXXX XXXXXNNN YYWW Example: TC4421 CPA256 0420 8-Lead SOIC (208 mil) Example: XXXXXXXX XXXXXXXX YYWWNNN GTC4421 ESM 0420256 Legend: XX.0 5. . it will be carried over to the next line thus limiting the number of available characters for customer specific information.. DS21420D-page 10  2004 Microchip Technology Inc. year code. * Standard OTP marking consists of Microchip part number.

014 .14 1.52 1.72 14.190 .115 .92 0.36 0.040 3° 7° MILLIMETERS MIN MAX 1.56 0.022 .025 .93 0.045 .96 13.94 6.273 .83 9. JEDEC equivalent: TO-220 Drawing No. Mold flash or protrusions shall not exceed .29 2.06 4.590 . DS21420D-page 11 .030 .99 5. C04-036  2004 Microchip Technology Inc.560 .234 .62 2.78 10.040 .22 14.055 .263 .060 .TC4421/TC4422 5-Lead Plastic Transistor Outline (AT) (TO-220) L H1 Q b e3 e e1 E EJECTOR PIN ØP a (5X) C1 J1 A F D Lead Pitch Overall Lead Centers Space Between Leads Overall Height Overall Width Overall Length Flag Length Flag Thickness Through Hole Center Through Hole Diameter Lead Length Base to Bottom of Lead Lead Thickness Lead Width Mold Draft Angle Units Dimension Limits e e1 e3 A E D H1 F Q P L J1 C1 b a INCHES* MAX MIN .415 .68 6.385 .103 .010" (0.072 .540 .54 14.22 2.83 6.090 .71 3.76 1.258 .64 1.02 4.146 .55 1.254mm) per side.560 .87 3.02 3° 7° *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions.156 .113 .40 2.160 .

.TC4421/TC4422 8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated DS21420D-page 12  2004 Microchip Technology Inc.

54 3.94 2.46 3.385 .40 5 10 5 10 MAX 4.014 .070 .68 8.14 1.310 5 5 .313 .145 .125 .022 .30 0.012 .18 3. Mold flash or protrusions shall not exceed .015 .010” (0.130 .92 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions.38 7.058 .87 9.015 . C04-018  2004 Microchip Technology Inc.20 0.254mm) per side.56 3.140 .100 .35 9.TC4421/TC4422 8-Lead Plastic Dual In-line (P) – 300 mil (PDIP) E1 D 2 n 1 α E A A2 c L A1 β eB B1 p B Number of Pins Pitch Top to Seating Plane Molded Package Thickness Base to Seating Plane Shoulder to Shoulder Width Molded Package Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic Units Dimension Limits n p A A2 A1 E E1 D L c B1 B eB α β MIN INCHES* NOM 8 .56 10.78 3.373 .240 .250 .32 3.300 . DS21420D-page 13 .30 0.370 10 10 MAX MIN § .10 6.130 .26 6.29 1.38 1.78 0.60 9.92 3.155 .46 7.260 . JEDEC Equivalent: MS-001 Drawing No.43 0.008 .170 .36 0.94 6.360 .430 15 15 MILLIMETERS NOM 8 2.135 .46 0.045 .62 7.115 .018 .325 .14 9.

38 5. Mold flash or protrusions shall not exceed .13 5.202 .76 8 0.43 0 12 0 12 MAX 2.069 Standoff A1 .014 .208 .62 7.070 Molded Package Thickness A2 . Formerly called SOIC) E E1 p D 2 n B 1 α c A A2 φ β L A1 Number of Pins Pitch Overall Height A .300 .TC4421/TC4422 8-Lead Plastic Small Outline (SM) – Medium.51 15 15 DS21420D-page 14  2004 Microchip Technology Inc.05 0.75 1.010" (0.20 0.002 .212 Overall Length D .21 0.325 Molded Package Width E1 . C04-056 Units Dimension Limits n p MIN INCHES* NOM 8 .78 1.64 0 4 0.020 .03 1.97 1.25 0.010 Overall Width E . 208 mil Body (SOIJ) (JEITA/EIAJ Standard.009 .205 .017 12 12 MAX MIN MILLIMETERS NOM 8 1.050 .078 .95 5.11 5.51 0.210 Foot Length L .025 4 .28 5.080 . Drawing No.26 5.201 .010 Lead Width B .23 0.020 α Mold Draft Angle Top 0 15 β Mold Draft Angle Bottom 0 15 *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions.98 0.074 .88 0.008 .030 φ Foot Angle 0 8 c Lead Thickness .25 8.33 0.13 7.36 0.27 1.254mm) per side.075 .313 . .005 .

revision of silicon and Data Sheet (include Literature #) you are using.TC4421/TC4422 PRODUCT IDENTIFICATION SYSTEM To order or obtain information. -40°C to +85°C. 9A High-Speed Non-Inverting MOSFET Driver. 9A High-Speed Non-Inverting MOSFET Driver. 8-lead (Tape and Reel) a) TC4422VPA: b) TC4422EPA: PB Free G = Lead-Free device = Blank * Available on selected packages. 0°C to +70°C. 8-lead SM713 = Plastic SOIC (208 mil Body). e. PART NO. -40°C to +85°C. 2. Flat. PDIP package.microchip. Inverting 9A High-Speed MOSFET Driver. PB Free SOIC package. DS21420D-page 15 . Your local Microchip sales office The Microchip Corporate Literature Center U.. Customer Notification System Register on our web site (www. refer to the factory or the listed sales office.microchip. 3. Flat. -40°C to +85°C. To determine if an errata sheet exists for a particular device.com) Please specify which device. -40°C to +125°C. FAX: (480) 792-7277 The Microchip Worldwide Site (www. 5-lead (C-Temp Only) MF = Dual. PDIP package.g. Device: TC4421: TC4422: 9A High-Speed MOSFET Driver. DFN package. Device X Temperature Range XX Package XXX Tape & Reel X PB Free Examples: a) TC4421CAT: 9A High-Speed Inverting MOSFET Driver. No-Lead (6x5 mm Body). TO-220 package. 9A High-Speed Inverting MOSFET Driver.S. Non-Inverting b) TC4421ESMG: 9A High-Speed Inverting MOSFET Driver. on pricing or delivery. No-Lead (6x5 mm Body).  2004 Microchip Technology Inc.com/cn) to receive the most current information on our products. 8-lead MF713 = Dual. Temperature Range: C E V = 0°C to +70°C (PDIP and TO-220 Only) = -40°C to +85°C = -40°C to +125°C c) Package: AT = TO-220. 8-lead (Tape and Reel) PA = Plastic DIP (300 mil Body). -40°C to +125°C. TC4421VMF: 9A High-Speed Inverting MOSFET Driver. 8-lead SM = Plastic SOIC (208 mil Body). DFN package. please contact one of the following: 1. Contact your local sales representative for availability c) TC4422EMF: Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds.

.TC4421/TC4422 NOTES: DS21420D-page 16  2004 Microchip Technology Inc.

In-Circuit Serial Programming. In addition.A. MPSIM. MPLAB. microperipherals. to our knowledge. the Microchip logo.S. dsPICworks. Serial EEPROMs. microID. and other countries. or infringement of patents or other intellectual property rights arising from such use or otherwise. implicitly or otherwise. We at Microchip are committed to continuously improving the code protection features of our products. dsPIC.” • • • Code protection is constantly evolving. when used in the intended manner and under normal conditions. PICmicro. © 2004.A. Migratable Memory. PICSTART. require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. FlexROM. ICEPIC. MPLIB. MPASM. MXDEV. ECONOMONITOR. PICLAB. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. rfPIC. KEELOQ® code hopping devices. PowerMate. PICMASTER. and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U. All of these methods. Printed in the U. Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.A. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs.net. SQTP is a service mark of Microchip Technology Incorporated in the U. Arizona and Mountain View.  2004 Microchip Technology Inc. Accuron. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. dsPICDEM.S. PRO MATE. Printed on recycled paper. SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U. Select Mode. Microchip Technology Incorporated. PowerInfo. Code protection does not mean that we are guaranteeing the product as “unbreakable. ICSP. No licenses are conveyed. FilterLab. SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S. dsPICDEM. fuzzyLAB. SEEVAL. PowerTool. rfLAB. under any intellectual property rights. California in October 2003. rfPICDEM. PICtail. and other countries. All Rights Reserved.net.S. Microchip believes that its family of products is one of the most secure families of its kind on the market today. you may have a right to sue for relief under that Act. Most likely. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. AmpLab. MPLINK. PICDEM.A. There are dishonest and possibly illegal methods used to breach the code protection feature. the person doing so is engaged in theft of intellectual property. MXLAB. Application Maestro. PICDEM. Analog-for-the-Digital Age. It is your responsibility to ensure that your application meets with your specifications. design and wafer fabrication facilities in Chandler and Tempe. PIC. If such acts allow unauthorized access to your software or other copyrighted work. FanSense.A. All other trademarks mentioned herein are property of their respective companies. DS21420D-page 17 . Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters. nonvolatile memory and analog products.S. PICkit.Note the following details of the code protection feature on Microchip devices: • • Microchip products meet the specification contained in their particular Microchip Data Sheet. PowerCal. ECAN. KEELOQ. Smart Serial. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act.. Microchip is willing to work with the customer who is concerned about the integrity of their code. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information. Trademarks The Microchip name and logo. PowerSmart.

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