ON Semiconductort

SCANSWITCH™
NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors
The MJE16204 is a state–of–the–art SWITCHMODE™ bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very resolution, full page, monochrome monitors.

MJE16204
POWER TRANSISTORS 6.0 AMPERES 550 VOLTS — VCES 45 AND 80 WATTS

• • • • •

550 Volt Collector–Base Breakdown Capability Typical Dynamic Desaturation Specified (New Turn–Off Characteristic) Application Specific State–of–the–Art Die Design Isolated or Non–Isolated TO–220 Type Packages Fast Switching: 65 ns Inductive Fall Time (Typ) 680 ns Inductive Storage Time (Typ) 0.4 Volts at 3.0 Amps Collector Current and 400 mA Base Drive

• Low Saturation Voltage: • Low Collector–Emitter Leakage Current —
100 µA Max at 550 Volts — VCES

• High Emitter–Base Breakdown Capability For High Voltage Off Drive
Circuits — 9.0 Volts (Min)

• Case 221D is UL Recognized at 3500 VRMS: File #E69369
CASE 221A–09 TO–220AB MJE16204

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

© Semiconductor Components Industries, LLC, 2001

1

April, 2001 – Rev. 2

Publication Order Number: MJE16204D

TA = 25_C. Duty Cycle v 10%. Tstg –55 to 150 MJE16204 THERMAL CHARACTERISTICS Characteristic Symbol RθJC TL Max 260 Unit _C Thermal Resistance — Junction to Case 1. 14 Per Fig. (2) Proper strike and creepage distance must be provided.64 Watts W/_C _C Operating and Storage Temperature Range TJ. 16 VISOL Collector Current — Continuous — Pulsed (1) Base Current — Continuous — Pulsed (1) IC ICM IB IBM 6. and a mounting torque of 6 to 8 inSlbs.0 ms. Humidity < 30%) Per Fig. the device mounted on a heatsink thermal grease applied.0 4.56 _C/W Lead Temperature for Soldering Purposes 1/8″ from the case for 5 seconds (1) Pulse Test: Pulse Width = 5.0 — — — Unit Vdc Vdc Vdc V Collector–Emitter Breakdown Voltage Collector–Emitter Sustaining Voltage Emitter–Base Voltage VCEO(sus) VEBO RMS Isolation Voltage(2) (for 1 sec. 15 Per Fig. *Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die).0 0.0 2.0 8.2 Adc Adc mJ Repetitive Emitter–Base Avalanche Energy Total Power Dissipation @ TC = 25_C Total Power Dissipation @ TC = 100_C Derated above TC = 25_C W(BER) PD 80 32 0.ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS Rating Symbol VCES MJE16204 550 250 8. http://onsemi.com 2 . Rel.

IB = 400 mAdc) VCE(sat) Vdc — — — 0.4 0. VCE = 0.0 Adc. ftest = 1.0 A.0 Vdc.0 11 Collector–Emitter Sustaining Voltage (Table 1) (IC = 10 mAdc.0 A. IC = 0) V(BR)EBO 8. RBE = 22 Ω) 10 — — MHz µJ EB(off) Cc–hs 6.ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS (3) Symbol Min Typ Max Unit Collector Cutoff Current (VCE = 550 Vdc.0 MHz) Emitter–Base Turn–Off Energy (EB(avalanche) = 500 ns.5 20 VBE(sat) hFE Vdc — DC Current Gain (ICE = 6.0 Adc. VBE = 0 V) Emitter–Base Leakage (VEB = 8.0 Collector–Heatsink Capacitance (Mounted on a 1″ x 2″ x 1/16″ Copper Heatsink. ftest = 100 kHz) tds — — 50 90 — — ns Cob fT 150 — — — pF Gain Bandwidth Product (VCE = 10 Vdc. IB = 400 mA) Storage Fall Time ns tsv tfi — — 680 65 1500 150 (3) Pulse Test: Pulse Width = 300 µs.0 Adc. IB = 0) VCEO(sus) 250 325 ON CHARACTERISTICS (3) Collector–Emitter Saturation Voltage (IC = 1. ftest = 100 kHz) pF SWITCHING CHARACTERISTICS Inductive Load (Table 2) (IC = 3. MJE16204 http://onsemi. IB1 = 400 mA) Output Capacitance (VCE = 10 Vdc. Duty Cycle v 2.0 DYNAMIC CHARACTERISTICS Dynamic Desaturation Interval (IC = 3. IB = 133 mAdc) (IC = 3.6 1.0 A. IC = 0) ICES — — — — 100 10 — — µAdc µAdc Vdc Vdc IEBO Emitter–Base Breakdown Voltage (IE = 1. IE = 0. VCE = 5.0%. IB = 400 mAdc) Base–Emitter Saturation Voltage (IC = 3.0 1.0 Adc.9 14 0.6 3.0 Vdc) 8.0 mA.25 0.com 3 . IC = 1.

7 0.2 TJ = 25°C 10 7 5 3 2 1 0.3 0.1 0.2 0.7 IC.03 0. Typical Transition Frequency http://onsemi. BASE CURRENT (AMPS) 2 3 7 10 20 30 IC. BASE-EMITTER VOLTAGE (VOLTS) 30 20 10 7 5 3 2 1 0.3 0.7 1 2 3 5 7 TJ = 25°C TJ = 100°C IC/IB1 = 10 7.com 4 .3 0.1 0.07 0.1 0.3 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 50 hFE .2 0.5 5 10 7 5 3 0.05 0.7 1 2 3 5 IC/IB1 = 5 to 10 IC = 1 A 2A 3A 6A TJ = 25°C TJ = 100°C 0. Typical Base–Emitter Saturation Voltage 10K f T. COLLECTOR CURRENT (AMPS) 7 10 0.MJE16204 VCE .7 0.5 3 VCE = 10 V ftest = 1 MHz TC = 25°C 10 0. DC CURRENT GAIN 30 20 TJ = 100°C 25°C -ā55°C VCE = 5 V 10 7 5 3 2 1 0. Typical Collector–Emitter Saturation Region Figure 4.05 0.1 0.5 0.1 0.5 0.2 0. COLLECTOR CURRENT (AMPS) Figure 5.5 1 1.5 0.5 0.03 0. TRANSITION FREQUENCY (MHz) 5K 3K 2K C.3 0.3 0. Typical Capacitance Figure 6.07 0.7 1 IB. COLLECTOR-EMITTER VOLTAGE (VOLTS) VBE. CAPACITANCE (pF) 1K 500 300 200 100 50 30 20 Cob TC = 25°C Cib 20 18 16 14 12 10 8 6 4 2 0 0 0.2 0.5 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1K VR.7 0.5 2 2.2 0.5 2 1 3 5 IC. Typical Collector–Emitter Saturation Voltage VCE . REVERSE VOLTAGE (VOLTS) IC. COLLECTOR CURRENT (AMPS) Figure 1.1 0. COLLECTOR CURRENT (AMPS) Figure 3. Typical DC Current Gain Figure 2.5 0.3 0.

http://onsemi. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current.6 0.03 0. Figure 8 gives the RBSOA characteristics. TJ(pk) is variable depending on power level. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.3 0. COLLECTOR CURRENT (AMPS) d c 1Ăms 0. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. in most cases. Maximum Forward Biased Safe Operating Area Figure 8. the transistor must not be subjected to greater dissipation than the curves indicate. Maximum Reverse Biased Safe Operating Area SAFE OPERATING AREA INFORMATION FORWARD BIAS 1 0..8 0. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9.05 0. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE(pk).02 0.07 0. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation. Power Derating For inductive loads. thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.4 0.2 TC = 25°C 7 IC. The data of Figure 7 is based on TC = 25_C. high voltage and high current must be sustained simultaneously during turn–off. PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. i. This can be accomplished by several means such as active clamping. At high case temperatures.01 3 5 SECONDARY BREAKĆ DOWN WIREBOND LIMIT THERMAL LIMIT 200 250 50 70 100 7 10 20 30 VCE. RC snubbing. COLLECTOR CURRENT (AMPS) MJE16204 10 µs 6 5 4 3 2 1 0 50 IC/IB1 ≥ 5 TJ ≤ 100°C 150 250 350 450 550 VBE(off) = 0 V VBE(off) = 5 V IC.5 0. etc. load line shaping. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage–current condition allowable during reverse biased turnoff.MJE16204 SAFE OPERATING AREA 10 7 5 3 2 1 0.2 0 THERMAL DERATING SECOND BREAKĆ DOWN DERATING There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.com 5 . with the base–to–emitter junction reverse biased. CASE TEMPERATURE (°C) Figure 9.e.1 0. REVERSE BIAS POWER DERATING FACTOR 2 0 40 60 80 100 120 140 160 TC.7 0.

com 6 . 214 OR EQUIV. http://onsemi. *IC + RB2 2N533 7 10 0 -āV IC VCE(pk) L MR85 6 Vclamp VCC VCE IC(pk) + 10 0 +āV ≈ 11 V 20 10 µF RB1 2N619 1 A 1 µF A *IB IB1 IB IB2 V(BR)CEO L = 10 mH RB2 = ∞ VCC = 20 Volts *Tektronix *P–6042 or *Equivalent RBSOA L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 Note: Adjust –āV to obtain desired VBE(off) at Point A.U. P.MJE16204 Table 1.P.T . 0 ≈ -ā35 V 0.02 µF 5 0 50 0 T1 0V Lcoil (ICpk) T1 [ VCC T1 adjusted to obtain IC(pk) 50 +āV -āV T.02 µF H. RBSOA/V(BR)CEO(sus) Test Circuit 0.G.

005 7 R2 R510 SYN C Q 1 BS17 0 T1: Ferroxcube Pot Core #1811 P3C8 Primary/Sec.01 µF LY = 13 µH http://onsemi.MJE16204 Table 2. Turns Ratio = 18:6 Primary Inductance Gap: LP = 250 µH R3 250 (DC) 8 O S %C C5 0.2 V C6 100 µF + LY R5 1k (IC) Q5 MJ11016 C1 100 µF R7 2.1 6 VCC G N D 100 V R10 470 1W Q3 MJE 15031 T 1 R12 470 1W D1 MUR11 0 L B R4 22 D2 MUR46 0 CY OU T 1 U1 MC1391P VCE Q4 DUT R6 1k 2 LB = 0.7 k R8 9.com 7 . High Resolution Deflection Application Simulator +ā24 V U2 MC7812 + VI G N D VO C2 10 µF + Q2 MJ11016 (IB ) R1 1k 6.1 k R9 470 + R10 47 C3 10 µF C4 0.5 µH CY = 0.

5 10 200 TC = 25°C t s . Deflection Simulator Switching Waveforms From Circuit in Table 2 Figure 13. Definition of Dynamic Saturation Measurement The SCANSWITCH series of bipolar power transistors are specifically designed to meet the unique requirements of horizontal deflection circuits in computer monitor applications. the output transistor must remain in hard saturation during storage time and exhibit a rapid turn–off transition.0 volts (Figures 12 and 13) and typical performance at optimized drive conditions has been specified. a more important indicator of circuit performance as scan rates are increased is a new characteristic. Typical Collector Current Storage Time in Deflection Circuit Simulator Figure 11. excellent turn–off switching performance. STORAGE TIME (ns) 300 200 30 20 1 2 3 5 IC.0 to 5. COLLECTOR CURRENT (AMPS) 7 10 Figure 10. Roll off in the collector current ramp results in improper beam deflection and distortion of the image at the right edge of the screen.com 8 . Design changes have been made in the structure of the SCANSWITCH series of devices which minimize the dynamic desaturation interval. Optimization of device structure results in a linear collector current ramp. “dynamic desaturation. deflection transistor design was focused on minimizing collector current fall time. Typical Collector Current Fall Time in Deflection Circuit Simulator DYNAMIC DESATURATIION COLLECTOR-EMITTER VOLTAGE (VOLTS) 90% IC(pk) IC 0 0 0% IB VCE = 20 V tsv 10% IC(pk) tfi VCE 5 VCE 4 3 2 1 0 tds TIME (ns) DYNAMIC SATURATION TIME IS MEASURED FROM VCE = 1 V TO VCE = 5 V Figure 12. As the saturation voltage of the output transistor increases.MJE16204 2K TC = 25°C tf . the voltage across the yoke drops. and significantly lower overall power dissipation. Historically.” In order to assure a linear collector current ramp. COLLECTOR CURRENT (AMPS) 7 1 2 3 5 IC. Dynamic desaturation has been defined in terms of the time required for the VCE to rise from 1. A sluggish transition results in serious consequences.5 10 100 70 50 ICI/B1 = 7. http://onsemi. FALL TIME (ns) 1K 700 500 ICI/B1 = 7. While fall time is a valid figure of merit.

05 0.2 0.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) .01 RθJC(t) = r(t) RθJC RθJC = 1.1 0.05 0.01 0.2 0. Typical Thermal Response for MJE16204 http://onsemi. TIME (ms) 10 20 50 r(t).com 9 .1 0. TRANSIENT THERMAL RESISTANCE (NORMALIZED) P(pk) t1 t2 200 500 10 k DUTY CYCLE. D = t1/t2 100 Figure 14.05 0.02 0.01 SINGLE PULSE 0.1 0.7 0.TC = P(pk) RθJC(t) 2 5 t.5 0.02 0.5 1 D = 0.5 0.MJE16204 1 0.2 0.02 0.07 0.

75 9.61 3.620 0.000 0.MJE16204 PACKAGE DIMENSIONS TO–220AB CASE 221A–09 ISSUE AA –T– B 4 SEATING PLANE NOTES: 1.055 0.500 0.73 2. CONTROLLING DIMENSION: INCH.com 10 .97 6.04 2.190 0.66 2.82 0.570 0.15 1.235 0.83 5.46 0.060 0.190 0.105 0.160 0. DIMENSIONING AND TOLERANCING PER ANSI Y14.110 0.42 2.405 0.045 0.80 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.155 0. 2.025 0.79 1.045 0.110 0.5M.045 ----0.380 0.52 4.33 2.48 15.70 14.210 0.54 3.00 1.04 F T S C Q 1 2 3 A U K H Z L V G D N R J http://onsemi.562 0.100 0.64 12.095 0.15 ----2.15 1.47 0.28 4.255 0.93 0.120 0.025 0. 1982.142 0.39 5.27 1.018 0.64 0.080 MILLIMETERS MIN MAX 14. 3.080 0.035 0.27 1.147 0.88 3. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.04 2.66 10.050 0.07 4.

com 11 .MJE16204 Notes http://onsemi.

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