DATA SHEET SHEET DATA

SILICON TRANSISTOR

2SC2954
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION
The 2SC2954 is an NPN epitaxial silicon transistor disigned for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV bnad.
PACKAGE DIMENSIONS
(Unit: mm)

FEATURES
• Low Noise and High Gain. NF: 2.3 dB, 2.4 dB
0.8 MIN.

4.5±0.1 1.6±0.2 1.5±0.1 

S21e: 20 dB, 12.5 dB
• Large PT in Small Package. PT: 2 W with 16 cm  0.7 mm Ceramic Substrate.
2

E
0.42 ±0.06

C

B

0.42±0.06 1.5 0.47 ±0.06 3.0 0.41 +0.05
−0.03

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Termal Resistance Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT * Rth(j-a)* 35 18 3.0 150 2.0 62.5 V V V mA W

Term, Connection E : Emitter C : Collector (Fin) B : Base (SOT-89) 

C/W Tj 150 C Tstg 65 to +150 C * With 16 cm2  0.7 mm
Ceramic Substrate

Document No. P10405EJ3V0DS00 (3rd edition) (Previous No. TC-1458A) Date Published March 1997 N Printed in Japan

©

4.0±0.25

2.5±0.1

f = 200 MHz, 500 MHz

1994

0 IC-Collector Current-mA 2. f = 1.8 MIN.0 200 COLLECTOR CURRENT vs. TYP. duty cycle 2 %/Pulsed TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs.4 4.1 1.2SC2954 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current DC Current Gain Gain Bandwidth Product Feedback Capacitance SYMBOL ICBO hFE fT Cre TEST CONDITIONS VCB = 10 V. IC = 30 mA. BASE TO EMITTER VOLTAGE VCE = 10 V 200 PT-Total Power Dissipation-W Ceramic Substrate 16 cm2 × 0. f = 500 MHz RG = 50  10 30 3. f = 500 MHz RG = 50  VCE = 10 V.7 mm Rth(j-a) 62. COLLECTOR CURRENT VCE = 10 V IC-Collector Current-mA hFE-DC Current Gain 10 2 mA 100 1. IC = 50 mA.5 °C/W 1. IC = 50 mA VCB = 10 V.0 100 Free Air Rth(j-a) 312. Emitter Grounded.0 100 4. MAX.0 1.5 VBE-Base to Emitter Voltage-V 1.5 mA 1 mA IB = 500 µ A 200 100 70 50 30 0 0 2 4 6 8 VCE-Collector to Emitter Voltage-V 20 10 1 10 100 200 IC-Collector Current-mA 2 .5 dB Noise Figure 2.0 dB *1 Pulse Measurement PW  350 s.0 MHz VCE = 10 V. IE = 0 VCE = 10 V. IC = 50 mA *1 VCE = 10 V. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. 100 200 UNIT nA  GHz pF Insertion Power Gain S21e2 NF 12.5 °C/W 0 0 50 100 Ta-Ambient Temperature-°C 150 0.

3 0.1 0 0.1 1.0 3.0 1.3 0.0 MHz fT-Gain Bandwidth Product-MHz 10 5.0 1.5 1.2 0.0 0.0 10 50 100 IC-Collector Current-mA 30 25 |S21e|2-Insertion Gain-dB 20 INSERTION GAIN vs.1 0.2 0.7 1.0 3 .0 3.0 GAIN BANDWIDTH PRODUCT vs.5 0.5 f-Frequency-GHz 0.5 0.0 FEED-BACK AND OUTPUT CAPACITANCE vs. COLLECTOR CURRENT VCE = 10 V Cob (Emitter Open) Cve (Emitter Graund) 0.2SC2954 10 Cre-Feed-back Capacitance-pF Cob-Output Capacitance-pF 5.0 5.2 0. COLLECTOR TO BASE VOLTAGE f = 1. COLLECTOR CURRENT VCE = 10 V f = 100 MHz 30 INSERTION GAIN vs. FREQYENCY VCE = 10 V IC = 50 mA 25 f = 200 MHz |S21e|2-Insertion Gain-dB 100 20 15 f = 500 MHz 10 5 0 f = 1 GHz 15 10 5 10 20 30 50 IC-Collector Current-mA 5 0 0.0 2.0 2.0 10 30 VCB-Collector to Base Voltage-V 5.3 0.

IM3 vs.0 −20 20 30 40 IC (mA) 50 60 70 0 0. ASSOCIATED GAIN vs. IC at VCE = 10 V V0 = 110 dBµV/75 Ω Rg = Re = 75 Ω 5 IM2 f = 90 + 100 MHz IM3 f = 2 × 200 − 190 MHz NF-Noise Figure-dB 4 −70 3 −60 IM3 2 −50 IM2 −40 1 −30 0.1 4 . FREQUENCY 6 VCE = 10 V IC = 30 mA RG = 50 Ω IM2 IM3 (dB) −80 2SC2945 IM2.2 0.2SC2954 18 15 Ga-Associated Gain-dB NF-Noise Figure-dB 6 5 4 3 2 1 0 NOISE FIGURE. COLLECTOR CURRENT VCE = 10 V f = 500 MHz RG = 50 Ω Ga 12 9 6 3 0 NF 1 2 3 5 7 10 20 IC-Collector Current-mA 30 50 70 100 NOISE FIGURE.5 f-Frequency-GHz 1.vs.3 0.

0 44 P .1 GHz 50 S11e REACTANCE COMPONENT R –––– 0.7 0.14 0.38 0. 5 07 43 0.37 0.5 0. 4 0. 0 13 1. 18 32 19 0.5 0.3 0.20 0° 30° 150° 30° 150° 180° −150° −30° −150° −120° −60° −90° −120° −90° CONDITION VCE = 10 V IC = 50 mA CONDITION VCE = 10 V IC = 50 mA 10 0.2 ZO ( ) 3.0 4.1 0.0 0.2 −90 0.49 0.3 −3 0.3 0.8 1.38 0.0 A N O I C T O EFFCIEN 0.0 CONDITION VCE = 10 V IC = 50 mA f = 0.7 0.49 0.3 7 3 0.0 0.4 1 GHz 0.1 14 0.1 6 0.2 0.7 1.2 0. 5 2.6 0.2 40 0.14 −80 1.4 L 0 4 E − .7 0.27 0.6 8 0.2 1 0.23 0.3 0.2 2 −20 0. 0 0.2 30 0. 0. 32 18 0.4 0.0 GHz 0.23 0. 0.25 0.13 0.15 0.3 4 00 6 1.6 0.36 80 0.2 8 0. −5 0 3 0.11 −100 0.4 1.4 1 0.3 7 0.3 4.0 0.13 0.2 1. GTHS 0 0. OS 0. 4 E IV AT 0.9 1.12 0.40 0.0 1 0.0 1.0 2 0.48 2 RD L 3 RA OAD 0.0 AV 0 5 W 15 0.39 0.2 0.40 110 0.26 2 0.01 0.2 10 0. 2.8 0.6 0.12 0.5 0.1 GHz 0.8 0.01 7 0.0 5.1 0 0.1 to 1. 4 0 0.1 20 50 0.9 1.0 6 0.0 E NC TA X – AC −J – RE ––ZO ) 0.1 −6 4 0. 100 MHz) S21e-FREQUENCY 90° 120° 0.6 0.4 5 50 0 −1 . 31 19 −30° −60° 5 .0 9 −1 2 0.4 0.4 0.25 0 0.1 GHz 0.4 0.2SC2954 S11e.11 0. 31 0.6 1.0 2 8 0 NE G −1 0.36 0.10 −11 0 0. EES EN 160 A 0.0 5.8 0.35 70 1.0 4 0 G T 4 EGR N G 0.0 50 0.6 3.6 0.6 1.2 0.05 0.02 TOWARD 0.4 6 0 06 40 ENT ITIV ON 0 ER 4 MP 0.0 5 0 0.4 20 1 0.1 0° 180° 0.0 10 15 20 60° 120° S12e-FREQUENCY 90° 60° 0.4 0.4 0.2 1.7 0.2 0.10 0.0 1. 2 9 0. 0 0. 8 S22e 5.26 0.4 0.35 0.0 3.1 GHz 0.0 0.3 ( 0.27 8 10 0.1 0.2 0 0 0 −4 0 0.2 9 0.9 1. 0 1 0.0 10 20 0.0 4. 0 6. 3 07 30 0.24 0.3 ( –Z–+–J–XTANCE CO ) MPO 0 C O WAVELE N 0 1.4 20 1.2 0.0 GHz (STEP.3 6 0.1 0.4 0. −1 EA CO 0.0TOR 3 HS TOWLE OF REFLEC T IN D 6 7 .48 0 0. S22e-FREQUENCY 0.8 2.8 0.37 90 0.2 20 0.8 1.6 1.0 GENE 0.24 −10 0.4 5 0.39 100 0.15 −70 0.8 1.2 9 0.15 0.2 0.4 0.8 0. N T EN 0.

2SC2954 [MEMO] 6 .

2SC2954 [MEMO] 7 .

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