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Paul Harden, NA5N

HOMEBREWER
The

No. 5 2N2222 2N3904 2N4401 MPS2222 MPS3904

The Handyman's Handyman's Guide Guide to to The UNDERSTANDING UNDERSTANDING TRANSISTOR TRANSISTOR DATA SHEETS SHEETS DATA & SPECIFICATIONS SPECIFICATIONS &
Introduction The most common bipolar junction transistors (BJT) used by hobbyists and QRPers are the 2N2222, 2N3904 and 2N4401 . These NPN transistors have similar characteristics, and perform well at HF frequencies. This tutorial explains how to "read" the data sheets on these devices and understand the specifications which will enable you to interpret data sheets for other devices as well. ____________________
The manufacturer's data sheets contains information in the following general categories: 1. 2. 3. 4. Maximum (Breakdown) Ratings "On" Characteristics Small Signal Characteristics Switching Characteristics

s ' r e P QR Favorite

GENERAL PURPOSE NPN TRANSISTORS

TO92
Plastic Encapsulated Transistor

C B E

EB C

TO18
Metal Can Transistor E B C Bottom View C B E

SOT-23
Surface Mount Transistor C

MMBT2222LT1 MMBT3904LT1 MMBT4401LT1

1. Maximum (Breakdown) Ratings

The maximum ratings are provided to ensure that the voltages and currents applied do not damage or cause excessive heating to the device. The maximum ratings for the 2N2222, 2N3904 and 2N4401are shown in Table 1. The voltages, currents and power dissipation listed should not be exceeded to prevent damage to the device. VCEO is the maximum collectoremitter voltage and VCBO is the maximum collector-base voltage. Fortunately, these breakdown voltages are well above the typical 12v used in most QRP applications. This is not the case with VEBO, the maximum emitter-base voltage, typically 56v. If exceeded, this can cause a physical breakdown of the base junction, destroying the
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Table 1 MAXIMUM (BREAKDOWN) RATINGS

2N 2222 CollectorEmitter CollectorBase EmitterBase Max. Coll. Current Power dissipation 1 VCEO VCBO VEBO Ic Pd 30v 60v 5v 2N 2222A 40v 75v 6v 2N 3904 40v 60v 6v 2N 4401 40v 60v 6v MMBT 3904 40v 60v 6v

600mA 600mA 200mA 600mA 200mA 625mW 625mW 625mW 625mW 225mW 2005, AmQRP, All rights reserved

Handyman's Guide to . . . UNDERSTANDING TRANSISTOR DATA SHEETS

transistor. In a circuit, the biasing scheme sets the baseemitter voltage, VBE, to be safely below VEBO. However, in large-signal applications, VBE must include the DC base bias and the peak voltage of the signal to ensure VEBO will not be exceeded.
EBO EBO

NA5N

Rule of thumb for V : V (max) or C Vbe(max) for most general purpose BJTs is 56v the maximum emitter-base voltage. Don't forget to include the peak voltage of the AC signal!

Collector Current, Ic(max), is the other maximum rating to be closely followed. Collector current exceeding Ic(max) Rule of thumb for Ic(max): There isn't one! can damage the transistor, due to excessive current The only safe way to know the maximum Ic through the device, initiating thermal runaway destroying for a transistor is to consult the data sheets. the collector-emitter junction. The destruction of a transistor in this manner is technically Table 2 DC "ON" CHARACTERISTICS called catastrophic substrate failure for good reason! 2N 2N 2N 2N MMBT

2222

2222A 35 50 150 75 250

3904 40 70 200 100 300

4401 20 40 80

3904 40 70 200 100 300 0.2vdc

Most QRP circuits are usually biased for well below Ic(max). Vbe(max) and Ic(max) are generally a concern only in largesignal applications, such as RF drivers, PA stages, and some oscillator circuits.

DC Current Gain, HFE Ic= 0.1mA, VCE=10v HFE Min. Ic=1.0 mA, VCE=10v Ic= 10 mA, VCE=10v HFE Min. HFE Max. HFE Min. HFE Max.

35 50 150 75 225

2. ON CHARACTERISTICS

Collector-Emitter Saturation Voltage, VCE(sat) Ic= 150mA, IB= 15mA VCE(sat) 0.4vdc 0.3vdc 0.3vdc 0.4vdc

These specifications define the Base-Emitter Saturation Voltage, VBE(sat) DC performance of the device Ic= 150mA, IB= 15mA VBE(sat) 1.3vdc 1.2vdc 0.85vdc 0.95vdc .85vdc while it is forward biased (Vbe >0.7v), causing collector current Ic=50mA, IB=5mA on 2N3904 to flow, or "on." The DC Characteristics in Table 2 are not absolute design values, Rule of thumb for HFE: but rather test values as measured by the manufacturer. Conventions used in electronic literature: This is why the data is listed with the test conditions, such as "Ic=1mA, VCE=10v." HFE or hFE (upper case letters) is the DC Current Gain HFE is the measured DC current gain of the transistor (see Hfe or hfe (lower case) Rule of thumb for HFE). It is used for biasing the device in is the AC current gain the linear region primarily class A. Most data sheets provide HFE at two different collector currents, usually 1 Fig. 1 Constructing an HFE vs. Ic plot and 10mA. Since most QRP circuits are biased for Ic <5mA = HFE values from data sheet (to conserve battery drain), HFE at Ic=1mA is typically 300 used. m ax ) 2 HFE ( 200 3 HFE also varies from transistortotransistor. This is why 150 the data sheets list both HFE (min) and HFE (max). The 100 manufacturer tested a large batch of 2N2222s and in) 70 E (m F determined that hfe ranged from 50 (HFE min) to 150 (HFE H 1 HFE (typ) max) at Ic=1mA, as shown on the data sheets (Table 2). 50 Statistically, most transistors will fall between 50 and 150, or about HFE=100. This is why most design guides will 30 recommend using a value of HFE=100 for bias calculations. Since the 2N3904 has a higher DC current 20 gain, often HFE=150 is recommended for that device. 2N2222

DC Current Gain, HFE

HFE min. and max, at Ic=1 and 10mA, can be plotted on a logarithmic graph (lines 1 and 2 on Fig. 1). The average
AmQRP Homebrewer, Issue #5 2

0.1 0.2 0.3 0.5 1 2 3 5 Collector Current, Ic (mA)

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!
X

10

Handyman's Guide to . . . UNDERSTANDING TRANSISTOR DATA SHEETS

value, HFE typ., can then be drawn (line 3, Fig. 1). This gives you HFE (typ) for various collector currents. The value used for HFE is not critical. Using HFE=100, or even the conservative value of 50, will work 99% of the time. Therefore, one scarcely needs the data sheets for the DC characteristics, as the typical HFE = 100 at Ic=1mA is valid for most general purpose NPN transistors. Fig. 2 shows Ib vs. Ic for HFE at 50 and 100. Collector Current, Ic (mA) Saturation voltages, VCE(sat) and VBE(sat), defines the transistor behavior outside the linear operating region, that is, in the saturated region. This is of interest when operating the transistor as a saturated switch. The keying transistor in a transmitter, forming the +12v transmit voltage on keydown, is an example of a saturated switch. of thumb for HFE: C Rule Most general purpose

NA5N

NPN transistors have a DC HFE = 100 (typ) and thus used in most biasing equations for DC and low frequencies. Fig. 2 Ic vs. Ib defines HFE

10 5 3 2 1 .5 .3 .2 .1 1 10 3 5 30 50 Base Current, Ib (uA) 100

3. SMALL SIGNAL CHARACTERISTICS

The small-signal characteristics describe the AC performance of the device. There is no standardized industry definition of smallsignal (vs. large-signal), but is generally defined where the AC signal is small compared to the DC bias voltage. That is, the signal levels are well within the linear operating region of the transistor.

At Ib=10uA, Ic=0.5mA @ HFE=50 The small signal characteristics include: At Ib=10uA, Ic=1.0mA @ HFE=100 1) gain bandwidth product (Ft) Table 3 SMALL SIGNAL CHARACTERISTICS Part 1 2) the AC current gain (hfe) 2N 2N 2N 2N MMBT 3) input and output impedances 2222 2222A 3904 4401 3904 (hie and hoe) 250 300 300 250 300 4) input and output capacitances Gain Bandwidth Prod. Ft (MHz). (Cibo and Cobo) Small Signal Current Gain, hfe 5) the noise figure (NF).
Ic=1.0 mA, Vce=10v hfe Min. hfe Max. The small signal parameters are Estimated hfe Typ. the most important to understand, as they describe the Ic= 10 mA, Vce=10v HFE Min. HFE Max. transistor's behavior at audio and RF frequencies, and used in the Measured at 1 KHz circuit design equations. These parameters vary greatly from one transistor type to another, such that making assumptions (as we did with DC HFE =~100) can be risky. The data sheets must be used. The small-signal characteristics for Ft and hfe, from the data sheets, are shown in Table 3 50 300 150 75 375 50 300 150 75 375 100 400 200 40 500 225 100 400 200

Table 4 Calculating Ft from Gpe

x=

Gp(dB) 10

FE =5 0

0 =1 E F

Gp(mag) = 10

Gain Bandwidth Product, or Ft, is defined as the frequency at which the AC current gain, hfe, equals 1 (0dB). See Fig. 3 (next page). This is the maximum frequency the device produces gain as an amplifier or oscillator. On RF transistor data sheets, Ft is not always given. Instead, the power gain, Gp (or Gpe for common emitter power gain) is tested at a specific frequency. Ft can be derived from this information as shown in Table 4. Equations x and Gp(mag) convert the power gain, in dB, to unitless magnitude, as is hfe.
AmQRP Homebrewer, Issue #5 3

Ft = f Gp(mag) Example: The data sheet for the 2N5179 lists Gpe=15dB at 200MHz. Determine Ft. x= 15dB = 1.5 10 Gp(mag)= 10
1.5

= 32

Ft = 200MHz

32 = 1130 MHz

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Handyman's Guide to . . . UNDERSTANDING TRANSISTOR DATA SHEETS

hfe is the ac small-signal current gain, and dependent on both frequency and the collector current. Hfe is also known as the ac beta. Ft and hfe work together to define the overall AC gain of the transistor at a specific frequency, as illustrated in Fig. 3. hfeo is the low-frequency hfe, often very close to the DC HFE. The values for hfe shown in the data sheets are normally measured at 1KHz and Ic=1mA (sometimes @10mA). Hfeo is fairly constant from the audio frequencies to about 300 KHz. Beta cut-off frequency, fb, is the "3db point" of hfe, where hfe= 0.707hfeo, or fb=Ft/hfeo. Fb is seldom listed on the data sheets. hfe drops fairly linearly from fb to Ft at 6dB/octave. Fb, and the hfe vs. frequency plots, are seldom shown in the data books. This is why learning to interpret the data sheets is important to determine the actual gain (hfe) a transistor will provide at a specific frequency. Design Example: Constructing an Hfe vs. Frequency Plot Let's figure out what hfe will be for a 2N2222 on the 40M band, using both graphical and equational methods. It's really easy. From Table 3, hfe=50 (min) to 300 (max). Let's pick hfe=150 as the average. Since hfe is measured at 1KHz, this is also hfeo. Draw a line on a chart to represent hfeo=150 (line #1, Fig. 4). Calculate fb and hfe @fb as follows: (Ft=250MHz, 2N2222) fb = Ft/hfeo = 250MHz 150 = 1.7 MHz hfe@fb = .707hfeo = 0.707 x 150 = 106 Draw a dot at hfe@fb on the chart (hfe=106 @ 1.7 MHz) Or ... calculate hfe at the desired frequency, fo, such as 7MHz hfe@fo = Ft/fo = 250MHz 7MHz = 36 Draw a line between fb (or fo) and Ft (line #2, Fig. 4) to complete the hfe vs. frequency plot of the 2N2222 at Ic=1mA. Therefore, at 7 MHz ac gain is hfe = 36 AC Current Gain, hfe How much signal gain will the 2N2222 provide at 144 MHz? hfe = Ft/fo = 250MHz 144MHz = 1.7, or almost unity! This is why general purpose transistors (Ft <400MHz) are not used at VHF for lack of useful gain above ~50 MHz. Hfe vs. Ic. Hfe is also a function of Ic as shown in Fig. 5. This data sheet chart is used to adjust hfe at Ic other than 1mA, where hfe is measured. For designing battery powered circuits, Ic=1mA is recommended. Firstly, data sheet values can be used directly, saving additional calculations, since most parameters are listed for Ic=1mA. Secondly, these transistors have ample gains at Ic=1mA or less. The additional gain at a higher Ic may not justify
AmQRP Homebrewer, Issue #5 4

NA5N

Fig. 3 Common Emitter AC current gain vs. Frequency hfe hfeo

hfeo=hfe @ 1KHz 3dB

slope = 6dB per octave Ft, where hfe=1 Ft

fb, where hfe=.707 hfeo hfe=1

1KHz

fb

Fig. 4 Constructing an hfe gain plot for the 2N2222 (Common Emitter)
hfeo=150 (audio freq.) 300

2 !

AC Current Gain, hfe

100 hfe=106 30 @ 1.7 MHz 10 hfe=36 @ 5 MHz

1 !
36

3 2N2222A 1

Ic = 1mA
0.1 1 10 Frequency, MHz 100 1000

7 MHz Ft=250 MHz

For gain at any frequency, fb < fo < Ft Ft Gain(dB) = 10log(hfe) hfe = fo Fig. 5 Hfe vs. Collector Current
300 200 150 100 70 50 30 0.1

1 2 3

1 2N4401 2 2N3904 3 2N2222

10

0.3 0.5 1 3 5 Collector Current, Ic

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Handyman's Guide to . . . UNDERSTANDING TRANSISTOR DATA SHEETS

the increase in battery drain. I.e., two amplifiers at Ic=1mA will yield far more gain than one amplifier at Ic=2mA. Table 6 shows hfe at different frequencies for the 2N2222. Table 5 lists the remaining smallsignal characteristics. Table 5 SMALL SIGNAL CHARACTERISTICS Part 2
2N 2222 Input capacitance Output capacitance Cibo (max) Cobo (max) 30pF 8pF 2KW 8KW 5* 35* 4dB 2N 2222A 25pF 8pF 2KW 8KW 5* 35* 4dB 2N 3904 8pF 4pF 1KW 10KW 1* 40* 5dB 2N 4401 30pF 7pF 1KW 15KW 1* 30* 4.5dB

NA5N

MMBT 3904 8pF 4pF 1KW 10KW 1* 40* 4dB

Input Impedance, typ. hie (min) hie (max) Output Admittance hoe (min) hoe (max) NF (max)

Input impedance, hie, is the resistive element of the base- Noise Figure emitter junction, and varies with Measured at 1 KHz Ic. It is used for input impedance calculations, and not particularly useful in itself without considering Cibo.

Measured at 1 MHz

* mmhos

Table 6 2N2222 Input Impedances

based on hfeo=150 Freq hfe based on hfe and re Rin based on Xc(Cibo) || hie Xc(Cibo) Zin

Input capacitance, Cibo, is the capacitance across the baseemitter junction. For the 2N2222, Cibo(max)=30pF. The reactance (Xc) of Cibo is in parallel with hie (Xc||hie) causing the equivalent input impedance, Zin, to be frequency dependent as shown in Table 6. As can be seen, Xc(Cibo) dictates the input impedance of the transistor, not hie. Cibo is thus important in estimating Zin at any given frequency. In selecting a transistor for RF, the smaller the value of Cibo, the better. In this case, the input impedance is called Zin, since it includes the frequency dependent reactance components. Input resistance, Rin, for the common-emitter transistor, can also be estimated using hfe and emitter current, Ie, as follows: Rin = re(hfe+1) where, re = 26 Ie(mA) (Ie Ic)

3.5 7.0 10.1 14.0 21.0 28.0 50.0 144

71 36 25 18 12 9 5 2

1872W 962W 676W 494W 312W 234W 130W 52W

1516W 758W 525W 379W 253W 190W 106W 37W

1150W 658W 475W 352W 241W 183W 104W 36W

The results of Rin from the above are also shown in Table 6 for comparison. This method is generally preferred since hfe and Ie are known with greater accuracy than is hie and Cibo. In this case, the input impedance is called Rin, since it only includes resistive components (no reactance components). The differences between the two methods, while close, demonstrates the difficulty in determining with certainty the input impedance of a transistor. Output Admittance, hoe, represents the output resistance of the transistor by taking the reciprocal of the admittance. For example, at hoe(typ)=10umhos, Rout = 1/hoe = 1/10umhos = 100KW. Like hie, hoe is not particularly useful by itself. Output Resistance, Ro, is approximately the parallel equivalent of hoe and the collector load resistance, Rc, or Ro = Rc||hoe. See Fig. 6. Since Rc tends to be in the 15KW range, and hoe 20100KW, Rc will dominate the output resistance of the transistor. As a result, output impedance is usually estimated by: Zo Rc. Note that the output impedance is set primarily by circuit values (Rc), and not by the transistor's small-signal parameters.
AmQRP Homebrewer, Issue #5 5

Rin=re(hfe+1) where, re=26/Ie(mA) =26W@1mA

Zin(eq) = Xc||hie where, Cibo = 30pF hie = 5KW

Fig. 6 Input/Output Impedances

basic amplifier configuration
+12V

Ro =

Rchoe Rc+hoe

Rc
Ra Cc Ein

Rc

Cc

Zo, Ro
Eout

Q1 2N2222

Zin, Rin

Rb Re CE

Rin = re(hfe+1) re = 26 Ie(mA)

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Handyman's Guide to . . . UNDERSTANDING TRANSISTOR DATA SHEETS

Cobo is the output capacitance, and is in parallel with the output resistance. However, Cobo is <10pF in most general purpose NPN transistors and has little effect at HF. This parameter is important in RF transistors operating in the VHF/UHF spectrum, where the shunting effect becomes a significant component of the output impedance. Obviously, the lower the value of Cobo, the better. Noise Figure, NF, is defined as the ratio of the input to the output noise, neither of which is easily measurable by the amateur. The transistor will add noise, then be amplified by the hfe of the device just as the signal is, forming signal plus noise output, or S+N. The excess in the S+N to signal power is due to the noise figure (NF) of the device. For the QRPer, the NF of the transistor is not highly important on HF. See Table 7. Select a transistor with a low NF for the audio stage(s), however, as this is where it will be the most evident. Transconductance, gm, is another parameter provided on some data sheets. If not provided, gm can be estimated by: gm = .038 x Ie(mA).

NA5N

Table 7 HF vs VHF Noise Figures At HF antenna and atmospheric noise is in the 2030dB range, far exceeding the 10-12dB NF of a typical HF receiver. In other words, more noise is introduced to the receiver by the antenna and band conditions than the NF of the stages can introduce. For HF receiver applications, a NF of 4-6dB per transistor is sufficient. This is not the case at VHF. At VHF/UHF antenna and atmospheric noise is very low, often less than 10dB of noise power, making the overall system noise a function of the receiver, and the NF of the individual stages. At VHF/UHF, the NF of the transistors becomes very important, with transistors being selected with NF's in the 1.5dB to 2dB range not uncommon.

4. SWITCHING CHARACTERISTICS
The Switching Characteristics define the operating limits of the transistor when used in pulsed, digital logic, or switching applications. QRP switching circuits include T-R switching, CW keying and band switching circuits using transistors. These are really large-signal characteristics, since the transistor is being driven from cut-off to saturation in most switching applications. Table 8 SWITCHING CHARACTERISTICS
2N 2222 Delay time Rise time Storage time Fall time td tr ts tf 10ns 25ns 225ns 60ns 2N 2222A 10ns 25ns 225ns 60ns 2N 3904 35ns 35ns 200ns 50ns 2N 4401 15ns 20ns 225ns 30ns MMBT 3904 35ns 35ns 200ns 50ns

Fig. 7 illustrates the switching characteristics terms: td, delay time is the time from the input LH transition until the output begins to respond. tr, rise time is the time it takes the output to go from 10% to 90% output voltage. ts, storage time is the time from the input HL transition until the output responds. This is usually the longest delay. tf, fall time is the time it takes the output to go from 90% to 10% output voltage. These switching times, in the tens of nanoseconds, are thousands of times faster than the requirements for QRP applications, and seldom a design criteria when selecting a transistor. It is presented here for completeness only.

Fig. 7 Switching Characteristics tr

HI

tf

INPUT

LO 90%

OUTPUT
10%

td

ts

This tutorial should allow one to interpret the transistor data sheets, whether the complete data sheets from the manufacturer, or the abbreviated listings, such as found in the NTE Cross-Reference or in the ARRL Handbook. Many manufacturer's provide complete data sheets online. Understanding transistor specifications is essential in designing your own circuits, or identifying those "ham fest special" transistors and their suitability for your next project. Biasing transistors using these specs will be presented in a future Handyman's tutorial.
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