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IRF840

Data Sheet January 2002

8A, 500V, 0.850 Ohm, N-Channel Power MOSFET


This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425.

Features
8A, 500V rDS(ON) = 0.850 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards

Ordering Information
PART NUMBER IRF840 NOTE: PACKAGE TO-220AB BRAND IRF840

Symbol
D

When ordering, include the entire part number.

Packaging
JEDEC TO-220AB TOP VIEW

SOURCE DRAIN GATE

DRAIN (FLANGE)

2002 Fairchild Semiconductor Corporation

IRF840 Rev. B

IRF840
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRF840 500 500 8.0 5.1 32 20 125 1.0 510 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.

NOTE: 1. TJ = 25oC to 125oC.

Electrical Specications
PARAMETER

TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs tD(ON) tr tD(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured from the Contact Screw on Tab to Center of Die Modified MOSFET Symbol Showing the Internal Devices Measured from the Drain Inductances D Lead, 6mm (0.25in) from Package to Center of Die LD Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad
G LS S

TEST CONDITIONS VGS = 0V, ID = 250A (Figure 10) VGS = VDS, ID = 250A VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX , VGS = 10V VGS = 20V VGS = 10V, ID = 4.4A (Figures 8, 9) VDS 50V, ID = 4.4A (Figure 12) VDD = 250V, ID 8A, RG = 9.1 , RL = 30 MOSFET Switching Times are Essentially Independent of Operating Temperature.

MIN 500 2.0 8.0 4.9 -

TYP 0.8 7.4 15 21 50 20 42 7.0 22 1225 200 85 3.5

MAX 4.0 25 250 100 0.85 21 35 74 30 63 -

UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH

Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero-Gate Voltage Drain Current

On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse-Transfer Capacitance Internal Drain Inductance

VGS = 10V, ID = 8A, VDS = 0.8 x Rated BVDSS Ig(REF) = 1.5mA (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

4.5

nH

Internal Source Inductance

LS

7.5

nH

Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient

RJC RJA Free Air Operation

1.0 62.5

oC/W oC/W

IRF840 Rev. B

IRF840
Source to Drain Diode Specications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D

MIN -

TYP -

MAX 8.0 32

UNITS A A

Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES:

VSD trr QRR

TJ = 25oC, ISD = 8.0A, VGS = 100A/s (Figure 13) TJ = 25oC, ISD = 8.0A, dISD/dt = 100A/s TJ = 25oC, ISD = 8.0A, dISD/dt = 100A/s

210 2.0

475 4.6

2.0 970 8.2

V ns C

2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 14mH, RG = 25 , peak IAS = 8A.

Typical Performance Curves


1.2 POWER DISSIPATION MULTIPLIER 1.0

Unless Otherwise Specied

10

0.8 0.6 0.4 0.2 0

ID , DRAIN CURRENT (A) 0 50 100 150

0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE

1 ZJC , NORMALIZED TRANSIENT 0.5 THERMAL IMPEDANCE 0.2 0.1 0.1 0.05 0.02 0.01 10-2 SINGLE PULSE PDM t1 t2 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-4 10-2 10-3 0.1 t1 , RECTANGULAR PULSE DURATION (s) 1 10

10-3 -5 10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

2002 Fairchild Semiconductor Corporation

IRF840 Rev. B

IRF840 Typical Performance Curves


102 10s ID, DRAIN CURRENT (A) 10 100s 1ms 1 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED SINGLE PULSE 1 10 102 ID , DRAIN CURRENT (A)

Unless Otherwise Specied

(Continued)
15 VGS = 10V 12

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 6.0V

9 VGS = 5.5V 6

10ms DC

VGS = 5.0V VGS = 4.5V VGS = 4.0V 200 250

0.1

103

0 0 50 100 150 VDS , DRAIN TO SOURCE VOLTAGE (V)

VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. OUTPUT CHARACTERISTICS

15

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

100 VGS = 10V ISD(ON), DRAIN TO SOURCE CURRENT (A)

ID , DRAIN CURRENT (A)

12 VGS = 6.0V

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V

10

1 TJ = 150oC 0.1 TJ = 25oC

VGS = 5.5V

3 VGS = 4.0V 0 0

VGS = 5.0V VGS = 4.5V

0.01 3 6 9 12 VDS , DRAIN TO SOURCE VOLTAGE (V) 15 0 2 4 6 8 VSD , GATE TO SOURCE VOLTAGE (V) 10

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

10

NORMALIZED DRAIN TO SOURCE ON RESISTANCE VOLTAGE

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

3.0

rDS(ON) , DRAIN TO SOURCE ON RESISTANCE ()

2.4

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID = 4.4A, VGS = 10V

6 VGS = 10V 4

1.8

1.2

VGS = 20V

0.6

0 0 8 16 24 32 TC , CASE TEMPERATURE (oC) 40

0 -60

-40

-20

20

40

60

80

100 120 140 160

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

IRF840 Rev. B

IRF840 Typical Performance Curves


1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A

Unless Otherwise Specied

(Continued)
3000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD

1.15 C, CAPACITANCE (pF)

2400

1.05

1800 CISS 1200 COSS 600 CRSS

0.95

0.85

0.75 -60

-40

-20

20

40

60

80

100 120 140 160

0 1 2 10 2 5 5 VDS , DRAIN TO SOURCE VOLTAGE (V)

102

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

15 gfs, TRANSCONDUCTANCE (S)

ISD, SOURCE TO DRAIN CURRENT (A)

12

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V

100 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 10 TJ = 150oC 1.0 TJ = 25oC

TJ = 25oC TJ = 150oC

0 0 3 6 9 ID , DRAIN CURRENT (A) 12 15

0.1

1.2 0.3 0.6 0.9 VSD , SOURCE TO DRAIN VOLTAGE (V)

1.5

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20 VGS , GATE TO SOURCE VOLTAGE (V) ID = 8A 16 VDS = 100V 12 VDS = 250V VDS = 400V

0 0 12 24 36 48 60 Qg, GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

2002 Fairchild Semiconductor Corporation

IRF840 Rev. B

IRF840 Test Circuits and Waveforms


VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD

0V

IAS 0.01

0 tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON td(ON) tr RL VDS


+

tOFF td(OFF) tf 90%

90%

RG DUT

VDD 0

10% 90%

10%

VGS VGS 0 10%

50% PULSE WIDTH

50%

FIGURE 17. SWITCHING TIME TEST CIRCUIT

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

CURRENT REGULATOR

VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS

12V BATTERY

0.2F

50k

0.3F

DUT 0

Ig(REF) 0 IG CURRENT SAMPLING RESISTOR

S VDS ID CURRENT SAMPLING RESISTOR Ig(REF) 0

FIGURE 19. GATE CHARGE TEST CIRCUIT

FIGURE 20. GATE CHARGE WAVEFORMS

IRF840 Rev. B

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Rev. H4

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