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TM

HCTS245MS
Radiation Hardened Octal Bus Transceiver, Three-State, Non-Inverting
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20 TOP VIEW
DIR A0 A1 A2 A3 A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 20 VCC 19 OE 18 B0 17 B1 16 B2 15 B3 14 B4 13 B5 12 B6 11 B7

September 1995

Features
• 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Latch-Up Free Under Any Conditions • Fanout (Over Temperature Range) - Bus Driver Outputs - 15 LSTTL Loads • Military Temperature Range: -55
oC

to

+125oC

• Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V • LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min • Input Current Levels Ii ≤ 5µA at VOL, VOH

GND 10

Description
The Intersil HCTS245MS is a Radiation Hardened NonInverting Octal Bidirectional Bus Transceiver, Three-State, intended for two-way asynchronous communication between data busses. The HCTS245MS allows data transmission from the A bus to the B bus or from the B bus to the A bus. The logic level at the direction input (DIR) determines the data direction. The output enable input (OE) puts the I/O port in the high-impedance state when high. The HCTS245MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS245MS is supplied in a 20 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).

20 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F20 TOP VIEW
DIR A0 A1 A2 A3 A4 A5 A6 A7 GND 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VCC OE B0 B1 B2 B3 B4 B5 B6 B7

Ordering Information
PART NUMBER HCTS245DMSR HCTS245KMSR HCTS245D/Sample HCTS245K/Sample HCTS245HMSR TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sample Die PACKAGE 20 Lead SBDIP 20 Lead Ceramic Flatpack 20 Lead SBDIP 20 Lead Ceramic Flatpack Die DB NA

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002. All Rights Reserved 1

Spec Number File Number

518615 2360.2

7. 12) N TO OTHER 7 CIRCUITS 9 (2. 8) A DATA DIR 1 OUTPUT ENABLE 19 TRUTH TABLE CONTROL INPUTS OE L L H DIR L H X OPERATION B Data to A Bus A Data to B Bus Isolation H = High Voltage Level. Spec Number 2 518615 . 16. 14. 17. 3. 4. L = Low Voltage Level.HCTS245MS Functional Diagram ONE OF 8 TRANSCEIVERS P N P B DATA 11 (18. 13. X = Immaterial To prevent excess currents in the High-Z (Isolation) modes. 6. all I/O terminals should be terminated with 10kΩ to 1MΩ resistors. 15. 5.

4V. . . . . . . . . . . . . . .5V. . . . . . .8V Input High Voltage (VIH) . Any One Output . . . . .5V. -55oC +25oC +125oC. . . . . . . . VIL = 0V 1 2. -55oC +25oC +125oC. -55oC - V 1 2.8V Input Leakage Current IIN VCC = 5.5V Operating Temperature Range (TA) . . . . . . . . VIH = 2.0 ±1 ±50 - µA µA µA µA - Three-State Output Leakage Current IOZ VCC = 5. .5V to +5. . . . . . . All voltages reference to device GND. . . -55oC +25oC +125oC. . 2. 2. . . . . . .2 -6. . . VIH = 2. . 2. .25V. .0V to 0.47W If device power exceeds package dissipation capability. . . IOL = 50µA. . . . . +4.5V. . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . .5V. . . . . . . VIL = 0.8V Output Voltage High VOH VCC = 4. +175oC ESD Classification . . . . . . 8A. . . VIN = VCC or GND Output Voltage Low VOL 1. . . VIL = 0. .5 ±5. . . . . . . . . . . VIN = VCC or GND 1 2. . . . . Spec Number 3 518615 . . . 8B 1. . . 0. . +125oC. . . Exposure to absolute maximum rating conditions for extended periods may affect device reliability. . VIH = 4. . . . VIH = 2. . .8V VCC = 5.5V. . For functional tests VO ≥ 4. . 2. . .VCC/2 to VCC TABLE 1. .-0. . . . . . ±10mA DC Drain Current. . . . . . .5V VCC (TR. . . . . VIL = 0. . .5V. . . . VIH = 2. VIL = 0. -55oC ±0. . 2. 107oC/W 28oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . 0. . . . . . Any One Input . .75V. . . . . . . . . . .Specifications HCTS245MS Absolute Maximum Ratings Supply Voltage (VCC). . . .69W Ceramic Flatpack Package . . 3 Output Current (Sink) IOL VCC = 4. . VIL = 0. . . . . . . . . . . . 3 +25oC +125oC. . . -55oC - 0. . . VIH = 2. . . .1 VCC -0. . . . . . VOUT = VCC -0. . .5V DC Input Current. . . . . . .5V to VCC +0. . . . . 0.5V. . . IOL = 50µA.1 V 1. . . . . 3 +25oC.25V. 3 +25oC. . VOUT = 0. . . . . . .3mW/oC CAUTION: As with all semiconductors. . 9. . .0V Input Voltage Range. . . . . . . .. . . . . . 3 1. . . . . . 500ns Max Input Low Voltage (VIL). . . . . . . . ±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . 3 +25oC. . IOH = -50µA. . . . .25V. . . Applied Voltage = 0V or VCC 1 2. VIH = 4. . . . The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation. . . . . . . . .8V (Note 2) 7. 3 Noise Immunity Functional Test NOTES: FN VCC = 4. . . . 3 Output Current (Source) IOH VCC = 4. . 3 LIMITS TEMPERATURE +25oC +125oC. . . . . . . . -55oC +25oC. .8V VCC = 5. . -55oC +25oC. . . . . . . . DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2. . . . . . . . . . . . -55oC MIN 7. 13. . . Operating Conditions Supply Voltage (VCC).0 -7. . . . . . . provide heat sinking or derate linearly at the following rate: SBDIP Package. . . VIL = 0V VCC = 4. . . . . +265oC Junction Temperature (TJ) . . . . . . . .9mW/oC Ceramic Flatpack Package . . . . +125oC. . . . . Class 1 Reliability Information Thermal Resistance θJA θJC SBDIP Package. . . . . . . .0V is recognized as a logic “1”. .5V is recognized as a logic “0”. stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. . . .5V. TF) . This is a stress rating only. and VO ≤ 0. . .5V. . . . .1 UNITS µA µA mA mA mA mA V PARAMETER Quiescent Current SYMBOL ICC (NOTE 1) CONDITIONS VCC = 5. . -55oC to +125oC Input Rise and Fall Times at 4.5V. . . . . . . . +125oC.5V. . .1 - - V 1. 72oC/W 24oC/W Ceramic Flatpack Package . . +125oC. +125oC.2 6.0 MAX 40 750 0. .5V. . . . . . . . . . -0. . . .75V. . . . . All Inputs . .5V to +7. . . . . . . . . . . . .4V. . . IOH = -50µA. . . . . . -55oC VCC -0. . . . . . .

11 TPZH VCC = 4.0V. 11 TPHL VCC = 4. 2.Specifications HCTS245MS TABLE 2. -55oC +25oC +125oC +25oC +125oC. -55oC MIN 2 2 2 2 2 2 2 2 2 2 MAX 18 21 21 24 28 33 26 31 28 33 UNITS ns ns ns ns ns ns ns ns ns ns PARAMETER Propagation Delay Data to Output SYMBOL TPLH (NOTES 1. 55oC MIN MAX 68 68 10 10 12 18 UNITS pF pF pF pF ns ns Spec Number 4 518615 . 11 Enable to Output TPZL VCC = 4. Min and Max Limits are guaranteed but not directly tested. -55oC +25oC +125oC. 2) CONDITIONS VCC = 4. VIL = GND. -55oC +25oC +125oC.0V. LIMITS TEMPERATURE +25oC +125oC. -55oC +25oC +125oC. TEMPERATURE +25oC +125oC. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.5V 9 10. f = 1MHz NOTES 1 1 Input Capacitance CIN VCC = 5.5V 9 10.5V 1 1 NOTE: 1. 11 Disable to Output TPLZ TPHZ VCC = 4. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation SYMBOL CPD CONDITIONS VCC = 5. CL = 50pF.5V 9 10. -55oC +25oC +125oC. The parameters listed in Table 3 are controlled via design or process parameters.5V 9 10. All voltages referenced to device GND. f = 1MHz 1 1 Output Transition Time TTHL TTLH VCC = 4. 11 NOTES: 1. Input TR = TF = 3ns.5V TABLE 3. VIH = 3V. AC measurements assume RL = 500Ω. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10.

VOUT = 0. DELTA PARAMETERS (+25oC) GROUP B SUBGROUP 5 5 5 PARAMETER ICC IOL/IOH IOZL/IOZH DELTA LIMIT 12µA -15% of 0 Hour ±200nA Spec Number 5 518615 . VIN = VCC or GND.4V VCC = 4. 2.5V.5V.5V VCC = 4. VCC = 5.8V.5V VCC = 4. CL = 50pF. VIH = VCC/2. 2) CONDITIONS VCC = 5.5V.4V VCC = 4.5V VCC = 4. and VO ≤ 0. AC measurements assume RL = 500Ω. For functional tests VO ≥ 4. (Note 3) VCC = 4.25V. VIL = 0. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS PARAMETER Quiescent Current Output Current (Sink) SYMBOL ICC IOL (NOTES 1. 3.1 - - V Input Leakage Current Three-State Output Leakage Current Noise Immunity Functional Test Propagation Delay Data to Output IIN IOZ +25oC +25oC ±5 ±50 µA µA FN VCC = 4.5V +25oC - - - TPLH TPHL +25oC +25oC +25oC +25oC 2 2 2 2 2 21 24 33 31 33 ns Enable to Output TPZL TPZH ns ns ns Disable to Output TPLZ TPHZ NOTES: 1.5V.5V.Specifications HCTS245MS TABLE 4.5V and 5. VIH = 2. VIN = VCC or GND.0V is recognized as a logic “1”. VIN = VCC or GND VCC = 4. Input TR = TF = 3ns. VIL = GND. VOUT = VCC -0.0 MAX 0.8V. VIH = VCC/2.75 UNITS mA mA Output Current (Source) Output Voltage Low IOH +25oC -6.0 - mA VOL +25oC - 0.8V. All voltages referenced to device GND. VIL = 0. VIL = 0. BURN-IN AND OPERATING LIFE TEST. VIH = 3V.1 V Output Voltage High VOH +25oC VCC -0.5V TEMPERATURE +25oC +25oC MIN 6.5V VCC = 4.5V.5V.5V is recognized as a logic “0”.5V and 5. IOL = 50µA VCC = 4. TABLE 5. IOH = -50µA VCC = 5. VIN = VCC or GND Applied Voltage = 0V or VCC.

8A.18 1. 3.5V VCC = 6V ± 0. 7. 11 . 9 POST RAD Table 4 (Note 1) NOTE: 1. Each pin except VCC and GND will have a resistor of 10kΩ ± 5% for static burn-in 2. 20 2-9 19 TABLE 9. 9 1. 9 1. 7. 10. 8B.9. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group E Subgroup 2 METHOD 5005 PRE RAD 1. IOL/H. 3. 8A. 7. Except FN test which will be performed 100% Go/No-Go. 7. 10.20 - DYNAMIC BURN-IN TEST CONNECTIONS (Note 2) NOTES: 1. sample size is 4 dice/wafer 0 failures. 7. 11 1. IOZL/H ICC.9. 9 1. 7. 9. 9 Subgroups 1.5V 50kHz 25kHz STATIC BURN-IN I TEST CONNECTIONS (Note 1) 2-9 1. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V ± 0. IOZL/H READ AND RECORD ICC. IRRADIATION TEST CONNECTIONS OPEN GROUND 10 VCC = 5V ± 0. 10. Subgroup 2. 11 . 9 1.20 NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. 2. Each pin except VCC and GND will have a resistor of 680Ω ± 5% for dynamic burn-in 10 11 . Deltas 1. IOL/H. Alternate Group A Testing in accordance with Method 5005 of MIL-STD-883 may be exercised.19 20 - STATIC BURN-IN II TEST CONNECTIONS (Note 1) 10 1 . IOL/H. 7. 8A. 10. 9 1. 9. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1.Specifications HCTS245MS TABLE 6. 7. 11 ICC. 2. 7.5V 1 . Group E. 3. TABLE 8. Deltas 2. TABLE 7. 9. 9 POST RAD Table 4 READ AND RECORD PRE RAD 1. 10 . 8B. Deltas 1. 7. 8B. 7. 11. 2. IOL/H. Spec Number 6 518615 . 9. 9. IOZL/H ICC. 3. 11 1. IOZL/H NOTE: 1.

Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. • Lot Serial Number Sheet (Good units serial number and lot number). 0 Rejects 100% Nondestructive Bond Pull. Failures from subgroup 1. Specification Numbers. Method 1015 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7.Die Shear Monitor. Number. Alternate Group A testing may be performed as allowed by MIL-STD-883. • X-Ray report and film. Condition A or B. +125oC min. Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1.HCTS245MS Intersil Space Level Product Flow . Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1. 4 Samples/Wafer.. Method 5005 (Note 4) 100% Data Package Generation (Note 5) NOTES: 1. Method 2023 Sample . The Certificate of Conformance is signed by an authorized Quality Representative. Method 2009 Sample . min. Condition D. Data header includes lot number and date of test. Test equipment. min. • Variables Data (All Delta operations). Method 2001. Condition A 100% Temperature Cycle. 9 and deltas are used for calculating PDA. disposition. Method 2012 (Note 3) 100% External Visual. AC Timing Diagrams VIH VS VIL TPLH TPHL VOH VS VOL VOH TTLH 80% VOL 20% 80% 20% TTHL OUTPUT INPUT AC Load Circuit DUT TEST POINT CL RL CL = 50pF RL = 500Ω OUTPUT AC VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND HCTS 4.Group A. Lot Date Code. Condition A or B. Includes reproductions of SEM photos with percent of step coverage. Electrical.O. etc. and Group A attributes (Screening attributes begin after package seal). Quantity). Lot Number. Condition per Method 5004 100% PIND. 10 Cycles 100% Constant Acceleration. Method 5005. • Wafer Lot Acceptance Report (Method 5007). 240 hrs. Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak.. 24 hrs. 3. • Screening..Wire Bond Pull Monitor. Radiation Read and Record data on file at Intersil. Method 2020. Method 2011 Sample . 7. Condition C. Data Package Contents: • Cover Sheet (Intersil Name and/or Logo. Test Package used. Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2. Method 5004 (Notes 1and 2) 100% Dynamic Burn-In. Intersil Part Number.30 0 0 UNITS V V V V V Spec Number 7 518615 . Contains Cover page.‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019. +125oC min. • GAMMA Radiation Report. Customer Part Number. 5. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. Method 2010. Data is identified by serial number. 24 hrs. +125oC or Equivalent. Lot Number. 2.. 4.00 1. Rad Dose..50 3. P. Method 2019 or 2027 100% Internal Visual Inspection. Method 1010. Includes penetrometer measurements. Method 1014 100% Radiographic.

30 0.00 1.30 3.50 3.30 1.60 0 UNITS V V V V V V Spec Number 8 518615 .00 1.90 0 UNITS V V V V V V RL = 500Ω Three-State High Timing Diagrams VIH VS VIL TPZH TPHZ VOH VT VOZ OUTPUT VW INPUT Three-State High Load Circuit DUT TEST POINT RL CL = 50pF RL = 500Ω THREE-STATE HIGH VOLTAGE LEVELS PARAMETER VCC VIH VS VT VW GND HCTS 4.50 3.30 1.HCTS245MS Three-State Low Timing Diagrams VIH VS VIL TPZL TPLZ VOZ VT VOL CL CL = 50pF OUTPUT VW DUT TEST POINT RL INPUT Three-State Low Load Circuit VCC THREE-STATE LOW VOLTAGE LEVELS PARAMETER VCC VIH VS VT VW GND HCTS 4.

For information regarding Intersil Corporation and its products.6kÅ WORST CASE CURRENT DENSITY: <2. nor for any infringements of patents or other rights of third parties which may result from its use.0 x 105A/cm2 BOND PAD SIZE: 100µm x 100µm 4 mils x 4 mils Metallization Mask Layout HCTS245MS (20) VCC (19) OE (1) DIR NC NC NC A0 (2) NC (18) B0 A1 (3) (17) B1 A2 (4) (16) B2 A3 (5) (15) B3 A4 (6) (14) B4 A5 (7) (13) B5 GND (10) NOTE: The die diagram is a generic plot from a similar HCS device. Intersil Corporation’s quality certifications can be viewed at www.com/design/quality Intersil products are sold by description only. the reader is cautioned to verify that data sheets are current before placing orders.intersil.com Spec Number 9 B6 (12) A6 (8) A7 (9) B7 (11) 518615 . software and/or specifications at any time without notice. Information furnished by Intersil is believed to be accurate and reliable. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. However. It is intended to indicate approximate die size and bond pad location. see www. no responsibility is assumed by Intersil or its subsidiaries for its use. All Intersil U. Intersil Corporation reserves the right to make changes in circuit design.HCTS245MS Die Characteristics DIE DIMENSIONS: 124 x 110 mils METALLIZATION: Type: SiAl Metal Thickness: 11kÅ ± 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ ± 2.S. assembled and tested utilizing ISO9000 quality systems. The mask series for the HCTS245 is TA14417A.intersil. Accordingly. products are manufactured.