N

2N5401
C C BE

2N5401 / MMBT5401

Discrete POWER & Signal Technologies

MMBT5401

E

TO-92

SOT-23
Mark: 2L

B

PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.

Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25°C unless otherwise noted

Parameter

Value
150 160 5.0 200 -55 to +150

Units
V V V mA °C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RθJC RθJA

TA = 25°C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5401 625 5.0 83.3 200

Max
*MMBT5401 350 2.8 357

Units
mW mW/ °C °C/W °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

5 Cje=73. IB = 5. IC = 0 150 160 5. RS = 1.0 mA. VCE = 10 V. f = 1.3777 Vje=.0 kΩ. Duty Cycle ≤ 2.0 V V V V VCE(sat ) VBE( sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS fT Cobo NF Current Gain .5312 Vjc=. IE = 0 VCB = 120 V.0 V I C = 10 mA.5 1.75 Fc=. f = 100 MHz VCB = 10 V.0 MHz I C = 250 µA. TA = 100°C VEB = 3.0 1. IE = 0.0% Spice Model PNP (Is=21. IB = 5. VCE = 5. VCE = 5.48f Ikf=. VCE = 5.2N5401 / MMBT5401 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 1.0 mA I C = 10 mA.0 mA 50 60 50 240 0. VCE = 5.Bandwidth Product Output Capacitance Noise Figure I C = 10 mA.75 Tr=1.1 Ne=1.0 8.0 mA I C = 50 mA.63p Mjc=.1848 Xtb=1.0 50 50 50 V V V nA µA nA ON CHARACTERISTICS* hFE DC Current Gain I C = 1. f = 10 Hz to 15.5 Br=3.0 V I C = 10 mA.11 Vaf=100 Bf=132.0 V.0 MHz pF dB *Pulse Test: Pulse Width ≤ 300 µs.661 Nc=2 Isc=0 Ikr=0 Rc=1. IB = 0 I C = 100 µA. IB = 1. I C = 0 VCB = 120 V.0 mA. IB = 1. I E = 0 I E = 10 µA.0 mA I C = 50 mA.476n Tf=641.375 Ise=21.0 V I C = 50 mA.0 V.9p Itf=0 Vtf=0 Xtf=0 Rb=10) .39p Mje=.6 Cjc=17.2 0.7 kHz 100 300 6. IE = 0.48f Xti=3 Eg=1.

1 1 10 I C .2N5401 / MMBT5401 PNP General Purpose Amplifier (continued) Typical Characteristics vs Collector Current 200 V CESAT.1 1 10 100 1000 RESISTANCE (k Ω) .COLLECTOR CURRENT (mA) P 4 100 Collector-Cutoff Current vs Ambient Temperature I CBO.BASE-EMITTER ON VOLTAGE (V) VBESAT.1 I C .4 V CE = 5V 0.0001 0.1 1 0 0.8 .40 ºC 25 °C 0.2 0.6 125 ºC 0.2 125 ºC 25 °C 50 0.4 β = 10 0.1 .4 β = 10 V CE = 5V 150 125 °C 25 °C .1 25 50 75 100 125 T A .AMBIENT TEMPERATURE (ºC) P 4 150 BV CER .40 ºC 0.6 125 ºC 0.40 ºC 25 °C 0.1 IC 1 10 .COLLECTOR CURRENT (mA) P 74 100 h VBE(ON) .2 0.COLLECTOR-EMITTER VOLTAGE (V) Typical Pulsed Current Gain .001 0.TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.40 ºC FE 0 0.8 .COLLECTOR CURRENT (mA) P 4 100 0.3 100 0.BREAKDOWN VOLTAGE (V) Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 220 210 200 190 180 170 0.COLLECTOR CURRENT (nA) 100 V CB = 100V 10 1 0.BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 Base-Emitter ON Voltage vs Collector Current 1 0.01 0.COLLECTOR CURRENT (A) 1 10 I C .

0 MHz CAPACITANCE (pF) 60 Power Dissipation vs Ambient Temperature 700 PD .1 1 10 100 V R .2N5401 / MMBT5401 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Input and Output Capacitance vs Reverse Voltage f = 1.POWER DISSIPATION (mW) 600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 SOT-23 TO-92 80 40 C eb 20 C cb 0 0.REVERSE BIAS VOLTAGE(V) .

datasheetcatalog.com Datasheets for electronics components. .This datasheet has been download from: www.

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