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Original Title: compact models for nanoowire transistors.pdf

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Landauer-Buttiker formalism

Electrodes: macroscopic reservoirs (L>>Lphi); experience inelastic scattering; thermalize and reach an equilibrium distribution function (Fermi distribution function) Channel (mesoscopic system): L<Lphi; no inelastic scattering along the channel, only elastic scattering with impurities occurs; intrinsically out of equilibrium, no equilibrium distribution function can be defined; Leads: widening contacts where no elastic nor inelastic scattering is assumed to occur.

In second quantization, the hamiltonian operator can be written

Equation to be solved

The general solution of this differential equation is

a's and b's are called amplitude operators. Introducing Energy instead of momentum k, and integrating over all energies range

Scattering formalism

Scattering matrix

Scattering matrix coefficients depend solely on the channel and are computed imposing boundary conditions to the differential equation.

Examples

Current operator

In second-quantized form

Where we can use the field operator we just found (usually we compute current in the leads)

Current calculation

To compute the current we average over many samples (canonical ensemble)

Where

and

Landauer-Buttiker formula

Finally one gets the Landauer-Buttiker formula for the current in the leads

Even if there are no impurities in the channel (T=1), a resistance arises anyway. It is related to the coupling of the mesoscopic (ballistic) system with the macroscopic contacts.

Self-consistent field

Source and drain are macroscopic contacts with fermi distribution functions f1(E) and f2(E).

When a voltage V is applied between source and drain

An energy level E inside the channel sees two different Charge flows: Source would like to fill it with electrons to see f1(E); Drain would like to empty it to see f2(E). Equilibrium is never reached. Current from the source Current from the drain

At steady-state

Part of the energy level spreads outside the energy range between the electrochemical Potentials where current flows. The current is then reduced by a factor

Considering the density of level D(E) inside the channel, with broadening becomes

To compute the current in presence of broadening, we have to integrate over all the Energy range

Potential profile

To inlcude the effect of gate voltage, potential inside the channel must be computed.

Iterative procedure

A simple comparison

From Landauer-Buttiker theory

Datta

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