Lab 6: Introduction to CAD using MicroTec software

Lab Section Name: Name: Date: Question 1. UWACE logging name: UWACE logging name: ID ID

0.5

0.4 Conduction band edge (e.V.)

0.3

0.2

0.1

0. 0. 0.2 0.4 0.6 Dis tance X (microns) 0.8 1.

) -0.2 Conduction band edge (e. 0.8 -1.V.4 0.6 -0.2 0. -0. 0.6 Dis tance X (m icrons) 0.2 -0.8 1.4 0. 0.4 -0.2 0.6 -0.4 -0.V. .0.6 Dis tance X (microns) 0. 0.8 -1.2 0. Conduction band edge (e.4 0.8 1.2 0.) -0. 0.

0.6 Distance X (m icrons) 0.V. 0.4 0. 0.3 0.2 0.5 0.1 0.2 0. .4 Conduction band edge (e.) 0.8 1.

5 1. 0.0025 0.003 0.0015 0.002 ID 0. . 4. 2.x10 -4 8. 0. 0. VD 1. 6. 1.0005 0. 2.001 0. VD 3. ID 4.5 2.

4 0.8 1.6 VG 0.Q6.2 1. The problem is that because of this property. There is an inverse relatoinship observed between the slope of I D vs. -3. 1. -7. -5.4 Q7. small voltage will cause large electric field across the channel and eventually.t This is why this effect present a challenge to industry. VDS increases as the length of the channel is reduced and this indicatate that more current will flow to shorter channel. ID -6. VDS graph and the length of the channel. Since there are energy being wasted. -4. 0. Moreover. they could stack up at one point and cause heat on the circui. The linear relationship between Ion and Ioff is not preferable since this indicates poor energy efficiency. .2 0. The slope of the graph becomes linear as the length of te channel is reduced. The slope of I D vs. there will be an electron velocity saturation. this leads to hot carrier effect in MOSFET and this presents a challenge to industry because the heat generated inside the circuit is most likely to damage the circuit itself. 0.

0006 ID 0. Therefore. -0. The blue line has longer channel length than that of green line.001 0.0004 0. the IV plot shifts to left.0002 -1. Q8.0008 0.5 0. it is observed that as the channel length is reduced. .0. the blue line (the longer length of the channel) is located right while the green line (the shorter length channel) is located left.5 1. As shown above. VG 0.5 -1.

it can be reduced as much as possible to reduce the threshold voltage as well.001 0. Above graph is very similar to that of Question 8 although work function is varied for this graph. However. The interesting fact is that the work function can be easily controlled by magnitude of doping. . the behaviour is almost identical.5 1.0.5 0. VG 0.0008 ID 0.0002 -1.0006 0. -0.0012 0. As the work fucntion is reduced.5 -1. the IV plot shifts to left. Q9. Since the work function can be controlled as we please. This effect is useful to industry because lowering threold voltage will allow circuit to interact faster.0004 0.

As shown above.0004 0. This is because by physically reducing the width. VG 1.0018 0. it is logical that higher current will flow from the source.0002 0.5 2.0006 0. the slope of blue line is steeper than that of green line and this result is expected since there are relationship between the physical length of source to drain width and the current going in from source to drain.0.001 0. Q10. . Since the barrier is lowered.5 1. 0. the higher the current will flow from the source. we are lowering ΔEc and eventually we are lowering the barrier as well.0008 0.0016 0. The more reduced the width of soruce is.0014 0.002 0.0012 ID 0.

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