Devices
and Circuits
Third Edition
SAMUEL Y. LlAO
Professor of Electrical Engineering
California State University, Fresno
B PRENTICE HALL, Englewood Cliffs, New Jersey 07632
Contents
Chapter 0
Chapter 1
Chapter 2
PREFACE
INTRODUCTION
01 Microwave Frequencies
02 Microwave Devices 2
03 Microwave Systems 3
04 Microwave Units of Measure 4
INTERACTIONS BETWEEN ELECTRONS AND FIELDS
10 Introduction 6
11 Electron Motion in an Electric Field 6
12 Electron Motion in a Magnetic Field 10
13 Electron Motion in an Electromagnetic Field 12
Suggested Readings 15
Problems 15
ELECTROMAGNETIC PLANE WAVES
20 Introduction 16
21 Electric and Magnetic Wave Equations 17
xv
1
6
16
v
vi Contents
22 Poynting Theorem 19
23 Unifonn Plane Waves and Reflection 21
231 Umform Plane Waves. 21
232 Boundary Conditions. 23
233 Uniform PlaneWave Reflection. 24
24 PlaneWave Propagation in Free Space and Lossless
Dielectric 29
241 PlaneWave Propagation in Free Space. 29
242 PlaneWave Propagation in Lossless Dielectric. 32
25 PlaneWave Propagation in Lossy Media 32
251 Plane Wave in Good Conductor. 33
252 Plane Wave in Poor Conductor. 35
253 Plane Wave in Lossy Dielectric. 36
26 PlaneWave Propagation in MetallicFilm Coating on Plastic
Substrate 41
261 Surface Resistance of Metallic Films. 42
262 Optical Constants of Plastic Substrates and Metallic Films. 42
263 Microwave Radiation Attenuation of MetallicFilm Coating on
Plastic Substrate. 44
264 Light Transmittance of MetallicFilm Coating on Plastic Sub
strate. 46
265 Plane Wave in GoldFilm Coating on Plastic Glass. 47
266 Plane Wave in SilverFilm or CopperFilm Coating on Plastic
Substrate. 52
References 57
Suggested Readings 57
Problems 58
Chapter 3 MICROWAVE TRANSMISSION LINES
30 Introduction 61
31 TransmissionLine Equations and Solutions 61
311 TransmissionLine Equations. 61
312 Solutions of TransmissionLine Equations. 64
32 Reflection Coefficient and Transmission Coefficient 67
321 Reflection Coefficient. 67
322 Transmission Coefficient. 69
33 Standing Wave and StandingWave Ratio 71
331 Standing Wave. 71
332 StandingWave Ratio. 74
34 Line Impedance and Admittance 76
341 Line Impedance. 76
342 Line Admittance. 81
61
Contents vii
35 Smith Chart 82
36 Impedance Matching 89
361 SingleStub Matching, 90
362 DoubleStub Matching, 92
37 Microwave Coaxial Connectors 96
References 98
Suggested Readings 98
Problems 98
Chapter 4 MICROWAVE WAVEGUIDES AND COMPONENTS 102
40 Introduction 102
41 Rectangular Waveguides 103
411 Solutions of Wave Equations in Rectangular Coordinates, 104
412 TE Modes in Rectangular Waveguides, 106
413 TM Modes in Rectangular Waveguides, 111
414 Power Transmission in Rectangular Waveguides, 113
415 Power Losses in Rectangular Waveguides, 113
416 Excitations of Modes in Rectangular Waveguides, 116
417 Characteristics of Standard Rectangular Waveguides, 117
42 Circular Waveguides 119
421 Solutions of Wave Equations in Cylindrical Coordinates, 119
422 TE Modes in Circular Waveguides, 122
423 TM Modes in Circular Waveguides, 127
424 TEM Modes in Circular Waveguides, 129
425 Power Transmission in Circular Waveguides or Coaxial
Lines, 131
426 Power Losses in Circular Waveguides or Coaxial Lines, 133
427 Excitations of Modes in Circular Waveguides, 133
428 Characteristics of Standard Circular Waveguides, 135
43 Microwave Cavities 135
431 RectangularCavity Resonator, 135
432 CircularCavity Resonator and SemicircularCavity Res
onator, 136
433 Q Factor of a Cavity Resonator, 139
44 Microwave Hybrid Circuits 141
441 Waveguide Tees, 144
442 Magic Tees (Hybrid Trees), 146
443 Hybrid Rings (RatRace Circuits), 147
444 Waveguide Corners, Bends, and Twists, 148
45 Directional Couplers 149
451 TwoHole Directional Couplers, 151
452 S Matrix of a Directional Coupler, 151
453 Hybrid Couplers, 154
viii
46 Circulators and Isolators 156
461 Microwave Circulators, 15R
462 Microwave Isolators, 160
References 161
Suggested Readings 161
Problems 161
Contents
Chapter 5
Chapter 6
MICROWAVE TRANSISTORS AND TUNNEL DIODES
50 Introduction 166
51 Microwave Bipolar Transistors 169
511 Physical Structures, 170
512 Bipolar Transistor Configurations, 173
513 Principles of Operation, 178
514 Amplification Phenomena, 187
515 PowerFrequency Limitations, 190
52 Heterojunction Bipolar Transistors (HBTs) 193
521 Physical Structures, 193
522 Operational Mechanism, 194
523 Electronic Applications, 197
53 Microwave Tunnel Diodes, 198
531 Principles of Operation, 198
532 Microwave Characteristics, 201
References 204
Suggested Readings 205
Problems 205
MICROWAVE FIELDEFFECT TRANSISTORS
60 Introduction 208
61 Junction FieldEffect Transistors (JFETs) 209
611 Physical Structure, 209
612 Principles of Operation, 210
613 CurrentVoltage (IV) Characteristics, 211
62 MetalSemiconductor FieldEffect Transistors
(MESFETs) 216
621 Physical Structures, 217
622 Principles of Operation, 218
623 SmallSignal Equivalent Circuit, 221
624 Drain Current h 223
625 Cutoff Frequency feo and Maximum Oscillation Frequency
fmax, 228
166
208
Contents ix
63 High Electron Mobility Transistors (HEMTs) 230
631 Physical Structure, 230
632 Operational Mechanism, 232
633 Performance Characteristics, 233
634 Electronic Applications, 236
64 MetalOxideSemiconductor FieldEffect Transistors
(MOSFETs) 237
641 Physical Structures, 237
642 Electronic Mechanism, 238
643 Modes of Operation, 238
644 Drain Current and Transconductance, 239
645 Maximum Operating Frequency, 243
646 Electronic Applications, 244
65 MOS Transistors and Memory Devices 245
651 NMOS Devices, 245
652 CMOS Devices, 248
653 Memory Devices, 252
66 ChargeCoupled Devices (CCDs) 254
661 Operational Mechanism, 255
662 SurfaceChannel ChargeCoupled Devices (SCCDs) , 258
663 Dynamic Characteristics, 259
References 261
Suggested Readings 262
Problems 263
Chapter 7 TRANSFERRED ELECTRON DEVICES (TEDs) 269
70 Introduction 269
71 GunnEffect DiodesGaAs Diode, 270
711 Background,270
712 Gunn Effect, 271
72 RidleyWatkinsHilsum (RWH) Theory 273
721 Differential Negative Resistance, 273
722 TwoValley Model Theory, 274
723 HighField Domain, 280
73 Modes of Operation 284
731 Criterion for Classifying the Modes of Operation, 285
732 Gunn Oscillation Modes (l0/2/cm2 :S (noL) < lO/4/cm
2
), 287
733 LimitedSpaceCharge Accumulation (LSA) Mode
(fl > 2 x 10
7
cm/s), 289
734 Stable Amplification Mode (noL < lO/2/cm2), 290
74 LSA Diodes 291
75 InP Diodes 293
x
76 CdTe Diodes 296
Contents
Chapter 8
77 Microwave Generation and Amplification 296
771 Microwave Generation, 296
772 Microwave Amplification, 298
References 300
Suggested Readings 301
Problems 302
AVALANCHE TRANSIT TIME DEVICES
80 Introduction 303
81 Read Diode 304
811 Physical Description, 304
812 Avalanche Multiplication, 305
813 Carrier Current l
o
(t) and External Current 1
e
(t), 306
814 Output Power and Quality Factor Q, 308
82 IMPATI Diodes 309
821 Physical Structures, 309
822 Negative Resistance, 309
823 Power Output and Efficiency, 311
83 TRAPATT Diodes 314
831 Physical Structures, 314
832 Principles of Operation, 314
833 Power Output and Efficiency, 316
303
84 BARITT Diodes 317
841 Physical Description, 317
842 Principles of Operation, 317
843 Microwave Performance, 319
85 Parametric Devices 320
851 Physical Structures, 320
852 Nonlinear Reactance and ManleyRowe Power Relations, 321
853 Parametric Amplifiers, 326
854 Applications, 330
References 331
Suggested Readings 332
Problems 333
Chapter 9 MICROWAVE LINEARBEAM TUBES (0 TYPE) 335
90 Introduction 335
91 Conventional Vacuum Triodes, Tetrodes, and Pentodes 338
911 LeadInductance and 1nterelectrodeCapacitance Effects, 338
Contents
xi
912 TransitAngle Effects, 339
913 GainBandwidth Product Limitation, 340
92 Klystrons 341
921 Reentrant Cavities, 342
922 VelocityModulation Process, 345
923 Bunching Process
924 Output Power and Beam Loading, 354
925 State of the Art, 360
93 Multicavity Klystron Amplifiers 362
931 BeamCurrent Density, 363
932 Output Current and Output Power of TwoCavity Klystron,
369
933 Output Power of FourCavity Klystron, 371
94 Reflex Klystrons 373
941 Velocity Modulation 374
942 Power Output and Efficiency, 376
943 Electronic Admittance, 379
95 Helix TravelingWave Tubes (TWTs) 382
951 SlowWave Structures, 384
952 Amplification Process, 388
953 Convection Current, 391
954 Axial Electric Field, 392
955 Wave Modes, 394
956 Gain Consideration, 396
96 CoupledCavity TravelingWave Tubes 398
961 Physical Description, 398
962 Principles of Operation, 400
963 Microwave Characteristics, 402
97 HighPower and GriddedControl TravelingWave Tubes 404
971 High Efficiency and Collector Voltage Depression, 406
972 Normal Depression and Overdepression of Collector Voltage,
407
973 TwoStage Collector Voltage Depression Technique, 410
974 Stabilization of Cathode and Collector Voltages, 412
References 417
Suggested Readings 418
Problems 419
Chapter 10
MICROWAVE CROSSEDFIELD TUBES (M TYPE)
100 Introduction 425
101 Magnetron Oscillators 427
1011 Cylindrical Magnetron, 427
1012 Linear Magnetron, 436
425
xii Contents
1013 Coaxial Magnetron, 442
1014 VoltageTunable Magnetron. 443
1015 Inverted Coaxial Magnetron, 444
1016 FrequencyAgile Coaxial Magnetron. 447
102 ForwardWave CrossedField Amplifier (FWCFA OR
CFA) 450
1021 Principles of Operation. 450
1022 Microwave Characteristics 455
103 BackwardWave CrossedField Amplifier (Amplitron) 457
104 BackwardWave CrossedField Oscillator
(Carcinotron) 461
References 466
Problems 467
Chapter 11
Chapter 12
STRIP LINES
110 Introduction 472
111 Microstrip Lines 473
1111 Characteristic Impedance of Microstrip Lines, 473
1112 Losses in Microstrip Lines 477
1113 Quality Factor Q of Microstrip Lines 484
112 Parallel Strip Lines 485
1121 Distributed Parameters 486
1122 Characteristic Impedance 486
1123 Attenuation Losses 487
113 Coplanar Strip Lines 488
114 Shielded Strip Lines 489
References 491
Problems 492
MONOLITHIC MICROWAVE INTEGRATED CIRCUITS
120 Introduction 495
121 Materials 497
1211 Substrate Materials 498
1212 Conductor Materials 498
1213 Dielectric Materials 500
1214 Resistive Materials 500
122 Monolithic Microwave IntegratedCircuit Growth 501
1221 MMIC Fabrication Techniques. 502
1222 Fabrication Example. 504
472
495

Contents
123 MOSFET Fabrication 504
1231 MOSFET Formation, 505
1232 NMOS Growth, 506
1233 CMOS Development, 508
1234 Memory Construction, 510
xiii
124 ThinFilm Formation 514
1241 Planar Resistor Film 514
1242 Planar Inductor Film 516
1243 Planar Capacitor Film 518
125 Hybrid IntegratedCircuit Fabrication 519
References 521
Suggested Readings 522
Problems 522
APPENDIX A
APPENDIX B
INDEX
523
529
535
Preface
This third revision has been designed, as have the first two editions, for use in a first
course in microwave devices and circuits at the senior or beginning graduate level in
electrical engineering. The objectives of this book are to present the basic principles,
characteristics, and applications of commonly used microwave devices and to ex
plain the techniques for designing microwave circuits. It is assumed that readers of
this text have had previous courses in electromagnetics and solidstate electronics.
Because this book is selfcontained to a large extent, it also serves as a convenient
reference for electronics engineers working in the microwave field.
The format of this edition remains the same, but there are additions and expan
sions as well as some corrections and deletions. The problems section has been en
larged and includes new and very practical problems. The book is reorganized into
twelve chapters.
Chapter I discusses the interactions between electrons and fields.
Chapter 2 deals with planewave propagation in different media.
Chapter 3 treats transmission lines.
Chapter 4 analyzes microwave waveguides and components.
Chapter 5 describes microwave transistors and tunnel diodes, and includes het
erojunction bipolar transistors (HBTs).
Chapter 6 treats microwave fieldeffect transistors such as JFETs, MESFETs,
HEMTs, MOSFETs and the NMOS, CMOS, and the chargedcoupled devices
(CCDs).
Chapter 7 discusses transferred electron devices (TEDs), including the Gunn,
LSA, InP, and CdTe diodes.
Chapter 8 describes avalanche transittime devices such as the IMPATT,
TRAPATT, and BARITT diodes and the parametric devices.
xv
xvi Preface
Chapter 9 deals with microwave linearbeam tubes including klystrons, reflex
klystron, and travelingwave tubes (TWTs).
Chapter 10 studies microwave crossedfield tubes such as magnetrons, for
wardwave crossedfield amplifiers, and the backwardwave crossedfield am
plifiersAmplitron and Carcinotron.
Chapter II explains strip lines including microstrip, parallel, coplanar, and
shielded strip lines.
Chapter 12 analyzes monolithic microwave integrated circuits (MMICs) in
cluding MMIC growth, MOSFET fabrication, thinfilm formation, and hybrid inte
gratedcircuit fabrication.
The arrangement of topics is flexible; an instructor may conveniently select or
order the several topics to suit either a onesemester or a onequarter course. Numer
ous problems for each chapter establish the reader's further understanding of the
subjects discussed. Instructors who have adopted the book for their courses may ob
tain a solutions manual from the publisher.
The author is grateful to the several anonymous reviewers; their many valuable
comments and constructive suggestions helped to improve this edition. The author
would also like to acknowledge his appreciation to the many instructors and students
who used the first two editions and who have offered comments and suggestions. All
of this help was vital in improving this revision, and this continuing group effort is
sincerely invited. Finally, I wish to express my deep appreciation to my wife, Lucia
Hsiao Chuang Lee, and our children: Grace in bioengineering, Kathy in electrical
engineering, Gary in electronics engineering, and Jeannie in teachers education, for
their valuable collective contributions. Therefore, this revision is dedicated to them.
Samuel Y. Liao
I
Chapter 0
Introduction
The central theme of this book concerns the basic principles and applications of mi
crowave devices and circuits. Microwave techniques have been increasingly adopted
in such diverse applications as radio astronomy, longdistance communications,
space navigation, radar systems, medical equipment, and missile electronic systems.
As a result of the accelerating rate of growth of microwave technology in research
and industry, students who are preparing themselves for, and electronics engineers
who are working in, the microwave area are faced with the need to understand the
theoretical and experimental design and analysis of microwave devices and circuits.
0·1 MICROWAVE FREQUENCIES
The term microwave frequencies is generally used for those wavelengths measured in
centimeters, roughly from 30 cm to 1 mm (l to 300 GHz). However, microwave re
ally indicates the wavelengths in the micron ranges. This means microwave frequen
cies are up to infrared and visiblelight regions. In this revision, microwave frequen
cies refer to those from I GHz up to 10
6
GHz. The microwave band designation that
derived from World War II radar security considerations has never been officially
sanctioned by any industrial, professional, or government organization. In August
1969 the United States Department of Defense, Office of Joint Chiefs of Staff, by
message to all services, directed the use of a new frequency band breakdown as
shown in Table 01. On May 24, 1970, the Department of Defense adopted another
band designation for microwave frequencies as listed in Table 02. The Institute of
Electrical and Electronics Engineers (IEEE) recommended new microwave band
designations as shown in Table 03 for comparison.
1
2 Introduction
TABLE 0·1 U.S. MILITARY MICROWAVE BANDS
Chap. 0
Designation
P band
L band
S band
C band
X band
K band
Qband
V band
W band
Frequency range in gigahertz
0.225 0.390
0.390 1.550
1.550 3.900
3.900 6.200
6.200 10.900
10.900 36.000
36.000 46.000
46.000 56.000
56.000100.000
TABLE 0·2 U.S. NEW MILITARY MICROWAVE BANDS
Designation
A band
B band
C band
D band
E band
F band
G band
Frequency range in gigahertz
0.1000.250
0.2500.500
0.5001.000
1.0002.000
2.0003.000
3.0004.000
4.0006.000
Designation
H band
I band
J band
K band
L band
M band
Frequency range in gigahertz
6.000 8.000
8.000 10.000
10.000 20.000
20.000 40.000
40.000 60.000
60.000100.000
TABLE 0·3 IEEE MICROWAVE FREQUENCY BANDS
Designation
HF
VHF
UHF
L band
S band
C band
X band
Ku band
K band
Ka band
Millimeter
Submillimeter
Frequency range in gigahertz
0.003 0.030
0.030 0.300
0.300 1.000
1.000 2.000
2.000 4.000
4.000 8.000
8.000 12.000
12.000 18.000
18.000 27.000
27.000 40.000
40.000300.000
>300.000
0·2 MICROWAVE DEVICES
In the late 1930s it became evident that as the wavelength approached the physical
dimensions of the vacuum tubes, the electron transit angle, interelectrode capaci
tance, and lead inductance appeared to limit the operation of vacuum tubes in mi
crowave frequencies. In 1935 A. A. Heil and O. Heil suggested that microwave
voltages be generated by using transittime effects together with lumped tuned cir
Sec. 0.3 Microwave Systems 3
cuits. In 1939 W. C. Hahn and G.F. Metcalf proposed a theory of velocity modula
tion for microwave tubes. Four months later R. H. Varian and S. F. Varian described
a twocavity klystron amplifier and oscillator by using velocity modulation. In 1944
R. Kompfner invented the helixtype travelingwave tube (TWT). Ever since then the
concept of microwave tubes has deviated from that of conventional vacuum tubes as
a result of the application of new principles in the amplification and generation of
microwave energy.
Historically microwave generation and amplification were accomplished by
means of velocitymodulation theory. In the past two decades, however, microwave
solidstate devicessuch as tunnel diodes, Gunn diodes, transferred electron
devices (TEDs), and avalanche transittime devices have been developed to perform
these functions. The conception and subsequent development of TEDs and avalanche
transittime devices were among the outstanding technical achievements. B. K. Rid
ley and T. B. Watkins in 1961 and C. Hilsum in 1962 independently predicted that
the transferred electron effect would occur in GaAs (gallium arsenide). In 1963 J. B.
Gunn reported his "Gunn effect." The common characteristic of all microwave solid
state devices is the negative resistance that can be used for microwave oscillation and
amplification. The progress of TEDs and avalanche transittime devices has been so
swift that today they are firmly established as one of the most important classes of
microwave solidstate devices.
03 MICROWAVE SYSTEMS
A microwave system normally consists of a transmitter subsystem, including a mi
crowave oscillator, waveguides, and a transmitting antenna, and a receiver subsys
tem that includes a receiving antenna, transmission line or waveguide, a microwave
amplifier, and a receiver. Figure 01 shows a typical microwave system.
In order to design a microwave system and conduct a proper test of it, an ade
quate knowledge of the components involved is essential. Besides microwave
devices, the text therefore describes microwave components, such as resonators, cav
ities, microstrip lines, hybrids, and microwave integrated circuits.
Microwave
source
Transmitting Receiving
horn antenna horn antenna
Figure 01 Microwave system.
Crystal
mount
4
0·4 MICROWAVE UNITS OF MEASURE
Introduction Chap. 0
Microwave measures can be expressed in different units, such as the CGS (centime
tergramsecond) unit, MKS (meterkilogramsecond) unit, or another unit. The
meterkilogramsecond units (the International System of Units) are used throughout
unless otherwise indicated. Table 04 lists the most commonly used MKS units.
The prefixes tabulated in Table 05 are those recommended by the Interna
TABLE 0·4 MKS UNITS
Quantity
Capacitance
Charge
Conductance
Current
Energy
Field
Flux linkage
Frequency
Inductance
Length
Power
Resistance
Time
Velocity
Voltage
Unit
farad = coulomb per volt
coulomb: A  s
mhos
ampere = coulomb per second
joule
volt per meter
weber = volt· second
cycle per second
henry = (V  s)/A
meter
watt = joule per second
ohm
second
meter per second
volt
Symbol
F
Q
u
A
J
E
t/1
Hz
H
m
W
n
v
V
Note: I tesla = I weber/m
2
= 10
4
gausses = 3 x 10
6
ESU
I A(angstrom) = 10
10
m
I J.lm (micron) = 10
6
m
TABLE 0·5 PREFIXES
Prefix Factor Symbol
exa 10
18
E
peta
lOIS
P
tera 10
12
T
giga 10" G
mega 10
6
M
kilo 10
3
k
hecto 10
2
h
deka 10 da
deci
10
1
d
centi
10
2
c
milli
10
3
m
micro
10
6
J.I
nano 10"
n
pico
10
12
p
femto
IO
IS
f
atto
10
18
a
Sec. 0.4 Microwave Units of Measure
5
tional Committee on Weights and Measures. They have been adopted by the Na
tional Bureau of Standards and are used by the Institute of Electrical and Electronics
Engineers, Inc.
The physical constants commonly used in the text are listed in Table 06.
The temperature scales commonly used in scientific work, engineering design,
and everyday life are shown in Table 07. Many engineering computations use the
absolute temperature in degrees Kelvin, and therefore a temperature conversion is
necessary to convert the temperatures from either centigrade or Fahrenheit to Kelvin
scale.
TABLE 0·6 PHYSICAL CONSTANTS
Constant
Boltzmann constant
Electronvolt
Electron charge
Electron mass
Ratio of charge to mass of an electron
Permeability of free space
Permittivity of free space
Planck's constant
Velocity of light in vacuum
TABLE 0·7 TEMPERATURE SCALES
Symbol
k
eV
q
m
elm
fJ..o
1:0
h
c
Value
1.381 X 1 O ~ 2 3 WK
1.602 x 10
19
J
1.602 X 10
19
C
9.109 X 10
31
kg
1.759 X 1011 Clkg
1.257 x 1 O ~ 6 Him or 47T x 10
7
Him
8.854 x 10
12
F/m
6.626 x 10
34
J . s
2.998 X 10
8
mls
Rankine
oR
Boiling point 671.4°
Ambient point 540°
Ice point 491.4°
Absolute lero
Fahrenheit
of
80.6°
Centigrade
°c
100°
27°
273°
Kelvin
oK
373°
300°
273°
Chapter 1
Interactions Between
Electrons and Fields
1q.!NTRODUCTION
In this chapter we are concerned with electronfield interactions. The motion of the
electron beam is assumed to be in a uniform electric field, or a uniform magnetic
field, or a uniform electromagnetic field because the inhomogeneous differential
equations governing the motion of an electron beam in a field involve three dimen
sions and their solutions in a nonuniform field are, in most cases, extremely difficult
to obtain and usually cannot be determined exactly. On the other hand, fortunately,
all present microwave devices employ a uniform field for the electronfield interac
tions.
Our primary purpose here is to provide the reader with a background for un
derstanding the electronfield interactions in microwave devices that will be dis
cussed in later chapters.
11 ELECTRON MOTION IN AN ELECTRIC FIELD
In describing fields and electronfield interactions, certain experimental laws of elec
tricity and magnetism are covered first. The fundamental force law of charges is
Coulomb's law, which states that between two charges there exists either an attrac
tive or a repulsive force, depending on whether the charges are of opposite or like
sign. That is,
6
newtons (111)
Sec. 1.1 Electron Motion in an Electric Field 7
where Q = charge in coulombs
I
Eo = 8.854 X 10
12
= 367T X 10
9
Flm is the permittivity of free space
R = range between the charges in meters
U = unit vector
It should be noted that since the MKS system is used throughout this text, a factor of
47T appears in the preceding equation.
The electric field intensity produced by the charges is defined as the force per
unit chargethat is,
F Q
E == Q = 47TE
o
R
2
UR
If there are n charges, the electric field becomes
n Qm
E = 2: 2 UR
m
m=147TE
O
R
m
Vim (112)
(113)
In order to determine the path of an electron in an electric field, the force must be
related to the mass and acceleration of the electron by Newton's second law of mo
tion. So
dv
F = eE = rna = m
dt
(114)
where m = 9.109 X 10
31
kg, mass of electron
a = acceleration in meters per second squared
v = velocity of electron in meters per second
e = 1.602 X 10
19
C, charge of electron that is negative
It can be seen that the force is in the opposite direction of the field because the elec
tron has a negative charge. Thus when an electron moves in an electric field E, it ex
periences a force eE newtons. The differential equations of motion for an electron
in an electric field in rectangular coordinates are given by
d
2
x e
(IISa) = Ex
dt
2
m
d
2
y e
(I15b)
E
dt
2
m y
d
2
z e
(I15c)
= E
dt
2
m Z
where elm = 1.759 X 1011 Clkg is the ratio of charge to mass of electron and Ex,
E
y
, E
z
are the components of E in rectangular coordinates.
In many cases, the equations of motion for electrons in an electric field in
cylindrical coordinates are useful. The cylindrical coordinates (r, cP, z) are defined
as in Fig. 111.
It can be seen that
8 Interactions Between Electrons and Fields
z
u4>
u
r
~    I     .  y
Chap. 1
x
x = r cos cf>
y = r sin cf>
z = z
Figure 111 Cylindrical coordinates.
(l16a)
(l16b)
(l16c)
and, conversely,
r = (x
2
+ y2)1/2
A,. t  1 (y) _ . I Y _ I X
'f' = an ~  sm (x 2 + y2)1/2  cos (x 2 + y2)1/2
z = z
(l17a)
(l17b)
(l17c)
A system of unit vectors, Ur, U</>, U
z
, in the directions of increasing r, cf>, z, respec
tively, is also shown in the same diagram. While U
z
is constant, U
r
and U</> are func
tions of cf>; that is,
U
r
= cos cf> U
x
+ sin cf> U
y
u</> = sin cf> U
x
+ cos cf> u
y
Differentiation of Eqs. (l18) with respect to cf> yields
dU
r
=u</>
dcf>
(l18a)
(l18b)
(l19a)
(l19b)
du</>
dcf> = Ur
The position vector p can be expressed in cylindrical coordinates in the form
p = rU
r
+ ZU
z
(l19c)
(l11O)
Differentiation of Eq. (l19c) with respect to t once for velocity and twice for ac
celeration yields
dp dr dU
r
dz dr dcf> dUr
dz
v =  = u + r + u = u + r .  + u
dt dt r dt dt z dt r dt dcf> dt z
dr dcf> dz
= Ur + ru</> + U
z
dt dt dt
Sec. 1.1 Electron Motion in an Electric Field 9
(1111)
a = dv = [d
2
r _ r(dcf»2JU + (r d
2
cf> + 2 dr dcf»U.p + d
2
z U
z
dt dt
2
dt r dt
2
dt dt dt
2
= [d
2
r _ r(dcf»2JUr + .!.!!. (
r
2d
cf»u.p + d
2
z U
Z
dt
2
dt r dt dt dt
2
Therefore the equations of motion for electrons in an electric field in cylindrical co
ordinates are given by
(1112a)
(1112b)
(1112c)
where En E.p, and E
z
are the components of E in cylindrical coordinates.
From Eq. (114) the work done by the field in carrying a unit positive charge
from point A to point B is
rE . de = ; fS v dv (1113)
A VA
However, by definition, the potential V of point B with respect to point A is the
work done against the field in carrying a unit positive charge from A to B. That is,
V ==  f8 E . de (1114)
A
Substitution of Eg. (1114) in Eq. (1113) and integration of the resultant yield
1
eV = 2" m ( v ~  vl) (1115)
The left side of Eq. (1115) is the potential energy, and the right side represents the
change in kinetic energy. The unit of work or energy is called the electron volt (eV),
which means that if an electron falls through a potential of one volt, its kinetic
energy will increase 1 eV. That is,
1 eV = (1.60 X 10
19
C)(1V) = 1.60 X 10
19
J (1116)
(1117)
mls
If an electron starts from rest and is accelerated through a potential rise of V volts,
its final velocity is
(
2 eV)I/2
v = ;;; = 0.593 X 10
6
VV
Since de is the increment of distance in the direction of an electric field E, the
change in potential dV over the distance de can be expressed as
Idvi = Ede
(1118)
10
In vector notation it is
Interactions Between Electrons and Fields
E = VV
Chap. 1
(1119)
where the symbol V is the vector operator in three coordinate systems. The minus
sign implies that the field is directed from regions of higher potential to those of
lower potential. Equation (1119) is valid in regions in which there is space charge
as well as in regions that are free of charge.
12 ELECTRON MOTION IN A MAGNETIC FIELD
A charged particle in motion in a magnetic field of flux density B is experimentally
found to experience a force that is directly proportional to the charge Q, its velocity
v, the flux density B, and the sine of the angle between the vectors v and B. The
direction of the force is perpendicular to the plane of both v and B. Therefore the
force exerted on the charged particle by the magnetic field can be expressed in vec
tor form as
F = Qvx B
Since the electron has negative charge, then
F = ev X B
(121)
(122)
The motion equations of an electron in a magnetic field in rectangular coordinates
can be written
d
2
x
!'(Bz
dY
_ B dZ)
(I23a)
dt
2
m dt Y dt
d
2
y
_!. (Bx dz _ B
z
dX)
(I23b)
dt
2
m dt dt
d
2
z
_!. ( Bdx _ B d
Y
)
(I23c)
dt
2
m Y dt xdt
Since
(124)
the equations of motion for electrons in magnetic field for cylindrical coordinates
can be given by
(I 25a)
(I25b)
(I25c)
Sec. 1.2 Electron Motion in a Magnetic Field 11
x
=0:..L. ..lo.. !_ Y
Figure 121 Circular motion of an
electron in a transverse magnetic field.
Consider next an electron moving with a velocity of V
x
to enter a constant uni
form magnetic field that is perpendicular to V
x
as shown in Fig. 121. The velocity
of the electron is assumed to be
(126)
where U
x
is a unit vector in the x direction.
Since the force exerted on the electron by the magnetic field is normal to the
motion at every instant, no work is done on the electron and its velocity remains
constant. The magnetic field is assumed to be
(127)
Then the magnetic force at the instant when the electron just enters the magnetic
field is given by
F = ev X B = evBu
y
(I 28)
This means that the force remains constant in magnitude but changes the direction
of motion because the electron is pulled by the magnetic force in a circular path.
This type of magnetic force is analogous to the problem of a mass tied to a rope and
twirled around with constant velocity. The force in the rope remains constant in
magnitude and is always directed toward the center of the circle and thus is perpen
dicular to the motion. At any point on the circle the outward centrifugal force is
equal to the pulling force. That is,
mv
2
 = evB
R
where R is the radius of the circle.
From Eq. (128) the radius of the path is given by
(129)
R = mv
eB
meters (I 210)
rad/s
The cyclotron angular frequency of the circular motion of the electron is
v eB
w ==
R m
(1211)
12 Interactions Between Electrons and Fields Chap. 1
seconds
The period for one complete revolution is expressed by
21T 21Tm
T==
w eB
(1212)
It should be noted that the radius of the path is directly proportional to the velocity
of the electron but that the angular frequency and the period are independent of ve
locity or radius. This means that fastermoving electrons or particles traverse larger
circles in the same time that a slowermoving particle moves in a smaller circle.
This very important result is the operating basis of such microwave devices as
magneticfocusing apparatus.
1·3 ELECTRON MOTION IN AN ELECTROMAGNETIC FIELD
If both electric and magnetic fields exist simultaneously, the motion of the electrons
depends on the orientation of the two fields. If the two fields are in the same or in
opposite directions, the magnetic field exerts no force on the electron, and the elec
tron motion depends only on the electric field, which has been described in Section
11. Linearbeam tubes (0 type devices) use a magnetic field whose axis coincides
with that of the electron beam to hold the beam together as it travels the length of
the tube. In these tubes the electrons receive the full potential energy of the electric
field but are not influenced by the magnetic field.
When the electric field E and the magnetic flux density B are at right angle to
each other, a magnetic force is exerted on the electron beam. This type of field is
called a crossed field. In a crossedfield tube (Mtype device), electrons emitted by
the cathode are accelerated by the electric field and gain velocity; but the greater
their velocity, the more their path is bent by the magnetic field. The Lorentz force
acting on an electron because of the presence of both the electric field E and the
magnetic flux B is given by
dv
F =  e(E + v x B) = m
dt
(131)
The equations of motion for electrons in a crossed field are expressed in rectangular
coordinates and cylindrical coordinates, respectively, as
d
2
x = _!... (Ex + B
z
dy _ B dZ) (132a)
dt
2
m dt Y dt
d
2
y = _!... (Ev + B
x
dz _ B
z
dX) (132b)
dt
2
m· dt dt
d
2
z !...(E + B dx _ B d
Y
) (132c)
dt
2
m z Y dt x dt
d
2
r _ r(dcf»2 = _!... (Er + Bzr dcf> _ Bq, dZ) (133a)
dt
2
dt m dt dt
Sec. 1.3
where
Electron Motion in an Electromagnetic Field 13
(l33b)
(l33c)
dc/J e
 = w" =B
dt m
is the cyclotron frequency
a.
b.
It is, of course, difficult to solve these equations for solutions in three dimensions. In
microwave devices and circuits, however, only one dimension is involved in most
cases. So the equations of motion become simple and can easily be solved. An ex
ample may show how to solve some of the preceding equations.
Example 131: Electron Motion in an Electromagnetic Field
The inner cylinder of radius a is the cathode and the outer shell with radius b is the
anode. A dc voltage V
o
is applied between the anode and cathode, and a magnetic flux
density B is into the page as shown in Fig. 131. The problem is to adjust the applied
voltage V
o
and the magnetic flux density B to such levels that the electrons emitted
from the cathode will just graze the anode and travel in space between the cathode and
the anode only.
Anode
v= V
o
Figure 131 Electron motion in an
electromagnetic field.
Solution
1. Write the equations of motion for electrons in cylindrical coordinates.
d
2
r _r(dcf»2 = +!.Er!.rdcf>Bz
dt
2
dt m m dt
~ ~ ( r 2 d c f » = !'B
z
dr
r dt dt m dt
2. From (b)
14 Interactions Between Electrons and Fields Chap. 1
3. Application of the boundary conditions: At r = a,
dcP = 0
dt
I 2
constant = "2 wca
Hence
dcP I
r2di = "2 wc(r
2
 a
2
)
4. The magnetic field does no work on the electrons:
I
mv
2
= eV
2
2e (dr)
2
(d
cP
)2
v
2
=  V = v
2
+ v ~ =  + r
m r dt dt
5. For grazing the anode,
V = V
o
r = b
dr
= 0
dt
b
2
(d
cP
)2 = 2e V
o
and b
2
dcP = ~ W (b
2
 a2)
dt m dt 2 c
b
2
Gw
c
(1  ::)r = ~ V o
6. The cutoff voltage is
(133d)
(134)
This means that if V
o
< V
Oc
for a given R
o
, the electrons will not reach the anode. Con
versely, the cutoff magnetic field can be expressed in terms of Vo:
(8V
o
mje)I/2
ROc = b(1  a
2
/b
2
)
This implies that if R
o
> ROc for a given Vo, the electrons will not reach the anode.
SUGGESTED READINGS
GEWAIUOWSKI, J. W., and H. A. WATSON, Principles of Electron Tubes. D. Van Nostrand
Company, Princeton, N.J., 1965.
Problems 15
KRAUS, J. D., and K. R. CARVER, Electromagnetics, 3rd ed. McGrawHill Book Company,
New York, 1984.
SKlTEK, G. G., and S. V. MARSHALL, Electromagnetic Concepts and Applications. Prentice
Hall, Inc., Englewood Cliffs, N.J., 1982.
PROBLEMS
II. At time t = to an electron is emitted from a planar diode with zero initial velocity and
the anode voltage is +15 V. At time t = tl the electron is midway between the plates
and the anode voltage changes discontinuously to  30 V.
a. Determine which electrode the electron will strike.
b. Compute the kinetic energy of the electron in electronvolts (eV) when it strikes the
electrode.
12. A circular cavity is constructed of a center conductor and an outer conductor. The in
ner center conductor has a radius of I cm and is grounded. The outer conductor has a
radius of 10 cm and is connected to a power supply of +10 kV. The electrons are emit
ted from the cathode at the center conductor and move toward the anode at the outer
conductor.
a. Determine the magnetic flux density B in webers per square meter in the axial di
rection so that the electrons just graze the anode and return to the cathode again.
b. If the magnetic flux density B is fixed at 4 mWb/m
2
, find the required supply
voltage so that the electrons just graze the anode and return to the cathode again.
Chapter 2
Electromagnetic Plane
Waves
2·0 INTRODUCTION
Since Maxwell's fundamental concepts of electromagnetic wave theory have been
established, the electric and magnetic wave equations can readily be derived from
Faraday's electromotive force law, Ampere's circuital law, and Gauss's law for the
electric and magnetic fields. In Chapter I interactions between electron and field
were discussed. Here electromagnetic plane waves are described in detail. Many
topics associated with electromagnetic waves, such as Poynting theory, reflection
theory, attenuation concepts, and planewave propagation in metallicfilm coating on
plastic substrates, are also analyzed, for these basic principles are used frequently in
later chapters.
The principles of electromagnetic plane waves are based on the relationships
between electricity and magnetism. A changing magnetic field will induce an elec
tric field, and a changing electric field will induce a magnetic field. Also, the in
duced fields are not confined but ordinarily extend outward into space. The sinu
soidal form of the wave causes energy to be interchanged between the magnetic and
electric fields in the direction of the wave propagation.
A plane wave has a plane front, a cylindrical wave has a cylindrical front, and
a spherical wave has a spherical front. The front of a wave is sometimes referred to
as an equiphase surface. In the far field of free space, electric and magnetic waves
are always perpendicular to each other, and both are normal to the direction of prop
agation of the wave. This type of wave is known as the transverse electromagnetic
(TEM) wave. If only the transverse electric wave exists, the wave is called TEmode
wave. That means there is no component of the electric wave in the direction of
propagation. In TM modes only the transverse magnetic wave exists.
16
Sec. 2.1 Electric and Magnetic Wave Equations 17
2·1 ELECTRIC AND MAGNETIC WAVE EQUATIONS
The electric and magnetic wave equations can be basically derived from Maxwell's
equations, which in time domain are expressed as
VXE=
aB
at
(211)
aD
VXH=J+
at
V·D = pv
V' B = 0
where the vector operator V is expressed by
(212)
(213)
(214)
a a a
V = u + u +u
ax x ay Y az Z
(cartesian) (214a)
(214c)
(214b)
a a a
V = Ur + U", + U
z
(cylindrical)
ar ract> az
a a 1 a
V =  U +  U8 +  u... (spherical)
ar r rao rsin0 act> 'I'
It should be noted that boldface roman letters indicate vector quantities or complex
quantities. The units of these field variables are
E = electric field intensity in volts per meter
H = magnetic field intensity in amperes per meter
D = electric flux density in coulombs per square meter
B = magnetic flux density in webers per square meter or in tesla
(l tesla = 1 weber/m
2
= 10
4
gausses = 3 x 10
6
ESU)
J = electric current density in amperes per square meter
pv = electric charge density in coulombs per cubic meter
The electric current density includes two componentsthat is,
J = Jc + Jo
(215)
where Jc = (T E is called the conduction current density
Jo = the impressed current density, which is independent of the field
The current density source Jo may really be a current prescribed by an external
agency, but more often it is simply one which we know from measurements before
we start to find the fields. Alternatively, Jo is often the current on a surface or in a
region [1]. In most cases, however, the current density source Jo may not exist.
18 Electromagnetic Plane Waves Chap. 2
In addition to Maxwell's four equations, the characteristics of the medium in
which the fields exist are needed to specify the flux in terms of the fields in a specific
medium. These constitutive relationships are
D = EE (216)
B = /LH (217)
Jc = O"E (218)
E = ErEo (219)
/L = /Lr/LO (2110)
where E = dielectric permittivity or capacitivity of the medium in farads per meter
E
r
= relative dielectric constant (dimensionless)
Eo = 8.854 X 10
12
= 1/(367r) X 10
9
F/m is the dielectric permittivity of
vacuum or free space
/L = magnetic permeability or inductivity of the medium in henrys per meter
/Lr = the relative permeability or relative inductivity (dimensionless)
/Lo = 477" X 10
7
Him is the permeability of vacuum or free space
0" = conductivity of the medium in mhos per meter
If a sinusoidal time function in the form of e
jwt
is assumed, ajat can be re
placed by jw. Then Maxwell's equations in frequency domain are given by
v x E =  jW/LH
V x H = (0" + jWE)E
V· D = pv
V' B = 0
Taking the curl of Eq. (2111) on both sides yields
V x V x E =  jW/LV x H
Substitution of Eq. (2112) for the righthand side of Eq. (2115) gives
V x V x E =  jW/L(O" + jWE)E
(2111)
(2112)
(2113)
(2114)
(2115)
(2116)
The vector identity for the curl of the curl of a vector quantity E is expressed as
V x V x E =  V
2
E + V(V· E) (2117)
In free space the spacecharge density is zero, and in a perfect conductor time
varying or static fields do not exist. So
V·D = pv = 0 (2118)
V·E = 0 (2119)
Substitution of Eq. (2117) for the lefthand side of Eq. (2116) and replacement
of Eq. (2119) yield the electric wave equation as
V
2
E = y
2
E (2120)
Sec. 2.2 Poynting Theorem 19
where'}' = Vjwp., (0" + jW€) = a + j{3 is called the intrinsic propagation
constant of a medium
a = attenuation constant in nepers per meter
{3 = phase constant in radians per meter
Similarly, the magnetic wave equation is given by
V
2
H = '}'2H (2121)
It should be noted that the "double del" or "del squared" is a scalar operatorthat
is,
vv = V
2
(2122)
which is a secondorder operator in three different coordinate systems. In rectangu
lar (cartesian) coordinates,
(2123)
In cylindrical (circular) coordinates,
V
2
=
r ar ar
(2124)
In spherical coordinates,
V
2
= 1 + _1_ + 1 (2124a)
r
2
ar aT r
2
sin 0 ao ao r
2
sin
2
0 acjJ2
Also, the solutions of Eqs. (211) and (212) solved simultaneously yield the elec
tric and magnetic wave equations in the time domain as
2·2 POYNTING THEOREM
aE a
2
E
V
2
E = p.,O"ai +p.,€ at2
aH a
2
H
V
2
H = p.,0" + p.,€
at at
2
(2125)
(2126)
At what rate will electromagnetic energy be transmitted through free space or any
medium, be stored in the electric and magnetic fields, and be dissipated as heat?
From the standpoint of complex power in terms of the complex field vectors, the
time average of any two complex vectors is equal to the real part of the product of
one complex vector multiplied by the complex conjugate of the other vector. Hence
the time average of the instantaneous Poynting vector in steady state is given by
(P) = (E x H) = x H*) (221)
where the notation ( ) stands for the average and the factor of 1/2 appears in the
20 Electromagnetic Plane Waves Chap. 2
equation for complex power when peak values are used for the complex quantities E
and H. Re represents the real part of the complex power, and the asterisk indicates
the complex conjugate.
It is necessary to define a complex Poynting vector as
P = HE X H*) (222)
Maxwell's equations in frequency domain for the electric and magnetic fields are
V X E =  jwp,H (223)
V X H = J + jw€E (224)
Dot multiplication of Eq. (223) by H* and of the conjugate of Eq. (224) by E
yields
(V X E) . H* =  jwp, H . H*
(V X H*) . E = (J*  jW€ E*) . E
(225)
(226)
Then subtraction of Eq. (225) from Eq. (226) results in
E· (V X H*)  H*· (V X E) = E· J*  jw(€IEI2  p,1 H 1
2
) (227)
where E . E* is replaced by 1 E 1
2
and H . H* by 1 H 1
2
•
The lefthand side of Eq. (22 7) is equal to  V . (E X H*) by the vector
identity. So
V . (E X H*) =  E . J* + jw (€I E 1
2
 p,1 H 1
2
)
Substituting Eqs. (215) and (222) into Eq. (228), we have
!E . H = !O'E . E* + jw(!p,H . H*  !€E . E*) + V . P
(228)
(229)
Integration of Eq. (229) over a volume and application of Gauss's theorem to the
last term on the righthand side give
f!(E . H)dv = f!0'1E1
2
dv + j2w f(wm  we)dv + ~ P' ds (2210)
where ! 0'1 E 1
2
= 0' <I E 1
2
) is the timeaverage dissipated power
ip,H . H* = tp, <I H 1)2 = W
m
is the timeaverage magnetic stored energy
i€E . E* = ! €<I E 1
2
) = We is the timeaverage electric stored energy
 ! E . J~ = the complex power impressed by the source Jo into the field
Equation (2 210) is well known as the complex Poynting theorem or the Poynting
theorem in frequency domain.
Furthermore, let
Pin =  J! (E . J ~ ) d v be the total complex power suplied by a source
c within a region
<P
d ) = J!O'I EI
2
dv be the timeaverage power dissipated as heat inside
c the region
Sec. 2.3 Uniform Plane Waves and Reflection 21
be the complex power transmitted from the region
be the difference between timeaverage magnetic
and electric energies stored within the region
(W
m
 lVe) = f(w
m
 we)dv
"
Ptr=f
P
'
dS
The complex Poynting theorem shown in Eq. (2210) can be simplified to
(2211)
This theorem states that the total complex power fed into a volume is equal to the
algebraic sum of the active power dissipated as heat, plus the reactive power propor
tional to the difference between timeaverage magnetic and electric energies stored
in the volume, plus the complex power transmitted across the surface enclosed by
the volume.
2·3 UNIFORM PLANE WAVES AND REFLECTION
2·3·1 Uniform Plane Waves
A plane wave is a wave whose phase is constant over a set of planes. A uniform
plane wave is a wave whose magnitude and phase are both constant. A spherical
wave in free space is a uniform plane wave as observed at a far distance. Its equi
phase surfaces are concentric spheres, expanding as the wave travels outward from
the source, and its magnitude is constant.
Electromagnetic waves in free space are typical uniform plane waves. The
electric and magnetic fields are mutually perpendicular to each other and to the di
rection of propagation of the waves. The phases of the two fields are always in time
phase and their magnitudes are always constant. The stored energies are equally di
vided between the two fields, and the energy flow is transmitted by the two fields in
the direction of propagation. Thus a uniform plane wave is a transverse electromag
netic wave or a TEM wave.
A nonuniform plane wave is a wave whose amplitude (not phase) may vary
within a plane normal to the direction of propagation. Consequently, the electric and
magnetic fields are no longer in time phase.
Since a uniform plane wave of electric or magnetic field has no variation of in
tensity in a plane normal to the direction of propagation of the wave, then
aE = aE = 0 or aH = aH = 0
ax ay ax ay
if the direction of propagation is assumed in the positive z direction.
With the preceding assumptions and lossless dielectricthat is, (J' = Othe
wave equations (2125) and (2126) in time domain for the electric and magnetic
intensities in free space for rectangular coordinates reduce to
a 2 ~ x a 2 ~ x
az2 = JLo€o at
2
(231)
22 Electromagnetic Plane Waves Chap. 2
(232)
in which the electric intensity is arbitrarily chosen in the x direction and the mag
netic intensity in the y direction. With no loss in generality, it can be assumed that
the electric intensity is given by
Ex = E
o
ei (wt{3Z) = E
o
eiw{t({3/w)Z}
(233)
The magnetic intensity can be obtained by inserting Eq. (233) into the curl equa
tion
v x E =  jWJLoH
For the assumed conditions, the curl equation reduces to
aE
x
. H
a; =  JWJLo y
(234)
(235)
Differentiation of Eq. (233) with respect to z and substitution of the result in Eq.
(235) yield
H
y
= ~ Ex
V::O
where !!.. = ~ = 1 is accounted for in the derivation
W vp
v
p
= ~ = 3 X 10
8
mls is phase velocity
JLoEo
= c, the velocity of light in vacuum
a=O
f3 = W ~ is phase constant
The ratio of electric to magnetic intensities is given by
Ex {i:o
 = 1/0 =  = 377 n
Hy Eo
(236)
(237)
It is called the intrinsic impedance of free space.
Figure 231 shows uniform electric and magnetic plane waves in rectangular
coordinates. In general, for a uniform plane wave propagating in a lossless dielectric
medium (a = 0), the characteristics of wave propagation would become
a=O
f3 = wV;;;;
1/= { i ; = ~
~
1 c
v ==
p V;;;; v;,
(238a)
(238b)
(238c)
(238d)
Sec. 2.3 Uniform Plane Waves and Reflection
z
~ ~      y
x
Figure 231 Uniform plane waves
traveling in the z direction.
23
2·3·2 Boundary Conditions
Since Maxwell's equations are in the form of differential rather than algebraic equa
tions, boundary conditions must be applied to a given problem if a specific solution
is required.
There are four basic rules for boundary conditions at the surface between two
different materials:
1. The tangential components of electric field intensity are continuous across the
boundary.
2. The normal components of electric flux density are discontinuous at the
boundary by an amount equal to the surfacecharge density on the boundary.
3. The tangential components of magnetic field intensity are discontinuous at the
boundary by an amount equal to the surfacecurrent density on the boundary.
4. The normal components of magnetic flux density are continuous across the
boundary.
The four statements can be proved by applying Faraday's law, Gauss's law,
Ampere's law, and V . B = 0 to the boundaries of Fig. 232(a) and (b).
It can be seen from the diagrams that
fE . di = Ell Ai  E
t2
Ai = 0
I
fD . ds = D
nl
As  D
n2
As = ps As
s
fH . di = H
Il
Ai  H
t2
Ai = J
s
Ai
I
fBods = B
nl
As  B
n2
As = 0
24
Medium I Medium 2
Electromagnetic Plane Waves
Medium I Medium 2
Chap. 2
(a) (b)
Figure 232 Boundary conditions. (a)
Electric intensity. (b) Magnetic intensity.
So the boundary equations are
E'l = Ea
Dnl = Dn2 + ps
H'l = Ha + is
(239a)
(239b)
(239c)
(239d)
If medium 2 is a perfect conductor (0' = 00, E
r
= 1, J,Lr = 1) and medium 1 is a per
fect dielectric (vacuum or free space, 0' = 0, Eo, J,Lo), then
D'l
En =  = 0
Eo
(2310a)
Dnl = EoEnl = ps
H
n
= 0
Bnl = 0
if is = 0
(23lOb)
(2310c)
(23lOd)
2·3·3 Uniform Plane·Wave Reflection
Normalincidence reflection. The simplest reflection problem is that of a
uniform plane wave normally incident on a plane boundary between two dielectric
media with no surfacecharge density and surfacecurrent density. This situation is
shown in Fig. 233.
In medium I the fields are the sum of an incident wave plus a reflected wave,
respectively.
Ei
ll
= E
o
(e
j
{3J
z
+ fe
j
{3JZ)
H ~ I l = Eo (e
j
{3I
Z
_ fe
j
{3JZ)
T/J
where f31 = W ~
~
l T/o ... . d f d' 1
T/l =  = ~ r = mtrmsIc wave Impe ance 0 me mm
EI v Erl
f = reflection coefficient
(2311)
(2312)
Sec. 2.3 Uniform Plane Waves and Reflection
y
25
Medium 1
Incident wave
..
Reflected wave
Medium 2
Transmitted wave
..,.a;.:..... z
x x
In medium 2 there are transmitted waves:
= Eo Te
j
{32
z
= Eo Tej{32z
Tl2
Figure 233 Uniform planewave
reflection.
(2313)
(2314)
where f32 = WV;;;;
Tl2 = r; = .. = intrinsic wave impedance of medium 2
V E
r
2
T = transmission coefficient
For continuity of wave impedance at the boundary, the wave impedance is
I 1 + r Efl I
Zz = H(t) = TIl 1 _ r = H(21 = 7'/2
y z=o y z=o
(2315)
(2316)
Hence the reflection coefficient is given by
r = 7'/2  7'/1
Tl2 + TIl
From the boundary condition the tangential components of electric field intensity
are continuous across the interface. Then
Iz=o = Eo(I + f) = Iz=o = Eo T
Hence the transmission coefficient is expressed as
(2317)
T = 1 + r = 27'/2 (2318)
Tl2 + TIl
If medium 1 is lossless dielectric (that is, (T = 0), the standingwave ratio is defined
as
1 + r
SWR = p = I I = 1  r
(2319)
26 Electromagnetic Plane Waves Chap. 2
The power density transmitted across the boundary is
1 I £5
ptr = 2(E X H*) . U
l
=(1
l=O 2T/1
 [2)
(2320)
Then
plr = Pine( 1  [2) (2321)
where pine is the incident power density.
The incident power density minus the transmitted power density would yield
the reflected power density as
(2322)
Obliqueincidence reflection.
E Is in the Plane of Incidence. The plane of incidence is defined by the di
rection of propagation and the line normal to the boundary. The linearly polarized
uniform plane waves with E lying in and H normal to the plane of incidence are im
pinging obliquely on a boundary between two lossless dielectric materials as shown
in Fig. 234.
Whenever a wave is incident obliquely on the boundary surface between two
media, the polarization of the wave is vertical or horizontal if the electric field is
normal to or parallel to the boundary surface. The terms horizontal and vertical po
larization refer to the phenomenon of waves from horizontal and vertical antennas,
respectively, producing the corresponding orientations of wave polarization when
Normal
Rcllectcd wave
I3
x
=l3
r
sin Or
t
I3
l
= I3
r
cos er I er 13,
Incident wave
I3
x
= 13; sin 0;
  ~
o· Il3
z
= 13; cos 0i
'I
::::,y::,y::" ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ .. x
€2 Boundary
J.l.2
°2
Transmitted wave
z
Figure 234 Reflection and transmission of oblique incidence.
Sec. 2.3 Uniform Plane Waves and Reflection 27
the waves strike the surface of the earth. For guided waves in waveguides, the terms
transverse electric (TE) and transverse magnetic (TM) are used to designate the fact
that either the electric or the magnetic field is normal to the direction of propaga
tion. The polarization of a wave is an extremely useful concept for computing elec
tromagnetic power flow. For example, a Poynting vector indicates that the power
flow density is the cross product of an electric and a magnetic field with the specific
direction determined by the polarizations of the two fields.
As Fig. 234 shows, for a lossless dielectric medium, the phase constants (or
propagation constants) of the two media in the x direction on the interface are equal
as required by the continuity of tangential E and H on the boundary. Thus
f3j sin OJ = f3r sin Or
f3j sin OJ = f3, sin 0,
(2323a)
(2323b)
From Eq. (2323a), since f3j = f3r = f31' the angle of reflection is equal to the an
gle of incidence. This is
(2324)
(2325)
From Eq. (2323b)
sinO, = f3; = V2 = ~ J L I E I
sin OJ f3, VI JL2E2
where V represents the phase velocity. This is well known as Snell's law. In general,
all lowloss dielectrics have equal permeabilitythat is, JLI = JL2 = JLo. If medium
2 is free space and medium 1 is a nonmagnetic dielectric, the righthand side of Eq.
(2325) becomes V;;:, which is called the index of refraction of the dielectric.
The components of electric intensity E are
The components of magnetic intensity Hare
H
x
= 0
H
y
= Eo ejf3,(xsin6i+ZCos6i)
7/1
Hz = 0
The wave impedance in the z direction is given by
Ex
Z ==7/cosO
Z H
y
(2326)
(2327)
(2328)
(2329)
(2330)
(2331)
(2332)
It should be noted that the subscripts of 7/ and 0 have dropped because the wave
impedances of the two regions in the z direction are the same.
The wave impedance can be expressed in terms of the reflection coefficient of
28 Electromagnetic Plane Waves Chap. 2
the normal components at the boundary z = o. In medium I
(2333)
(2336)
(2337)
H ~ l ) = Eo [eJI31zCOS8;  feJl31zcOs8r] (2334)
'111
E ~ I ) I I + f
Zz = H ~ I ) z=o = '111 cos 0; I _ f (2335)
The impedance must be equal to the zdirected wave impedance in region 2 at the
boundary. Substitution of Zz = '112 cos 0, in Eq. (2335) yields
f = '112 cos 0,  '111 cos 0;
'112 cos 0, + '111 cos 0;
Then the transmission coefficient is given by
2'112 cos 0,
T = '
'112 cos 0, + '111 cos 0,
The preceding two equations are known as Fresnel's formulas for E in the plane of
incidence.
H Is in the Plane of Incidence. If H is in the plane of incidence, the com
ponents of Hare
H
x
= H
o
cos O;eJ131 (xsin8;+zcos8i)
Hz = H
o
sin O;eJ131 (xsin8;+zcos8
i
)
(2338)
(2339)
(2340)
The components of electric intensity E normal to the plane of incidence are
Ex = 0
E
z
= 0
(2341)
(2342)
(2343)
(2344)
The wave impedance in the z direction is given by
Ey '11
Zz =   =  = '11 sec 0
H
x
cos 0
It should be noted that the subscripts of '11 and 0 have been dropped for the same rea
son stated previously.
Fresnel's formulas for H in the plane of incidence are
f = '112 sec 0,  '111 sec 0;
'112 sec 0, + '111 sec 0;
T = 2'112 sec 0,
'112 sec 0, + '111 sec 0;
(2345)
(2346)
Sec. 2.4 PlaneWave Propagation in Free Space and Lossless Dielectric 29
24 PLANEWAVE PROPAGATION IN FREE SPACE
AND LOSSLESS DIELECTRIC
241 PlaneWave Propagation In Free Space
The electromagnetic wave being propagated in free space near the surface of the
earth is divided into two parts: the ground wave and the sky wave or ionosphere
wave. The ground wave is further divided into a direct wave, an earthreflected
wave, and a surface wave. Figure 241 shows the wave components of electromag
netic wave from a nondirectional antenna to a receiving station.
Transmitting " ' ~ . . . . L  _  .....+::::::=lt Receiving
antenna antenna
Earth
Figure 241 Wave components near
the surface of the earth.
The ionosphere is that region of the earth's atmosphere in which the con
stituent gases are ionized by solar radiation. This region extends from about 50 km
above the earth to several earth radii and has different layers designated as C, 0, E,
and F layers in order of height. The electrondensity distribution of each layer varies
with the time of day, season, year, and the geographical location. During the day
the electron density N is approximately 10
12
electrons per cubic meter at an altitude
between 90 and 1000 km. The E and F layers have a permanent existence, but the 0
layer is present only during the day. The electron density determines the reflection
and refraction of microwaves. For vertical incidence, the critical frequency is given
by
Fer = 9YNmax
Hz (241)
This means that a microwave of frequency Fer will be reflected back to the earth if
the electron density is equal to or higher than the required maximum electron den
sity N
max
(electrons per cubic meter).
The sky wave reaches the receiving station after reflection from the iono
sphere. Although important in many communication systems, the sky wave need not
be considered in most microwave applications because a wavelength shorter than
about 4 m will not return to the earth from the ionosphere. The reflected wave is
reflected from the earth in such a way as to reach the receiver. Energy radiated from
the nondirectional antenna of Fig. 241 strikes the earth at all points between the
base of the antenna and the horizon, but only that wave which leaves the antenna in
the direction shown reaches the receiver. The surface wave is a wave diffracted
30
Electromagnetic Plane Waves Chap. 2
around the surface of the earth or guided by the groundair interface. This compo
nent is important at broadcast frequencies; at microwave frequencies, however, the
surface wave is rapidly attenuated, and at a distance of 2 km from the antenna it has
an amplitude of only a fraction of I % of the direct wave. This component must be
considered in blindlanding systems in which ranges of less than 2 km are important.
The direct wave travels a nearly straight path from the transmitting antenna to the re
ceiving station. It is the only wave considered in this book. The termfree space will
be used to denote vacuum or any other medium having essentially the same charac
teristics as vacuum, such as open air, anechoic chamber, and shielded enclosure.
When power radiates from the transmitting antenna, the power density carried by
the spherical wave will decrease with distance as the energy in the wave spreads out
over an everincreasing surface area as the wave progresses.
The power density is given by
(242)
where PI = transmitting power in watts
gl = transmitting antenna gain (numerical)
R = distance between antenna and field point in meters
The power received by the receiving antenna is given as
(243) watts
pr = pdAe=
,\2 S:S:. •
where A
e
=  gr = ellecttve antenna aperture m square meters
47T
,\2 .. .
 = A
a
= IsotropIC antenna aperture m square meters
47T
gr = receiving antenna gain (numerical)
Figure 242 shows the relationships of electromagnetic energy transmission in free
space between two antennas.
Transmitting R+ Receiving
antenna '\ 7 '\ 7 antenna
Transmitter Receiver
G
r
G
r


Figure 242 Electromagnetic energy
transmission between two antennas.
If the received power is expressed in terms of decibels, Eq. (243) becomes
P
r
= P, + G, + G
r
 20 log (4:R) dBW (244)
where PI is in dBW, G, and G
r
are in decibels (dB). The term 20 log (47TR/,\) is well
known as the freespace attenuation in decibels. It can easily be found from the stan
Sec. 2.4 PlaneWave Propagation in Free Space and Lossless Dielectric 31
dard nomograph shown in Fig. 243. For example, if the wavelength of a signal is
0.03 m and the range is 20 m, the freespace attenuation is about 79 dB.
It should be noted that the freespace attenuation is entirely different from the
dissipative attenuation of a medium such as atmosphere that absorbs energy from the
wave. The factor (47TR
2
) in Eq. (243) simply accounts for the fact that the power
density is inversely proportionally decreasing with the squared distance when the en
ergy spreads out over free space. The factor (A
2
/ 47T) is the isotropic aperture of a re
ceiving antenna. It does not imply that a higherfrequency wave decreases in magni
tude more rapidly than a lowerfrequency wave. It is simply a consequence of the
fact that, for a given antenna gain, the aperture of a higherfrequency antenna is
smaller than that of a lowerfrequency antenna so that it intercepts a smaller amount
of power from the wave.
f
300
200
100
SO
40
30
20
10
5
4
3
70
2
;;;
60
,......
E
N
3 :r:
S
.:;,
l:
;., '5
.g
so
u
""
'" l:
l:
::>
'"
'"
l:
::> .;
2
0
>
'" 0.5 '"
<
....
~
40
"'"' 0.4
0.3
Figure 243 Nomograph of freespace attentuation.
10,000
5000
4000
3000
2000
1000
500
400
300
200
100
SO
40
30
,......
.:=
~
'"
20
"" l:
'"
10
32 Electromagnetic Plane Waves Chap. 2
2·4·2 Plane·Wave Propagation in Lossless Dielectric
The lossless dielectric, which is often called the good or perfect dielectric, is charac
terized by a = O. Hence the intrinsic impedance for a lossless dielectric can be ex
pressed in terms of air. This is
11 = !i!:. = ~ /Lo = 377 ohms (245)
' i ~ ErEo ~
The attenuation constant a is zero, and the phase constant f3 is given by
f3 = w ~
The phase velocity is expressed by
1
V P = ~
2·5 PLANE·WAVE PROPAGATION IN LOSSY MEDIA
(246)
(247)
(251)
(252)
The lossy media are characterized by a * O. There are three types of lossy media:
good conductor, poor conductor, and lossy dielectric, which are discussed in this
section. The presence of a loss in the medium introduces wave dispersion by con
ductivity. Dispersion makes a general solution in the time domain impossible except
by Fourier expansion methods. Thus only solutions for the frequency domain (or
steady state) will be given.
The electric and magnetic wave equations in the frequency domain as shown in
Eqs. (2120) and (2121) are repeated here:
V
2
E = jW/L(a + jWE)E
V
2
H = jW/L(a + jWE)H
For one dimension in the positive z direction, they become
a
2
E
i =jw/L(a + jWE)E
x
az
a
2
H
v
• ( ')H
az
2
= JW/L a + JWE y
The complexfrequency solutions would be given by
Ex = Eoe
az
cos (wt  f3z)
Eo
H
v
= _e
az
cos (wt  f3z)
11
where y = Vjw/L(a + jWE) = a + jf3
11 = r;;:;;:
' i ~
(253a)
(253b)
(254)
(255)
Sec. 2.5 PlaneWave Propagation in Lossy Media 33
2·5·1 Plane Wave in Good Conductor
A good conductor is defined as one having a very high conductivity; consequently,
the conduction current is much larger than the displacement current. The energy
transmitted by the wave traveling through the medium will decrease continuously as
the wave propagates because ohmic losses are present. Expressed mathematically, a
good conductor requires the criterion
The propagation constant y is expressed as
y = YjWfL(CI + jWE) = jwV;;; _ j CI
WE
= jwV;;;  j CI for 1
WE WE
." ;" r. ." ;(1 . 1)
=J V WfLCI V  J = J V WfLCI   J
V2 V2
= (l + j) Y7T'ffLCI
Hence
a = f3 = Y7T'ffLCI
(256)
(257)
(258)
The exponential factor e
az
of the traveling wave becomes e
1
= 0.368 when
1
z = :==
Y7T'ffLCI
This distance is called the skin depth and is denoted by
5 = 1 1
Y7T'ffLCI a f3
(259)
(2510)
Interestingly, at microwave frequencies the skin depth is extremely short and a piece
of glass with an evaporated silver coating 5.40fLm thick is an excellent conductor at
these frequencies. Table 251 lists the conductivities of materials.
The intrinsic impedance of a good conductor is given as
__
TJ = for CI WE
CI + JWE CI
r:;; /45
0
= (l + j) r:;; (2511)
= (1 + j) = (1 + j)Rs
in which R
s
= YWfL/(2CI) is known as the skin effect and the magnitude of the con
34
TABLE 2·5·1 TABLE OF CONDUCTIVITIES
Electromagnetic Plane Waves Chap. 2
Substance
Quartz, fused
Ceresin, wax
Sulfur
Mica
Paraffin
Rubber, hard
Glass
Bakelite
Distilled water
Seawater
Tellurium
Carbon
Graphite
Cast iron
Mercury
Nichrome
Constantan
Silicon steel
German silver
Lead
Tin
Phosphor bronze
Brass
Zinc
Tungsten
Duralumin
Aluminum, harddrawn
Gold
Copper
Silver
Conductivity (T
Type (mhos/m)
insulator
10\7
approx.
insulator
10
17
approx.
insulator
10
15
approx.
insulator
10
15
approx.
insulator
10
15
approx.
insulator
10
15
approx.
insulator
10
12
approx.
insulator
10
9
approx.
insulator
10
4
approx.
conductor 4 approx.
conductor 5 x 10
2
approx.
conductor 3 x 10
4
approx.
conductor 10
5
approx.
conductor 10
6
approx.
conductor 10
6
conductor 10
6
conductor 2 x
10
6
conductor 2
x
10
6
conductor 3
x
10
6
conductor 5 X
10
6
conductor 9
x 10
6
conductor 10
7
conductor 1.1 x 10
7
conductor 1.7 x 10
7
conductor 1.8 x 10
7
conductor 3
x
10
7
conductor 3.5 x 10
7
conductor 4.1 x 10
7
conductor 5.8 x 10
7
conductor 6.1 x 10
7
ductor surface resistance. The average power density for a good conductor is given
by
p = ~ I H I 2 R s
and the phase velocity within a good conductor is
v = wi)
(2512)
(2513a)
The reflectivity and transmittance of a good conductor in vertical and horizontal po
larizations are usually measured in terms of the grazing angle. The grazing angle «/J
is defined as the angle between the incident ray and the media boundary.
Vertical polarization. From Fig. 234 it can be seen that «/J = 90°  Oi;
then sin «/J = cos Oi, sin 0; = cos «/J, sin
2
0, + cos
2
0, = 1, and VI sin 0, = V2 sin OJ.
The vertical reflectivity of a good conductor for the tangential components of elec
tric intensity as shown in Eg. (2336) is simplified to
Sec. 2.5 PlaneWave Propagation in Lossy Media 35
(2513b)
(2513c)
(2513e)
f
v
= 1]2[1  (vdvl COS l/J)2]1/2  1]1 sin l/J
1]2[1  (vdvi cos l/J)2]1/2 + 1]1 sin l/J
For vertical polarization, the normal components of the electric fields are generally
used to determine the reflection coefficient. From Fig. 234 it can be seen that the
vertical components of the incident and reflected electric fields are in opposite direc
tions. Therefore the reflectivity of a good conductor in vertical polarization is
f v = 1]1 sin l/J  1]2[ 1  (vdVI cos l/J)2]1/2
1]1 sin l/J + 1]2[1  (V2/VI cos l/J)2]1/2
Similarly, the vertical transmittance of a good conductor for electric fields as shown
in Eq. (2337) is given by
21]2[1  (V2/VI cos l/J)2]1/2
T,  (2513d)
v  1]2[ 1  (V2/ VI cos l/J)2]1/2 + 1]1 sin l/J
Horizontal polarization. The reflectivity of a good conductor for electric
fields in horizontal polarization as shown in Eq. (2345) is simplified in terms of l/J
as
f
h
= 1]2 sin l/J[l  (V2/VI cos l/J)2]1/2  1]1
1]2 sin l/J [1  (vdVI cos l/J)2]1/2 + 1]1
Similarly, the transmittance of a good conductor for electric fields in horizontal po
larization as shown in Eq. (2346) can be expressed as
T
h
= 21]2[1  (V2/
V
I cos l/J)2]1/2 (2513f)
1]2 sin l/J[l  (vdvi cos l/J)2r
l
/
2
+ 1]1
In Fig. 234 it is assumed that medium 1 is free space or air and that medium 2 is
copper; then
1]1 = 377 n 1]2 = (I + j) r;:;;;,
\jt;
VI = 3 X 10
8
m/s V2 = w5 = {2;;;
\ j ~
The conductivity (T of copper is 5.8 x 10
7
mhos/m and its relative permeability is
unity. The magnitudes of reflectivity of copper for vertical and horizontal polariza
tions are computed by Eqs. (2513c) and (2513e) against the grazing angle l/J of 0
to 90° at a frequency range of 0.1 to 40 GHz. This result indicates that copper is a
perfect reflector for electromagnetic waves.
2·5·2 Plane Wave in Poor Conductor
Some conducting materials with low conductivity normally cannot be considered
either good conductors or good dielectrics. Seawater is a good example. It has a con
ductivity of 4 mhos/m and a dielectric constant of 20. At some low frequencies the
36 Electromagnetic Plane Waves Chap. 2
conduction current is greater than the displacement current, whereas at some high
frequencies the reverse is true.
In general, the propagation constant and intrinsic impedance for a poor con
ductor are given by
(2514)
(2515)
(2516)
2·5·3 Plane Wave in Lossy Dielectric
All dielectric materials have some conductivity, but the conductivity is very small
(a ltHo). When the conductivity cannot be neglected, the electric and magnetic
fields in the dielectric are no longer in time phase. This fact can be seen from the
intrinsic impedance of the dielectric as
_ _ . a)1/2
'Y/  .   1)
a + JWE E WE
The term a /(WE) is referred to as the loss tangent and is defined by
a
tan () = 
WE
(2517)
This relationship is the result of displacement current density leading conduction
current density by 90°, just as the current flowing through a capacitor leads the cur
rent through a resistor in parallel with it by 90° in an ordinary electric circuit. This
phase relationship is shown in Fig. 251.
 I J = (a + jw€)E
() =tan
1
I
W€ I
I
I
I
I
0 ...... J
c
=aE
Figure 251
dielectric.
Loss tangent for lossy
If the loss tangent is very smallthat is, a/(WE) Ithe propagation con
stant and intrinsic impedance can be calculated approximately by a binomial expan
sion. Since
then
y = jw 1 _ j a
WE
y = _ + .!.(!!.)2 + ... J
2WE 8 WE
(2518)
(2519)
38
E
where E
r
= 
Eo
a 18a
x==
WEo !GHz
Electromagnetic Plane Waves Chap. 2
I/J = 90°  (); is called the pseudoBrewster angle
Equation (2525) is applicable only for the tangential components of incident
and reflected fields that are in the same directions as shown in Fig. 234. For total
reflection (f, 1) we set (), = 90° in Eq. (2325), and the incident angle is given
by
(2524c)
(2526)
The angle specified by Eq. (2524c) is called the critical incident angle for total
reflection. A wave incident on the boundary at an angle equal to or greater than the
critical angle will be totally reflected. There is a real critical angle only if
IJIEI > IJ2E2, or, in the nonmagnetic material, if EI > E2. Hence the total reflection
occurs only if the wave propagates from a dense medium into a less dense medium.
This is because the value of sin ()c must be equal to or less than unity.
For vertical polarization, the normal components of electric fields are usually
used to determine the reflection coefficient. Therefore the reflectivity of a lossy
dielectric in vertical polarization is given by
f, = (Er  jx) sin I/J  Y(E
r
 jx)  cos
2
I/J
(E
r
 jx) sin I/J + Y(E
r
 jx)  cos
2
I/J
Similarly, the vertical transmittance of a lossy dielectric for electric fields as shown
in Eq. (2337) is
(2527)
(2528)
Horizontal polarization. The reflectivity of a lossy dielectric for electric
fields in horizontal polarization as shown in Eq. (2345) becomes
r  sin I/J  Y(Er  jx)  cos
2
I/J
h  sin I/J + Y(E
r
 jx)  cos
2
I/J
Similarly, the transmittance of a lossy dielectric for electric fields in horizontal po
larization as shown in Eq. (2346) is expressed as
T
h
= 2 sin I/J (2529)
sin I/J + Y(Er  jx)  cos
2
I/J
The reflections of electromagnetic waves by such lossy dielectric materials as sea
water, dry sand, and concrete cement are often of concern to many electronics engi
Sec. 2.5 PlaneWave Propagation in Lossy Media 39
neers. The conductivities a and relative dielectric constants E
r
of seawater, dry sand,
and concrete cement are tabulated in Table 252.
Figures 252 to 255 show, respectively, the magnitudes of reflectivity of
seawater, dry sand, and concrete cement for vertical and horizontal polarizations
against the grazing angle ljJ of 0 to 90° at a frequency range of 0.1 to 40 GHz [2].
TABLE 2·5·2 CONDUCTIVITIES AND RELATIVE DIELECTRIC
CONSTANTS OF SEAWATER, DRY SAND, AND CEMENT
u(mhos/m)
Seawater
4
20
Dry sand
2 X 10
4
4
Concrete cement
2 X 10
5
3
10.,,,r,,r,,,,
~
~ O . I
0.2
03
0.4
0.5
_3
_4
~
~ ~ ; O
20
40
Gllz
L.
01
Grazing angle l/J in degrees
Figure 252 Magnitude of the reflectivity in vertical polarization versus
grazing angle for seawater.
40
Electromagnetic Plane Waves Chap. 2
2
=3
~ ~ § § ~ ~ ~ ~ § § § 10
20
40
GHz
1.0
0.1
0.2
0.9
0.3
0.5
0.8
0.6
c
'" u
..
'"
p.,
.5
t.:'
'"
] 0.7
'2
~
::;:
10 20 30 40 50 60 70 80 90
Grazing angle 1/1 in degrees
Figure 253 Magnitude of the reflectivity in horizontal polarization versus
grazing angle for seawater,
1.0
C
'"
0.8
u
..
'"
p.,
.5
c...
'" "0
B
'2
co
os
::;:
0.2
10 20 30 90
Grazing angle 1/1 in degrees
Figure 254 Magnitude of the reflectivity in vertical and horizontal
polarizations versus grazing angle for dry sand.
Sec. 2.6 PlaneWave Propagation in MetallicFilm Coating on Plastic Substrate 41
\.0
C
.,
0.8
u
..
.,
c.
.::
~
0.6
.,
"Q
B
. ~
0.4
..
0.2
20 30
Grazing angle 1/1 in degrees
80 90
Figure 255 Magnitude of the reflectivity in vertical and horizontal
polarizations versus grazing angle for concrete cement.
2·6 PLANE·WAVE PROPAGATION IN METALLlC·FILM
COATING ON PLASTIC SUBSTRATE'"
In certain engineering applications, it is often desirable to use a metallicfilmcoated
glass to attenuate optimum electromagnetic radiation at microwave frequencies and
also to transmit as much light intensity as possible at visiblelight frequencies. Gen
erally the coated metallic film should have a high melting point, a high electrical
conductivity, high adhesion to glass, high resistance to oxidation, and insensitivity
to light and water, as well as the capability of dissipating some power for deicing,
defogging, or maintaining certain temperature levels. The metallicfilm coatings on
a plastic substrate are used in such applications as windshields on airplanes or auto
mobiles, medical equipment in hospitals, and on dome windows of space vehicles,
missiles, and other military devices.
*Copyright © 1975 by the Institute of Electrical and Electronic Engineers, Inc. Light Transmit
tance and Microwave Attenuation of a GoldFilm Coating on a Plastic Substrate by S. Y. Liao [3];
reprinted from IEEE Trans. on Microwave Theory and Techniques. MTT23, No. 10,846849, October
1975.
42 Electromagnetic Plane Waves Chap. 2
2·6·1 Surface Resistances of Metallic Films
Very thin metallic films have a much higher resistivity than a bulk metal because of
electron scattering from the film surface. If the film thickness is very large compared
to the electron meanfreepath, the resistivity is expected to be nearly the same as
that of a bulk metal. When the film thickness is on the order of the electron mean
freepath, then the role of electron scattering becomes dominant. Fuchs [4] and
Sondheimer [5] considered the general form of the solution of the Boltzmann equa
tion for the case of a conducting film and found the film conductivity CTf in terms of
the bulk conductivity CT, the film thickness t, and the electron meanfreepath p:
CTf = ~ ; [en(~ ) + 0.4228] for t ~ P (261)
The surface resistance of conducting films is generally quoted in units of ohms per
square because in the equation for resistance
specific resistivity x length
R = thickness x width
pe
tw
(262)
(263) fi/square
when units of length eand width ware chosen to have equal magnitude (that is, re
sulting in a square), the resistance R in ohms per square is independent of the di
mensions of the square and equals
R
s
= Pf =_1
t tCTf
According to the FuchsSondheimer theory, the surface resistance of a metallic film
is decreased as the thickness of the film is increased.
2·6·2 Optical Constants of Plastic Substrates
and Metallic Films
The optical properties of materials are usually characterized by two constants, the
refractive index n and the extinction index k. The refractive index is defined as the
TABLE 2·6·1 SUBSTRATE MATERIALS
Substrate material Refractive index n
Corning Vycor
Crystal quartz
Fused silica
Plexiglass
Polycyclohexyl methacrylate
Polyester glass
Polymethyl methacrylate
Zinc crown glass
1.458
1.540
1.458
1.490
1.504
1.500
1.491
1.508
Sec. 2.6 PlaneWave Propagation in MetallicFilm Coating on Plastic Substrate 43
ratio of the phase velocities of light in vacuum and in a medium. The extinction in
dex is related to the exponential decay of the wave as it passes through a medium.
Most optical plastics are suitable as substrate materials for a dome window and for
metallicfilm applications. Table 261 lists the values of the refractive index n of
several nonabsorbing plastic substrate materials in common use [6].
The measured values of the refractive index n and the extinction index k of thin
metallicfilm coatings deposited in a vacuum [6] are tabulated in Table 262.
TABLE 2·6·2 REFRACTIVE INDEX n AND EXTINCTION INDEX k OF THIN METALLIC
FILMS
Copper film Gold film Silver film
Wavelength
(A) n k n k n k
2000 1.427 1.215 1.13 1.23
2200 1.32 1.29
2300 1.38 1.31
2400 1.37 1.33
2500 1.39 1.34
2600 1.45 1.35
2700 1.51 1.33
2800 1.57 1.27
2900 1.60 1.17
3000 1.67 0.96
3100 1.54 0.54
3200 1.07 0.32
3300 0.30 0.55
3400 0.16 1.14
3500 0.12 1.35
3600 0.09 1.52
3700 0.06 1.70
3800
4000
4500 0.870 2.200 1.400 1.880
4920
5000 0.880 2.420 0.840 1.840
5460
5500 0.756 2.462 0.331 2.324
6000 0.186 2.980 0.200 2.897
6500 0.142 3.570 0.142 3.374
7000 0.150 4.049 0.131 3.842
7500 0.157 4.463 0.140 4.266
8000 0.170 4.840 0.149 4.654
8500 0.182 5.222 0.157 4.993
9000 0.190 5.569 0.166 5.335
9500 0.197 5.900 0.174 5.691
10,000 0.197 6.272 0.179 6.044
Source: Adapted from the American Institute of Physics Handbook by the American Institute of
Physics. Copyright © 1972 by McGrawHili, Inc. (Used with permission of McGrawHili Book
Company.)
44
Electromagnetic Plane Waves Chap. 2
2·6·3 Microwave "adiation Attenuationof
Metallic·Film Coating on Plastic Substrate
A conductor of high conductivity and low permeability has low intrinsic impedance.
When a radio wave propagates from a medium of high intrinsic impedance into a
medium of low intrinsic impedance, the reflection coefficient is high. From electro
magnetic plane wave theory in the far field, high attenuation occurs in a medium
made of material having high conductivity and low permeability. Good conductors,
such as gold, silver, and copper, have high conductivity and are often used as the
material for attenuating electromagnetic energy. Microwave radiation attenuation by
a metallicfilm coating on substrate consists of three parts [7]:
Attenuation = A + R + C dB (264)
where A = absorption or attenuation loss in decibels inside the metallicfilm
coating while the substrate is assumed to be nonabsorbing plastic glass
R = reflection loss in decibels from the multiple boundaries of a metallicfilm
coating on substrate
C = correction term in decibels required to account for multiple internal
reflections when the absorption loss A is much less than 10 dB for
electrically thin film
Figure 261 shows the absorption and reflection of a metallicfilm coating on a
plastic substrate.
Metallic
film
t
Air
RF energy
I _ > ~
Air
Substrate
c:::======:t=::::::>T
R <C::==::::::::J
R¢:::J
Figure 261 Absorption and reflection
of film coating on plastic substrate.
Absorption loss A. As described in Section 251, the propagation con
stant 'Y for a uniform plane wave in a good conducting material is given in Eq.
(257) as
'Y = a + jf3 = (l + j)Y1TfJLO'f for O'f ~ we (265)
If the plastic substrate is assumed to be a nonabsorbing material, the absorption loss
A of the metallicfilm coating on a substrate is related only to the thickness t of the
coated film and the attenuation a as shown:
A = 20 10gIO eat = 20(at) 10gIO e = 20(0.4343)(at)
= 8.686tY1TfJLO'f dB
where t = thickness of the film coating in meters
(266)
Sec. 2.6 PlaneWave Propagation in MetallicFilm Coating on Plastic Substrate 45
ft = permeability of the film in henrys per meter
f = frequency in hertz
CFt = conductivity of the coated film in mhos per meter
Since the thickness of the coated film is very thinfor example, 100 angstroms at
most (A = 10
10
m)the absorption loss A is very small and can be ignored.
Reflection loss R. The reflection loss R due to the multiple boundaries of
the substrate glass coated with a metallic film can be analyzed by means of the
energytransmission theory (see Eq. 2318 in Section 233), and it is expressed as
R = 20 log 211Jr1  20 log 21718 I  20 log 2171a I
l71a + 1Jr1 11Jr + 718 I 1118 + 71a I
= 20 log l71a + 1Jr111Jr + 71811718 + 71a I dB (267)
811Jr11718 II71a I
where 1Jr = intrinsic impedance of the coated metallic film
71g = intrinsic impedance of the glass substrate
11a = intrinsic impedance of air or free space = 377 n
The intrinsic impedance of a metallic film is given by Eq. (2511) as
11Jr1 = 10 + I = (268)
and the intrinsic impedance of a glass substrate is expressed in Eq. (2516) as
71 = = 377 = 194 n for CF
g
W€o
q
(269)
8 v;: v'3.78
where CF
g
= about 10
12
mho/m is the conductivity of the glass substrate
€o
g
= 4.77 X 10
11
F/m is the permittivity of the glass substrate
€or = 3.78 is the relative permittivity of the glass substrate
Substituting the values of the intrinsic impedances 1Jr, 71g, and 71a in Eq. (267)
yields the reflection loss as [12]
R = 20 log = 88 + 10 log (7) dB (2610)
Correction term C. For very electrically thin film, the value of the absorp
tion loss A is much less than 10 dB and the correction term is given by [8]
C = 20 log 11  PlOA/IO(cos ()  j sin () 1 (2611)
where p = (1Jr  71
a
)2 = 1 for 71a 1Jr
1Jr + 71a
() = 3.54t YfftCFt
Over the frequency range of 100 MHz to 40 GHz, the angle () is much smaller
than 1
0
so that cos () = 1 and sin () = (). Thus the correction term of Eq. (2611)
46 Electromagnetic Plane Waves Chap. 2
can be simplified to
C = 20 log [3.54tYfJL<Tt] = 48 + 20 log dB (2612)
Finally, the total microwave radiation attenuation by a metallicfilm coating on a
glass substrate, defined in Eq. (264) in the far field, becomes
Attenuation = 40  20 log (R
s
) dB (2613)
It is interesting to note that the microwave radiation attenuation due to the coated
metallic film on a glass substrate in the far field is independent of frequency and is
related only to the surface resistance of the coated metallic film [12].
2·6·4 Light Transmittance of Metallic·Film Coating
on Plastic Substrate
The complex refractive index of an optical material is given by [6] as
N = n  jk (2614)
It is assumed that light in air is normally incident on a thin absorbing film Nt of
thickness tl and that it is transmitted through an absorbing substrate of complex re
fractive index N
z
and then emerges into air. The incidence and the emergence media
are dielectrics of refractive index no. The reflection loss between the substrate and
the air is small and, for convenience, is taken as zero. Figure 262 shows light
transmittance, reflection, and absorption through a thin absorbing metallic film and
a plastic substrate.
"0
LIGHT
ABSORBING FILM
SUBSTRATE
Figure 262 Light transmittance,
reflection, and absorption through a thin
metallic film coated on plastic substrate.
Using the multireflection and transmission theory, the reflection loss is ex
pressed by
R = ate
a
+ aze
a
+ a3 cos v + a4 sin II
bt e
a
+ bze
a
+ b
3
cos II + b
4
sin II
(2615)
where at = [(no  nl)Z + kf][(nl + nz)Z + (k
1
+ k
2
)Z]
az = [(no + nt)Z + kf][(nl  nz)Z + (k
l
 kz)Z]
a3 = 2{[nij  (ni + kD][(ni + kI)  + km + 4n
o
k
t
(n
1
k
z
 nzk
t
)}
a4 = 4{[nij  (ni + kD](ntk
z
 nzk
t
)  nokt[(ni + kI)  +
Sec. 2.6 PlaneWave Propagation in MetallicFilm Coating on Plastic Substrate 47
(2616)
47Tk
l
tl
a=
'\0
'\0 = 7is the wavelength in a vacuum
c = 3 X 10
8
m/s is the velocity of light in a vacuum; f is the frequency in
hertz
47Tnl tl
v=
'\0
b
,
= [(no + nl)Z + km(nl + nz)Z + (k
,
+ kz)Z]
b
z
= [(no  nl)Z + kT][(n,  nz)Z + (k
l
 kz)Z]
b
3
= 2{[n5  (nf + kD][(nf + kD  ( n ~ + kD]  4n
o
k
,
(n
l
k
z
 nzk
l
)}
b4 = 4{[n5  (nf + kD](nlk
z
 nZk
1
) + nok,[(nf + kD  ( n ~ + k ~ ) ] }
Transmittance T is given by [6] as
T = 16
n
onz(nf + kD
ble" + bze" + b
3
cos V + b
4
sin v
Absorption loss A is given by
and the total attenuation loss L is
A=lRT
L=A+R
(2617)
(2618)
When the concave surface of a plastic dome is uniformly coated with an elec
tromagnetic interference shield of metallic film, however, the light is normally inci
dent on the plastic substrate N
z
, transmits through the thin metallic film N
I
, and then
emerges into the air no. From the electromagnetic theory of luminous transmission
in transparent media, the light transmittance is the same regardless of whether light
is normally incident on the substrate medium N
z
or on the absorbing film N
1
• Thus
the total attenuation loss is the same in both cases.
2·6·5 Plane Wave in Gold·Film Coating on Plastic
Glass
Metallicfilm coatings on plastic glasses have many engineering applications [9]. A
gold film, for example, is coated on the concave surface of a plasticglass dome so
that an optimum amount of microwave radiation is attenuated by the gold film while,
at the same time, a sufficient light intensity is transmitted through the gold film.
Surface resistance. At room temperature the properties of bulk gold are
Conductivity:
Resistivity:
Electron meanfreepath:
(T = 4.10 X 10
7
mhos/m
p = 2.44 X 10
8
nom
p = 570 A
It is assumed that the thickness t of the gold film varies from 10 to 100 A. Its surface
48 Electromagnetic Plane Waves Chap. 2
TABLE 2·6·3 SURFACE RESISTANCE OF GOLD FILM
Thickness t Conductivity Ur Resistivity Pr Surface resistance R,
(A) (mho/m x 10
7
) (!1m x 10
7
) (!1Isquare)
100 1.17 0.86 8.60
90 1.I1 0.90 10.00
80 1.03 0.97 12.13
70 0.96 1.04 14.86
60 0.85 1.17 19.50
50 0.77 1.30 26.00
40 0.68 1.48 37.00
30 0.54 1.86 62.00
20 0.42 2.41 120.00
10 0.22 4.48 448.00
resistances are computed by using Eqs. (261) and (263) and are tabulated in
Table 263.
Figure 263 shows surface resistances of gold film in ohms per square against
the thicknesses of gold film from 10 to 100 A. According to the FuchsSondheimer
theory, gold films have a typical surface resistance at about 10 to 30 O./square for a
thickness of about 90 to 45 A. The surface resistance is decreased as the thickness of
the gold film is increased.
Figure 263 Surface resistance of gold
film versus thickness of gold film.
I
I
I
I
I
I I
I I
50
60
:
CI
!:
:Ii
...
...
:: ... 40
CIa:
(:let
=

... a:
u ...
ZlL.
et 20
In
en
...
a: 10
...
u
et
0L_.....L._.....L......L.'__
20 30 40 50 60 70 80 100
THICKNESS OF GOLD FILM IN A
Microwave radiation attenuation. Substituting the values of the surface
resistances for gold films in Eq. (2613) yields the microwave radiation attenuation
in decibels by the goldfilm coating on a plastic glass. Figure 264 shows graphi
cally the microwave radiation attenuation versus the surface resistance of the gold
film coating. For a coated gold film having a surface resistance of 12 O/square, the
Sec. 2.6 PlaneWave Propagation in MetallicFilm Coating on Plastic Substrate 49
25
20
JXl
"
.:::
c
.S!
IS
'eO
:3
C
~
';;j
<I)
10
>
os
~
8
u
jj
5
0
5 10 20
0  Hawthorne's data
0 Liao's data
30 40
Surface resistance R, in ohms per square
Figure 264 Microwave radiation attenuation versus surface resistance of gold
film.
microwave radiation attenuation is about 19 dB. The data agree with Hawthorne's
conclusion [10,12].
Light transmittance. For the visiblelight region, the values of the refrac
tive index n and the extinction index k of a goldfilm coating on a plastic glass de
posited in a vacuum are taken from Table 262. The refractive index no of air or
vacuum is unity. The refractive index nz of the nonabsorbing plastic glass is taken as
1.50. Light transmittance T and light reflection loss R of a goldfilm coating on a
plastic glass are computed by using Eqs. (2616) and (2615), respectively. Then
from the values of T and R absorption loss A and total attenuation L are calculated.
The results are presented graphically in Fig. 265. It can be seen that for a light
transmittance of 80% the thickness of the goldfilm coating is about 80 A. When the
absorption loss in the substrate material is considered, however, the light transmit
tance may be a little less than 80%.
Optimum condition. The surface resistance of a metallic film decreases as
the thickness of the film coating increases. However, the luminous transmittance is
decreased as the surface resistance of the metallic film is decreased. This relation
ship for the visiblelight region is shown in Fig. 266.
Figure 267 illustrates the relationship of light transmittance versus wave
length for a given surface resistance of gold film. If a power dissipation of
5 W/square is allowed for deicing and defogging or keeping warm by the goldfilm
coating on a plastic substrate and if the effective area of the coated film is 13 square
inches in a missile, the surface resistance of the coated film must be 12 !1/square.
50
100 rrr.....r.....,.......,
Electromagnetic Plane Waves Chap. 2
FILM
THICKNESS
IN )l.
20
30
40
50
60
10
dl
Q
,fIS"
__ _ ",
 _ "" I ' /10
30   ,'\\ ,// .
 ___ /////'60
 .......... , /".' 50
20      ........, \" ...  " ,,/ ,
 ". 40 FILM
 ,," ""30 THICKNESS
10  " ...... ,., "",,
LIGHT IN J\.
IN PER CENT 10
o __
2000 3000 4000 5000 1000 10000
WAVELENGTH IN )l.
I
Z
w
U
90
z
w
U
Z
et
l
t: 80
:i;
en
Z
et
a:
l
I
%
:? 70 L.__ ____I' _L _.J
' 0 10 20 30 40
SURFACE RESISTANCE OF GOLD FILM IN OHMS PER SQUARE
• LIGHT TRANSMITTANCE DECREASES, AS SURFACE
RESISTANCE DECREASES
• FOR 80 PER CENT OF LIGHT TRANSMITTANCE,
SURFACE RESISTANCE IS ABOUT 12 OHMS PER SQUARE
Figure 265 Light transmittance T and
light attenuation loss L versus wave
length Awith film thickness t as
parameter for gold film.
Figure 266 Light transmittance
versus surface resistance of gold film.
The power dissipation can be expressed as
V
2
(28)2
p =  = = 5 W/square
R 12 x 13
in which the voltage applied to the filmcoating terminations is 28 V. The optimum
condition occurs at 19 dB of microwave radiation attenuation and 80% of light trans
mittance.
Sec. 2.6 PlaneWave Propagation in MetallicFilm Coating on Plastic Substrate
~ VISIBLE lIGHT+l
a:
90
w
a.
R
s
z
w
80
37
c.;I
z
26 ct
l
I
~
70 20
(I)
z
ct
15
a:
I
60
I 12
:z:
~
~
8.6
50
3000 4000 6000 10000
WAVELENGTH ~ IN A
• LIGHT TRANSMITTANCE INCREASES AS SURFACE RESISTANCE
INCREASES
• LIGHT TRANSMITTANCE OF 80 PER CENT OCCURS AT 12
OHMS PER SQUARE
Figure 267 Light transmittance versus wavelength with surface resistance R, as
parameter for gold film.
51
Example 265: Calculation of a GoldFilm Coating
A gold film of 80 Ais coated on a plastic substrate with a refractive index of 1.50. De
termine:
a. The goldfilm surface resistance in ohms per square
b. The microwave attenuation in decibels
c. The light transmittance T for red light of 0.69 p.m
d. The light reflection loss R at A = 0.69 p.m
Solution
a. From Eq. (261) the goldfilm conductivity is
CTf = ~ ; [ l n (7) + 0.4228]
3 x 80 X 10
10
x 4.1 x
4 x 570 X IO
IO
1.03 X 10
7
mhos/m
From Eq. (26 3) the goldfilm surface resistance is
52
Electromagnetic Plane Waves
I I
R =  = 
s tUf 80 X 10
10
x 1.03 X 10
7
= 12.12 O/squares
b. From Eq. (2613) the microwave attenuation is
Attenuation = 40  20 log (R
s
)
= 40  20 log (12.12)
= 18 dB
c. From Fig. 265 the light transmittance T is estimated to be 75%.
d. From the same figure the light reflection loss R is about 25%.
Chap. 2
266 Plane Wave in SilverFilm or CopperFilm
Coating on Plastic Substrate*
Silverfilm or copperfilm coating on a plastic substrate has many uses in engineering
[11]. The surface resistance, microwave radiation attenuation, light transmittance,
and optimum condition of both silverfilm coating and copperfilm coating can be
described in the same way as for foldfilm coating.
Surface resistance. At room temperature the properties of bulk silver and
bulk copper are
Silver
Conductivity:
Resistivity:
Electron meanfreepath:
Copper
Conductivity:
Resistivity:
Electron meanfreepath:
(T = 6.170 X 10
7
mhos/m
p = 1.620 X 10
8
o'm
p = 570 A
(T = 5.800 X 10
7
mhos/m
p = 1.724 X 1O
8
0'm
p = 420 A
It is assumed that the thickness t of the silver and copper films varies from 10 to
100 A. The surface resistances of silver and copper films are computed by using Eqs.
(261) and (263) and are tabulated in Tables 264 and 265, respectively.
Figure 268 plots the surface resistances of silver and copper films, respec
tively, in ohms per square versus the thickness of the silver and copper films from 10
to 100 A.
*Copyright © 1976 by The Institute of Electrical and Electronics Engineers, Inc. RF Shielding
Effectiveness and Light Transmittance of Copper or Silver Coating on Plastic Substrate by S. Y. Liao
[II]; reprinted from IEEE Trans. on Electromagnetic Compatibility, EMC18, No.4, 148153,
November 1976.
Sec. 2.6
PlaneWave Propagation in MetallicFilm Coating on Plastic Substrate 53
TABLE 2·6·4 SURFACE RESISTANCE R
s
OF SILVER FILM
Thickness t Conductivity uf Resistivity Pf Surface resistance R
s
(A) (mho/m x 10
7
) (!1m x 10
7
) (!1isquare)
100 1.78 0.571 5.71
90 1.66 0.602 6.69
80 1.55 0.645 8.06
70 1.44 0.695 9.93
60 1.31 0.763 12.72
50 1.16 0.862 17.24
40 0.99 1.010 25.25
30 0.81 1.230 41.00
20 0.61 1.640 82.00
10 0.36 2.760 276.00
TABLE 2·6·5 SURFACE RESISTANCE R
s
OF COPPER FILM
Thickness t
(A)
Conductivity uf
(mho/m x 10
7
)
Resistivity Pf
(!1m x 10
7
)
Surface resistance R
s
(!1/square)
100
90
80
70
60
50
40
30
20
10
1.93
1.85
1.73
1.62
1.47
1.33
1.17
0.95
0.73
0.43
0.52
0.54
0.58
0.62
0.68
0.75
0.86
1.05
1.37
2.31
5.20
6.00
7.25
8.86
11.33
15.00
21.50
35.00
68.50
231.00
100 90 80
70 60 50 40 30 20
OL..._I...__'_I...__''I...__'_'__.....L_'
10
60
<I)
....
os
;:l
50
~
....
<I)
0
'" 40
E
..c::
0
.5
' l : : : ~
30
<I)
u
t:
~
20
'"
'v;
~
<I)
u
~ 10
....
;:l
ell
Film thickness t in A
Figure 268 Surface resistance of silver and copper film versus thickness of film.
54 Electromagnetic Plane Waves Chap. 2
RF radiation attenuation. Substitution of the values of the surface resis
tances of silver or copper films in Eg. (2613) yields the microwave radiation atten
uation in decibels by the silverfilm or copperfilm coating on a plastic substrate. Fig
ure 269 shows the microwave radiation attenuation versus the surface resistance of
silverfilm or copperfilm coating, respectively.



I I
0 Copper film
0   Silver film
I I
a:l 'b,
] 20 "
.8
t
15
8
u
:i
o
I0 ' 'I_'__ .1_.I ___II__
5 10 12 IS 20 25
Surface resistance R
s
of film coatings in ohms per square
Figure 269 Microwave radiation attenuation versus surface resistance of silver
and copper film.
Light transmittance. Light transmittance T and light reflection loss R of
silverfilm and copperfilm coatings are computed by using Eqs. (2616) and
2615), respectively. The values of the refractive index n and the extinction index k
of the silverfilm and copperfilm coatings deposited in a vacuum for the light
frequency range are taken from Table 262. The refractive index no of air or vac
uum is unity. The refractive index nz of the nonabsorbing plastic glass is taken as
1.5. From the values of light transmittance T and light reflection loss R, absorption
loss A and total attenuation L are calculated. The results are illustrated in Figs. 2610
and 2611 for silverfilm and copperfilm coatings, respectively.
Optimum Condition. The light transmittance is increased as the surface re
sistance is increased. The relationship is illustrated in Fig. 2612 for silver film and
copper film, respectively. The optimum condition occurs at 18 dB of microwave ra
diation attenuation and 94% of light transmittance with a surface resistance of about
12 f!/square.
100, I I i
Film thickness, t (A) I
0
1
I I I
2000 2500 3000 3500 4000
Figure 2·6·11 Light transmittance T
and light attenuation loss L of copper
film versus wavelength with film
thickness t as parameter.
100
90
I
oZ
80
ZW
IW
70
a.
W
z
(.)
.... 60
IZ
10
50
Z;j
40 a: W
11
11
30
t:ll
:z::
.... t:l
20
....
10
0
10
20
30
40
50
60
70
80
90
100
30
90t Light transmittance, T (per cent) _
80
70
60
501:=   :::' ..;=
 .... , ........... ,
, ','
40' .... "
r .. " " ,
 ' .... ,,,,
 ... ",
 ....., "
 ....... , ,,\
....... '," \'
   "', ,,\\ \
.... ','\\\\ 100
              ,\ \ \ \ I A90
201  "'\\\\'
_ ... "', ,,\\\\' 70
... , 60
, ,\'"""
, '" 50
101 ... ;;::: 40
. ... "
Light attenuation, L (per cent) .... ,' ••!!::: _::¥' 30
'
, 10
Wavelength, A(A)
g:
Figure 2·6·10 Light transmittance T and light attenuation loss L of silver film
versus wavelength A with film thickness t as parameter.
56 Electromagnetic Plane Waves Chap. 2
Silver film
~ 90
~
.,
c.
.::
.,
<.)
c
~
.§ 80
'"
c
~

~
;.:::l
Copper film
40 30 20 10 12
70 I... J...J... .L .L .L_'
o
Surface resistance R
s
in ohms per square
Figure 2612 Light transmittance versus surface resistance of silver and copper
films.
Example 266: Computation of a CopperFilm Coating
A copper film of 60 Ais coated on a plastic substrate with a refractive index of 1.50.
Compute:
a. The copperfilm surface resistance in ohms per square
b. The microwave attenuation in decibels
c. The light transmittance T for red light of 0.69 Mm
d. The light reflection loss R at A = 0.69 Mm
Solution
107[ (420) J
In 60 + 0.4228
a. From Eq. (261) the copperfilm conductivity is
fTj = ~ ; [ I n ( ~ ) + 0.4228]
3 x 60 X 10
10
x 5.8 x
4 x 420 x 10 10
1.47 X 10
7
mhos/m
From Eq. (263) the copperfilm surface resistance is
I 1
R =  = ,,
S ffTj 60 X 10
10
x 1.47 X 10
7
= 11.34 O/square
b. From Eq. (2613) the microwave attenuation is
Attenuation = 40  20 log (R
s
)
Suggested Readings
= 40  20 log (11.34)
= 19 dB
c. The light transmittance T is estimated from Fig. 2611 to be 82%
d. From the same figure the light reflection loss R is about 18%.
REFERENCES
57
[1] ADLER, R. B., et a!., Electromagnetic Energy Transmission and Radiation. P. 8. MIT
Press, Cambridge, Mass., 1969.
[2] LIAO, S. Y., Reflectivities of electromagnetic waves by seawater, dry sand, concrete ce
ment, and dry ground. A report for the Naval Weapons Center, Department of the
Navy, China Lake, Calif., August 1976.
[3] LIAO, S. Y, Light transmittance and microwave attenuation of a goldfilm coating on a
plastic substrate. IEEE Trans. on Microwave Theory and Techniques, MTT23, No. 10,
October 1975.
[4] FUCHS, K., The conductivity of thin metallic films according to the electron theory of
metals. Proc. Camb. Phil. Soc., 30, 100 (1938).
[5] SONDHEIMER, E. H., The meanfreepath of electrons in metals. Advances in Physics, 1,
1 (1952).
[6] American Institute of Physics Handbook, Sec. 612, 6119 to 6121, and 6138.
McGrawHill Book Company, New York, 1972.
[7] SCHULZ, R. B., et a!., Shielding theory and practice. Proc. 9th TriService Conf. on
Electromagnetic Compatibility, October 1963.
[8] VASAKA, C. S., Problems in shielding electrical and electronic equipment. U.S. Naval
Air Development Center. Johnsville, Pa., Rep. No. NACDELN5507, June 1955.
[9] LIAO, S. Y, Design of a gold film on a glass substrate for maximum light transmittance
and RF shielding effectiveness. IEEE Electromagnetic Compatibility Symposium
Records, San Antonio, Texas, October 1975.
[10] HAWTHORNE, E. I., Electromagnetic shielding with transparent coated glass. Proc. IRE.,
42,548553, March 1954.
[II] LIAO, S. Y, Light transmittance and RF shielding effectiveness of a gold film on a glass
substrate. IEEE Trans. on Electromagnetic Compatibility, EMC·17, No.4, November
1975.
[12] LIAO, S. Y, RF shielding effectiveness and light transmittance of copper or silver coat
ing on plastic substrate. IEEE Trans. on Electromagnetic Compatibility, EMC·18, No.4,
November 1976.
SUGGESTED READINGS
COLLIN, R. E., Foundations for Microwave Engineering, Chapter 2. McGrawHill Book Com
pany, New York, 1966.
HAYT, W. H., Engineering Electromagnetics, 4th ed., Chapters 10 and 11. McGrawHill
Book Company, New York, 1981.
58
Electromagnetic Plane Waves Chap. 2
JORDAN, E. and K. G. BALMAIN, Electromagnetic Waves and Radiating Systems, 2nd ed.,
Chapters 4,5, and 6. PrenticeHall, Inc., Englewood Cliffs, N. J., 1968.
SEELY, S., and A. D. POULARIKAS, Electromagnetics, Classical and Modern Theory and Appli
cations. Marcel Dekker, Inc., New York, 1979.
PROBLEMS
21. In a certain homogeneous medium the group velocity as measured by the propagation
time of a pulse is found to be proportional to the square root of the frequency
(v
g
= ~ where A is a constant) over a particular frequency range. It is assumed the
medium is a nonmagnetic insulator.
a. Determine the relationship between the phase and group velocities.
b. Derive an expression for the relative dielectric constant of this medium.
22. Show that a/az = f3g and a/at = jw for a sinusoidal wave propagating in the z di
rection.
23. The electric field of a plane wave propagating in free space is given in complex nota
tion by
Where U
x
and U
y
are unit vectors in the x and y directions of a righthand coordinate
system.
a. In which direction is the wave propagating?
b. Find the frequency of the propagating signal.
c. Determine the type of wave polarization (linear, circular, or elliptical).
d. Express the magnetic field intensity H of the propagating wave.
e. Calculate the average power flow per square meter in the direction of the propaga
tion.
24. Determine the permittivity of a slab of dielectric material that will reflect 20% of the
energy in a plane wave. The wave is striking normally to and propagating through the
slab. Neglect the reflections from the back face of the slab.
25. The reflection and refraction of microwave propagating in the ionosphere are deter
mined by the electron density in the ionosphere. If the electron density is assumed to
be 10
14
electrons per cubic meter, detemine the critical frequency for vertical incidence
so that the signal wave will be reflected back to the earth.
26. The conductivity (J of copper is 5.8 x 10
7
mhos/m and its relative permeability is
unity. Calculate the magnitudes of reflectivity of copper for vertical and horizontal po
larizations against the grazing angle t/J of 0 to 90° at a frequency range of 1 to 40 GHz.
The increment of the angle t/J is 10° each step and the increment of the frequency is
10 GHz each step.
27. At the Brewster angle there is no reflected wave when the incident wave is vertically
polarized. If the incident wave is not entirely vertically polarized there will be some
reflection but the reflected wave will be entirely of horizontal polarization. Verify Eq.
(2524B) for the Brewster angle in terms of the relative dielectrics.
28. Determine the pseudoBrewster angle t/J in terms of VI , V2, 7/1 , and 7/2 for a good con
ductor. [Hint: Start from Eq. (2513b).]
Problems 59
29. Calculate the pseudoBrewster angles for seawater, dry sand, concrete cement, and dry
ground.
210. Determine the pseudoBrewster angle ljJ in terms of E, and x for a lossy dielectric.
[Hint: Start from Eq. (2526).]
211. Bulk gold has a conductivity of 4.1 x 10
7
mhos/m, a resistivity of 2.44 x IW
8
nm,
and an electron meanfreepath of 570 A. Calculate the surface conductivity, surface
resistivity, and surface resistance of gold film for thicknesses of 10 to 100 A with an
increment of 10 Afor each step.
212. Silver has a conductivity of 0.617 x 10
8
mhos/m, a resistivity of 1.620 x 10
8
nm,
and an electron meanfreepath of 570 A. Repeat Problem 211 for silver film.
213. Seawater has a conductivity of 4 mhos/m and a relative dielectric constant of 20 at a
frequency of 4 GHz. Compute:
a. The intrinsic impedance
b. The propagation constant
c. The phase velocity
214. Repeat Problem 213 for dry sand (u = 2 X 10
4
mho/m and €, = 4) and copper
(u = 5.8 X 10
7
mhos/m).
215. A uniform plane wave is incident normally from air onto the surface of seawater. The
electric intensity of the incident wave is 100 x 10
3
Vim at a frequency of 5 GHz in
the vertical polarization. Calculate:
a. The electric intensity of the reflected wave
b. The electric intensity of the transmitted wave
216. Repeat Problem 215 for an angle of incidence of 30°.
217. Dry ground has a conductivity of 5 x 10
4
mhos/m and a relative dielectric constant
of 10 at a frequency of 500 MHz. Compute:
a. The intrinsic impedance
b. The propagation constant
c. The phase velocity
218. Copper has a conductivity of 5.8 x 10
7
mhos/m and is considered an ideal material for
shielding. A shield is made of copper with a thickness of I mm. If a uniform plane
wave is normally incident upon the copper shield, compute the absorption loss in deci
bels by the copper atf = MHz.
219. A radar transmitter has an output power of 100 kW average. Calculate the power den
sity in dBW/m
2
at a range of 3000 m and the freespace attenuation in decibels at
f= 10 GHz.
220. Write a complete FORTRAN program to compute the magnitudes of reflectivity in ver
tical polarization against a grazing angle of seawater. The frequency varies from 0.1 to
40 GHz with an increment of 0.1 GHz between 0.1 to I GHz, 1 GHz between 1 to 10
GHz, and 5 GHz between 10 to 40 GHz. Use FIO.5 format for numerical outputs and
Hollerith format for character outputs. Print the outputs in three columns such as fre
quency (GHz), grazing angle (degrees), and gamma (vertical reflectivity).
221. Write a complete FORTRAN program to compute the magnitudes of reflectivity in
horizontal polarization against a grazing angle for seawater. (Refer to Problem 220 for
specifications. )
222. Write a complete FORTRAN program to compute the light transmittance and light
reflection of a goldfilm coating on a nonabsorbing plastic glass for thicknesses of 10 to
100 Awith an increment of 10 Aeach step. The wavelength varies from 2000 to
60 Electromagnetic Plane Waves Chap. 2
10,000 A with an increment of 500 Aeach step. The values of the refractive index n
and the extinction index k of a goldfilm coating on a nonabsorbing plastic glass de
posited in a vacuum are listed in Table 262. The refractive index n of the nonab
sorbing plastic glass is I. 5. Use FlO. 5 format for numerical outputs, Hollerith format
for character outputs, and Data statements to read in the input values.
223. Write a complete FOIITRAN program to compute the light transmittance and light
reflection for an aluminumfilm coating on a nonabsorbing plastic substrate for thick
nesses of 10 to 100 Aand print out the results in percentages. Use F10.5 format for
numerical outputs, Hollerith format for character outputs, and Data statements to read
in the input values. Print the outputs in column form with proper headletters and
units. The refractive index n of the nonabsorbing plastic glass is 1.50. The refractive
index n and extinction index k for aluminum film are tabulated in Table P223. (Refer
to Problem 2 22 for specifications.)
224. Repeat Problem 222 for a silverfilm coating on a nonabsorbing plastic glass for the
wavelengths from 2000 to 3700 Awith an increment of 100 A each step. (Refer to
Table 262 for the values of nand k.)
TABLE P2·23
Wavelength Refractive Extinction Wavelength Refractive Extinction
(A) index n index k (A) index n index k
ס ס o o 0.00 0.00 0000 0.00 0.00
2000 0.11 2.20 4500 0.51 5.00
2200 0.13 2.40 5000 0.64 5.50
2400 0.16 2.54 5500 0.82 5.99
2600 0.19 2.85 6000 1.00 6.50
2800 0.22 3.13 6500 1.30 7.11
3000 0.25 3.33 7000 1.55 7.00
3200 0.28 3.56 7500 1.80 7.12
3400 0.31 3.80 8000 1.99 7.05
3600 0.34 4.01 8500 2.08 7.15
3800 0.37 4.25 9000 1.96 7.70
4000 0.40 4.45 9500 1.75 8.50
225. Repeat Problem 222 for a copperfilm coating on a nonabsorbing plastic glass for the
wavelengths from 4500 to 10,000 Awith an increment of 500 Aeach step.
226. Repeat Problems 220 and 221 for dry sand.
227. Repeat Problems 220 and 221 for concrete cement.
228. Repeat Problems 220 and 221 for dry ground.
229. Start from Eqs. (2325) and (2336) and verify Eq. (2524a).
230. Derive Eq. (2525) from Eq. (2524a) by assuming the loss tangent to be much less
than unity.
Chapter 3
Microwave Transmission
Lines
3D INTRODUCTION
Conventional twoconductor transmission lines are commonly used for transmitting
microwave energy. If a line is properly matched to its characteristic impedance at
each terminal, its efficiency can reach a maximum.
In ordinary circuit theory it is assumed that all impedance elements are lumped
constants. This is not true for a long transmission line over a wide range of frequen
cies. Frequencies of operation are so high that inductances of short lengths of con
ductors and capacitances between short conductors and their surroundings cannot be
neglected. These inductances and capacitances are distributed along the length of a
conductor, and their effects combine at each point of the conductor. Since the wave
length is short in comparison to the physical length of the line, distributed parame
ters cannot be represented accurately by means of a lumpedparameter equivalent
circuit. Thus microwave transmission lines can be analyzed in terms of voltage, cur
rent, and impedance only by the distributedcircuit theory. If the spacing between
the lines is smaller than the wavelength of the transmitted signal, the transmission
line must be analyzed as a waveguide.
31 TRANSMISSIONLINE EQUATIONS AND SOLUTIONS
311 TransmissionLine Equations
A transmission line can be analyzed either by the solution of Maxwell's field equa
tions or by the methods of distributedcircuit theory. The solution of Maxwell's
equations involves three space variables in addition to the time variable. The
distributedcircuit method, however, involves only one space variable in addition to
61
62 Microwave Transmission Lines
Chap. 3
(311)
the time variable. In this the latter method is used to analyze a transmission
line in terms of the voltage, current, impedance, and power along the line.
Based on uniformly distributedcircuit theory, the schematic circuit of a con
ventional twoconductor transmission line with constant parameters R, L, G, and C
is shown in Fig. 3 I 1. The parameters are expressed in their respective names per
unit length, and the wave propagation is assumed in the positive z direction.
R L
A
R L
B
/

i
Gt
rc
i(z, t) i(z + t)
/
V(z,t) Gl1z
C Load
Generator
V(z + M, t)
__z
I
I
Figure 311 Elementary section of a transmission line.
By Kirchhoff's voltage law, the summation of the voltage drops around the
central loop is given by
. ai(z, t) av(z, t)
v(z, t) = I(Z, t)R az + Laz + v(z, t) + d az
at z
Rearranging this equation, dividing it by az, and then omitting the argument (z, t),
which is understood, we obtain
av ai
=Ri+L
az at
(312)
(313)
(314)
Using Kirchhoff's current law, the summation of the currents at point B in Fig.
311 can be expressed as
av(z + az, t)
i(z, t) = v(z + az, t)G az + C az + i(z + az, t)
at
[
av(z, t) ]
= v(z, t) + az az G az
C
A a [( ) av (z, t) A ] • ( ) ai (z, t) A
+ uZ  V z, t + uZ + 1 Z, t + uZ
at az az
By rearranging the preceding equation, dividing it by az, omitting (z, t), and as
suming az equal to zero, we have
ai av
 = Gv + C
az at
Then by differentiating Eq. (312) with respect to z and Eq. (314) with respect to
t and combining the results, the final transmissionline equation in voltage form is
Sec. 3.1 TransmissionLine Equations and Solutions 63
found to be
(316)
a
2
v av a
2
v
az
2
= RGv + (RC + LG) at + LCj0 (315)
Also, by differentiating Eq. (312) with respect to t and Eq. (314) with respect to
z and combining the results, the final transmissionline equation in current form is
a
2
i ai a
2
i
az2 = RGi + (RC + LG) at + LC at
2
All these transmissionline equations are applicable to the general transient solution.
The voltage and current on the line are the functions of both position z and time t.
The instantaneous line voltage and current can be expressed as
v(z, t) = Re V(z)e
jwf
i(z, t) = Re 1(z)e
jwf
(317)
(318)
(319)
(3110)
(3111) (propagation constant) y = ex + jf3
where Re stands for "real part of." The factors V(z) aand I(z) are complex quantities
of the sinusoidal functions of position z on the line and are known as phasors. The
phasors give the magnitudes and phases of the sinusoidal function at each position of
z, and they can be expressed as
V(z) = V+e
YZ
+ V_e
Yz
where V+ and 1+ indicate complex amplitudes in the positive z direction, V and L
signify complex amplitudes in the negative z direction, ex is the attenuation constant
in nepers per unit length, and f3 is the phase constant in radians per unit length.
If we substitute jw for a/at in Eqs. (312), (314), (315), and (316) and
divide each equation by e
jwf
, the transmissionline equations in phasor form of the
frequency domain become
dV
dz
ZI (3112)
dl = YV
dz
d
2
V _ 2V
dz
2
 Y
d
2
1 _ 21
dz 2  y
in which the following substitutions have been made:
(3113)
(3114)
(3115)
Z = R + jwL
Y = G + jwC
y = vzy = ex + jf3
(ohms per unit length)
(mhos per unit length)
(propagation constant)
(3116)
(3117)
(3118)
64
Microwave Transmission Lines Chap. 3
For a lossless line, R = G = 0, and the transmissionline equations are expressed as
dV
jwLI
(3119)

dz
dI
jwCV =
(3120)
dz
d
2
V
w
2
LCV (3121)
dz
2
d
2
I
w
2
LCI (3122)
dz
2
It is interesting to note that Eqs. (3114) and (3115) for a transmission line are
similar to equations of the electric and magnetic waves, respectively. The only dif
ference is that the transmissionline equations are onedimensional.
3·1·2 Solutions of Transmission·Line Equations
The one possible solution for Eq. (3114) is
(3123)
The factors V+ and Vrepresents complex quantities. The term involving e
j
(3z
shows a wave traveling in the positive z direction, and the term with the factor e
j
(3z is
a wave going in the negative z direction. The quantity (3z is called the electrical
length of the line and is measured in radians.
Similarly, the one possible solution for Eq. (3115) is
1= Yo(Vd)'z  V_e)'z) = Y
o
(V+e
aZ
e
j
(3z  V_e
az
e
j
(3z) (3124)
In Eq. (3124) the characteristic impedance of the line is defined as
1 rz + jwL .
Zo = Yo == \I Y= G + jwC = R
o
± ]X
o
The magnitude of both voltage and current waves on the line is shown in Fig. 312.
1'1'
o
(a) Voltage wave (b) Current wave
Figure 312 Magnitude of voltage and current traveling waves.
Sec. 3.1 TransmissionLine Equations and Solutions 65
At microwave frequencies it can be seen that
R wL and G wC (3126)
By using the binomial expansion, the propagation constant can be expressed as
'Y = Y(R + jwL)(G + jwC)
= Y(jw)ZLC 1+jW
R
L)(I+]2c)
=jwYLC[(1 + + (3127)
2]wL 2]wC
= jwYLC[1 + +
2 ]wL ]wC
= + + jwYLC
Therefore the attenuation and phase constants are, respectively, given by
a = + (3128)
{3 = wYLC (3129)
Similarly, the characteristic impedance is found to be
V
R + jwL
Zo = .
G + jwC
+ +
'VC jwL jwC
= +  (3130)
= [1 + C:L  ]
From Eq. (3129) the phase velocity is
w 1
v
p
= = YLC
(3131)
The product of LC is independent of the size and separation of the conductors and
depends only on the permeability IL and permittivity of E of the insulating medium.
If a lossless transmission line used for microwave frequencies has an air dielectric
and contains no ferromagnetic materials, freespace parameters can be assumed.
66 Microwave Transmission Lines Chap. 3
(3132)
(3133)
Thus the numerical value of l/vLC for airinsulated conductors is approximately
equal to the velocity of light in vacuum. That is,
1 1
v =  =  = c = 3 X 108 mls
p vLC
When the dielectric of a lossy microwave transmission line is not air, the phase ve
locity is smaller than the velocity of light in vacuum and is given by
I c
In general, the relative phase velocity factory can be defined as
y, 1 . _ actual phase velocity
e OCIty lactor  I' f l' h .
ve OCIty 0 Ig t In vacuum
v. I
v ==
r C
(3134)
A lowloss transmission line filled only with dielectric medium, such as a coaxial
line with solid dielectric between conductors, has a velocity factor on the order of
about 0.65.
Example 311: Line Characteristic Impedance and Propagation Constant
A transmission line has the following parameters:
R = 2 Wm
L = 8 nH/m
G = 0.5 mmho/m
C = 0.23 pF
f = 1 GHz
Calculate: (a) the characteristic impedance; (b) the propagation constant.
Solution
a. From Eq. (3125) the line characteristic impedance is
..JR + jwL I 2 + j27T X 10
9
X 8 X 10
9
Zo = G + jwC = \j 0.5 x 10 3 + j27T X 10
9
x 0.23 X 10
12
_ I _If!. ,l(l0 _ .
 \j 15.29 x 104/70.91°   179.44 + )26.50
b. From Eq. (3118) the propagation constant is
l' = Y(R + jwL)(G + jwC) = Y(50.31/87.72°)(l5.29 x 10
4
/70.91°)
= Y769.24 x 10
4
/158.63°
= 0.2774/79.31° = 0.051 + jO.273
Sec. 3.2 Reflection Coefficient and Transmission Coefficient 67
3·2 REFLECTION COEFFICIENT AND TRANSMISSION
COEFFICIENT
3·2·1 Reflection Coefficient
In the analysis of the solutions of transmissionline equations in Section 31, the
traveling wave along the line contains two components: one traveling in the positive
z direction and the other traveling the negative z direction. If the load impedance is
equal to the line characteristic impedance, however, the reflected traveling wave
does not exist.
Figure 321 shows a transmission line terminated in an impedance Zf. It is
usually more convenient to start solving the transmissionline problem from the re
ceiving rather than the sending end, since the voltagetocurrent relationship at the
load point is fixed by the load impedance. The incident voltage and current waves
traveling along the transmission line are given by
v = V+e
Yz
+ V_e+
Yz
I = I+e
Yz
+ Le+
Yz
(321)
(322)
(323)
(325)
in which the current wave can be expressed in terms of the voltage by
V V
I = .:!:...e
YZ
 e
YZ
Zo Zo
If the line has a length of e, the voltage and current at the receiving end become
V
f
= V+e
yf
+ V_eyf (324)
1
If = (V+e
Yf
 V_eYf)
Zo
The ratio of the voltage to the current at the receiving end is the load impedance.
That is,
(326)
Zg
1+
1_

v+ Zo
v_

Z2
Sending Receiving
end end
o.
Q
.0
0
•
z d
•
0
Figure 321 Transmission line terminated in a load impedance.
68 Microwave Transmission Lines Chap. 3
The reflection coefficient, which is designated by r (gamma), is defined as
fl
· ffi . reflected voltage or current
Re ectlOn coe Clent == ....::::....
IncIdent voltage or current
(327)
If Eq. (326) is solved for the ratio of the reflected voltage at the receiving end,
which is V_eye, to the incident voltage at the receiving end, which is V+e
ye
, the re
sult is the reflection coefficient at the receiving end:
V_eye Ze  Zo
r
e
= V+e ye = Ze + Zo (328)
If the load impedance and/or the characteristic impedance are complex quantities, as
is usually the case, the reflection coefficient is generally a complex quantity that can
be expressed as
r
e
= jr
e
le
J8e
(329)
where IreI is the magnitude and never greater than unitythat is, IreI :::; 1. Note
that Oe is the phase angle between the incident and reflected voltages at the receiving
end. It is usually called the phase angle of the reflection coefficient.
The general solution of the reflection coefficient at any point on the line, then,
corresponds to the incident and reflected waves at that point, each attenuated in the
direction of its own progress along the line. The generalized reflection coefficient is
defined as
(3210)
(3211)
From Fig. 321 let z = e  d. Then the reflection coefficient at some point located
a distance d from the receiving end is
V_ey(ed) V_eye
r = = e
2yd
= r e
2yd
d V+ey(edl V+e
ye
e
Next, the reflection coefficient at that point can be expressed In terms of the
reflection coefficient at the receiving end as
(3212)
This is a very useful equation for determining the reflection coefficient at any point
along the line. For a lossy line, both the magnitude and phase of the reflection
coefficient are changing in an inwardspiral way as shown in Fig. 322. For a loss
less line, a = 0, the magnitude of the reflection coefficient remains constant, and
only the phase of r is changing circularly toward the generator with an angle of
2f3d as shown in Fig. 323.
It is evident that r
e
will be zero and there will be no reflection from the re
ceiving end when the terminating impedance is equal to the characteristic impedance
Sec. 3.2 Reflection Coefficient and Transmission Coefficient 69
Figure 322 Reflection coefficient for
lossy line.
I r1= 1
I
I
I
\
\
\
\
\
\.
"
'
'..
'

Figure 323 Reflection coefficient for
lossless line.
(3213)
of the line. Thus a terminating impedance that differs from the characteristic
impedance will create a reflected wave traveling toward the source from the termina
tion. The reflection, upon reaching the sending end, will itself be reflected if the
source impedance is different from the line characteristic impedance at the send
ing end.
3·2·2 Transmission Coefficient
A transmission line terminated in its characteristic impedance Zo is called a properly
terminated line. Otherwise it is called an improperly terminated line. As described
earlier, there is a reflection coefficient r at any point along an improperly termi
nated line. According to the principle of conservation of energy, the incident power
minus the reflected power must be equal to the power transmitted to the load. This
can be expressed as
1  r ~ = Zo T
2
Ze
Equation (3213) will be verified later. The letter T represents the transmission
coefficient, which is defined as
70 Microwave Transmission Lines Chap. 3
(3214)
T == transmitted voltage or current = Vtr = ~
incident voltage or current Vine line
Figure 324 shows the transmission of power along a transmission line where Pine is
the incident power, P
ref
the reflected power, and P
tr
the transmitted power.
Load
(3215)
(3216)
(3217)
(3218)
I"I ..      Q     ~ I
0.. z
Figure 324 Power transmission on a line.
Let the traveling waves at the receiving end be
V+e
ye
+ V_eye = Vtre
ye
V+ e ye _ V eye = Vtr e ye
Zo Zo Ze
Multiplication of Eq. (3216) by Ze and substitution of the result in Eq. (3215)
yield
V_eye Ze  Zo
r
e
= V+e
ye
= Ze + Zo
which, in turn, on substitution back into Eq. (3215), results in
T = V
tr
= 2Z
e
V+ Ze + Zo
The power carried by the two waves in the side of the incident and reflected waves is
(3219)
(3221)
(3220)
The power carried to the load by the transmitted waves is
(V
tr
e
ae
)2
P
tr
= 2Ze
By setting Pinr = P
tr
and using Eqs. (3217) and (3218), we have
T
2
= Ze (l  rn
Zo
This relation verifies the previous statement that the transmitted power is equal to
the difference of the incident power and reflected power.
Sec. 3.3 Standing Wave and StandingWave Ratio 71
Example 321: Reflection Coefficient and Transmission Coefficient
A certain transmission line has a characteristic impedance of 75 + jO.Ol n and is ter
minated in a load impedance of 70 + j50 n. Compute (a) the reflection coefficient;
(b) the transmission coefficient. Verify: (c) the relationship shown in Eq. (3221);
(d) the transmission coefficient equals the algebraic sum of 1 plus the reflection
coefficient as shown in Eq. (2318).
Solution
a. From Eq. (3217) the reflection coefficient is
r = Ze  Zo = 70 + j50  (75 + jO.OI)
Ze + Zo 70 + j50 + (75 + jO.01)
_ 50.2
4
m.E _ f7r:.. r:..110 _ •
 153.38/19.03°   0.08 + }0.32
b. From Eq. (3218) the transmission coefficient is
T = 2Ze 2(70 + j50)
Ze + Zo 70 + j50 + (75 + jO.01)
_ ftr:.. <;to _ •
153.38/19.03°  1.l2illl.L  l.08 + }0.32
c.
T
2
= (1.12/16.51°)2 = 1.25/33.02°
Ze (1 _ P) = 70 + /50 [1  (0.33)/76.68°)2]
Zo 75 + }0.01
= x 1 10/26° = 1 25/33°
75&. . . .
Thus Eq. (3221) is verified.
d. From Eq. (2318) we obtain
T = 1.08 + jO.32 = 1 + 0.08 + jO.32 = 1 + r
3·3 STANDING WA VE AND STANDING·WAVERATIO
3·3·1 Standing Wave
The general solutions of the transmissionline equation consist of two waves traveling
in opposite directions with unequal amplitude as shown in Eqs. (3123) and
(3124). Equation (3123) can be written
= V+eaz[cos (f3z)  j sin (f3z)] + V_eaz[cos (f3z) + j sin (f3z)]
= (V+e
az
+ cos (f3z)  j(V+e
az
 V_e
az
) sin (f3z)
(331)
72 Microwave Transmission Lines Chap. 3
With no loss in generality it can be assumed that V+e
az
and V_em are real. Then
the voltagewave equation can be expressed as
This is called the equation of the voltage standing wave, where
Va = [(V+e
az
+ V_e
az
)2 cos
2
(f3z) + (V+e
az
 V_em)Z sin
2
(f3Z)]I/2
(332)
(333)
(334)
which is called the standingwave pattern of the voltage wave or the amplitude of
the standing wave, and
(
v+e
az
 V_e
az
)
c/J = arctan V  V tan (f3z)
+e az + _e
az
which is called the phase pattern of the standing wave. The maximum and minimum
values of Eq. (333) can be found as usual by differentiating the equation with re
spect to f3z and equating the result to zero. By doing so and substituting the proper
values of f3z in the equation, we find that
1. The maximum amplitude is
V
max
= V+e
az
+ V_e
az
= V+eaz(l + If I) (335)
and this occurs at f3z = n7r, where n = 0, ±l, ±2, ....
2. The minimum amplitude is
V
min
= V+e
az
 V_e
az
= V+eaz(l  If I) (336)
and this occurs at f3z = (2n  l}1T/2, where n = 0, ±l, ±2, ...
3. The distance between any two successive maxima or minima is onehalf wave
length, since
Then
f3z = n7r
mr n7r A
z =  =  = n
13 2'1T / A 2
A
ZI =
2
(n = 0, ±l, ±2, ...)
(337)
It is evident that there are no zeros in the minimum. Similarly,
I
max
= I+e
az
+ Le
az
= I+eaz(l + If I)
I
min
= 1+ e
az
 Le
az
= 1+ eaz(l  1 r I)
(338)
(339)
The standingwave patterns of two oppositely traveling waves with unequal amplitude
in lossy or lossless line are shown in Figs. 331 and 332.
A further study of Eq. (333) reveals that
1. When V+ *" °and V = 0, the standingwave pattern becomes
(3310)
Sec. 3.3 Standing Wave and StandingWave Ratio
..
'"
,€ Min
Q.
E
«
~  '  L. ....I ....L .. Z
o
73
Figure 331 Standingwave pattern in a lossy line.
o
z
Figure 332 Voltage standingwave
pattern in a lossless line.
2. When V+ = °and V '* 0, the standingwave pattern becomes
V
o
= V_e'lZ
(3311)
3. When the positive wave and the negative wave have equal amplitudes (that is,
IV+eaz 1= IV eaz I) or the magnitude of the reflection coefficient is unity, the
standingwave pattern with a zero phase is given by
V
s
= 2V+e
az
cos ({3z)
which is called a pure standing wave.
(3312)
Similarly, the equation of a pure standing wave for the current is
Is =  j2Y
o
V+e
az
sin ({3z) (3313)
Equations (3312) and (3313) show that the voltage and current standing waves
are 90° out of phase along the line. The points of zero current are called the current
nodes. The voltage nodes and current nodes are interlaced a quarter wavelength
apart.
The voltage and current may be expressed as real functions of time and space:
V
s
= (z, t) = Re[Vs(z)e
jW'
] = 2V+e
az
cos ({3z) cos (wt)
is = (z, t) = Re[Is(z)e
jWr
] = 2Y
o
V+e
az
sin ({3z) sin (wt)
The amplitudes of Eqs. (3314) and (3315) vary sinusoidally with
(3314)
(3315)
time; the
74 Microwave Transmission Lines Chap. 3
voltage is a maximum at the instant when the current is zero and vice versa. Figure
333 shows the purestandingwave patterns of the phasor of Eqs. (3312) and
(3313) for an openterminal line.
Figure 333 Pure standing waves of
z voltage and current.
332 StandingWave Ratio
Standing waves result from the simultaneous presence of waves traveling in opposite
directions on a transmission line. The ratio of the maximum of the standingwave
pattern to the minimum is defined as the standingwave ratio, designated by p. That
IS,
S d
· . maximum voltage or current
tan Ingwave ratIo == ...:::..
mInImUm voltage or current
(3316)
The standingwave ratio results from the fact that the two travelingwave components
of Eq. (331) add in phase at some points and subtract at other points. The distance
between two successive maxima or minima is A/2. The standingwave ratio of a pure
traveling wave is unity and that of a pure standing wave is infinite. It should be noted
that since the standingwave ratios of voltage and current are identical, no distinc
tions are made between VSWR and ISWR.
When the standingwave ratio is unity, there is no reflected wave and the line is
called a fiat line. The standingwave ratio cannot be defined on a lossy line because
the standingwave pattern changes markedly from one position to another. On a low
loss line the ratio remains fairly constant, and it may be defined for some region. For
a lossless line, the ratio stays the same throughout the line.
Since the reflected wave is defined as the product of an incident wave and its
reflection coefficient, the standingwave ratio p is related to the reflection coefficient
r by
1 + Irl
p=
1  Ir\
(3317)
Sec. 3.3 Standing Wave and StandingWave Ratio 75
(3318)
and vice versa
Irl=P1
p + 1
This relation is very useful for determining the reflection coefficient from the
standingwave ratio, which is usually found from the Smith chart. The curve in Fig.
334 shows the relationship between reflection coefficient Ir I and standingwave
ratio p.
0.9
0.8
r
0.7
t:
0.6
CLl
'u
!.::
0.5
'
CLl
0
u
0.4
s:
.g
0.3
u
CLl
l;::
0.2
CLl
Cl::
0.1
0.0
I 4 5 6
VSWRp
7 8 9 10
Figure 334 SWR versus reflection coefficient.
As a result of Eq. (3317), since Ir I ::; 1, the standingwave ratio is a posi
tive real number and never less than unity, p ~ 1. From Eq. (3318) the magni
tude of the reflection coefficient is never greater than unity.
Example 331: StandingWave Ratio
A transmission line has a characteristic impedance of 50 + jO.Ol n and is terminated
in a load impedance of 73  j42.5 n. Calculate: (a) the reflection coefficient; (b) the
standingwave ratio.
Solution
a. From Eq. (328) the reflection coefficient is
r = Ze  Zo = 73  j42.5  (50 + jO.Ol) = 0377(427°
Ze + Zo 73  j42.5 + (50 + jO.Ol)· .
b. From Eq. (3317) the standingwave ratio is
1 + Ir I 1 + 0.377
p = 1  Ir I = 1  0.377 = 2.21
76 Microwave Transmission Lines Chap. 3
(34 I)
3·4 LINE IMPEDANCE AND ADMITTANCE
3·4·1 Line Impedance
The line impedance of a transmission line is the complex ratio of the voltage phasor
at any point to the current phasor at that point. It is defined as
Z == V(z)
I(z)
Figure 341 shows a diagram for a transmission line.
Sending end
I
g
Is

I

Receiving end
I, I
Q
 
+
+
Zo r V
Z
o
0..... Z
Figure 341 Diagram of a transmission line showing notations.
In general, the voltage or current along a line is the sum of the respective inci
dent wave and reflected wavethat is,
At the sending end z = 0; then Eqs. (342) and (343) become
IsZ
s
= V+ + V
I.Zo = V+  V
By solving these two equations for V+ and V, we obtain
Is (
V+ = 2" Zs + Zo)
V =  Zo)
2
Substitution of V+ and Vin Eqs. (342) and (343) yields
V = + Zo)e
Yz
+ (Zs  Zo)e
Yz
]
I = [(Zs + Zo)e
Yz
 (Zs  Zo)e
Yz
]
(342)
(343)
(344)
(345)
(346)
(347)
(348)
(349)
Sec. 3.4 Line Impedance and Admittance n
(3410)
Then the line impedance at any point z from the sending end in terms of Zs and Zo is
expressed as
Z = Z (Zs + Zo)eYz + (Zs  Zo)e
Yz
o(Zs + Zo)e
Yz
 (Zs  Zo)e
Yz
At z = € the line impedance at the receiving end in terms of Zs and Zo is given by
Z = Z (Zs + Zo)e
ye
+ (Zs  Zo)e ye (3411)
r 0 (Zs + Zo)e
ye
 (Zs  Zo)e
ye
Alternatively, the line impedance can be expressed in terms of Ze and Zoo At
z = €, V
r
= leZe; then
leZe = V+e
ye
+ V_eye
leZo = V+e
ye
 V_eye
Solving these two equations for V+ and V, we have
Ie ( ) e
V+ = "2 Ze + Zo ey
Ie ( Z)  e
V =  Ze  0 e y
2
(3412)
(3413)
(3414)
(3415)
Then substituting these results in Eqs. (342) and (343) and letting z = €  d,
we obtain
V = i[(Ze + Zo)e
yd
+ (Ze  Zo)ey'i]
I = 2 ~ o [(Ze + Zo)e
yd
 (Ze  Zo)e
yd
]
(3416)
(3417)
(3418)
(3419)
Next, the line impedance at any point from the receiving end in terms of Ze and Zo
is expressed as
Z = Z (Ze + ZO)eyd + (Ze  Zo)e
yd
o (Ze + ZO)eyd  (Ze  Zo)e
yd
The line impedance at the sending end can also be found from Eq. (3418) by let
ting d = €:
Z = Z (Ze + Zo)eye + (Ze  Zo)eye
s 0 (Ze + Zo)eye  (Ze  Zo)e
ye
It is a tedious task to solve Eqs. (3410), (3411), (3418), or (3419) for
the line impedance. These equations can be simplified by replacing the exponential
factors with either hyperbolic functions or circular functions. The hyperbolic func
tions are obtained from
e±yz = cosh ('Yz) ± sinh ('Yz) (3420)
Substitution of the hyperbolic functions in Eq. (3410) yields the line impedance at
78 Microwave Transmission Lines Chap. 3
any point from the sending end in terms of the hyperbolic functions:
Z
_
 ZoZs cosh (I'z)  Zo sinh (I'z) __ ZoZs  Zo tanh (I'z)
(3421)
Zo cosh (I'z)  Zs sinh (I'z) Zo  Zs tanh (I'z)
Similarly, substitution of the hyperbolic functions in Eq. (3418) yields the line
impedance from the receiving end in terms of the hyperbolic function:
Z = Zo Ze cosh (I'd) + Zo sinh (I'd) = Zo Ze + Zo tanh (I'd) (3422)
Zo cosh (I'd) + Ze sinh (I'd) Zo + Ze tanh (I'd)
For a lossless line, l' = j{3; and by using the following relationships between hyper
bolic and circular functions
sinh (j{3z) = j sin ({3z)
cosh (j{3z) = cos ({3z)
(3423)
(3424)
the impedance of a lossless transmission line (Zo = R
o
) can be expressed in terms of
the circular functions:
Z = R Zs cos ({3z)  jR
o
sin ({3z) = R Zs  jR
o
tan ({3z) (3425)
oRo cos ({3z)  j Zs sin ({3z) 0 R
o
 j Zs tan ({3z)
and
Z = R Ze cos ({3d) + jR
o
sin ({3d) = R Ze + jR
o
tan ({3d) (3426)
oRo cos ({3d) + jZe sin ({3d) 0 R
o
+ jZe tan ((3d)
Impedance in terms of reflection coefficient or standingwave ratio.
Rearrangement of Eq. (3418) gives the line impedancelooking at it from the re
ceiving endas
in which the following substitution is made by
r
 Ze  Zo
e 
Ze + Zo
(3427)
(3428)
From Eq. (3212) the reflection coefficient at a distance d from the receiving end is
given by
(3429)
Then the simple equation for the line impedance at a distance d from the load is ex
pressed by
The reflected coefficient is usually a complex quantity and can be written
r = Irle
N
'
(3430)
(3431)
Sec. 3.4 Line Impedance and Admittance
79
(3433)
(3435)
(3436)
(3434)
(3432))
R(d) = R
o
I _ 21 r I cos cf> + Ir1
z
21 r I sin cf>
x(d) = R
o
I _ 21 r I cos cf> + Ir IZ
()d = arctan ( ~ ) = arctan ( 2 ~ r ~ Ii; I ~ )
Since cf> = ()f  2f3d, then cf> = ()f  27T if f3d = 7T. However, COS(()f  27T) =
cos ()f and sin(()f  27T) = sin ()f; then
where Ir I = Ir
f
leZad
cf> = ()f  2f3d
The impedance variation along a lossless line can be found as follows:
Z(d) = Zo I + Irle
N
' = R
o
1+ \rl(cos cf> + j sin cf»
I Irle
l
</> I Irl(cos cf> + j sin cf»
= R(d) + jX(d) = IZ(d) le
jOd
I + 21 r Icos cf> + Ir IZ
where 1Z(d) I = R
o
I  21 r 1 cos <!> + I r lZ
I  Irl
z
(3437)
It is concluded that the impedance along a lossless line will be repeated for every in
terval at a halfwavelength distance.
Furthermore, the magnitude of a reflection coefficient Ir I is related to the
standingwave ratio p by
pl 1+lrl
Ir I =  and p = ''
p+l lIrl
(3438)
The line impedance at any location from the receiving end can be written
(p + 1) + (p  1)e
j
</>
Z = R
o
"'"'
(p + 1)  (p  1)e
j
</>
(3439)
This is a very useful equation for determining the line impedance in terms of stand
ingwave ratio p, since p can easily be measured by a detector or a standingwave
meter.
Determination of characteristic impedance. A common procedure for
determining the characteristic impedance and propagation constant of a given trans
mission line is to take two measurements:
1. Measure the sendingend impedance with the receiving end shortcircuited and
record the result:
Zsc = Zo tanh ("y f) (3440)
80 Microwave Transmission Lines Chap. 3
2. Measure the sendingend impedance with the receiving end opencircuited and
record the result:
Zoe = Zo coth ('Y t')
(3441 )
Then the characteristic impedance of the measured transmission line is given by
Zo = YZ
sc
Zoe (3442)
and the propagation constant of the line can be computed from
. 1 rz::
'Y = a + jf3 = earctanh "Vz:c
(3443)
(3444)
Normalized impedance. The normalized impedance of a transmission line
is defined as
Z 1 + r
z ==  =  = r ± jx
Zo 1  r
It should be noted that the lowercase letters are commonly designated for normal
ized quantities in describing the distributed transmissionline circuits.
An examination of Eqs. (3439), (3440), and (3444) shows that the nor
malized impedance for a lossless line has the following significant features:
1. The maximum normalized impedance is
Zmax IVmax I
Zmax = R
o
= Rol f
min
I
(3445)
(3446)
Here Zmax is a positive real value and it is equal to the standingwave ratio p at
the location of any maximum voltage on the line.
2. The minimum normalized impedance is
Zmin IVmin I 1  Ir I 1
z·== = =
1010 R
o
R
o
\ f max I 1 + Irip
Here Zmin is a positive real number also but equals the reciprocal of the
standingwave ratio at the location of any minimum voltage on the line.
3. For every interval of a halfwavelength distance along the line, Zmax or Zmin is
repeated:
Zmax(Z) = zmax(Z ± ~ )
Zmin(Z) = Zmin(Z ± ~ )
(3447)
(3448)
(3449)
4. Since V
max
and V
min
are separated by a quarterwavelength, Zmax is equal to the
reciprocal of Zmin for every A/4 separation:
zmax(z ± ~ )
Sec. 3.4 Line Impedance and Admittance 81
3·4·2 Line Admittance
When a transmission line is branched, it is better to solve the line equations for the
line voltage, current, and transmitted power in terms of admittance rather than
impedance. The characteristic admittance and the generalized admittance are
defined as
Yo = l.. = Go ± jB
o
Zo
Y = 1. = G ± jB
Z
Then the normalized admittance can be written
Y Zo I
y ==  =  =  = g ± jb
Yo Z z
(3450)
(3451)
(3452)
Example 341: Line Impedance
A lossless line has a characteristic impedance of 50 11 and is terminated in a load resis
tance of 75 11. The line is energized by a generator which has an output impedance of
5011 and an opencircuit output voltage of 30 V (rms). The line is assumed to be 2.25
wavelengths long. Determine:
a. The input impedance
b. The magnitude of the instantaneous load voltage
c. The instantaneous power delivered to the load
Solution
a. From Eq. (3426) the line that is 2.25 wavelengths long looks like a quarter
wave line. Then
21T A 1T
f3d = .  =
A 4 2
From Eq. (3426) the input impedance is
Z = Rli = (50)5 = 33.33 11
10 R
e
75
b. The reflection coefficient is
f  R
e
 R
o
e  R
e
+ R
o
75  50
75 + 50 = 0.20
Then the instantaneous voltage at the load is
V
e
= V+e
j
{3e(1 + f
e
) = 30(1 + 0.20) = 36V
c. The instantaneous power delivered to the load is
P
e
= (36)2 = 17.28 W
75
82
3·5 SMITH CHART
Microwave Transmission Lines Chap. 3
Many of the computations required to solve transmissionline problems involve the
use of rather complicated equations. The solution of such problems is tedious and
difficult because the accurate manipulation of numerous equations is necessary. To
simplify their solution, we need a graphic method of arriving at a quick answer.
A number of impedance charts have been designed to facilitate the graphic so
lution of transmissionline problems. Basically all the charts are derived from the
fundamental relationships expressed in the transmission equations. The most popular
chart is that developed by Phillip H. Smith [1]. The purpose of this section is to
present the graphic solutions of transmissionline problems by using the Smith chart.
The Smith chart consists of a plot of the normalized impedance or admittance
with the angle and magnitude of a generalized complex reflection coefficient in a
unity circle. The chart is applicable to the analysis of a lossless line as well as a lossy
line. By simple rotation of the chart, the effect of the position on the line can be de
termined. To see how a Smith chart works, consider the equation of reflection
coefficient at the load for a transmission line as shown in Eq. (328):
Ze  Zo I I· .
f = = f e
J8t
= f + Jf
e Ze + Zo e y I
(351)
Since If
e
I $ 1, the value of f
e
must lie on or within the unity circle with a radius of
1. The reflection coefficient at any other location along a line as shown in Eq.
(3212) is
(352)
which is also on or within the unity circle. Figure 351 shows circles for a constant
reflection coefficient f and constant electricallength radials f3d.
From Eqs. (3429) and (3444) the normalized impedance along a line is
given by
Z 1 + f e e ~ 2 y d
z ==
Zo 1  f
e
e
2yd
With no loss in generality, it is assumed that d = 0; then
(353)
and
1 + f
e
z=
1  f
e
Ze Re + jXe .
Zo Zo = r + JX
(354)
z  1
f
e
=  = f + JT
z + 1 r I
Substitution of Eq. (355) into Eq. (354) yields
1  f;  n
r = (I  C)2 + n
(355)
(356)
Sec. 3.5 Smith Chart
I r 1= I
83
and
rr
Figure 351 Constant r circles and
electricallength radials f3d.
2f;
x = (1  f,)2 + n
Equations (356) and (357) can be rearranged as
(
r __ r )2 + rz = (_1)2
r l+r I l+r
and
(357)
(358)
(359)
(f,  1Y+ (f;  ~ Y= GY
Equation (358) represents a family of circles in which each circle has a con
stant resistance r. The radius of any circle is 1/(1 + r), and the center of any circle
is r/(1 + r) along the real axis in the unity circle, where r varies from zero to
infinity. All constant resistance circles are plotted in Fig. 352 according to Eq.
(358) .
Equation (359) also describes a family of circles, but each of these circles
specifies a constant reactance x. The radius of any circle is (1/x), and the center of
any circle is at
1
f;=
x
(where 00 ~ x ~ 00)
All constant reactance circles are plotted in Fig. 353 according to Eq. (359).
84 Microwave Transmission Lines Chap. 3
o
Figure 352
Constant resistance r circles.
f
j
q
....
0
!
x
t
0
\
I
<;)?
x
q
Figure 353 Constant reactance x circles.
f,
Sec. 3.5 Smith Chart 85
(3510)
There are relative distance scales in wavelength along the circumference of the
Smith chart. Also, there is a phase scale specifying the angle of the reflection
coefficient. When a normalized impedance z is located on the chart, the normalized
impedance of any other location along the line can be found by use of Eq. (353):
I + f
e
e
2yd
z=
I  f
e
e
2yd
where
(3511)
The Smith chart may also be used for normalized admittance. This is evident
since
I .
Yo = Zo = Go + ]B
o
Then the normalized admi ttance is
and Y =! =G + jB
Z
(3512)
(3513)
Y Zo I .
y =  =  =  = g + ]b
Yo Z z
Figure 354 shows a Smith chart which superimposes Figs. 352 and 353
into one chart. The characteristics of the Smith chart are summarized as follows:
1. The constant r and constant x loci form two families of orthogonal circles in
the chart.
2. The constant r and constant x circles all pass through the point (L = I,
f; = 0).
3. The upper half of the diagram represents +jx.
4. The lower half of the diagram represents  jx.
5. For admittance the constant r circles become constant g circles, and the con
stant x circles become constant susceptance b circles.
6. The distance around the Smith chart once is onehalf wavelength (A/2).
7. At a point of Zmin = 1/p, there is a V
min
on the line.
8. At a point of Zmax = p, there is a V
max
on the line.
9. The horizontal radius to the right of the chart center corresponds to V
max
, [min,
Zmax, and p (SWR).
10. The horizontal radius to the left of the chart center corresponds to V
min
, [max,
Zmin, and I/p.
11. Since the normalized admittance y is a reciprocal of the normalized impedance
z, the corresponding quantities in the admittance chart are 180
0
out of phase
with those in the impedance chart.
12. The normalized impedance or admittance is repeated for every half wavelength
of distance.
13. The distances are given in wavelengths toward the generator and also toward
the load.
86
Microwave Transmission Lines
OR ADMITTANCE COORDINATES
_'_M..__:;:
Figure 354 Smith chart.
Chap. 3
(3514)
The magnitude of the reflection coefficient is related to the standingwave ratio
by the following expression:
p  1
p + 1
A Smith chart or slotted line can be used to measure a standingwave pattern directly
and then the magnitudes of the reflection coefficient, reflected power, transmitted
power, and the load impedance can be calculated from it. The use of the Smith chart
is illustrated in the following examples.
Example 351: Location Determination of Voltage Maximum and Minimum from
Load
Given the normalized load impedance Ze = 1 + j 1 and the operating wavelength
Sec. 3.5 Smith Chart
Figure 355 Diagram for Example 351.
87
,\ = 5 em, determine the first V
rnax
, first V
rnin
from the load, and the VSWR p as shown
in Fig. 355.
Solution
1. Enter Zf = 1 + j I on the chart as shown in Fig. 356.
2. Read 0.162'\ on the distance scale by drawing a dashedstraight line from the
center of the chart through the load point and intersecting the distance scale.
3. Move a distance from the point at 0.162'\ toward the generator and first stop at
the voltage maximum on the righthand real axis at 0.25'\. Then
d] (Vrnax) = (0.25  0.162)A = (0.088)(5) = 0.44 em
4. Similarly, move a distance from the point of 0.162A toward the generator and
first stop at the voltage minimum on the lefthand real axis at 0.5A. Then
d
2
(Vrnin) = (0.5  0.162)A = (0.338)(5) = 1.69 em
Figure 356 Graphic solution for
Example 351.
88
Microwave Transmission Lines Chap. 3
S. Make a standingwave circle with the center at (l, 0) and pass the circle through
the point of I + j I. The location intersected by the circle at the right portion of
the real axis indicates the SWR. This is p = 2.6.
Example 352: Impedance Determination with ShortCircuit Minima Shift
The location of a minimum instead of a maximum is usually specified because it can be
determined more accurately. Suppose that the characteristic impedance of the line R
o
is
50 n. and the SWR p = 2 when the line is loaded. When the load is shorted, the
minima shift 0.15'\ toward the load. Determine the load impedance. Figure 357
shows the diagram for the example.
\f\!\iSho,ted
I 0.15}" rLoaded
R
o
= 50 n
Figure 357 Diagram for Example 352.
Solution
1. When the line is shorted, the first voltage minimum occurs at the place of the
load as shown in Fig. 358.
0.125
SWR
circle
Figure 358 Graphic solution for
Example 352.
Sec. 3.6 Impedance Matching 89
Zg
2. When the line is loaded, the first voltage minimum shifts 0.15'\ from the load.
The distance between two successive minima is onehalf wavelength.
3. Plot a SWR circle for p = 2.
4. Move a distance of 0.15'\ from the minimum point along the distance scale
toward the load and stop at 0.15'\.
5. Draw a line from this point to the center of the chart.
6. The intersection between the line and the SWR circle is
Ze = I  jO.65
7. The load impedance is
Ze = (l  jO.65)(50) = 50  j32.5 n
3·6 IMPEDANCE MATCHING
Impedance matching is very desirable with radio frequency (RF) transmission lines.
Standing waves lead to increased losses and frequently cause the transmitter to mal
function. A line terminated in its characteristic impedance has a standingwave ratio
of unity and transmits a given power without reflection. Also, transmission
efficiency is optimum where there is no reflected power. A "flat" line is nonreso
nant; that is, its input impedance always remains at the same value Zo when the fre
quency changes.
Matching a transmission line has a special meaning, one differing from that
used in circuit theory to indicate equal impedance seen looking both directions from
a given terminal pair for maximum power transfer. In circuit theory, maximum
power transfer requires the load impedance to be equal to the complex conjugate of
the generator. This condition is sometimes referred to as a conjugate match. In
transmissionline problems matching means simply terminating the line in its charac
teristic impedance.
A common application of RF transmission lines is the one in which there is a
feeder connection between a transmitter and an antenna. Usually the input imped
ance to the antenna itself is not equal to the characteristic impedance of the line.
Furthermore, the output impedance of the transmitter may not be equal to the Zo of
the line. Matching devices are necessary to flatten the line. A complete matched
transmissionline system is shown in Fig. 361.
r1 r,
0>+'+0'0 0+.
I Matching I : Matching I
I
' device I I device I
I I I
'Iii :lli Zo iIi ,ir
I • I
ZgIZ; ZOIZo ZolZo ZR1ZR
I I I I
'10 0 I 10 O+.....J
L J L .J
Figure 361 Matched transmissionline system.
90 Microwave Transmission Lines Chap. 3
For a lowloss or lossless transmission line at radio frequency, the characteris
tic impedance Zo of the line is resistive. At every point the impedances looking in
opposite directions are conjugate. If Zo is real, it is its own conjugate. Matching can
be tried first on the load side to flatten the line; then adjustment may be made on the
transmitter side to provide maximum power transfer. At audio frequencies an iron
cored transformer is almost universally used as an impedancematching device.
Occasionally an ironcored transformer is also used at radio frequencies. In a practi
cal transmissionline system, the transmitter is ordinarily matched to the coaxial
cable for maximum power transfer. Because of the variable loads, however, an
impedancematching technique is often required at the load side.
Since the matching problems involve parallel connections on the transmission
line, it is necessary to work out the problems with admittances rather than imped
ances. The Smith chart itself can be used as a computer to convert the normalized
impedance to admittance by a rotation of 180
0
, as described earlier.
3·6·1 Single.Stub Matching
Although singlelumped inductors or capacitors can match the transmission line, it is
more common to use the susceptive properties of shortcircuited sections of trans
mission lines. Shortcircuited sections are preferable to opencircuited ones because
a good short circuit is easier to obtain than a good open circuit.
For a lossless line with Y
g
= Yo, maximum power transfer requires Y!I = Yo,
where YII is the total admittance of the line and stub looking to the right at point 11
(see Fig. 362). The stub must be located at that point on the line where the real
part of the admittance, looking toward the load, is Yo. In a normalized unit Yll must
be in the form
R
o
= 50 n
Yll = Yd ± Ys = 1
50
Z  _. _..   
Q  2 + j(2 +(3)
(361)
Figure 362 Singlestub matching for Example 361.
Sec. 3.6 Impedance Matching
91
if the stub has the same characteristic impedance as that of the line. Otherwise
(362)
The stub length is then adjusted so that its susceptance just cancels out the suscep
tance of the line at the junction.
Example 361: SingleStub Matching
A lossless line of characteristic impedance R
o
= 50 n is to be matched to a load
Ze = 50/[2 + j(2 + v'3)] n by means of a lossless shortcircuited stub. The charac
teristic impedance of the stub is 100 n. Find the stub position (closest to the load) and
length so that a match is obtained.
Solution
l. Compute the normalized load admittance and enter it on the Smith chart (see
Fig. 363).
I Ro .•r:: .
Ye =  =  = 2 + ](2 + v 3) = 2 + ]3.732
Ze Ze
2. Draw a SWR circle through the point of Ye so that the circle intersects the unity
circle at the point Yd.
Yd = 1  j2.6
Note that there are an infinite number of Yd. Take the one that allows the stub to
be attached as closely as possible to the load.
0.125
+ j5.2
0.031
0.031
j5.2
Figure 363 Graphic solution for Example 361.
92 Microwave Transmission Lines Chap. 3
3. Since the characteristic impedance of the stub is different from that of the line,
the condition for impedance matching at the junction requires
Y
ll
= Y
d
+ Y,
where Y, is the susceptance that the stub will contribute.
It is clear that the stub and the portion of the line from the load to the junc
tion are in parallel, as seen by the main line extending to the generator. The ad
mittances must be converted to normalized values for matching on the Smith
chart. Then Eq. (362) becomes
Y11Yo = YdYo + Y,Yos
(
Yo) . 100 .
y, = (Yll  Yd)  = [1  (l  j2.6)]0 = +j5.20
YOs 5
4. The distance between the load and the stub position can be calculated from the
distance scale as
d = (0.302  0.215)'\ = 0.087,\
5. Since the stub contributes a susceptance of +j5.20, enter +j5.20 on the chart
and determine the required distance e from the shortcircuited end (z = 0,
Y = 00), which corresponds to the right side of the real axis on the chart, by
transversing the chart toward the generator until the point of +j5.20 is reached.
Then
e= (0.50  0.031),\ = 0.469,\
When a line is matched at the junction, there will be no standing wave in the line
from the stub to the generator.
6. If an inductive stub is required,
Y ~ = 1 + j2.6
the susceptance of the stub will be
Y; =  j5.2
7. The position of the stub from the load is
d' = [0.50  (0.215  0.198)]'\ = 0.483,\
and the length of the shortcircuited stub is
£' = 0.031'\
362 DoubleStub Matching
Since singlestub matching is sometimes impractical because the stub cannot be
placed physically in the ideal location, doublestub matching is needed. Doublestub
devices consist of two shortcircuited stubs connected in parallel with a fixed length
between them. The length of the fixed section is usually oneeighth, threeeighths,
or fiveeighths of a wavelength. The stub that is nearest the load is used to adjust the
susceptance and is located at a fixed wavelength from the constant conductance
Sec. 3.6 Impedance Matching 93
unity circle (g = 1) on an appropriate constantstandingwaveratio circle. Then the
admittance of the line at the second stub as shown in Fig. 364 is
Yzz = Yd2 ± ys2 = 1
Y
22
= Y
d2
± Y
s2
= Yo
(363)
(364)
In these two equations it is assumed that the stubs and the main line have the same
characteristic admittance. If the positions and lengths of the stubs are chosen prop
erly, there will be no standing wave on the line to the left of the second stub mea
sured from the load.
R
o
= 50 n •
Yn
2 I
ZQ = 100 +jlOO
Figure 364 Doublestub matching for Example 362.
Example 362: DoubleStub Matching
The terminating impedance Ze is 100 + j 100 fl, and the characteristic impedance Zo
of the line and stub is 50 fl. The first stub is placed at OAOA away from the load. The
spacing between the two stubs is ~ A. Determine the length of the shortcircuited stubs
when the match is achieved. What terminations are forbidden for matching the line by
the doublestub device?
Solution
1. Compute the normalized load impedance Ze and enter it on the chart as shown in
Fig. 365:
100 + j 100
Ze = =5='0' = 2 + j 2
2. Plot a SWR p circle and read the normalized load admittance 180
0
out of phase
with Ze on the SWR circle:
Ye = 0.25  jO.25
3. Draw the spacing circle of ~ eby rotating the constantconductance unity circle
94
Spacing
circle
Microwave Transmission Lines
+jO.97
0.123
Figure 365 Graphic solution for Example 362.
Chap. 3
Forbidden
area
(g = I) through a phase angle of 2f3d = 2 f 3 ~ A = ~ 1 T toward the load. Now yll
must be on this spacing circle, since Yd2 will be on the g = I circle (YII and Yd2
are ~ A apart).
4. Move Yf for a distance of 0.401.. from 0.458 to 0.358 along the SWR p circle
toward the generator and read Ydl on the chart:
Ydl = 0.55  j 1.08
5. There are two possible solutions for YII' They can be found by carrying Ydl along
the constantconductance (g = 0.55) circle that intersects the spacing circle at
two points:
YII = 0.55  jO.11
Y;! = 0.55  j 1.88
6. At the junction II,
YII = Ydl + Y,!
Sec. 3.6 Impedance Matching
Then
Ysl = Yll  Ydl = (0.55  jO.Il)  (0.55  j 1.08) = +jO.97
Similarly,
Y;I =  j.080
7. The lengths of stub I are found as
£1 = (0.25 + 0.123)A = 0.373A
£; = (0.25  0.107)A = 0.143A
95
8. The ~ A section of line transforms Yll to Y<l2 and YII to Ydz along their constant
standingwave circles, respectively. That is,
Y<l2 = I  jO.61
Ydz = I + j2.60
9. Then stub 2 must contribute
YsZ = +jO.61
Y;z =  j2.60
10. The lengths of stub 2 are found as
£z = (0.25 + 0.087)A = 0.337A
£:1 = (0.308  0.25)A = 0.058A
11. It can be seen from Fig. 365 that a normalized admittance Ye located inside the
hatched area cannot be brought to lie on the locus of Yll or Y; I for a possible
match by the parallel connection of any shortcircuited stub because the spacing
circle and g = 2 circle are mutually tangent. Thus the area of a g = 2 circle is
called the forbidden region of the normalized load admittance for possible match.
Normally the solution of a doublestubmatching problem can be worked out
backward from the load toward the generator, since the load is known and the distance
of the first stub away from the load can be arbitrarily chosen. In quite a few practical
matching problems, however, some stubs have a different Zo from that of the line, the
length of a stub may be fixed, and so on. So it is hard to describe a definite procedure
for solving the doublematching problems.
The flexible coaxial lines are available in different types. Their diameters vary
from 0.635 cm (0.25 in.) to about 2.54 cm (l in.), depending on the power require
ment. In some coaxial cables, the inner conductor is stranded or a solid wire, but the
outer conductor is a single braid or double. The dielectric material used in these
coaxial lines is polyethylene, which has low loss at radio frequencies. Particularly
for the RG series, the dielectric is either solid or foam polyethylene. The loss per
unit length for foam polyethylene is even appreciably less than the equivalent solid
polyethylene.
96 Microwave Transmission Lines Chap. 3
3·7 MICROWAVE COAXIAL CONNECTORS
For highfrequency operation the average circumference of a coaxial cable must be
limited to about one wavelength, in order to reduce multimodal propagation and
eliminate erratic reflection coefficients, power losses, and signal distortion. The
standardization of coaxial connectors during World War II was mandatory for mi
crowave operation to maintain a low reflection coefficient or a low voltage standing
wave ratio (VSWR). Since that time many modifications and new designs for mi
crowave connectors have been proposed and developed. Seven types of microwave
coaxial connectors are described below (see Fig. 371; TNC is not shown).
1. APC3.5 The APC3.5 (Amphenol Precision Connector3.5 mm) was
originally developed by HewlettPackard, but is now manufactured by Amphe
no!. The connector provides repeatable connections and has a very low voltage
standingwave ratio (VSWR). Either the male or female end of this 50ohm
connector can mate with the opposite type of SMA connector. The APC3.5
connector can work at frequencies up to 34 GHz.
2. APC7 The APC7 (Amphenol Precision Connector7 mm) was also devel
oped by HewlettPackard in the mid 1960s, but it was recently improved and is
now manufactured by Ampheno!. The connector provides a coupling mecha
nism without male or female distinction and is the most repeatable connecting
device used for very accurate SOohm measurement applications. Its VSWR is
extremely low, in the range of 1.02 to 18 GHz. Maury Microwave also has an
MPC series available.
3. BNC The BNC (Bayonet Navy Connector) was originally designed for mili
tary system applications during World War II. The connector operates very
well at frequencies up to about 4 GHz; beyond that it tends to radiate electro
magnetic energy. The BNC can accept flexible cables with diameters of up to
6.35 mm (0.25 in.) and characteristic impedance of 50 to 75 ohms. It is now
the most commonly used connector for frequencies under I GHz.
4. SMA The SMA (SubMiniature A) connector was originally designed by
Bendix Scintilla Corporation, but it has been manufactured by OmniSpectra
Inc. (as the OSM connector) and many other electronic companies. The main
application of SMA connectors is on components for microwave systems. The
connector is seldom used above 24 GHz because of higherorder modes.
5. SMC The SMC (SubMiniature C) is a 50ohm connector that is smaller
than the SMA. The connector is manufactured by Sealectro Corporation and
can accept flexible cables with diameters of up to 3.17 mm (0.125 in.) for a
frequency range of up to 7 GHz.
6. TNC The TNC (Threaded Navy Connector) is merely a threaded BNC. The
function of the thread is to stop radiation at higher frequencies, so that the con
nector can work at frequencies up to 12 GHz.
7. Type N The Type N (Navy) connector was originally designed for military
systems during World War II and is the most popular measurement connector
Sec. 3.7
Microwave C .
oaxlal C
onnectors
97'
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
Old
nut
SMA female
Type N female
.. ',.:,' :.)..• 0 :?
'.. ... ... .. ' ,,'
tW' ' ' '
(b) APe?
(d) SMA.
New cOUPling nut
SMA male
TypeN male
APe3,s male
fO TYpeN
Microwave
cOaxial connect
ors,
8l'¥C female
S.Mcmale
(plug)
FigUre 3.71
(a) Al'C3,s
(c) BNC
(e) SMC
BNe female
BNCmale
A.PC3.S
male
98
Microwave Transmission Lines Chap. 3
for the frequency range of 1 to 18 GHz. It is 50 or 75ohm connector and its
VSWR is extremely low, less than 1.0?
REFERENCES
[1] SMITH, P. H.
Transmission line calculator. Electronics, 12, 2931 (1939).
An improved transmission line calculator. Electronics, 17, 130133 and 318325
(1944).
Smith ChartsTheir Development and Use. A series published at intervals by the Kay
Electric Co.; No.1 is dated March 1962, and No.9 is dated December 1966.
SUGGESTED READINGS
BROWN, R. G., et aI., Lines, Waves, and Antennas, 2nd ed. John Wiley & Sons, New York,
1970.
DWORSKY, L. N., Modern Transmission Line Theory and Applications. John Wiley & Sons,
New York, 1979.
LIAO, S. 'I.., Engineering Applications of Electromagnetic Theory. \\Jest ~ u b \ i s b i n g eompany,
St. Paul, Minn., 1988.
RIZZI, PETER A., Microwave Engineering: Passive Circuits. PrenticeHall, Inc., Englewood
Cliffs, N.J., 1988.
SINNEMA, W., Electronic Transmission Technology: Lines, Waves, and Applications. Prentice
Hall, Inc., Englewood Cliffs, N. 1., 1979.
PROBLEMS
31. A transmission line has a characteristic impedance of 300 n and is terminated in a load
of 300  j300 n. The propagation constant of the line is 0.054 + j3.53 per meter.
Determine:
a. The reflection coefficient at the load
b. The transition coefficient at the load
c. The reflection coefficient at a point 2 m away from the load
32. A lossless transmission line has a characteristic impedance of 50 n and is terminated in
a load of 100 n. The magnitude of a voltage wave incident to the line is 20 V (rms).
Determine:
a. The VSWR on the line
b. The maximum voltage V
max
and minimum voltage V
min
on the line
c. The maximum current I
max
and minimum current I
min
on the line
d. The power transmitted by the line
33. A lossless line has a characteristic impedance of 75 n and is terminated in a load of
Problems 99
300 O. The line is energized by a generator which has an opencircuit output voltage of
20 V (rms) and output impedance of 75 O. The line is assumed to be 2i wavelengths
long.
a. Find the sendingend impedance.
b. Determine the magnitude of the receivingend voltage.
c. Calculate the receivingend power at the load.
34. A lossless transmission line has a characteristic impedance of 100 0 and is terminated
in a load of 75 O. The line is 0.75 wavelength long. Determine:
a. The sendingend impedance
b. The reactance which, if connected across the sending end of the line, will make the
input impedance a pure resistance
35. A coaxial line with a solid polyethylene dielectric is to be used at a frequency of
3 GHz. Its characteristic impedance 2
0
is 50 0 and its attenuation constant a is
0.0156 Np/m. The velocity factor which is defined as the ratio of phase velocity over
the velocity of light in free space is 0.660. The line is 100 m long and is terminated in
its characteristic impedance. A generator, which has an opencircuit voltage of 50 V
(rms) and an internal impedance of 50 0, is connected to the sending end of the line.
The frequency is tuned at 3 GHz. Compute:
a. The magnitude of the sendingend voltage and of the receivingend voltage
b. The sendingend power and the receivingend power
c. The wavelengths of the line
36. An openwire transmission line has R = 5 O/m, L = 5.2 x 1O
8
H/m, G =
6.2 X 1O
3
mholm, and C = 2.13 x 1O
IO
F/m. The signal frequency is 4 GHz. Cal
culate:
a. The characteristic impedance of the line in both rectangular form and polar form
b. The propagation constant of the wave along the line
c. The normalized impedance of a load 100 + j 100
d. The reflection coefficient at the load
e. The sendingend impedance if the line is assumed a quarterwavelength long
3·7. A quarterwave lossless line has a characteristic impedance of 50 0 and is terminated
in a load of 100 O. The line is energized by a generator of 20 V (rms) with an internal
resistance of 50 O. Calculate:
a. The sendingend impedance
b. The magnitude of the receivingend voltage
c. The power delivered to the load.
38. A lossless transmission line is terminated in an open circuit. The sending end is ener
gized by a generator which has an opencircuit output voltage of V
g
(rms) and an inter
val impedance equal to the characteristic impedance of the line. Show that the sending
end voltage is equal to the output voltage of the generator.
39. A lossless transmission line has a characteristic impedance of 300 0 and is operated at
a frequency of 10 GHz. The observed standingwave ratio on the line is 5.0. It is pro
posed to use a shortcircuited stub to match a pure resistor load to the line.
a. Determine the distance in centimeters from the load to the place where the stub
should be located. (Two possible solutions.)
b. Find the length of the stub in centimeters. (Two possible solutions.)
3·10. A lossless line has a characteristic impedance of 50 0 and is loaded by 60  j60 O.
One stub is at the load, and the other is 3A/8 distance away from the first.
a. Determine the lengths in wavelength of the two shortcircuited stubs when a match
is achieved.
100 Microwave Transmission Lines Chap. 3
b. Locate and crosshatch the forbidden region of the normalized admittance for possi
ble match.
311. A lossless transmission line has a characteristic impedance of 300 n and is terminated
by an impedance 2/. The observed standingwave ratio on the line is 6, and the dis
tance of the first voltage minimum from the load is 0.166A.
a. Determine the load 2/.
b. Find the lengths in A of two shorted stubs, one at the load and one at A/4 from the
load, which are required to match the load to the line.
312. A singlestub tuner is to match a lossless line of 400 n to a load of 800  j300 n.
The frequency is 3 GHz.
a. Find the distance in meters from the load to the tuning stub.
b. Determine the length in meters of the shortcircuited stub.
313. A halfwavedipole antenna has a drivingpoint impedance of 73 + j42.5 n. A loss
less transmission line connected to a TV set has a characteristic impedance of 300 n.
The problem is to design a shorted stub with the same characteristic impedance to
match the antenna to the line. The stub may be placed at a location closest to the an
tenna. The reception is assumed to be Channel 83 at a frequency of 0.88525 GHz.
a. Determine the susceptance contributed by the stub.
b. Calculate the length in centimeters of the stub.
c. Find the distance in centimeters between the antenna and the point where the stub
is placed. [Note: There are two sets of solutions.]
314. A lossless transmission line has a characteristic impedance of 100 n and is loaded by
100 + j 100 n. A single shorted stub with the same characteristic impedance is in
serted at A/4 from the load to match the line. The load current is measured to be 2 A.
The length of the stub is A/8.
a. Determine the magnitude and the phase of the voltage across the stub location.
b. Find the magnitude and the phase of the current flowing through the end of the
stub.
315. A doublestub matching line is shown in Fig. P315. The characteristic resistances of
the lossless line and stubs are 100 n, respectively. The spacing between the two stubs
is A/8. The load is 100 + j 100. One stub is located at the load. Determine:
a. The reactances contributed by the stub
b. The lengths of the two shorted doublestub tuners [Note: There are two sets of so
lutions.]
R
o
= 50 .n
Figure P31S
Problems 101
3·16. A lossless transmission line has a characteristic impedance 2
0
of 100 n and is loaded
by an unknown impedance. Its voltage standingwave ratio is 4 and the first voltage
maximum is A/8 from the load.
a. Find the load impedance.
b. To match the load to the line, a quarter section of a different line with a characteris
tic impedance 2
01
< 2
0
is to be inserted somewhere between (in cascade with) the
load and the original line. Determine the minimum distance between the load and
matching section, and calculate the characteristic impedance ZL, in terms of 2
0
.
3·17. A lossless transmission line has a characteristic impedance of 100 n and is loaded by
an unknown impedance. The standingwave ratio along the line is 2. The first two
voltage minima are located at z = 10 and  35 cm from the load where z = o.
Determine the load impedance.
318. A matched transmission line is shown in Fig. P318.
a. Find e, and d which provide a proper match.
b. With the line and load properly matched determine the VSWR on the section of
line between the stubs.
R
o
= 100 Q
Figure P3·18
Z, = 100 + jlOO
Chapter 4
Microwave Waveguides
and Components
4·0 INTRODUCTION
In general, a waveguide consists of a hollow metallic tube of a rectangular or circu
lar shape used to guide an electromagnetic wave. Waveguides are used principally at
frequencies in the microwave range; inconveniently large guides would be required
to transmit radiofrequency power at longer wavelengths. At frequency range X band
from 8.00 to 12.0 GHz, for example, the U.S. standard rectangular waveguide WR
90 has an inner width of 2.286 cm (0.9 in.) and an inner height of 1.016 cm
(0.4 in.); but its outside dimensions are 2.54 cm (l in.) wide and 1.27 cm (0.5 in.)
high [1].
In waveguides the electric and magnetic fields are confined to the space within
the guides. Thus no power is lost through radiation, and even the dielectric loss is
negligible, since the guides are normally airfilled. However, there is some power
loss as heat in the walls of the guides, but the loss is very small.
It is possible to propagate several modes of electromagnetic waves within a
waveguide. These modes correspond to solutions of Maxwell's equations for particu
lar waveguides. A given waveguide has a definite cutoff frequency for each allowed
mode. If the frequency of the impressed signal is above the cutoff frequency for a
given mode, the electromagnetic energy can be transmitted through the guide for
that particular mode without attenuation. Otherwise the electromagnetic energy
with a frequency below the cutoff frequency for that particular mode will be attenu
ated to a negligible value in a relatively short distance. The dominant mode in a par
ticular guide is the mode having the lowest cutofffrequency. It is advisable to choose
the dimensions of a guide in such a way that, for a given input signal, only the en
ergy of the dominant mode can be transmitted through the guide.
The process of solving the waveguide problems may involve three steps:
102
Sec. 4.1 Rectangular Waveguides 103
1. The desired wave equations are written in the form of either rectangular or
cylindrical coordinate systems suitable to the problem at hand.
2. The boundary conditions are then applied to the wave equations set up in
step 1.
3. The resultant equations usually are in the form of partial differential equations
in either time or frequency domain. They can be solved by using the proper
method.
4·1 RECTANGULAR WAVEGUIDES
A rectangular waveguide is a hollow metallic tube with a rectangular cross section.
The conducting walls of the guide confine the electromagnetic fields and thereby
guide the electromagnetic wave. A number of distinct field configurations or modes
can exist in waveguides. When the waves travel longitudinally down the guide, the
plane waves are reflected from wall to wall. This process results in a component of
either electric or magnetic field in the direction of propagation of the resultant wave;
therefore the wave is no longer a transverse electromagnetic (TEM) wave. Figure
411 shows that any uniform plane wave in a lossless guide may be resolved into
TE and TM waves.
z
,
Figure 411 Plane wave reflected in a
waveguide..
(41 1)
It is clear that when the wavelength A is in the direction of propagation of the
incident wave, there will be one component An in the direction normal to the
reflecting plane and another A
p
parallel to the plane. These components are
A
A
n
=
cos ()
A =_A_
p sin ()
(412)
where () = angle of incidence
A = wavelength of the impressed signal in unbounded medium
A plane wave in a waveguide resolves into two components: one standing wave
in the direction normal to the reflecting walls of the guide and one traveling wave in
the direction parallel to the reflecting walls. In lossless waveguides the modes may
be classified as either transverse electric (TE) mode or transverse magnetic (TM)
mode. In rectangular guides the modes are designated TE
mn
or TM
mn
• The integer m
104 Microwave Waveguides and Components Chap. 4
denotes the number of half waves of electric or magnetic intensity in the x direction,
and n is the number of half waves in the y direction if the propagation of the wave is
assumed in the positive z direction.
4·1·1 Solutions of Wave Equations in Rectangular
Coordinates
As stated previously, there are timedomain and frequencydomain solutions for
each wave equation. However, for the simplicity of the solution to the wave equation
in three dimensions plus a timevarying variable, only the sinusoidal steadystate or
the frequencydomain solution will be given. A rectangular coordinate system is
shown in Fig. 412.
/
/
/
/
/
Yl
f,.<(
o x
Figure 412 Rectangular coordinates.
The electric and magnetic wave equations in frequency domain in Eqs.
(2120) and (2121) are given by
V
2
E = "f2E (413)
V
2
H = "f2H (414)
where'}' = YjwJ.L(a + jw€.) = a + jf3. These are called the vector wave equa
tions.
Rectangular coordinates are the usual righthand system. The rectangular com
ponents of E or H satisfy the complex scalar wave equation or Helmholtz equation
(416)
(415)
V2ljJ = '}'2ljJ
The Helmholtz equation in rectangular coordinates is
iJ2ljJ iJ2ljJ iJ2ljJ
iJx2 + iJ
y
2 + iJ
z
2 = '}'2ljJ
This is a linear and inhomogeneous partial differential equation in three di
mensions. By the method of separation of variables, the solution is assumed in the
form of
ljJ = X(x)Y(y)Z(z)
where X(x) = a function of the x coordinate only
y (y) = a function of the y coordinate only
Z(z) = a function of the z coordinate only
(417)
Sec. 4.1 Rectangular Waveguides 105
(418)
Substitution of Eq. (417) in Eq. (416) and division of the resultant by Eq.
(417) yield
1 d
2
X 1 d
2
y 1 d
2
Z
  +   +   = y
2
X dx
2
Y dy
2
Z dz
2
Since the sum of the three terms on the lefthand side is a constant and each term is
independently variable, it follows that each term must be equal to a constant.
Let the three terms be k;, k;, and k;, respectively; then the separation equation
is given by
k;  k;  k; = y
2
The general solution of each differential equation in Eq. (418)
d
2
X
k;X
dx
2
 k ~ Y
will be in the form of
X = A sin (kxx) + B cos (kxx)
y = C sin (kyY) + D cos (kyY)
Z = E sin (kzz) + F cos (kzz)
The total solution of the Helmholtz equation in rectangular coordinates is
(419)
(4110)
(4111)
(4112)
(4113)
(4114)
(4115)
ljJ = [A sin (kxx) + B cos (kxx)][C sin (kyY) + D cos (kyY)]
X [E sin (kzz) + F cos (kzz)] (4116)
The propagation of the wave in the guide is conventionally assumed in the positive z
direction. It should be noted that the propagation constant Y8 in the guide differs
from the intrinsic propagation constant y of the dielectric. Let
(4117)
where k
c
= v'k; + k; is usually called the cutoff wave number. For a lossless
dielectric, y2 = w
2
fL€. Then
Y8 = ±VW
2
fL€  k ~ (4118)
There are three cases for the propagation constant Y8 in the waveguide.
Case I. There will be no wave propagation (evanescence) in the guide if
W ~ f  L € = k ~ and Y8 = O. This is the critical condition for cutoff propagation. The
cutoff frequency is expressed as
106
Microwave Waveguides and Components
Chap. 4
(4119)
Case II. The wave will be propagating in the guide if w
2
J.tf. > and
(4120)
This means that the operating frequency must be above the cutoff frequency in order
for a wave to propagate in the guide.
Case III. The wave will be attenuated if w
2
J.tf. < and
Yg = ±cxg = 1
(4121)
This means that if the operating frequency is below the cutoff frequency, the wave
will decay exponentially with respect to a factor of  CXgZ and there will be no wave
propagation because the propagation constant is a real quantity. Therefore the solu
tion to the Helmholtz equation in rectangular coordinates is given by
l/J = [A sin (kxx) + B cos (kxx)][C sin (kyY) + D cos (kyy)]ejl3gZ
4·1·2 TE Modes in Rectangular Waveguides
(4122)
It has been previously assumed that the waves are propagating in the positive z di
rection in the waveguide. Figure 413 shows the coordinates of a rectangular
waveguide.
x
'1
r f/:,,/
b //
lll:...../ .v _
o a
Figure 413 Coordinates of a rectan
gular guide.
The TE
mn
modes in a rectangular guide are characterized by E
z
= O. In other
words, the z component of the magnetic field, Hz, must exist in order to have energy
transmission in the guide. Consequently, from a given Helmholtz equation,
V
2
H
z
= "12Hz (4123)
a solution in the form of
Sec. 4.1 Rectangular Waveguides 107
Hz = [Am sin (:x) + B
m
cos (:x)] x [en sin (n:
y
) + Dncos (n:
y
) ] e  j ~ , Z
(4124)
will be determined in accordance with the given boundary conditions, where
k
x
= tmr/a and k
y
= mr/b are replaced. For a lossless dielectric, Maxwell's curl
equations in frequency domain are
v x E =  jWfLH
V x H = jw€E
In rectangular coordinates, their components are
aE
z
_ aE
y
= _ jWfLH
x
ay az
aEx aEz . H
   = ]wfL
az ax y
aEy aE
x
.
   =  ]wfLH
z
ax ay
aH
z
_ aH
y
= jw€E
x
ay az
aH
x
aH
z
.
~  ax =]w€E
y
aH
y
_ aH
x
= jw€E
z
ax ay
(4125)
(4126)
(4127)
(4128)
(4129)
(4130)
(4131)
(4132)
With the substitution a/az =  jf3g and E
z
= 0, the foregoing equations are sim
plified to
f3
g
Ey = wfLH
x
f3
g
E
x
= wfLHy
aEy aE
z
.
   =  ]wfLH
z
ax ay
aH
z
;a H .
 + ]fJg y = ]w€E
x
ay
l;a H  aH
z
=]'w€E
fJg x ax y
aH
y
_ aH
x
= 0
ax ay
(4133)
(4134)
(4135)
(4136)
(4137)
(4138)
Solving these six equations for Ex, Ey, H
x
, and Hy in terms of Hz will give the TE
108 Microwave Waveguides and Components Chap. 4
mode field equations in rectangular waveguides as
E =  jwf.L aHz
x k ~ ay
E =jWf.L aH
z
y k ~ ax
E
z
= 0
H =  jf3g aHz
x k! ax
H =  jf3g aBz
y k ~ ay
Hz = Eq. (4124)
(4139)
(4140)
(4141)
(4142)
(4143)
(4144)
where k ~ = w
2
f.LE  f 3 ~ has been replaced.
Differentiating Eq. (4124) with respect to x and y and then substituting the
results in Eqs. (4139) through (4143) yield a set of field equations. The boundary
conditions are applied to the newly found field equations in such a manner that either
the tangent E field or the normal H field vanishes at the surface of the conductor.
Since Ex = 0, then aHzlay = 0 at y = 0, b. Hence en = O. Since E
y
= 0, then
dHz}i}x =\) at x =\), a. \\e\\ce Am =Q.
It is generally concluded that the normal derivative of Hz must vanish at the
conducting surfacesthat is,
aH
z
= 0
an
(4145)
(4148)
(4147)
(4146)
at the guide walls. Therefore the magnetic field in the positive z direction is given by
(
m7Tx) (n7TY).
Hz = Hoz cos a cos b e
Jl3gZ
where Hoz is the amplitude constant.
Substitution of Eq. (4146) in Eqs. (4139) through (4143) yields the TE
mn
field equations in rectangular waveguides as
Ex = E
ox
cos (m;x) sin (n;y)e
J
{3gZ
. (m7Tx) (n7T
Y
).
E
y
= EOy sm ;; cos b e
J
{3gZ
E
z
= 0
H
x
= H
ox
sin (m;x) cos (n;y)e
J
{3gZ
By = HOy cos (m;x) sin (n;y)e
J
{3gZ
(4149)
(4150)
(4151)
Sec. 4.1 Rectangular Waveguides
Hz = Eq. (4146)
109
(4152)
where m = 0, 1, 2, .
n = 0, 1,2, .
m = n = 0 excepted
The cutoff wave number kc, as defined by Eq. (4117) for the TE
mn
modes, is given
by
(4153)
where a and b are in meters. The cutoff frequency, as defined in Eq. (4119) for the
TE
mn
modes, is
fc = + hi (4154)
The propagation constant (or the phase constant here) f3g, as defined in Eq. (4118),
is expressed by
(4155)
The phase velocity in the positive z direction for the TE
mn
modes is shown as
w V
p
V
g
= f3g = VI  (fc/I)2 (4156)
where V
p
= is the phase velocity in an unbounded dielectric.
The characteristic wave impedance of TE
mn
modes in the guide can be derived
from Eqs. (4133) and (4134):
Ex E
y
wp, TJ ()
Zg = H
y
=  H
x
f3g VI  Ue/I)2 4157
where TJ = is the intrinsic impedance in an unbounded dielectric. The wave
length A
g
in the guide for the TE
mn
modes is given by
A = A ( )
g VI  (fc/I)2 4158
where A = vp/I is the wavelength in an unbounded dielectric.
Since the cutoff frequency shown in Eq. (4154) is a function of the modes
and guide dimensions, the physical size of the waveguide will determine the propa
gation of the modes. Table 411 tabulates the ratio of cutoff frequency of some
modes with respect to that of the dominant mode in terms of the physical dimension.
Whenever two or more modes have the same cutoff frequency, they are said to
be degenerate modes. In a rectangular guide the corresponding TE
mn
and TM
mn
modes are always degenerate. In a square guide the TE
mn
, TE
nm
, TM
mn
, and TM
nm
modes form a foursome of degeneracy. Rectangular guides ordinarily have dimen
sions of a = 2b ratio. The mode with the lowest cutoff frequency in a particular
110
Microwave Waveguides and Components Chap. 4
TABLE 4·1·1 MODES OF ('elmn/'e FOR a :2: b
Modes
///10 TEll TE
21
TE
l2
TE
22
alb TE
IO
TE
OI
TM
ll
TE
20
TE
02
TM
2l
TM
l2
TM
n
TE
30
1 1 1 1.414 2 2 2.236 2.236 2.828 3
1.5 1 1.5 1.803 2 3 2.500 3.162 3.606 3
2 I 2 2.236 2 4 2.828 4.123 4.472 3
3 I 3 3.162 2 6 3.606 6.083 6.325 3
00
I
00 00
2
00 00 00 00
3
guide is called the dominant mode. The dominant mode in a rectangular guide with
a > b is the TE
IO
mode. Each mode has a specific mode pattern (or field pattern).
It is normal for all modes to exist simultaneously in a given waveguide. The sit
uation is not very serious, however. Actually, only the dominant mode propagates,
and the higher modes near the sources or discontinuities decay very fast.
Example 411: TE
10
in Rectangular Waveguide
An airfilled rectangular waveguide of inside dimensions 7 x 3.5 cm operates in the
dominant TE
IO
mode as shown in Fig. 414.
Figure 414 Rectangular waveguide
for Example 4 1 I.
I ,z
I /
I /
~    
/
/
/
Y1
t f/.,.t.I
3.5 cm //
L "/ .Y _
017 cm1 x
a. Find the cutoff frequency.
b. Determine the phase velocity of the wave in the guide at a frequency of 3.5 GHz.
c. Determine the guided wavelength at the same frequency.
Solution
c 3 X 10
8
a. fc = 2a = 2 x 7 X 102 = 2.14 GHz
c 3 X 10
8
b. V
g
= = = 3 78 X 10
8
m/s
VI  (fc!f)2 VI  (2.14/3.5}2 .
A Ao 3 x 10
8
/(3.5 X 10
9
)
C. g = VI _ (fclf)2 = VI _ (2.14/3.5}2 = 1O.8cm
Sec. 4.1 Rectangular Waveguides 111
4·1·3 TM Modes in Rectangular Waveguides
The TM
mn
modes in a rectangular guide are characterized by Hz = O. In other
words, the z component of an electric field E must exist in order to have energy
transmission in the guide. Consequently, the Helmholtz equation for E in the rectan
gular coordinates is given by
A solution of the Helmholtz equation is in the form of
E
z
= [Am sin (:x) + B
m
cos (m;x) J[c sin (n;Y) + Dncos (n;y) J e  j ~ ~
(4160)
which must be determined according to the given boundary conditions. The proce
dures for doing so are similar to those used in finding the TEmode wave.
The boundary conditions on E
z
require that the field vanishes at the waveguide
walls, since the tangent component of the electric field E
z
is zero on the conducting
surface. This requirement is that for E
z
= 0 at x = 0, a, then B
m
= 0, and for
E
z
= 0 at y = 0, b, then D
n
= O. Thus the solution as shown in Eq. (4160) re
duces to
(4161)
where m = 1, 2, 3, . . .
n = 1,2,3, ...
If either m = 0 or n = 0, the field intensities all vanish. So there is no TM
ol
or
TM
IO
mode in a rectangular waveguide, which means that TE
IO
is the dominant
mode in a rectangular waveguide for a > b. For Hz = 0, the field equations, after
expanding V x H = jweE, are given by
iJE
z
:a E . H
ay + Jpg y =  JWJ.L x
:a E iJE
z
• H
Jpg x +  = JWJ.L y
iJx
(4162)
(4163)
(4167)
(4164)
(4165)
(4166)
iJE
y
_ iJE
x
= 0
iJx iJy
f3g Hy = weEx
f3
g
H
x
= weE
y
iJH
y
_ iJH
x
= jweE
z
iJx iJy
These equations can be solved simultaneously for Ex , E
y
, H
x
, and H
y
in terms of E
z
•
112 Microwave Waveguides and Components Chap. 4
The resultant field equations for TM modes are
E =  jf3g aEz
x k ~ ax
E =  jf3g aEz
y k ~ ay
E
z
= Eq. (4161)
H = jWE aE
z
x k ~ ay
H =  jWE aE
z
y k ~ ax
(4168)
(4169)
(4170)
(4171 )
(4172)
(4173)
(4174)
Hz = 0
where Pi  W
2
J.l€ = fi is replaced.
Differentiating Eq. (4161) with respect to x or y and substituting the results
in Eqs. (4168) through (4173) yield a new set of field equations. The TM
mn
mode
field equations in rectangular waveguides are
(
m7Tx) . (n7T
Y) .
Ex = E
ox
cos a sm b eJ/3
g
Z
. (m7Tx) (n7T
Y
)." Z
E
v
= EOy sm a cos b ejf'g
E
z
= Eq. (4161)
H
x
= Hili sin (m;x) cos (n;Y)e
jf3gZ
H
y
= HOy cos (m;x) sin (n:Y)ejf3gZ
(4175)
(4176)
(4177)
(4178)
(4179)
(4180)
(4181)
Some of the TMmode characteristic equations are identical to those of the TE
modes, but some are different. For convenience, all are shown here:
1 r;;;;;;;.
/c = 2 ~ Y + /;z
f3g = W ~ ~
1
 0Y
A
A = ;====
g VI  Uj /)2
V
V = p
g VI  (/clfF
(4182)
(4183)
Sec. 4.1 Rectangular Waveguides
Z = {3g = 1 / ~ 1 _ (f)2
g WE f
113
(4184)
(4185)
4·1·4 Power Transmission in Rectangular
Waveguides
The power transmitted through a waveguide and the power loss in the guide walls
can be calculated by means of the complex Poynting theorem described in Chapter
2. It is assumed that the guide is terminated in such a way that there is no reflection
from the receiving end or that the guide is infinitely long compared with the wave
length. From the Poynting theorem in Section 22, the power transmitted through a
guide is given by
Ptr = fp' ds = f~ (E x H*)' ds
For a lossless dielectric, the timeaverage power flow through a rectangular guide is
given by
(4186)
(4187)
For TE
mn
modes, the average power transmitted through a rectangular waveguide is
given by
P
tr
= V
1
 (Ie/ f)2 r
b
r
a
(I Ex 1
2
+ 1By 1
2
) dx dy
21/ J
o
J
o
For TM
mn
modes, the average power transmitted through a rectangular waveguide is
given by
1 Ibla
P
tr
= V (I Ex 1
2
+ 1Ey 1
2
) dx dy
21/ 1  (fc/ f)2 0 0
where 1/ = ~ is the intrinsic impedance in an unbounded dielectric.
4·1·5 Power Losses in Rectangular Waveguides
There are two types of power losses in a rectangular waveguide:
1. Losses in the dielectric
2. Losses in the guide walls
(4188)
First we shall consider power losses caused by dielectric attenuation. In a 10w
114 Microwave Waveguides and Components Chap. 4
loss dielectric (that is, (T ~ JUf.), the propagation constant for a plane wave traveling
in an unbounded lossy dielectric is given in Eq. (2520) by
a = ~ j; = 71; (4189)
The attenuation caused by the lowloss dielectric in the rectangular waveguide for
the TE
mn
or TM
mn
modes is given by
(TT/
a = for TE mode
g 2V1  (fe/I)2
a
g
= ~ T / VI  (fc/I)2 for TM mode
(4190)
(4190a)
As I P Ie, the attenuation constant in the guide approaches that for the unbounded
dielectric given by Eq. (4189). However, if the operating frequency is way below
the cutoff frequency, I ~ Ie, the attenuation constant becomes very large and non
propagation occurs.
Now we shall consider power losses caused by the guide walls. When the elec
tric and magnetic intensities propagate through a lossy waveguide, their magnitudes
may be written
lEI = IEoz\eagz
1R 1= 1R
oz
)e
llg2
(4191)
l41C>'l)
where E
oz
and H
oz
are the field intensities at z = O. It is interesting to note that, for a
lowloss guide, the timeaverage power flow decreases proportionally to e  2a
g
z •
Hence
(4193)
For ~ o s s ~ P
lr
and lagz ~ 1,
(4194)
Finally,
(4195)
where P
L
is the power loss per unit length. Consequently, the attenuation constant of
the guide walls is equal to the ratio of the power loss per unit length to twice the
power transmitted through the guide.
Since the electric and magnetic field intensities established at the surface of a
lowloss guide wall decay exponentially with respect to the skin depth while the
waves progress into the walls, it is better to define a surface resistance of the guide
walls as
fi/square (4196)
Sec. 4.1 Rectangular Waveguides
115
where p = resistivity of the conducting wall in ohmsmeter
(T = conductivity in mhos per meter
5 = skin depth or depth of penetration in meters
The power loss per unit length of guide is obtained by integrating the power
density over the surface of the conductor corresponding to the unit length of the
guide. This is
W/unit length (4197)
(4198)
where HI is the tangential component of magnetic intensity at the guide walls.
Substitution of Eqs. (4186) and (4197) in Eq. (4195) yields
_ Rs Is I HI 1
2
ds
a
g
 2Z
g
fa I H 1
2
da
where
1 H 1
2
= 1 Hz 1
2
+ I Hy 1
2
IHI 12 = IHuY + 1 Htyl2
(4199)
(41100)
Example 412: TE
IO
Mode in Rectangular Waveguide
An airfilled waveguide with a cross section 2 x 1 cm transports energy in the TE
IO
mode at the rate of 0.5 hp. The impressed frequency is 30 GHz. What is the peak value
of the electric field occurring in the guide? (Refer to Fig. 415.)
Solution The field components of the dominant mode TE
IO
can be obtained by sub
stituting m = I and n = 0 in Eqs. (4147) through (4152). Then
Ex = 0
E
z
= 0
where Zg = w/Lo/f3g.
H
EOy. (7TX) "{3
x =  SIn  eJ gZ
Zg a
: ;tz
I /
:/
~     
/
/
//
/
/
/
/
/
x
Figure 415 Rectangular waveguide
for Example 412.
116
Microwave Waveguides and Components Chap. 4
The phase constant f3g can be found from
7T
2
1 x 9 x 10
20
1
{3g = W
2
JLo
E
o  = 7T 7  a2 = 7T 9 X 1016  4 X 104
= 193.57T = 608.81 rad/m
The power delivered in the z direction by the guide is
p = ff (E X H*)] dx dy Uz
= ff sin Uy) X sin ].dx dy U
z
1 f3
l
bla ( ( ))2
2 g . 7TX
= sm  dxdy
2 WJLo 0 0 a
1 2 f3g
=
4 WJLo
= 53.87 kV/m
The peak value of the electric intensity is 53.87 kVlm.
4·1·6 Excitations of Modes in Rectangular
Waveguides
In general, the field intensities of the desired mode in a waveguide can be established
by means of a probe or loopcoupling device. The probe may be called a monopole
antenna; the coupling loop, the loop antenna. A probe should be located so as to ex
cite the electric field intensity of the mode, and a coupling loop in such a way as to
generate the magnetic field intensity for the desired mode. If two or more probes or
loops are to be used, care must be taken to ensure the proper phase relationship be
tween the currents in the various antennas. This factor can be achieved by inserting
additional lengths of transmission line in one or more of the antenna feeders.
Impedance matching can be accomplished by varying the position and depth of the
antenna in the guide or by using impedancematching stubs on the coaxial line feed
ing the waveguide. A device that excites a given mode in the guide can also serve
reciprocally as a receiver or collector of energy for that mode. The methods of exci
tation for various modes in rectangular waveguides are shown in Fig. 416.
In order to excite a TE
w
mode in one direction of the guide, the two exciting
antennas should be arranged in such a way that the field intensities cancel each other
in one direction and reinforce in the other. Figure 417 shows an arrangement for
launching a TE
w
mode in one direction only. The two antennas are placed a quarter
wavelength apart and their phases are in time quadrature. Phasing is compensated by
use of an additional quarterwavelength section of line connected to the antenna
Sec. 4.1 Rectangular Waveguides 117
Antenna
probe
TE
IO
mode
TM
11
mode
TE
20
mode
Shortcircuited _..L
end
Antenna probe
TM
21
mode
Figure 4·1·6 Methods of exciting various modes in rectangular waveguides.
Dutof I
phase 2
2
__ I
In phase
__ 2
Waveguide
Figure 4·1·7 A method of launching a
TE
IO
mode in one direction only.
feeders. The field intensities radiated by the two antennas are in phase opposition to
the left of the antennas and cancel each other, whereas in the region to the right of
the antennas the field intensities are in time phase and reinforce each other. The re
sulting wave thus propagates to the right in the guide.
Some higher modes are generated by discontinuities of the waveguide such as
obstacles, bends, and loads. However, the higherorder modes are, in general, more
highly attenuated than the corresponding dominant mode. On the other hand, the
dominant mode tends to remain as a dominant wave even when the guide is large
enough to support the higher modes.
4·1· 7 Characteristics of Standard Rectangular
Waveguides
Rectangular waveguides are commonly used for power transmission at microwave
frequencies. Their physical dimensions are regulated by the frequency of the signal
being transmitted. For example, at Xband frequencies from 8 to 12 GHz, the out
side dimensions of a rectangular waveguide, designated as EIA WR (90) by the
Electronic Industry Association, are 2.54 cm (1.0 in.) wide and 1.27 cm (0.5 in.)
118 Microwave Waveguides and Components Chap. 4
TABLE 4·1·7 CHARACTERISTICS OF STANDARD RECTANGULAR WAVEGUIDES
Physical dimensions
Cutoff Recommended
frequency for frequency
EIA"
Inside, in cm (in.) Outside, in cm (in.)
airfilled range for
designation waveguide TE
IO
mode
WR
b
( ) Width Height Width Height in GHz inGHZ
2300 58.420 29.210 59.055 29.845 0.257 0.320.49
(23.000) (11.500) (23.250) (11.750)
2100 53.340 26.670 53.973 27.305 0.281 0.350.53
(21.000) (10.500) (21.250) (10.750)
1800 45.720 22.860 46.350 23.495 0.328 0.410.62
(18.000) (9.000) (18.250) (9.250)
1500 38.100 19.050 38.735 19.685 0.394 0.490.75
(15.000) (7.500) (15.250) (7.750)
1150 29.210 14.605 29.845 15.240 0.514 0.640.98
(11.500) (5.750) (11.750) (6.000)
975 24.765 12.383 25.400 13.018 0.606 0.761.15
(9.750) (4.875) (10.000) (5.125)
770 19.550 9.779 20.244 10.414 0.767 0.961.46
(7.700) (3.850) (7.970) (4.100)
650 16.510 8.255 16.916 8.661 0.909 1.141.73
(6.500) (3.250) (6.660) (3.410)
510 12.954 6.477 13.360 6.883 1.158 1.452.20
(5.100) (2.500) (5.260) (2.710)
430 10.922 5.461 11.328 5.867 1.373 1.722.61
(4.300) (2.150) (4.460) (2.310)
340 8.636 4.318 9.042 4.724 1.737 2.173.30
(3.400) (1.700) (3.560) (1.860)
284 7.214 3.404 7.620 3.810 2.079 2.603.95
(2.840) (1.340) (3.000) (1.500)
229 5.817 2.908 6.142 3.233 2.579 3.224.90
(2.290) (1.145) (2.418) (1.273)
187 4.755 2.215 5.080 2.540 3.155 3.945.99
(1.872) (0.872) (2.000) (1.000)
159 4.039 2.019 4.364 2.344 3.714 4.647.05
(1.590) (0.795) (1.718) (0.923)
137 3.485 1.580 3.810 1.905 4.304 5.388.17
(1.372) (0.622) (1.500) (0.750)
112 2.850 1.262 3.175 1.588 5.263 6.579.99
(1.122) (0.497) (1.250) (0.625)
90 2.286 1.016 2.540 1.270 6.562 8.2012.50
(0.900) (0.400) (1.000) (0.500)
75 1.905 0.953 2.159 1.207 7.874 9.8415.00
(0.750) (0.375) (0.850) (0.475)
62 1.580 0.790 1.783 0.993 9.494 11.9018.00
(0.622) (0.31 I) (0.702) (0.391)
51 1.295 0.648 1.499 0.851 11.583 14.5022.00
(0.510) (0.255) (0.590) (0.335)
42 1.067 0.432 1.270 0.635 14.058 17.6026.70
(0.420) (0.170) (0.500) (0.250)
a Electronic Industry Association
b Rectangular Waveguide
Sec. 4.2 Circular Waveguides 119
TABLE 4·1·7 CHARACTERISTICS OF STANDARD RECTANGULAR WAVEGUIDES (Cont.)
Physical dimensions
Cutoff Recommended
frequency for frequency
EIA"
Inside, in cm (in.) Outside, in cm (in.)
airtilled range for
designation waveguide TE
IO
mode
WR
b
( ) Width Height Width Height inGHz inGHZ
34 0.864 0.432 1.067 0.635 17.361 21.7033.00
(0.340) (0.170) (0.420) (0.250)
28 0.711 0.356 0.914 0.559 21.097 26.4040.00
(0.280) (0.140) (0.360) (0.220)
22 0.569 0.284 0.772 0.488 26.362 32.9050.10
(0.224) (0.112) (0.304) (0.192)
19 0.478 0.239 0.681 0.442 31.381 39.2059.60
(0.188) (0.094) (0.268) (0.174)
15 0.376 0.188 0.579 0.391 39.894 49.8075.80
(0.148) (0.074) (0.228) (0.154)
12 0.310 0.155 0.513 0.358 48.387 60.5091.90
(0.122) (0.061) (0.202) (0.141)
10 0.254 0.127 0.457 0.330 59.055 73.80112.00
(0.100) (0.050) (0.180) (0.130)
8 0.203 0.102 0.406 0.305 73.892 92.20140.00
(0.080) (0.040) (0.160) (0.120)
7 0.165 0.084 0.343 0.262 90.909 114.00173.00
(0.065) (0.033) (0.135) (0.103)
5 0.130 0.066 0.257 0.193 115.385 145.00220.00
(0.051) (0.026) (0.101) (0.076)
4 0.109 0.056 0.211 0.157 137.615 172.00261.00
(0.043) (0.022) (0.083) (0.062)
3 0.086 0.043 0.163 0.119 174.419 217.00333.00
(0.034) (0.017) (0.064) (0.047)
high, and its inside dimensions are 2.286 cm (0.90 in.) wide and 1.016 cm (0.40
in.) high. Table 417 tabulates the characteristics of the standard rectangular
waveguides.
4·2 CIRCULAR WAVEGUIDES
A circular waveguide is a tubular, circular conductor. A plane wave propagating
through a circular waveguide results in a transverse electric (TE) or transerse mag
netic (TM) mode. Several other types of waveguides, such as elliptical and reentrant
guides, also propagate electromagnetic waves.
4.2.1 Solutions of Wave Equations in Cylindrical
Coordinates
As described in Section 41 for rectangular waveguides, only a sinusoidal steady
state or frequencydomain solution will be attempted for circular waveguides. A
cylindrical coordinate system is shown in Fig. 421.
120
z
Microwave Waveguides and Components Chap. 4
x
Figure 421 Cylindrical coordinates.
(421)
The scalar Helmholtz equation in cylindrical coordinates is given by
I a (a",) I a
2
", a
2
", 2
;. ar r ar + r
2
a</>2 + az
2
= y '"
Using the method of separation of variables, the solution is assumed in the form of
'I' = R(r)ep(</»Z(z)
where R(r) = a function of the r coordinate only
ep(</» = a function of the </> coordinate only
Z(z) = a function of the z coordinate only
(422)
(424)
Substitution of Eq. (422) in (421) and division of the resultant by (422) yield
1 d ( dR) 1 d
2
ep 1 d
2
Z 2 (423)
rR dr \r dr + r
2
ep d</>2 + Zdz
2
= Y
Since the sum of the three independent terms is a constant, each of the three terms
must be a constant. The third term may be set equal to a constant y ~ :
d
2
Z
 2Z
dz 2  Yg
The solutions of this equation are given by
(425)
where Yg = propagation constant of the wave in the guide.
Inserting Y; for the third term in the lefthand side of Eq. (423) and multi
plying the resultant by r
2
yield
!: ~ (r dR) + l d
2
ep _ (y
2
_ y2) r
2
= 0 (426)
R dr dr ep d</>2 g
The second term is a function of </> only; hence equating the second term to a con
Sec. 4.2 Circular Waveguides 121
(427)
stant (n2) yields
d
2
<1>
 n
2
<1>
dcf>2  
The solution of this equation is also a harmonic function:
<I> = An sin (ncf» + B
n
cos (ncf» (428)
Replacing the <I> term by (n
2
) in Eq. (426) and multiplying through by R, we
have
This is Bessel's equation of order n in which
k ~ + y2 = yi
(429)
(4210)
This equation is called the characteristic equation of Bessel's equation. For a lossless
guide, the characteristic equation reduces to
,...
f3g = ±VW
2
fJ€  k ~ (4211)
The solutions of Bessel's equation are
(4212)
where Jiker) is the nthorder Bessel function of the first kind, representing a stand
ing wave of cos (ker) for r < a as shown in Fig. 422. Nn(kcr) is the nthorder Bes
sel function of the second kind, representing a standing wave of sin (ker) for r > a
as shown in Fig. 423.
Therefore the total solution of the Helmholtz equation in cylindrical coordi
nates is given by
'I' = [CnJn(kcr) + DnNn(ker)][A
n
sin (ncf» + B
n
cos (ncf»]e'''jf3
g
z (4213)
[SI
Jo
. ~ . . 
1I
  j j 
r...\l
1. 1
._
 ..  ..
l
l X ~ ? ( 
!.2
J I ./
V
f\
~
~
I...
f\
J...

..... L
i/..,V........
r'(
I 1\ 1/Iv
~
/'
"
t>< / K.
C><
 ~
\ ~
)<
V
b(
"
/ ~
,
V
~

X
K
lXV
....... .."

\. ~
e 
o
0.2
1.0
0.8
0.6
..
:{ 0.4
. ~
o
OJ
:0
<;;
> 0.2
0.4
0.6
o 2 4 6 8 10 12 14 16
Argument ofJn(ker)
Figure 422 Bessel functions of the first kind.
122 Microwave Waveguides and Components Chap. 4
I
1'\
N I ' N I
tNo /
.....; 2 N
3
II I
f\ lX")<r
'"
I.
"' ......
f..... I.

1/ /
"
1)\ /V'\
V
P',
./K
p
I J
If
K
,
"/
f\.. P\ / .>
"
V
I / /
/
I
i"""'
I
1/
V1/
J /
J / 1/
I II J
0.6
0.4
0.2
o
'0 0.4
OJ
0.6
>
0.8
 1.0
1.2
o 2 4 6 8 10 12 14 16
Figure 423 Bessel functions of the second kind.
At r = 0, however, kcr = 0; then the function N
n
approaches infinity, so Dn = O.
This means that at r = 0 on the z axis, the field must be finite. Also, by use of
trigonometric manipulations, the two sinusoidal terms become
An sin (n¢) + Bn cos (n¢) = + cos [n¢ +
= Fncos(n¢) (4214)
Finally, the solution of the Helmholtz equation is reduced to
'I' = 'l'oJn(kcr) cos (n¢)e
jJ3gZ
(4215)
4.2.2 TE Modes in Circular Waveguides
It is commonly assumed that the waves in a circular waveguide are propagating in
the positive z direction. Figure 424 shows the coordinates of a circular guide.
The TE
np
modes in the circular guide are characterized by £z = O. This means
z
x
y
Figure 424 Coordinates of a circular
waveguide.
Sec. 4.2 Circular Waveguides 123
that the z component of the magnetic field Hz must exist in the guide in order to have
electromagnetic energy transmission. A Helmholtz equation for Hz in a circular
guide is given by
(4216)
Its solution is given in Eq. (4215) by
Hz = HozJn(kcr) cos (n</>)e
Jf3gZ
(4217)
which is subject to the given boundary conditions.
For a lossless dielectric, Maxwell's curl equations in frequency domain are
given by
v X E =  jWJLH
V X H = jweE
(4218)
(4219)
In cylindrical coordinates, their components are expressed as
1 aE
z
aEq, .
    =  ]wJLH
r
r a</> az
aE
r
aE
z
.
   =  ]wJLHq,
az ar
(4220)
(4221)
(4222)
(4223)
(4225)
(4224)
I a I aE
r
•
  (rEq,)    =  ]wJLH
z
r ar r a</>
.!. aH
z
_ aHq, = ]'weE
r a</> az r
. aHz •
 jf3gH
r
 a; =]weEq,
1 a 1 aH
r
•
  (rHq,)    = ]weE
z
r ar r a</>
When the differentiation a/ az is replaced by (  jf3g) and the z component of elec
tric field E
z
by zero, the TEmode equations in terms of Hz in a circular waveguide
are expressed as
E = _jWJL .!. aH
z
r k ~ r a</>
jWJL aH
z
Eq, = k ~ ar
E
z
= 0
H =  jf3g aHz
r k ~ ar
(4226)
(4227)
(4228)
(4229)
124 Microwave Waveguides and Components
H   j{3g .!. aHz
eI>  r acP
Hz = HozJn(kcr) cos (ncP)e
jJ3gZ
Chap. 4
(4230)
(4231)
where = w
2
JL€  {3; has been replaced.
The boundary conditions require that the cP component of the electric field Eel>,
which is tangential to the inner surface of the circular waveguide at r = a, must van
ish or that the r component of the magnetic field H
r
, which is normal to the inner
surface of r = a, must vanish. Consequently
Eel> = 0 at r = a ... = 0
or
Hr = Oatr = a ... = 0
This requirement is equivalent to that expressed in Eq. (4217):
aH
z
I = cos (ncP)e
jJ3gZ
= 0
ar
r=a
Hence
(4232)
(4233)
where J indicates the derivative of I n •
Since the I
n
are oscillatory functions, the (kea) are also oscillatory func
tions. An infinite sequence of values of (kea) satisfies Eq. (4232). These points,
the roots of Eq. (4232), correspond to the maxima and minima of the curves
as shown in Fig. 422. Table 421 tabulates a few roots of for
some lowerorder n.
TABLE 4·2·1 pth ZEROS OF FOR TE
np
MODES
p n = 0 2 3 4 5
1 3.832 1.841 3.054 4.201 5.317 6.416
2 7.016 5.331 6.706 8.015 9.282 10.520
3 10.173 8.536 9.969 11.346 12.682 13.987
4 13.324 11.706 13.170
The permissible values of k
e
can be written
k
e
=
a
(4234)
Substitution of Eq. (4217) in Eqs. (42 26) through (4 231) yields the complete
field equations of the TE
np
modes in circular waveguides:
E
r
= EorJn(x;r) sin (ncP)e
jJ3gZ
(4235)
Sec. 4.2 Circular Waveguides
Eq, = cos (ncf»e
j
{3gZ
E
z
= °
125
(4236)
(4237)
(4239)
(4238) H
r
=  In(X;r) cos (ncf»e
j
{3gZ
E
or
. ( ) '(3 Z
Hq, =  I
n
 sm ncf> e
J
g
Zg a
Hz = HOzln(X;r) cos (ncf»e
j
{3gZ (4240)
where Zg = E
r
/ Hq, =  Eq,/ H
r
has been replaced for the wave impedance in the
guide and where n = 0,1,2,3, ... andp = 1,2,3,4, ....
The first subscript n represents the number of full cycles of field variation in
one revolution through 21T rad of cf>. The second subscript p indicates the number of
zeros of Eq,that is, along the radial of a guide, but the zero on the axis
is excluded if it exists.
The mode propagation constant is determined by Eqs. (4226) through
(4231) and Eq. (4234):
(4241)
The cutoff wave number of a mode is that for which the mode propagation constant
vanishes. Hence
The cutoff frequency for TE modes in a circular guide is then given by
j; =
c
and the phase velocity for TE modes is
(4242)
(4243)
W v
V
g
= 13g = VI  fF (4244)
where V
p
= = is the phase velocity in an unbounded dielectric.
The wavelength and wave impedance for TE modes in a circular guide are
given, respectively, by
and
A
A
g
= Vr=I==(=fc=/ f=F
z = W/L = TJ
g 13g VI  (j;/ fF
(4245)
(4246)
126 Microwave Waveguides and Components Chap. 4
where A = 7= wavelength in an unbounded dielectric
TJ = ~ = intrinsic impedance in an unbounded dielectric
Example 421: TE Mode in Circular Waveguide
A TEll mode is propagating through a circular waveguide. The radius of the guide is
5 cm, and the guide contains an air dielectric (refer to Fig. 425).
z
x
y
Figure 425 Diagram for Example
421.
a. Determine the cutoff frequency.
b. Determine the wavelength A
g
in the guide for an operating frequency of 3 GHz.
c. Determine the wave impedance Zg in the guide.
Solution
a. From Table 421 for TEll mode, n = 1, p = 1, and X;I = 1.841 = kea. The
cutoff wave number is
k = 1.841 = 1.841 = 36 82
e a 5 X 10
2
•
The cutoff frequency is
Ie = ~ (36.82)(3 X 10
8
) 1.758 X 109 Hz
27T JLoEo 27T
b. The phase constant in the guide is
f3g = YW
2
JLoEo  k ~
= Y(27T X 3 X 10
9
)2(47T X 10
7
X 8.85 X 10
12
)  (36.82}2
= 50.9 rads/m
The wavelength in the guide is
= 27T = 6.28 = 12 3
A
g
f3g 50.9 . cm
Sec. 4.2 Circular Waveguides
c. The wave impedance in the guide is
ZR = WJLo = (21T X 3 X 109)(41T X 1 0 ~ 7 ) = 465 n
f3R 50.9
127
4·2·3 TM Modes in Circular Waveguides
The TM
np
modes in a circular guide are characterized by Hz = O. However, the z
component of the electric field E
z
must exist in order to have energy transmission in
the guide. Consequently, the Helmholtz equation for E
z
in a circular waveguide is
given by
V
2
E
z
= y
2
E
z
Its solution is given in Eq. (4215) by
E
z
= EozJikcr) cos (n<f»e
jf3gZ
(4247)
(4248)
which is subject to the given boundary conditions.
The boundary condition requires that the tangential component of electric field
E
z
at r = a vanishes. Consequently,
(4249)
Since In(kcr) are oscillatory functions, as shown in Fig. 422, there are infinite
numbers of roots of In(kcr). Table 422 tabulates a few of them for some lower
order n.
TABLE 4·2·2 pth ZEROS OF In(Kca) FOR TMnp MODES
p n= 0 2 3 4 5
1 2.405 3.832 5.136 6.380 7.588 8.771
2 5.520 7.106 8.417 9.761 11.065 12.339
3 8.645 10.173 11.620 13.015 14.372
4 11.792 13.324 14.796
For Hz = 0 and d/dz =  jf3g, the field equations in the circular guide, after
expanding V x E =  jWJ.LH and V x H = jWE E, are given by
E =  jf3g dEz
r k ~ dr
 jf3g I dEz
Eq, = 77 d<f>
E
z
= Eq. (4248)
H = jWE! dEz
r k ~ r d<f>
(4250)
(4251)
(4252)
(4253)
128 Microwave Waveguides and Components Chap. 4
H  jWE aEz
et>  k;: ar
Hz = 0
(4254)
(4255)
where k;: = w
2
JLE  13; has been replaced.
Differentiation of Eq. (4248) with respect to z and substitution of the result
in Eqs. (4250) through (4255) yield the field equations of TMnp modes in a circu
lar waveguide:
Hz = 0
(4256)
(4257)
(4258)
(4259)
(4260)
(4261)
where Zg = Er/Het> =  Eet>/Hr = f3g/(WE) and k
c
= Xnp/a have been replaced and
where n = 0, 1, 2, 3, ... and p = 1, 2, 3, 4, ....
Some of the TMmode characteristic equations in the circular guide are identi
cal to those of the TE mode, but some are different. For convenience, all are shown
here:
j; = X
np
c 21raV;;;
W V
p
V
g
= f3g = VI  (tc/ f)2
A
A
g
= yr=l==(=fc=/ f=)2
Z = B
g
= T J ~ 1 _ (.f)2
g WE f
(4262)
(4263)
(4264)
(4265)
(4266)
(4267)
It should be noted that the dominant mode, or the mode of lowest cutoff frequency
Sec. 4.2 Circular Waveguides 129
in a circular waveguide, is the mode of TEll that has the smallest value of the
product, kca = 1. 841, as shown in Tables 421 and 422.
Example 422: Wave Propagation in Circular Waveguide
An airfilled circular waveguide has a radius of 2 cm and is to carry energy at a fre
quency of 10 GHz. Find all the TEnp and TMnp modes for which energy transmission is
possible.
Solution Since the physical dimension of the guide and the frequency of the wave re
main constant, the product of (kca) is also constant. Thus
Any mode having a product of (kca) less than or equal to 4.18 will propagate the wave
with a frequency of 10 GHz. This is
The possible modes are
TE
11
(1.841)
TE
21
(3.054)
TE
01
(3.832)
TM
01
(2.405)
TM
ll
(3.832)
4·2·4 TEM Modes in Circular Waveguides
The transverse electric and transverse magnetic (TEM) modes or transmissionline
modes are characterized by
E
z
= Hz = 0
This means that the electric and magnetic fields are completely transverse to the di
rection of wave propagation. This mode cannot exist in hollow waveguides, since it
requires two conductors, such as the coaxial transmission line and twoopenwire
line. Analysis of the TEM mode illustrates an excellent analogous relationship be
tween the method of circuit theory and that of the field theory. Figure 4 ~ 2  6 shows
a coaxial line.
Maxwell's curl equations in cylindrical coordinates
become
v X E =  jW/LH
V X H = jWEE
BgEr = w/LHt/>
BgEt/> = w/LHr
(4268)
(4269)
(4270)
(4271)
130
z
Microwave Waveguides and Components
Chap. 4
y
Figure 426 Coordinates of a coaxial
line.
a aEr
ar (rEel»  ae/> = 0
{3gH
r
= wEEeI>
{3gHeI> = wEEr
a( ) aH
r
 rHeI>   = 0
ar ae/>
(4272)
(4273)
(4274)
(4275)
where ajar =  j{3g and E
z
= Hz = 0 are replaced.
Substitution of Eq. (4271) in (4273) yields the propagation constant of the
TEM mode in a coaxial line:
{3g = w ~
(4276)
which is the phase constant of the wave in a lossless transmission line with a dielec
tric.
In comparing the preceding equation with the characteristic equation of the
Helmholtz equation in cylindrical coordinates as given in Eq. (4211) by
{3g = Vw
2
fJE  k ~ (4277)
it is evident that
(4278)
This means that the cutoff frequency of the TEM mode in a coaxial line is zero,
which is the same as in ordinary transmission lines.
The phase velocity of the TEM mode can be expressed from Eg. (4276) as
W 1
V
p
= {3g = ~
which is the velocity of light in an unbounded dielectric.
(4279)
Sec. 4.2 Circular Waveguides 131
The wave impedance of the TEM mode is found from either Eqs. (4270) and
(4273) or Eqs. (4271) and (4274) as
TJ (TEM) = ~ (4280)
which is the wave impedance of a lossless transmission line in a dielectric.
Ampere's law states that the line integral of H about any closed path is exactly
equal to the current enclosed by that path. This is
fH . de = I = I
o
e
j
{3gZ = 27TrHq, (4281)
where I is the complex current that must be supported by the center conductor of a
coaxial line. This clearly demonstrates that the TEM mode can only exist in the two
conductor systemnot in the hollow waveguide because the center conductor does
not exist.
In summary, the properties of TEM modes in a lossless medium are as fol
lows:
1. Its cutoff frequency is zero.
2. Its transmission line is a twoconductor system.
3. Its wave impedance is the impedance in an unbounded dielectric.
4. Its propagation constant is the constant in an unbounded dielectric.
5. Its phase velocity is the velocity of light in an unbounded dielectric.
4·2·5 Power Transmission in Circular Waveguides or
Coaxial Lines
In general, the power transmitted through circular waveguides and coaxial lines can
be calculated by means of the complex Poynting theorem described in Section 22.
For a lossless dielectric, the timeaverage power transmitted through a circular guide
can be given by
(4282)
(4283)
h Z
Er Eq, . d . h 'd
were g = Hq, =  H
r
= wave tmpe ance m t e gUt e
a = radius of the circular guide
Substitution of Zg for a particular mode in Eq. (4282) yields the power transmitted
by that mode through the guide.
132 Microwave Waveguides and Components Chap. 4
(4285)
(4286)
For TE
np
modes, the average power transmitted through a circular guide is
given by
P'r = VI f1Tf[l
Er
l
2
+ IEeI>l2]r dr dcf> (4284)
where TJ = v;;;;. is the intrinsic impedance in an unbounded dielectric.
For TM
np
modes, the average power transmitted through a circular guide is
given by
P 1 2 f21Tfa[1 E
r
1
2
+ I Eel> 1
2
]r dr dcf>
tr = 2TJ VI  (fc/ f) 0 0
For TEM modes in coaxial lines, the average power transmitted through a
coaxial line or twoopenwire line is given by
1 i
21T
i
a
PI' = "2 [I Er1
2
+ 1Eel> 1
2
]r dr dcf>
TJ 0 0
If the current carried by the center conductor of a coaxial line is assumed to be
(4287)
the magnetic intensity induced by the current around the center conductor is given
by Ampere's law as
1
0
f3 Z
HeI> = e J g
21Tr
(4288)
(4289)
The potential rise from the outer conductor to the center conductor is given by
L
a La kTJ (b) .
V
r
=  Erdr =  TJHeI>dr =  In  e
Jf3
g
Z
b b 21T a
The characteristic impedance of a coaxial line is
Zo = = .!L In (4290)
1 21T a
where TJ = v;;;;. is the intrinsic impedance in an unbounded dielectric.
The power transmitted by TEM modes in a coaxial line can be expressed from
Eg. (4286) as
1 f21Tfb 16 (b)
P
tr
= 2TJ 0 a I TJHeI> 1
2
r dr dcf> = In ;;
Substitution of Iv,: I from Eg. (4289) into Eg. (4291) yields
Ptr=tVo/o
(4291)
(4292)
This shows that the power transmission derived from the Poynting theory is the
same as from the circuit theory for an ordinary transmission line.
Sec. 4.2 Circular Waveguides 133
4·2·6 Power Losses in Circular Waveguides
or Coaxial Lines
The theory and equations derived in Section 415 for TE and TM modes in rectan
gular waveguides are applicable to TE and TM modes in circular guides. The power
losses for the TEM mode in coaxial lines can be computed from transmissionline
theory by means of
P
L
= 2aP
tr
where P
L
= power loss per unit length
Ptr = transmitted power
ex = attenuation constant
For a lowloss conductor, the attenuation constant is given by
4·2· 7 Excitations of Modes in Circular Waveguides
(4293)
(4294)
As described earlier, TE modes have no z component of an electric field, and TM
modes have no z component of magnetic intensity. If a device is inserted in a circu
lar guide in such a way that it excites only a z component of electric intensity, the
wave propagating through the guide will be the TM mode; on the other hand, if a
device is placed in a circular guide in such a manner that only the z component of
magnetic intensity exists, the traveling wave will be the TE mode. The methods of
excitation for various modes in circular waveguides are shown in Fig. 427.
Coaxial line
Antenna
l .... probe
TM
OI
mode TEll mode
Figure 4·2·7 Methods of exciting vari
ous modes in circular waveguides.
A common way to excite TM modes in a circular guide is by a coaxial line as
shown in Fig. 428. At the end of the coaxial line a large magnetic intensity exists
in the 4> direction of wave propagation. The magnetic field from the coaxial line will
excite the TM modes in the guide. However, when the guide is connected to the
source by a coaxial line, a discontinuity problem at the junction will increase the
standingwave ratio on the line and eventually decrease the power transmission. It is
often necessary to place a turning device around the junction in order to suppress the
reflection.
134 Microwave Waveguides and Components Chap. 4
Coaxial line
(a)
Single stub
_Coaxial4
Iine
~ I I [)) ))( II W",guld,
(b)
Figure 428 Methods of exciting TM modes in a circular waveguide. (a) Coaxial
line with a slotted waveguide. (b) Coaxial line in series with a circular waveguide.
TABLE 4·2·8 CHARACTERISTICS OF STANDARD CIRCULAR WAVEGUIDES
EIA" Cutoff frequency Recommended
designation Inside diameter for airfilled frequency range
WC
b
( ) in cm (in.) waveguide in GHz for TEll mode in GHz
992 25.184 (9.915) 0.698 0.801.10
847 21.514 (8.470) 0.817 0.941.29
724 18.377 (7.235) 0.957 1.101.51
618 15.700 (6.181) 1.120 1.291.76
528 13.411 (5.280) 1.311 1.512.07
451 11.458 (4.511) 1.534 1.762.42
385 9.787 (3.853) 1.796 2.072.83
329 8.362 (3.292) 2.102 2.423.31
281 7.142 (2.812) 2.461 2.833.88
240 6.104 (2.403) 2.880 3.314.54
205 5.199 (2.047) 3.381 3.895.33
175 4.445 (1.750) 3.955 4.546.23
150 3.810 (1.500) 4.614 5.307.27
128 3.254 (1.281) 5.402 6.218.51
109 2.779 (1.094) 6.326 7.279.97
94 2.383 (0.938) 7.377 8.4911.60
80 2.024 (0.797) 8.685 9.9713.70
69 1.748 (0.688) 10.057 11.6015.90
59 1.509 (0.594) 11.649 13.4018.40
50 1.270 (0.500) 13.842 15.9021.80
44 1.Il3 (0.438) 15.794 18.2024.90
38 0.953 (0.375) 18.446 21.2029.10
33 0.833 (0.328) 21.103 24.3033.20
28 0.714 (0.281) 24.620 28.3038.80
25 0.635 (0.250) 27.683 31.8043.60
22 0.556 (0.219) 31.617 36.4049.80
19 0.478 (0.188) 36.776 42.4058.10
17 0.437 (0.172) 40.227 46.3063.50
14 0.358 (0.141) 49.103 56.6077.50
13 0.318 (0.125) 55.280 63.5087.20
11 0.277 (0.109) 63.462 72.7099.70
9 0.239 (0.094) 73.552 84.80116.00
a Electronic Industry Association
b Circular Waveguide
Sec. 4.3 Microwave Cavities 135
4.2·8 Characteristics of Standard Circular
Waveguides
The inner diameter of a circular waveguide is regulated by the frequency of the sig
nal being transmitted. For example: at Xband frequencies from 8 to 12 GHz, the in
ner diameter of a circular waveguide designated as EIA WC(94) by the Electronic
Industry Association is 2.383 cm (0.938 in.). Table 428 tabulates the characteris
tics of the standard circular waveguides.
4·3 MICROWAVE CAVITIES
In general, a cavity resonator is a metallic enclosure that confines the electromag
netic energy. The stored electric and magnetic energies inside the cavity determine
its equivalent inductance and capacitance. The energy dissipated by the finite con
ductivity of the cavity walls determines its equivalent resistance. In practice, the
rectangularcavity resonator, circularcavity resonator, and reentrantcavity res
onator are commonly used in many microwave applications.
Theoretically a given resonator has an infinite number of resonant modes, and
each mode corresponds to a definite resonant frequency. When the frequency of an
impressed signal is equal to a resonant frequency, a maximum amplitude of the
standing wave occurs, and the peak energies stored in the electric and magnetic
fields are equal. The mode having the lowest resonant frequency is known as the
dominant mode.
4·3·1 Rectangular.Cavity Resonator
The electromagnetic field inside the cavity should satisfy Maxwell's equations, sub
ject to the boundary conditions that the electric field tangential to and the magnetic
field normal to the metal walls must vanish. The geometry of a rectangular cavity is
illustrated in Fig. 431.
The wave equations in the rectangular resonator should satisfy the boundary
condition of the zero tangential E at four of the walls. It is merely necessary to
choose the harmonic functions in z to satisfy this condition at the remaining two end
Figure 431 Coordinates of a rectan
gular cavity.
136 Microwave Waveguides and Components Chap. 4
walls. These functions can be found if
(
m7Tx) (mr y) . (P7TZ)
Hz = Hoz cos a cos b sm d
(TE
mnp
) (431)
where m = 0, I, 2, 3, ... represents the number of the halfwave periodicity in
the x direction
n = 0, I, 2, 3, ... represents the number of the halfwave periodicity in
the y direction
p = I, 2, 3, 4, ... represents the number of the halfwave periodicity in
the Z direction
and
E E
. (m7Tx) . (n7Tx) (P7TZ)
z = Oz sm a sm b cos d
(TM
mnp
) (432)
where m = I, 2, 3, 4, ..
n = I, 2, 3, 4, ..
P = 0, 1,2,3, ..
The separation equation for both TE and TM modes is given by
(433)
(434)
For a lossless dielectric, e = W
2
/LE; therefore, the resonant frequency is expressed
by
For a > b < d, the dominant mode is the TE
wl
mode.
In general, a straightwire probe inserted at the position of maximum electric
intensity is used to excite a desired mode, and the loop coupling placed at the posi
tion of maximum magnetic intensity is utilized to launch a specific mode. Figure
432 shows the methods of excitation for the rectangular resonator. The maximum
amplitude of the standing wave occurs when the frequency of the impressed signal is
equal to the resonant frequency.
Input
H
E
Figure 432 Methods of exciting wave
modes in a resonator.
432 CircularCavity Resonator
and SemicircularCavityResonator
Circularcavity resonator. A circularcavity resonator is a circular wave
guide with two ends closed by a metal wall (see Fig. 433). The wave function in
the circular resonator should satisfy Maxwell's equations, subject to the same
Sec. 4.3 Microwave Cavities
z
137
x
y
Figure 433 Coordinates of a circular
resonator.
(435)
boundary conditions described for a rectangularcavity resonator. It is merely neces
sary to choose the harmonic functions in Z to satisfy the boundary conditions at the
remaining two end walls. These can be achieved if
(). (q1TZ)
Hz = Hozin ; cos n<f> sm d
where n = 0, 1, 2, 3, is the number of the periodicity in the <f> direction
p = 1, 2, 3, 4, is the number of zeros of the field in the radial direction
q = 1, 2, 3, 4, . . . is the number of halfwaves in the axial direction
in = Bessell's function of the first kind
H
oz
= amplitude of the magnetic field
and
(
Xnpr) () (Q1TZ)
Ez = Eozln ;; cos n<f> cos d
(TM
npq
) (436)
wheren = 0,1,2,3, .
P = 1, 2, 3,4, .
Q = 0, 1, 2, 3, .
E
oz
= amplitude of the electric field
The separation equations for TE and TM modes are given by
p = (X;pY + (Q;Y
p = (X;pY + (Q;Y
(TE mode)
(TM mode)
(437)
(438)
Substitution of P = w
2
J.LE in Eqs. (437) and (438) yields the resonant frequen
cies for TE and TM modes, respectively, as
fr = 1 + (Q1T)2
a d
(TE) (439)
138
Microwave Waveguides and Components Chap. 4
(4310) (TM)
1 I(Xnp)2 (q1T)2
fr = \j ;; + d
It is interesting to note that the TM
llO
mode is dominant where 2a > d, and that the
TE
lll
mode is dominant when d 2a.
Semicircularcavity resonator. A semicircularcavity resonator is shown
in Fig. 434. The wave function of the TE
npq
mode in the semicircular resonator can
be written
(). (q1TZ)
Hz = HozJn cos ncP sm d
(TE mode) (4311)
where n = 0, 1, 2, 3, .
p = 1, 2, 3,4, .
q = 1, 2, 3, 4, .
a = radius of the semicircularcavity resonator
d = length of the resonator
1
Lr
I ............ ....,
I I
0
1
:z
/.t._>.J
; t/>
y
x
Figure 434 Semicircular resonator.
The wave function of the TM
npq
mode in the semicircularcavity resonator can be
written
(TM mode) (4312)
where n = 1, 2, 3, 4, ..
p = 1, 2, 3, 4, ..
q = 0, 1, 2, 3, ..
With the separation equations given in Eqs. (437) and (438), the equations of
resonant frequency for TE and TM modes in a semicircularcavity resonator are the
same as in the circularcavity resonator. They are repeated as follows:
fr = 1 + (q1Ta)2 (TEnpq mode) (4313)
d
Sec. 4.3 Microwave Cavities 139
(4314)
f,. = 1 I(X
np
)2 + (W
Tra
)2 (TMnpq mode)
2 7 T a ~ \ j d
However, the values of the subscripts n, p, and q differ from those for the circular
cavity resonator. Also, it must be emphasized that the TE
lil
mode is dominant if
d > a and that the TM
llo
mode is dominant if d < a.
4·3·3 Q Factor of a Cavity Resonator
(4315)
The quality factor Q is a measure of the frequency selectivity of a resonant or an
tiresonant circuit, and it is defined as
Q == 27T maximum energy stored = wW
energy dissipated per cycle P
where W is the maximum stored energy and P is the average power loss.
At resonant frequency, the electric and magnetic energies are equal and in
time quadrature. When the electric energy is maximum, the magnetic energy is zero
and vice versa. The total energy stored in the resonator is obtained by integrating
the energy density over the volume of the resonator:
We = J~ IEI2 dv = Wm= J~ IHI2 dv = W (4316)
v v
where IE Iand IH Iare the peak values of the field intensities.
The average power loss in the resonator can be evaluated by integrating the
power density as given in Eq. (2512) over the inner surface of the resonator.
Hence
(4317)
where HI is the peak value of the tangential magnetic intensity and R
s
is the surface
resistance of the resonator.
Substitution of Eqs. (4316) and (4317) in Eq. (4315) yields
Q = wJLfvl
H
I2 dv (4318)
R
s
Is IHI /2 da
Since the peak value of the magnetic intensity is related to its tangential and normal
components by
IHI2 = IHI 12 + IHn l
2
where H
n
is the peak value of the normal magnetic intensity, the value of IH
I
12 at the
resonator walls is approximately twice the value of I H 1
2
averaged over the volume.
So the Q of a cavity resonator as shown in Eq. (4318) can be expressed approxi
mately by
(4319)
wJL(volume)
Q = 2R
s
(surface areas)
140 Microwave Waveguides and Components Chap. 4
An unloaded resonator can be represented by either a series or a parallel resonant
circuit. The resonant frequency and the unloaded Qo of a cavity resonator are
fo = 27rvLC
Qo = woL
R
(4320)
(4321)
If the cavity is coupled by means of an ideal N: 1 transformer and a series inductance
L
s
to a generator having internal impedance Zg, then the coupling circuit and its
equivalent are as shown in Fig. 435.
N:l
Z,
V,
(a) (b)
Figure 435 Cavity coupled to a generator. (a) Coupling circuit. (b) Equivalent
circuit.
The loaded Qe of the system is given by
woL
Qe = R + N
2
Z for IN
2
L
s
i ~ IR + N
2
Zg 1
g
The coupling coefficient of the system is defined as
K == N
2
Z
g
R
and the loaded Qe would become
woL Qo
Qe = R(l + K) = 1+K
Rearrangement of Eq. (4324) yields
1 1 I
=+
Qe Qo Qex!
where Qex! = Qo/ K = woL/(KR) is the external Q.
There are three types of coupling coefficients:
1. Critical coupling: If the resonator is matched to the generator, then
K = I
(4322)
(4323)
(4324)
(4325)
(4326)
Sec. 4.4 Microwave Hybrid Circuits 141
The loaded Qe is given by
(4327)
2. Overcoupling: If K > 1, the cavity terminals are at a voltage maximum in the
input line at resonance. The normalized impedance at the voltage maximum is
the standingwave ratio p. That is
The loaded Qe is given by
K=p (4328)
(4329)
Qo
Qe = 1 + P
3. Undercoupling: If K < 1, the cavity terminals are at a voltage minimum and
the input terminal impedance is equal to the reciprocal of the standingwave ra
tio. That is,
The loaded Qe is given by
1
K =
P
(4330)
(4331)
7
Cl. 6
0
";:
5
os
..
..
1;
~
.:0
c::
3
:a
c::
os
iii
 p
Qe  p + 1Qo
The relationship of the coupling coefficient K and the standingwave ratio is
shown in Fig. 436.
o
Coupling coefficient K
Figure 436 Coupling coefficient ver
sus standingwave ratio.
4·4 MICROWAVE HYBRID CIRCUITS
A microwave circuit ordinarily consists of several microwave devices connected in
some way to achieve the desired transmission of a microwave signal. The intercon
nection of two or more microwave devices may be regarded as a microwave junc
tion. Commonly used microwave junctions include such waveguide tees as the E
142 Microwave Waveguides and Components Chap. 4
(443)
(444)
(4 41)
(4 4 2)
VI = hllII + h
l2
V
2
lz = h21 II + h
22
V
2
II = YII VI + YlzV2
lz = Y21 VI + Y22 VI
[
Yll
Y21
Y parameters: =
plane tee, Hplane tee, magic tee, hybrid ring (ratrace circuit), directional coupler,
and the circulator. This section describes these microwave hybrids, which are shown
in Fig. 441.
A twoport network is shown in Fig. 442. From network theory a twoport
device can be described by a number of parameter sets, such as the H, Y, Z, and
ABeD parameters.
H parameters:
Collinear arms
Port I
Collinear arms
Port 3
Port I
H
(a) Eplane tee (b) Hplane tee
4
Zo
(c) Magic tee
(2n + I) A,
, 4 "I
G)
0
V
Coupling holes
(e) Directional coupler
Port 1 QPort 3
(f) Circulator
Figure 441 Microwave hybrids. (a) Eplane tee. (b) H plane tee. (c) Magic tee.
(d) Hybrid ring. (e) Directional coupler. (f) Circulator.
Sec. 4.4 Microwave Hybrid Circuits 143
+
It
/2
Vi
Twoport
V
2
device
Figure 442 Twoport network.
(445)
(446)
VI = zllI1 + zI2 lz
V2 = zzlII + z221z
[
VI] = [Zll
Z parameters: V _
Z  Z21
ABeD parameters: : :
All these network parameters relate total voltages and total currents at each of the
two ports. For instance,
(449)
(4410) (open circuit)
(short circuit)
VII
h
ll
= I;
VII h
12
=
V
z
1,=0
If the frequencies are in the microwave range, however, the H, Y, and Z parameters
cannot be measured for the following reasons:
1. Equipment is not readily available to measure total voltage and total current at
the ports of the network.
2. Short and open circuits are difficult to achieve over a broad band of frequen
cies.
3. Active devices, such as power transistors and tunnel diodes, frequently will not
have stability for a short or open circuit.
Consequently, some new method of characterization is needed to overcome these
problems. The logical variables to use at the microwave frequencies are traveling
waves rather than total voltages and total currents. These are the S parameters,
which are expressed as
(44lla)
(4411b)
Figure 443 shows the S parameters of a twoport network.
VV'' al
Sll SI2
zQ
V,
b
l
S21
S22
b
2
Figure 443 Twoport network.
144
4·4·1 Waveguide Tees
Microwave Waveguides and Components Chap. 4
As noted, waveguide tees may consist of the Eplane tee, Hplane tee, magic tee,
hybrid rings, corners, bends, and twists. All such waveguide components are dis
cussed in this section.
Tee junctions. In microwave circuits a waveguide or coaxialline junction
with three independent ports is commonly referred to as a tee junction. From the S
parameter theory of a microwave junction it is evident that a tee junction should be
characterized by a matrix of third order containing nine elements, six of which
should be independent. The characteristics of a threeport junction can be explained
by three theorems of the tee junction. These theorems are derived from the equiva
lentcircuit representation of the tee junction. Their statements follow
1. A short circuit may always be placed in one of the arms of a threeport junc
tion in such a way that no power can be transferred through the other two
arms.
2. If the junction is symmetric about one of its arms, a short circuit can always be
placed in that arm so that no reflections occur in power transmission between
the other two arms. (That is, the arms present matched impedances.)
3. It is impossible for a general threeport junction of arbitrary symmetry to
present matched impedances at all three arms.
The Eplane tee and Hplane tee are described below.
Eplane tee (series tee). An Eplane tee is a waveguide tee in which the
axis of its side arm is parallel to the E field of the main guide (see Fig. 444). If the
collinear arms are symmetric about the side arm, there are two different transmis
sion characteristics (see Fig. 445). It can be seen from Fig. 444 that if the E
plane tee is perfectly matched with the aid of screw tuners or inductive or capacitive
windows at the junction, the diagonal components of the scattering matrix, SI!, S22,
and 5
33
, are zero because there will be no reflection. When the waves are fed into
the side arm (port 3), the waves appearing at port 1 and port 2 of the collinear arm
will be in opposite phase and in the same magnitude. Therefore
(4412)
It should be noted that Eq. (4412) does not mean that S\3 is always positive and S23
Port 3
Figure 444 Eplane tee
Sec. 4.4 Microwave Hybrid Circuits 145
Out
_
__InPort ,
Port ~ n n [ a : ~ r t 2
(a)
In
_
_ R Port ,
Port In I I ItPort 2
Out Out

(b)
Figure 445 Twoway transmission of
Eplane tee. (a) Input through main arm.
(b) Input from side arm.
(4413)
is always negative. The negative sign merely means that SI3 and S23 have opposite
signs. For a matched junction, the S matrix is given by
[
0 SI2 SI3]
S = S21 0 S23
S31 S32 0
From the symmetry property of S matrix, the symmetric terms in Eq. (4413) are
equal and they are
(4414)
From the zero property of S matrix, the sum of the products of each term of any
column (or row) multiplied by the complex conjugate of the corresponding terms of
any other column (or row) is zero and it is
(4415)
Hence
(4416)
This means that either SI3 or St3' or both, should be zero. However, from the unity
property of S matrix, the sum of the products of each term of anyone row (or
column) multiplied by its complex conjugate is unity; that is,
S2l Stl + S3l Sf\ =
S
12
St2 + S32 Sf2 =
Sl3St3 + S23 St3 =
(4417)
(4418)
(4419)
Substitution of Eq. (4414) in (4417) results in
IS121
2
= 1  IS131
2
= 1  IS231
2
(4420)
Equations (4419) and (4420) are contradictory, for if SI3 = 0, then S23 is also
146 Microwave Waveguides and Components Chap. 4
zero and thus Eq. (4419) is false. In a similar fashion, if S23 = 0, then S13 becomes
zero and therefore Eq. (4420) is not true. This inconsistency proves the statement
that the tee junction cannot be matched to the three arms. In other words, the diago
nal elements of the S matrix of a tee junction are not all zeros.
In general, when an Eplane tee is constructed of an empty waveguide, it is
poorly matched at the tee junction. Hence Sij "* 0 if i = j. However, since the
collinear arm is usually symmetric about the side arm, IS131 = \S23\ and SI1 = S22.
Then the S matrix can be simplified to
S = [ ~ : :
S13
(4421)
Hplane tee (shunt tee). An Hplane tee is a waveguide tee in which the
axis of its side arm is "shunting" the E field or parallel to the H field of the main
guide as shown in Fig. 446.
Port I
Figure 446 H plane tee.
It can be seen that if two input waves are fed into port 1 and port 2 of the
collinear arm, the output wave at port 3 will be in phase and additive. On the other
hand, if the input is fed into port 3, the wave will split equally into port 1 and port 2
in phase and in the same magnitude. Therefore the S matrix of the H plane tee is
similar to Eqs. (4413) and (4421) except that
(4422)
4·4·2 Magic Tees (Hybrid Tees)
A magic tee is a combination of the Eplane tee and Hplane tee (refer to Fig.
447). The magic tee has several characteristics:
Port 3
Port 2
Collinear
arms
Port I
Earm
Figure 447 Magic tee.
Sec. 4.4 Microwave Hybrid Circuits 147
(4423)
1. If two waves of equal magnitude and the same phase are fed into port 1 and
port 2, the output will be zero at port 3 and additive at port 4.
2. If a wave is fed into port 4 (the H arm), it will be divided equally between port
1 and port 2 of the collinear arms and will not appear at port 3 (the E arm).
3. If a wave is fed into port 3 (the E arm), it will produce an output of equal mag
nitude and opposite phase at port 1 and port 2. The output at port 4 is zero.
That is, 5
43
= 5
34
= o.
4. If a wave is fed into one of the collinear arms at port 1 or port 2, it will not
appear in the other collinear arm at port 2 or port 1 because the E arm causes a
phase delay while the H arm causes a phase advance. That is, 5
12
= 5
21
= O.
Therefore the S matrix of a magic tee can be expressed as
[
~ ~ : : ~ : : ]
S=
5
31
5
32
0 0
5
41
5
42
0 0
The magic tee is commonly used for mixing, duplexing, and impedance measure
ments. Suppose, for example, there are two identical radar transmitters in equipment
stock. A particular application requires twice more input power to an antenna than
either transmitter can deliver. A magic tee may be used to couple the two transmit
ters to the antenna in such a way that the transmitters do not load each other. The
two transmitters should be connected to ports 3 and 4, respectively, as shown in
Fig. 448. Transmitter 1, connected to port 3, causes a wave to emanate from port
1 and another to emanate from port 2; these waves are equal in magnitude but oppo
site in phase. Similarly, transmitter 2, connected to port 4, gives rise to a wave at
port 1 and another at port 2, both equal in magnitude and in phase. At port 1 the
two opposite waves cancel each other. At port 2 the two inphase waves add to
gether; so double output power at port 2 is obtained for the antenna as shown in Fig.
448.
To antenna
Port I
Transmitter 2
Figure 448 Magic teecoupled trans
mitters to antenna.
4·4·3 Hybrid Rings (Rat.Race Circuits)
A hybrid ring consists of an annular line of proper electrical length to sustain stand
ing waves, to which four arms are connected at proper intervals by means of series
or parallel junctions. Figure 449 shows a hybrid ring with series junctions.
148 Microwave Waveguides and Components Chap. 4
Figure 449 Hybrid ring.
(4424)
The hybrid ring has characteristics similar to those of the hybrid tee. When a
wave is fed into port 1, it will not appear at port 3 because the difference of phase
shifts for the waves traveling in the clockwise and counterclockwise directions is
180°. Thus the waves are canceled at port 3. For the same reason, the waves fed into
port 2 will not emerge at port 4 and so on.
The S matrix for an ideal hybrid ring can be expressed as
r
0 5
12
0 5
14
]
S = 5
21
0 5
23
0
o 5
32
0 5
34
5
41
0 5
43
0
It should be noted that the phase cancellation ocurs only at a designated frequency
for an ideal hybrid ring. In actual hybrid rings there are small leakage couplings,
and therefore the zero elements in the matrix of Eq. (4424) are not quite equal to
zero.
4·4·4 Waveguide Corners, Bends, Bnd Twists
The waveguide corner, bend, and twist are shown in Fig. 4410. These waveguide
components are normally used to change the direction of the guide through an arbi
trary angle.
In order to minimize reflections from the discontinuities, it is desirable to have
the mean length L between continuities equal to an odd number of quarterwave
lengths. That is,
(4425)
where n = 0, I, 2, 3, ... , and A
g
is the wavelength in the waveguide. If the mean
length L is an odd number of quarter wavelengths, the reflected waves from both
ends of the waveguide section are completely canceled. For the waveguide bend, the
minimum radius of curvature for a small reflection is given by Southworth [2] as
R = 1.5b for an E bend (4426)
Sec. 4.5 Directional Couplers
R = 1.5a for an H bend
149
(4427)
where a and b are the dimensions of the waveguide bend as illustrated in Fig.
4410.
(a)
(c)
(b)
(d)
Figure 4410 Waveguide corner, bend, and twist. (a) Eplane corner.
(b) Hplane corner. (c) Bend. (d) Continuous twist.
4·5 DIRECTIONAL COUPLERS
A directional coupler is a fourport waveguide junction as shown in Fig. 451. It
consists of a primary waveguide 12 and a secondary waveguide 34. When all
ports are terminated in their characteristic impedances, there is free transmission of
power, without reflection, between port 1 and port 2, and there is no transmission of
power between port 1 and port 3 or between port 2 and port 4 because no coupling
exists between these two pairs of ports. The degree of coupling between port 1 and
port 4 and between port 2 and port 3 depends on the structure of the coupler.
The characteristics of a directional coupler can be expressed in terms of its
coupling factor and its directivity. Assuming that the wave is propagating from port
1 to port 2 in the primary line, the coupling factor and the directivity are defined,
Port I
Port 3
Primary
waveguide
Coupling
device
Secondary
waveguide
Port 2
Port 4
Figure 451 Directional coupler.
150
respectively, by
Microwave Waveguides and Components
PI
Coupling factor (dB) = 10 10glO 
P
4
P
4
Directivity (dB) = 10 10glO 
P
3
Chap. 4
(451)
(452)
where PI = power input to port I
P
3
= power output from port 3
P
4
= power output from port 4
It should be noted that port 2, port 3, and port 4 are terminated in their char
acteristic impedances. The coupling factor is a measure of the ratio of power levels
in the primary and secondary lines. Hence if the coupling factor is known, a fraction
of power measured at port 4 may be used to determine the power input at port I.
This significance is desirable for microwave power measurements because no distur
bance, which may be caused by the power measurements, occurs in the primary
line. The directivity is a measure of how well the forward traveling wave in the pri
mary waveguide couples only to a specific port of the secondary waveguide. An
ideal directional coupler should have infinite directivity. In other words, the power
at port 3 must be zero because port 2 and port 4 are perfectly matched. Actually,
welldesigned directional couplers have a directivity of only 30 to 35 dB.
Several types of directional couplers exist, such as a twohole directional
couler, fourhole directional coupler, reversecoupling directional coupler
(Schwinger coupler), and Bethehole directional coupler (refer to Fig. 452). Only
the very commonly used twohole directional coupler is described here.
(a)
Coupling holes
(c)
(b)
(d)
Figure 45·2 Different directional couplers. (a) Twohole directional coupler.
(b) Fourhole directional coupler. (c) Schwinger coupler. (d) Bethehole directional
coupler.
Sec. 4.5 Directional Couplers 151
(453)
451 TwoHole Directional Couplers
A twohole directional coupler with traveling waves propagating in it is illustrated in
Fig. 453. The spacing between the centers of two holes must be
where n is any positive integer.
,,
Itl
__' + A ___
Canceled __A __ Added
Port I
Port 3
Primary
Secondary
waveguide
waveguide
Port 2
Port 4
Figure 453 Twohole directional
coupler.
A fraction of the wave energy entered into port 1 passes through the holes and
is radiated into the secondary guide as the holes act as slot antennas. The forward
waves in the secondary guide are in the same phase, regardless of the hole space,
and are added at port 4. The backward waves in the secondary guide (waves are pro
gressing from right to left) are out of phase by (2L/A
g
)27T rad and are canceled at
port 3.
452 5 Matrix of a Directional Coupler
In a directional coupler all four ports are completely matched. Thus the diagonal ele
ments of the S matrix are zeros and 
(454)
As noted, there is no coupling between port 1 and port 3 and between port 2 and
port 4. Thus
(455)
(456)
Consequently, the S matrix of a directional coupler becomes
l
0 SI2 0 S14]
S = S21 0 S23 0
o S32 0 S34
S41 0 S43 0
Equation (456) can be further reduced by means of the zero property of the S ma
trix, so we have
(457)
152 Microwave Waveguides and Components
Chap. 4
5
21
5f, + 541 5!3 = 0
Also from the unity property of the S matrix, we can write
512 5T2 + 5145T4 =
Equations (457) and (458) can also be written
15
12
1!5
14
! = 15
32
115
34
1
15
21
11523 1= 154] 11543 1
Since 5
12
= 5
21
, 5
14
= 5
41
, 5
23
= 5
32
, and 5
34
= 5
43
, then
1512 1= 15341
1514 1= 1523 1
Let
512 = 534 = P
where p is positive and real. Then from Eq. (458)
P(5t3 + 541 ) = 0
Let
5
23
= 541 = jq
where q is positive and real. Then from Eq. (459)
p2 + q2 = 1
The S matrix of a directional coupler is reduced to
S ~ ~ i ~ ~ ~ 1
(458)
(459)
(4510)
(4511)
(4512)
(4513)
(4514)
(4515)
(4516)
(4517)
(4518)
Example 451: Directional Coupler
A symmetric directional coupler with infinite directivity and a forward attenuation of
20 dB is used to monitor the power delivered to a load Zt (see Fig. 454). Bolometer
1 introduces a VSWR of 2.0 on arm 4; bolometer 2 is matched to arm 3. If bolometer 1
12
Generator '" r"'IC'""::::7r,
Bolometer 2 Bolometer I
Figure 454 Power measurements by directional coupler.
Sec. 4.5 Directional Couplers 153
reads 8 mW and bolometer 2 reads 2 mW, find: (a) the amount of power dissipated in
the load Ze; (b) the VSWR on arm 2.
Solution The wave propagation in the directional coupler is shown in Fig. 455.
SWR = 2.0
8mW
900 mW .......900 mW
r. " ZQ __{ L {I ~ I O O m W 
_ I mW'c...J(
1mW
, .l. , Port 2
Figure 455 Wave propagation in the directional coupler.
a. Power dissipation at Ze.
1. The reflection coefficient at port 4 is
pl 21 1
I
f
l=p+l=2"+1="3
2. Since the incident power and reflected power are related by
P = P+ If\2
where P+ = incident power and P  = reflected power, then
1 rr ~
If\ ="3= \jp:;= \ j ~
The incident power to port 4 is Pt = 9 mW, and the reflected power from port
4 is Pi = 1 mW.
3. Since port 3 is matched and the bolometer at port 3 reads 2 mW, then 1 mW
must be radiated through the holes.
4. Since 20 dB is equivalent to a power ratio of 100: 1, the power intput at port 1 is
given by
PI = lOON = 900 mW
and the power reflected from the load is
P
2
 = 100 x (l mW) = 100 mW
5. The power dissipated in the load is
P
e
= Pi  P
2
 = 900  100 = 800 mW
154 Microwave Waveguides and Components
b. The reflection coefficient is calculated as
Irl= rr = !lOO=!
'VP+ 'V900 3
Then the VSWR on arm 2 is
1+lrll+t
P = I  1 r I = I  t =2.0
Chap. 4
4·5·3 Hybrid Couplers
Hybrid couplers are interdigitated microstrip couplers consisting of four parallel strip
lines with alternate lines tied together. A single ground plane, a single dielectric,
and a single layer of metallization are used. This type of coupler, called a Lange hy
brid coupler [3], has four ports, as shown in Fig. 456.
I' ~ \ f/_'>1
3
\ ~ _ 4 ,1
Figure 456 Lange hybrid coupler.
A signal wave incident in port 1 couples equal power into ports 2 and 4, but
none into port 3. There are two basic types of Lange couplers: 180
0
hybrids and 90
0
(quadrature) hybrids. The latter are also called 3dB directional couplers.
Hybrid couplers are frequently used as components in microwave systems or
subsystems such as attenuators, balanced amplifiers, balanced mixers, modulators,
discriminators, and phase shifters. The hybrid has a directivity of over 27 dB, a re
turn loss of over 25 dB, an insertion loss of less than 0.13 dB, and an imbalance of
less than 0.25 dB over a 40% bandwidth.
In modern microwave circuit design, Lange hybrid couplers are commonly
Sec. 4.5 Directional Couplers 155
(4519)
(4520)
used in balanced amplifier circuitry for highpower and broadbandwidth applica
tions, as shown in Fig. 457.
Singlestage or cascaded doublestage GaAs MESFEf chips are connected in
parallel to two 3dB and 90degree Lange hybrid couplers. Their basic relationship
can be expressed by the following three equations:
SII = HS11a  Sllb)
S22 = ~ (S22a  S22b)
and
Gain = I S21 1
2
= ~ 1S21a + S2lb 1
2
(4521)
where a and b indicate the two GaAs MESFET chips, and 1 and 2 refer to the input
and output ports, respectively. The VSWRs of the balanced amplifier can be ex
pressed as
and
VSWR = I + IS221
I  IS221
GaAs MESFET a
for the input port
for the output port
(4522)
(4523)
Output
power
I
Input 11
power I
_I
I
I
I
I
I
1
1
I
I
I
1
I
I
son
Lange
coupler
I
1
12
I
1
14
I
GaAs MESFET b
Lange
coupler
1
I
I
I
1
1
I
I
1
1
1
I
I
I
'
'ion
Figure 457 Balanced amplifier wi th Lange couplers.
Theoretically, if the two GaAs MESFEf chips (or four chips in a doublestage
amplifier circuit) are identical, the amplifier is balanced and its VSWR will be unity.
Practically, however, characteristics of the two GaAs MESFEf chips are not actu
ally measured and they may not be the same. When their characteristics are differ
ent, the amplifier will not be balanced and manual tuning will be needed to balance
it. Therefore, for mass production it is necessary to characterize the GaAs MESFET
156 Microwave Waveguides and Components Chap. 4
chips in advance before placing them in the microwave integrated circuit in order to
minimize the tuning work, reduce the production cost, and increase the hybrid re
producibility.
Example 452: Operation of a Balanced Amplifier
A GaAs MESFET balanced amplifier with two Lange couplers has the following
parameters:
S parameters:
Input signal power:
Power gain of each GaAs chip:
S11. = Sllb
S22. = S22b
P;n = 200 mW
Gain = 10 dB
Determine: (a) the input and output VSWRs; (b) the output power in watts; (c) the lin
ear output power gain in dB.
Solution
a. From Eqs. (4522) and (4523), the input and output VSWRs are unity.
b. The output power is
P
OUI
= 200 x 10 x 2 = 4000 mW = 4 W
c. Because two GaAs chips are in parallel, the linear output power gain is
Gain = 10 log (2) = 3 dB
4·6 CIRCULATORS AND ISOLATORS
Both microwave circulators and microwave isolators are nonreciprocal transmission
devices that use the property of Faraday rotation in the ferrite material. In order to
understand the operating principles of circulators and isolators, let us describe the
behavior of ferrites in the nonreciprocal phase shifter.
A nonreciprocal phase shifter consists of a thin slab of ferrite placed in a
rectangular waveguide at a point where the dc magnetic field of the incident wave
mode is circularly polarized. Ferrite is a family of MeO . Fez 0
3
, where Me is a di
valent iron metal. When a piece of ferrite is affected by a dc magnetic field, the fer
rite exhibits Faraday rotation. It does so because the ferrite is nonlinear material and
its permeability is an asymmetric tensor [4], as expressed by
B = flU (461)
where
it = JLo(l + Xm) (462)
[X.
jK
~ ]
Xm = j ~
Xm
(463)
0
Sec. 4.6 Circulators and Isolators 157
(468)
which is the tensor magnetic susceptibility. Here X is the diagonal susceptibility and
K is the offdiagonal susceptibility.
When a dc magnetic field is applied to a ferrite, the unpaired electrons in the
ferrite material tend to line up with the dc field because of their magnetic dipole mo
ment. However, the nonreciprocal precession of unpaired electrons in the ferrite
causes their relative permeabilities (/J:, /J;) to be unequal and the wave in the fer
rite is then circularly polarized. The propagation constant for a linearly polarized
wave inside the ferrite can be expressed as [4]
'Y± = jwV'E/JO(/J+K:) (464)
where
/J = 1 + Xm (465)
/J: = /J + K (466)
/J; = /J  K (467)
The relative permeability /Jr changes with the applied dc magnetic field as given by
/J± = 1 + 'YeM
e
r I'Ye IH
dc
=+= W
where 'Ye = gyromagnetic ratio of an electron
Me = saturation magnetization
w = angular frequency of a microwave field
H
dc
= dc magnetic field
/J: = relative permeability in the clockwise direction (right or positive
circular polarization)
/J; = relative permeability in the counterclockwise direction (left or negative
circular polarization)
It can be seen from Eq. (468) that if w = I'Ye IH
dc
, then /J: is infinite. This
phenomenon is called the gyromagnetic resonance of the ferrite. A graph of /Jr is
plotted as a function of H
dc
for longitudinal propagation in Fig. 461.
If /J: is much larger than /J; (/J: ~ /J;), the wave in the ferrite is rotated in
IJ
r
o
I ~
I
I
I
I +
: IJ
r
Figure 461 Curves of JLr versus H
dc
for axial propagation.
158 Microwave Waveguides and Components Chap. 4
the clockwise direction. Consequently, the propagation phase constant /3+ for the
forward direction differs from the propagation phase constant Wfor the backward
direction. By choosing the length of the ferrite slab and the dc magnetic field so that
1T
W = (13+  W)€ = 
2
(469)
a differential phase shift of 90
0
for the two directions of propagation can be ob
tained.
4·6·1 Microwave Circulators
A microwave circulator is a multiport waveguide junction in which the wave can
flow only from the nth port to the (n + l)th port in one direction (see Fig. 462).
Although there is no restriction on the number of ports, the fourport microwave
circulator is the most common. One type of fourport microwave circulator is a com
bination of two 3dB sidehole directional couplers and a rectangular waveguide
with two nonreciprocal phase shifters as shown in Fig. 463.
Port 4
Port 2 Figure 462 The symbol of a circulator.
Coupler I Coupler 2
r , r""
I I I I
I I I I
Primary guide
I !I Phase shifter II I
I 1 _I I
I IWI = 180° w2 =90°1 I 180°
I II
I It I I .,
I I d 1:""1
'I L.. ....LLJ 1
1 iw3 =0° W4 =90° I I 270°
II 1 1L..+Port4
II :1 Phase shifter Ii I 90°
IL.._ ..
1 I I I
Port I
Port 3
Secondary guide
Figure 4·63 Schematic diagram of fourport circulator.
Sec. 4.6 Circulators and Isolators 159
(4610)
(4611) rad/s W2  W4 = 2n7T
The operating principle of a typical microwave circulator can be analyzed with
the aid of Fig. 463. Each of the two 3dB couplers in the circulator introduces a
phase shift of 90°, and each of the two phase shifters produces a certain amount of
phase change in a certain direction as indicated. When a wave is incident to port 1,
the wave is split into two components by coupler I. The wave in the primary guide
arrives at port 2 with a relative phase change of 180°. The second wave propagates
through the two couplers and the secondary guide and arrives at port 2 with a rela
tive phase shift of 180°. Since the two waves reaching port 2 are in phase, the power
transmission is obtained from port I to port 2. However, the wave propagates
through the primary guide, phase shifter, and coupler 2 and arrives at port 4 with a
phase change of 270°. The wave travels through coupler 1 and the secondary guide,
and it arrives at port 4 with a phase shift of 90°. Since the two waves reaching port
4 are out of phase by 180°, the power transmission from port 1 to port 4 is zero. In
general, the differential propagation constants in the two directions of propagation in
a waveguide containing ferrite phase shifters should be
WI  W3 = (2m + 1)7T rad/s
where m and n are any integers, including zeros. A similar analysis shows that a
wave incident to port 2 emerges at port 3 and so on. As a result, the sequence of
power flow is designated as I ~ 2 ~ 3 ~ 4 ~ I.
Many types of microwave circulators are in use today. However, their princi
ples of operation remain the same. Figure 464 shows a fourport circulator con
structed of two magic tees and a phase shifter. The phase shifter produces a phase
shift of 180°. The explanation of how this circulator works is left as an exercise for
the reader.
..
Phase shifter
Figure 464 A fourport circulator.
A perfectly matched, lossless, and nonreciprocal fourport circulator has an S
matrix of the form
(4612)
I
0 5
12
5
13
5\41
S = 5
2
\ 0 5
23
5
24
5
31
5
32
0 5
34
5
41
5
42
5
43
0
Using the properties of 5 parameters as described previously, the S matrix in Eq.
160
(4612) can be simplified to
Microwave Waveguides and Components Chap. 4
r ~
0 0
~ ]
s=
0 0
(4613)
1 0
0 1
4·6·2 Microwave Isolators
An isolator is a nonreciprocal transmission device that is used to isolate one compo
nent from reflections of other components in the transmission line. An ideal isolator
completely absorbs the power for propagation in one direction and provides lossless
transmission in the opposite direction. Thus the isolator is usually called uniline.
Isolators are generally used to improve the frequency stability of microwave genera
tors, such as klystrons and magnetrons, in which the reflection from the load affects
the generating frequency. In such cases, the isolator placed between the generator
and load prevents the reflected power from the unmatched load from returning to the
generator. As a result, the isolator maintains the frequency stability of the generator.
Isolators can be constructed in many ways. They can be made by terminating
ports 3 and 4 of a fourport circulator with matched loads. On the other hand, isola
tors can be made by inserting a ferrite rod along the axis of a rectangular waveguide
as shown in Fig. 465. The isolator here is a Faradayrotation isolator. Its operating
principle can be explained as follows [5]. The input resistive card is in the yz plane,
and the output resistive card is displaced 45° with respect to the input card. The dc
magnetic field, which is applied longitudinally to the ferrite rod, rotates the wave
plane of polarization by 45°. The degrees of rotation depend on the length and di
ameter of the rod and on the applied dc magnetic field. An input TE
IO
dominant
mode is incident to the left end of the isolator. Since the TE
IO
mode wave is perpen
dicular to the input resistive card, the wave passes through the ferrite rod without at
tenuation. The wave in the ferrite rod section is rotated clockwise by 45° and is nor
mal to the output resistive card. As a result ofrotation, the wave arrives at the output
Resistive
vane
~ ~
E 
z __ 
_r:.
Input  Reflected
waveguide ........,/ wave
vector
Direction
of rotation
Ferrite rod
Figure 465 Faradayrotation isolator.
Problems
161
end without attenuation at all. On the contrary, a reflected wave from the output end
is similarly rotated clockwise 45° by the ferrite rod. However, since the reflected
wave is parallel to the input resistive card, the wave is thereby absorbed by the input
card. The typical performance of these isolators is about IdB insertion loss in for
ward transmission and about 20 to 30dB isolation in reverse attenuation.
REFERENCES
[1] SAAD, T., and R. C. HANSEN, Microwave Engineer's Handbook, Vol. 1. Artech House,
Dedham, Mass., 1971.
[2] SOUTHWORTH, G. E., Principles and Applications of Waveguide Transmission. Chapters 8
and 9. D. Van Nostrand Company, Princeton, N.J., 1950.
[3] LANGE, J. Interdigited stripline quadrature hybrid. IEEE Trans. on Microwave Theory and
Techniques, MTT17, No. 12, 11501151, December 1969.
[4] SOOHOO, R. F., Theory and Applications of Ferrites. PrenticeHall, Inc., Englewood
Cliffs, N.J., 1960.
[5] BOWNESS, C., Microwave ferrites and their applications. Microwave J., 1, 1321, July
August 1958.
SUGGESTED READINGS
LIAO, S. Y., Engineering Applications of Electromagnetic Theory. West Publishing Com
pany, St. Paul, Minn., 1988.
RIZZI, P. A., Microwave Engineering: Passive Circuits. PrenticeHall, Inc., Englewood
Cliffs, N.J., 1988.
PROBLEMS
Rectangular waveguides
41. An airfilled rectangular waveguide has dimensions of a = 6 em and b = 4 em. The
signal frequency is 3 GHz. Compute the following for the TE
IO
, TEol , TEll, and TM
lI
modes:
a. Cutoff frequency
b. Wavelength in the waveguide
c. Phase constant and phase velocity in the waveguide
d. Group velocity and wave impedance in the waveguide
42. Show that the TM
o1
and TM
IO
modes in a rectangular waveguide do not exist.
43. The dominant mode TE
IO
is propagated in a rectangular waveguide of dimensions
a = 6 em and b = 4 em. The distance between a maximum and a minimum is
4.47 em. Determine the signal frequency of the dominant mode.
44. A TEll mode of 10 GHz is propagated in an airfilled rectangular waveguide. The mag
162 Microwave Waveguides and Components
netic field in the z direction is given by
R = Ho cos ( ~ ) cos ( ~ ) A/m
Chap. 4
The phase constant is f3 = 1.0475 rad/cm, the quantities x and yare expressed in cen
timeters, and a = b = v'6 are also in centimeters. Determine the cutoff frequency Ie,
phase velocity v ~ , guided wavelength A ~ , and the magnetic field intensity in the y di
rection.
45. A rectangular waveguide is designed to propagate the dominant mode TE
IO
at a fre
quency of 5 OUz. The cutoff frequency is 0.8 of the signal frequency. The ratio of the
guide height to width is 2. The timeaverage power flowing through the guide is I kW.
Determine the magnitudes of electric and magnetic intensities in the guide and indicate
where these occur in the guide.
46. An airfilled rectangular waveguide has dimensions of a = 6 cm and b = 4 cm. The
guide transports energy in the dominant mode TE
IO
at a rate of I horsepower (746 1). If
the frequency is 20 OUz, what is the peak value of electric field occurring in the guide?
47. An impedance of (0.5  jOo4)Zo is connected to a rectangular waveguide. A capac
itive window with a susceptance jB = jOo4Yo is located at a distance of 0.210.. from the
load.
a. Determine the VSWR on the line in the absence of the window.
b. Find the VSWR on the line in the presence of the window.
48. An airfilled rectangular waveguide with dimensions of 3 cm x I cm operates in the
TE
IO
mode at 10 OUz. The waveguide is perfectly matched and the maximum E field
existing everywhere in the guide is 10
3
VIm. Determine the voltage, current, and wave
impedance in the waveguide.
49. The dominant mode TE
IO
is propagated in a rectangular waveguide of dimensions
a = 2.25 cm and b = I cm. Assume an air dielectric with a breakdown gradient of
30 kV/cm and a frequency of 10 OUz. There are no standing waves in the guide. De
termine the maximum average power that can be carried by the guide.
410. A rectangular waveguide is terminated in an unknown impedance at z = 25 cm. A
dominant mode TE
IO
is propagated in the guide, and its VSWR is measured as 2.8 at a
frequency of 8 OUz. The adjacent voltage minima are located atz = 9046 cm and
z = 12.73 cm.
a. Determine the value of the load impedance in terms of Zoo
b. Find the position closest to the load where an inductive window is placed in order to
obtain a VSWR of unity.
c. Determine the value of the window admittance.
411. A rectangular waveguide is filled by dielectric material of E, = 9 and has inside di
mensions of 7 x 3.5 cm. It operates in the dominant TE
IO
mode.
a. Determine the cutoff frequency.
b. Find the phase velocity in the guide at a frequency of 2 OUz.
c. Find the guided wavelength A ~ at the same frequency.
412. The electric field intensity of the dominant TE
IO
mode in a lossless rectangular wave
guide is
. (7TX) _.{3 Z
E
v
= Eo Sill ~ e } ~ for I > Ie
a. Find the magnetic field intensity H.
b. Compute the cutoff frequency and the timeaverage transmitted power.
Problems 163
Circular waveguides
413. An airfilled circular waveguide is to be operated at a frequency of 6 GHz and is to
have dimensions such that/
c
= 0.81 for the dominant mode. Determine:
a. The diameter of the guide
b. The wavelength A
R
and the phase velocity v
R
in the guide
414. An airfilled circular waveguide of 2 cm inside radius is operated in the TEO! mode.
a. Compute the cutoff frequency.
b. If the guide is to be filled with a dielectric material of E
r
= 2.25, to what value
must its radius be changed in order to maintain the cutoff frequency at its original
value?
415. An airfilled circular waveguide has a radius of 1.5 cm and is to carry energy at a fre
quency of 10 GHz. Find all TE and TM modes for which transmission is possible.
416. A TEll wave is propagating through a circular waveguide. The diameter of the guide is
10 cm, and the guide is airfilled.
a. Find the cutoff frequency.
b. Find the wavelength A
R
in the guide for a frequency of 3 GHz.
c. Determine the wave impedance in the guide.
417. An airfilled circular waveguide has a diameter of 4 cm and is to carry energy at a fre
quency of 10 GHz. Determine all TE
np
modes for which transmission is possible.
418. A circular waveguide has a cutoff frequency of 9 GHz in dominant mode.
a. Find the inside diameter of the guide if it is airfilled.
b. Determine the inside diameter of the guide if the guide is dielectricfilled. The rela
tive dielectric constant is E
r
= 4.
Microwave cavities
419. A coaxial resonator is constructed of a section of coaxial line and is opencircuited at
both ends. The resonator is 5 em long and filled with dielectric of E
r
= 9. The inner
conductor has a radius of I em and the outer conductor has a radius of 2.5 em.
a. Find the resonant frequency of the resonator.
b. Determine the resonant frequency of the same resonator with one end open and one
end shorted.
420. An airfilled circular waveguide has a radius of 3 em and is used as a resonator for TEO!
mode at 10 GHz by placing two perfectly conducting plates at its two ends. Determine
the minimum distance between the two end plates.
421. A fourport circulator is constructed of two magic tees and one phase shifter as shown
in Fig. 464. The phase shifter produces a phase shift of 180°. Explain how this circu
lator works.
422. A coaxial resonator is constructed of a section of coaxial line 6 em long and is short
circuited at both ends. The circular cavity has an inner radius of 1.5 em and an outer
radius of 3.5 em. The line is dielectricfilled with E
r
= 2.25.
a. Determine the resonant frequency of the cavity for TEMoO! .
b. Calculate the quality Qof the cavity.
423. A rectangularcavity resonator has dimensions of a = 5 cm, b = 2 cm, and d =
15 em. Compute:
a. The resonant frequency of the dominant mode for an airfilled cavity
b. The resonant frequency of the dominant mode for a dielectricfilled cavity of
E
r
= 2.56
164 Microwave Waveguides and Components Chap. 4
424. An undercoupled resonant cavity is connected to a lossless transmission line as shown
in Fig. P424. The directional coupler is assumed to be ideal and matched on all arms.
The unloaded Qof the cavity is 1000 and the VSWR at resonance is 2.5.
a. Calculate the loaded Qe of the cavity.
b. Find the reading of bolometer 2 if bolometer I reads 4 mW.
c. Compute the power dissipated in the cavity.
Bolometer
~
Directional
coupler
Hybrid circuits
Cavity
P424
425. A microwave transmission system consists of a generator, an overcoupled cavity, two
ideal but not identical dual directional couplers with matched bolometers, and a load
Ze. The lossless transmission line has a characteristic impedance Zo. The readings of
the four bolometers (1, 2, 3, and 4) are 2 mW, 4 mW, 0 and 1 mW, respectively. The
system is shown in Fig. P425.
a. Find the load impedance Ze in terms of Zo .
b. Calculate the power dissipated by Ze .
c. Compute the power dissipated in the cavity.
d. Determine the VSWR on the input transmission line.
e. Find the ratio of QdQo for the cavity.
~ Bolometers
/ ~ / ~
Cavity
15 dB
Z,
.,..
.,.
P425
426. A symmetric directional coupler has an infinite directivity and a forward attenuation of
20 dB. The coupler is used to monitor the power delivered to a load Ze as shown in
Fig. P426. Bolometer 1 introduces a VSWR of 2.0 on arm 1; bolometer 2 is matched
to arm 2. If bolometer 1 reads 9 mW and bolometer 2 reads 3 mW:
a. Find the amount of power dissipated in the load Ze .
b. Determine the VSWR on arm 3.
Problems
Bolometer 2
VSWR = 2.0
Bolometer I
P426
165
427. A semicircularcavity resonator has a length of 5 em and a radius of 2.5 em.
a. Calculate the resonant frequency for the dominant mode if the cavity is airfilled.
b. Repeat part (a) if the cavity is loaded by a dielectric with a relative constant of 9.
428. The impedance matrix of a certain lumpedelement network is given by
[Zij] = [ ~ ~ ]
Determine the scattering matrix by using Sparameter theory and indicate the values of
the components:
429. A hybrid waveguide is constructed of two identical rectangular waveguides across each
other at the center and works as a fourport device. Write a general scattering matrix
and then simplify it as much as possible by inspection of geometric symmetry and by
use of the known phases of the electric waves.
4·30. A helical slowwave structure has a pitch P of 2 mm and a diameter of 4 em. Calculate
the wave velocity in the axial direction of the helix.
431. Two 3dB quadrature Lange couplers are used in a GaAs MESFET balanced amplifier
circuit with the following parameters:
MESFET a: Reflection coefficients
Forward transmission
coefficient
MESFET b: Reflection coefficients
Forward transmission
coefficient
Slla = 0.7488/158.3°
Sna = 0.8521/155.7°
S21a = 1.3500/8.5"
Sllb = 0.6210/175.9°
S22b = 0.7727/151.4°
S21b = 1.2200/19.1°
Compute: a. The input and output VSWRs
b. The power gain in dB for the balanced amplifier
c. The power loss in dB if one MESFET fails
d. The linear output power gain in dB
Chapter 5
Microwave Transistors
and Tunnel Diodes
5·0 INTRODUCTION
Microwave solidstate devices are becoming increasingly important at microwave
frequencies. These devices can be broken down into four groups. In the first group
are the microwave bipolar junction transistor (BJT), the heterojunction bipolar tran
sistor (HBT), and the tunnel diodes. This group is discussed in this chapter. The
second group includes microwave fieldeffect transistors (FETs) such as the junc
tion fieldeffect transistors (JFETs), metalsemiconductor fieldeffect transistors
(MESFETs), high electron mobility transistors (HEMTs), metaloxidesemiconduc
tor fieldeffect transistors (MOSFETs), the metaloxidesemiconductor transistors
and memory devices, and the chargecoupled devices (CCDs). This group is de
scribed in Chapter 6. The third group, which is characterized by the bulk effect of
the semiconductor, is called the transferred electron device (TED). These devices
include the Gunn diode, limited spacechargeaccumulation diode (LSA diode), in
dium phosphide diode (InP diode), and cadmium telluride diode (CdTe diode). This
group is analyzed in Chapter 7. The devices of the fourth group, which are operated
by the avalanche effect of the semiconductor, are referred to as avalanche diodes:
the impact ionization avalanche transittime diodes (IMPATT diodes), the trapped
plasma avalanche triggered transittime diodes (TRAPATT diodes), and the barrier
injected transittime diodes (BARITT diodes). The avalanche diodes are studied in
Chapter 8. All those microwave solidstate devices are tabulated in Table 501.
In studying microwave solidstate devices, the electrical behavior of solids is
the first item to be investigated. In this section it will be seen that the transport of
charge through a semiconductor depends not only on the properties of the electron
but also on the arrangement of atoms in the solids. Semiconductors are a group of
substances having electrical conductivities that are intermediate between metals and
insulators. Since the conductivity of the semiconductors can be varied over wide
166
Sec. 5.0 Introduction
TABLE 5·0·1 MICROWAVE SOLIDSTATE DEVICES
f
Microwave BJT
Microwave transistor HBT
Tunnel diode
167
Fieldeffect
transistors
1
JFEf
MESFEf, HEMT
MOSFEf
NMOS, PMOS, CMOS
Memories
CCO
Microwave
solidstate
devices Transferred electron
devices
Avalanche transit
time devices
i
Gunn diode
LSA diodes
InP diodes
CdTe diodes
~
Read diode
IMPATT diode
TRAPATT diode
BARITT diode
ranges by changes in their temperature, optical excitation, and impurity content,
they are the natural choices for electronic devices. The properties of important
semiconductors are tabulated in Table 502.
The energy bands of a semiconductor playa major role in their electrical be
havior. For any semiconductor, there is a forbidden energy region in which no al
lowable states can exist. The energy band above the forbidden region is called the
conduction band, and the bottom of the conduction band is designated by Ec. The
energy band below the forbidden region is called the valence band, and the top of
TABLE 5·0·2 PROPERTIES OF IMPORTANT SEMICONDUCTORS
Bandgap Mobility at 300
0
K
energy (eV) (cm
2
/V. s)
Relative
dielectric
Semiconductor
OOK
300
0
K Holes Electrons constant
C 5.51 5.47 1600 1800 5.5
Ge 0.89 0.803 1900 3900 16
• Si 1.16 1.12 450 1600 1l.8
AISb 1.75 1.63 420 200 II
GaSb 0.80 0.67 1400 4000 15
GaAs 1.52 1.43 400 8500 13.1
GaP 2.40 2.26 75 110 10
InSb 0.26 1.80 750 78,000 17
InAs 0.46 0.33 460 33,000 14.5
InP 1.34 1.29 150 4600 14
CdS 2.56 2.42 50 300 10
CdSe 1.85 1.70 800 10
ZnO 3.20 200 9
ZnS 3.70 3.60 165 8
168 Microwave Transistors and Tunnel Diodes
Chap. 5
the valence band is designated by E
v
• The separation between the energy of the low
est conduction band and that of the highest valence band is called the bandgap en
ergy E
g
, which is the most important parameter in semiconductors.
Electron energy is conventionally defined as positive when measured upward
whereas the hole energy is positive when measured downward. A simplified band di
agram is shown in Fig. 501.
11
Figure 501 Energyband diagram.
In the I970s, it seemed that microwave transistors would be useful for generat
ing power up to about 5 GHz. Since their inception, avalanche diodes have produced
in excess of 4 W continuous wave (CW) at 5 GHz. Gunn diodes had been considered
only for local oscillators or lowpower transmitter applications, but recent results in
dicate that a single Gunn diode can generate an output power of 1 W at X band. At
higher microwave frequencies, and even well into the millimeter range, limited
spacechargeaccumulation diodes (LSAS) can provide the highest peak power of
any solidstate device, up to 250W in C band, 100 W in X band, and 50 W in Ku
band. Since the pulsed Gunn and TRAPATT diodes are essentially transittime
devices, their operating frequency is approximately determined by the thickness of
the active layer in the diode. An operating frequency of 10 GHz requires an active
layer thickness on the order of 10 ,urn (microns). Thus only a limited voltage can be
applied to such a thin layer because of breakdown limitations. Consequently, the
1000
~ 100
~

LS)
"
r;..:.r....

~
"'
"
~ 1 ' t ?
 ~
~
P""4 "/1'1'
('I)'
C""
/,1/,1
~
"
~
2 4 6 8 10
Frequency (GHz)
20
Figure 502 Peakpower levels
achieved by microwave diode.
Sec. 5.1 Microwave Bipolar Transistors 169
peak power capability of both the pulsed Gunn diodes and the TRAPATT diodes is
greatly limited at higher frequencies. On the other hand, the peak power capability
of an LSA diode is approximately proportional to the square of the thickness of the
active layer because its operating frequency is independent of the thickness of the
active layer. Thus the LSA diode is capable of producing higher peak power than ei
ther the pulsed Gunn diodes or the TRAPATT diodes. Figure 502 shows peak
power versus frequency for these three devices.
Solidstate microwave power sources are widely used in radar, communica
tions, navigational and industrial electronics, and medical and biological equipment.
Representative applications for microwave solidstate devices are listed in Table
503.
TABLE 5·0·3 APPLICATIONS OF MICROWAVE SOLIDSTATE DEVICES
Devices Applications
Transistor Lband transmitters for telemetry
systems and phased array radar
systems
L and Sband transmitters for
communications systems
TED C, X, and Kuband ECM amplifiers
for wideband systems
X and Kuband transmitters for radar
systems, such as traffic control
IMPATT Transmitters for millimeterwave
communications systems
TRAPATT Sband pulsed transmitters for phased
array radar systems
BARITT Local oscillators in communications
and radar receivers
5·1 MICROWAVE BIPOLAR TRANSISTORS
Advantages
Low cost, low power supply, reliable,
high CW power output, light weight
Low power supply (12 V), low cost,
light weight, reliable, low noise, high
gain
Low power supply, low cost, reliable,
high CW power output, light weight
High peak and average power, reliable,
low power supply, low cost
Low cost, low power supply, reliable,
low noise
The invention of the transistor (contraction for transfer resistor) by William Shock
ley. and his coworkers at Bell Laboratory in 1948 had a revolutionary impact on elec
tronic technology in general and on solidstate devices in particular. Since then tran
sistors and related semiconductor devices have replaced vacuum tubes for lower
power sources. Microwave power transistor technology has advanced significantly
during the past three decades. The microwave transistor is a nonlinear device, and its
principle of operation is similar to that of the lowfrequency device, but requirements
for dimensions, process control, heat sinking, and packaging are much more severe.
For microwave applications, the silicon (Si) bipolar transistors dominate for
frequency range from UHF to about S band (about 3 GHz). As the technology im
proves, the upper frequency limit for these devices is continuously being extended,
and at the present time the devices are capable of producing useful power up to
22 GHz. The majority of bipolar transistors of current interest are fabricated from
silicon, although GaAs devices offer prospects for improvements in operating fre
170 Microwave Transistors and Tunnel Diodes Chap. 5
quency, in high temperatures, and in radiation hardness. The Si bipolar transistor is
inexpensive, durable, integrative, and offers gain much higher than available with
competing fieldeffect devices. It has moderate noise figure in RF amplifiers and 1/f
noise characteristics that are about 1020 dB superior to GaAs MESFETs. For these
reasons, the Si bipolar transistors dominate in amplifier applications for the lower
microwave frequencies and are often the devices of choice for local oscillators.
5·1·1 Physical Structures
All microwave transistors are now planar in form and almost all are of the silicon
npn type. The geometry can be characterized as follows: (a) interdigitated, (b)
overlay, and (c) matrix (also called mesh or emitter grid) as shown in Fig. 511.
The interdigitated type is for a small signal and power, but the overlay type and
matrix type are for small power only. The figure of merit for the three surface
geometries shown in Fig. 511 is listed in Table 511 [l).
E
. c::::J
mI tters c::::J
~
Base c::::J
metalization
Emitter
metalization
(a) Interdigitated (b) Overlay
 Emitter metalization
I ~   t     p+ base diffusion
Base metalization
(c) Matrix
Figure 511 Surface geometries of microwave power transistor. (From H. Sobol
and F. Sterzer [l]: reprinted by permission of lEEE. lnc.)
For highfrequency applications, the npn structure is preferred because the
electron mobility (JLn = 1500 cm
2
/V. s) is much higher than the hole mobility
(JLp = 450 cm
2
/V . s). Figure 512 shows an example of the densities for an npn
transistor. The density unit is in cm
2
/V . s.
Although there are many ways of fabricating a transistor, diffusion and ion im
plantation are generally used. For example, the structure would typically start with a
lightly doped ntype epitaxial layer as the collector. The base region would be
formed by counterdoping the base region ptype by diffusion. The emitter would
Sec. 5.1 Microwave Bipolar Transistors
171
TABLE 5·1·1 FIGURE OF MERIT (M) OF VARIOUS SURFACE GEOMETRIES
Surface geometry and unit cell
'.     Overlay
Q III I: 0
! f J:=E.."?i  t.
Emitter : w I I i c:J
W +5
w +511 Q+p __1 Matrix
rlt
0, wi D
, TI
+,
Emitter I c::::::J I
. ., Base p+
EP
M=
BA
2(f + w)
(w+s)(f+p)
2(f + w)
f(w + s)
2(f + w)
(w+s)(f+p)
Source: From H. Sobol and F. Sterzer [I]; reprinted by permission of IEEE, Inc.
be formed by a shallow heavily doped ntype diffusion or by ion implantation. The
emitter and base contacts are generally located on the semiconductor surface in an
interdigital, planar arrangement. The interdigital geometry always provides for
n + I base fingers, where n is the number of emitter fingers. The number of fingers
varies with Jhe application, with more fingers required as the output power capabil
Emitter Base Collector
.Y

I II'
P N
E
II/
I
c
r
/I" I. 7 X 1011
I'" 3.7 X 10
9
1'1' 3.7 X lOiS
I'" 3.7 X 10
12
R
s
 ,I +  ,I +
'I
B
'I
V
EB
V
CB

Figure 512 Carrier densities of an npn transistor.
172 Microwave Transistors and Tunnel Diodes Chap. 5
ity of the transistor increases. Additional fingers, however, increase the device para
sitics and degrade the noise and upper frequency capability of the devices.
Figure 513 shows two schematic diagrams for a bipolar junction transistor
(BJT): (a) the cross section of a discrete npn planar BJT and (b) the cross section
of a chiptype npn integrated BJT.
The pnp bipolar junction transistor is a complementary structure of the npn
BJT by interchanging p for nand n for p. The pnp BJT is basically fabricated by
first forming an ntype layer in the ptype substrate; then ap+type region is devel
Insulator layer
SiOz
Collector contact
Emitter contact
Basecollector junction
ncollector layer
(a) Discrete npn planar BJT
Emitter contact
Insulator layer
SiOz
Collector contact
n
(b) Integrated chiptype IIpn BJT
Figure 513 Schematic diagrams of bipolar junction transistors. (After D. Navon
[2J.)
Sec. 5.1 Microwave Bipolar Transistors
173
oped in the n layer. Finally, metallic contacts are introduced to the p+ region and
p layer through the windows opened in the oxide layer and to the p region at the
bottom.
5·1·2 Bipolar Transistor Configurations
In general, there are two types of bipolar transistors: pnp and npn. In practical
applications, a transistor can be connected as three different configurations: common
base (CB), common emitter (CE), and common collector (CC), depending on the
polarities of the bias voltages connected to its terminals.
Commonbase configuration. The commonbase (CB) configuration refers
to the one where the emitter (input circuit) and collector (output circuit) terminals
are common to the base as shown in Fig. 514.
IHII' transistor 11/Jn transistor
E C E C
(a) CB configuration (b) CB configuration
Figure 514 Commonbase configurations for pnp and npn transistors.
(511)
(512) I
c
= some function (VCB, Ie)
The CB configuration is also called the groundedbase configuration. For a p
np transistor, the largest current components are caused by holes. Holes flow from
the emitter to the collector and down toward ground out of the base terminal. In an
npn transistor all current and voltage polarities are negative to those in a pnp
transistor. The CB configuration of a transistor is usually used in amplifier applica
tions. Its input voltage V
EB
and output current I
c
can be expressed in terms of the out
put voltage V
CB
and input current Ie as
V
EB
= some function (VCB , Ie)
Commonemitter configuration. Most transistors have their emitter,
rather than their base, as the terminal to both input and output networks. Such a
174 Microwave Transistors and Tunnel Diodes Chap. 5
configuration is known as commonemitter (CE) or groundedemitter configuration
as shown in Fig. 515.
In the CE configuration, the input current In and the output voltage VeE are in
dependent variables, whereas the input voltage V
nE
and output current I
c
can be writ
ten as
V
nE
= some function (V
CE
, In)
I
c
= some function (VeE, In)
(513)
(514)
The CE configuration is commonly used as a switch or pulse transistor amplifier.
This is because the transistor is open at the cutoff mode and is closed at the satura
tion mode.
Boi
Bo+f
p
n
I'
c
c
Boi
BoH
n
I'
n
c
c
Figure 515 Commonemitter configurations for pnp and npn transistors.
Commoncollector configuration. Another transistorcircuit configuration
is called the commoncollector or groundedcollector configuration as shown in Fig.
516.
In a commoncollector (CC) configuration, the output voltage of the load is
taken from the emitter terminal instead of the collector as in the commonbase and
commonemitter configurations. When the transistor is cut off, no current will flow
in tl'!e emitter terminal at the load. When the transistor is operating in a saturation
mode, the load current reaches toward its maximum. Therefore the CC configura
tion transistor can also be used as a switch or pulse amplifier. The significant differ
Sec. 5.1 Microwave Bipolar Transistors
c c
175
Bol
Ii
11 BQl
11
Ii
11
VEE
V
CE VEl'
V
n
C C
B B
R, R,
£
VEE VeE VEE
Vet"
Figure 516 Commoncollector configuration for pnp and npn transistors.
ence, however, between commonemitter and commoncollector configurations is
that the commoncollector amplifier has no voltage gain.
Hybridpi equivalent model. The hybridpi equivalent model is commonly
used in the normal active mode of the commonemitter configuration for small
signal operation. Fig. 517 shows the hybridpi equivalent model of the common
emitter configuration.
For a smallsignal operation, the nonlinear or ac parameters of a hybridpi
equivalent model can be expressed as
i
e
= hie ib + hoeVee
iJVbe I
where hie = iJi
b
Vce=constant
h = iJVbe I
re iJi
b
.
'b
h = iJi
e
I
fe iJ'
lb Vee
h
oe
iJv
a
.
'b
(515)
(516)
(517)
(519)
(5110)
176 Microwave Transistors and Tunnel Diodes Chap. 5
...c::>o,:.......,<>c
Bo.+I
EO.L.____4lO
(a) Commonemitter npn transistor
C
b' C
E o      _ ~  ~   + _ _ _  ___oE
(b) Hybridpi model
,....... ........0 C
E o       ~     +          o E
(c) Simplified hybridpi model at low frequency
Figure 517 Hybridpi equivalent
model.
(5111)
When the dimensions of a bipolar junction transistor become very small, their Z, Y,
or H parameters cannot be measured because the input and output terminals cannot
be openly and shortly realized. Therefore, the S parameters are commonly mea
sured. In transistor design, it is necessary to convert the S parameters into Y
parameters for the network component computations.
An incremental change of the emitter voltage .:1"V
b
'e at the input terminal will
induce an incremental change of the collector current .:1i
c
at the output terminal.
Then the mutual conductance (or transconductance) of a smallsignal transistor is
defined by
ai
c
I
g =
m aVb'e
Vce
From the diode junction theory the thermal equilibrium density at the junction is
equal to the minority density times the forwardbias voltage factor. That is,
np(O) = npoeVpVT (5112)
Sec. 5.1
and
Microwave Bipolar Transistors
171
(5113)
Substitution of Eq.
yield
I
. I = qADnnp(O)
Ie L
n
(5112) into Eq. (5113) and differentiation of the resultant
(5114)
_Ii e I
gm  Vr
where V
T
= 26 mV at 300
0
K is the voltage equivalent of temperature
As the width of the base region is very narrow, C
b
;p C
e
, the diffusion capaci
tance in the base chargestorage is given by
dQb
Cb'e = dV
be
(5115)
and the total charges stored in the base is
Qb = qnp(O)WbA
2
Then the diffusion capacitance is expressed by
qAWbnp(O) W ~
Cb'e = 2V
T
= gm 2D
n
The voltage across the diffusion capacitance can be written as
(5116)
(5117)
(5118)
I ib
V
be
= jwC
The smallsignal input conductance of the emitter junction looking at the input of
the base is defined as
I In Ie gm
gb =  =  =  = 
R
b
V
T
h
FE
V
T
h
FE
where h
FE
is the linear or dc commonemitter current gain factor and
gm is the mutual conductance.
(5119)
Example 511: Equivalent Elements of a HybridPi CommonEmitter Circuit
A Si npn bipolar transistor has the following parameters:
Collector current:
Commonemitter current gain factor:
Operational temperature:
Crosssectional area:
Ie = 6 rnA
h
FE
= 120
T = 300° K
W
b
= 10
8
cm
2
178 Microwave Transistors and Tunnel Diodes Chap. 5
Compute: (a) the mutual conductance gm; (b) the input conductance gb and resistance
R;; (c) the electron diffusion coefficient D
n
; and (d) the diffusion capacitance C
be
.
Solution
a. The mutual conductance is
Ie 6 X 10
3
gm = V
T
= 26 X 103 = 0.23
b. The input conductance and resistance are
mho
gm 0.23 3
gb =  =  = 1. 92 X 10 mho
h
FE
120
R; = 521 ohms
c. The electron diffusion coefficient is
KT
D
n
= IAon = IAon V
T
= 1600 x 26 x 10
3
= 41.6 cm
2
/s
q
d. The diffusion capacitance is
, wi 023 10
8
Cbe = gm
2Dn
=. x 2 x 41.6 = 2.76pF
5·1·3 Principles of Operation
The bipolar junction transistor (BJT) is an active threeterminal device which is
commonly used as an amplifier or switch. Its principles of operation are discussed in
this section.
Modes of operation. A bipolar transistor can operate in four different
modes depending on the voltage polarities across the two junctions: normal (active)
mode, saturation mode, cutoff mode, and inverse (or inverted) mode as shown in
Fig. 518.
1. Normal Mode. If the emitter junction of an npn transistor is forwardbiased
and the collector is reversebiased, the transistor is operated in the normal
mode as shown in Fig. 518(a). The termjorward bias means that the posi
tive polarity of the bias voltage is connected to the p side and the negative po
larity to the n side for a pn junction; the opposite obtains for reverse bias.
Most transistor amplifiers are operated in normal mode, and its commonbase
current gain alpha is known as the normal alpha aN.
2. Saturation Mode. When both transistor junctions are forwardbiased, the
transistor is in its saturation mode with very low resistance, and acts like a
short circuit, as shown in Fig. 518(b).
3. Cutoff Mode. If both transistor junctions are reversebiased the transistor is
operated in its cutoff mode. As the current is cut off, the transistor acts like an
Sec. 5.1 Microwave Bipolar Transistors
(d) Inverse mode (c I Cutoff mode
179
0+ VCR
(b) Saturation mode
(a) Normal mode
Figure 518 Operational modes of an npn transistor.
open circuit. Both the cutoff and saturation modes of a transistor are used as
switching devices for the OFF and ON states. Fig. 518(c) shows the cutoff
mode biasvoltage connection.
4. Inverse Mode. When the emitter is reversebiased and the collector is
forwardbiased, the transistor is operated in the inverse (or inverted) mode,
and its current gain is designated as the inverse alpha a/. If the transistor is
symmetric, the normal alpha aN is nearly equal to the inverse alpha a/. The
two current gains, however, are not actually equal because of their unequal
dopings. The inverse mode is shown in Fig. 518(d). In practice, the inverse
mode is not commonly used except as a multiemitter transistor in TTL
(transistortransistor logic) logic gate.
Current flow in normal mode. When a transistor is properly biased, the
holes and electrons in the transistor will follow the field direction in motion. Figure
519 shows the current flow of an npn transistor.
The current flow in an ideal npn bipolar junction transistor is analyzed under
the following assumptions:
1. The resistivities of the semiconductor regions are low
2. The injected current densities are low
3. The spacecharge layer widening effects can be ignored
4. The current and voltage of np junction diodes follow the basic equation of
I = la(e V/VT  1) (5 1 20)
180 Microwave Transistors and Tunnel Diodes Chap. 5
Electron flux
      t iF
Hole flux
n
I
I
I
: /I
I
I
I'
I
I ____ ~ ___I_
I I
1
10
~ __ L ____ , __
fl/
l
:
I
I
'\: I I"e
Ie
~
I

I
I
pL
·
I
I
tI  I I
I
nt fie I
    ~
I
I /i I
I I
I I
leo
.
:
I I
I
I,"
X
0 W
Xc
lo
L
B

1+
 1+
I r
E C
Figure 519 Current flow in an npn transistor.
For a commonbase npn transistor, the emitter junction is forwardbiased and the
collector junction is reversebiased as shown in Fig. 519. Consequently, the emit
ter current IE consists of electron current I
nE
crossing from the emitter into the base
and the hole current I
pE
crossing from the base into the emitter. Since the doping of
the emitter is much larger than the doping of the base, the hole current is negligible.
However, not all the electrons crossing the emitter junction 1e reach the collector
junction J
e
because some of them combine with the holes in the ptype base. If Inc
is the electron current at the collector junction J
e
, there must be a recombination
current I
nE
 Inc leaving the base. When the emitter is opencircuited, then Ie = 0
and Inc = O. As a result, the collector current Ie is equal to the reverse saturation
current leo because the junction between base and collector is reversebiased. From
Fig. 519, we have
Ie = IpE + InE  I'li
(5121)
(5122)
and
Ie = leo  Inc (5123)
(5124)
For an npn transistor, leo consists of holes moving across the collector junction J
e
from right to left (collector to base) and electrons crossing J
e
in the opposite direc
tion. Since the reference direction for leo in Fig. 519 is assumed from left to right,
then, for an npn transistor, leo is positive for forwardbiased J
e
junction and leo is
negative for reversebiased J
e
junction. The saturation current leo at the J
e
junction
of an npn transistor is given by
_ AqDn
po
AqDppno _ A 2( D
n
D
p
)
leo  W + L
E
 qnj WN
a
+ LENd
Sec. 5.1 Microwave Bipolar Transistors 181
(5125a)
Also from Fig. 519, the sum of the three terminal currents should be zero and it is
Ie + Ie + I
B
= 0 (5125)
Equation (5125) can be verified by adding together Eqs. (5121) through
(5123).
Current flow in commonbase npn transistor. In a commonbase
configuration of an npn transistor as shown in Fig. 519, the emitter np junction
is forwardbiased and the collector pn junction is reverse biased. Their total current
flow can be found from the basic diffusion equation. The steadystate diffusion equa
tion for an npn transistor at lowlevel injection is given by
dn
p
In = AqD
n
dx
and
(5126)
where D
n
= electron diffusion constant
n
p
= minority electron carrier density in the p type base layer
n
po
= equilibrium minority electron carrier density in the p type base layer
x = distance measured from the base region as shown in Fig. 5110
Tn = electron lifetime
1/,,101
~ 
I·.mitter Base
/I

Collector
Figure 5110 Minoritycarrier densi
ties under normal active bias with negli
gible recombination.
The general solution of Eq. (5126) can be written as
(5127)
where C
1
and C
z
are constants to be determined by the boundary conditions
L
n
= ~ is the electron diffusion length
n
po
= nT/No is the massaction law
The boundary conditions at the edge of the emitter depletion layer in the base
side with a forwardbiased emitter junction is
np(O) = npoeVE!VT (5128)
182 Microwave Transistors and Tunnel Diodes Chap. 5
(5129)
(5130)
where V
E
= forwardbiased voltage across the emitter junction
V
T
= 26 X 10
3
V at 300° k is the voltage equivalent of temperature
The boundary condition at the depletionlayer edge of the reversebiased collector
junction is usually assumed to be
np(W) = 0
The two boundary conditions are shown in Fig. 5110.
The general solution of Eq. (5126) can be written as
( )
= (VdVT _ l)[sinh [(W  x)/L
n
] + (1 _sinh (x/Ln))]
n
p
x n
po
e sinh (W/ L
n
) n
po
sinh (W/ L
n
)
In almost all transistors, the base width is made very narrow (W ~ L
n
) so that
the minoritycarrier recombination in the base is negligible. As a result, the
boundary conditions specify the two end points of the base carrier concentration
with a straight line as shown in Fig. 5111. (Note: sinh y == y, cosh y == 1,
coth y == l/y, and sech y == 1  y2/2 for y ~ 1.)
0.8
0.6
S
,,"'
~
J
0.4
0.2
a
Distance .\"
Figure 5111 Minority carrier distri
W butions in base region as a function of
WI/
n
• (After S. Sze [3].)
For W ~ Ln , the minority carrier distribution of Eq. (5130) can be sim
plified to
(5131)
Then the boundary conditions for holes in the emitter and collector depletion regions
can be expressed, respectively, as
at x = XE (5132)
Sec. 5.1
and
Microwave Bipolar Transistors
atx = Xc
183
(5133)
where PEO = equilibrium minority hole density in the emitter region
pco = equilibrium minority hole density in the collector region
Substituting Eqs. (5132) and (5133) into Eq. (5127) yields the minority distri
butions in the emitter and collector regions as
PE(X) = PEO + PEO(e VE/VT  1) exp [(x + XE)/ L
n
] for x ::::;  XE (5134)
and
pc(x) = PCO + pea exp [(x  xc}/L
n
] for x ~ Xc (5135)
The total excess minoritycarrier charge in the base region is given by
l
w AqWnp(O)
Qn = Aq [np(x)  npo(x)] dx = 2
o
where A = cross section
The base recombination current for a carrier lifetime Tn is
AQn AqWnpo VIV
Inn =  = e E T
Tn 2T
n
(5136)
(5137)
According to the carrier injection processes, the minority electron density at
the reversebiased collector junction J
c
is usually assumed to be zero. That is,
npc = 0 at J
c
for x = W (5138)
(5139)
This assumption is reasonable because the electric field of the collector junction
sweeps carriers into the collector so that the collector is almost a perfect sink.
The electron current I
nE
which is injected from the emitter into the base at
x = 0 for L ~ W is proportional to the gradient of the minority carrier density and
is expressed as
I
nE
= AqD
n
dn
p
I = AqDnn
po
coth (WILn)[(e
VdVT
 1) + 1 ]
dx FO Ln cosh (WILn)
_  AqDnnT ( VIV 1) AqDnnT ' AqDnnT v /V
 eE.T   eET
NoW NoW NoW
The electron current which reaches the collector at x = W is
(5140)
The collector current Inc can also be expressed as
184 Microwave Transistors and Tunnel Diodes Chap. 5
(5141)
Inc = l nE  InB = lnE( 1  ~ : )
= lnE(1 2 : ~ J = I ~ ( l ~ ~ )
where L
E
= diffusion length of the emitter and exp (VE/V
T
) ~ 1 is assumed
Similarly, the hole currents are
I = AqDEpEo ( VdVT  1)
pE LE e
for x = XE (5142)
and
(5143) for x = Xc
I  AqDepeo
pC  L
e
where DE and Dc are the hole diffusion constants in the emitter and collector,
respectively
L
e
= diffusion length of the collector
The current flow in an npn transistor as described so far is an ideal model,
and its recombinationgeneration current is not counted. If the recombination cur
rent is considered, the current flow is the sum of the drift, the diffusion, and the
recombinationgeneration currents. That is,
I = I
dr
(drift) + I
df
(diffusion) + Irg (recombinationgeneration) (5144)
The recombinationgeneration current can be computed from the following equation
I
= AqnixdeVd(2VT)
rg
70
(5145)
where Xd = depletionlayer width
7
0
= effective minoritycarrier lifetime in the depletion layer
Figure 5112 shows currentvoltage (IV) characteristics of an ideal npn bipolar
transistor for a commonbase configuration.
There are three regions for the IV characteristics of an npn bipolar transis
tor:
1. Active Region: In this region the emitter junction is forwardbiased and the
collector junction is reversebiased. The collector current Ie is essentially in
dependent of collector voltage and depends only on the emitter current h.
When the emitter current is zero, the collector current is equal to the reverse
saturation current leo'
2. Saturation Region: In this region, as shown on the left side of Fig. 5112,
both emitter and collector junctions are forwardbiased. The electron current
flows from the n side across the collector junction to the p type base. As a re
sult, the collector current increases sharply.
Sec. 5.1 Microwave Bipolar Transistors
I
a ~ ~ ~ ~ ~ ~ n jr.IAclive region
IF = 40 rnA
40 _
~ 1,.
185
.... v
30
C
OJ
I::
"
"
(;
20
t)
."
"0
v
10
o
0.25 0
30
20
10
o
Culoff region
4
'
co
Collectorlobase voltage VCB in volts
Figure 5112 CurrentVoltage (IV) characteristics of an npn transistor.
3. Cutoff Region: In this region the emitter and collector junctions are both
reversebiased. Consequently, the emitter current is cut off to zero, as shown
in the lower right side of Fig. 5112.
Example 512: IV Characteristics of an npn Transistor
A silicon npn transistor at 300° K has the following parameters:
Find:
Base width:
Diffusion length in emitter:
Diffusion length in collector:
Base resistivity:
Emitter resistivity:
Collector resistivity:
Emitter junction voltage:
Collector junction voltage:
Crosssection area:
w = 10
5
cm
L
E
= 10
4
cm
L
c
= 5 X 10
4
cm
PB = 0.15 !1cm
PE = 0.006 !1cm
pc = 16 !1cm
V
E
= 0.5 V
V
c
= 0.6 V
A = 2 X 10
2
cm
2
a. The impurity densities in the emitter, base, and collector regions
b. The mobilities in the emitter, base, and collector regions
c. The diffusion lengths in the emitter, base, and collector regions
186 Microwave Transistors and Tunnel Diodes
d. The equilibrium densities in the emitter, base, and collector regions
e. The terminal currents
Solution
a. The impurity densities are read from Fig. AI in Appendix A as
N
dE
= 1 X 10
19
cm
3
in the ntype emitter region
NaB = 1.5 X 10
17
cm
3
in the ptype base region
N
dC
= 3 X 10
14
cm
3
in the ntype collector region
b. The mobilities are read from Fig. A2 in Appendix A as
ItPE = 80 cm
2
/V· s in the emitter
ItnE = 105 cm
2
/V' s in the emitter
ItPB = 400 cm
2
/V· s in the base
Itnc = 1600 cm
2
/V' s in the collector
c. The diffusion constants are computed to be
D
pE
= ItPEV
T
= 80 x 26 X 10
3
= 2.08 cm
2
/s
D
nE
= ItnEV
T
= 105 x 26 x 10
3
= 2.73 cm
2
/s
D
pB
= ItPBV
T
= 400 x 26 X 10
3
= 10.4 cm
2
/s
D
nc
= ItneV
T
= 1600 x 26 x 10
3
= 41.6 cm
2
/s
d. The equilibrium densities are
nPB = nTjNaB = (1.5 X 10
10
)2/(1.5 X 10
17
) = 1.5 X 10
3
cm
3
PEa = n'f/N
dE
= (1.5 x 10
10
)2/(1 x 10
19
) = 2.5 X 10
4
cm
3
Pca = n'f/N
dc
= (1.5 x 10
10
)2/(3 x 10
14
) = 7.5 X 10
5
cm
3
e. The terminal currents are computed as follows:
From Eq. (5139), the electron current in the emitter is
AqDnn'f v IV _ AqDpn'f ( v 10 V 1)
I
nE
=   e E T   e E T 
NoW LENd
2 X 10
2
x 1.6 X 10
19
x 2.73 x (1.5 x 10
10
)2
1.5 X 10
17
x 10 5
x exp [0.5/(26 x 10
3
)]
13.104 X 10/3 x 2.248 X 10
8
= 0.2946 rnA
Chap. 5
From Eq. (5142), the hole current in the emitter is
I
pE
= AqDEPEO (e VdVT  I) = AqDpn'f (e VE!VT)  1)
LE LENd
2 X 10
2
x 1.6 X 10
19
x 2.08 x (1.5 x 10
10
)2
104 X 1 X 1019 x (2.248 X 10
8
 1)
= 14.976 X 10
16
x 2.248 X 10
8
= 0.337 ItA
From Eq. (5124), the reverse saturation current in the collector is
Sec. 5.1 Microwave Bipolar Transistors
187
= 13.104 X  14.976 X 10
16
= 1.312 pA
From Eq. (5140), the electron current which reaches the collector is
AqDnnl VIV 3 I' 8 08
Inc =  NnW e E T = 1 .104 x ., x 2.24 X 1
= 0.2946 rnA
The emitter current is
h = lpE + I
nE
= 33.67 X  0.295 X
0.295 rnA
The collector current is
I
c
= I
co
 Inc = 1.312 X  (0.295 X 10
3
)
= 0.295 rnA
The current in the base terminal is
In = IpE  (InE  Ind + leo
= 33.67 X 10
8
 (29.46 X 10
5
+ 29.46 X + 1.312 X 10
12
= 0.337 ftA
Note: The recombinationgeneration currents in the spacecharge regions are not
counted.
5·1·4 Amplification Phenomena
Bipolar transistors are usually used for signal amplification. The amplification phe
nomena can be described from the commonbase and commonemitter transistors.
Commonbase npn transistor. The ratio of the output current to the in
put current for a small signal in a bipolar junction transistor is known as the current
gain alpha a, or h
fb
• The current gain of a commonbase pnp transistor is defined
by the current components crossing the emitter and collector junctions as
(5146)
a =
Ie + leo  h
Ie  fb
where leo = collectorjunction reverse saturation current with zero emitter current
Since lc and Ie have opposite signs, the alpha a, as defined, as always positive. Typ
ical numerical values of a are between 0.9 and 0.995.
188 Microwave Transistors and Tunnel Diodes
The emitter efficiency (or injection efficiency) is defined as
current of injected carriers at JE
l' = total emitter current
InE 1 (DpNaW)1
   1+'
 I
nE
+ I
pE
 I + IpEi I
nE
 DnNdL
E
Chap. 5
(5147)
where I
nE
= injected electron diffusion current at emitter junction 1£
I
pE
= injected hole diffusion current at emitter junction JE
The transport factor f3 * is defined as
injected carrier current reaching 1c
f3 *  ~            = : : . . . 
injected carrier current at h
Inc _ ~ = 1 _ W
2
l
nE
2T
n
D
n
2 L ~
where Inc = injected electron diffusion current at J
e
I
nE
= injected electron diffusion current at h
Ln = VTnD
n
is the electron diffusion length
At the collector we have
Ie = leo  Inc
Then the current gain can be expressed as
Inc
a =  = f3*1'
h
In the normal active mode, the collector current is given by
Ie = ah  leo
(5148)
(5149)
(5150)
(5151)
The current leo is the current crossing the pn junction, and it is expressed in Eq.
(5124). Then the complete expression of Ie for any V
e
and h is
Ie = ah + Ieo(I  eVc!VT) (5152)
where 1
0
= Ico is replaced.
Example 513: Silicon Bipolar Transistor
A silicon npn bipolar transistor operates in commonbase mode at 300° K and has the
following parameters:
Silicon intrinsic density:
Acceptor density in base region:
Donor density in emitter region:
Hole lifetime:
ni = 1.5 X 10
10
N
a
= 5 X 10
16
N
d
= 5 X 10
18
'T
p
= I
cm
3
cm  3
cm  3
I's
Sec. 5.1 Microwave Bipolar Transistors
Electron lifetime:
Cross section:
Base width:
Emitter length:
'Tn = I
A = 10
4
W = 10
3
L
E
= 10
2
cm
cm
189
Determine:
a. The mobilities J.tn and J.tp
b. The diffusion coefficients D
n
and D
p
c. The emitter efficiency factor 'Y
d. The transport factor f3
e. The current gain a
Solution
a. The mobilities are read from Fig. A2 in Appendix A as
J.tn = 200 cm
2
/V' s for N
dE
= 5 X 10
18
cm
3
J.tp = 500 cm
2
/V' s for N
a
= 5 X 10
16
cm
3
b. The diffusion coefficients are
D
n
= J.tn V
T
= 200 x 26 X 10
3
= 5.20 cm
2
/s
D
p
= 500 x 26 X 10
3
= 13.0 cm
2
/s
c. The emitter efficiency factor is
(
13.0 x 5 x 10
16
X 10
3
)1
'Y = I + 5.20 x 5 x 1018 X 102 = 0.997
d. The transport factor is
f3 * = 1
e. The current gain is
(10
3
)2
2 X 106 x 5.20 = 0.904
(5154)
(5153)
a = f3 *'Y = 0.904 x 0.997 = 0.90
Commonemitter npn transistor. In the active region of a common
emitter npn transistor, the emitter junction is forwardbiased and the collector
junction is reversebiased. The base current is
I
B
= (Ie + IE)
Combining this equation with Eq. (5151), we have
Ie = leo + ~
Ia Ia
In the cutoff region, if I
B
= 0, then IE =  Ie and the collector current is given by
leo
Ie = IE =  = ICED
1  a
(5155)
190
Microwave Transistors and Tunnel Diodes
Chap. 5
The actual collector current with the collector junction reversebiased and the base
junction opencircuited is designated by the symbol IeEo . We define the common
emitter current gain {3 or hie as
h
Ie + leo
{3 = fe = I
B
(5156)
Slnce Ie + h + Ie + leo = Q, we have
a
{3=Ia
(5157)
5.1.5 Power·Frequency Limitations
the questlon then arlses as to whether microwave power transistors have any limita
tions on their frequency and output power. The answer is yes. Several authors have
discussed this subject. Early [4] first introduced the powerfrequency limitations in
herent in (I) the limiting velocity of carriers in semiconductors and (2) the maxi
mum fields attainable in semiconductors without the onset of avalanche multiplica
tion. These basic ideas were later developed and discussed in detail by Johnson [5],
who made three
1. There is a maximum possible velocity of carriers in a semiconductor. This is
the "saturated drift velocity vs" and is on the order of 6 X 10
6
cm/s for elec
trons and holes in silicon and germanium.
2. There is a maximum electric field Em that can be sustained in a semiconductor
without having dielectric breakdown. This field is about 10
5
Vlcm in germa
nium and 2 X 10
5
Vlcm in silicon.
3. The maximum current that a microwave power transistor can carry is limited
by the base width.
With these three postulates Johnson derived four basic equations for the power
frequency limitations on microwave power transistors.
First equation: VoltageFrequency Limitation:
VmfT = Emv
s
= {2 X 1011 Vis for silicon
27T 1 X 1011 Vis for germanium
(5158)
is the chargecarrier transittime cutoff frequency
is the average time for a charge carrier moving at an average
velocity v to traverse the emittercollector distance L
V
m
= EmL
min
is the maximum allowable applied voltage
V
s
= maximum possible saturated drift velocity
Em = maximum electric field
1
wherefr =
27TT
L
T=
V
With the carriers moving at a velocity V
s
of 6 X 10
6
cm/s, the transit time can
Sec. 5.1 Microwave Bipolar Transistors 191
be reduced even further by decreasing the distance L. The lower limit on L can be
reached when the electric field becomes equal to the dielectric breakdown field.
However, the present state of the art of microwave transistor fabrication limits the
emittercollector length L to about 25 J.L m for overlay and matrix devices and to
nearly 250 J.Lm for interdigitated devices. Consequently, there is an upper limit on
cutoff frequency. In practice, the attainable cutoff frequency is considerably less
than the maximum possible frequency indicated by Eq. (5158) because the satu
rated velocity V
s
and the electric field intensity will not be uniform.
Second equation: CurrentFrequency Limitation:
( )
Emvs
ImX
c
/T = 27T
(5159)
where 1
m
= maximum current of the device
X
I I·
h
.. d
c = C = 2 f: C IS t e reactive Impe ance
WT 0 7T T 0
Co = collectorbase capacitance
It should be noted that the relationship 27T/Tro = 27T/Tr = I is used in deriving
Eq. (5159) from Eq. (5158). In practice, no maximum current exists because the
area of the device cannot be increased without bound. If the impedance level is zero,
the maximum current through a velocitysaturated sample might be infinite. How
ever, the limited impedance will limit the maximum current for a maximum attain
able power.
Third equation: PowerFrequency Limitation:
(
p X )1/2 f'. = Emv
s
m c JT 27T
(5160)
This equation was obtained by multiplying Eq. (5158) by Eq. (5159) and replac
ing Vml
m
by Pm. It is significant that, for a given device impedance, the power
capacity of a device must be decreased as the device cutoff frequency is increased.
For a given product of Emv
s
(that is, a given material), the maximum power that can
be delivered to the carriers traversing the transistor is infinite if the cross section of
the transistor can be made as large as possible. In other words, the value of the reac
tance Xc must approach zero. Thus Eq. (5160) allows the results to be predicted.
Figure 5113 shows a graph of Eq. (5160) and the experimental results reported
from manufacturers [6].
Fourth equation: Power GainFrequency Limitation:
(
G V; V. )1/21 = Emv
s
m th m 27T
where G
m
= maximum available power gain
Vth = KT/ e is the thermal voltage
K = Boltzmann's constant, 1.38 X 10
23
J/OK
(5161)
192 Microwave Transistors and Tunnel Diodes Chap. 5
Figure 5113 (P
m
K)1
/
2 versusfr.
10 (After B. C. De Loach [6]: reprinted by
permission of Academic Press.)
Absolute maximum
(Johnson)
0.1
IT in GHz
10
0.01
I 0
2
I      + ~ : _ _   ~ ~ r _  _ _ _ j
10
3
I      +  ~   ~       j
as
T = absolute temperature in degrees Kelvin
e = electron charge (1.60 X 10
19
C)
The maximum available power gain of a transistor was derived by Johnson [5]
(5162)
G
m
= (12)2 ZOU1
f Zin
where Zout and Zin are the output and input impedances, respectively. If the electrode
series resistances are assumed to be zero, the ratio of the output impedance to the
input impedance can be written
Zout = Cn
Zin Cout
(5163)
where Cn is the input capacitance and Cout is the output (basecollector) capacitance.
When the maximum total carrier charges Qm move to the collector in a carrierbase
transit time Tb and with a thermal voltage Yth' the input capacitance C
in
and the emit
ter diffusion capacitance Cd are related by
(5164)
The output capacitance is given by
C = ImTo
out V
m
(5165)
Substitution of Eqs. (5158), (5164), and (5165) in Eq. (5162) yields Eg.
(5161). The actual performance of a microwave transistor will fall far short of that
predicted by Eq. (5161). At present the highfrequency limit of a 28V silicon
npn transistor operating at the lW level is approximately 10 Ghz. Typical power
gains of microwave transistors lie in the 6 to 10dB range.
Sec. 5.2 Heterojunction Bipolar Transistors (HBTs) 193
Example 514: PowerFrequency Limitation
A certain silicon microwave transistor has the following parameters:
Reactance:
Transittime cutoff frequency:
Maximum electric field:
Saturation drift velocity:
Xc = In
fr = 4 GHz
Em = 1.6 X 10
5
V/cm
V
s
= 4 X 10
5
cm/s
Determine the maximum allowable power that the transistor can carry.
Solution. From Eq. (5160) the maximum allowable power is
p _ 1 (EmVs)2 _ 1 (1.6 X 10
5
X 4 X 10
5
)2 = 6.48 W
m  Xci} 211"  1 X (4 X 10
9
)2 211"
5·2 HETEROJUNCTION BIPOLAR TRANSISTORS (HBTs)
Bipolar transistors can be constructed as homojunction or heterojunction types of
transistors. When the transistor junction is jointed by two similar materials such as
silicon to silicon or germanium to germanium, it is a homojunction transistor. The
transistor junction formed by two different materials, such as Ge to GaAs, is called a
heterojunction transistor. So far only the ordinary homojunction transistors have
been discussed. In this section we study the heterojunction transistors.
5·2·1 Physical Structures
When the lattice constants of two semiconductor materials are matched, they can be
formed together as a heterojunction transistor. This lattice condition is very impor
tant because the lattice mismatch could introduce a large number of interface states
and degrade the heterojunction operation. Currently, Ge and GaAs are the two ma
terials commonly used for heterojunction structures because their lattice constants
(a = 5.646 Afor Ge and a = 5.653 Afor GaAs) are matched to within 1%. Since
each material may be either p type or n type, there are four possible heterojunction
combinations:
1. p Ge to p GaAs junction
2. p Ge to nGaAs junction
3. nGe to p GaAs junction
4. nGe to nGaAs junction
Fig. 521 shows the model diagram of a heterojunction transistor formed by nGe,
pGaAs, and nGaAs materials.
194
Microwave Transistors and Tunnel Diodes Chap. 5
E
B
c
Figure 52·1 Model diagram of a het
erojunction transistor.
5·2·2 Operational Mechanism
When an nGe and a pGaAs are isolated, their Fermi energy levels are not aligned,
as shown in Fig. 522 [7].
In Fig. 522, the vacuum level is used as reference, the work function is de
noted by </>, nGe is designated as 1, and p GaAs is referred to as 2. The different
energies of the conductionband edge and the valenceband edge are given by
AEc == Xl  XZ
and
AE
v
== E
gz
 E
g1
 AE
c
where X == electron affinity in eV
E
g
= bandgap energy in eV
Vacuum level
(521)
(522)
Figure 522 Energyband diagram for
isolated nGe and p GaAs.
Example 521: Heterojundion Bipolar Transistor (HBT)
A GeGaAs heterojunction transistor has the following parameters:
Lattice constant: Ge
GaAs
Electron affinity: Ge
GaAs
Energy gap: Ge
GaAs
al = 5.646 A
az = 5.653 A
Xl = 4.0 eV
XZ == 4.07 eV
E
g1
= 0.80 eV
E
gz
== 1.43 eV
Sec. 5.2 Heterojunction Bipolar Transistors (HBTs) 195
Determine:
a. The lattice match in percent
b. The conductionband differential between Ge and GaAs
c. The valenceband differential between Ge and GaAs
Solution
a. The lattice match is within 1%
b. The conductionband differential is
aE
c
= XI  X2 = 4.0  4.07 = 0.07 eV
c. The valanceband differential is
E
v
= E
g2
 E
g1
 aE
c
= 1.43  0.8  (0.07)
= 0.70 eV
When the two semiconductor materials are jointed together, their Fermi energy lev
els are aligned and their energy bands are depleted at the junction, as shown in Fig.
523 [7].
nGe
t
1
I
.lV iiii
E
c2
1/1
02
1
1. _I
1: pGaAs
AE
c
I
l I
1/IO\T
L
j1
Ecl L/i
         ~           4
~
Ev2
A tiE
v
Eu\r"1  I
I' • I ~ • I
I XI I X2 I
Figure 523 Energyband diagram for an nGepGaAs junction.
When the two materials are jointed together, the electrons in the nGe are
injected into the p GaAs, and the holes in the p GaAs are transferred to the nGe
until their Fermi energy levels are aligned. As a result, the energy bands at the junc
tion are depleted or bent. The bending energy then creates a builtin voltage in both
sides of the junction. The total builtin voltage is expressed by
t/io = t/iol + t/io2
where t/iol = barrier potential or portion of builtin voltage in nGe
t/ioz = barrier potential or portion of builtin voltage in p GaAs
(523)
196
Microwave Transistors and Tunnel Diodes
Chap. 5
At the junction, the electric flux D is continuous. That is,
D = EoErl'jgl = E
o
Er2'jg2
= EI 'jg 1 = E2'jg2
where Eo = permittivity of free space
E = permittivity
E
r
= relative permittivity or dielectric constant
'jg = electric field
The space charges on both sides of the junction are equal and it is given by
where XI = depletion width in nGe
Xl = depletion width in pGaAs
N
d
= donor density
N
a
= acceptor density
The electric fields in both sides can be written as
cP _ l/!ol  VI
(01 
Xl
and
cP _ 0/02  V2
(02 
X2
where VI = portion of biasvoltage in nGe
V
2
= portion of biasvoltage in p GaAs
Substitution of Eq. (524) into Eqs. (526) and (527) results in
(0/01  VI) ErlN
dl
= (%2  V
2
) Er2N
a2
(524)
(525)
(526)
(527)
(538)
For the heterojunction shown in Fig. 523, the electron current from nGe to
pGaAs is very small because the potential barrier of (%1 + %2 + AEc/q) across
the junction for electron injection is very high. In contrast, the hole current from the
pGaAs side to the nGe side is dominant because of the low potential barrier %2
for hole injection. Therefore, the junction current can be approximated as shown in
Eq. (5142) to be
(529)
where A = cross section
q = electron charge
D
p
= hole diffusion constant
P
no
= minority or equilibrium hole density in nGe
L
p
= hole diffusion length
V = bias voltage
V
T
= voltage equivalent of temperature
Sec. 5.2 Heterojunction Bipolar Transistors (HBTs)
197
5·2·3 Electronic Applications
Heterojunctions have been studied since 1951 and have many applications in photon
devices as described in Chapter 10. The heterojunction bipolar transistor is a poten
tial candidate for highspeed switching devices such as GaAs MESFETs. The analy
sis described previously can be applied to the structures of GeGaAs and GaAs
AIGaAs. In other heterojunction transistors, such as the GeSi structure, the lattice
mismatch (a = 5.646 Afor Ge and a = 5.431 Afor Si) causes a high interface state
density and recombination and tunnelingcurrent components must be counted.
Example 522: nGepGaAsnGaAs HBT
An nGep GaAsnGaAs heterojunction
parameters:
Donor density in nGe region:
Acceptor density in p ·GaAs region:
Hole lifetime:
Bias voltage at emitter junction:
Cross section:
Compute:
transistor at 300° K has the following
N
d
= 5 X 10
18
cm
3
N
a
= 6 X 10
16
c m ~ 3
T
p
= 6 X 10
6
sec
Vt;=l V
A = 2 X 10
2
cm
2
a. The builtin voltage in the p GaAs side
b. The hole mobility
c. The hole diffusion constant
d. The minority hole density in the nGe region
e. The minority electron density in the pGaAs region
f. The hole diffusion length
g. The emitterjunction current
Solution
a. The builtin voltage in the p GaAs side is
(
6 X 10
16
)
rf!02 = 26 X 10
3
In 1.8 x 10
6
= 0.63 V
b. The hole mobility is read from Fig. A2 in Appendix A as
IJp = 400 cm
2
/V· s
c. The hole diffusion constant is
D
p
= 400 x 26 X 10
3
= 10.40 cm
2
/s
d. The minority hole density in nGe is
(l.5 X 10
10
)2 _
Poo = 0
18
= 45 cm 3
5 x I
198
Microwave Transistors and Tunnel Diodes
e. The minority electron density in the p GaAs region is
(1.8 x 10
6
)2
5 4
X
10
3 3
n
po
= 6 X 1016 = . cm
f. The hole diffusion length is
L
p
= V'"6xI0:
6
:xI0.40 = 7.90 x 10
3
cm
g. The emitterjunction current is computed from Eq. (529) as
2 x 10
2
x 1.6 X 10
19
x 10.4 x 45 [e
l
/(26XIO 3) _
I = 7.9 X 103 I]
= 0.958 A
Chap. 5
5·3 MICROWAVE TUNNEL DIODES
After the publication of Esaki's classic paper on tunnel diodes in 1958, the potential
of tunnel diodes for microwave applications was quickly established. Prior to 1958
the anomalous characteristics of some pn junctions were observed by many scien
tists, but the irregularities were rejected immediately because they did not follow the
"classic" diode equation. Esaki, however, described this anomalous phenomenon by
applying a quantum tunneling theory. The tunneling phenomenon is a majority car
rier effect. The tunneling time of carriers through the potential energy barrier is not
governed by the classic transittime conceptthat the transit time is equal to the
barrier width divided by the carrier velocitybut rather by the quantum transition
probability per unit time. Tunnel diodes are useful in many circuit applications in
microwave amplification, microwave oscillation, and binary memory because of
their low cost, light weight, high speed, lowpower operation, low noise, and high
peakcurrent to valleycurrent ratio.
5·3·1 Principles of Operation
The tunnel diode is a negativeresistance semiconductor pn junction diode. The neg
ative resistance is created by the tunnel effect of electrons in the pn junction. The
doping of both the p and n regions of the tunnel diode is very highimpurity con
centrations of 10
19
to 10
20
atoms/cm
3
are usedand the depletionlayer barrier at the
junction is very thin, on the order of 100 Aor 10
6
cm. Classically, it is possible for
those particles to pass over the barrier if and only if they have an energy equal to or
greater than the height of the potential barrier. Quantum mechanically, however, if
the barrier is less than 3 Athere is an appreciable probability that particles will tun
nel through the potential barrier even though they do not have enough kinetic energy
to pass over the same barrier. In addition to the barrier thinness, there must also be
filled energy states on the side from which particles will tunnel and allowed empty
states on the other side into which particles penetrate through at the same energy
level. In order to understand the tunnel effects fully, let us analyze the energyband
pictures of a heavily doped pn diode. Figure 531 shows energyband diagrams of
a tunnel diode.
Sec. 5.3 Microwave Tunnel Diodes
199
rOpen,
V
o
Distance
(a) Tunnel diode under zerobias equilibrium
N
p
F.B.
N
Ec...,......... Conduction
band
Eo ..J,. E
c
E
F
N
(I) 0 < V < V
p
P
F.B. E
g
Eo Tunneling
E
F
Ivalence
/,
(3) V
p
< V< V
o
V
o
< V<oo
(b) Tunnel diode with applied forward bias
E
F
is the Fermi level representing the energy state with 50%
probability of being filled if no forbidden band exists
V
o
is the potential barrier of the junction
E
g
is the energy required to break a covalent bond, which is
0.72 eV for germanium and 1.1 0 eV for silicon
E
c
is the lowest energy in the conduction band
Eo is the maximum energy in the valence band
V is the applied forward bias
F.B. stands for the forbidden band
B.H. represents the barrier height
Figure 531 Energyband diagrams of tunnel diode.
200 Microwave Transistors and Tunnel Diodes Chap. 5
Under opencircuit conditions or at zerobias equilibrium, the upper levels of
electron energy of both the p type and n type are lined up at the same Fermi level as
shown in Fig. 53I(a). Since there are no filled states on one side of the junction
that are at the same energy level as empty allowed states on the other side, there is
no flow of charge in either direction across the junction and the current is zero, as
shown at point (a) of the voltampere characteristic curve of a tunnel diode in Fig.
532.
1
o (a) V
p
1
o
V
u
Forward voltage
Forward voltage
v
(a) Tunnelling current (solid
curve) and injection
current (dashed curve)
(b) 1 V characteristic
of tunnel diode
Figure 532 Amperevoltage characteristics of tunnel diode.
In ordinary diodes the Fermi level exists in the forbidden band. Since the tun
nel diode is heavily doped, the Fermi level exists in the valence band in p type and
in the conduction band in ntype semiconductors. When the tunnel diode is forward
biased by a voltage between zero and the value that would produce peak tunneling
current Ip(O < V < Vp), the energy diagram is shown in part (1) of Fig. 53I(b).
Accordingly, the potential barrier is decreased by the magnitude of the applied
forwardbias voltage. A difference in Fermi levels in both sides is created. Since
there are filled states in the conduction band of the n type at the same energy level as
allowed empty states in the valence band of the p type, the electrons tunnel through
the barrier from the n type to the p type, giving rise to a forward tunneling current
Sec. 5.3 Microwave Tunnel Diodes 201
from the p type to the n type as shown in sector (1) of Fig. 532(a). As the forward
bias is increased to Vp, the picture of the energy band is as shown in part (2) of Fig.
531(b). A maximum number of electrons can tunnel through the barrier from the
filled states in the n type to the empty states in the p type, giving rise to the peak
current I
p
in Fig. 532(a). If the bias voltage is further increased, the condition
shown in part (3) of Fig. 531(b) is reached. The tunneling current decreases as
shown in sector (3) of Fig. 532(a). Finally, at a very large bias voltage, the band
structure of part (4) of Fig. 531(b) is obtained. Since there are now no allowed
empty states in the p type at the same energy level as filled states in the n type, no
electrons can tunnel through the barrier and the tunneling current drops to zero as
shown at point (4) of Fig. 532(a).
When the forwardbias voltage V is increased above the valley voltage V
v
, the
ordinary injection current I at the pn junction starts to flow. This injection current
is increased exponentially with the forward voltage as indicated by the dashed curve
of Fig. 532(a). The total current, given by the sum of the tunneling current and
the injection current, results in the voltampere characteristic of the tunnel diode as
shown in Fig. 532(b). It can be seen from the figure that the total current reaches
a minimum value Iv (or valley current) somewhere in the region where the tunnel
diode characteristic meets the ordinary pn diode characteristic. The ratio of peak
current to valley current (Ip/I
v
) can theoretically reach 50 to 100. In practice, how
ever, this ratio is about 15.
5·3·2 Microwave Characteristics
The tunnel diode is useful in microwave oscillators and amplifiers because the diode
exhibits a negativeresistance characteristic in the region between peak current I
p
and valley current Iv. The IV characteristic of a tunnel diode with the load line is
shown in Fig. 533.
Here the abc load line intersects the characteristic curve in three points. Points
a and c are stable points, and point b is unstable. If the voltage and current vary
about b, the final values of I and V would be given by point a or c, but not by b.
Since the tunnel diode has two stable states for this load line, the circuit is called
bistable. and it can be utilized as a binary device in switching circuits. However, mi
I
Load line
Forward voltage
Figure 53·3 IV characteristic of tun
nel diode with load line.
202 Microwave Transistors and Tunnel Diodes Chap. 5
(531)
crowave oscillation or amplification generated by the tunnel diode is our major con
cern in this section. The second load line intersects the IV curve at point b only.
This point is stable and shows a dynamic negative conductance that enables the tun
nel diode to function as a microwave amplifier or oscillator. The circuit with a load
line crossing point b in the negativeresistance region is called astable. Another load
line crossing point a in the positiveresistance region indicates a monostable circuit.
The negative conductance in Fig. 533 is given by
ai I g
av Vb R
n
where R
n
is the magnitude of negative resistance.
For a small variation of the forward voltage about \1, , the negative resistance is
constant and the diode circuit behavior is stable. A smallsignal equivalent circuit for
the tunnel diode operated in the negativeresistance region is shown in Fig. 534.
Here Rs and L
s
denote the inductance and resistance of the packaging circuit of a
tunnel diode. The junction capacitance C of the diode is usually measured at the val
ley point; R
n
is the negative resistance of the diode. Typical values of these parame
ters for a tunnel diode having a peak current I
p
of 10 rnA are
R
n
= 30 n R
s
= In L
s
= 5 nH C = 20pF
I
I
I
I
C R. I
I
I
I
I
I I Figure 534 Equivalent circuit of tun
L ...J nel diode.
The input impedance Zin of the equivalent circuit shown in Fig. 534 is given
by
Z = R + . L + Rn[J/(wC)]
m s JW s R
n
 j/(wC)
Z
in = R
s
 I + (wRnCf + J wL
s

]
I + (WR
n
C)2
(532)
(533)
For the resistive cutoff frequency, the real part of the input impedance Zin must be
zero. Consequently, from Eq. (532) the resistive cutoff frequency is given by
1m:
fc = 27TR
n
C \lIt  I
For the selfresonance frequency, the imaginary part of the input impedance must be
zero. Thus,
(534)
Sec. 5.3 Microwave Tunnel Diodes 203
The tunnel diode can be connected either in parallel or in series with a resistive
load as an amplifier; its equivalent circuits are shown in Fig. 535.
+
r,
Tunnel
diode
L J
+
,,
Tunnel i
~   o    _  ; . .     < _ ~ 1
I
1
1
C
R I
nl
1
I
1
I
diode :
L J
(a) Parallel loading (b) Series loading
Figure 535 Equivalent circuits of tunnel diodes.
Parallel loading. It can be seen from Fig. 535(a) that the output power in
the load resistance is given by
(535)
(536)
One part of this output power is generated by the small input power through the tun
nel diode amplifier with a gain of A, and this part can be written
y2
Pin = AR
f
Another part of the output power is generated by the negative resistance, and it is ex
pressed as
(537)
Therefore
(538)
(539)
y2 y2 y2
+=
AR
f
R
n
R
f
and the gain equation of a tunnel diode amplifier is given by
A = R
n
R
n
 R
f
When the negative resistance R
n
of the tunnel diode approaches the load resistance
R
f
, the gain A approaches infinity and the system goes into oscillation.
Series loading. In the series circuit shown in Fig. 535(b) the power gain
A is given by
204
Microwave Transistors and Tunnel Diodes Chap. 5
A = R
e
R
e
 R
n
(5310)
The device remains stable in the negativeresistance region without switching if
R
e
< R
n
•
A tunnel diode can be connected to a microwave circulator to make a negative
resistance amplifier as shown in Fig. 536. A microwave circulator is a multiport
junction in which the power may flow only from port 1 to port 2, port 2 to port 3,
and so on in the direction shown. Although the number of ports is not restricted,
microwave circulators with four ports are most commonly used. If the circulator is
perfect and has a positive real characteristic impedance R
o
, an amplifier with infinite
gain can be built by selecting a negativeresistance tunnel diode whose input
impedance has a real part equal to  R
o
and an imaginary part equal to zero. The
reflection coefficient from Fig. 536 is infinite. In general, the reflection coefficient
is given by
r = R
n
 R
o
R
n
+ R
o
(5311)
rTunnel'
i diode i
1 1
1 I
1 I
<>1
1
' I
C R
n
I
I
I
I
I
: i Figure 536 Tunnel diode connected
L l to circulator.
REFERENCES
[1] SOBOL, H., and F. STERZER, Solidstate microwave power sources. IEEE Spectrum, 4, 32,
April 1972.
[2] NAVON, D. H., Semiconductor Microdevices and Materials. Holt, Rinehart and Winston,
New York, 1986.
[3] SZE, S. M., Semiconductor Devices: Physics and Technology, Fig. 6 in Chapter 4. John
Wiley & Sons, New York, 1985.
[4] EARLY, J. M., Maximum rapidly switchable power density in junction triodes. IRE Trans.
on Electron Devices, ED6, 322335 (1959).
[5] JOHNSON, E. 0., Physical limitations on frequency and power parameters of transistors.
RCA Rev., 26, No.6, 163177, June 1965.
[6] DELoACH, B. c., JR., Recent advances in solid state microwave generators. Advances in
Microwaves, Vol. 2. Academic Press, New York, 1967.
[7] ANDERSON, R. L., Experiments on GeGaAs heterojunction. Solid State Electronics, 5, p.
341. Pergamon Press, London, 1962.
Problems
SUGGESTED READINGS
205
IEEE Proceedings. 70, No. I, January 1982. Special issue on very fast solidstate technol
ogy.
LIAO, S. Y., Semiconductor Electronic Devices. PrenticeHall, Inc., Englewood Cliffs, N.J.,
1990.
NAVON, D. H., Semiconductor Microdevices and Materials. Holt, KInehart ana wInston, l ....ew
York, 1986.
SZE, S. M., Semiconductor Devices: Physics and Technology. John Wiley & Sons, New York,
1985.
PROBLEMS
Microwave Bipolar Transistors
51. A GaAs npn transistor at 300° K has the following parameters:
Base width
Diffusion length in emitter
Diffusion length in collector
Base resistivity
Emitter resistivity
Collector resistivity
Emitter junction voltage
Collector junction voltage
Crosssection area
W = 2 X 10
5
cm
L
E
= 2 X 10
4
cm
L
c
= 4 X 10
4
cm
PB = 200cm
PE = IOcm
pc = 10 Ocm
V
E
= 0.4 V
V
c
= 0.5 V
A = 0.01 cm
2
Find: a. the impurity densities in the emitter, base and collector
b. the mobilities in the emitter, base, and collector
c. the diffusion lengths in the emitter, base, and collector
d. the equilibrium densities in the emitter, base, and collector
e. the coupling coefficients
f. the emitter and collector currents
52. Derive Eq. (5130) from Eq. (5127).
53. Derive Eq. (5131) from Eq. (5130).
54. Verify Eq. (5134).
55. Derive Eqs. (5139), (5140), and (5141).
56. A certain silicon bipolar transistor has a maximum electric field intensity Em of
3 x 10
5
volts/em and its carrier has a saturated drift velocity V
s
of 4 x 10
6
em/sec.
The emittercollector length L is 4 microns.
a. Calculate the maximum allowable applied voltage.
b. Compute the transit time for a charge to transverse the emittercollector length L.
c. Determine the maximum possible transit frequency.
206 Microwave Transistors and Tunnel Diodes Chap. 5
57. A bipolar transistor has voltagefrequency and currentfrequency limitations as shown
in Eqs. (5158) and (5159). Derive the powerfrequency limitation as shown in Eq.
(5160) .
58. A bipolar transistor has a voltagecurrentpower limitation. Derive the power gain
frequency relationship as shown in Eq. (5161).
Heterojunction Bipolar Transistors
59. An nGep GaAsnGaAs heterojunction transistor at 300° K has the following
parameters:
Donor density in the nGe region:
Acceptor density in p GaAs region:
Hole lifetime:
Bias voltage at emitter junction:
Cross section:
N
d
= 2 X 10
19
cm
3
N
a
= 3 X 10
17
cm
3
T
p
= 4 X 10
6
sec
V
E
= 1.50 V
A = 4 X 10
2
cm
2
Compute: a. The builtin voltage in the pGaAs side
b. The hole mobility (read the value from Fig. 242)
c. The hole diffusion constant
d. The minority hole density in the nGe region
e. The minority electron density in the p GaAs region
f. The hole diffusion length
g. The emitterjunction current
510. An nGepGaAsnGaAs heterojunction transistor at 300° K has the following
parameters:
Donor density in the nGe region:
Acceptor density in the p GaAs region:
Hole lifetime:
Bias voltage across np junction:
Cross section:
N
d
= 5 X 10
18
cm
3
N
a
= 6 X 10
16
em
3
T
p
= 4 X 10
6
sec
V
E
= 0.80 V
A = 2 X 10
2
cm
2
Calculate: a. The builtin voltage in the pGaAs side
b. The hole mobility (read from Fig. A2 in Appendix A)
c. The hole diffusion constant
d. The minority hole density in the nGe region
e. The minority electron density in the p GaAs region
f. The hole diffusion length
g. The emitterjunction current
Describe the electronic applications of an HBT.
Tunnel Diodes
511. A negativeresistance device is connected through a lkfl resistor in series and a
O.OlJLF capacitor in parallel to a combination of a supply voltage Vof 10 V and a sig
Problems 207
20 8 10
2 c . : . ; ~ : : ! : : : : : : : : : _
o
10
8
20
rnA 25
u
(a)
Ikil

i
r
0.01 ~ F
+
IOV
(b)
Figure PSll
nal source V, as shown in Fig. P511 (a). Its IV characteristic curve is shown in Fig.
P511(b).
a. Find the negative resistance and forward resistances of the device.
b. Draw the load line on the IV curve.
c. Determine the quiescent operating point of the circuit by the values of voltage and
current.
d. Determine the new operating point by the values of voltage and current when a sig
nal voltage of 14 V is applied to the circuit.
e. Draw the new load line on the IV curve.
t Find the time constant of the circuit.
g. Compute v, i, in and i
r
as a function of time after the triggering signal is applied
and before the transition takes place.
h. Find the transition time T in microseconds.
i. Calculate v, i, in and i
r
immediately after transition.
512. A microwave tunnel diode has a negative resistance R. and the resonant circuit has a
circuit resistance R
e
. Derive an equation for the gain of a microwave tunneldiode am
plifier.
513. A certain microwave tunnel diode has a negative resistance of 69 + j9.7 n. Deter
mine the resonantcircuit impedance so that the microwave tunneldiode amplifier will
produce a power gain of 15 dB.
Chapter 6
Microwave FieldEffect
Transistors
60 INTRODUCTION
After Shockley and his coworkers invented the transistor in 1948, he proposed in
1952 a new type of fieldeffect transistor (FET) in which the conductivity of a layer
of a semiconductor is modulated by a transverse electric field [I]. In a conventional
transistor both the majority and the minority carriers are involved; hence this type of
transistor is customarily referred to as a bipolar transistor. In a fieldeffect transistor
the current flow is carried by majority carriers only; this type is referred to as a
unipolar transistor. In addition, the fieldeffect transistors are controlled by a
voltage at the third terminal rather than by a current as with bipolar transistors. Our
purpose here is to describe the physical structures, principles of operation, mi
crowave characteristics, and powerfrequency limitations of unipolar fieldeffect
transistors. Since the microwave fieldeffect transistor has the capability of amplify
ing small signals up to the frequency range of X band with lownoise figures, it has
lately replaced the parametric amplifier in airborne radar systems because the latter is
complicated in fabrication and expensive in production.
The unipolar fieldeffect transistor has several advantages over the bipolar
junction transistor:
1. It may have voltage gain in addition to current gain.
2. Its efficiency is higher than that of a bipolar transistor.
3. Its noise figure is low.
4. Its operating frequency is up to X band.
5. Its input resistance is very high, up to several megohms.
208
Sec. 6.1 Junction FieldEffect Transistors (JFETs) 209
Among the unipolar fieldeffect transistors are the junction fieldeffect transis
tors, metalsemiconductor fieldeffect transistors, high electronmobility transistors,
and the metaloxidesemiconductor fieldeffect transistors. All these devices are ana
lyzed in this chapter.
6·1 JUNCTION FIELD·EFFECT TRANSISTORS (JFETs)
Unipolar fieldeffect transistors may be in the form of either a pn junction gate or a
Schottkybarrier gate. The former is called a junction fieldeffect transistor (JFET) ,
and the latter is referred to as a MESFET or metalsemiconductor fieldeffect transis
tor. The JFET was originally proposed by Shockley [I]. Figure 611 shows the
schematic diagram and circuit symbol for an nchannel JFET.
6·1·1 Physical Structure
The ntype material is sandwiched between two highly doped layers of p type mate
rial that is designated P+. This type of device is called an nchannel JFET. If
the middle part is a p type semiconductor, the device is called a pchannel JFET.
The two p type regions in the nchannel JFET shown in Fig. 611 are referred
to as the gates. Each end of the n channel is joined by a metallic contact. In accor
dance with the directions of the biasing voltages shown in Fig. 611, the lefthand
contact which supplies the source of the flowing electrons is referred to as the
source, whereas the righthand contact which drains the electrons out of the material
is called the drain. The circuit symbol for an nchannel JFET is also shown in Fig.
611. The direction of the drain current I
d
is flowing from the drain to the device.
Ptype gate
Source
Figure 611 Schematic diagram and circuit symbol for an nchannel JFET.
210 Microwave FieldEffect Transistors Chap. 6
For a p channel JFEf, the polarities of the two biasing voltages V
g
and V
d
are inter
changed, the head of the arrow points away from the device, and the drain current I
d
flows away from the device. Since electrons have higher mobility than holes, the
nchannel JFEf provides higher conductivity and higher speed and is preferred in
most applications to the p channel JFEf.
6·1·2 Principles 01 Operation
Under normal operating conditions, when the gate voltage V
g
is zero, the drain cur
rent I
d
is also zero. The channel between the gate junctions is entirely open. When a
small drain voltage V
d
is applied between the drain and source, the ntype semicon
ductor bar acts as a simple resistor, and the current I
d
increases linearly with V
d
• If a
reverse gate voltage V
g
is applied across the pn gate junctions, the majority of free
electrons are depleted from the channel, and the spacecharge regions are extended
into the channel. As the drain voltage V
d
is further increased, the spacecharge re
gions expand and join together, so that all free electron carriers are completely de
pleted in the joined region. This condition is called pinch off. When the channel is
pinched off, the drain current I
d
remains almost constant, but the drain voltage V
d
is
continuously increased.
Pinchoff voltage Vp. The pinchoff voltage is the gate reverse voltage that
removes all the free charge from the channel. The Poisson's equation for the voltage
in the n channel, in terms of the volume charge density is given by
(611)
where p = volume charge density in coulombs per cubic meter
q = charge in coulombs
N
d
= electron concentration in electrons per cubic meter
E
s
= permittivity of the material in farads per meter
E
s
= ErE
o
, E
r
is the relative dielectric constant
Eo = 8.854 X 10
12
F/m is the permittivity of free space
Integration of Eq. (611) once and application of the boundary condition of the
electric field E =  ~ ~ = 0 at y = a yield
dV qN
d
 = (y  a)
dy E
s
volts per meter (612)
Integration of Eq. (612) once and application of the boundary condition V = 0 at
y = 0 result in
qN
d
V = __(y2  2ay)
2E
s
volts (613)
Sec. 6.1 Junction FieldEffect Transistors (JFETs) 211
Then the pinchoff voltage V
p
at y = a is expressed as
V, = qN
d
a
2
volts
p 2E's
(614)
where a is the height of the channel in meters.
Equation (614) indicates that the pinchoff voltage is a function of the doping
concentration N
d
and the channel height a. Doping may be increased to the limit set
by the gate breakdown voltage, and the pinchoff voltage may be made large enough
so that driftsaturation effects just become dominant.
From Fig. 611, the pinchoff voltage under saturation condition can be ex
pressed as
Vp = Vd + IV ~ I + 1/10
where IV ~ I = absolute value of the gate voltage
1/10 = builtin or barrier voltage at the junction
The saturation drain voltage is then given by
qN
d
a
2
Vdsat = 2  IV ~ I  1/10
E's
(615)
(616)
The JFET has a conducting channel between the source and the drain elec
trodes when the gate bias voltage is zero. This is the ON state, and the transistor is
called a normally ON lFET. In order to reach the OFF state, a gate voltage must be
applied to deplete all carriers in the channel. As a result, this device is referred to as
the depletionmode lFET or D1FET.
Example 611: PinchOtT Voltage of a Silicon JFET
A certain Si JFET has the following parameters:
Channel height:
Electron concentration:
Relative dielectric constant:
a = 0.1 p,m
N
d
= 8 X 1O
t7
cm
3
E
r
= 11.80
Calculate the pinchoff voltage.
Solution From Eq. (616), the pinchoff voltage is
qN
d
a
2
1.6 X 10
19
x 8 X 10
23
X (0.1 X 10
6
)2
V
p
= zz = 2 X 8.854 X 10
12
x 11.8
= 6.66 volts
613 CurrentVoltage (IV} Characteristics
The drain current of an nchannel JFET is dependent on the drain and gate voltages
and the channel resistance. The nchannel resistance can be expressed as
L
(617)
212 Microwave FieldEffect Transistors Chap. 6
where ILn = electron mobility
Z = distance in z direction
L = length in x direction
W = depletionlayer width
a = width between two pn junctions
The drain voltage across an elemental section dx of the channel is given by
Iddx
dV(x) = IddR = 2qlLn
N
d
Z[a  W(x)]
From Eq. (616), the depletionlayer width can be written as
W(x) = [
2lO
s[V(x) + IVK I + t/l
o
]JI/2
qNd
Then
Wdw =
qN
d
The drain current I
d
is expressed by
(618)
(619)
(6110)
(611 1)
dV
I d = 2qlLnNdZ[a  W(x)] dx
Substituting Eq. (6110) into Eq. (6111) and integrating from x = 0 to x = L
give the drain current as
2 2 2 Z fW
2
I
d
= q IL
n
N
d
(a  W)Wdw
LlO
s
"'1
=  Wn   WD] (6112)
Boundary conditions. The channeltogate voltage can be written from
Eq. (614) as
qN
d
W
2
qNda 2 W2 W2
V,'K = 2 = 2 2 = Vp 
2
= V(x) + IvKI + t/lo (6113)
lOs lOsa a
The depletionlayer width is
W = a(V(x) + + t/l
o
)I/2
Then
(6114)
at x = 0 and V (x) = 0 (6115)
and
at x = L and V (x) = V
d
(6116)
Sec. 6.1 Junction FieldEffect Transistors (JFETs) 213
Substituting Eqs. (6115) and (6116) into Eq. (6112) yields the drain current
I = [VJ _ + IvRI + 0/0)3/2 + (IVRI + 0/0)3/2] (6117)
J I" V. 3 V. 3 V.
" " "
J.L q2 N
2
Za.1
where II' = n J is the pinchoff current.
LE.,
Figure 612 shows the normalized ideal currentvoltage characteristics for a
pinchoff voltage of 3.2 volts [I].
Pinch off
1.0
t
I _ Saturation region
I
I
J V, = a
0.5 V
Linear
region
J
1.5
0.2
2.0
2.5
a 2 4 6 8 10
0.8
1.0
....,c,
0.6
.'" c;
E
C3
z 0.4
Drain voltage V
J
in volts
Figure 612 Normalized ideal IV characteristics of a typical JFEf.
Linear region. In the linear region at V
J
(I V
R
I + 0/0), the drain current
can be expressed from Eq. (6112) as
I
J
=  (IVRl
v
: 0/°t
2
] (6118)
The channel conductance (or the drain conductance) is given by
g _ aid I  II' [I _(I V
R
I+ 0/0)1/2]
J  aV
d
 VI' VI'
The mutual conductance (or transconductance) is expressed as
g = aid I = IpV
d
[1 _( VI' )1/2]
m aV
R
Vrconstant 1 VgI + 0/0
(6119)
(6120)
214 Microwave FieldEffect Transistors Chap. 6
Saturation region. At the pinchoff voltage, the drain current becomes sat
urated. By setting Vp = V
d
+ I V
R
I + 1/10' the saturation drain current is given by
I . = I [! _(I V
R
I+ 1/1
0
) + ~ (I V
R
I+ 1/10)3/2]
d sat p 3 V. 3 V.
p p
and the corresponding saturation drain voltage as
The mutual conductance in the saturation region is then expressed as
(6121)
(6122)
(6123)
It should be noted that the gm in the saturation region is identical to the one in the
linear region.
For a small signal, the drain or output resistance is defined as
(6124)
Then the amplification factor for a JFET may be defined as
The cutoff frequency is given by
f = ~ = IpjV
p
_ 2j.LnqNda
2
c 2TT'C
R
2TT'ZL€sj(2a)  TT'€sU
h C
LZ€s' h . b d
were R = 2;; IS t e capacItance etween gate an source
(6125)
(6126)
Pinchoff region. When an electric field appears along the x axis between
the drain and the source, the drain end of the gate is more reversebiased than the
source end. Hence the boundaries of the depletion region are not parallel to the cen
ter of the channel, but converged as shown in Fig. 612. As the drain voltage V
d
and drain current I
d
are further increased, the channel is finally pinched off.
Breakdown voltage. As the drain voltage V
d
increases for a constant gate
voltage V
R
, the biasvoltage causes avalanche breakdown across the gate junction,
and the drain current I
d
increases sharply. The breakdown voltage is shown in Fig.
613 by the relationship
Sec. 6.1 Junction FieldEffect Transistors (JFETs) 215
1.0
0.8
..,"
c
t 0.6
3
'§ 0.4
c::
0.2
I I I I
t
t
v
t
= 0
0.5 V
j ~
1.0
1.5
2.0
I.
2.5
o 4
(,
8 10 12
Drain voltage V
d
in volts
Figure 613 Breakdown voltage for a typical JFEf.
Example 612: Current of a JFET
A silicon JFET at 300
0
K has the following parameters:
Electron density:
Hole density:
Relative dielectric constant:
Channel height:
Channel length:
Channel width:
Electron mobility:
Drain voltage:
Gate voltage:
Compute:
N
d
= I X 10" cm
3
No = 1 X 10
19
cm
3
€r = 11.8
a = 0.2 X 10
4
cm
L = 8 X 10
4
cm
Z = 50 X 10
4
cm
ILn = 800 cm
2
/V' s
V
d
= IOV
V
g
=  1.5 V
a. The pinchoff voltage in volts
b. The pinchoff current in rnA
c. The builtin voltage in V
d. The drain current in rnA
e. The saturation drain current at V
g
= 0
f. The cutoff frequency
Solution
a. The pinchoff voltage is
1.6 X 10
19
X 1 X 10
17
X (0.2 X 10
4
)2
V
p
= 2 X 8.854 X 10
14
X 11.8 = 3.06 V
216
Microwave FieldEffect Transistors Chap. 6
b. The pinchoff current is
800 x (1.6 x 10
19
)2(1 x 10
17
)2(50 x 10
4
)(0.2 x 10
4
)3
l='':':c:',:;'c:'
p 8 X 10
4
x 8.854 X 10
14
x 11.8
= 9.80 rnA
c. The builtin voltage is
[
I X 10
17
x 1 x 10191
1J;" = 26 x 1O
3
1n (1.5 x 10
1
°)2 = 0.936 V
d. The drain current is computed from Eq. (6117) as
= x  3 [ ~ _ (10 + 1.5 + 0.936)3/2 + ~ (1.5 + 0.936)3/2]
ld 9.8 10 3.06 3 3.06 3 3.06
= 6.80 rnA
e. The saturation drain current is computed from Eq. (61 21) to be
= x 3 [ ~ _ (1.5 + 0.936) + ~ (1.5 + 0.936)3/21
ld,at 6.8 10 3 3.06 3 3.06
= 0.088 rnA
f. The cutoff frequency is computed from Eq. (6126) as
2 x 800 x 1.6 X 1W
I9
x 1 X 10
17
x (0.2 x 10
4
)2
j; = 3.1416 x 8.854 x 10
14
x 11.8 x (8 x 10
4
)2
= 4.8 GHz
The operating frequency must be less than 4.8 GHz.
6·2 METAL·SEMICONDUCTOR FIELD· EFFECT
TRANSISTORS (MESFETs}
In 1938, Schottky suggested that the potential barrier could arise from stable space
charges in the semiconductor alone without the presence of a chemical layer [2]. The
model derived from his theory is known as the Schottky barrier.
If the fieldeffect transistor is constructed with a metalsemiconductor
Schottkybarrier diode, the device is called a metalsemiconductor fieldeffect tran
sistor (MESFET). The material may be either silicon or gallium arsenide (GaAs),
and the channel type may be either n channel or p channel.
Since GaAs MEFSETs have the capability of amplifying small signals up to the
frequence range of X band with lownoise figure, they have lately replaced the para
metric amplifiers in airborne radar systems because the latters are complicated to
fabricate and expensive to produce.
The GaAs MESFET has higher electron mobility, higher electric field, and
higher electron saturation drift velocity than silicon devices, so its output power is
also greater. Another special feature is its lower noise figure, accounted for by its
Sec. 6.2 MetalSemiconductor FieldEffect Transistors (MESFETs)
217
higher electron mobility. Therefore the GaAs MESFETs are very commonly used in
microwave integrated circuits for highpower, lownoise, and broadband amplifier
applications.
6·2·1 Physical Structures
The MESFET was developed by many scientists and engineers, such as Mead [3]
and Hooper [4], and it is sometimes also called the Schottkybarrier fieldeffect
transistor.
The unipolar transistor such as a GaAs MESFET can be developed by using ei
ther the epitaxial process or the ion implantation method and those methods are dis
cussed in Chapter 12. Figure 621 shows schematically a simple MESFET in GaAs.
Source Gate Drain
Contact ••L ...
metal
layer
Figure 62} Schematic diagram of a
GaAs MESFET.
In GaAs MESFETs the substrate is doped with chromium (Cr), which has an
energy level near the center of the GaAs bandgap. As Cr is the dominant impurity,
the Fermi level is pinned near the center of the bandgap. Thus, a very high
resistivity substrate (near 10
8
ohmem) generally results, and it is commonly called
the semiinsulator GaAs substrate. On this nonconducting substrate a thin layer of
lightly doped ntype GaAs is grown epitaxially to form the channel region of the
fieldeffect transistor. In many cases a high resistivity GaAs epitaxial layer, called
the buffer layer, is grown between the ntype GaAs layer and the substrate. The
photolithographic process may be used to define the patterns in the metal layers such
as AuGe for source and drain ohmic contacts and in the Al layer for the Schottky
barriergate contact. The reason for using GaAs instead of Si is that GaAs has higher
electron mobility and can operate at higher temperature and higher power.
The GaAs MESFET can also be grown by using ion implantation. A thin n
type layer can be formed at the surface of the substrate by implanting Si or a donor
impurity Se from column VI of the element periodic table. However, the ion im
plantation process requires an anneal to remove the radiation damage. In either the
fully implanted device or the epitaxial device, the source and drain contacts may be
improved by further n+ implantation in these regions.
218 Microwave FieldEffect Transistors Chap. 6
After the fabrication processes are completed, the individual transistor is sepa
rated from the wafer, and this discrete transistor is called a chip device. The chip
device is then alloyed to a header to provide a contact to the collector region, and
Au or Al wires are bonded to the metallized regions to serve as leads to the emitter
and base. This bonded chip device is then named a package transistor. Figure 6 22
shows both the package and chip GaAs MESFET devices.
Terminal.1
gate
Terminal :2
source
c75
DXL c501A
GaAs FET Chip Dimensions
I"
r
3110
t
'+t+++++I
040 Typ 1. Terminal4
..l source
E ~ 3 + ~ = = : J
tT
c50 min
typo
J _
~ fOcOTyp
~ +\ r+ 0.070
0.050 TypIT ~  cp... _
1
004
Typ
DXL c501 AP70
Standard Package
Hermetic microstrip line packages
Terminal I
drain
All diIlH.'llsions arc in iIlL'IlL's All dimensions arc in microns
lu) Package deVice I b) Chi p device
Figure 622 Dimensions of package and chip GaAs MESFEfs.
The MESFET device is of an interdigitated structure, fabricated by using an n
type GaAs epitaxial film about 0.15 to 0.35JLm thick on a semiinsulating sub
strate about 100 JL. The nchannellayer is doped with either sulphur or tin in a dop
ing concentration N between 8 x lOt6/cm3 and 2 x 1Ot7/cm3. The electron mobility
in the layer is in the range of 3000 to 4500 cm
2
/V·s. The Schottky barriergate is
evaporated aluminum. The source and drain contacts are AuGe, AuTe, or
AuTeGe alloys. A contact metallization pattern of gold is used to bring the
source, drain, and gate contacts out to bonding pads over the semiinsulating sub
strate. A buffer layer of about 3 JLm with a doping concentration of lOt5 to lOt6 cm
3
is often fabricated between the active ntype epitaxial layer and the semiinsulating
substrate.
6·2·2 Principles of Operation
In Fig. 623 and in Fig. 611 for JFET, a voltage is applied in the direction to
reversebias the pn junction between the source and the gate, while the source and
the drain electrodes are forwardbiased. Under this bias condition, the majority car
riers (electrons) flow in the ntype epitaxial layer from the source electrode, through
the channel beneath the gate, to the drain electrode. The current in the channel
Sec. 6.2 MetalSemiconductor FieldEffect Transistors (MESFETs) 219
Source Gate Drain
D
G
Vgs
+00'
s
.l' / I epitaxial
Contact GaAs
metal t>,'___+'
Figure 623 Schematic diagram and circuit symbol of a GaAs MESFEf.
(621) mhos
causes a voltage drop along its length so that the Schottky barriergate electrode be
comes progressively more reversebiased toward the drain electrode. As a result, a
chargedepletion region is set up in the channel and gradually pinches off the channel
against the semiinsulating substrate toward the drain end. As the reverse bias be
tween the source and the gate increases, so does the height of the chargedepletion
region. The decrease of the channel height in the nonpinchedoff region will increase
the channel resistance. Consequently, the drain current I
d
will be modulated by the
gate voltage V
R
• This phenomenon is analogous to the characteristics of the collector
current Ie versus the collector voltage V
e
with the base current h as a parameter in a
bipolar transistor. In other words, a family of curves of the drain current I
d
versus
the voltage V
ds
between the source and drain with the gate voltage V
R
as a parameter
will be generated in an unipolar GaAs MESFET, as shown in Figure 624.
The transconductance of a fieldeffect transistor (FEr) is expressed as
dId I
g =
m dV
R
Vd=conSlant
For a fixed draintosource voltage V
d
" the drain current I
d
is a function of the
reversebiasing gate voltage V
R
• Because the drain current I
d
is controlled by the
field effect of the gate voltage V
R
, this device is referred to as the fieldeffect transis
tor. When the drain current I
d
is continuously increasing, the ohmic voltage drop be
tween the source and the channel reversebiases the pn junction further. As a re
sult, the channel is eventually pinched off. When the channel is pinched off, the
drain current I
d
will remain almost constant even though the draintosource voltage
V
d
is continuously increased.
(622)
Pinchoff voltage Vpo The pinchoff voltage is the gate reverse voltage that
removes all the free charge from the channel. Poisson's equation for the voltage in
the n channel, in terms of the volume charge density is given by
d
2
V _f!. _ qNd _ qNd
d
y
2  E
s
4 3 o
220
Microwave FieldEffect Transistors
Chap. 6
35
30
~ s = 0.0_
~ 5
<
0.5
.
~ o
  ~
2
I
.J
15
1.0
<:
a
10
1.5
5
Drain voltage V
ds
in volts
Figure 624 Currentvoltage characteristics of a typical nchannel GaAs
MESFET.
where p = volume charge density in coulombs per cubic meter
q = charge in coulombs
N
d
= electron concentration in electrons per cubic meter
E
s
= permittivity of the material in farads per meter
E
s
= ErE
o
, E
r
is the relative dielectric constant
Eo = 8.854 X 10
12
F/m is the permittivity of free space
Integration of Eq. (622) twice and application of the boundary condition yield the
pinchoff voltage at y = a as
volts (623)
where a is the height of the channel in meters.
Equation (623) indicates that the pinchoff voltage is a function of the doping
concentration N
d
and the channel height a. Doping may be increased to the limit set
by the gate breakdown voltage, and the pinchoff voltage may be made large enough
so that drift saturation effects just become dominant.
Sec. 6.2 MetalSemiconductor FieldEffect Transistors (MESFETs)
221
Example 621: PinchOff Voltage of a MESFET
A certain GaAs MESFEf has the following parameters:
Channel height:
Electron concentration:
Relative dielectric constant:
a = O.lltm
N
d
= 8 X 10
17
c m ~ 3
E
r
= 13.10
Calculate the pinchoff voltage.
Solution From Eq. (623) the pinchoff voltage is
qN
d
a
2
1.6 X 1 O ~ 1 9 x 8 X 10
23
x (0.1 x 10
6
)2
V. =  = :::
p 2E., 2 x 8.854 X 10
12
x 13.10
= 6.00 volts
6·2·3 Small.Signal Equivalent Circuit
For microwave frequencies, the metalsemiconductor fieldeffect transistor
(MESFET) has a very short channel length, and its velocity saturation occurs in the
channel before reaching the pinched path. The electronic characteristics of a
MESFET depend not only on the intrinsic parameters, such as gm, G
d
, R;, C
gS
' and
C
gd
, but also on the extrinsic parameters R
g
, R
s
, Cds, Rpand Cpo Figure 625 shows
the cross section of a MESFET and its equivalent circuit.
The microwave properties of metalsemiconductor fieldeffect transistors were
investigated and analyzed by many scientists and engineers. The noise behavior of
these transistors at microwave frequencies has been investigated and measured by
van der Ziel and others [5].
1. Intrinsic elements:
gm = transconductance of the MESFET
G
d
= drain conductance
Rj = input resistance
C
gS
= gatesource capacitance
C
gd
= gatedrain (or feedback) capacitance
2. Extrinsic elements:
R
g
= gate metallization resistance
Rs = sourcegate resistance
Cds = drainsource capacitance
R
p
= gate bondingpad parasitic resistance
Gate
222
s
R,
ntype
channel
Source
Microwave FieldEffect Transistors
1 Drain
Chap. 6
Gate
G
Intrinsic I
transistor :
I
I
L _
R,
D
Drain
Source
s Source
Figure 625 Cross section and equivalent circuit of a MESFET.
C
p
= gate bondingpad parasitic capacitance
Ze = load impedance
The values of these intrinsic and extrinsic elements depend on the channel
type, material, structure, and dimensions of the Schottky barriergate FET. The
large values of the extrinsic resistances will seriously decrease the power gain and
efficiency and increase the noise figure of the MESFET. It is advantageous to in
crease the channel doping N as high as possible in order to decrease the relative
influence of the feedback capacitance C
Rd
and to increase the transconductance gm
and the de opencircuit voltage gain. However, an increase in concentration N de
creases the breakdown voltage of the gate. A doping of 10
18
per cubic centimeter
might be an upper limit.
Sec. 6.2 MetalSemiconductor FieldEffect Transistors (MESFETs) 223
6·2·4 Drain Current 'd
The drain current I
d
of a Schottky barriergate FET is expressed [6] as
3(/L2  p2)  2(/L3 _ p3)
I
d
= II' 1 (2 2) amperes
+'Y'J/L p
(624)
qNd/LaZV
p
. •
where II' = 3L IS the saturation current for the Shockley case at V
g
= 0
/L = lowfield mobility in square meters per voltsecond
q = 1.6 X 10
19
coulomb is the electron charge
N
d
= doping concentration in electrons per cubic meter
a = channel height
Z = channel depth or width
L = gate length
VI' = pinchoff voltage as defined in Eqo (623)
(
Vd + I V. 1)1/2
U = V. g is the normalized sum of the drain and gate voltages with
I' respect to the pinchoff voltage
p = (' ~ 1)'/2 is the normalized gate voltage with respect to the pinchoff
I' voltage
'Y'J = /  L ~ ~ I = ~ is the normalized drift velocity with respect to the saturation
V
s
V
s
drift velocity
V
s
= saturation drift velocity
v = /LEx E is the drift velocity in the channel
l+/Lx
V
s
Ex = absolute value of the electric field in the channel
Figure 624 shows a plot of the drain current I
d
versus the drain voltage V
ds
with the gate voltage V
gs
as a parameter for a typical nchannel GaAs MESFET. The
drain current has a maximum at u = Urn given by
u ~ + 3urn(;  p2) + 2p3  ~ = 0 (625)
where z = /LI VI' 1/(v,L) is the ratio between the smallfield velocity extrapolated
linearly to the field V
p
/ L and the saturation velocity
Substitution of Eqo (625) into Eqo (624) yields the saturation drain current as
The transconductance in the saturation region is given by
(626)
gmax(U
rn
 p)
1 + z(u;  p2)
(627)
224
Microwave FieldEffect Transistors Chap. 6
In practice, the drain current and mutual conductance of a GaAs MESFET can be
expressed by
(628)
and
(629)
The velocityfield curves of a GaAs MESFET are very complicated. Figure
626 shows these curves in the saturation region [7]. The narrowest channel cross
section is located under the drain end of the gate. The peak electric field appears
near the drain. The drift velocity rises to a peak at Xl, close to the center of the
channel, and falls to the low saturated value under the gate edge. To preserve current
continuity, heavy electron accumulation has to form in this region because the chan
nel cross section is narrowing. In addition, the electrons are moving progressively
slower with increasing x. Exactly the opposite occurs between X2 and X3. The chan
nel widens and the electrons move faster, causing a strong depletion layer. The
charges in the accumulation and depletion layers are nearly equal, and most of the
drain voltage drops in this stationary dipolelayer.
For a Si MESFET, the drain current is expressed as [7]
Id = Zqn(x)v(x)d(x)
where Z = channel depth or width
n(x) = N
d
is the density of conduction electrons
v(x) = drift velocity
d(x) = conductive layer thickness
X = coordinate in the direction of the electron drift
(6210)
The currentvoltage characteristics of a Si MESFET are shown in Fig. 627 [7]. In
Fig. 627(a), there is no metal gate electrode. At the surface of the conducting
layer, the source and drain contacts are made. When a positive voltage V
ds
is applied
to the drain, electrons will flow from source to drain. In Fig. 627(b), a metal gate
is added and shorted to the source. When a small drain voltage is applied, a deple
tion layer is created. The current Ids flowing from drain to source is indicated by Eq.
627. When the drain voltage V
d
, is increased, the depletion layer becomes wider.
The resulting decrease in conductive cross section d must be compensated by an in
crease of electron velocity v to maintain a constant current through the channel. As
the drain voltage is increased further, the electrons reach their saturation velocity V
s
Sec. 6.2 MetalSemiconductor FieldEffect Transistors (MESFETs) 225
V
D
= 3 V
 +
IV
4
Electron drift
velocity
Elect ric field
o :2
v
D
(V)
X
 E
p
X
2
X
3
X
I I
1 I
I I
I I
I I I I
: Vp
1 I I I
I I l v
I I I S
: I I I
1 I
I 1
I I
I I
I I
I I
J _
o
10
20
2
:!'..
E
u
c
o
;:)
0
Cl 0,4
0.2 Space charge
.Cl
<
in channel
0
X
0.2
0,4
Figure 626 Channel cross section, electric field, drift velocity, and space charge
distribution in the channel of a GaAs MESFEr in the saturation region.
as shown in Fig. 627(c). When the drain voltage is increased beyond Vdsat, the de
pletion layer widens toward the drain as indicated in Fig. 627(d). When a negative
voltage is applied to the gate as shown in Fig. 627(e), the gatetochannel junction
is reversebiased, and the depletion layer becomes wider. As the gate voltage V
NS
is
more negative, the channel is almost pinched off as shown in Fig. 627(f), and the
drain current Ids is nearly cut off.
226 Microwave FieldEffect Transistors Chap. 6
Ohmic
contact
+I
D
IDe
S D No gate
a } nEpi
}
Insulating VD
E !'V : substrate
c \ •
X
(a)
e:J
*ID ,
/' No gate
S G D do
E: I T V
DSAT
V
D
1 1 I
f Lj X
X
o
Xl
(c)
ID ...
S G D /' No gate
/ V
G
= 0
d '
E
r
'
1 1
E  T1 layer
c
X
(b)
(d)
(e)
V
G
= 0
V
G
< 0
V
D
(f)
Figure 627 Electricfield diagrams and currentvoltage characteristics of a Si
MESFEf.
Example 622: CurrentVoltage (IV) Characteristics of a GaAs MESFET
A typical nchannel GaAs MESFET has the following parameters:
Electron concentration:
Channel height:
Relative dielectric constant:
Channel length:
Channel width:
Electron mobility:
N
d
= 8 X 10
17
cm]
a=O.Ip,m
E
r
= 13.1
L = 14 p,m
Z = 36 p,m
p, = 0.08 m
2
IY' S
= 800 cm
2
/V . S
Sec. 6.2 MetalSemiconductor FieldEffect Transistors (MESFETs) 227
Drain voltage:
Gate voltage:
Saturation drift velocity:
V
d
= 5 volts
V
R
= 2 volts
v., = 2 X 10" m/s
a. Calculate the pinchoff voltage.
b. Compute the velocity ratio.
c. Determine the saturation current at V
8
= O.
d. Find the drain current ld.
Solution
a. From Eq. (623), the pinchoff voltage is
V
p
= 1.6 X 10
19
x 8 X 10
23
x 10
14
/(2 x 8.854 x 10
12
x 13.1}
= 5.52 volts
b. From Eq. (624), the velocity ratio is
TJ = 0.08 x 5.52/(2 x 10" x 14 x 10
6
)
= 0.158
c. From Eq. (624), the saturation current at V
R
= 0 is
qNdlWZV
p
lp = 2L
1.6 x 10
19
x 8 X 10
23
x 0.08 X 10
7
x 36 X 10
6
x 5.52
3 x 14 X 10
6
= 4.845 rnA
d. From Eq. (624), the u and p factors are
(
5 + 2)1/2
u= 5.52 =1.126
(
2 )1/2
P = 5.52 = 0.60
then the drain current is
u
2
= 1.268
p2 = 0.362
u
3
= 1.428
p3 = 0.217
ld = 4.845 X 10' x 3(1.268  0.362)  2(1.428  0.217)
. 1  0.158(1.268  0.362)
= 4.845 x 10
3
x 0.259
= 1.26 rnA
228 Microwave FieldEffect Transistors Chap. 6
6·2·5 Cutoff Frequency 'co and Maximum Oscillation
Frequency 'max
The cutoff frequency of a Schottky barriergate FET in a circuit depends on the way
in which the transistor is being made. In a wideband lumped circuit the cutoff fre
quency is expressed [7] as
Hz (6211)
where gm = transconductance
C
. dQ I
KS = gatesource capacitance = dV
xs VRd=constant
L = gate length
V
s
= saturation drift velocity
It is interesting to note that the cutoff frequency of the lumped circuit analysis as
shown in Eq. (6211) is different from the chargecarrier transittime cutoff fre
quency as shown in Eq. (5158) by a factor of onehalf.
The maximum frequency of oscillation depends on the device transconductance
and the drain resistance in a distributed circuit. It is expressed [6] as
F. =j;.O( D)1/2 =lco[f.LEp(um  p)]1/2
Jmax 2 gmI\d 2 v,Jl  Um)
Hz (6212)
where R
d
= drain resistance
gm = device transconductance
E
p
= electric field at the pinchoff region in the channel
U
m
= saturation normalization of U
v
s
, f.L, and p are defined previously
. vs (3)1/3
For p = 0 (I.e. V,\'s = 0) and TJ ~ 1, so thatj;o = 47TL and Um =";;j ~ 1.
We have
VS(3)1/6
Imas = y L ";j Hz (6213)
where y = 0.14 for f.LEp/vs = 13 and y = 0.18 for f.LEp/vs = 20 in the case of
GaAs.
It has been found experimentally [6] that the maximum frequency of oscilla
tion for a gallium arsenide FET with the gate length less than 10 f.Lm is
33 X 10
3
Imax = L
Hz (6214)
where L = gate length in meters. The best value of L is 0.5 f.L m.
Sec. 6.2 MetalSemiconductor FieldEffect Transistors (MESFETs) 229
The maximum frequency of oscillation!max is similar to the cutoff frequency to
determined by the transit time. From Eq. (5158) the chargecarrier transittime
cutoff frequency is
1 V
s
to = 21TT = 21TL
Hz (6215)
where T = L is the transit time in seconds
V
s
L = gate length in meters
V
s
= saturation drift velocity in meters per second
It is evident that the gallium arsenide FET has a better figure of merit than the
silicon FET for an Xband amplifier because the saturation drift velocity V, is
2 X 10
7
em/sec for GaAs at an electric field of 3 kVlcm and 8 x 10
6
em/sec for sili
con at 15 kV/cm. In comparing Eq. (6215) with Eq. (6211), the difference is a
factor of onehalf.
The highest frequency of oscillation for maximum power gain with the input
and output networks matched is given [8] as
t.o ( Rd ) 1/2
!max = 2 R + R + R
.'i" R 1
where R
d
= drain resistance
R
s
= source resistance
R
8
= gate metallization resistance
R; = input resistance
Example 623: Cutoff Frequency of a MESFET
A certain GaAs MESFEf has the following parameters:
Hz (6216)
R; = 2.5 n
R
s
= 2.5 n
gm = 50 mU
C
8S
= 0.60 pF
a. Determine the cutoff frequency.
b. Find the maximum operating frequency.
Solution
a. From Eq. (6211), the cutoff frequency is
gm 0.05
tv =  = ,,
27TC
8
., 27T x 0.6 X 10
12
= 13.26 GHz
230 Microwave FieldEffect Transistors
b. From Eq. (6216), the maximum frequency is
1,,, ( Rd )1/2
f
max
=2 R+R +R
.\ ff I
= 13.26 X 10
9
( 450 )1/
2
2 2.5 + 3 + 2.5
= 49.73 GHz
Chap. 6
6·3 HIGH ELECTRON·MOBILITY TRANSISTORS (HEMTs}
The evolution of highspeed GaAs integrated circuits (ICs) is the result of continuous
technological progress utilizing the superior electronic properties of gallium arsenide
compared with those of silicon. Electron mobility in the MESFET channel with typ
ical donor concentrations of about 10
17
cm
3
ranges from 4000 to 5000 cm
2
IV' s at
room temperature. The mobility in the channel at 77° K is not too much higher than
at room temperature because of ionized impurity scattering. In undoped GaAs, how
ever, electron mobility of 2 to 3 X 10
5
cm
2
/V' s has been achieved at 77° K. The
mobility of GaAs with feasibly high electron concentrations for facilitating the fabri
cation of devices was found to increase through modulationdoping techniquel
demonstrated in GaAsAlGaAs superlattices [8]. A high electronmobility transistor
(HEMT), based on a modulationdoped GaAsAlGaAs single heterojunction struc
ture, was developed [9]. HEMTs have exhibited lower noise figure and higher gain at
microwave frequencies up to 70 GHz, and it is possible to construct HEMT am
plifiers at even higher frequencies of operation. The major improvements over MES
FETs include shorter gate lengths, reduced gate and source contact resistances, and
optimized doping profiles.
6·3·1 Physical Structure
The basic structure of a HEMT is a selectively doped GaAsAIGaAs heterojunction
structure as shown in Fig. 631.
An undoped GaAs layer and an Sidoped ntype AlGaAs layer are successively
grown on a semiinsulating GaAs substrate. A twodimensional electron gas
(2DEG) is created between the undoped and ntype layers. A buffer layer is sand
wiched between the undoped GaAs layer and the semiinsulator substrate.
The HEMT can be fabricated by using the integratedcircuit techniques. Fig.
632 indicates the sequence for the selfaligned gate procedures in the fabrication of
largescale integration HEMTs, including the E(enhacementmode) and D
(depletionmode) HEMTs.
The processing steps include the following:
1. Ohmic contact formation: The active region is isolated by a shallow mesa step
(180 nm), which is almost achieved in a single process, and can be made
nearly planar. The source and drain for E and DHEMTs are metallized with
Sec. 6.3 High ElectronMobility Transistors (HEMTs) 231
Source
AuGe/Ni
Gate SiN Drain
Ohmic contact
,
2 DEG Undoped AIGaAs
Undoped GaAs
S.1. buffer
\ GaAs S.1. \
\L. ~ J
Insulator EGaAs
l i ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ c a p layer AIGaAs
'fi' ______ _ _____ _ Y AlGaAs GaAs
Semiinsulating
GaAs substrate
(I)
Figure 631 A cross section of a
HEMT (From K. Togashi et al. [10[;
reprinted by permission of Microwave
Journal.)
Photoresist
(2)
(4)
Interconnect
metal
(5)
Figure 632 Processing steps for HEMT directcoupled FET logic (DCFL) circuits. (After
M. Abe and others [9J; reprinted by permission of IEEE, Inc.)
an AuGe eutectic alloy and an Au overlay alloy to produce ohmic contacts
with the electron layer.
2. Opening gate windows: The fine gate patterns are formed for EHEMTs as the
top GaAs layer and thin Al
o
.
3
Gao.? As stopper are etched off by nonselective
chemical etching.
3. Selective dry etching: With the same photoresist process for formation of gate
patterns in DHEMTs, selective dry etching is performed to remove the top
GaAs layer for DHEMTs and also to remove the GaAs layer under the thin
Al
o
.
3
Gao.7 As stopper for EHEMTs.
232 Microwave FieldEffect Transistors Chap. 6
4. Gate metallization: Schottky contacts for the E and DHEMT gate are pro
vided by depositing AI. The Schottky gate contacts and the GaAs top layer for
ohmic contacts are then selfaligned to achieve highspeed performance.
5. Interconnect metallization: Finally, electrical connections from the intercon
necting metal, composed of Ti, Pt, and Au, to the device terminals are pro
vided through contact holes etched in a crossover insulator film.
Figure 633 shows the crosssectional view of a typical selfaligned structure
of E and DHEMTs forming an inverter for the directcoupled FET logic (DCFL)
ciruit configuration [9].
EHEMT IHIEMT
_       .  . A A      ~ , ,. .AA .
Ohmic
contact Gate
Interconnect
metal
Insulator (Si0
2
)
Insulator (Si0
2
)
GaAs
AlGaAs
Electron layer
Semiinsulating GaAs substrate
GaAs
Figure 633 Crosssectional view of a DCFL HEMT. (After M. Abe et al. [9];
reprinted by permission of IEEE. Inc.)
6·3·2 Operational Mechanism
Since GaAs has higher electron affinity, free electrons in the AIGaAs layer are trans
ferred to the undoped GaAs layer where they form a twodimensional highmobility
electron gas within 100 Aof the interface. The ntype AIGaAs layer of the HEMT is
depleted completely through two depletion mechanisms (11):
1. Trapping of free electrons by surface states causes the surface depletion.
2. Transfer of electrons into the undoped GaAs layer brings about the interface
depletion.
The Fermi energy level of the gate metal is matched to the pinning point,
which is 1.2 eV below the conduction band. With the reduced AIGaAs layer thick
ness, the electrons supplied by donors in the AIGaAs layer are insufficient to pin the
surface Fermi level, and the spacecharge region is extended into the undoped GaAs
layer. As a result, band bending is moving upward and the twodimensional electron
gas (2DEG) does not appear. When a positive voltage higher than the threshold
Sec. 6.3 High ElectronMobility Transistors (HEMTs) 233
voltage is applied to the gate, electrons accumulate at the interface and form a two
dimensional electron gas.
The electron concentration can control D(depletionmode) and E(enhance
mentmode) HEMT operations. As temperature decreases, electron mobility, which
is about 8000 cm
2
/V' s at 300° K, increases dramatically to 2 x 10
5
cm
2
/V' s at
77° because of reduced phonon scattering. When the temperatures decrease fur
ther, the electron mobility of 1.5 x 10
6
cm
2
/V. s at 50
0
K and 2.5 x 10
6
cm
2
/V. s
at 4.5°K have been demonstrated.
6·3·3 Performance Characteristics
High electron mobility transistor (HEMT) amplifiers for 40 to 70 GHz have been
constructed. The 60GHz amplifier exhibited a gain of 4.5 to 6.5 dB across the fre
quency band 56 to 62 GHz, and had an associated noise figure of 6 dB measured at
57.5 GHz. The 72GHz amplifier achieved a gain of 4 to 5 dB with a bandwidth of
2.5 GHz [11].
Currentvoltage (IV) characteristics. The drain current can be evaluated
from the following basic equation
Ids = qn(z)Wv(z) (63 1)
where q = electron charge
n(z) = concentration of the twodimensional electron gas
W = gate width
v (z) = electron velocity
Figure 634 shows the IV characteristics of a HEMT amplifier with W =
150 J.Lm and L
g
(gate length) = 0.6 J.Lm at 30 GHz.
The major advantages of a HEMT are higher frequency, lower noise, and
higher speed. Table 631 compares HEMT data with other semiconductor elec
tronic devices.
Example 631: Current of a HEMT
A HEMT has the following parameters:
Gate width:
Electron velocity:
Twodimensional electrongas density:
W = 150/.Lm
v(z) = 2 X 10
5
mls
n(z) = 5.21 X 10
15
m
2
Determine the drain current of the HEMT.
Solution From Eq. (6 31), the drain current is
h, = qn(z)Wv(z)
= 1.6 x 10
19
x 5.21 X 10
15
x 150 X 10
6
x 2 X 10
5
= 25 rnA
234 Microwave FieldEffect Transistors Chap. 6
40
..:
E 30
E
"
1::
~
u 20
...... ..;
10
o
0.6 V
0.4 V
I:>.
I:>.
0.2 V
I:>.
I:>.
I:>.
OV
I:>.
I:>.
0.2 V
I:>.
I:>.
I:>.
I:>.
0.4 V
.{:t
A
I:>.
E
I:>.
1:>.0.6 V
I:>.
0.8 V
2 3 4 5 6 7
V
ds
in volts
Note:
I:>. for measured values
 for predicted values
Figure 634 1 V characteristics of a HEMT.
TABLE 6·3·1 HEMT PERFORMANCE COMPARED WITH OTHER DEVICES
Device Frequency (GHz) Noise Power Speed
HEMT Up to 70 Very Good Very Good Excellent
GaAs MESFET 40 Good Good Good
GaAsAlGaAs HBT* 20 Good Good Excellent
Si MOSFET 10 Poor Very good Very poor
Si bipolar transistor I Poor Poor Good
* HBT = heterojunction bipolar transistor
Equivalent circuit. In order to predict or calculate the values for a small or
largesignal HEMT amplifier, the following highfrequency equivalent circuit,
shown in Fig. 635, may be useful.
It is difficult to compare the optimized performance of most major semicon
ductor devices. The switching delay time of GaAs MESFETs is two or three times
longer than that of HEMTs. The GaAsAIGaAs heterojunction bipolar transistor
(HBT) can achieve the same highspeed performance as the HEMT. The ultimate
speed capability, limited by cutoff frequency iT, is more than 100 GHz, and the
HBT also has the merit of flexible fanout loading capability. The silicon MOSFEf
and the bipolar transistor have excellent performance in threshold voltage uniformity
and controllability with no material problems, and they are easy to fabricate despite
complex processing steps. HEMTs are very promising devices for highspeed, very
largescale integration (VLSI) with lowpower dissipation, but they require new
Sec. 6.3 High ElectronMobility Transistors (HEMTs) 235
L
d
0.14 nH
Cds
0.08 pI'
girl e
jW
{
541115 +
1.8 ps
R
gd
0.001 n
L
g
R
g
c
gd
0.15nH sn 0.0121'1'
Gate Drain
.1
0.18 pI'
SOUfC(:
Figure 635 Equivalent circuit of a HEMT.
(632)
technological breakthroughs to achieve the largescale integration (LSI) quality of
GaAsAIGaAs material. Such technologies include molecularbeam epitaxy (MBE),
organic metalvapor phase epitaxy (OMPVE), and selfalignment device fabrica
tions. The excellent controllability of MBE growth can regulate the ratio of standard
deviation of threshold voltage to the logic voltage swing.
The vertical threshold sensitivity is defined by the differential threshold
voltage to the thickness of the AI, Gal' As layer and is expressed as
dYth __ [ ( _ A _ )/ ]1/2
de  2qNd l/lms fj.Ec V'h f
where \!;h = threshold voltage in volts
e= AIGaAs layer thickness in meters
q = electron charge
N
d
= donor concentration
l/lms = metalsemicondcutor Schottky barrier potential between Al and GaAs
E
c
= conduction bandedge difference between GaAs and AIGaAs
f = fof
r
is the permittivity of AIGaAs
f
r
= dielectric constant of AIGaAs
Example 632: Sensitivity of HEMT
A HEMT has the following parameters:
Threshold voltage:
Donor concentration:
Metalsemiconductor Schottky
barrier potential:
V,h = 0.13 V
N
d
= 2 X 10
24
m
3
IjJms = 0.8 V
236
GaAs bandgap:
AIGaAs bandgap:
AIGaAs dielectric constant
Compute:
Microwave FieldEffect Transistors
Egg = 1.43 V
Ega = 1.80 V
E
r
= 4.43
Chap. 6
a. The conduction bandedge difference between GaAs and AIGaAs
b. The sensitivity of the HEMT
Solution
a. The conduction bandedge difference is
aE
c
= Ega  Egg = 1.80  1.43 = 0.37 V
b. The sensitivity of the HEMT is
d ~ [ ]/
de =  2qN
d
(l/Jms  aE
c
 Vth)/E 12
= [2 x 1.6 x 10
19
x 2 x 10
24
(0.80  0.37
 0.13)/(8.854 x 10
12
x 4.43)]1/2
[
0.49 X 10
4
]1/2
 = 70 mV/nm
10
12
I
dV,h I /
d = 70mV nm
6·3·4 Electronic Applications
The switching speed of a HEMT is about three times as fast as that of a GaAs MES
FET. The largestscale logic integrated circuit (Ie) with HEMT technology has
achieved the highest speed ever reported among 8 x 8 bit multipliers. The switching
delay time of a HEMT is below 10 picosecond with a power dissipation reported at
about 100 JLW. Therefore, HEMTs are promising devices for very largescale inte
gration, especially in very highspeed supercomputers, star wars, and space commu
nications.
Information processing in the 1990s will require ultrahighspeed computers,
having highspeed largescale integration circuits with logic delays in the sub
hundredpicosecond range. A 4K x 1 bit static randomaccess memory (SRAM)
device consists of a memory cell of 55 JL m x 39 JL m. Its normal readwrite opera
tion was confirmed both at 300
0
K and 77
0
K. The minimum address access time ob
tained was 2.0 nanosecond with a chip dissipation power of 1.6 Wand a supply
voltage of 1.54 V. The HEMT SRAMs have demonstrated better performance than
the SiMOS, BJT, and GaAs MESFET SRAMs.
Sec. 6.4
MetalOxideSemiconductor FieldEffect Transistors (MOSFETs) 237
6·4 METAL·OXIDE·SEMICONDUCTOR FIELD·EFFECT
TRANSISTORS (MOSFETs)
The metaloxidesemiconductor fieldeffect transistor (MOSFET) is a fourterminal
device, and its current flow is controlled by an applied vertical electric field. The
four terminals are denoted as the source, gate, drain, and substrate. When the gate
bias voltage is zero, the two backtoback pn junctions between the source and
drain prevent current flow in either direction. When a positive voltage is applied to
the gate with respect to the source (source and substrate are common), negative
charges are induced in the channel to provide current flow. Since the current is con
trolled by the electric field, this type of device is called the junction fieldeffect tran
sistor (JFET). The MOSFETs have superseded the bipolar junction transistors in
many electronic applications because their structures are simple and their costs are
low. In addition, the nchannel MOSFET (NMOS), pchannel MOSFET (PMOS),
complementary MOSFET (CMOS), logicgate memories, and the chargecoupled
devices (CCDs) have emerged as important semiconductor electronic devices. All
these devices are discussed in this section.
The metalinsulatorsemiconductor fieldeffect transistor (MISFET) may be
formed by a metal such as aluminum (AI) and a semiconductor, such as Ge, Si, or
GaAs, with an insulator such as Si0
2
, SbN
4
, or Ah03 sandwiched between. Ifthe
structure is in the form of AISi0
2
Si, it is called a MOSFET. This device is very
useful in very largescale integrated microwave circuits. In the near future, a
microwavedevice chip of IJL m dimension containing I million or more devices
will be commercially available. The basic component of a MOSFET is the MIS
diode which was described previously.
6·4·1 Physical Structures
The metaloxidesemiconductor fieldeffect transistor (MOSFET) is a fourterminal
device. There are both nchannel and pchannel MOSFETs. The nchannel MOS
FET consists of a slightly doped p type semiconductor substrate into which two
highly doped n+ sections are diffused, as shown in Fig. 641. These n+ sections,
which act as the source and the drain, are separated by about 0.5 JLm. A thin layer
of insulating silicon dioxide (Si0
2
) is grown over the surface of the structure. The
metal contact on the insulator is called the gate.
Similarly, the p channel MOSFET is made of a slightly doped ntype semi
conductor with two highly doped p+type regions for the source and drain. The heav
ily doped polysilicon or a combination of silicide and polysilicon can also be used as
the gate electrode. In practice, a MOSFET is commonly surrounded by a thick oxide
to isolate it from the adjacent devices in a microwave integrated circuit. The basic
device parameters of a MOSFET are as follows: L is the channel length, which is the
distance between the two n+p junctions just beneath the insulator (say, 0.5 JLm), Z
is the channel depth (say, 5JLm), d is the insulator thickness (say, 0.1 JLm), and rj is
the junction thickness of the n+ section (say, 0.2 JLm).
238 Microwave FieldEffect Transistors Chap. 6
s
y
ptype
semiconductor
D
Metal
electrode
nchannel
S+....H...'
G
Figure 641 Schematic diagram of an nchannel MOSFET.
6·4·2 Electronic Mechanism
When no voltage is applied to the gate of an nchannel MOSFET, the connection be
tween the source electrode and the drain electrode corresponds to a link of two pn
junctions connected backtoback. The only current that can flow from the source to
the drain is the reverse leakage current. When a positive voltage is applied to the
gate relative to the source (the semiconductor substrate is grounded or connected to
the source), positive charges are deposited on the gate metal. As a result, negative
charges are induced in the ptype semiconductor at the insulatorsemiconductor in
terface. A depletion layer with a thin surface region containing mobile electrons is
formed. These induced electrons form the nchannel of the MOSFET and allow the
current to flow from the drain electrode to the source electrode. For a given value of
the gate voltage V
g
, the drain current Id will be saturated for some drain voltages V
d
•
A minimum gate voltage is required to induce the channel, and it is called the
threshold voltage V,h. For an nchannel MOSFET, the positive gate voltage V
g
must
be larger than the threshold voltage V,h before a conducting nchannel (mobile elec
trons) is induced. Similarly, for a pchannel MOSFET, the gate voltage V
g
must be
more negative than the threshold voltage V,h before the p channel (mobile holes) is
formed.
6·4·3 Modes of Operation
There are basically four modes of operation for nchannel and p channel MOSFETs.
1. nChannel Enhancement Mode (normally OFF). When the gate voltage is
zero, the channel conductance is very low and it is not conducting. A positive
Sec. 6.4 MetalOxideSemiconductor FieldEffect Transistors (MOSFETs) 239
voltage must be applied to the gate to form an n channel for conduction. The
drain current is enhanced by the positive voltage. This type is called the
enhancementmode (normally OFF) nchannel MOSFET.
2. nChannel Depletion Mode (normally ON). If an n channel exists at equi
librium (that is, at zero bias), a negative gate voltage must be applied to deplete
the carriers in the channel. In effect, the channel conductance is reduced, and
the device is turned OFF. This type is called the depletionmode (normally
ON) nchannel MOSFET.
3. p Channel Enhancement Mode (normally OFF). A negative voltage must be
applied to the gate to induce a p channel for conduction. This type is called the
enhancementmode (normally OFF) pchannel MOSFET.
4. p Channel Depletion Mode (normally ON). A positive voltage must be applied
to the gate to deplete the carriers in the channel for nonconduction. This type is
called the depletionmode (normally ON) pchannel MOSFET.
Figure 642 shows the four modes of the MOSFETs, and Fig. 643 illustrates
their electric symbols, output IV characteristics, and transfer characteristics.
Enhancement
(normal1yoff)
G
Enhancement
(normal1yoff)
G
Depletion
(nonnal1y on)
(a)
Depletion
(nonnal1yon)
(b)
Figure 642 Four modes of operation
for MOSFEfs: (a) n channel and (b) p
channel.
6·4·4 Drain Current and Transconductance
Drain current. The drain current ld of the MOSFET is dependent of the
drain voltage V
d
• It first increases linearly with the drain voltage in the linear region
and then gradually levels off to a saturated value in the saturation region. Figure
644 shows the currentvoltage characteristic curves of an nchannel MOSFET [12].
240 Microwave FieldEffect Transistors
Type
Electrical Output
Transfer
symbol characteristic
characteristic
G
nchannel
1
enhancement
(nonnallyoff)
solILD
0
V
D
.. +

oV
T
+
V
G
G
nehannel
depletion
(normally on)
L
S f)
0
V
o

+

0 +
as
V
G
G V
G
1
_ .. V
D
0

V
T
0
pehannel
enhancement
(normally off)
t t Iv
G
V
1
G
pchannel

_V
n
0
 0
+
depletion
(nonnallyon)
G  t tin
Figure 643 Electric symbols and output and transfer characteristics of the four
modes of MOSFETs.
Chap. 6
(642)
The drain current I
d
is given by [12] as
I
d
= i JLnC
i
{ (Vir  2l/Jb  V
d
 (2E
s
qN
a
)I/2[(Vd + 2l/Jb)1/2  (2l/Jb) 1/2]}
(641)
where JLn = electron carrier mobility
C
i
= is the insulator capacitance per unit area
Ei = insulator permittivity
Vir = gate voltage
l/Jb = (E
i
 EF)/q is the potential difference between the Fermi level E
F
and
the intrinsic Fermi level E
i
V
d
= drain voltage
E
s
= semiconductor permittivity
q = carrier charge
N
a
= acceptor concentration
In the linear region, the drain voltage is small and Eq. (641) becomes
Z [( ) (1 VEsqN
a
/ l/Jb ) 2]
I d = IJLnCi Vir  V
th
V
d
 2+ 4C
i
V
d
Sec. 6.4 MetalOxideSemiconductor FieldEffect Transistors (MOSFETs)
241
2
5
3
4
1
10
50
(Vg  V
th
)=10 V
9
40
Linear Saturation
region region
8
30
l
C
7
::L
...... '"
20
2 4 6 8 10 12 14 16 18
V
d
in volts
Figure 644 CurrentVoltage (IV) curves of an nchannel MOSFET.
or
Z
I d = LjJn Ci(Vg  Vth)Vd
where = 2I/Jb + (EsqN
a
I/Jb) 1/2
In the saturation region, the drain current is given by
(643)
(644)
where m = 0.5 is the low doping factor, and V
dsat
= V
g
 V
th
may be assumed
Transconductance. The transconductance gm, which is also called the mu
tual conductance, in the linear region can be found from Eq. (643) as
242 Microwave FieldEffect Transistors Chap. 6
(645)
In the saturation region, the transconductance becomes
2mZ
gm sat = L JLn Ci(VR  Vrh )
The channel conductance gd is given by
aId I Z
gd = av = LJLn C(VR  Vrh )
d Vg=constant
(646)
(647)
All equations derived here so far are based on the idealized nchannel MOSFET. For
an idealized pchannel MOSFET, all voltages V
R
, V
d
, and ~ h are negative, and the
drain current I
d
flows from the source to the drain. For a real nchannel MOSFEf
(say, AIOxideSi structure), the saturation drain current is
I
dsat
= ZCi(V
R
 Vrh)v
s
and the transconductance becomes
gm = ZCv
s
where V
s
= LIT is the carrier drift velocity
The threshold voltage ~ h is given by
v. = cPms  Qf + 2.1, + 2 (e qN .1, )1/2
rh C 'l'b C s a'l'b
q i i
(648)
(649)
(6410)
where cPms = cPm  cPs is the work function difference (in eV) between the metal
work function cPm and the semiconductor work function cPs
Qf = fixed oxide charges
Example 641: Threshold Voltage of an Ideal MOSFET
A certain p channel MOSFEf has the following parameters:
Doping concentration:
Relative dielectric constant:
Relative dielectric constant
of Si0
2
:
Insulator depth:
Operating temperature:
N
a
= 3 X lOl7 cm
3
E
r
= 11.8
Eir = 4
d = 0.01 JLm
T = 300
0
K
a. Calculate the surface potentialljJ, (inv) for strong inversion.
b. Compute the insulator capacitance.
c. Determine the threshold voltage.
Sec. 6.4 MetalOxideSemiconductor FieldEffect Transistors (MOSFETs) 243
Solution
a. From Eq. (644), the surface potential for strong inversion is
(
3 X 10
17
)
!/Jsinv = 2 x 26 X 10
3
en 1.5 x 10
10
= 0.874 volt
b. From Eq. (641), the insulator capacitance is
_ E; _ 4 x 8.854 X 10
12
_ 2
C;  d  0.01 x 10 6  3.54 mF/m
c. From Eq. (643), the threshold voltage is
2
~ h = 0.874 + 3.54 x 10
3
x (8.854 X 10
12
x 1l.8
x 1.6 x 10
19
X 3 X 10
23
X 0.437)1/2
= 0.874 + 0.56 X 10
3
X 14.80 X 10
4
= 1.70 volts
6·4·5 MaximumOperating Frequency
The maximum operating frequency of a MOSFET is determined by its circuit
parameters. A commonsource equivalent circuit of a MOSFET is shown in Fig.
645.
where gin = input conductance due to the leakage current. Since the leakage
current is very small, say 10
10
A/cm
2
, gin is negligible
Cn = ZLC is the input capacitance
C
fb
= feedback capacitance
gout = gd is output conductance
Cout = C; Cs/(C; + C
s
) is the sum of the two pn junction capacitances In
series with the semiconductor capacitance per unit area
Gate
Cfb
Drain
gm V
g
V
gin
C
in gout
C
out
V
d
g
Figure 645 Equivalent circuit of a commonsource MOSFET.
244 Microwave FieldEffect Transistors Chap. 6
The maximum operating frequency of a MOSFET in the linear region can be ex
pressed as
(6411)
In the saturation region, V
g
~ V
th
, the transconductance is reduced to
(6412)
6·4·6 Electronic Applications
The MOSFETs are often used as power amplifiers because they offer two advantages
over MESFETs and JFETs.
1. In the active region of an enhancementmode MOSFET, the input capacitance
and the transconductance are almost independent of gate voltage, and the out
put capacitance is independent of the drain voltage. This leads to very linear
(Class A) power amplification.
2. The active gatevoltage range can be larger because nchannel depletiontype
MOSFETs can be operated from the depletionmode region (V
g
) to the
enhancementmode region (+V
g
).
Example 642: Characteristics of a MOSFET
A certain nchannel MOSFET has the following parameters:
Channel length:
Channel depth:
Insulator thickness:
Gate voltage:
Doping factor:
Threshold voltage:
Electron mobility:
Electron velocity:
Relative dielectric
constant of Si0
2
:
L = 4J.Lm
Z = 12 J.Lm
d = 0.05 J.Lm
V
g
= 5 V
m=1
¥'th = 0.10 V
J.Ln = 1350 X 10
4
m
2
1Y' s
'V
s
= I.70 X 10
7
cmls
€ir = 3.9
a. Compute the insulator capacitance in Flm
2
•
b. Calculate the saturation drain current in rnA.
c. Determine the transconductance in the saturation region in millimhos.
d. Estimate the maximum operating frequency in the saturation region in GHz.
Sec. 6.5 MOS Transistors and Memory Devices 245
Solution
a. The capacitance of the insulator Si0
2
is
C = ~ = 3.9 x 8.854 x lC
l2
= 691 x 1O4F/m2
I d 0.05 x 10 6 •
b. From Eq. (648), the saturation drain current is
Id'O' = ZC;(V
g
 Vth)v
s
= 12 X 10
6
x 6.91 X 10
4
x (5  O.l) x 1.7 x J05
= 6.91 rnA
c. From Eq. (649), the transconductance in the saturation region is
gmsa' = ZC;vs
= 12 X 10
6
x 6.91 X 10
4
x 1.7 X 10
5
=IAlmU
d. From Eq. (6413), the maximum operating frequency is
V
s
1. 7 X 10
5
1m = 21TL = 21T x 4 X 106 = 6.76 GHz
6·5 MOS TRANSISTORS AND MEMORY DEVICES
As discussed in Section 62, the source, channel, and the drain of the MOS transis
tor are surrounded by a depletion region, so there is no need to isolate individual
components. This elimination of isolation regions in MOS transistors allows a much
greater packing density on a semiconductor chip than is possible with bipolar junc
tion transistors. The MOSFET can be subdivided into two groups:
1. The nchannel MOSFET is commonly referred to as an NMOS.
2. The complementary MOSFET is usually called a CMOS. The CMOS provides
n channel and p channel MOSFETs on the same chip.
The fabrication technology for an NMOS is much simpler than for the bipolar tran
sistor. The CMOS circuit has lower power dissipation than both the bipolar transistor
and the NMOS circuits. So both NMOS and CMOS devices are very useful in high
density integrated circuits.
6·5·1 NMOS Devices
The metaloxidesemiconductor fieldeffect transistor (MOSFET) is the dominant
device used in very largescale integration (VLSI) circuits. In the 1960s, the pchan
net MOS (PMOS) was originally used in integrated circuits. nchannet MOS (NMOS)
246
Microwave FieldEffect Transistors Chap. 6
devices, however, have dominated the Ie market since the 1970s because their elec
tron mobility is higher than that of holes.
NMOS structure. Figure 651 shows a threedimensional view of an
NMOS logic circuit.
Source
y
EMD
A
p'
I
Enhancement Buried
channel contact
implant
y
DMD
Psubstrate
Figure 651 Threedimensional view of an NMOS logic circuit. (After Parrillo [13J;
reprinted by permission of the Bell Laboratory.)
From Fig. 651, it can be seen that two enhancementmode (normally OFF)
devices (EMD
A
and EMD
B
) are in series with a depletionmode (normally ON)
device (DMD). A field oxide (FOX) surrounds the transistors, and the gate and
source of the DMD are connected at the buried contact. An intermediate dielectric
layer separates the overlying metal layer from the underlying layers. In the JFET the
high input resistance is obtained from the reversebiased pn junction. In the MOS
FET the extremely high input resistance ( ~ 1 0
1 4
ohms) is made possible by the insu
lator.
There are two basic structures for MOSFETs: the depletion type and the in
duced type as shown in Figs. 652 and 653, respectively. The major difference
between them is that with the terminals of the device opencircuited, the depletion
type has a conducting channel that links the drain to the source; the induced type has
a channel of opposite type to that of the drain and the source linking the two re
gions. When the device has ptype source and drain regions, it is called the p
channel MOSFET or PMOS.
Oxide
(insulatOr)
Transition
region edge
Drain
V
D
Metal ohmic
contact
Gate
V
G
1'Type substrate
Source
V
s
Usually the
substrate is
connected
to the source L 
Oxide
(insulator)
Drain
V
D
/
Metal ohmic
contact
Gate
V
c
pType substrate
Source
V
s
I
I
II II II " II
, J J
L _I \
Transition
region edge
Usually the
substrate is
connected
to the source L         
V
ST
Substrate terminal
la I Crosssectional view
V
ST
Substrate terminal
(a) Crosssectional view
I
D
1 Vr;s = VDr;  Vp
/
/
I
D V
GS
= V
DC
 V
p
I
I
"""
1_ }
mode
)
 mode
V/J(;
(bl IV curves
Figure 652 nchannel depletiontype MOSFEf.
V
GS
>0
Enhancement
mode
_Vc;s =0
V
DC
(b) IV curves
Figure 653 nchannel inducedtype MOSFEf.
248 Microwave FieldEffect Transistors Chap. 6
The structures of enhancement and depletion modes refer to the relative in
crease or decrease of the majority carrier density in the channel connecting the
source to the drain. If a given gate bias tends to increase the majority carrier density
in the channel, the device is said to be operated in the enhancement mode (normally
OFF). Hence, if the gate in an NMOS is biased by a positive voltage with respect to
the substrate, which tends to drain more electrons into the ntype channel, it is said
to be operated in the enhancement mode. If a negative gate potential with respect to
the substrate is applied in order to diminish the electron density in the n channel,
then it is said to be operated in the depletion mode. For a pchannel MOSFEf
(PMOS), when the negative gate potential with respect to the substrate is biased, the
device is operated in the enhancement mode; and when the positive gate voltage is
applied, the device is operated in the depletion mode. When a MOS is operated in
the enhancement mode, the drain current is higher because the majority carrier den
sity is higher. When, however, the MOS is operated in the depletion mode, the drain
current is lower because the majority carrier density is lower.
NMOS operation. The operation of an NMOS can be described as a logic
gate as shown in Fig. 654.
Two enhancementmode devices (EMD) are in series with a depletionmode
device (DMD), and the three transistors are connected between the positive power
supply V
oo
and ground V
ss
reference. The DMD is normally on at V
GS
= 0 and acts
as a current source for the two EMDs. Gates A and B of the two EMDs serve as in
puts to the logic circuit, and the DMD's gatesource connection is the output elec
trode of the logic circuit. The output voltage of the twoinput NAND circuit is low
only when both EMDs are turned on at their logichigh level.
NMOS devices can be also used as NORgate circuits, as shown in Fig. 655.
The twoinput enhancementmode NMOS devices are called drivers, and the
depletionmode MOSFET, the load. When there is a logic 0 state input signal (low
voltage at V,,) at the driver device, the device has a very small channel current and
the output is at 1 state (the output voltage is close to V
oo
). But when the input signal
is at 1 state, the device conducts a large current with a small voltage drop across the
driver, and the output is at 0 state. The input and output are inverted and a NOR
logic is achieved.
6·5·2 CMOS Devices
The complementary MOS (CMOS) is made of both NMOS and PMOS devices, and
its power consumption is quite low. In some CMOS designs, the NMOS circuit is in
corporated in dominoCMOS to take advantage of the NMOS's high speed and the
CMOS's low power. .
CMOS structure. There are three structures of CMOS devices: n tub, p tub,
and twin tub. When a tub is formed in a ptype substrate, the device is called an n
tub, just as when in an ntype substrate it is called a p tub. If an ntub and a p tub
are combined on the same substrate, the device is referred to as a twin tub. A tub is
Sec. 6.5 MOS Transistors and Memory Devices 249
A B A'B
'y'
Inputs Output
(a)
Polysilicon
(h)
Polysilicon
SiN
PGIass
(c)
Figure 654 Twoinput NAND logic
gate. (After Parrillo [13]; reprinted by
permission of the Bell Laboratory.)
Psubstrate
Buried
contact
FOX
"+, n+
Chan
stop
D D
G G
V
vss Figure 655 NOR logic gate.
Oxide
250
,,Channel pChannel
Polysilicon
Microwave FieldEffect Transistors Chap. 6
la) " tub
pGlass Nitride Polysilicon AQ
_____________ ~ f : £ i ! : : x !  _
,,+ Substrate
Ib) Ii tub
,,'
/' or}/ substrate
Polysilicon '1[ Si0
2
~ Si0
2
Ie) Twin tub
Figure 656 CMOS structures. (After
L.c. Parrillo [13]; reprinted by permis
sion of the Bell Laboratory.)
also called a well, and it can be produced by extra diffusion steps. Figure 656
shows the structures of an n tub, a p tub, and a twin tub.
CMOS operation. The operation of a CMOS inverter is shown in Fig.
657. The p channel transistor is formed in the n type structure, and the n channel
transistor is grown in the p region, which in turn is formed in the ntype substrate.
The p region acts as the nchannel transistor's substrate (back gate) and it is com
monly referred to as a tub or well. The gates of the n  and p channel transistors are
connected and serve as the input to the inverter. The common drains of each device
are the output of the inverter. The threshold voltage of the n  and p channel transis
tors are v'n and V,p, respectively, (V,p < 0). Figure 657(c) shows the dependence
of the output voltage v" on the input voltage ~ of the CMOS inverter. For ~ = 0,
the n channel transistor is OFF (VI ~ V
rn
), while the p channel transistor is heavily
turned ON (that is, the gatetosource voltage of the p channel is  V
DD
, which is
much more negative than V,p). Therefore, the output voltage is Va = V
DD
• As the in
put voltage VI is increased above zero, the nchannel transistor eventually is turned
Sec. 6.5 MOS Transistors and Memory Devices
251
IISubstrate
In) Circuit diagram Ib) Device crosssection
5
\ I
\ I
p\
IN
3
\ I
"
Cl
\ I
"'"
Cl
....
3'
(d) Current curve
Figure 657 CMOS operation. (After Parrillo [13]; reprinted by permission of
the Bell Laboratory.)
ON, while the pchannel transistor finally turns OFF. When VI > (VDD  I~ p I), the
output voltage is V
o
= V
ss
.
The key feature of a CMOS gate is that in either logic state (VO = V
DD
or V
ss
)
one of the two transistors is OFF and the current conducted between V
DD
and V
ss
is
negligible. Figure 657(d) shows the current I
DD
as a function of VI. A significant
current is conducted through the CMOS circuit only when both transistors are ON at
the same switching time. The low power consumption of CMOS is one of its most
important contributions. The performance and simplification of circuit design are
other attractive features of the CMOS device. CMOS provide the circuit designer
with flexibility in designing circuits that are either static CMOS (a p channel transis
tor for every n channel transistor) or dynamic CMOS (unequal number of n and p
channel transistors).
252 Microwave FieldEffect Transistors Chap. 6
6·5·3 Memory Devices
Memories are devices that can store digital data or information in terms of bits
(binary digits). Many memory chips were designed and developed by using NMOS
devices. The major semiconductor memory categories are ROM, PROM, EPROM,
EEPROM, SRAM, BSRAM, and DRAM. The unit cells of the memory types are
shown in circuit schematics in Fig. 658 [14].
W t+ w,+_ w_+
B
la) ROM
B
(bl PROM
Ii
lei EPROM
Ii
(ell HPROM
W' +4o+_
B
I
w.t
B B
w  +    ~ p _ _    + _
B
..........+w
B
W+..,..
Ie) SRAM If I BSRAM (g) DRAM
Figure 658 Circuit diagrams of memory types. (After S. Asai [i4J; reprinted by permis
sion of iEEE, inc.)
ROM. The readonly memory (ROM) is also called mask ROM. During fab
rication stage, the information is inscribed (and cannot be altered) in the form of
presence or absence of a link between the word (access) line and the bit (sense) line.
This causes the presence or absence of a readout signal on the bit line when the word
line is activated. The essential part of the ROM is the way the link is provided, since
the link determines the cell size (and thus the cost per bit) and the turnaround time
(TAT). Fast, highdensity ROMs are in great demand for personal computers.
Sec. 6.5 MOS Transistors and Memory Devices 253
PROM. The programmable readonly memory (PROM) is one of the ROMs
that are fieldprogrammable but lack "erase" capability. PROM uses cells with a fuse
that can be blown open electrically, or a pn diode that can be shortcircuited by an
avalanching pulse. A bipolar PROM has 64Kbit pn diode cells, and MOS PROMs
have higher density but slower speed.
EPROM. EPROM stands for the erasable programmable readonly memory.
In the EPROM cell, the presence or absence of charge in the floating gate of a
doublepolygate MOSFET determines the logic state. Programming is done by in
jecting energetic carriers generated by drain pn junction avalanche breakdown,
thereby increasing the threshold voltage V'h of the memory transistor. The EPROM
is, therefore, also called the FAMOS (floatinggate avalanche injection MOS)
device. When ultraviolet light is shone on the device, the charge in the floating gate
is released, thereby erasing the memory. EPROMs are therefore packaged with a
glass window to permit the erasing operation to occur. The original p channel
FAMOS cell, which has two transistors in seriesone for storage and the other for
access, has been replaced by nchannel, singletransistor cells. The original
programming voltage of 30 V has been reduced to around 12 V. The most advanced
IMbit EPROMs today have a cell size of 1929 JLm
2
and an access time of
80140 ns.
EEPROM. EEPROM designates the electrically erasable programmable
readonly memory, and it is the most sophisticated in its principle of operation. For a
ROM to be electrically erasable, it must have the means to inject and extract charge
carriers into and from a floating gate. The first proposal for an EEPROM used the
electrontrapping states at the nitrideoxide interface in a metalnitrideoxidesilicon
(MNOS) structure with a very thin (about 2 nm) oxide. The recent dominant tech
nology of EEPROM uses a floating gate separated from the silicon by an oxide
(about 150A thick). Programming and erasing in either type of EEPROM is achieved
by forcing the channel current to flow between the gate and substrate with the con
trol biased and negative, respectively.
Both EPROM and EEPROM store charge on a conductive region in the middle
of a MOSgate oxide, and are, therefore, critically dependent on MOS structure, es
pecially highfield carrier transport in both silicon and oxide. Because carriers in the
floating island stay there even after the power supply is turned off, EPROM and
EEPROM are also nonvolatile memories.
SRAM. The randomaccess memory (RAM) is one of the largest memories.
In a RAM, memory cells are organized in a matrix form, and they can be accessed
in random order to read (retrieve) or write (store) data. A static randomaccess
memory (SRAM) can retain stored data indefinitely, and it can be implemented as a
flipflop circuit to store one bit of information. Since SRAMs use flipflop ciruits in
the memory cells, they are the most basic of all semiconductor memories. Active
devices for access and drive are either MOS transistors or bipolar transistors.
254
Microwave FieldEffect Transistors Chap. 6
BSRAM. The bipolar SRAM (BSRAM) is the fastest of all the semiconduc
tor memory types, but MOS SRAM is the fastest among MOS memories. Figure
659 shows the equivalentcircuit diagrams for bipolar SRAMs.
SBD
RII
Lateral
1'111'
PSubstrate
Vertical
npn
PSu bstrate
(al Crosscoupled 1'/1/1 load cell (b) Equivalent circuit for bipolar SRAM
Figure 659 Circuit diagram for BSRAM.
DRAM. The first dynamic randomaccess memory (DRAM) used onehalf of
the static memory cell, or three transistorsone for the driver, another for the load,
and the third for the access. This device has evolved to today's onetransistor, one
capacitor DRAM cell, in which the single transistor is used as the access to the ca
pacitive reservoir. Since the stored charge is gradually lost because of the space
charge generationrecombination process, cells have to be read and refleshed at
predetermined intervals on the order of milliseconds (hence, the name dynamic).
The DRAM readout signal is small, on the order of 150200 mY, and is subject to
various kinds of noise sources.
66 CHARGECOUPLED DEVICES fCCDs}
The chargecoupled device (CCD) is a metaloxidesemiconductor (MOS) diode
structure that was proposed in 1969 by Boyle and Smith [15, 16]. The CCD can
move the charges in the MOS diode along a predetermined path under the control of
Sec. 6.6 ChargeCoupled Devices (CCDs) 255
clock pulses, and so it is also called the chargetransfer device (CTD). CCDs have
many microwave applications, such as in infrared detection and imaging and digital
signal processing. There are three basic types of CCDs: surfacechannel CCD
(SCCD), buriedchannel CCD (BCCD), and junction CCD (JCCD). In the SCCD or
BCCD the charge is stored and transferred at the semiconductor surface or in the
semiconductor interior, respectively; whereas in the JCCD the store and transfer of
the charge packet occur at the pn junction.
The motion of the charge packets in a chargecoupled device is transversely
controlled by the applied gate voltages. This phenomenon is similar to the carrier
motion in a microwave fieldeffect transistor like MESFET or MOSFET. In effect,
the CCD can be referred to as the fieldeffect CCD.
6·6·1 Operationallflechanism
A chargecoupled device (CCD) is an array of many MOS or MIS diodes. In opera
tion, the information (or signal) is stored in the form of electrical charge packets in
the potential wells created in a MOS diode. Under the control of externally applied
voltage (i.e., gate voltage), the potential wells and the charge packets can be shifted
from one well to an adjacent one rapidly through the entire CCD structure.
Three separate mechanisms allow the charge packets to move from one well to
another: selfinduced drift, thermal diffusion, and fringing field drift. Thermal diffu
sion results in an exponential decay of the remaining charge under the transferring
electrode. The fringing field is the electric field in the direction of charge flow and it
can help speed the chargetransfer process considerably. Selfinduced drift (or a
chargerepulsion effect) is only important at relatively large signalcharge densities.
It is the dominant mechanism in the transfer of the first 99% of the charge signal.
Energy band of MIS diode. A single MIS structure on an ntype semicon
ductor (or p type semiconductor) is the basic element of the CCD. Figure 661
shows the energy band diagrams for a MIS structure [15].
 E
F
r
t
nsemiconductor
r
Depletion
edge
: Vl
I
I
t
Distance
(al (b)
Figure 661 Energyband diagrams of MIS structure. (From W. S. Boyle and G. E. Smith
[15]; reprinted with permission from The Bell System, AT&T.)
256
Microwave FieldEffect Transistors
Chap. 6
The voltage applied to the metal electrode is negative with respect to the semi
conductor and large enough to cause depletion. When the voltage is first applied at
t = 0, there are no holes at the insulatorsemiconductor interface [see Fig.
661 (a)]. As holes are introduced into the depletion region, they will accumulate at
the interface and cause the surface potential to be more positive [see Fig. 66I(b)].
Threephase structure. The CCD can be constructed in the form of a typi
cal threephase structure as shown in Fig. 662 [16].
V
I
=5V V
2
=IOV V
3
=5V
IHype silicon
(a)
Silicon dioxide
IHype silicon
(b)
Figure 662 Cutaway of CCD. (From W. S. Boyle and G. E. Smith [16];
reprinted by permission of the IEEE, Inc.)
The CCD consists of a closely spaced array of MIS diodes on an ntype semi
conductor substrate with a large negative gate voltage applied. Its basic function is to
store and transfer the charge packets from one potential well to an adjacent one. As
shown in Fig. 662(a), VI = V
3
and V
2
is more negative. In effect, a potential well
with stored holes is created at gate electrode 2. The stored charge is temporary be
cause a thermal effect will diffuse the holes out of the wells. Therefore the switching
time of the voltage clock must be fast enough to move all charges out of the occupied
well to the next empty one. When the voltage V
3
is pulsed to be more negative than
the other two voltages VI and V
2
, the charge begins to transfer to the potential well at
gate electrode 3 as shown in Fig. 662(b).
Sec. 6.6 ChargeCoupled Devices (CCDs) 257
Store and transfer of charge packets. A linear array of MIS diodes on
an ntype semiconductor is shown in Fig. 663 [15].
, +++ r, ~     , +++ ,.
L_.J L._.J L._.J
(a)
~ +++r' ,...., +++r
1.._., I L_., I 1._, I
... _ ~ ~ _ ~ L . _ ~
(b)
., T++ ~     . , r, ++.;"r
L . _ ~ ... _ ~ L . _ ~
(c)
Figure 663 Store and transfer of charge packets for a threephase CCD. (From
W. S. Boyle and G. E. Smith [15J; reprinted by permission of The Bell System,
AT&T.)
For a threephase CCD, every third gate electrode is connected to a common
line (see Fig. 663). At t = tl, a more negative voltage VI is applied to gate elec
trodes 1, 4, 7, and so on, and less negative voltages V
2
and V
3
(V2 = V
3
) are applied
to the other gate electrodes. It is assumed that the semiconductor substrate is
grounded and that the magnitude of VI is larger than the threshold voltage Vth for the
production of inversion under steadystate conditions. As a result, positive charges
are stored in the potential wells under electrodes I, 4, 7, ... as shown in Fig.
663(a).
At t = t2, when voltage V
2
at gate electrodes 2,5,8, ... is pulsed to be more
negative than VI and V
3
, the charge packets will be transferred from the potential
wells at gate electrodes I, 4, 7, ... to the potential minimum under gate electrodes
2, 5, 8, ... as shown in Fig. 663(b).
At t = t3, when voltages VI = V
3
and voltage V
2
remains more negative, the
charge packets have been transferred one spatial position and the sequence is ready
to continue as shown in Fig. 663(c).
258
Microwave FieldEffect Transistors Chap. 6
662 SurfaceChannel ChargeCoupled Devices
(SCeDs)
A surfacechannel chargecoupled device (SCCD) is basically an MOSdiode struc
ture as shown in Fig. 664(a) [28]. Its energy band diagrams are illustrated in parts
(b) and (c).
1:.1 \10S dlod,
ILP
ell
";;so I'lllpt\
l .
ttt
s
";"50   T
t
 .
 
Well panlall)
filled '0\ Itil
signal (harge
(661)
Figure 664 Physical structure and energyband diagrams of a BCCD. (From D. F. Barle
[28J; reprinted with permission of the IEEE. Inc.)
There are two cases for the creation of a charge packet under deep depletion.
1. Zero SignalCharge (Qsig = 0). When the signal charge is zero, an empty well
is formed by the potential minimum at the semiconductor surface as shown in
Fig. 664(b). Gate voltage V
g
and surface potential rPs are related by
qNaW
Vg  Vtb = Vi + rPs = c: + rPs
Sec. 6.6 ChargeCoupled Devices (CCDs) 259
where V
fb
= flatband voltage
Vi = voltage across the insulator
W
h d l' 'd h
= qN
a
III t e ep etlOn WI t
Substitution of the depletion width into Eq. (661) yields
(662)
(663)
2. Stored SignalCharge (Qsig > 0). When a signalcharge packet is stored at the
semiconductor surface, the surface potential decreases and the potential well is
partially filled as shown in Fig. 664(c). The surface potential equation of Eq.
(662) becomes
V
g
 Vfb = + + o/s
The maximum charge density (electron or hole) that can be stored on an MOS
capacitor is approximately equal to
N
= CV
g
max
q
6·6·3 Dynamic Characteristics
(664)
The dynamic characteristics can be described in terms of chargetransfer efficiency
T/, frequency response, and power dissipation.
Chargetransfer efficiency 71. The chargetransfer efficiency is defined as
the fraction of charge transferred from one well to the next in a CCD. The fraction
left behind is the transfer loss and it is denoted by Therefore the chargetransfer
efficiency is given by
(665)
If a single charge pulse with an initial amplitude Po transfers down a CCD register,
after n transfers, the amplitude P
n
becomes
for <{ 1 (666)
where n equals the number of transfers or phases.
If many transfers are required, the transfer loss must be very small. For ex
ample, if a transfer efficiency of 99.99% is required for a threephase, 330stage
shift register, the transfer loss must be less than 0.01 %. The maximum achievable
transfer efficiency depends on two factors: how fast the free charge can be trans
ferred between adjacent gates and how much of the charge gets trapped at each gate
location by stationary states.
260
Microwave FieldEffect Transistors Chap. 6
Frequency response. There are, in fact, upper and lower frequency limi
tations for CCOs. The potential well will not remain indefinitely, and thermally gen
erated electrons (or holes) eventually fill the well completely. Also, the time stored
by the charge must be much shorter than the thermal relaxation time of the CCO's
capacitor. So the maximum frequency is limited by the channel length L.
Power dissipation. The power dissipation per bit is given by
P = njVQrnax
Example 661: Power Dissipation of a ThreePhase CCD
A threephase CCD is operating under the following conditions:
(667)
Applied voltage:
Number of phases:
Maximum stored charges:
Clock frequency:
v = 10 volts
n = 3
Qrnax = 0.04 pC
f = 10 MHz
Determine the power dissipation per bit.
Solution From Eq. (667) the power dissipation per bit is
P = nfVQrnax = 3 X 10
7
X 10 x 0.04 X 10
12
= l2/LW
Chargecoupled devices (CCOs) have many microwave applications in electronic
components and systems, such as in infrared systems and signal processing.
Infrared detection and imaging. Because varying amounts of charge cor
responding to information can be introduced into the potential wells at one end of
the CCO structure to emerge after some delay at the other end, the CCO is capable
of detecting and imaging the infrared light from a target [17]. Ten years ago, when
the CCO was first developed, only an array of 12 x 12 photodetectors could be used
to detect the infrared images of a target. Because of the availability of greatly im
proved CCOs, today an array of photodetectors, such as Indium Antimonide (InSb)
128 x 128, are used to form charge packets that are proportional to the light inten
sity of a target; and these packets are shifted to a detector point for detection, read
out, multiplexing, and time delay and integration (TDI). In scanned IR systems TDI
is one of the most important functions performed by CCOs. In such a system the
scene is mechanically scanned across an array of detector elements. By using CCO
columns to shift the detector output signals (in the form of charge packets) along the
focal plane with the same speed as the mechanical scan moves the scene across the
array, the signaltonoise ratio can be improved by the square root of the number of
detector elements in the TOI column.
Signal processing. The CCO can perform several analog and digital signal
processing functions, such as delay, multiplexing, demultiplexing, transversal
Chap. 6 References
261
filtering, recursive filtering, integration, analog memory, digital memory, and digi
tal logic. Thus CCDs are being used widely in special applications for the very large
scale integration (VLSI) circuits.
Example 662: Design of an NType ThreePhase SurfaceChannel CCD
The ntype threephase surfacechannel CCD has the following specifications:
Electron density:
Insulator relative dielectric constant:
Insulator thickness:
Insulator cross section:
Power dissipation allowable per bit:
N
max
= 2 X 1O
l2
cm
2
€i, = 3.9
d = 0.15 JLm
A = 0.5 X 10
4
cm
2
P = 0.67 mW
I MHz
a. Compute the insulator capacitance in farads per square centimeter.
b. Determine the maximum stored charges per well in coulombs.
c. Find the required applied gate voltage in volts.
d. Choose the clock frequency in megahertz.
Solution
a. The insulator capacitance is
_ €i _ 3.9 x 8.854 x 10
12
_ 23 F/ 2
C
i
 d  0.15 X 106  n cm
b. The maximum stored charges per well is
Qmax = NmaxqA = 2 X 10
12
x 1.6 X 10
19
x 0.5 X 10
4
= 16 pC
c. From Eq. (664) the required applied gate voltage is
Nmaxq 2 X 10
12
x 1.6 X 10
19
V    14V
8  c;  23 X 10
9
d. From Eq. (667) the clock frequency is
P 0.67 X 10
3
f = nVQmax = 3 x 14 x 16 x 10
12
REFERENCES
[I] SHOCKLEY, W., A unipolar "fieldeffect" transistor. Proc. IRE, 40, No. II, 13651376,
November 1952.
[2] SCHOTTKY, w., Naturwiss, 26, 843, (1938).
[3] MEAD, C. A., Schottky barrier gate fieldeffect transistor. Proc. IEEE, 54, No.2,
307308, February 1966.
262 Microwave FieldEffect Transistors Chap. 6
[4] HOOPER, W. W., et ai, An epitaxial GaAs fieldeffect transistor. Proc. IEEE, 55, No.7,
12371238, July 1967.
[5] VANDERZIEL, A. et aI., Gate noise in fieldeffect transistors at moderately high frequen
cies. Proc. IEEE, 51, No.3, 461467, March 1963.
[6] ZULEEG, R., and K. LEHOVEC, High frequency and temperature characteristics of GaAs
junction fieldeffect transistors in hot electron range. Proc. Symp. GaAs, Institute of
Physics Conf. Series No.9, 240245, 1970.
[7] LEHOVEC, K., and R. ZULEEG, Voltagecurrent characteristics of GaAs JFEr's in the
hot electron range. SolidState Electronics, Vol. 13,14151426. Pergamon Press, Lon
don, 1970.
[8] DINGLE, R., et aI., Electron mobilities in modulationdoped semiconductor heterojunc
tion superlattices. Appl. Phys. Letters, Vol. 33, 665667 (1978).
[9] ABE, M., et aI., Recent advance in ultralight speed HEMT technology. IEEE J. Quan
tum Electronics. QE22, No.9, 18701879, September 1986.
[10] TOGASHI, K., et aI., Reliability of lownoise microwave HEMTs made by MOCVD. Mi
crowave 1., 123132, April 1987.
[II] PAVLIDlS, D., and M. WEISS, The influence of device physical parameters on HEMT
largesignal characteristics. IEEE Trans. on Microwave Theory and Techniques, MTT
36, No.2, 239249, February 1988.
[12] SZE, S. M., Physics of Semiconductor Devices, 2nd ed., p. 440, John Wiley & Sons,
New York, 1981.
[13] PARRILLO, L. c., VLSI Process Integration in VLSI Technology. Chapter II, ed. S. M.
Sze. McGrawHill Book Company, New York, 1983.
[14] ASAI, S., Semiconductor memory trend. Proc. IEEE, 74, No. 12, 16231635, Decem
ber 1986.
[15] BOYLE, W. S., and G. E. SMITH, Charge couple semiconductor devices. Bell Syst. Tech.
J., 49,587593 (1977).
[16] BOYLE, W. S., and G. E. SMITH, Chargecoupled devicesa new approach to MIS
device structures. IEEE Spectrum, 8, No.7, 18027, July 1971.
[17] STECKL, A. J., et aI., Application of chargecoupled devices to infrared detection and
imaging. Proc. IEEE, 63, No. 1,6774, January 1975.
SUGGESTED READINGS
HESS, K., Advanced Theory of Semiconductor Devices. PrenticeHall, Inc., Englewood
Cliffs, N.J., 1988.
IEEE Transactions on Electron Devices. Special issues on microwave solidstate devices.
ED27, No.2, February 1980.
ED27, No.6, June 1980.
ED28, No.2, February 1981.
ED28, No.8, August 1981.
IEEE Transactions on Microwave Theory and Techniques. Special issues on microwave solid
state devices.
MTT21, No. 11, November 1973.
MTT24, No. 11, November 1976.
Chap. 6 Problems 263
MTT27, No.5, May 1979.
MTT·28, No. 12, December 1980.
MTT30, No.4, April 1982.
MTT·30, No. 10, October 1982.
LIAO, S. Y., Microwave SolidState Devices. PrenticeHall, Inc., Englewood Cliffs, N.J.,
1985.
LIAO, S. Y., Semiconductor Electronic Devices. PrenticeHall, Inc., Englewood Cliffs, N.J.,
1990.
NAvoN, D. H., Semiconductor Microdevices and Materials. Holt, Rinehart and Winston, New
York 1986.
PuLFREY, DAVID L., and N. GARRY TARR., Introduction to Microelectronic Devices. Prentice
Hall, Inc., Englewood Cliffs, N.J., 1989.
PROBLEMS
JFETs
61. A silicon JFEf has a gate length of 5 J1.m. Calculate the maximum frequency of oscil
lation for the device.
62. An nchannel silicon JFET has the following parameters:
Electron density:
Channel height:
Relative dielectric constant:
N
d
= 2 X 10
17
cm
3
a = 0.4 X 10
4
cm
E
r
= 11.8
Compute the pinchoff voltage.
63. An nchannel silicon JFEf at 300
0
K has the following parameters:
Electron density:
Hole density:
Dielectric constant:
Channel height:
Channel length:
Channel width:
Electron mobility:
Drain voltage:
Gate voltage:
N
d
= 5 X 10
17
cm
3
N
a
= 8 X 10
18
cm
3
E
r
= 11.8
a = 0.3 X 10
4
cm
L = 6 X 10
4
cm
Z = 45 X 10
4
cm
J1.n = 520 cm
2
/V·s
V
d
= 8 V
V. = 1 V
Compute:
a. The pinchoff voltage in volts
b. The pinchoff current in rnA
c. The builtin voltage in V
d. The drain current in rnA
e. The saturation drain current at V. = I V in rnA
f. The cutoff frequency in GHz
264
Microwave FieldEffect Transistors Chap. 6
64. An nchannel silicon JFET at 300° K has the following parameters:
Electron density:
Hole density:
Relative dielectric constant:
Channel height:
Channel length:
Channel width:
Drain voltage:
Gate voltage:
N
d
= 3 X 10
17
c m ~ 3
N
a
= 2 X 10
19
c m ~ 3
€, = 11.8
a = 0.5 X 10
4
cm
L = 10 X 10
4
cm
Z = 20 X 10
4
cm
V
d
= 7 V
V
R
=1.5V
Determine:
a. The electron mobility JLn
b. The pinchoff voltage in V
c. The pinchoff current in rnA
d. The drain current in rnA
e. The saturation current in rnA at V
R
= 0
f. The cutoff frequency in GHz
65. Verify Eq. (6117) from Eq. (6112).
66. Write a FORTRAN program to compute the drain current of an nchannel silicon
JFET. The device parameters are as follows:
Electron concentration:
Channel height:
Relative dielectric constant:
Channel length:
Channel width:
Drain voltage:
Gate voltage:
Saturation drift velocity:
The program specifications are
N
d
= 2 X 10
23
m
3
a = 0.2 X 10
6
m
€, = 11.8
L = 10 X 10
6
m
Z = 60 X 10
6
m
V
d
= 0 to 6 V
V
R
= 0 to 3 V
v, = 10
5
mls
1. The drain voltage V
d
varies from 0 to 6 volts with an increment of I volt per step
2. The gate voltage V
R
varies from 0 to 3 volts with a decrease of 0.5 volt per
step
3. The electron mobility JL varies from 0.9 to 0.3 m
2
/V's with a decrease of 0.1 per
step
4. Use FIO.5 format for numerical outputs and Hollerith format for character out
puts
5. Print the outputs in three columns for drain voltage V
d
(volts), gate voltage V
R
(volts), and drain current ld (rnA)
MESFETs
67. A MESFET has a gate width of 5 JLm. Calculate the maximum frequency of oscillation
for the device.
Chap. 6 Problems 265
68. A GaAs has a thickness of 0.40 JLm and a doping concentration N
d
of 5 x 10
17
cm
3
•
The relative dielectric constant E
r
of GaAs is 13.10. Calculate the pinchoff voltage in
volts.
69. An nchannel GaAs MESFEf at 300° K has the following parameters:
Donor density:
Relative dielectric constant:
Channel height:
Channel length:
Channel width:
Drain voltage:
Gate voltage:
Saturation drift velocity:
N
d
= 2 X 10
17
cm
3
E
r
= 13.10
a = 0.3 x 10
4
cm
L = 10 X 10
4
cm
Z = 50 X 10
4
cm
V
d
= 7 V
V
R
= 1.5 V
Us = 10
7
cmls
Compute:
3. The electron mobility (read from Fig. A2 in Appendix A)
b. The pinchoff voltage in V
c. The saturation current at V
g
= 0
d. The drain current ld in rnA
610. An nchannel GaAs MESFEf at 300° K has the following parameters:
Donor density:
Relative dielectric constant:
Channel height:
Channel length:
Channel width:
Drain voltage:
Gate voltage:
Saturation drift velocity:
N
d
= 3 X 10
17
cm
3
E
r
= 13.10
a = 0.5 x 10
4
cm
L = 8 X 10
4
cm
Z = 60 X 10
4
cm
V
d
= 6 V
V
R
= 2.0 V
Us = I x 10
7
cmls
Calculate:
3. The electron mobility (read from Fig. A2 in Appendix A)
b. The pinchoff voltage
c. The saturation current at V
R
= 0
d. The drain current ld in rnA
611. A certain nchannel GaAs MESFET has the following parameters:
Electron concentration:
Channel height:
Relative dielectric constant:
Channel length:
Channel width:
Electron mobility:
Drain voltage:
Gate voltage:
Saturation drift velocity:
N = 2.38 X 10
23
m
3
a = 0.2 JLm
E
r
= 13.10
L = IOJLm
Z = 60 JLm
JL = 0.3 m
2
1Y . s
V
d
, = 6 volts
V
g
= 3 volts
Us = 10
5
mls
266
Microwave FieldEffect Transistors
a. Calculate the pinchoff voltage.
b. Compute the velocity ratio.
c. Determine the saturation drain current at V
g
= O.
d. Find the drain current Id.
HEMTs
Chap. 6
612. Describe the structure of a HEMT and its fabrication processes.
613. Describe the operating principles of a HEMT.
614. A HEMT has the following parameters:
Gate width:
Electron velocity:
2D electrongas density:
W = 140 m
v(z) = 3 X 10
5
m/s
n(z) = 6 X 10
15
m
2
Compute the drain current of the HEMT.
615. A HEMT has the following parameters:
Gate width:
Electron velocity:
2D electrongas density:
W = 100 m
v(z) = 4 X 10
5
m/s
n(z) = 4 X 10
15
m
2
Calculate the drain current of the HEMT.
616. A HEMT has the following parameters:
Threshold voltage:
Donor concentration:
Metalsemiconductor
Schottky barrier potential:
AIGaAs dielectric constant:
Vrh = 0.15 V
N
d
= 3 X 10
24
m
3
ifims = 0.8 V
E, = 4.43
Compute:
a. The conductionbandedge difference between GaAs and AlGaAs
b. The sensitivity of the HEMT
617. A HEMT has the following parameters:
Threshold voltage:
Donor concentration:
AlGaAs dielectric constant:
Metalsemiconductor
Schottky barrier potential:
Vrh = 0.12 V
N
d
= 5 X 10
24
m
3
E, = 4.43
ifims = 0.8
Calculate:
a. The conductionbandedge difference between GaAs and AlGaAs
b. The sensitivity of the HEMT
618. Describe the applications of a HEMT.
Chap. 6 Problems
267
MOSFETs
619. A basic MOSFET is formed of AI metal, SiO
z
insulator, and Si semiconductor. The
insulator capacitance is 4 pF and the channel length Lis 12 JLm.
3. Determine the drain current ld sal in the saturation region with V,h = 2V and
V
gs
= 4V for the enhancement mode.
b. Compute the transconductance gm for the same mode.
c. Calculate the drain current ld sat in the saturation region with V,h = 1.5V and
V
gs
= OV for the depletion mode.
d. Find the transconductance gm for the depletion mode.
620. An AIOxideSi MOSFEf has an insulator capacitance of 3 pF and a channel length L
of 10 JLm. The gate voltage V
gs
is 10 V and the threshold voltage is 1.5 V.
3. Determine the carrier drift velocity in real case.
b. Calculate the drain current.
c. Compute the carrier transit time.
d. Find the maximum operating frequency in GHz.
621. The insulator SiO
z
in a Si MOSFEf has a relative dielectric constant Ejr of 11.8 and a
depth d of 0.08 JLm. The channel length L is 15 JLm and the channel depth Z is
150 1L m. Calculate the insulator capacitance Cn.
622. Compare the advantages and disadvantages of a GaAs MOSFEf with those of a Si
MOSFEf.
623. A certain p channel MOSFET has the following parameters:
Doping concentration:
Relative dielectric constant:
Insulator relative dielectric
constant:
Insulator thickness:
Operating temperature:
No = 2 X 10
17
cm
3
E
r
= 11.8
Eir = 4
d = 0.01 JLm
T = 320
0
K
3. Calculate the surface potential l/Js(inv) for strong inversion.
b. Compute the insulator capacitance.
c. Determine the threshold voltage.
624. A certain nchannel MOSFEf has the following parameters:
Channel length:
Channel depth:
Insulator thickness:
Gate voltage:
Threshold voltage:
Electron velocity:
Insulator relative dielectric
constant:
L = 5 JLm
Z = 10 JLm
d = 0.02 JLm
V
g
= 8 V
V,h = 1.5 V
V
s
= 2 X 10
7
cmls
E
r
= 4
3. Compute the insulator capacitance in mF/m
z
.
b. Calculate the saturation drain current in mAo
268 Microwave FieldEffect Transistors
c. Determine the saturation transconductance in millimhos.
d. Estimate the maximum saturation operating frequency in GHz.
Chap. 6
NMOS, CMOS, and Memory Devices
625. Describe the structures of NMOS, PMOS, and CMOS devices.
626. Explain the operational principles of the NMOS, PMOS, and CMOS devices.
627. Discuss the logicgate operations of NMOS, PMOS, and CMOS.
628. Describe the major memory devices.
CCDs
629. A chargecoupled device has 484 (or 22 x 22 array) elements each with a transfer
inefficiency of 10
4
and is clocked at a frequency of 100 KHz.
a. Determine the delay time between input and output.
b. Find the percentage of input charge appearing at the output terminal.
630. A surfacechannel CCD is operated by a gate voltage V
R
of 10 volts. The insulator has a
relative dielectric constant E
r
of 6 and a depth d of 0.1 JLm. Determine the stored
charge density on this MOS capacitor.
631. A Ptype surfacechannel CCD (AIOxideSi) has the following parameters:
No = 10
14
cm.1
<Pm' = 0.85 eV
Eir = 4
Qin = 10
8
C/cm
2
W = I f.Lm
d = 0.1 JLm
a. Determine the flatband potential.
b. Calculate the voltage across the insulator.
632. A threephase CCD has Qmax = 0.06 pC operating at a clock frequency of 20 MHz
with 10 volts applied. Determine the power dissipation per bit.
633. A threephase JCCD has a length L of 8 JLm, an electric field Ex of 480 V/cm, and an
electron mobility JLn of 1000 cm
2
/V . s. Calculate the signal carrier transit time.
634. An ntype threephase SCCD has the following parameters:
Insulator relative dielectric
constant:
Insulator thickness:
Insulator cross section:
Electron density:
Power dissipation allowable per bit:
Eir = 4
d = 0.3 JLm
A = 0.6 X 10
4
cm
2
N
max
= 4 X 10
12
cm
2
P = 0.8 mW
a. Compute the insulator capacitance in F/cm
2
•
b. Calculate the maximum stored charges per well in coulombs.
c. Find the required applied gate voltage in volts.
d. Choose the clock frequency in MHz.
Chapter 7
Transferred Electron
Devices (TEDs)
7·0 INTRODUCTION
The application of twoterminal semiconductor devices at microwave frequencies has
been increased usage during the past decades. The CW, average, and peak power
outputs of these devices at higher microwave frequencies are much larger than those
obtainable with the best power transistor. The common characteristic of all active
twoterminal solidstate devices is their negative resistance. The real part of their
impedance is negative over a range of frequencies. In a positive resistance the cur
rent through the resistance and the voltage across it are in phase. The voltage drop
across a positive resistance is positive and a power of (12 R) is dissipated in the resis
tance. In a negative resistance, however, the current and voltage are out of phase by
180°. The voltage drop across a negative resistance is negative, and a power of
([2 R) is generated by the power supply associated with the negative resistance. In
other words, positive resistances absorb power (passive devices), whereas negative
resistances generate power (active devices). In this chapter the transferred electron
devices (TEDs) are analyzed.
The differences between microwave transistors and transferred electron devices
(TEDs) are fundamental. Transistors operate with either junctions or gates, but
TEDs are bulk devices having no junctions or gates. The majority of transistors are
fabricated from elemental semiconductors, such as silicon or germanium, whereas
TEDs are fabricated from compound semiconductors, such as gallium arsenide
(GaAs), indium phosphide (InP), or cadmium telluride (CdTe). Transistors operate
with "warm" electrons whose energy is not much greater than the thermal energy
(0.026 eV at room temperature) of electrons in the semiconductor, whereas TEDs
269
270 Transferred Electron Devices (TEDs) Chap. 7
operate with "hot" electrons whose energy is very much greater than the thermal en
ergy. Because of these fundamental differences, the theory and technology of tran
sistors cannot be applied to TEDs.
7·1 GUNN·EFFECT DIODESGaAs DIODE
Gunneffect diodes are named after J. B. Gunn, who in 1963 discovered a periodic
fluctuations of current passing through the ntype gallium arsenide (GaAs) specimen
when the applied voltage exceeded a certain critical value. Two years later, in 1965,
B. C. DeLoach, R. C. Johnston, and B. G. Cohen discovered the impact ionization
avalanche transittime (IMPATT) mechanism in silicon, which employs the avalanch
ing and transittime properties of the diode to generate microwave frequencies. In
later years the limited spacechargeaccumulation diode (LSA diode) and the indium
phosphide diode (InP diode) were also successfully developed. These are bulk
devices in the sense that microwave amplification and oscillation are derived from
the bulk negativeresistance property of uniform semiconductors rather than from
the junction negativeresistance property between two different semiconductors, as
in the tunnel diode.
7·1·1 Background
After inventing the transistor, Shockley suggested in 1954 that twoterminal
negativeresistance devices using semiconductors may have advantages over transis
tors at high frequencies [1]. In 1961 Ridley and Watkins described a new method for
obtaining negative differential mobility in semiconductors [2]. The principle in
volved is to heat carriers in a lightmass, highmobility subband with an electric field
so that the carriers can transfer to a heavymass, lowmobility, higherenergy sub
band when they have a high enough temperature. Ridley and Watkins also mentioned
that GeSi alloys and some IIIV compounds may have suitable subband structures
in the conduction bands. Their theory for achieving negative differential mobility in
bulk semiconductors by transferring electrons from highmobility energy bands to
lowmobility energy bands was taken a step further by Hilsum in 1962 [3]. Hilsum
carefully calculated the transferred electron effect in several IIIV compounds and
was the first to use the terms transferred electron amplifiers (TEAs) and oscillators
(TEOs). He predicted accurately that a TEA bar of semiinsulating GaAs would be
operated at 373°K at a field of 3200 Vlcm. Hilsum's attempts to verify his theory ex
perimentally failed because the GaAs diode available to him at that time was not of
sufficiently high quality.
It was not until 1963 that J. B. Gunn of IBM discovered the socalled Gunn ef
fect from thin disks of ntype GaAs and ntype InP specimens while studying the
noise properties of semiconductors [4]. Gunn did not connectand even immedi
ately rejectedhis discoveries with the theories of Ridley, Watkins, and Hilsum. In
1963 Ridley predicted [5] that the field domain is continually moving down through
the crystal, disappearing at the anode and then reappearing at a favored nucleating
Sec. 7.1
GunnEffect DiodesGaAs Diode 271
center, and starting the whole cycle once more. Finally, Kraemer stated [6] that the
origin of the negative differential mobility is RidleyWatkinsHilsum's mechanism
of electron transfer into the satellite valleys that occur in the conduction bands of
both the ntype GaAs and the ntype InP and that the properties of the Gunn effect
are the current oscillations caused by the periodic nucleation and disappearance of
traveling spacecharge instability domains. Thus the correlation of theoretical pre
dictions and experimental discoveries completed the theory of transferred electron
devices (TEDs).
7·1·2 Gunn Effect
A schematic diagram of a uniform ntype GaAs diode with ohmic contacts at the
end surfaces is shown in Fig. 711. J. B. Gunn observed the Gunn effect in the
ntype GaAs bulk diode in 1963, an effect best explained by Gunn himself, who
published several papers about his observations [7 to 9]. He stated in his first paper
[7] that
Above some critical voltage, corresponding to an electric field of 20004000 voltslcm,
the current in every specimen became a fluctuating function of time. In the GaAs spec
imens, this fluctuation took the form of a periodic oscillation superimposed upon the
pulse current. ... The frequency of oscillation was determined mainly by the speci
men, and not by the external circuit. ... The period of oscillation was usually in
versely proportional to the specimen length and closely equal to the transit time of elec
trons between the electrodes, calculated from their estimated velocity of slightly over
10
7
cm/s . ... The peak pulse microwave power delivered by the GaAs specimens to a
matched load was measured. Value as high as 0.5 W at I Gels, and 0.15 W at 3 Gcls,
were found, corresponding to 12% of the pulse input power. *
Highfield domain
Figure 711 Schematic diagram for n
type GaAs diode.
+ Anode
+
+
+
+
/00 +
4 ~
""175Ilm1
~ __ v= 10
5
m/s
I ~      "
E
::L
o
N
Metaleoated
contact
Cathode 
*After J. B. Gunn [7]; reproduced by permission of IBM, Inc.
272 Transferred Electron Devices (TEDs) Chap. 7
From Gunn's observation the carrier drift velocity is linearly increased from
zero to a maximum when the electric field is varied from zero to a threshold value.
When the electric field is beyond the threshold value of 3000 Wcm for the ntype
GaAs, the drift velocity is decreased and the diode exhibits negative resistance. This
situation is shown in Fig. 712.
,
I
~
/J'P
~  Q o . ~ . 2 . .
)  ~     
f
_.
~
I
I
I
I
I
I
I
I
I
I I
I I I
~
'"
s
~
c
'u
0
..,
10
7
>
.:::
'C
Cl
o
o 5
10
Field (kV/cm)
IS 20
Figure 712 Drift velocity of electrons in ntype GaAs versus electric field.
(After J. B. Gunn [8J; reprinted by permission of IBM, Inc.)
The current fluctuations are shown in Fig. 713. The current waveform was
produced by applying a voltage pulse of 16V amplitude and lOns duration to a
specimen of ntype GaAs 2.5 X 10
3
cm in length. The oscillation frequency was
4.5 GHz. The lower trace had 2 ns/cm in the horizontal axis and 0.23 A/cm in the
vertical axis. The upper trace was the expanded view of the lower trace. Gunn found
that the period of these oscillations was equal to the transit time of the electrons
through the specimen calculated from the threshold current.
Figure 713 Current waveform of n
type GaAs reported by Gunn. (After
J. B. Gunn [8J; reprinted by permission
of IBM, Inc.)
Sec. 7.2 RidleyWatkinsHilsum (RWH) Theory 273
Gunn also discovered that the threshold electric field E
1h
varied with the length
and type of material. He developed an elaborate capacitive probe for plotting the
electric field distribution within a specimen of ntype GaAs of length L = 210 JLm
and crosssectional area 3.5 x 10
3
cm
2
with a lowfield resistance of 16 n. Current
instabilities occurred at specimen voltages above 59 V, which means that the
threshold field is
V 59
E
1h
= L= 210 X 1 O ~ 6 x 102 = 2810 volts/cm
7·2 RIDLEYWATKINSHILSUM (RWH) THEORY
(711)
Many explanations have been offered for the Gunn effect. In 1964 Kroemer [6] sug
gested that Gunn's observations were in complete agreement with the Ridley
WatkinsHilsum (RWH) theory.
7·2·1 Differential Negative Resistance
The fundamental concept of the RidleyWatkinsHilsum (RWH) theory is the differ
ential negative resistance developed in a bulk solidstate IIIV compound when either
a voltage (or electric field) or a current is applied to the terminals of the sample.
There are two modes of negativeresistance devices: voltagecontrolled and current
controlled modes as shown in Fig. 721(a) and (b), respectively [5].
J
o
J
o L
(a) Voltagecontrolled mode (b) Currentcontrolled mode
Figure 721 Diagram of negative resistance. (From B. K. Ridley [5]; reprinted
by permission of the Institute of Physics.)
In the voltagecontrolled mode the current density can be multivalued,
whereas in the currentcontrolled mode the voltage can be multivalued. The major
effect of the appearance of a differential negativeresistance region in the current
densityfield curve is to render the sample electrically unstable. As a result, the ini
tially homogeneous sample becomes electrically heterogeneous in an attempt to
reach stability. In the voltagecontrolled negativeresistance mode highfield do
mains are formed, separating two lowfield regions. The interfaces separating low
and highfield domains lie along equipotentials; thus they are in planes perpendicular
to the current direction as shown in Fig. 722(a). In the currentcontrolled
negativeresistance mode splitting the sample results in highcurrent filaments run
ning along the field direction as shown in Fig. 722(b).
274 Transferred Electron Devices (TEDs) Chap. 7
High field
Low field
(a) Highfield domain
High current
4",,,m7,,,nm1
Low current
(b) Highcurrent filament
(721)
Figure 722 Diagrams of high field domain and high current filament. (From
B. K. Ridley [5]; reprinted by permission of the Institute of Physics.)
Expressed mathematically, the negative resistance of the sample at a particular
region is
dl dJ . .
dV = dE = negahve resIstance
If an electric field Eo (or voltage V
o
) is applied to the sample, for example, the
current density J
o
is generated. As the applied field (or voltage) is increased to E
2
(or
V
2
), the current density is decreased to J
2
• When the field (or voltage) is decreased
to E
1
(or VI)' the current density is increased to J
1
• These phenomena of the voltage
controlled negative resistance are shown in Fig. 723(a). Similarly, for the current
controlled mode, the negativeresistance profile is as shown in Fig. 723(b).
o
E
1
Eo E
2
(a) Voltagecontrolled mode
E
(b) Currentcontrolled mode
Figure 723 Multiple values of current density for negative resistance. (From
B. K. Ridley [5]; reprinted by permission of the Institute of Physics.)
722 TwoValley Model Theory
A few years before the Gunn effect was discovered, Kraemer proposed a negative
mass microwave amplifier in 1958 [10] and 1959 [11]. According to the energy band
theory of the ntype GaAs, a highmobility lower valley is separated by an energy of
0.36 eV from a lowmobility upper valley as shown in Fig. 724. Table 721 lists
Sec. 7.2 RidleyWatkinsHilsum (RWH) Theory
Upper valky
275
Lower valley
t } Forbidden
F
x
= 1.43 eV band
+'< 100 >
A. K
! ! . ~ . . . } V ~ : ~ , ~ "
Figure 724 Twovalley model of
electron energy versus wave number for
ntype GaAs.
TABLE 7·2·1 DATA FOR TWO VALLEYS IN GaAs
Valley
Lower
Upper
Effective Mass
Me
Met = 0.068
M
eu
= 1.2
Mobility
IL
ILl = 8000 cm
2
/Vsec
ILu = 180 cm
2
1Ysec
Separation
aE
aE = 0.36 eV
aE = 0.36 eV
the data for the two valleys in the ntype GaAs and Table 722 shows the data for
twovalley semiconductors.
Electron densities in the lower and upper valleys remain the same under an
equilibrium condition. When the applied electric field is lower than the electric field
of the lower valley (E < E
e
), no electrons will transfer to the upper valley as shown
in Fig. 725(a). When the applied electric field is higher than that of the lower val
ley and lower than that of the upper valley (E
e
< E < E
u
), electrons will begin to
transfer to the upper valley as shown in Fig. 725(b). And when the applied electric
TABLE 7·2·2 DATA FOR TWOVALLEY SEMICONDUCTORS
Gap energy Separation energy Threshold
(at 300
0
K) between two valleys field Peak velocity
Semiconductor E.(eV) aE(eV) Eth(KYlcm) v
p
(l07 cm/s)
Ge 0.80 0.18 2.3 1.4
GaAs 1.43 0.36 3.2 2.2
InP 1.33 0.60 10.5 2.5
0.80
CdTe 1.44 0.51 13.0 1.5
InAs 0.33 1.28 1.60 3.6
InSb 0.16 0.41 0.6 5.0
Note: InP is a threevalley semiconductor: 0.60 eV is the separation energy between the middle and
lower valleys. 0.8 eV that between the upper and lower valleys.
276 Transferred Electron Devices (TEDs) Chap. 7
K
\... :/
~
V
'...1/·· U
o W o ~   _
o K 0
K
v
W
··
•••
••
00
(a) E < t ~
Figure 725 Transfer of electron densities.
field is higher than that of the upper valley (E
u
< E), all electrons will transfer to the
upper valley as shown in Fig. 725(c).
If electron densities in the lower and upper valleys are ne and n
u
, the conduc
tivity of the ntype GaAs is
(722)
where e = the electron charge
J.L =the electron mobility
n =ne + n
u
is the electron density
Example 721: Conductivity of an nType GaAs Gunn Diode
Electron density:
Electron density at lower valley:
Electron density at upper valley:
Temperature:
n = 10
18
cm
3
ne = 10
10
cm
3
n
u
= 10
8
cm
3
T = 300
0
K
Determine the conductivity of the diode.
Solution From Eq. (722) the conductivity is
(T = e(ftene + ftunu)
= 1.6 x 10
19
(8000 x 10
4
x 10
16
+ 180 X 10
4
x 10
14
)
= 1.6 X 10
19
x 8000 X 10
4
x 10
16
for ne ~ n
u
= 1.28 mmhos
When a sufficiently high field E is applied to the specimen, electrons are accel
erated and their effective temperature rises above the lattice temperature. Further
more, the lattice temperature also increases. Thus electron density n and mobility J.L
are both functions of electric field E. Differentiation of Eq. (722) with respect to E
yields
(723)
Sec. 7.2 RidleyWatkinsHilsum (RWH) Theory 277
If the total electron density is given by n = nf + n
u
and it is assumed that fJf and fJu
are proportional to EP, where p is a constant, then
d dn
 (nf + n ) =  = 0
dE u dE
(724)
dnf
dE
dn
u
dE
(725)
and
dfJ d£P £P fJ P
 ex  = pEPI = p ex p = fJ
dE dE E E E
(726)
Substitution of Eqs. (724) to (726) into Eq. (723) results in
da dnf p
dE = e(fJf  fJu) dE + e(nffJf + nufJu)"i;
Then differentiation of Ohm's law J = aE with respect to E yields
dJ da
= a +E
dE dE
(727)
(728)
Equation (728) can be rewritten
1 dJ
adE
I + da/dE
alE
(729)
(7210)
(7211)
Clearly, for negative resistance, the current density i must decrease with increasing
field E or the ratio of dildE must be negative. Such would be the case only if the
righthand term of Eq. (729) is less than zero. In other words, the condition for
negative resistance is
_ da/dE > 1
alE
Substitution of Eqs. (722) and (727) withf = nu/nf results in [2]
[(;f : ::f) ( ~ ; ) p] > 1
Note that the field exponent p is a function of the scattering mechanism and
should be negative and large. This factor makes impurity scattering quite undesirable
because when it is dominant, the mobility rises with an increasing field and thus p is
positive. When lattice scattering is dominant, however, p is negative and must de
pend on the lattice and carrier temperature. The first bracket in Eq. (7211) must be
positive in order to satisfy unequality. This means that fJf > fJu' Electrons must be
gin in a lowmass valley and transfer to a highmass valley when they are heated by
the electric field. The maximum value of this term is unitythat is, fJe ~ fJu' The
factor dntldE in the second bracket must be negative. This quantity represents the
rate of the carrier density with field at which electrons transfer to the upper valley;
this rate depends on differences between electron densities, electron temperature,
and gap energies in the two valleys.
278 Transferred Electron Devices (TEDs) Chap. 7
Negative resistance region
I
...,
~
I
th
';;;
"
"
"0
C
t
Iv
;;l
u
On the basis of the RidleyWatkinsHilsum theory as described earlier, the
band structure of a semiconductor must satisfy three criteria in order to exhibit nega
tive resistance [12].
1. The separation energy between the bottom of the lower valley and the bottom
of the upper valley must be several times larger than the thermal energy (about
0.026 eV) at room temperature. This means that liE > kT or liE > 0.026 eY.
2. The separation energy between the valleys must be smaller than the gap energy
between the conduction and valence bands. This means that liE < E
g
• Other
wise the semiconductor will break down and become highly conductive before
the electrons begin to transfer to the upper valleys because holeelectron pair
formation is created.
3. Electrons in the lower valley must have high mobility, small effective mass,
and a low density of state, whereas those in the upper valley must have low
mobility, large effective mass, and a high density of state. In other words,
electron velocities (dEl dk) must be much larger in the lower valleys than in the
upper valleys.
The two most useful semiconductorssilicon and germaniumdo not meet
all these criteria. Some compound semiconductors, such as gallium arsenide
(GaAs), indium phosphide (InP) , and cadmium telluride (CdTe) do satisfy these
criteria. Others such as indium arsenide (InAs), gallium phosphide (GaP), and in
dium antimonide (inSb) do not. Figure 726 shows a possible current versus field
characteristic of a twovalley semiconductor.
V Original bulk resistance value
I
I
...,
Ultimate bulk
resistance
~  L . . J          , l ,   ~          E
E, E
th
E
v
E
u
Electric field E
Figure 726 Current versus field char
acteristic of a twovalley semiconductor.
A mathematical analysis of differential negative resistance requires a detailed
analysis of highfield carrier transports [1314]. From electric field theory the mag
nitude of the current density in a semiconductor is given by
where q =electric charge
n =electron density, and
v =average electron velocity.
J = qnv (7212)
Sec. 7.2 RidleyWatkinsHilsum (RWH) Theory
279
I
I
/11,
I
/
f:.
,
I
I
I
I
I I
I :

I I _,
:: _. :
i 1
......, I
E, E
th
E
u
E
u
Electric field E (kV/cm)
Figure 727 Electron drift velocity versus electric field.
Differentiation of Eg. (7212) with respect to electric field E yields
dJ dv
dE = qn dE (7213)
The condition for negative differential conductance may then be written
dVd
dE = ftn < 0 (7214)
where ftn denotes the negative mobility, which is shown in Fig. 727.
The direct measurement of the dependence of drift velocity on the electric field
and direct evidence for the existence of the negative differential mobility were made
by Ruch and Kino [15]. Experimental results, along with the theoretical results of
analysis by Butcher and Fawcett [13], are shown in Fig. 728.
6 7 8 9 10 11 2 3 4 5
7
V
kExperiment
;
r::"
/

/
Theory
I
o
o
'"
E 2 X 10
7
C
'u
o
1 X 10
7
Ci
3 x 10
Electric field (kVfcm)
Figure 728 Theoretical and experimental velocityfield characteristics of a GaAs
diode.
280 Transferred Electron Devices (TEDs) Chap. 7
Example 722: Characteristics of a GaAs Gunn Diode
A typical ntype GaAs Gunn diode has the following parameters:
Threshold field
Applied field
Device length
Doping concentration
Operating frequency
E
th
= 2800 Vlcm
E = 3200 Vlcm
L = 10 fLm
no = 2 x 10
14
cm
3
f = 10 GHz
a. Compute the electron drift velocity.
b. Calculate the current density.
c. Estimate the negative electron mobility.
Solution
a. The electron drift velocity is
Vd = 10 X 10
9
X 10 X 10
6
= 10
5
m/sec = 10
7
cm/sec
b. From Eq. (7212) the current density is
J = qnv = 1.6 x 10
19
x 2 X 10
20
X 10 X 10
9
X 10
5
= 3.2 X 10
6
A/m
2
= 320 A/cm
2
c. The negative electron mobility is
Vd 10
7
fLn =  =  = 3Ioocm
2
/V'sec
E 3200
723 HighField Domain
In the last section we described how differential resistance can occur when an elec
tric field of a certain range is applied to a multivalley semiconductor compound,
such as the ntype GaAs. In this section we demonstrate how a decrease in drift ve
locity with increasing electric field can lead to the formation of a highfield domain
for microwave generation and amplification.
In the ntype GaAs diode the majority carriers are electrons. When a small
voltage is applied to the diode, the electric field and conduction current density are
uniform throughout the diode. At low voltage the GaAs is ohmic, since the drift ve
locity of the electrons is proportional to the electric field. This situation was shown
in Fig. 712. The conduction current density in the diode is given by
aV
J = aE
x
= TUx = pvxUx (7215)
where J = conduction current density
a = conductivity
Ex = electric field in the x direction
Sec. 7.2 RidleyWatkinsHilsum (RWH) Theory
281
L = length of the diode
V = applied voltage
p = charge density
v = drift velocity
U = unit vector
The current is carried by free electrons that are drifting through a background
of fixed positive charge. The positive charge, which is due to impurity atoms that
have donated an electron (donors), is sometimes reduced by impurity atoms that
have accepted an electron (acceptors). As long as the fixed charge is positive, the
semiconductor is n type, since the principal carriers are the negative charges. The
density of donors less the density of acceptors is termed doping. When the space
charge is zero, the carrier densi ty is equal to the doping.
When the applied voltage is above the threshold value, which was measured at
about 3000 V/cm times the thickness of the GaAs diode, a highfield domain is
formed near the cathode that reduces the electric field in the rest of the material and
causes the current to drop to about twothirds of its maximum value. This situation
occurs because the applied voltage is given by
V =  f Ex dx (7216)
o
For a constant voltage V an increase in the electric field within the specimen must be
accompanied by a decrease in the electric field in the rest of the diode. The high
field domain then drifts with the carrier stream across the electrodes and disappears
at the anode contact. When the electric field increases, the electron drift velocity de
creases and the GaAs exhibits negative resistance.
Specifically, it is assumed that at point A on the JE plot as shown in Fig.
729(b) there exists an excess (or accumulation) of negative charge that could be
caused by a random noise fluctuation or possibly by a permanent nonuniformity in
doping in the ntype GaAs diode. An electric field is then created by the accumu
lated charges as shown in Fig. 729(d). The field to the left of point A is lower than
that to the right. If the diode is biased at point E
A
on the JE curve, this situation im
plies that the carriers (or current) flowing into point A are greater than those flowing
out of point A, thereby increasing the excess negative space charge at A. Further
more, when the electric field to the left of point A is lower than it was before, the
field to the right is then greater than the original one, resulting in an even greater
spacecharge accumulation. This process continues until the low and high fields both
reach values outside the differential negativeresistance region and settle at points 1
and 2 in Fig. 729(a) where the currents in the two field regions are equal. As a re
sult of this process, a traveling spacecharge accumulation is formed. This process,
of course, depends on the condition that the number of electrons inside the crystal is
large enough to allow the necessary amount of space charge to be built up during the
transit time of the spacecharge layer.
The pure accumulation layer discussed above is the simplest form of space
charge instability. When positive and negative charges are separated by a small dis
tance, then a dipole domain is formed as shown in Fig. 7210. The electric field in
282
J
(a)
A
Transferred Electron Devices (TEDs) Chap. 7
~ ~ ,If+
\" L ~ ~        I
(b)
(c)
E
0
,
0 L
x
V
(E
1
)
(d)
Accumulation layer
.....:.
i ~
formation completed
I
'1 I
I
Initial state
Figure 729 Formation of an electron
I
o '3>'2>'1
accumulation layer in GaAs. (After H.
0 A L
x
Kroemer [16J; reprinted by permission of
(e)
IEEE. Inc.)
side the dipole domain would be greater than the fields on either side of the dipole in
Fig. 721O(c). Because of the negative differential resistance, the current in the
lowfield side would be greater than that in the highfield side. The two field values
will tend toward equilibrium conditions outside the differential negativeresistance
region, where the low and high currents are the same as described in the previous
section. Then the dipole field reaches a stable condition and moves through the spec
imen toward the anode. When the highfield domain disappears at the anode, a new
dipole field starts forming at the cathode and the process is repeated.
Figure 7·2·10 Formation of an elec
tron dipole layer in GaAs. (After H.
Kraemer [i6J; reprinted by permission of
iEEE, inc.)
x
L
O'__+_! ~ I I l . . . . _ __
o j d 1 __
(d)
In general, the highfield domain has the following properties [12]:
1. A domain will start to form whenever the electric field in a region of the sam
ple increases above the threshold electric field and will drift with the carrier
stream through the device. When the electric field increases, the electron drift
velocity decreases and the GaAs diode exhibits negative resistance.
2. If additional voltage is applied to a device containing a domain, the domain
will increase in size and absorb more voltage than was added and the current
will decrease.
3. A domain will not disappear before reaching the anode unless the voltage is
dropped appreciably below threshold (for a diode with uniform doping and
area).
284 Transferred Electron Devices (TEDs)
Chap. 7
4. The formation of a new domain can be prevented by decreasing the voltage
slightly below threshold (in a nonresonant circuit).
5. A domain will modulate the current through a device as the domain passes
through regions of different doping and crosssectional area, or the domain
may disappear. The effective doping may be varied in regions along the drift
path by additional contacts.
6. The domain's length is generally inversely proportional to the doping; thus
devices with the same product of doping multiplied by length will behave simi
larly in terms of frequency multiplied by length, voltage/length, and
efficiency.
7. As a domain passes a point in the device, the domain can be detected by a ca
pacitive contact, since the voltage changes suddenly as the domain passes. The
presence of a domain anywhere in a device can be detected by a decreased
current or by a change in differential impedance.
It should be noted that properties 3 and 6 are valid only when the length of the
domain is much longer than the thermal diffusion length for carriers, which for
GaAs is about 1 JLm for a doping of 10
16
per cubic centimeter and about 10 JLm for
a doping of 10
14
per cubic centimeter.
7·3 MODES OF OPERATION
Since Gunn first announced his observation of microwave oscillation in the ntype
GaAs and ntype InP diodes in 1963, various modes of operation have been devel
oped, depending on the material parameters and operating conditions. As noted, the
formation of a strong spacecharge instability depends on the conditions that enough
charge is available in the crystal and that the specimen is long enough so that the
necessary amount of space charge can be built up within the transit time of the elec
trons. This requirement sets up a criterion for the various modes of operation of bulk
negativedifferentialresistance devices. Copeland proposed four basic modes of op
eration of uniformly doped bulk diodes with lowresistance contacts [17] as shown
in Fig. 731.
1. Gunn oscillation mode: This mode is defined in the region where the product of
frequency multiplied by length is about 10
7
cm/s and the product of doping
multiplied by length is greater than 10
12
/cm
2
• In this region the device is un
stable because of the cyclic formation of either the accumulation layer or the
highfield domain. In a circuit with relatively low impedance the device oper
ates in the highfield domain mode and the frequency of oscillation is near the
intrinsic frequency. When the device is operated in a relatively highQ cavity
and coupled properly to the load, the domain is quenched or delayed (or both)
before nucleating. In this case, the oscillation frequency is almost entirely de
termined by the resonant frequency of the cavity and has a value of several
times the intrinsic frequency.
Sec. 7.3 Modes of Operation 285
10
14
C;UNN
Transittime
domain
Delayed domain
10
13
/
/// Quenched dornain
/
/
/
/
/
/
__L _
10
12
~
v;
E
~
.s
eo
"
>,
u
"
10
7
'"
::l
CJ'
~
,
t::,
noLdoping x length (cm
2
)
Figure 731 Modes of operation for Gunn diodes. (After J. A. Copeland [17];
reprinted by permission of IEEE. Inc.)
2. Stable amplification mode: This mode is defined in the region where the
product of frequency times length is about 10
7
cm/s and the product of doping
times length is between 1011 and 10
12
/cm
2
•
3. LSA oscillation mode: This mode is defined in the region where the product of
frequency times length is above 10
7
cm/s and the quotient of doping divided by
frequency is between 2 x 10
4
and 2 x 10
5
•
4. Biascircuit oscillation mode: This mode occurs only when there is either Gunn
or LSA oscillation, and it is usually at the region where the product of fre
quency times length is too small to appear in the figure. When a bulk diode is
biased to threshold, the average current suddenly drops as Gunn oscillation be
gins. The drop in current at the threshold can lead to oscillations in the bias
circuit that are typically 1 kHz to 100 MHz [18].
The first three modes are discussed in detail in this section. Before doing so, how
ever, let us consider the criterion for classifying the modes of operation.
7·3·1 Criterion for Classifying the Modes
of Operation
The Gunneffect diodes are basically made from an ntype GaAs, with the concen
trations of free electrons ranging from 10
14
to 10
17
per cubic centimeter at room tem
perature. Its typical dimensions are 150 x 150 JLm in cross section and 30 JLm
long. During the early stages of spacecharge accumulation, the time rate of growth
286
Transferred Electron Devices (TEDs)
Chap. 7
of the spacecharge layers is given by
Q(X, t) = Q(X  vt, 0) exp (;J (731)
where Td = ! = i I is the magnitude of the negative dielectric relaxation time
a ef!{) JLn
€ = semiconductor dielectric permittivity
no = doping concentration
JLn = negative mobility
e = electron charge
a = conductivity
Figure 732 clarifies Eg. (731).
Cathode
Q(x ~ vt. 0) Q(x, tl
Anode
I
I
I
I
I
I
VI
I
k   ~ ~   + + L     _ ~
II II
II II
II I!
x=O t=O t
1_. x
Figure 732 Spacecharge accumula
tion with a velocity of v.
(732)
If Eg. (731) remains valid throughout the entire transit time of the space
charge layer, the factor of maximum growth is given by
Q(L, L/v) ( L ) (Lnoe11ln I)
Growth factor = = exp  = exp r
Q(O, 0) VTd €V
In Eg. (732) the layer is assumed to start at the cathode at t = 0, X = 0, and ar
rive at the anode at t = L/v and X = L. For a large spacecharge growth, this fac
tor must be larger than unity. This means that
€V
noL > ,I (733)
e JLn
This is the criterion for classifying the modes of operation for the Gunneffect
diodes. For ntype GaAs, the value of €v/(el JLn I) is about 1012jcm
2
, where IJLn I is
assumed to be 150 cm
2
jV . s.
Example 731: Criterion of Mode Operation
An ntype GaAs Gunn diode has the following parameters:
Electron drift velocity:
Negative electron mobility:
Relative dielectric constant:
Vd = 2.5 X 10
5
m/s
IfLn I = 0.015 m
2
1Y . S
E
r
= 13.1
Determine the criterion for classifying the modes of operation.
Sec. 7.3 Modes of Operation
287
Solution From Eg. (733) the criterion is
EVd 8.854 X 10
12
x 13.1 x 2.5 x 10
5
elJLnl = 1.6 x 10
19
x 0.D15
= 1.19 x 10
16
/m
2
= 1.19 x 10
12
/cm
2
This means that the product of the doping concentration and the device length must be
noL > 1.19 x 10
12
/cm
2
Most Gunneffect diodes have the product of doping and length (noL) greater than
10
12
/cm
2
• However, the mode that Gunn himself observed had a product noL that is
much less. When the product of noL is greater than 10
12
/cm
2
in GaAs, the space
charge perturbations in the specimen increase exponentially in space and time in ac
cordance with Eq. (731). Thus a highfield domain is formed and moves from the
cathode to the anode as described earlier. The frequency of oscillation is given by
the relation [19]
f = VOOm
L
err
(734)
where Vdom is the domain velocity and L
err
is the effective length that the domain
travels from the time it is formed until the time that a new domain begins to form.
Gunn described the behavior of Gunn oscillators under several circuit
configurations [20]. When the circuit is mainly resistive or the voltage across the
diode is constant, the period of oscillation is the time required for the domain to
drift from the cathode to the anode. This mode is not actually typical of microwave
applications. Negative conductivity devices are usually operated in resonant cirCUits,
such as highQ resonant microwave cavities. When the diode is in a resonant circuit,
the frequency can be tuned to a range of about an octave without loss of efficiency
[21].
As described previously, the normal Gunn domain mode (or Gunn oscillation
mode) is operated with the electric field greater than the threshold field (E > E
th
).
The highfield domain drifts along the specimen until it reaches the anode or until
the lowfield value drops below the sustaining field E
s
required to maintain V
s
as
shown in Fig. 733. The sustaining drift velocity for GaAs is V
s
= 10
7
cm/s. Since
the electron drift velocity v varies with the electric field, there are three possible do
main modes for the Gunn oscillation mode.
Transittime domain mode (fL = 10
7
cm/s). When the electron drift velocity
Vd is equal to the sustaining velocity V
s
, the highfield domain is stable. In other
words, the electron drift velocity is given by
Vd = V
s
= fL = 10
7
cm/s (735)
Then the oscillation period is equal to the transit timethat is, To = T,. This situa
tion is shown in Fig. 734(a). The efficiency is below 10% because the current is
collected only when the domain arrives at the anode.
288
Transferred Electron Devices (TEDs) Chap. 7
E
OL.J..._.....L... _
o E
s
E
1h
Electric field E
Figure 733 Electron drift velocity
versus electric field.
1:',,,
I:',
,. F,,,
   1:',
T,
I
I
,
,
,
I
T,
,....1rjde bias
r+!rde bias
'   4   ~  _ _ _ j        de hlas
'+11141 de hias
0C;;h__
o
1:.. "
",'  1:',
0..."... +' 0
o
v
v
(b) IklaYl'd Ilwl!l'
Til> T
r
(e) ()uclll'ill'l! IllOdc
Tn < T,
(a) Trallsit·tillll' IllOlk
Til = T,
td) LSA 1ll00k
Til < 7{
Til = 3Td
Figure 734 Gunn domain modes.
Sec. 7.3 Modes of Operation 289
Delayed domain mode (10
6
cm/s < fL < 10
7
cm/s). When the transit time is
chosen so that the domain is collected while E < E
th
as shown in Fig. 734(b), a
new domain cannot form until the field rises above threshold again. In this case, the
oscillation period is greater than the transit timethat is, To > T
1
• This delayed
mode is also called inhibited mode. The efficiency of this mode is about 20%.
Quenched domain mode (fL > 2 X 10
7
cm/s). If the bias field drops below
the sustaining field E
s
during the negative halfcycle as shown in Fig. 734(c), the
domain collapses before it reaches the anode. When the bias field swings back above
threshold, a new domain is nucleated and the process repeats. Therefore the oscilla
tions occur at the frequency of the resonant circuit rather than at the transittime fre
quency. It has been found that the resonant frequency of the circuit is several times
the transittime frequency, since one dipole does not have enough time to readjust
and absorb the voltage of the other dipoles [22, 23]. Theoretically, the efficiency of
quenched domain oscillators can reach 13% [22].
733 LimitedSpaceCharge Accumulation (LSA)
Mode (IL > 2 X 10
7
em/s)
When the frequency is very high, the domains do not have sufficient time to form
while the field is above threshold. As a result, most of the domains are maintained
in the negative conductance state during a large fraction of the voltage cycle. Any
accumulation of electrons near the cathode has time to collapse while the signal is
below threshold. Thus the LSA mode is the simplest mode of operation, and it con
sists of a uniformly doped semiconductor without any internal space charges. In this
instance, the internal electric field would be uniform and proportional to the applied
voltage. The current in the device is then proportional to the drift velocity at this
field level. The efficiency of the LSA mode can reach 20%.
The oscillation period To should be no more than several times larger than the
magnitude of the dielectric relaxation time in the negative conductance region Td.
The oscillation indicated in Fig. 734(d) is To = 3Td. It is appropriate here to define
the LSA boundaries. As described earlier, the sustaining drift velocity is 10
7
cm/s as
shown in Eq. (735) and Fig. 733. For the ntype GaAs, the product of doping
and length (noL) is about 1O
'2
/cm
2
. At the lowfrequency limit, the drift velocity is
taken to be
Ve = fL = 5 x 10
6
cm/s
The ratio of noL to fL yields
n
O
=2x10
5
f
At the upperfrequency limit it is assumed that the drift velocity is
V
u
= fL = 5 x 10
7
cm/s
and the ratio of noL to fL is
(736)
(737)
(738)
(739)
290
Transferred Electron Devices (TEDs) Chap. 7
Both the upper and lower boundaries of the LSA mode are indicated in Fig. 731.
The LSA mode is discussed further in Section 74.
7·3·4 Stable Amplification Mode (no L < 10
'2
/cm
2
)
When the noL product of the device is less than about 1012/cm2, the device exhibits
amplification at the transittime frequency rather than spontaneous oscillation. This
situation occurs because the negative conductance is utilized without domain forma
tion. There are too few carriers for domain formation within the transit time. There
fore amplification of signals near the transittime frequency can be accomplished.
This mode was first observed by Thim and Barber [23]. Furthermore, Uenohara
showed that there are types of amplification depending on the fL product of the
device [24] as shown in Fig. 735.
10
14
10
13
no
T = 2 x 10
5
Quenched
d d ~ ' l ~ d
domain
" " ' ' 0 . ' ' ' ~ ' ' ' ' (Highfield domain)
Gunn
10
12
First amplification 
Relaxation oscillation
I
I
I
en 10
8
Tlh'«l,mpl,fi""o. i
E
u
no LCarrier concentration x length (cm 2)
Figure 735 Mode chart. (After M. Uenohara [24]; reprinted by permission of
McGrawHill Book Company.)
The various modes of operation of Gunn diodes can be classified on the basis
of the times in which various processes occur. These times are defined as follows:
T, = domain transit time
Td = dielectric relaxation time at low field
TI? = domain growth time
To = natural period of oscillation of a highQ external electric circuit
The modes described previously are summarized in Table 731.
Sec. 7.4
LSA Diodes 291
TABLE 7·3·1 MODES OF OPERATION OF GUNN OSCILLATORS
Mode Time relationship Doping level
Stable amplifier To ~ T, noL < 10
'2
Gun domain Tl( ~ T, Il;,L > 10
'2
To = T
r
Quenched domain Tl( ~ T, noL > 10
'2
To = T,
Delayed domain Tf( $ T, noL > 10
'2
To> T
t
LSA To < T,
2 X 10
4
< (7) < 2 X 10
5
To> Td
Nature of circuit
Nonresonant
Nonresonant;
constant voltage
Resonant;
finite impedance
Resonant;
finite impedance
Multiple resonances;
high impedance;
high dc bias
7·4 LSA DIODES
(741)
1
/0 =
To
The abbreviation LSA stands for the limited spacecharge accumulation mode of the
Gunn diode. As described previously, if the product noL is larger than 10
12
/cm
2
and
if the ratio of doping no to frequency / is within 2 x 10
5
to 2 X 10
4
s/cm3, the high
field domains and the spacecharge layers do not have sufficient time to build up.
The magnitude of the RF voltage must be large enough to drive the diode below
threshold during each cycle in order to dissipate space charge. Also, the portion of
each cycle during which the RF voltage is above threshold must be short enough to
prevent the domain formation and the spacecharge accumulation. Only the primary
accumulation layer forms near the cathode; the rest of the sample remains fairly ho
mogeneous. Thus with limited spacecharge formation the remainder of the sample
appears as a series negative resistance that increases the frequency of the oscillations
in the resonant circuit. Copeland discovered the LSA mode of the Gunn diode in
1966 [25]. In the LSA mode the diode is placed in a resonator tuned to an oscillation
frequency of
The device is biased to several times the threshold voltage (see Fig. 741).
As the RF voltage swings beyond the threshold, the space charge starts build
ing up at the cathode. Since the oscillation period To of the RF signal is less than the
domaingrowth time constant T
g
, the total voltage swings below the threshold before
the domain can form. Furthermore, since To is much greater than the dielectric re
laxation time Td, the accumulated space charge is drained in a very small fraction of
the RF cycle. Therefore the device spends most of the RF cycle in the negativeresis
tance region, and the space charge is not allowed to build up. The frequency of os
cillation in the LSA mode is independent of the transit time of the carriers and is de
termined solely by the circuit external to the device. Also, the powerimpedance
product does not fall off as 1//'6; thus the output power in the LSA mode can be
greater than that in the other modes.
The LSA mode does have limitations. It is very sensitive to load conditions,
temperatures, and doping fluctuations [26]. In addition, the RF circuit must allow
the field to build up quickly in order to prevent domain formation. The power output
292 Transferred Electron Devices (TEDs) Chap. 7
/
V
d
I
IJ.Q = E
~
V
d
'"
E
lJ. u = E /'
~
 /'
 ."
"
C
'r;
0
.;
>
.:::
dV
d 'I:
Cl IJ. n = dE
E
E
th
E
b
Electric field
..
"
E
f.=
dc bias
Figure 741 LSA mode operation,
of an LSA oscillator can be simply written
P = r,Vol
o
= r,(MEthL)(noevoA) (742)
where r, =dctoRF conversion efficiency (primarily a function of material and
circuit considerations)
V
o
=operating voltage
1
0
=operating current
M =multiple of the operating voltage above negativeresistance threshold
voltage
E
1h
=threshold field (about 3400 V/cm)
L =device length (about 10 to 200 }Lm)
no =donor concentration (about 10
15
eIcm
3
)
e =electron charge (1.6 x 10
19
C)
VO =average carrier drift velocity (about 10
7
cm/s)
A =device area (about 3 x 10
4
to 20 x 10  4 cm
2
)
For an LSA oscillator, no is primarily determined by the desired operating frequency
fo so that, for a properly designed circuit, peak power output is directly proportional
to the volume (LA) of the device length L multiplied by the area A of the active
layer. Active volume cannot be increased indefinitely. In the theoretical limit, this is
due to electrical wavelength and skindepth considerations. In the practical limit,
however, available bias, thermal dissipation capability, or technological problems
associated with material uniformity limit device length. The power capabilities of
LSA oscillators vary from 6 kW (pulse) at 1.75 GHz to 400 W (pulse) at 51 GHz.
Sec. 7.5 InP Diodes 293
Example 741: Output Power of an LSA Oscillator
An LSA oscillator has the following parameters:
Conversion efficiency:
Multiplication factor:
Threshold field:
Device length:
Donor concentration:
Average carrier velocity:
Area:
'T/ = 0.06
M = 3.5
E'h = 320 kVlm
L = 121Lm
no = 10
21
m
3
Vo = 1.5 X 10
5
m/s
A = 3 X 10
8
m
2
Determine the output power in milliwatts.
Solution From Eq. (742) the output power is
p = 'T/ (MEthL)(noevoA) = 0.06 x (3.5 x 320 x J03 x 12 x 10
6
)
x (10
21
x 1.6 X 10
19
x 1.5 X 10
5
x 3 x 10
8
)
= 0.06 x 13.44 x 7.2 x 10
1
= 581 mW
7·5 InP DIODES
When Gunn first announced his Gunn effect in 1963, the diodes he investigated were
of gallium arsenide (GaAs) and indium phosphide (InP). The GaAs diode was de
scribed earlier in the chapter. In this section the ntype InP diode is discussed. Both
the GaAs diode and the InP diode operate basically the same way in a circuit with dc
voltage applied at the electrodes. In the ordinary Gunn effect in the ntype GaAs,
the twovalley model theory is the foundation for explaining the electrical behavior
of the Gunn effect. However, Hilsum proposed that indium phosphide and some al
loys of indium gallium antimonide should work as threelevel devices [27]. Figure
751 shows the threevalley model for indium phosphide.
It can be seen that InP, besides having an uppervalley energy level and a
lowervalley energy level similar to the model shown in Fig. 724 for ntype GaAs,
also has a third middlevalley energy level. In GaAs the electron transfer process
from the lower valley to the upper valley is comparatively slow. At a particular
voltage above threshold current flow consists of a larger contribution of electrons
from the lower valley rather than from the upper valley. Because of this larger con
tribution from the lowerenergy level, a relatively low peaktovalley current ratio
results, which is shown in Fig. 752.
As shown in Fig. 753, the InP diode has a larger peaktovalley current ratio
because an electron transfer proceeds rapidly as the field increases. This situation oc
curs because the coupling between the lower valley and upper valley in InP is
weaker than in GaAs. The middlevalley energy level provides the additional energy
loss mechanism required to avoid breakdown caused by the high energies acquired
by the lowervalley electrons from the weak coupling.It can be seen from Fig. 751
294
Transferred Electron Devices (TEDs)
Strong coupling
Chap. 7
E
g
= 1.33 eV
Conduction
band
}
ForbiddL'n
gap
}
Valence
band
Figure 751 Threevalleymodel energy level for InP diode.
~
V>
2
E
u
'0
~
'u
0
OJ
>
c
0
.::
u
<lJ
iii
0
0
Peak current
Valley current
2 E
th
4 6 8 10
Electric field (kV/cm)
~
V>
E 2
u
'0
~
'u
o
OJ
>
c
g
U
<lJ
iii
Peak current
5 10 15
Electric field (kV/cm)
Figure 752 Peaktovalley current ra
tio for ntype GaAs.
Figure 753 Peaktovalley current ra
tio for InP.
that the lower valley is weakly coupled to the middle valley but strongly coupled to
the upper valley to prevent breakdown. This situation ensures that under normal op
erating conditions electrons concentrate in the middle valley. Because InP has a
greater energy separation between the lower valley and the nearest energy levels, the
thermal excitation of electrons has less effect, and the degradation of its peakto
valley current ratio is about four times less than in GaAs [28].
The mode of operation of InP is unlike the domain oscillating mode in which a
highfield domain is formed that propagates with a velocity of about 10
7
cm/s. As a
result, the output current waveform of an InP diode is transittime dependent. This
mode reduces the peaktovalley current ratio so that efficiency is reduced. For this
Figure 754 Activelayer thickness
versus frequency for InP diode. (From
B. C. Taylor and D. J. Colliver [29];
reprinted by permission of IEEE, Inc.)
40 10 15 20 30
Frequency of oscillator in GHz
OL I....__. L . . .   . : . . . : ~ __:!..___..::!:...J..._
5
25
20
15
40
10
reason, an operating mode is usually sought where charge domains are not formed.
The threevalley model of InP inhibits the formation of domains because the electron
diffusion coefficient is increased by the stronger coupling [28]. From experiments
performed by Taylor and Colliver [29] it was determined that epitaxial InP oscilla
tors operate through a transittime phenomenon and do not oscillate in a bulk mode
of the LSA type. From their findings it was determined that it is not appropriate to
attempt to describe the spacecharge oscillations in InP in terms of modes known to
exist in GaAs devices. Taylor and Colliver also determined that the frequencies ob
tained from a device were dependent on the activelayer thickness. The InP oscilla
tor could be tuned over a large frequency range, bounded only by the thickness, by
adjusting the cavity size. Figure 754 shows the frequency ranges for the different
activelayer thicknesses and lines of constant electron velocity [28, 29]. It can be
seen from the figure that only a few InP devices operate in the domain formation
area. In each case on the graph, the maximum efficiency occurs at about midband
[29]. Table 751 summarizes the highest power and efficiencies for InP diodes.
TABLE 7·5·1 BEST PERFORMANCE OF InP DIODE
Frequency Thickness Power Operation Efficiency Reference
(GHz) (JLm)
(W) (%)
5.5 3.05 pulsed 14.7 [28]
8.5 28 0.95 pulsed 7.0 [29]
10.75 1.33 pulsed 12.0 [28]
13.8 11 0.50 pulsed 6.3 [29]
15 1.13 pulsed 15 [28]
18 11 1.05 pulsed 4.2 [29]
18 0.20 CW 10.2 [28]
25 5.4 0.65 pulsed 2.6 [29]
26 0.15 CW 6 [28]
29.4 5.4 0.23 pulsed 2 [29]
33 5.4 0.10 pulsed 0.4 [29]
37 0.01 CW I [28]
296
7·6 CdTe DIODES
Transferred Electron Devices (TEDs) Chap. 7
The Gunn effect, first observed by Gunn as a time variation in the current through
samples of ntype GaAs when the voltage across the sample exceeded a critical
value, has since been observed in ntype InP, ntype CdTe, alloys of nGaAs and n
GaP, and in InAs. In ntype cadmium telluride (CdTe), the Gunn effect was first
seen by Foyt and McWhorter [30], who observed a time variation of the current
through samples 250 to 300 ILm long with a carrier concentration of 5 x 10
14
/cm
3
and a room temperature mobility of 1000 cm
2
/V. s. Ludwig, Halsted, and Aven
[31] confirmed the existence of current oscillations in nCdTe, and Ludwig has fur
ther reported studies of the Gunn effect in CdTe over a wider range of sample doping
levels and lengths [32]. It has been confirmed that the same mechanismthe field
induced transfer of electrons to a higher conduction band minimum (Gunn effect)
applies in CdTe just as it does in GaAs. From the twovalley model theory in CdTe,
as in GaAs, the (000) minimum is the lowest in energy. The effective mass meff =
0.11 m (electron mass) and the intrinsic mobility IL = 1100 cm
2
/V . s at room tem
perature. Hilsum has estimated that (11l) minima are the next lowest in energy, be
ing 0.51 eV higher than (000) minimum [33]. In comparing the Gunn effect in CdTe
to that in GaAs, a major difference is the substantially higher threshold field, about
13 kV/cm for CdTe compared with about 3 kVlcm for GaAs [34]. Qualitatively, the
higher threshold can be thought of as associated with the relatively strong coupling
of the electrons to longitudinal optical phonons, which limits the mobilityand
hence the rate of energy acquisition from the applied fieldand also provides an
efficient mechanism for transferring energy to the lattice, thereby minimizing the ki
netic energy in the electron distribution.
The ratio of peaktovalley current is another parameter of interest. In CdTe,
as in GaAs, the spike amplitude can be as large as 50% of the maximum total cur
rent. A similar maximum efficiency for CdTe and GaAs can be expected. Since the
domain velocities in CdTe and GaAs are approximately equal, samples of the same
length will operate at about the same frequency in the transittime mode. The high
threshold field of CdTe combined with its poor thermal conductivity creates a heat
ing problem. If sufficiently short pulses are used so that the heat can be dissipated,
however, the high operating field of the sample can be an advantage.
7·7 MICROWAVE GENERATION AND AMPLIFICATION
7·7·1 Microwave Generation
As described earlier in this section, if the applied field is less than threshold the
specimen is stable. If, however, the field is greater than threshold, the sample is un
stable and divides up into two domains of different conductivity and different elec
tric field but the same drift velocity. Figure 771 shows the stable and unstable re
gions.
At the initial formation of the accumulation layer, the field behind the layer de
creases and the field in front of it increases. This process continues as the layer trav
els from the cathode toward the anode. As the layer approaches the anode, the field
Sec. 7.7 Microwave Generation and Amplification 297
L.'__'__'_J' ~ E
Electric field E
Figure 771 Electric field versus drift
velocity.
behind it begins to increase again; and after the layer is collected by the anode, the
field in the whole sample is higher than threshold. When the highfield domain dis
appears at the anode, a new dipole field starts forming again at the cathode and the
process repeats itself. Since current density is proportional to the drift velocity of
the electrons, a pulsed current output is obtained. The oscillation frequency of the
pulsed current is given by
f = ~
L
eff
(771)
where Vd is the velocity of the domain or approximately the drift velocity of the elec
trons and L
eff
is the effective length that the domain travels. Experiments have shown
that the ntype GaAs diodes have yielded 2OOW pulses at 3.05 GHz and 780mW
CW power at 8.7 GHz. Efficiencies of 29% have been obtained in pulsed operation
at 3.05 GHz and 5.2% in CW operation at 24.8 GHz. Predictions have been made
that 250kW pulses from a single block of ntype GaAs are theoretically possible up
to 100 GHz.
The source generation of solidstate microwave devices has many advantages
over the vacuum tube devices they are beginning to replace. However, at present
they also have serious drawbacks that could prevent more widespread application.
The most important disadvantages are:
1. Low efficiency at frequencies above 10 GHz
2. Small tuning range
3. Large dependence of frequency on temperature
4. High noise
These problems are common to both avalanche diodes and transferred electron
devices [35].
Figure 772 shows the latest stateoftheart performance for GaAs and InP
Gunn diodes [36]. The numbers adjacent to the data points indicate efficiency in per
cent. Gunn diode oscillators have better noise performance than IMPATTs. They are
298
Transferred Electron Devices (TEDs) Chap. 7
10
NUMBERS INDICATE
'" EFFICIENCY ('!o)
030
"'" lIt
0
20
5 10 50 100
FREQUENCY (GHz)
DATA FROM PUBLISHED RESULTS:
HUGHES
MAlCOM
RAYTHEON
TRW
VARIAN
Figure 77·2 Stateoftheart perfor
mance for GaAs and InP Gunn diodes.
(From H. Hieslmair et al. [36J; reprinted
500 by permission a/Microwave Journal,
Inc.)
GsAs IMPATT
o ~
Si IMPATT
•
10
0.1
used as local oscillators for receivers and as primary sources where CW powers of
up to 100 mW are required. InP Gunn diodes have higher power and efficiency than
GaAs Gunn diodes.
7·7·2 Microwave Amplification
When an RF signal is applied to a Gunn oscillator, amplification of the signal oc
curs, provided that the signal frequency is low enough to allow the space charge in
the domain to readjust itself. There is a critical value of fL above which the device
will not amplify. Below this frequency limit the sample presents an impedance with
a negative real part that can be utilized for amplification. If flDL becomes less than
10
12
/cm
2
, domain formation is inhibited and the device exhibits a nonuniform field
distribution that is stable with respect to time and space. Such a diode can amplify
signals in the vicinity of the transittime frequency and its harmonics without oscilla
tion. If this device is used in a circuit with enough positive feedback, it will oscil
late. Hakki has shown that the oscillation diode can amplify at nearby frequencies or
can be used simultaneously as an amplifier and local oscillator [37]. However, the
output power of a stable amplifier is quite low because of the limitation imposed by
the value of no L.
Sec. 7.7 Microwave Generation and Amplification
299
In contrast to the stable amplifier, the Gunneffect diode must oscillate at the
transittime frequency while it is amplifying at some other frequency. The value of
noL must be larger than 1012/cm2 in order to establish traveling domain oscillations;
hence substantially larger output power can be obtained. Because of the presence of
highfield domains, this amplifier is called a traveling domain amplifier (TDA).
Although a large number of possible amplifier circuits exist, the essential fea
ture of each is to provide both a broadband circuit at the signal frequency and a
short circuit at the Gunn oscillation frequency. In order to maintain stability with re
spect to the signal frequency, the Gunn diode must see a source admittance whose
real part is larger than the negative conductance of the diode. The simplest circuit
satisfying this condition is shown in Fig. 773. An average gain of 3 dB was exhib
ited between 5.5 and 6.5 GHz.
Gunn diodes have been used in conjunction with circulatorcoupled networks
in the design of highlevel wideband transferred electron amplifiers that have a
voltage gainbandwidth product in excess of 10 dB for frequencies from 4 to about
16 GHz. Linear gains of 6 to 12 dB per stage and saturatedoutputpower levels in
excess of 0.5 W have been realized [39]. Table 77I lists the performance of sev
eral amplifiers that have been designed since 1970.
Pulse gencrator Bias
§o c1tJI'
Sweep ~ _ \
generator ~ I    ~
Spectrum 01
analyzcr ~
S e o p e ~
'..J lL Circulator
I Detector diode
Figure 773 Gunndiode amplifier cir
cuit. (After H. W. Thim [381; reprinted
by permission of IEEE, Inc.)
TABLE 7·7·1 CW GUNNDIODE AMPLIFIER PERFORMANCE
Frequency 3dB bandwidth Small signal gain Power gain Efficiency
band (GHz) (dB) (dB) (%)
C 4.5 8.0 8 3 3
X 7.510.75 12 1.65 2.3
8.012.0 6 1.8 2.5
Ku 12.016.0 6 1.5 2.5
13.015.0 8 0.36 2
Source: After B.S. Perlman et al. [39]; reprinted by permission of IEEE, Inc.
300
REFERENCES
Transferred Electron Devices (TEDs) Chap. 7
[1] SHOCKLEY, W., Negative resistance arising from transit time in semiconductor diodes.
Bell System Tech. J., 33,799826, July 1954.
[2] RIDLEY, B. K., and T. B. WATKINS, The possibility of negative resistance effects in semi
conductors. Proc. Phys. Soc., 78,293304, August 1961.
[3] HILSUM, C., Transferred electron amplifiers and oscillators. Proc. IEEE, 50, 185189,
February 1962.
[4] GUNN, J. B., Microwave oscillations of current in IIIV semiconductors. Solidstate
Communications, I, 8991, September 1963.
[5] RIDLEY, B. K., Specific negative resistance in solids. Proc. Phys. Soc. (London), 82,
954966, December 1963.
[6] KRaEMER, H., Theory of the Gunn effect. Proc. IEEE, 52,1736 (1964).
[7] GUNN, J. B., Microwave oscillations of current in IIIV semiconductors. Solidstate
Communications, 1,8891 (1963).
[8] GUNN, J. B., Instabilities of current in IIIV semiconductors. IBM J. Res. Develop., 8,
141159, ApriI1964.
[9] GUNN, J. B., Instabilities of current and of potential distribution in GaAs and InP. 7th
Int. Conf. on Physics of Semiconductor "Plasma Effects in Solids," 199207, Tokyo,
1964.
[10] KRaEMER, H., Proposed negativemass microwave amplifier. Physical Rev., 109, No.5.
1856, March 1, 1958.
[11] KRaEMER, H., The physical principles of a negativemass amplifier. Proc. IRE, 47,
397406, March 1959.
[12] COPELAND, J. A., Bulk negativeresistance semiconductor devices. IEEE Spectrum, No.
5,40, May 1967.
[13] BUTCHER, P. N., and W. FAWCETT, Calculation of the velocityfield characteristics of gal
lium arsenide. Appl. Phys. Letters, 21,498 (1966).
[14] CONWELL, E. M. and M. O. VASSELL, Highfield distribution function in GaAs. IEEE
Trans. on Electron Devices, ED.l3, 22 (1966).
[15] RUCH, J. G., and G. S. KINO, Measurement of the velocityfield characteristics of gal
lium arsenide. Appl. Phys. Letters, 10, 50 (1967).
[16] KRaEMER, H., Negative conductance in semiconductors. IEEE Spectrum,S, No.1, 47,
January 1968.
[17] COPELAND, J. A., Characterization of bulk negativeresistance diode behavior. IEEE
Trans. on Electron Devices, ED·14, No.9, 436441, September 1967.
[18] ELLIOTT, B. 1.,1. B. GUNN, and 1. C. MCGRODDY, Bulk negative differential conductivity
and traveling domains in ntype germanium. Appl. Phys. Letters, 11,253 (1967).
[19] COPELAND, J. A., Stable spacecharge layers in twovalley semiconductors. J. Appl.
Phys., 37, No.9, 3602, August 1966.
[20] GUNN, J. B., Effect of domain and circuit properties on oscillations in GaAs. IBM J.
Res. Develop., 310320, July 1966.
[21] HOBSON, G. S., Some properties of Gunneffect oscillations in a biconical cavity. IEEE
Trans. on Electron Devices, ED·14, No.9, 526531, September 1967.
[22] THIM, H. W., Computer study of bulk GaAs devices with random onedimensional dop
ing fluctuations. J. Appl. Phys., 39, 3897 (1968).
Chap. 7 Suggested Readings 301
[23] THIM, H. w., and M. R. BARBER, Observation of multiple highfield domains in nGaAs.
Proc. IEEE, 56, 110 (1968).
[24] UENOHARA, M., Bulk gallium arsenide devices. Chapter 16 in H. A. Watson (Ed.), Mi
crowave Semiconductor Devices and Their Circuit Application. McGrawHill Book
Company, New York, 1969.
[25] COPELAND, 1. A., CW operation of LSA oscillator diodes44 to 88 GHz. Bell System
Tech. J., 46, 284287, January 1967.
[26] WILSON, W. E., Pulsed LSA and TRAPATT sources for microwave systems. Microwave
J., 14, No.8, August 1971, 8790.
[27] G. B. L., Threelevel oscillator in indium phosphide. Physics Today, 23, 1920, De
cember 1970.
[28] COLLIVER, D., and B. PREW, Indium phosphide: Is it practical for solid state microwave
sources? Electronics, llO113, April 10, 1972.
[29] TAYLOR, B. c., and D. 1. COLLIVER, Indium phosphide microwave oscillators. IEEE
Trans. on Electron Devices, ED18, No. 10, 835840, October 1971.
[30] FoYT, A. G., and A. L. MCWHORTER, The Gunn effect in polar semiconductors. IEEE
Trans. on Electron Devices, ED13, 7987, January 1966.
[31] LUDWIG, G. W., R. E. HALSTED, and M. AVEN, Current saturation and instability in
CdTe and ZnSe. IEEE Trans. on Electron Devices, ED13, 671, AugustSeptember
1966.
[32] LUDWIG, G. W., Gunn effect in CdTe. IEEE Trans. on Electron Devices, ED14, No.9,
547551, September 1967.
[33] BUTCHER, P. N., and W. FAWCETT, Proc. Phys. Soc. (London), 86, 1205 (1965).
[34] OLIVER, M. R., and A. G. FoYT, The Gunn effect in nCdTe. IEEE Trans. on Electron
Devices, ED14, No.9, 617618, September 1967.
[35] HILSUM, c., New developments in transfered electron effects. Proc. 3rd Conf. on High
Frequency Generation and Amplification: Devices and Applications. August 1719,
1971, Cornell Universi ty.
[36] HIESLMAIR, H., ET AL., State of the art of solidstate and tube transmitters. Microwave
1., 26, No. 10,4648, October 1983.
[37] HAKKI, B. W., GaAs postthreshold microwave amplifier, mixer, and oscillator. Proc.
IEEE (Letters), 54,299300, February 1966.
[38] THIM, H. W., Linear microwave amplification with Gunn oscillators. IEEE Trans. on
Electron Devices, ED14, No.9, 520526, September 1967.
SUGGESTED READINGS
EASTMAN, L. F., Gallium Arsenide Microwave Bulk and TransitTime Devices. Artech House,
Dedham, Mass., 1973.
MILNES, A. G., Semiconductor Devices and Integrated Electronics. Van Nostrand Reinhold
Company, New York, 1980.
SOOHOO, R. F., Microwave Electronics. AddisonWesley Publishing Company, Reading,
Mass., 1971.
SZE, S. M., Physics of Semiconductor Devices, 2nd ed. John Wiley & Sons, New York, 1981.
302
PROBLEMS
Transferred Electron Devices (TEDs) Chap. 7
Transferred Electron Devices (TEDs)
71. a. Spell out the following abbreviated terms: LSA, InP, and CdTe.
b. Describe in detail the principles of the following terms: Gunn effect, highfield do
main theory, twovalley theory, and threevalley theory.
c. Discuss the differences between transferred electron devices and avalanche transit
time devices.
72. Describe the operating principles of tunnel diodes, Gunn diodes, and LSA diodes.
73. Derive Eq. (7211).
74. Describe the modes of operation for Gunn diodes.
75. Describe the RidleyWatkinsHilsum theory.
76. The LSA oscillation mode is defined between 2 x 10
4
and 2 x 10
5
ratios of doping
over frequency as shown in Fig. 731. Derive Eqs. (737) and (739).
77. For a transittime domain mode, the domain velocity is equal to the carrier drift veloc
ity and is about 10
7
cm/s. Determine the drift length of the diode at a frequency of
8 GHz.
Chapter 8
Avalanche TransitTime
Devices
8·0 INTRODUCTION
Avalanche transittime diode oscillators rely on the effect of voltage breakdown
across a reversebiased pn junction to produce a supply of holes and electrons. Ever
since the development of modern semiconductor device theory scientists have specu
lated on whether it is possible to make a twoterminal negativeresistance device.
The tunnel diode was the first such device to be realized in practice. Its operation de
pends on the properties of a forwardbiased pn junction in which both the p and n
regions are heavily doped. The other two devices are the transferred electron devices
and the avalanche transittime devices. In this chapter the latter type is discussed.
The transferred electron devices or the Gunn oscillators operate simply by the
application of a dc voltage to a bulk semiconductor. There are no pn junctions in
this device. Its frequency is a function of the load and of the natural frequency of the
circuit. The avalanche diode oscillator uses carrier impact ionization and drift in the
highfield region of a semiconductor junction to produce a negative resistance at mi
crowave frequencies. The device was originally proposed in a theoretical paper by
Read [1] in which he analyzed the negativeresistance properties of an idealized n+
pip+ diode. Two distinct modes of avalanche oscillator have been observed. One is
the IMPATT mode, which stands for impact ionization avalanche transittime opera
tion. In this mode the typical dctoRF conversion efficiency is 5 to 10%, and fre
quencies are as high as 100 GHz with silicon diodes. The other mode is the TRAP
ATT mode, which represents trapped plasma avalanche triggered transit operation.
Its typical conversion efficiency is from 20 to 60%.
Another type of active microwave device is the BARITT (barrier injected
transittime) diode [2]. It has long drift regions similar to those of IMPATT diodes.
The carriers traversing the drift regions of BARITT diodes, however, are generated
303
304 Avalanche TransitTime Devices Chap. 8
by minority carrier injection from forwardbiased junctions rather than being ex
tracted from the plasma of an avalanche region. Several different structures have
been operated as BARITT diodes, such as pnp, pnvp, pnmetal, and metaln
metal. BARITT diodes have low noise figures of 15 dB, but their bandwidth is rela
tively narrow with low output power.
8·1 READ DIODE
8·1·1 Physical Description
The basic operating principle of IMPATT diodes can be most easily understood by
reference to the first proposed avalanche diode, the Read diode [1]. The theory of
this device was presented by Read in 1958, but the first experimental Read diode
was reported by Lee et al. in 1965 [3]. A mode of the original Read diode with a
doping profile and a dc electric field distribution that exists when a large reverse bias
is applied across the diode is shown in Fig. 811.
x
• I
I
I
L
i (or v)
I ~
I
I
Spacecharge region t
Drift region
Avalanche
region
E(x)
I
I I
"0
'\J
I I
"'
I
I
i.;:; ifl
ee I
I
,g
I
e
I
u
ifl
I
I
" I
e
I
u::i
ifl I
e
I
J
+
(a)
(b)
Silicon structure
Field distribution
I
Distance
I
I
r
I
~
10
20
I
M
I
I
E
I
(c)
u
I
c
_I
Doping profile
.g
5 x 10
16
1
oj
I
l::
I
c
"
I
u
g
I
U
10
13
+
:2
fJrn
0 3
Distance
Figure 811 Read diode.
Sec. 8.1 Read Diode 305
The Read diode is an n+pip+ structure, where the superscript plus sign de
notes very high doping and the i or v refers to intrinsic material. The device consists
essentially of two regions. One is the thin p region at which avalanche multiplication
occurs. This region is also called the highfield region or the avalanche region. The
other is the i or v region through which the generated holes must drift in moving to
the p+ contact. This region is also called the intrinsic region or the drift region. The
p region is very thin. The space between the n+p junction and the ip+ junction is
called the spacecharge region. Similar devices can be built in the p+nin+ struc
ture, in which electrons generated from avalanche multiplication drift through the i
region.
The Read diode oscillator consists of an n+pip+ diode biased in reverse and
mounted in a microwave cavity. The impedance of the cavity is mainly inductive and
is matched to the mainly capacitive impedance of the diode to form a resonant cir
cuit. The device can produce a negative ac resistance that, in turn, delivers power
from the dc bias to the oscillation.
8·1·2 Avalanche Multiplication
When the reversebiased voltage is well above the punchthrough or breakdown
voltage, the spacecharge region always extends from the n+p junction through the
p and i regions to the ip+ junction. The fixed charges in the various regions are
shown in Fig. 81I(b). A positive charge gives a rising field in moving from left to
right. The maximum field, which occurs at the n+p junction, is about several hun
dred kilovolts per centimeter. Carriers (holes) moving in the high field near the n+p
junction acquire energy to knock valence electrons into the conduction band, thus
producing holeelectron pairs. The rate of pair production, or avalanche multiplica
tion, is a sensitive nonlinear function of the field. By proper doping, the field can be
given a relatively sharp peak so that avalanche multiplication is confined to a very
narrow region at the n+p junction. The electrons move into the n+ region and the
holes drift through the spacecharge region to the p+ region with a constant velocity
Vd of about 10
7
cmls for silicon. The field throughout the spacecharge region is
above about 5 kVlcm. The transit time of a hole across the drift iregion L is given
by
L
T =
Vd
and the avalanche multiplication factor is
(811)
(81la)
where V = applied voltage
Vb = avalanche breakdown voltage
n = 36 for silicon is a numerical factor depending on the doping of p+n or
n+p junction
306 Avalanche TransitTime Devices Chap. 8
The breakdown voltage for a silicon p+n junction can be expressed as
IVb I = PnJLnEs/ E
max
I ~
2
(81lb)
where pn = resistivity
JLn = electron mobility
E
s
= semiconductor permittivity
E
max
= maximum breakdown of the electric field
Figure 812 shows the avalanche breakdown voltage as a function of impurity at a
p+ n junction for several semiconductors.
~
'0
,.
.5
';0.."
100
'"
0lJ
"'
'0
,.
"
10
c
.",
"'"
'"
'"
dS
Impurity density in cm
J
Figure 812 Breakdown voltage ver
sus impurity doping.
8·1·3 Carrier Current lo(t) and External Current I.(t)
As described previously, the Read diode is mounted in a microwave resonant circuit.
An ac voltage can be maintained at a given frequency in the circuit, and the total
field across the diode is the sum of the dc and ac fields. This total field causes break
down at the n+p junction during the positive half of the ac voltage cycle if the field
is above the breakdown voltage, and the carrier current (or the hole current in this
case) lo(t) generated at the n+p junction by the avalanche multiplication grows ex
ponentially with time while the field is above the critical value. During the negative
half cycle, when the field is below the breakdown voltage, the carrier current Io(t)
decays exponentially to a small steadystate value. The carrier current Io(t) is the
current at the junction only and is in the form of a pulse of very short duration as
shown in Fig. 813(d). Therefore the carrier current Io(t) reaches its maximum in
the middle of the ac voltage cycle, or onequarter of a cycle later than the voltage.
Under the influence of the electric field the generated holes are injected into the
spacecharge region toward the negative terminal. As the injected holes traverse the
drift space, they induce a current le(t) in the external circuit as shown in Fig.
813(d).
Sec. 8.1 Read Diode
(a)
307
Structure
(b)
Field distribution
+
Spacecharge region
(c)
Applied ac voltage 0
I
I
I
,
I
I
I
I
I
I
I
I
I
I
(d) I
I
1
0
(t) and I,. (t) L' __
o 2T
WI
Figure 813 Field, voltage, and currents in Read diode. (After Read [1];
reprinted by permission of the Bell System, AT&T Co.)
When the holes generated at the n+p junction drift through the spacecharge
region, they cause a reduction of the field in accordance with Poisson's equation:
dE
dx
_f!
(812)
where p is the volume charge density and E
s
is the semiconductor permittivity.
Since the drift velocity of the holes in the spacecharge region is constant, the
induced current Ie(t) in the external circuit is simply equal to
I.(t) = = (813)
308 Avalanche TransitTime Devices Chap. 8
where Q = total charge of the moving holes
Vd = hole drift velocity
L = length of the drift i region
It can be seen that the induced current le(t) in the external circuit is equal to
the average current in the spacecharge region. When the pulse of hole current Io(t)
is suddenly generated at the n+p junction, a constant current le(t) starts flowing in
the external circuit and continues to flow during the time T in which the holes are
moving across the spacecharge region. Thus, on the average, the external current
le(t) because of the moving holes is delayed by T /2 or 90° relative to the pulsed car
rier current lo(t) generated at the n+p junction. Since the carrier Io(t) is delayed by
onequarter of a cycle or 90° relative to the ac voltage, the external current le(t) is
then delayed by 180° relative to the voltage as shown in Fig. 813(d). Therefore the
cavity should be tuned to give a resonant frequency as
7T
27Tf = 
T
Then
f = J.. = ~ (814)
2T 2L
Since the applied ac voltage and the external current le(t) are out of phase by 180°,
negative conductance occurs and the Read diode can be used for microwave oscilla
tion and amplification. For example, taking Vd = 10
7
cm/s for silicon, the optimum
operating frequency for a Read diode with an iregion length of 2.5 /Lm is 20 GHz.
8·1·4 Output Power and Quality Factor Q
The external current le(t) approaches a square wave, being very small during the
positive half cycle of the ac voltage and almost constant during the negative half cy
cle. Since the direct current I
d
supplied by the dc bias is the average external current
or conductive current, it follows that the amplitude of variation of lit) is approxi
mately equal to I
d
• If Va is the amplitude of the ac voltage, the ac power delivered is
found to be
W/unit area (815)
The quality factor Q of a circuit is defined as
maximum stored energy
Q = Waverage dissipated power
(816)
Since the Read diode supplies ac energy, it has a negative Q in contrast to the posi
tive Q of the cavity. At the stable operating point, the negative Q of the diode is
equal to the positive Q of the cavity circuit. If the amplitude of the ac voltage in
creases, the stored energy, or energy of oscillation, increases faster than the energy
Sec. 8.2 IMPATI Diodes 309
delivered per cycle. This is the condition required in order for stable oscillation to be
possible.
8·2 IMPATT DIODES
8·2·1 Physical Structures
A theoretical Read diode made of an n+pip+ or p+nin+ structure has been ana
lyzed. Its basic physical mechanism is the interaction of the impact ionization
avalanche and the transit time of charge carriers. Hence the Readtype diodes are
called IMPATT diodes. These diodes exhibit a differential negative resistance by two
effects:
1. The impact ionization avalanche effect, which causes the carrier current Io(t)
and the ac voltage to be out of phase by 90°
2. The transittime effect, which further delays the external current Ie(t) relative
to the ac voltage by 90°
The first IMPATT operation as reported by Johnston et al. [4] in 1965, how
ever, was obtained from a simple pn junction. The first real Readtype IMPATT
diode was reported by Lee et al. [3], as described previously. From the smallsignal
theory developed by Gilden [5] it has been confirmed that a negative resistance of
the IMPATT diode can be obtained from a junction diode with any doping profile.
Many IMPATT diodes consist of a high doping avalanching region followed by a
drift region where the field is low enough that the carriers can traverse through it
without avalanching. The Read diode is the basic type in the IMPATT diode family.
The others are the onesided abrupt pn junction, the linearly graded pn junction
(or doubledrift region), and the pin diode, all of which are shown in Fig. 821.
The principle of operation of these devices, however, is essentially similar to the
mechanism described for the Read diode.
8·2·2 Negative Resistance
Smallsignal analysis of a Read diode results in the following expression for the real
part of the diode terminal impedance [5]:
2L2  cos ()
R = Rs +  2/ 2 () (821)
vd€sA 1  w w,
where R
s
= passive resistance of the inactive region
Vd = carrier drift velocity
L = length of the drift spacecharge region
A = diode cross section
e
s
= semiconductor dielectric permittivity
310 Avalanche TransitTime Devices Chap. 8
(a) Abrupt pn junction
0
n
6
~
10
2
°......
,.,
......
I
E
~
" Doping profile .g
'"
10
16 ....

;:
0)
u
"
0
U
0 2 3 Jim
(b) Linearly graded
0 I ~
pn junction
p n
,.,
10
2O
I
E
~
"
Doping profile
.g
'"
....
;:
0)
u
s::
0
U
0 2 3 Jim
(c) pin diode
0 6
~
10
20
..
.... ,.,
E
2
"
Doping profile
.g
'" ;:
Figure 821 Three typical silicon
;:;
IMPATT diodes. (After R. L. Johnston et
u
"
10
13
al. [4]; reprinted by permission of the 0
U
Bell System, AT&T Co.)
0 2
3 Jim
Moreover, () is the transit angle, given by
L
() = WT = w
Vd
and w, is the avalanche resonant frequency, defined by
w, == (2a I
V
d
l
o
)1/2
EsA
(822)
(823)
Sec. 8.2 IMPATI Diodes
311
(824)
In Eq. (823) the quantity a I is the derivative of the ionization coefficient with re
spect to the electric field. This coefficient, the number of ionizations per centimeter
produced by a single carrier, is a sharply increasing function of the electric field.
The variation of the negative resistance with the transit angle when W > W
r
is plot
ted in Fig. 822. The peak value of the negative resistance occurs near () = 7T. For
transit angles larger than 7T and approaching 37T/2, the negative resistance of the
diode decreases rapidly. For practical purposes, the Readtype IMPATT diodes work
well only in a frequency range around the 7T transit angle. That is,
f = . ! = ~
2T 2L
rr 2rr 3rr
Transit angle ()
823 Power Output and Efficiency
Figure 822 Negative resistance versus
transit angle.
At a given frequency the maximum output power of a single diode is limited by
semiconductor materials and the attainable impedance levels in microwave circuitry.
For a uniform avalanche, the maximum voltage that can be applied across the diode
is given by
(825)
(826)
where L is the depletion length and Em is the maximum electric field. This maximum
applied voltage is limited by the breakdown voltage. Furthermore, the maximum
current that can be carried by the diode is also limited by the avalanche breakdown
process, for the current in the spacecharge region causes an increase in the electric
field. The maximum current is given by
1
m
= JmA = fTEmA = ~ E m A = VdEs:m
A
Therefore the upper limit of the power input is given by
(827)
312
Avalanche TransitTime Devices Chap. 8
The capacitance across the spacecharge region is defined as
c = €sA
L
(828)
Substitution of Eq. (828) in Eq. (827) and application of 27TfT = I yield
(829)
It is interesting to note that this equation is identical to Eq. (5160) of the power
frequency limitation for the microwave power transistor. The maximum power that
can be given to the mobile carriers decreases as 1/ f. For silicon, this electronic
limit is dominant at frequencies as high as 100 GHz. The efficiency of the IMPATT
diodes is given by
1]
(8210)
10
NUMBERS INDICATE
'" EFFICIENCY ('!o)
030
"'" lit
0
20
•
10
GaAs IMPATT
o ~
SIIMPATT
5 10 50 100
FREQUENCY (GHz)
Figure 823 Stateoftheart perfor
mance for GaAs and Si IMPATTs. (From
500 H. Hieslmair, et al. [6J; reprinted by
permission of Microwave Journal.)
1/1'
20
018
10
10
DATA FROM PUBLISHED RESULTS:
HUGHES
MAlCOM
RAYTHEON
TRW
VARIAN
0.1
Sec. 8.2 IMPATT Diodes
313
For an ideal Readtype IMPATT diode, the ratio of the ac voltage to the applied
voltage is about 0.5 and the ratio of the ac current to the dc current is about 2/1T, so
that the efficiency would be about 1/1T or more than 30%. For practical IMPATT
diodes, however, the efficiency is usually less than 30% because of the spacecharge
effect, the reversesaturationcurrent effect, the highfrequencyskin effect, and the
ionizationsaturation effect.
IMPATT diodes are at present the most powerful CW solidstate microwave
power sources. The diodes have been fabricated from germanium, silicon, and gal
lium arsenide and can probably be constructed from other semiconductors as well.
IMPATT diodes provide potentially reliable, compact, inexpensive, and moderately
efficient microwave power sources.
Figure 823 shows the latest stateoftheart performance for GaAs and Si
IMPATTs [6]. The numbers adjacent to the data points indicate efficiency in percent.
Power output data for both the GaAs and Si IMPATTs closely follow the 1/1 and
1/1
2
slopes. The transition from the 1/Ito the 1/P slope for GaAs falls between 50
and 60 GHz, and that for Si IMPATTs between 100 and 120 GHz. GaAs IMPATTs
show higher power and efficiency in the 40 to 60GHz region whereas Si IMPATTs
are produced with higher reliability and yield in the same frequency region. On the
contrary, the GaAs IMPATTs have higher powers and efficiencies below 40 GHz
than do Si IMPATTs. Above 60 GHz the Si IMPATTs seem to outperform the GaAs
devices.
Example 821: CW Output Power of an IMPATT Diode
An IMPATT diode has the following parameters:
Carrier drift velocity:
Driftregion length:
Maximum operating voltage:
Maximum operating current:
Efficiency:
Breakdown voltage:
Vd = 2 x 10
7
cm/s
L = 6 JLm
V
Omax
= 100 V
lomax = 200 rnA
T/ = 15%
Vb<! = 90 V
Compute: (a) the maximum CW output power in watts; (b) the resonant frequency in
gigahertz.
Solution
a. From Eq. (8210) the CW output power is
P = T/P
dc
= 0.15 x 100 x 0.2 = 3W
b. From Eq. (824) the resonant frequency is
Vd 2 X 10
5
f = 2L = 2 x 6 X 106 = 16.67 GHz
314
83 TRAPATT DIODES
831 Physical Structures
Avalanche TransitTime Devices Chap. 8
The abbreviation TRAPATT stands for trapped plasma avalanche triggered transit
mode, a mode first reported by Prager et al. [7]. It is a highefficiency microwave
generator capable of operating from several hundred megahertz to several gigahertz.
The basic operation of the oscillator is a semiconductor pn junction diode reverse
biased to current densities well in excess of those encountered in normal avalanche
operation. Highpeakpower diodes are typically silicon n+pp+ (or p+nn+) struc
tures with the ntype depletion region width varying from 2.5 to 12.5 JLm. The dop
ing of the depletion region is generally such that the diodes are well "punched
through" at breakdown; that is, the dc electric field in the depletion region just prior
to breakdown is well above the saturated driftvelocity level. The device's p+ region
is kept as thin as possible at 2.5 to 7.5 JLm. The TRAPATT diode's diameter ranges
from as small as 50 JLm for CW operation to 750 JLm at lower frequency for high
peakpower devices.
832 Principles of Operation
Approximate analytic solutions for the TRAPATT mode in p+nn+ diodes have
been developed by Clorfeine et al. [8] and DeLoach [9] among others. These analy
ses have shown that a highfield avalanche zone propagates through the diode and
fills the depletion layer with a dense plasma of electrons and holes that become
trapped in the lowfield region behind the zone. A typical voltage waveform for the
TRAPATT mode of an avalanche p+nn+ diode operating with an assumed square
wave current drive is shown in Fig. 831. At point A the electric field is uniform
throughout the sample and its magnitude is large but less than the value required for
avalanche breakdown. The current density is expressed by
dE
J = E
S dt
(831)
where E
s
is the semiconductor dielectric permittivity of the diode.
At the instant of time at point A, the diode current is turned on. Since the only
charge carriers present are those caused by the thermal generation, the diode ini
tially charges up like a linear capacitor, driving the magnitude of the electric field
above the breakdown voltage. When a sufficient number of carriers is generated, the
particle current exceeds the external current and the electric field is depressed
throughout the depletion region, causing the voltage to decrease. This portion of the
cycle is shown by the curve from point B to point C. During this time interval the
electric field is sufficiently large for the avalanche to continue, and a dense plasma of
electrons and holes is created. As some of the electrons and holes drift out of the
ends of the depletion layer, the field is further depressed and "traps" the remaining
plasma. The voltage decreases to point D. A long time is required to remove the
plasma because the total plasma charge is large compared to the charge per unit time
Sec. 8.3 TRAPAn Diodes
315
...I"l... 
,{},
Figure 831 Voltage and current
waveforms for TRAPATT diode. (After
A. S. Clorfeine et al. [8J; reprinted by
permission of RCA Laboratory.)
n
Charging
Plasma formation
<:
Plasma extraction
'" t::
"
B
Residual extraction
u
."
Charging
c:
'" Voltage
'"
Oll
~
A
A
"0
>
Current
0 TI2
T
Time
(832)
in the external current. At point E the plasma is removed, but a residual charge of
electrons remains in one end of the depletion layer and a residual charge of holes in
the other end. As the residual charge is removed, the voltage increases from point E
to point F. At point F all the charge that was generated internally has been removed.
This charge must be greater than or equal to that supplied by the external current;
otherwise the voltage will exceed that at point A. From point F to point G the diode
charges up again like a fixed capacitor. At point G the diode current goes to zero for
half a period and the voltage remains constant at VA until the current comes back on
and the cycle repeats. The electric field can be expressed as
E(x, t) = Em  qN
A
X + !!.
€,. €,.
(833)
where N
A
is the doping concentration of the n region and x is the distance.
Thus the value of t at which the electric field reaches Em at a given distance x
into the depletion region is obtained by setting E(x, t) = Em, yielding
t = qNA
x
J
Differentiation of Eq. (833) with respect to time t results in
dx J
v ==
Z dt qN
A
(834)
where v
z
is the avalanchezone velocity.
316 Avalanche TransitTime Devices Chap. 8
Example 831: AvalancheZone Velocity of a TRAPATT Diode
A TRAPATT diode has the following parameters:
Doping concentration:
Current density:
N
A
= 2 X 10
15
cm
3
J = 20 kA/cm2
Calculate the avalanchezone velocity.
Solution From Eq. (834) the avalanchezone velocity is
J 20 X 10
3
V
z
= qN
A
= 1.6 X 10 19 x 2 X 1015 = 6.25 X 10
7
cm/s
This means that the avalanchezone velocity is much larger than the scatteringlimited
velocity.
Thus the avalanche zone (or avalanche shock front) will quickly sweep across
most of the diode, leaving the diode filled by a highly conductng plasma of holes and
electrons whose space charge depresses the voltage to low values. Because of the de
pendence of the drift velocity on the field, the electrons and holes will drift at veloc
ities determined by the lowfield mobilities, and the transit time of the carriers can
become much longer than
L
T
s
=
V
s
(835)
where V
s
is the saturated carrier drift velocity.
Thus the TRAPATT mode can operate at comparatively low frequencies, since
the discharge time of the plasmathat is, the rate Q/I of its charge to its current
can be considerably greater than the nominal transit time T
s
of the diode at high field.
Therefore the TRAPATT mode is still a transittime mode in the real sense that the
time delay of carriers in transit (that is, the time between injection and collection) is
utilized to obtain a current phase shift favorable for oscillation.
8·3·3 Power Output and Efficiency
RF power is delivered by the diode to an external load when the diode is placed in a
proper circuit with a load. The main function of this circuit is to match the diode ef
fective negative resistance to the load at the output frequency while reactively termi
nating (trapping) frequencies above the oscillation frequency in order to ensure
TRAPATT operation. To date, the highest pulse power of 1.2 kW has been obtained
at 1.1 GHz (five diodes in series) [10], and the highest efficiency of 75% has been
achieved at 0.6 GHz (I 1). Table 831 shows the current state of TRAPATT diodes
[12].
The TRAPATT operation is a rather complicated means of oscillation, how
ever, and requires good control of both device and circuit properties. In addition,
Sec. 8.4 SARin Diodes 317
TABLE 8·3·1 TRAPATT OSCILLATOR CAPABILITIES
Frequency Peak power Average power Operating voltage Efficiency
(GHz) (W) (W) (V) (%)
0.5 600 3 150 40
1.0 200 I 110 30
1.0 400 2 110 35
2.0 100 I 80 25
2.0 200 2 80 30
4.0 100 I 80 20
8.0 50 I 60 15
Source: After W. E. Wilson [121; reprinted by permission of Horizon House.
the TRAPATT mode generally exhibits a considerably higher noise figure than the
IMPATT mode, and the upper operating frequency appears to be practically limited
to below the millimeter wave region.
'·4 BARITT DIODES
8·4·1 Physical Description
BARITT diodes, meaning barrier injected transittime diodes, are the latest addition
to the family of active microwave diodes. They have long drift regions similar to
those of IMPATT diodes. The carriers traversing the drift regions of BARITT
diodes, however, are generated by minority carrier injection from forwardbiased
junctions instead of being extracted from the plasma of an avalanche region.
Several different structures have been operated as BARITT diodes, including
pnp, pnvp, pnmetal, and metalnmetal. For a pnvp BARITT diode, the
forwardbiased pn junction emits holes into the v region. These holes drift with sat
uration velocity through the v region and are collected at the p contact. The diode
exhibits a negative resistance for transit angles between 7T and 27T. The optimum
transit angle is approximately l.w.
Such diodes are much less noisy than IMPATT diodes. Noise figures are as low
as 15 dB at Cband frequencies with silicon BARITT amplifiers. The major disad
vantages of BARITT diodes are relatively narrow bandwidth and power outputs lim
ited to a few milliwatts.
8·4·2 Principles of Operation
A crystal ntype silicon wafer with 11 flcm resistivity and 4 X 10
14
per cubic cen
timeter doping is made of a lOJLm thin slice. Then the ntype silicon wafer is sand
wiched between two PtSi Schottky barrier contacts of about 0.1 JLm thickness. A
schematic diagram of a metalnmetal structure is shown in Fig. 841(a).
The energyband diagram at thermal equilibrium is shown in Fig. 841(b),
where cPnl and cPn2 are the barrier heights for the metalsemiconductor contacts, re
318 Avalanche TransitTime Devices Chap. 8
(a) MIIM diode
(h) L n c r ~ y hand diagram in
thermal equilihrium
(c) L n e r ~ y band under
hias condition
Figure 841 MnM diode. (After D. J. Coleman and S. M. Sze [13J; reprinted
by permission of the Bell System, AT&T Co.)
spectively. For the PtSiSiPtSi structure mentioned previously, cPnl = cPn2 =
0.85 eV. The hole barrier height cPP2 for the forwardbiased contact is about 0.15 eY.
Figure 841 (c) shows the energyband diagram when a voltage is applied. The
mechanisms responsible for the microwave oscillations are derived from:
1. The rapid increase of the carrier injection process caused by the decreasing po
tential barrier of the forwardbiased metalsemiconductor contact
2. An apparent 37T /2 transit angle of the injected carrier that traverses the semi
conductor depletion region
The rapid increase in terminal current with applied voltage (above 30 V) as
shown in Fig. 842 is caused by thermionic hole injection into the semiconductor
as the depletion layer of the reversebiased contact reaches through the entire device
thickness. The critical voltage is approximately given by
qNU
V
c
=  (841)
2€s
where N = doping concentration
L = semiconductor thickness
€s = semiconductor dielectric permittivity
Sec. 8.4 SARin Diodes 319
~
_T=300oK
~ ~
r nOK
:l
~
/
~
A
j

V
10
2
10
3
10
4
10
5
,.,
'" 10
6
e
.,
0
S
~
10
7
....
10
8
10
9
10
10
10
11
o 20 40
V (volts)
60
Figure 842 Current versus voltage of
a BARITf diode (PtSiSiPtSi). (After
D. J. Coleman and S. M. Sze [/3];
80 reprinted by permission of the Bell Sys
tem, AT&T Co.)
The currentvoltage characteristics of the silicon MSM structure (PtSi
SiPtSi) were measured at 77° K and 300° K. The device parameters are L = 10
JLm, N = 4 X 10
14
cm
3
, cPnl = cPn2 = 0.85 eV, and area = 5 X 10
4
cm
2
•
The current increase is not due to avalanche multiplication, as is apparent from
the magnitude of the critical voltage and its negative temperature coefficient. At 77°
K the rapid increase is stopped at a current of about 10  5 A. This saturated current
is expected in accordance with the thermionic emission theory of hole injection
from the forwardbiased contact with a hole barrier height (cPP2) of about 0.15 eY.
8·4·3 Microwave Performance
Continuouswave (CW) microwave performance of the MnMtype BARITT diode
was obtained over the entire C band of 4 to 8 GHz. The maximum power observed
was 50 mW at 4.9 GHz. The maximum efficiency was about 1.8%. The FM single
sideband noise measure at 1 MHz was found to be 22.8 dB at a 7mA bias current.
This noise measure is substantially lower than that of a silicon IMPATT diode and is
comparable to that of a GaAs transferelectron oscillator. Figure 843 shows some
of the measured microwave power versus current with frequency of operation indi
cated on each curve for three typical devices tested.
The voltage enclosed in parentheses for each curve indicates the average bias
voltage at the diode while the diode is in oscillation. The gainbandwidth product of
a 6GHz BARITT diode was measured to be 19dB gain at 5mA bias current at
200 MHz. The smallsignal noise measure was about 15 dB.
320
Avalanche TransitTime Devices Chap. 8
8 ..........rrr....... ~  .....
Current (rnA)
Figure 843 Power output versus cur
rent for three silicon MnM devices.
(After D. J. Coleman and S. M. Sze
[13]; reprinted by permission of the Bell
System. AT&T Co.)
14 12 4 6
7
6 ~  
oL...._I....'''.L._.L._.!._..J...._..J...._..J
o
~
: 5
1)
~
o
0. 4 ~   _ +  _ #  _    + . __
1)
>
oj
~
2 3
"
Example 841: Breakdown Voltage of a BARITT Diode
An MSiM BARITT diode has the following parameters:
Relative dielectric constant of silicon:
Donor concentration:
Silicon length:
f
r
= 11.8
N = 2.8 X 10
21
m
3
L = 6 JLm
Determine: a. the breakdown voltage; b. the breakdown electric field.
Solution
a. From Eq. (841) the breakdown voltage is double its critical voltage as
qNL
2
1.6 x 10
19
x 2.8 X 10
21
x (6 x 10
6
)2 = 154.36 V
V
bd
= z = 8.854 x 10 12 x 11.8
b. The breakdown electric field is
V
bd
154.36
E
bd
=  = = 2.573 X 10
7
Vim = 2.57 x lOS Vlcm
L 6 x 10
6
8·5 PARAMETRIC DEVICES
8·5·1 Physical Description
A parametric device is one that uses a nonlinear reactance (capacitance or induc
tance) or a timevarying reactance. The word parametric is derived from the term
parametric excitation, since the capacitance or inductance, which is a reactive
Sec. 8.5 Parametric Devices 321
parameter, can be used to produce capacitive or inductive excitation. Parametric ex
citation can be subdivided into parametric amplification and oscillation. Many of the
essential properties of nonlinear energystorage systems were described by Faraday
[14] as early as 1831 and by Lord Rayleigh [15] in 1883. The first analysis of the
nonlinear capacitance was given by van der Ziel [16] in 1948. In his paper van der
Ziel first suggested that such a device might be useful as a lownoise amplifier, since
it was essentially a reactive device in which no thermal noise is generated. In 1949
Landon [17] analyzed and presented experimental results of such circuits used as
amplifiers, converters, and oscillators. In the age of solidstate electronics, mi
crowave electronics engineers dreamed of a solidstate microwave device to replace
the noisy electron beam amplifier. In 1957 Suhl [18] proposed a microwave solid
state amplifier that used ferrite. The first realization of a microwave parametric am
plifier following Suh!' s proposal was made by Weiss [19] in 1957. After the work
done by Suhl and Weiss, the parametric amplifier was at last discovered.
At present the solidstate varactor diode is the most widely used parametric
amplifier. Unlike microwave tubes, transistors, and lasers, the parametric diode is of
a reactive nature and thus generates a very small amount of Johnson noise (thermal
noise). One of the distinguishing features of a parametric amplifier is that it utilizes
an ac rather than a dc power supply as microwave tubes do. In this respect, the para
metric amplifier is analogous to the quantum amplifier laser or maser in which an ac
power supply is used.
8·5·:1 Nonlinear Reactance and Afan/eyRowe Power
Relations
A reactance is defined as a circuit element that stores and releases electromagnetic
energy as opposed to a resistance, which dissipates energy. If the stored energy is
predominantly in the electric field, the reactance is said to be capacitive; if the
stored energy is predominantly in the magnetic field, the reactance is said to be in
ductive. In microwave engineering it is more convenient to speak in terms of
voltages and currents rather than electric and magnetic fields. A capacitive reactance
may then be a circuit element for which capacitance is the ratio of charge on the ca
pacitor over voltage across the capacitor. Then
C=Q
V
(851)
If the ratio is not linear, the capacitive reactance is said to be nonlinear. In this case,
it is convenient to define a nonlinear capacitance as the partial derivative of charge
with respect to voltage. That is,
iJQ
C(v) =
iJv
The analogous definition of a nonlinear inductance is
L (.) = iJ<I>
I iJi
(852)
(853)
322 Avalanche TransitTime Devices Chap. 8
(855)
(856)
In the operation of parametric devices, the mixing effects occur when voltages at
two or more different frequencies are impressed on a nonlinear reactance.
Smallsignal method. It is assumed that the signal voltage V
s
is much
smaller than the pumping voltage V
p
, and the total voltage across the nonlinear ca
pacitance C(t) is given by
v = V
s
+ Vp = V
s
cos (wst) + Vp cos (wpt) (854)
where V
s
<S'!: V
p
• The charge on the capacitor can be expanded in a Taylor series about
the point V
s
= 0, and the first two terms are
dQ(v
p
) I
Q(v) = Q(VI + v
p
) = Q(v
p
) +
For convenience, it is assumed that
C(v) = dQ(v
p
) = C(t)
p dv
where C(v
p
) is periodic with a fundamental frequency of W
p
, If the capacitance
C(v
p
) is expanded in a Fourier series, the result is
C(vp) = L en cos (nwpt)
n=O
(857)
Since V
p
is a function of time, the capacitance C(v
p
) is also a function of time. Then
C(t) = L C
n
cos (nwpt)
n=O
(858)
The coefficients en are the magnitude of each harmonic of the timevarying capaci
tance. In general, the coefficients C
n
are not linear functions of the ac pumping
voltage V
p
, Since the junction capacitance C(t) of a parametric diode is a nonlinear
capacitance, the principle of superposition does not hold for arbitrary ac signal am
plitudes.
The current through the capacitance C(t) is the derivative of Eq. (855) with
respect to time and it is
i = dQ = dQ(v
p
) +
dt dt dt
(859)
It is evident that the nonlinear capacitance behaves like a timevarying linear
capacitance for signals with amplitudes that are much smaller than the amplitude of
the pumping voltage. The first term of Eq. (859) yields a current at the pump fre
quency J;, and is not related to the signal frequency is .
Largesignal method. If the signal voltage is not small compared with the
pumping voltage, the Taylor series can be expanded about a dc bias voltage Va in a
junction diode. In a junction diode the capacitance C is proportional to
(<Po  V)1/2 = Vil
1
/
2
, where <po is the junction barrier potential and V is a negative
Sec. 8.5 Parametric Devices 323
voltage supply. Since
[Vo + Vp cos (wpt)r
1
!2 = Vo
1
!2(1  3;0 cos (wpt»)
the capacitance C(t) can be expressed as
C(t) = Co [1 + 2y cos (wpt)]
for V
p
<{ V
o
(8510)
The parameter y is proportional to the pumping voltage v
p
and indicates the coupling
effect between the voltages at the signal frequency is and the output frequency fo .
ManleyRowe power relations. Manley and Rowe [20] derived a set of
general energy relations regarding power flowing into and out of an ideal nonlinear
reactance. These relations are useful in predicting whether power gain is possible in
a parametric amplifier. Figure 851 shows an equivalent circuit for ManleyRowe
derivation.
C(tl
Figure 851 Equivalent circuit for ManleyRowe derivation.
In Fig. 851, one signal generator and one pump generator at their respective
frequencies is and};" together with associated series resistances and bandpass filters,
are applied to a nonlinear capacitance C(t). These resonating circuits of filters are
designed to reject power at all frequencies other than their respective signal frequen
cies. In the presence of two applied frequencies is and};" an infinite number of reso
nant frequencies of mfp ± nfp are generated, where m and n are any integers from
zero to infinity.
Each of the resonating circuits is assumed to be ideal. The power loss by the
nonlinear susceptances is negligible. That is, the power entering the nonlinear capac
itor at the pump frequency is equal to the power leaving the capacitor at the other
frequencies through the nonlinear interaction. Manley and Rowe established the
power relations between the input power at the frequencies is and fp and the output
power at the other frequencies mfp ± nfs.
From Eq. (854) the voltage across the nonlinear capacitor C(t) can be ex
pressed in exponential form as
(8511)
324 Avalanche TransitTime Devices Chap. 8
The general expression of the charge Q deposited on the capacitor is given by
m=oo n=oo
In order for the charge Q to be real, it is necessary that
Qm.n =
(8512)
(8513)
The total voltage v can be expressed as a function of the charge Q. A similar Taylor
series expansion of v (Q) shows that
v = 2: 2: Vm.nej(mwpt+nwst)
m=OO n=OO
In order for the voltage v to be real, it is required that
(8514)
(8515)
The current flowing through C(t) is the total derivative of Eq. (8512) with
respect to time. This is
. dQ
1==
dt
2: 2: j(mw
p
+ nws)Qm,nej(mwpt+nwst}
m=OO n=oo
n=OO
(8516)
where I
m
.
n
= j(mwp + nws)Qm,n and Im,n = Since the capacitance C(t) is as
sumed to be a pure reactance, the average power at the frequencies mfp + nfs is
Pm.n = +
= + = Pm,n
Then conservation of power can be written
m=Xln=OO
(8517)
(8518)
Multiplication of Eq. (8518) by a factor of (mwp + nws)/(mwp + nw
s
) and rear
rangement of the resultant into two parts yield
Since
w
p
i i mP
m
.
n
+ W
s
i i nPm,n = 0
m=oon=oo mwp + nw
s
mwp + nw
s
(8519)
Im.n/(mwp + nws) = jQm,n
then Pm,n/(mwp + nw
s
) becomes  and is independent of
Wp or W
s
• For any choice of the frequencies fp and.is , the resonating circuit external
to that of the nonlinear capacitance C(t) can be so adjusted that the currents may
keep all the voltage amplitudes Vm,n unchanged. The charges Qm.n are then also un
Sec. 8.5 Parametric Devices 325
changed, since they are functions of the voltages V
m
•
n
• Consequently, the frequen
cies Ip and Is can be arbitrarily adjusted in order to require
2.: 2.: mP
m
.
n
= 0
m ~  O O n ~  o o fflW
p
+ nw
s
2.: 2.: nP
m
.
n
= 0
m =  o o n ~  o o fflW
p
+ nw
s
Equation (8520) can be expressed as two terms:
i i mP
m
. n + i i mPm.n = 0
m ~ O n ~  o o fflW
p
+ nw
s
m ~ O n ~  o o fflW
p
 nw
s
Since P
m
•
n
= P
m
.
n
, then
i i mP
m
•
n
= 0
m ~ O n= 00 ml
p
+ nIs
Similarly,
(8520)
(8521)
(8522)
(8523)
(8524)
i i nP
m
•
n
= 0
m=oo n ~ O mJ;, + nfs
where W
p
and W
s
have been replaced by Ip and Is , respectively.
Equations (8523) and (8524) are the standard forms for the ManleyRowe
power relations. The term P
m
•
n
indicates the real power flowing into or leaving the
nonlinear capacitor at a frequency of mfp + nIs. The frequency J;, represents the fun
damental frequency of the pumping voltage oscillator and the frequency Is signifies
the fundamental frequency of the signal voltage generator. The sign convention for
the power term Pm.n will follow that power flowing into the nonlinear capacitance
or the power coming from the two voltage generators is positive, whereas the power
leaving from the nonlinear capacitance or the power flowing into the load resistance
is negative.
Consider, for instance, the case where the power output flow is allowed at a
frequency of Ip + Is as shown in Fig. 851. All other harmonics are open
circuited. Then currents at the three frequenciesJ;, ,Is, andJ;, + Is are the only ones
existing. Under these restrictions m and n vary from  1 through zero to +1, re
spectively. Then Eqs. (8523) and (8524) reduce to
PI.O + ~ = 0 (8525)
Ip Ip+Is
PO. I + ~ = 0 (8526)
Is J;, + Is
where PI.O and P
O
.
l
are the power supplied by the two voltage generators at the fre
quencies Ip and Is, respectively, and they are considered positive. The power Pl.!
flowing from the reactance into the resistive load at a frequency ofJ;, + Is is consid
ered negative.
326 Avalanche TransitTime Devices
Chap. 8
The power gain, which is defined as a ratio of the power delivered by the ca
pacitor at a frequency off" + fs to that absorbed by the capacitor at a frequency of fs
as shown in Eq. (8526) is given by
Gain = fp + fs = fr!. (for modulator) (8527)
fs fs
(8528) (for demodulator)
where f" + fs = fo and (Jp + fs) > fp > fs' The maximum power gain is simply
the ratio of the output frequency to the input frequency. This type of parametric
device is called the sumfrequency parametric amplifier or upconverter.
If the signal frequency is the sum of the pump frequency and the output fre
quency, Eq. (8526) predicts that the parametric device will have a gain of
Ga
' fs
m = ~ f
Jp + s
where fs = fp + fo and fo = fs  fp· This type of parametric device is called the
parametric downconverter and its power gain is actually a loss.
If the signal frequency is at fs, the pump frequency at fp, and the output fre
quency atfo, where fp = fs + fo, the power Pl,l supplied atfp is positive. Both Pt,o
and Po, I are negative. In other words, the capacitor delivers power to the signal gen
erator atfs instead of absorbing it. The power gain may be infinite, which is an un
stable condition, and the circuit may be oscillating both atfs andfo' This is another
type of parametric device, often called a negativeresistance parametric amplifier.
8·5·3 Parametric Amplifiers
In a superheterodyne receiver a radio frequency signal may be mixed with a signal
from the local oscillator in a nonlinear circuit (the mixer) to generate the sum and
difference frequencies. In a parametric amplifier the local oscillator is replaced by a
pumping generator such as a reflex klystron and the nonlinear element by a time
varying capacitor such as a varactor diode (or inductor) as shown in Fig. 852.
In Fig, 852, the signal frequency fs and the pump frequency f" are mixed in
the nonlinear capacitor C. Accordingly, a voltage of the fundamental frequencies fs
and f" as well as the sum and the difference frequencies mfp ± nfs appears across C.
If a resistive load is connected across the terminals of the idler circuit, an output
voltage can be generated across the load at the output frequency fo. The output cir
cuit, which does not require external excitation, is called the idler circuit. The out
put (or idler) frequency fo in the idler circuit is expressed as the sum and the differ
ence frequencies of the signal frequency fs and the pump frequency f". That is,
(8529)
where m and n are positive integers from zero to infinity.
If fo > fs, the device is called a parametric upconverter. Conversely, if
fo < fs, the device is known as a parametric downconverter.
Sec. 8.5 Parametric Devices
Signal circuit
Idler circuit
327
(8530)
Figure 852 Equivalent circuit for a parametric amplifier.
Parametric upconverter. A parametric upconverter has the following
properties:
1. The ouptut frequency is equal to the sum of the signal frequency and the pump
frequency.
2. There is no power flow in the parametric device at frequencies other than the
signal, pump, and output frequencies.
Power Gain. When these two conditions are satisfied, the maximum power
gain of a parametric upconverter [21] is expressed as
Gain = ~ x
JS (l + ~ ) 2
where fa = jp + Is
x = f!.(yQ)Z
fa
Q = 1
2'TTf
s
CR
d
Moreover, R
d
is the series resistance of a pn junction diode and yQ is the figure of
merit for the nonlinear capacitor. The quantity of xl(l + ~ ) 2 may be re
garded as a gaindegradation factor. As R
d
approaches zero, the figure of merit yQ
goes to infinity and the gaindegradation factor becomes equal to unity. As a result,
the power gain of a parametric upconverter for a lossless diode is equal to fol Is ,
which is predicted by the ManleyRowe relations as shown in Eq. (8527). In a
typical microwave diode yQ could be equal to 10. Iffol Is = 15, the maximum gain
given by Eq. (8530) is 7.3 dB.
328 Avalanche TransitTime Devices Chap. 8
(8531)
Noise Figure. One advantage of the parametric amplifier over the transistor
amplifier is its lownoise figure because a pure reactance does not contribute thermal
noise to the circuit. The noise figure F for a parametric upconverter [21] is given
by
2Td[ 1 1]
F = 1 + T; yQ + (yQr
where T
d
= diode temperature in degrees Kelvin
To = 300
0
K is the ambient temperature in degrees Kelvin
yQ = figure of merit for the nonlinear capacitor
In a typical microwave diode yQ could be equal to 10. If 10/Is = 10 and T
d
=
300
o
K, the minimum noise figure is 0.90 dB, as calculated by using Eq. (8531).
Bandwidth. The bandwidth of a parametric upconverter is related to the
gaindegradation factor of the merit figure and the ratio of the signal frequency to
the output frequency. The bandwidth equation [21] is given by
BW = 2yJii (8532)
Is
If fo/ is = 10 and y = 0.2, the bandwidth (BW) is equal to 1.264.
Example 851: UpConverter Parametric Amplifier
An upconverter parametric amplifier has the following parameters:
Ratio of output frequency over signal frequency:
Figure of merit:
Factor of merit figure:
Diode temperature:
fo/ is = 25
yQ = 10
y = 0.4
T
d
= 350
0
K
Calculate: (a) the power gain in decibels; (b) the noise figure in decibels; (c) the band
width.
Solution
a. From Eq. (8530) the upconverter power gain is
. fox 100/25
Power gam =  = 25 x
is (l + (l + VI + 100/25)2
= 9.55 = 9.80 dB
b. From Eq. (8531) the noise figure is
F = 1 + 2Td[_I_ + _1_] = 1 + 2 x + _1_] = 1.26 = 1 dB
To yQ (yQ)2 300 10 100
c. From Eq. (8532) the bandwidth is
BW = 2YJif. = 2 x 0.4 X (25)1/2 = 4
j,
Sec. 8.5 Parametric Devices 329
Parametric downconverter. If a mode of down conversion for a paramet
ric amplifier is desirable, the signal frequency is must be equal to the sum of the
pump frequency jp and the output frequency fa. This means that the input power
must feed into the idler circuit and the output power must move out from the signal
circuit as shown in Fig. 852. The downconversion gain (actually a loss) is given
by [21]
(8533)
Negativeresistance parametric amplifier. If a significant portion of
power flows only at the signal frequency is , the pump frequency jp , and the idler fre
quency j;, a regenerative condition with the possibility of oscillation at both the sig
nal frequency and the idler frequency will occur. The idler frequency is defined as
the difference between the pump frequency and the signal frequency, j; = fp  fs.
When the mode operates below the oscillation threshold, the device behaves as a bi
lateral negativeresistance parametric amplifier.
Power Gain. The output power is taken from the resistance R; at a frequency
j;, and the conversion gain fromis to j; [21] is given by
Gain = 4j;. RgR;. a
is RTsR
T
; (l  a)2
where is = signal frequency
jp = pump frequency
j; = fp  fs is the idler frequency
R
g
= output resistance of the signal generator
R; = output resistance of the idler generator
RTs = total series resistance at is
R
Ti
= total series resistance atj;
a = R/R
Ts
R = y2/(w
s
W; C
2
R
T
;) is the equivalent negative resistance
(8534)
Noise Figure. The optimum noise figure of a negativeresistance parametric
amplifier [21] is expressed as
Td[ 1 1]
F = I + 2
To
yQ + (yQ)Z
(8535)
where yQ = figure of merit for the nonlinear capacitor
To = 300
0
K is the ambient temperature in degrees Kelvin
T
d
= diode temperature in degrees Kelvin
It is interesting to note that the noise figure given by Eq. (8535) is identical to that
for the parametric upconverter in Eq. (8531).
330 Avalanche TransitTime Devices Chap. 8
(8537)
(8538)
Bandwidth. The maximum gain bandwidth of a negativeresistance paramet
ric amplifier [21] is given by
BW = 1.J fi (8536)
2 Is gain
If gain = 20 dB, fi = 41s, and 'Y = 0.30, the maximum possible bandwidth for
singletuned circuits is about 0.03.
Degenerate parametric amplifier. The degenerate parametric amplifer or
oscillator is defined as a negativeresistance amplifier with the signal frequency equal
to the idler frequency. Since the idler frequency fi is the difference between the
pump frequency fp and the signal frequency Is, the signal frequency is just onehalf
the pump frequency.
Power Gain and Bandwidth. The power gain and bandwidth characteristics
of a degenerate parametric amplifier are exactly the same as for the parametric up
converter. With Is = fi and fr, = 21s, the power transferred from pump to signal
frequency is equal to the power transferred from pump to idler frequency. At high
gain the total power at the signal frequency is almost equal to the total power at the
idler frequency. Hence the total power in the passband will have 3 dB more gain.
Noise Figure. The noise figures for a singlesideband and a doublesideband
degenerate parametric amplifier [21] are given by, respectively,
F: = 2 + itdR
d
ssb ToR
g
I'dR
d
F
dsb
= 1 + ToR
g
where I'd = average diode temperature in degrees Kelvin
To = 300
0
K is the ambient noise temperature in degrees Kelvin
R
d
= diode series resistance in ohms
R
g
= external output resistance of the signal generator in ohms
It can be seen that the noise figure for doublesideband operation is 3 dB less than
that for singlesideband operation.
8·5·4 Applications
The choice of which type of parametric amplifier to use depends on the microwave
system requirements. The upconverter is a unilateral stable device with a wide
bandwidth and low gain. The negativeresistance amplifier is inherently a bilateral
and unstable device with narrow bandwidth and high gain. The degenerate paramet
ric amplifier does not require a separate signal and idler circuit coupled by the diode
and is the least complex type of parametric amplifier.
Chap. 8 References 331
In general, the upconverter has the following advantages over the negative
resistance parametric amplifier:
1. A positive input impedance
2. Unconditionally stable and unilateral
3. Power gain independent of changes in its source impedance
4. No circulator required
5. A typical bandwidth on the order of 5%
At higher frequencies where the upconverter is no longer practical, the negative
resistance parametric amplifier operated with a circulator becomes the proper choice.
When a low noise figure is required by a system, the degenerate parametric amplifier
may be the logical choice, since its doublesideband noise figure is less than the op
timum noise figure of the upconverter or the nondegenerate negativeresistance
parametric amplifier. Furthermore, the degenerate amplifier is a much simpler
device to build and uses a relatively low pump frequency. In radar systems the nega
tiveresistance parametric amplifier may be the better choice, since the frequency re
quired by the system may be higher than the X band. However, since the parametric
amplifier is complicated in fabrication and expensive in production, there is a ten
dency in microwave engineering to replace it with the GaAs metalsemiconductor
fieldeffect transistor (MESFET) amplifier in airborne radar systems.
REFERENCES
[I] READ, W. T., A proposed highfrequency negativeresistance diode. Bell System Tech.
J., 37,401446 (1958)
[2] COLEMAN, D. J., JR., and S. M. SZE, A lownoise metalsemiconductormetal (MSM)
microwave oscillator. Bell System Tech. J., 50, 16951699, MayJune 1971.
[3] LEE, C. A., Ef AL., The Read diode, an avalanche, transittime, negativeresistance os
cillator. Appl. Phys. Letters, 6,89 (1965).
[4] JOHNSTON, R. L., B. C. DELOACH, and G. B. COHEN, A silicon diode microwave oscilla
tor. Bell System Tech. J., 44, 369372, February 1965.
[5] GILDEN, M., and M. E. HINES, Electronic tuning effects in the Read microwave
avalanche diode. IEEE Trans. on Electron Devices, ED13, 512, January 1966.
[6] HIESLMAIR, H., Ef AL., State of the art of solidstate and tube transmitters. Microwave
J., 26, No. 10,4648, October 1983.
[7] PRAGER, H. J., Ef AL., Highpower, highefficiency silicon avalanche diodes at ultra high
frequencies. Proc. IEEE (Letters), 55,586587, April 1967.
[8] CLORFEINE, A. S., Ef AL., A theory for the highefficiency mode of oscillation in
avalanche diodes. RCA Rev., 30, 397421, September 1969.
[9] DELOACH, B. C., JR., and D. L. SCHARFEfTER, Device physics of TRAPATT oscillators.
IEEE Trans. on Electron Devices, EDI7, 921, January 1970.
332 Avalanche TransitTime Devices Chap. 8
[10] LIU, S. G., and J. J. RISKA, Fabrication and performance of kilowatt Lband avalanche
diodes. RCA Rev., 31, 3, March 1970.
[II] KOSTICHACK, D. F., UHF avalanche diode oscillator providing 400 watts peak power and
75 percent efficiency. Proc. IEEE (Letters), 58, 12821283, August 1970.
[12] WILSON, W. E., Pulsed LSA and TRAPATT sources for microwave systems. Microwave
J., 14, No.8, 3341, August 1971.
[13] COLEMAN, D. J., JR., and S. M. SZE, A lownoise metalsemiconductormetal (MSM)
microwave oscillator. Bell System Tech. 1., 16751695, MayJune 1971.
[14] FARADAY, M., On a peculiar class of acoustical figures; and certain forms assumed by a
group of particles upon vibrating elastic surface. Phil. Trans. Roy. Soc. (London), 121,
299318, May 1831.
[15] loRD RAYLEIGH, and J. W. STRUTI, On the crispations of fluid resting upon a vibrating
support. Phil. Mag., 16, 5053, July 1883.
[16] VAN DER ZIEL, A., On the mixing properties of nonlinear capacitances. J. Appl. Phys.,
19,9991006, November 1948.
[17] LANDON, V. D., The use of ferrite cored coils as converters, amplifiers, and oscillators.
RCA Rev., 10,387396, September 1949.
[18] SUHL, H., Proposal for a ferromagnetic amplifier in the microwave range. Phys. Rev.,
106,384385, April 15, 1957.
[19] WEISS, M. T., A solidstate microwave amplifier and oscillator using ferrites. Phys Rev.,
107,317, July 1957.
[20] MANLEY, J. M., and H. E. ROWE, Some general properties of nonlinear elementsPt. I,
General energy relations. Proc. IRE, 44,904913, July 1956.
[21] BLACKWELL, L. A., and K. L. KOlZEBUE, SemiconductorDiode Parametric Amplifiers,
41,42,45,53,57,62,70. PrenticeHall, Inc., Englewood Cliffs, N.J., 1961.
SUGGESTED READINGS
CHANG, K. K. N., Parametric and Tunnel Diodes. PrenticeHall, Inc., Englewood Cliffs,
N.J., 1964.
DEloACH, B. C., and D. L. SCHARFETIER, Device physics of TRAPATT oscillators. IEEE
Trans. on Electron Devices, ED17, No.1, 921, January 1970.
EASTMAN, L. F., Gallium Arsenide Microwave Bulk and TransitTime Devices. Artech House,
Dedham, Mass., 1973.
HADDAD, G. I., ed., Avalanche TransitTime Devices. Artech House, Dedham, Mass., 1973.
Chap. 8 Problems 333
HADDAD, G. I., ET AL., Basic principles and properties of avalanche transittime devices. IEEE
Trans. on Microwave Theory and Techniques, MTT18, No. 11, 752772, November
1970.
MILNES, A. G., Semiconductor Devices and Integrated Electronics. Van Nostrand Reinhold
Company, New York, 1980.
PARKER, D., TRAPATT oscillations in a pin avalanche diode. IEEE Trans. on Electron
Devices, ED18, No.5, 281293, May 1971.
SZE, S. M., Microwave avalanche diodes. IEEE Proc., 59, No.8, 11401171, August 1971.
PROBLEMS
Avalanche TransitTime Devices
81. Spell out the following abbreviated terms: IMPATT, TRAPATT, and BARITT.
82. Derive Eq. (829).
83. Describe the operating principles of the Read diode, IMPATT diode, TRAPATT diode,
and BARITT diode.
84. An IMPATT diode has a drift length of 2 p,m. Determine: (a) the drift time of the car
riers and (b) the operating frequency of the IMPATT diode.
85. A Kuband IMPATT diode has a pulsedoperating voltage of 100 V and a pulsed
operating current of 0.9 A. The efficiency is about 10%. Calculate:
a. The output power
b. The duty cycle if the pulse width is 0.01 ns and the frequency is 16 GHz
86. An MSiM BARITT diode has the following parameters:
Relative dielectric constant of Si:
Donor concentration:
Si length:
E
r
= 11.8
N = 3 X 10
21
m
3
L = 6.2 p,m
Calculate: (a) the breakdown voltage and (b) the breakdown electric field.
Parametric Devices
87. a. Describe the advantages and disadvantages of the parametric devices.
b. Describe the applications of the parametric amplifiers.
88. The figure of merit for a diode nonlinear capacitor in an upconverter parametric am
plifier is 8, and the ratio of the output (or idler) frequency fa over the signal frequency
j, is 8. The diode temperature is 300
o
K.
a. Calculate the maximum power gain in decibels.
b. Compute the noise figure F in decibels.
c. Determine the bandwidth (BW) for 'Y = 0.2.
334 Avalanche TransitTime Devices Chap. 8
89. A negativeresistance parametric amplifier has the following parameters:
Is = 2 GHz R; = I kO '"Y = 0.35
fp = 12 GHz R
g
= 1 KO
rQ = 10
j; = 10 GHz
R
T
, = IKO T
d
= 300
0
K
j; = Sf, R
T
; = 1 KO C = 0.01 pF
a. Calculate the power gain in decibels.
b. Compute the noise figure F in decibels.
c. Determine the bandwidth (BW).
Chapter 9
Microwave LinearBeam
Tubes (0 Type)
9·0 INTRODUCTION
We turn now to a quantitative and qualitative analysis of several conventional vac
uum tubes and microwave tubes in common use. The conventional vacuum tubes,
such as triodes, tetrodes, and pentodes, are still used as signal sources of low output
power at low microwave frequencies. The most important microwave tubes at
present are the linearbeam tubes (0 type) tabulated in Table 901. The paramount
otype tube is the twocavity klystron, and it is followed by the reflex klystron. The
helix travelingwave tube (TWT) , the coupledcavity TWT, the forwardwave am
plifier (FWA), and the backwardwave amplifier and oscillator (BWA and BWO) are
also 0 type tubes, but they have nonresonant periodic structures for electron inter
actions. The Twystron is a hybrid amplifier that uses combinations of klystron and
TWT components. The switching tubes such as krytron, thyratron, and planar triode
are very useful in laser modulation. Although it is impossible to discuss all such
tubes in detail, the common operating principles of many will be described.
The advent of linearbeam tubes began with the Heil oscillators [1] in 1935
and the Varian brothers' klystron amplifier [1] in 1939. The work was advanced by
the spacechargewave propagation theory of Hahn and Ramo [1] in 1939 and con
tinued with the invention of the helixtype travelingwave tube (TWT) by R.
Kompfner in 1944 [2]. From the early 1950s on, the low power output of linear
beam tubes made it possible to achieve high power levels, first rivaling and finally
surpassing magnetrons, the early sources of microwave high power. Subsequently,
several additional devices were developed, two of which have shown lasting impor
tance. They are the extended interaction klystron [3] and the Twystron hybrid am
plifier [4].
335
336 Microwave LinearBeam Tubes (0 Type) Chap. 9
TABLE 9·0·1 LINEAR BEAM TUBES (0 TYPE)
Linearbeam tubes (Otype)
I
I
Cavity
\
I
Slowwave structure
r__
I
_
Resonant
Reflex
Klystron
Forwardwave Backwardwave
~
In a linearbeam tube a magnetic field whose axis coincides with that of the
electron beam is used to hold the beam together as it travels the length of the tube.
otype tubes derive their name from the French TPO (tubes apropagation des
ondes) or from the word original (meaning the original type of tube). In these tubes
electrons receive potential energy from the dc beam voltage before they arrive in the
microwave interaction region, and this energy is converted into their kinetic energy.
In the microwave interaction region the electrons are either accelerated or deceler
ated by the microwave field and then bunched as they drift down the tube. The
bunched electrons, in turn, induce current in the output structure. The electrons then
give up their kinetic energy to the microwave fields and are collected by the
collector.
otype travelingwave tubes are suitable for amplification. At present, klystron
and TWT amplifiers can deliver a peak power output up to 30 MW (megawatts) with
a beam voltage on the order of 100 kV at the frequency of 10 GHz. The average
power outputs are up to 700 kW. The gain of these tubes is on the order of 30 to
70 dB, and the efficiency is from 15 to 60%. The bandwidth is from 1 to 8% for
klystrons and 10 to 15% for TWTs.
Since the early 1960s, predictions have continued that microwave tubes will be
displaced by microwave solidstate devices. This displacement has occurred only at
the lowpower and receiving circuit level of equipment. Microwave power tubes
continue, however, as the only choice for highpower transmitter outputs and are ex
pected to maintain this dominant role throughout the next generation and beyond.
Figure 901 and 902 show the CW power and peak power stateoftheart perfor
mances for various tube types [5].
The numbers by the data points represent efficiency in percent; the letter in
parentheses stands for the developer of the tube. Impressive gain has been made in
bandwidth of a single TWT device by Varian. More than 50 dB of gain is available
Figure 901 CW power stateofthe
art performance for various microwave
tubes. (After C. Hieslmair [5J. reprinted
by permission of Microwave Journal.)
12 (H)
GYROTRON (U)
•
015 (R) (S)
/PPM COUPLED
CAVITYTWT
AIR COOLED PPM _
HELIX TWT 
TWT(R)
t<
TWT(V)
(W)
o
DATA FROM PUBLISHED RESULTS:
HUGHES (H)
RAYTHEON (R)
SIEMENS IS)
THOMPSON CSF (C)
USSR (U)
VARIAN (V) HDl
WATKINS JOHNSON (W) OROTRON
\
\ 16 EIA (V)
\\/Br'u?
,,\ 0
\ '"
\ \
\ '"
\ \
FREQUENCY (GHz)
10'
o CFA
• TWT
6 KLYSTRON
• GYROTRON
CFA
10·
DATA FROM PUBLISHED RESULTS:
HUGHES (H)
RAYTHEON (R)
SIEMENS (S)
THOMPSON CSF (C)
USSR (U)
VARIAN (V)
10
3
L_...L......J.....JL...L...L.JU1,J_L_'''...L.J"'!7__..>..............
1 10
FREQUENCY IGHzl
Figure 902 Peak power stateofthe
art performance for various microwave
tubes. (After C. Hieslmair [5J. reprinted
by permission of Microwave Journal.)
337
338
Microwave LinearBeam Tubes (0 Type) Chap. 9
in a 93 to 95GHz TWT at the 50watt average level by Hughes, and 2kW peak
power at 30dB gain is provided by Varian. The most impressive power achieve
ments at very good efficiencies continue to occur in the gyrotron area. The Naval
Research Laboratory (NRL) reports results of work on a 30% bandwidth gyrotron
TWT. Tube reliability continues to improve as a result of lowtemperature cathode
technology, better materials, and quality control in manufacture.
91 CONVENTIONAL VACUUM TRIODES, TETRODES, AND
PENTODES
Conventional vacuum triodes, tetrodes, and pentodes are less useful signal sources at
frequencies above 1 GHz because of leadinductance and interelectrodecapacitance
effects, transitangle effects, and gainbandwidth product limitations. These three ef
fects are analyzed in detail in the following sections.
911 LeadInductance and
Intere/ectrodeCapacitance Effects
At frequencies above 1 GHz conventional vacuum tubes are impaired by parasitic
circuit reactances because the circuit capacitances between tube electrodes and the
circuit inductance of the lead wire are too large for a microwave resonant circuit.
Furthermore, as the frequency is increased up to the microwave range, the real part
of the input admittance may be large enough to cause a serious overload of the input
circuit and thereby reduce the operating efficiency of the tube. In order to gain a bet
ter understanding of these effects, the triode ciruit shown in Fig. 911 should be
studied carefully.
+
+ +
+
lin
c
gk
'p
I
L C
Yo
"in R L
C
Yo
L
(a) (b)
Figure 911 Triode circuit (a) and its equivalent (b).
Figure 911(b) shows the equivalent circuit of a triode circuit under the as
sumption that the interelectrode capacitances and cathode inductance are the only
parasitic elements. Since C
gp
«i C
gk
and wL
k
«i l/(wC
gk
), the input voltage V
in
can
be written as
(911)
Sec. 9.1 Conventional Vacuum, Triodes, Tetrodes, and Pentodes 339
and the input current as
(912)
Substitution of Eq. (912) in Eq. (911) yields
V = tnO + jwLkgm)
In
The input admittance of the tube is approximately
Y
. = h = jwC _ 2
In l+'L
Vin JW kgm
(913)
(914)
(915)
(917)
in which wLkg
m
1 has been replaced. The inequality is almost always true, since
the cathode lead is usually short and is quite large in diameter, and the transconduc
tance gm is generally much less than one millimho.
The input impedance at very high frequencies is given by
1 . 1
Zin = 2  J 3L 2 C 2
W W k
The real part of the impedance is inversely proportional to the square of the fre
quency, and the imaginary part is inversely proportional to the third order of the
frequency. When the frequencies are above 1 GHz, the real part of the impedance
becomes small enough to nearly short the signal source. Consequently, the output
power is decreased rapidly. Similarly, the input admittance of a pentode circuit is ex
pressed by
Yin = + + (916)
where is the capacitance between the grid and screen, and its input impedance is
given by
1 . +
Zin =  } W3Uqkg;"
There are several ways to minimize the inductance and capacitance effects, such as a
reduction in lead length and electrode area. This minimization, however, also limits
the powerhandling capacity.
9·1·2 Transit·Angle Effects
Another limitation in the application of conventional tubes at microwave frequencies
is the electron transit angle between electrodes. The electron transit angle is defined
as
wd
== WT
g
= 
Vo
where T
g
= dlvo is the transit time across the gap
d = separation between cathode and grid
Vo = 0.593 X is the velocity of the electron
V
o
= dc voltage
(918)
340 Microwave LinearBeam Tubes (0 Type) Chap. 9
(919)
When frequencies are below microwave range, the transit angle is negligible.
At microwave frequencies, however, the transit time (or angle) is large compared to
the period of the microwave signal, and the potential between the cathode and the
grid may alternate from 10 to 100 times during the electron transit. The grid poten
tial during the negative half cycle thus removes energy that was given to the electron
during the positive half cycle. Consequently, the electrons may oscillate back and
forth in the cathodegrid space or return to the cathode. The overall result of transit
angle effects is to reduce the operating efficiency of the vacuum tube. The degenerate
effect becomes more serious when frequencies are well above I GHz. Once electrons
pass the grid, they are quickly accelerated to the anode by the high plate voltage.
When the frequency is below I GHz, the output delay is negligible in compari
son with the phase of the grid voltage. This means that the transadmittance is a large
real quantity, which is the usual transconductance gm . At microwave frequencies the
transit angle is not negligible, and the transadmittance becomes a complex number
with a relatively small magnitude. This situation indicates that the output is de
creased.
From the preceding analysis it is clear that the transitangle effect can be mini
mized by first accelerating the electron beam with a very high dc voltage and then
velocitymodulating it. This is indeed the principal operation of such microwave
tubes as klystrons and magnetrons.
9·1·3 Gain·Bandwidth Product Limitation
In ordinary vacuum tubes the maximum gain is generally achieved by resonating the
output circuit as shown in Fig. 912. In the equivalent circuit (see Fig. 912) it is
assumed that r
p
~ wL
k
• The load voltage is given by
V  gmV
g
e  G + j[wC  1/(wL}]
where G = I/r
p
+ l/R
r
p
= plate resistance
R = load resistance
L, C = tuning elements
The resonant frequency is expressed by
I
f,. = 27TVLC
............ro+
(911O)
Figure 912 Outputtuned circuit of a
pentode.
Sec. 9.2 Klystrons
341
and the maximum voltage gain A
max
at resonance by
(9111)
Since the bandwidth is measured at the halfpower point, the denominator of Eq.
(919) must be related by
1
G = wC 
wL
The roots of this quadratic equation are given by
WI = 
W2 = + r+
Then the bandwidth can be expressed by
(9112)
(9113)
(9114)
G
BW = W2  WI =
C
(
G)2 1
for 
2C LC
(9115)
Hence the gainbandwidth product of the circuit of Fig. 912 is
(9116)
It is important to note that the gainbandwidth product is independent of frequency.
For a given tube, a higher gain can be achieved only at the expense of a narrower
bandwidth. This restriction is applicable to a resonant circuit only. In microwave
devices either reentrant cavities or slowwave structures are used to obtain a possible
overall high gain over a broad bandwidth.
92 KLYSTRONS
The twocavity klystron is a widely used microwave amplifier operated by the princi
ples of velocity and current modulation. All electrons injected from the cathode ar
rive at the first cavity with uniform velocity. Those electrons passing the first cavity
gap at zeros of the gap voltage (or signal voltage) pass through with unchanged ve
locity; those passing through the positive half cycles of the gap voltage undergo an
increase in velocity; those passing through the negative swings of the gap voltage un
dergo a decrease in velocity. As a result of these actions, the electrons gradually
bunch together as they travel down the drift space. The variation in electron velocity
in the drift space is known as velocity modulation. The density of the electrons in
the second cavity gap varies cyclically with time. The electron beam contains an ac
component and is said to be currentmodulated. The maximum bunching should oc
cur approximately midway between the second cavity grids during its retarding
342 Microwave LinearBeam Tubes (0 Type) Chap. 9
phase; thus the kinetic energy is transferred from the electrons to the field of the sec
ond cavity. The electrons then emerge from the second cavity with reduced velocity
and finally terminate at the collector. The charateristics of a twocavity klystron am
plifier are as follows:
1. Efficiency: about 40%.
2. Power output: average power (CW power) is up to 500 kW and pulsed power is
up to 30 MW at 10 GHz.
3. Power gain: about 30 dB.
Figure 921 shows the present state of the art for U.S. highpower klystrons.
Figure 922 shows the schematic diagram of a twocavity klystron amplifier. The
cavity close to the cathode is known as the buncher cavity or input cavity, which ve
locitymodulates the electron beam. The other cavity is called the catcher cavity or
output cavity; it catches energy from the bunched electron beam. The beam then
passes through the catcher cavity and is terminated at the collector. The quantitative
analysis of a twocavity klystron can be described in four parts under the following
assumptions:
1. The electron beam is assumed to have a uniform density in the cross section of
the beam.
2. Spacecharge effects are negligible.
3. The magnitude of the microwave signal input is assumed to be much smaller
than the dc accelerating voltage.
9·2·1 Reentrant Cavities
At a frequency well below the microwave range, the cavity resonator can be repre
sented by a lumpedconstant resonant circuit. When the operating frequency is in
creased to several tens of megahertz, both the inductance and the capacitance must
be reduced to a minimum in order to maintain resonance at the operating frequency.
Ultimately the inductance is reduced to a minimum by short wire. Therefore the
reentrant cavities are designed for use in klystrons and microwave triodes. A
reentrant cavity is one in which the metallic boundaries extend into the interior of
the cavity. Several types of reentrant cavities are shown in Fig. 923. One of the
commonly used reentrant cavities is the coaxial cavity shown in Fig. 924.
It is clear from Fig. 924 that not only has the inductance been considerably
decreased but the resistance losses are markedly reduced as well, and the shelf
shielding enclosure prevents radiation losses. It is difficult to calculate the resonant
frequency of the coaxial cavity. An approximation can be made, however, using
transmissionline theory. The characteristic impedance of the coaxial line is given
by
Zo = _1 ~ en!!.
21' ' J ~ a
ohms (92 1)
f<
......
''
....
I
~
u
...
......
......
.... ..
.......
~ ,
If'
....
~
..... ....

.......
20
10
;:
::;:
,..:
:>
"
>
:>
0
cr
w
;:
0
"
'"
~
0.8
0.6
0.5
0.4
0.3
0.2
0.05 ~ . 1 0.2 0.4 0.6 1 2
FREQUENCY, GHz
10 20 30
Figure 9·21 State of the art for U.S. highpower klystrons.
I"IIL...... . , I
Buncher cavity Catcher cavity
Anode
v o ~
Cathode
I
Drift space
.JCollector
rr
__ v(tl)
j(tl) __ I
I
I

T

=E:3: =
 
~ I I
I
I
I
Bunched
0
+ electron
V
g
beam
o d
L+d L+2d
H
Distance scale
I+;
Time scale

to t
l
t
2
t
3
=
Figure 9·22 Twocavity klystron amplifier.
rn
8
(a) (b) (c)
(d) (e)
Figure 9·2·3 Reentrant cavities. (a) Coaxial cavity. (b) Radial cavity. (c) Thnable cavity,
(d) Toroidal cavity. (c) Butterfly cavity.
344
(a) Coaxial cavity
Microwave LinearBeam Tubes (0 Type)
(b) Crosssection of
coaxial cavity
Chap. 9
Figure 924 Coaxial cavity and its equivalent.
The coaxial cavity is similar to a coaxial line shorted at two ends and joined at the
center by a capacitor. The input impedance to each shorted coaxial line is given by
Zin = jZo tan (j3 e)
where eis the length of the coaxial line.
Substitution of Eq. (921) in (922) results in
Zin = i_I ~ en ~ tan(j3 e)
211' V ~ a
The inductance of the cavity is given by
L = 2X
in
= _1_ ~ en ~ tan(j3 e)
w 11'W \ j ~ a
and the capacitance of the gap by
(922)
(923)
(924)
(925)
€11'a
Z
Cg=d
At resonance the inductive reactance of the two shorted coaxial lines in series is
equal in magnitude to the capacitive reactance of the gap. That is, wL = l/(wC
g
).
Thus
dv
tan(j3e) = waZen(b/a) (926)
where v = l / ~ is the phase velocity in any medium.
The solution to this equation gives the resonant frequency of a coaxial cavity.
Since Eq. (926) contains the tangent function, it has an infinite number of solu
tions with larger values of frequency. Therefore this type of reentrant cavity can
support an infinite number of resonant frequencies or modes of oscillation. It can be
shown that a shorted coaxialline cavity stores more magnetic energy than electric
energy. The balance of the electric stored energy appears in the gap, for at reso
nance the magnetic and electric stored energies are equal.
Sec. 9.2 Klystrons 345
The radial reentrant cavity shown in Fig. 925 is another commonly used
reentrant resonator. The inductance and capacitance of a radial reentrant cavity is
expressed by
L = J.Le
21T' a
C
 [1T'a
2
4 [) 0.765 ]
 Eo   a 1n r:::::;:===;====;=;;
d Ve
2
+ (b  a)2
The resonant frequency [1] is given by
f, = C {ae [l:. _ en 0.765 ]
r 2d e Ve
2
+ (b  a)Z a
where c = 3 X 10
8
mls is the velocity of light in a vacuum.
(927)
(928)
(929)
2b t
2a
Id
1
!I·!I
Q •
Figure 925 Radial reentrant cavity.
922 VelocityModulation Process
(9210) mls
When electrons are first accelerated by the high dc voltage V
o
before entering the
buncher grids, their velocity is uniform:
V
2evo
6 r.;
Vo = ;;: = 0.593 x 10 V Vo
In Eq. (9210) it is assumed that electrons leave the cathode with zero velocity.
When a microwave signal is applied to the input terminal, the gap voltage between
the buncher grids appears as
V
s
= VI sin (wt) (9211)
where VI is the amplitude of the signal and VI V
o
is assumed.
In order to find the modulated velocity in the buncher cavity in terms of either
the entering time to or the exiting time tl and the gap transit angle ()g as shown in
Fig. 922 it is necessary to determine the average microwave voltage in the buncher
gap as indicated in Fig. 926.
Since VI V
o
, the average transit time through the buncher gap distance d is
d
T =  = tl  to
Vo
(9212)
346 Microwave LinearBeam Tubes (0 Type) Chap. 9
v, v, = VI sin wt to tl
: i Buncher grids
Jd*
I I
I I
I
o
Figure 926 Signal voltage in the
buncher gap.
The average gap transit angle can be expressed as
wd
{}g = WT = W(tl  to) = 
Vo
(9213)
The average microwave voltage in the buncher gap can be found in the following
way:
Let
and
1 It' V
<Vs> =  VI sin(wt)dt = __I [COS(Wtl)  cos(wto)]
T WT
to
= [COS(wt
o
)  cos ( Wo + ::) ]
wd {}g
wto +  = wto +  = A
2vo 2
wd = {}g = B
2vo 2
(9214)
(9215)
Then using the trigonometric identity that cos (A  B)  cos (A + B) = 2 sin A
sin B, Eq. (9214) becomes
(
>
_ V sin [wd/2
v
o)] . ( Wd) _ V sin ({}g/2) . ( (}g)
V
s
 I wd/(2
v
o) sm wto + 2vo  1 {}g/2 sm wto + "2
It is defined as
{3i == sin [wd/(
2v
o)] = sin ((}g/2)
wd/(2vo) {}g/2
(9216)
Note that {3i is known as the beamcoupling coefficient of the input cavity gap (see
Fig. 927).
It can be seen that increasing the gap transit angle {}g decreases the coupling
between the electron beam and the buncher cavity; that is, the velocity modulation
Sec. 9.2 Klystrons
347
11'
'\
,
~
\
\
'\
I/"~
1\ 7
f'~
....
o
1.0
0.8
0.6
0.2
0.40
Figure 927 Beamcoupling coefficient versus gap transit angle.
of the beam for a given microwave signal is decreased. Immediately after velocity
modulation, the exit velocity from the buncher gap is given by
(9217)
where the factor {3i VI/V
o
is called the depth of velocity modulation.
Using binomial expansion under the assumption of
(9218)
Eq. (9217) becomes
( )
[
{3iV
t
. ( f}g)]
V tl = Vo 1 + 2V
o
sm wto + "2
(9219)
Equation (9219) is the equation of velocity modulation. Alternatively, the equation
of velocity modulation can be given by
)
[
{3iV
I
• ( f}g)]
V(tl = Vo 1 + 2V
o
sm wtt  "2
(9220)
348
9·2·3 Bunching Process
Microwave LinearBeam Tubes (0 Type) Chap. 9
Once the electrons leave the buncher cavity, they drift with a velocity given by Eq.
(9219) or (9220) along in the fieldfree space between the two cavities. The ef
fect of velocity modulation produces bunching of the electron beamor current
modulation. The electrons that pass the buncher at V
s
= 0 travel through with un
changed velocity Vo and become the bunching center. Those electrons that pass the
buncher cavity during the positive half cycles of the microwave input voltage V
s
travel faster than the electrons that passed the gap when V
s
= O. Those electrons that
pass the buncher cavity during the negative half cycles of the voltage V
s
travel slower
than the electrons that passed the gap when V
s
= O. At a distance of !1L along the
beam from the buncher cavity, the beam electrons have drifted into dense clusters.
Figure 928 shows the trajectories of minimum, zero, and maximum electron ac
celeration.
z
AL
Buncher
grid 0
Figure 928 Bunching distance.
The distance from the buncher grid to the location of dense electron bunching
for the electron at tb is
!1L = VO(td  tb)
Similarly, the distances for the electrons at t
a
and t
c
are
!1L = Vrnin(td  ta) = Vrnin(td  tb + ;:)
!1L = Vrnax(td  tc) = vrnax(td  tb  ;:)
From Eq. (9219) or (9220) the minimum and maximum velocities are
Vrnin = VO(1 _
(9221)
(9222)
(9223)
(9224)
Sec. 9.2 Klystrons 349
(9226)
(9227)
vrnax = vo( I + ~ i ~ l ) (9225)
Substitution of Eqs. (9224) and (9225) in Eqs. (9222) and (9223), respec
tively, yields the distance
(
[
7T {3i VI (3; VI 7T ]
!J.L = Vo td  tb) + Vo 2w  Vo 2V
o
(td  tb)  Vo 2V
o
2w
and
[
7T {3; VI (3i VI 7T]
/iL = VO(td  tb) + vo 2w + Vo 2V
o
(td  tb) + Vo 2Vo 2w
The necessary condition for those electrons at t
a
, tb, and t
c
to meet at the same dis
tance !J.L is
(9228)
and
(9229)
Consequently,
and
AL _ 7TVo
u  vo
W{3iV
I
(9230)
(923 I)
T = tz  tl = v tl) = TO[ I  ~ ~ I sin (wt l  i)] (9232)
where the binomial expansion of (I + xt I for Ix I ~ I has been replaced and
To = L/vo is the dc transit time. In terms of radians the preceding expression can be
written
It should be noted that the mutual repulsion of the space charge is neglected,
but the qualitative results are similar to the preceding representation when the effects
of repulsion are included. Furthermore, the distance given by Eq. (923 I) is not the
one for a maximum degree of bunching. Figure 929 shows the distancetime plot
or Applegate diagram.
What should the spacing be between the buncher and catcher cavities in order
to achieve a maximum degree of bunching? Since the drift region is field free, the
transit time for an electron to travel a distance of L as shown in Fig. 922 is given
by
wT = wtz  Wtl = ()o  X sin (wt l  i) (9233)
350
Catcher gap
Buncher gap
where
Microwave LinearBeam Tubes (0 Type)
Acceleration Outputgap
~
~
Figure 929 Applegate diagram.
wL
0
0
=  = 21TN
vo
Chap. 9
(9234)
is the dc transit angle between cavities, N is the number of electron transit cycles in
the drift space, and
X == ~ ~ l 00 (9235)
is defined as the bunching parameter of a klystron.
At the buncher gap a charge dQo passing through at a time interval dto is given
by
dQo = lodto (9236)
where 1
0
is the dc current. From the principle of conservation of charges this same
amount of charge dQo also passes the catcher at a later time interval dt2. Hence
loldtol = i 2 1 dt2 I
(9237)
(9238)
where the absolute value signs are necessary because a negative value of the time ra
tio would indicate a negative current. Current i
2
is the current at the catcher gap.
Rewriting Eq. (9232) in terms of Eq. (9219) yields
[
{3iV
1
• ( Og)]
t2 = to + T + To 1  2V
o
sm wto + "2
Alternatively,
wt2  (00 + i) = (wto + i)  X sin (wto + i) (9239)
where (wto + Og/2) is the buncher cavity departure angle and wt2  (0
0
+ Og/2) is
the catcher cavity arrival angle. Figure 9210 shows the curves for the catcher cav
Sec. 9.2 Klystrons 351
+7r r       , ;        ,    ~    ......
+ ~
2
Q)
bh
c::
'"
;
....
>
","IN
. ~
+
>
0
8
. ~
~
'"
u
...
M
Q)
'3 ..c::
~
'"
U
7r
2
o
Figure 9210 Catcher arrival angle
versus buncher departure angle.
8,
wlo + 2
Buncher cavity departure angle
 7r ......__J'__J I. l
 7r 7r
2
ity arrival angle as a function of the buncher cavity departure angle in terms of the
bunching parameter X.
Differentiation of Eg. (9238) with respect to to results in
(9240)
The current arriving at the catcher cavity is then given as
(9241)
In terms of t2 the current is
(9242)
In Eg. (9242) the relationsip of t2 = to + T + To is usednamely, Wt2 = wto +
WT + wT
o
= wto + 01( + 0
0
. Figure 9211 shows curves of the beam current i
2
(t2)
as a function of the catcher arrival angle in terms of the bunching parameter X.
352 Microwave LinearBeam Tubes (0 Type) Chap. 9
x=o
I
1r
o +1r
Catcher cavity arrival angles, wt
z
 (eo + ~ g )
Figure 9211 Beam current i
2
versus catcher cavity arrival angle.
The beam current at the catcher cavity is a periodic waveform of period 2'TT/ w
about dc current. Therefore the current i
z
can be expanded in a Fourier series and so
i
z
= ao + L [an cos (nwtz) + b
n
sin (nwtz)]
n=l
(9243)
(9246)
(9245)
(9247)
(9244)
where n is an integer, excluding zero. The series coefficients ao, an, and b
n
in Eq.
(9243) are given by the integrals
1 J'" ao = 2'TT i z d(wtz)
'"
1 f'"
an = ;. cos (nwtz) d (wtz)
'"
1 J'"
b
n
= ;. i
z
sin (nwtz) d(wtz)
'"
Substitution of Eqs. (9237) and (9239) in Eq. (9244) yields
1 J'" ao = 27T /0 d (wto) = /0
'"
an = ; J'" /0 cos [(nwto + n8
g
+ nOo) + nXsin (wto + ~ g ) ] d(wto)
'"
bn = ; J'" /0 sin [(nwto + n8g + nOo) + nX sin (wto + i)]d (wto)
'"
By using the trigonometric functions
cos (A ± B) = cos A cos B =+ sin A sin B
and
sin (A ± B) = sin A cos B ± cos A sin B
Sec. 9.2 Klystrons 353
the two integrals shown in Eqs. (9240) and (9241) involve cosines and sines of a
sine function. Each term of the integrand contains an infinite number of terms of
Bessel functions. These are
cos [nx sin (wto + i)] = 2Jo(nX) + 2[J2(nX) cos 2(wto + i)]
+ 2[J4(nX) cos 4(wto + i) ]
and
+ ...
sin [nx sin (wto + i)] = 2[Jl(nX) sin (wto + i)]
+ 2[h(nX) sin 3(wto + i) ]
+ ...
(9248)
(9249)
If these series are substituted into the integrands of Eqs. (9246) and (9247), re
spectively, the integrals are readily evaluated term by term and the series
coefficients are
an = 2/
o
J
n
(nX) cos (nO
g
+ nOo)
b
n
= 2/
o
J
n
(nX) sin (nlJ
g
+ nlJ
o
)
(9250)
(9251)
where JinX) is the nthorder Bessel function of the first kind (see Fig. 9212).
0.2
o.4L__L_..JL_..JL_..JL_l__
o 2 3 4 5 6 7
Argument of In(nX)
Figure 9212 Bessel functions In(nX).
354 Microwave LinearBeam Tubes (0 Type) Chap. 9
Substitution of Eqs. (9245), (9250), and (9251) in Eq. (9243) yields
the beam current i
2
as
i
2
= /0 + L 2/
0
1
n
(nX) cos [nw(t2  T  To)]
n=l
(9252)
The fundamental component of the beam current at the catcher cavity has a magni
tude
If = 2I
o
l
l
(X)
This fundamental component lj has its maximum amplitude at
X = 1.841
(9253)
(9254)
The optimum distance L at which the maximum fundamental component of current
occurs is computed from Eqs. (9234), (9235), and (9254) as
L. = 3.682vo V
o
(9255)
optImum Wf3i VI
It is interesting to note that the distance given by Eq. (9231) is approximately 15%
less than the result of Eq. (9255). The discrepancy is due in part to the approxima
tions made in deriving Eq. (9231) and to the fact that the maximum fundamental
component of current will not coincide with the maximun electron density along the
beam because the harmonic components exist in the beam.
9·2·4 Output Power and Beam Loading
The maximum bunching should occur approximately midway between the catcher
grids. The phase of the catcher gap voltage must be maintained in such a way that
the bunched electrons, as they pass through the grids, encounter a retarding phase.
When the bunched electron beam passes through the retarding phase, its kinetic
energy is transferred to the field of the catcher cavity. When the electrons emerge
from the catcher grids, they have reduced velocity and are finally collected by the
collector.
The induced current in the catcher cavity. Since the current induced by
the electron beam in the walls of the catcher cavity is directly proportional to the
amplitude of the microwave input voltage VI , the fundamental component of the in
duced microwave current in the catcher is given by
i
2ind
= f3
0
i
2
= f3
0
2I
o
l
l
(X) cOS[W(t2  T  To)] (9256)
where 130 is the beam coupling coefficient of the catcher gap. If the buncher and
catcher cavities are identical, then f3i = 130. The fundamental component of current
induced in the catcher cavity then has a magnitude
(9257)
Figure 9213 shows an output equivalent circuit in which R
sho
represents the wall
resistance of catcher cavity, R
B
the beam loading resistance, R
L
the external load re
sistance, and R
sh
the effective shunt resistance.
Sec. 9.2 Klystrons
355
Figure 9213 Output equivalent cir
cuit.
(9258)
(9259)
The output power delivered to the catcher cavity and the load is given as
p = (j3olzF R = {3olz V
2
oul 2 sh 2
where R
sh
is the total equivalent shunt resistance of the catcher circuit, including the
load, and V
2
is the fundamental component of the catcher gap voltage.
Efficiency of klystron. The electronic efficiency of the klystron amplifier is
defined as the ratio of the output power to the input power:
Effi
. Pout {30 lz V2
clency ==  = 
Pin 21
0
V
o
in which the power losses to the beam loading and cavity walls are included.
If the coupling is perfect, (30 = I, the maximum beam current approaches
1
2m3x
= 21
0
(0.582), and the voltage V
2
is equal to V
o
. Then the maximum electronic
efficiency is about 58%. In practice, the electronic efficiency of a klystron amplifier
is in the range of 15 to 30%. Since the efficiency is a function of the catcher gap
transit angle fJ
g
, Fig. 9214 shows the maximum efficiency of a klystron as a func
tion of catcher transit angle.
60
~ 50
C
Q)
~
~ 40
;>,
t)
::
Q)
'u 30
t::
'
Q)
E
E 20
'x
'"
:::;:
10
~
'"
\
\
"
'"
~
Catcher gap transit angle Og
1r
2
1r
21r
Figure 9214 Maximum efficiency of
klystron versus transit angle.
356 Microwave LinearBeam Tubes (0 Type) Chap. 9
(9260)
Mutual conductance of a klystron amplifier. The equivalent mutual con
ductance of the klystron amplifier can be defined as the ratio of the induced output
current to input voltage. That is
IG
m
I == i
Zind
= 2{3oloJ
I
(X)
VI VI
From Eq. (9235) the input voltage VI can be expressed in terms of the bunching
parameter X as
VI = 2V
o
X (9261)
{300
o
In Eq. (9261) it is assumed that {3o = {3;. Substitution of Eq. (9261) in Eq.
(9260) yields the normalized mutual conductance as
IG
m
I = (36 0
0
JI(X) (9262)
Go X
where Go = lo/Vo is the dc beam conductance. The mutual conductance is not a
constant but decreases as the bunching parameter X increases. Figure 9215 shows
the curves of normalized transconductance as a function of X.
15 ,...........,.,
g
tS
10
'" u
s::
co
...
u
;:l
""
s::
0
U
<Il
s::
co
...
...
""
'"
~ 5
e
...
0
z
(3000 VI
Bunching parameter X = 
2V
o
Figure 9215 Normalized trans
conductance versus bunching parameter.
Sec. 9.2 Klystrons
357
It can be seen from the curves that, for a small signal, the normalized
transconductance is maximum. That is,
IGml = {35U
o
Go 2
(9263)
(9264)
(9265)
For a maximum output at X = 1.841, the normalized mutual conductance is
IGml = O.316{3500
Go
The voltage gain of a klystron amplifier is defined as
A = IVzl _ {3o/zR
sh
= (350
0
J1(X) R
v  IVI I  VI R
o
X sh
where R
o
= Vo/l
o
is the dc beam resistance. Substitution of Eqs. (9257) and
(9261) in Eq. (9265) results in
(9266)
Power required to bunch the electron beam. As described earlier, the
bunching action takes place in the buncher cavity. When the buncher gap transit an
gle is small, the average energy of electrons leaving the buncher cavity over a cycle
is nearly equal to the energy with which they enter. When the buncher gap transit
angle is large, however, the electrons that leave the buncher gap have greater aver
age energy than when they enter. The difference between the average exit energy
and the entrance energy must be supplied by the buncher cavity to bunch the elec
tron beam. It is difficult to calculate the power required to produce the bunching ac
tion. Feenberg did some extensive work on beam loading [6]. The ratio of the power
required to produce bunching action over the dc power required to perform the elec
tron beam is given by Feenberg as
(9267)
where
The dc power is
Po = V5Go
(9268)
where Go = lo/V
o
is the equivalent electron beam conductance. The power given by
the buncher cavity to produce beam bunching is
(9269)
358 Microwave LinearBeam Tubes (0 Type) Chap. 9
where G
B
is the equivalent bunching conductance. Substitution of Eqs. (9268) and
(9269) in Eq. (9267) yields the normalized electronic conductance as
G
B
= R
o
= F(O ) (92 70)
Go R
B
g
Figure 9216 shows the normalized electronic conductance as a function of the
buncher gap transit angle. It can be seen that there is a critical buncher gap transit
angle for a minimum equivalent bunching resistance. When the transit angle Og is
3.5 rad, the equivalent bunching resistance is about five times the electron beam re
sistance. The power delivered by the electron beam to the catcher cavity can be ex
pressed as
v
2
V
2
V
2
V
2
_2_=_2_+_2 +_2
2R
sh
2R
sho
2R
B
2R
L
As a result, the effective impedance of the catcher cavity is
I I I I
=++
R
sh
R
sho
R
B
R
L
(9271)
(9272)
Finally, the loaded quality factor of the catcher cavity circuit at the resonant fre
quency can be written
I I I I
=++
QL Qo QB Qext
where QL = loaded quality factor of the whole catcher circuit
Qo = quality factor of the catcher walls
QB = quality factor of the beam loading
Qext = quality factor of the external load
(9273)
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 : 3.6 4.0
3.5
f
  
 

./""
............
/
'"
I
I
I
V
I
I
./
I
/
I
/
I
I
/
I
/ i
V
I
V
I

i
o
o
0.12
0.08
0.04
0.24
"
u
<::
~
g 0.16
"0
<::
o
u
u
'2
o
.::
u
" v
"0
"~
'"
E
Ci
Z
ef
 0.21
t,j"" 0.20
Bundler gap transit angle 8
g
• radians
Figure 9216 Normalized electronic conductance versus buncher gap transit
angle.
Sec. 9.2 Klystrons 359
Example 921: Klystron Amplifier
A twocavity klystron amplifier has the following parameters:
V
o
= 1000 V
1
0
= 25 rnA
R
o
= 40 kfl
f = 3 GHz
Gap spacing in either cavity:
Spacing between the two cavities:
Effective shunt impedance, excluding beam loading:
d = 1 mm
L = 4cm
R
sh
= 30 kfl
a. Find the input gap voltage to give maximum voltage V
2
•
b. Find the voltage gain, neglecting the beam loading in the output cavity.
c. Find the efficiency of the amplifier, neglecting beam loading.
d. Calculate the beam loading conductance and show that neglecting it was justified
in the preceding calculations.
Solution
a. For maximum V
2
, J1(X) must be maximum. This means J,(X) = 0.582 at
X = 1.841. The electron velocity just leaving the cathode is
Vo = (0.593 X 1 0 6 ) ~ = (0.593 X 10
6
)ViQ3 = 1.88 x W mls
The gap transit angle is
d 10
3
o = w = 21T(3 X 10
9
) 10
7
= 1 rad
8 Vo 1.88 x
The beamcoupling coefficient is
fJ. = fJ. = sin (08 /2) = sin (1/2) = 0.952
fJ' fJO 0
8
/2 1/2
The dc transit angle between the cavities is
L 4 X 10
2
0
0
= wT
o
= w = 21T(3 X 10
9
) 8 0
7
= 40 rad
Vo 1.8xl
The maximum input voltage V, is then given by
_ 2V
o
X _ 2(lQ3)(1.841) _ V
V
lmax
 {3iOO  (0.952)(40)  96.5
b. The voltage gain is found as
A = (35
0
0 J,(X) R = (0.952)2(40)(0.582)(30 X 10
3
) = 8 59
v R
o
X sh 4 X 10
4
x 1.841 . 5
c. The efficiency can be found as follows:
lz = 2/
0
J,(X) = 2 x 25 X 10
3
x 0.582 = 29.1 x 10
3
A
V
2
= {3olzR
sh
= (0.952)(29.1 x 10
3
)(30 x 10
3
) = 831 V
Effi
. n = {30/2V2 = (0.952)(29.1 x 10
3
)(831) = 4620t
Cle cy 2/
0
V
o
2(25 x 103)(103) . /0
360 Microwave LinearBeam Tubes (0 Type) Chap. 9
d. Calculate the beam loading conductance (refer to Fig. 9213). The beam load
ing conductance G
B
is
Go ( (J ) 25 X 10
6
G
B
="2 f31J  f30 cos; = 2 [(0.952)2  (0.952) cos (28.6°)]
= 8.8 X 10
7
mho
Then the beam loading resistance R
B
is
1
R
B
=  = 1.14 X 10
6
n
G
B
In comparison with R
L
and R
sho
or the effective shunt resistance R
sh
, the beam
loading resistance is like an open circuit and thus can be neglected in the preced
ing calculations.
9·2·5 State of the Art
Extended Interaction. The most common form of extended interaction has
been attained recently by coupling two or more adjacent klystron cavities. Figure
9217 shows schematically a fivesection extendedinteraction cavity as compared
to a singlegap klystron cavity.
(b)
Figure 9217 Comparison of a five
gap extended interaction' cavity with a
singlegap klystron cavity. (a) Fivegap
coupled cavity resonator. (b)Singlegap
klystron cavity. (After A. Staprans et al.
l7J; reprinted by permission of IEEE.)
High efficiency and large power. In the 1960s much effort was devoted to
improving the efficiency of klystrons. For instance, a 50kW experimental tube has
demonstrated 75% efficiency in the industrial heating band [8]. The VA884D
klystron is a fivecavity amplifier whose operating characteristics are listed in Table
921.
One of the betterknown highpeakpower klystrons is the tube developed
specifically for use in the 2mile Stanford Linear Accelerator [9] at Palo Alto, Cali
fornia. A cutaway view of the tube is shown in Fig. 9218. The operating character
istics of this tube are listed in Table 922.
The Varian CW superpower klystron amplifier VKC8269A as shown in Fig.
9219 has an output power of 500 kW (CW) at frequency of 2.114 GHz. Its power
Sec. 9.2 Klystrons
TABLE 9·2·1 VA884D OPERATING CHARACTERISTICS
361
Frequency
Power output
Gain
Efficiency
Electronic bandwidth (I dB)
Beam voltage
Beam current
5.96.45 GHz
14kW
52 dB
36%
75 MHz
16.5 kV
2.4 A
Figure 9218 Cutaway of 24MW
Sband permanentmagnetfocused
klystron. (Courtesy of Stanford Linear
Accelerator Center.)
TABLE 9·2·2 OPERATING CHARACTERISTICS OF THE
STANFORD LINEAR ACCELERATOR CENTER HIGHPOWER
KLYSTRON [9)
Frequency
RF pulse width
Pulse repetition rate
Peak power output
Beam voltage
Beam current
Gain
Efficiency
Weight of permanent (focusing) magnet
Electronic bandwidth (I dB)
2.856
2.5
60 to 360
24
250
250
50 to 55
about 36
363
20
GHz
/Ls
pps
MW
kV
A
dB
%
kg
MHz
362 Microwave LinearBeam Tubes (0 Type)
•
•
III
Chap. 9
Figure 9219 Photograph of Varian
VKC8269A CW superpower klystron
amplifier. (Courtesy of Varian Associ
ates, Inc.)
gain is 56 dB and efficiency is 50 percent. The beam voltage is 62 V (de) and the
beam current is 16.50 A (de).
Longlife improvement. A new longlife klystron amplifier tube ~ i t h a de
sign life in excess of ten years, three times the current design life, has been devel
oped by the Electron Dynamics Division of the Hughes Aircraft Company. Key to
the longlife klystron was the development of a method of reducing the operating
temperature of the tube's cathode. The cathode is made of porous tungsten impreg
nated with barium, calcium, and aluminum oxides. The new cathode is coated with
a layer of osmium ruthenium alloy that lowers its work function, which is the tem
perature necessary for electrons to be emitted. This temperature reduction cuts evap
oration of barium lOfold and extends the life of the cathode.
9·3 MULTICAVITY KLYSTRON AMPLIFIERS
The typical power gain of a twocavity klystron amplifier is about 30 dB. In order to
achieve higher overall gain, one way is to connect several twocavity tubes in cas
cade, feeding the output of each of the tubes to the input of the following one. Be
Sec. 9.3 Multicavity Klystron Amplifiers 363
RF Output
RF Input
Drift . . . =
tube
Intermediate cavities
Input
cavity
11o .. 1RFInteraction
Gap
Electron
beam
Heater
Magnet
coils
Figure 931 Schematic diagram of a fourcavity klystron amplifier. (Courtesy of
Varian Associates, Inc.)
sides using the multistage techniques, the tube manufacturers have designed and pro
duced multicavity klystron to serve the highgain requirement as shown in Fig.
931.
In a multicavity klystron each of the intermediate cavities, placed at a distance
of the bunching parameter X of 1.841 away from the previous cavity, acts as a
buncher with the passing electron beam inducing a more enhanced RF voltage than
the previous cavity, which in turn sets up an increased velocity modulation. The
spacing between the consecutive cavities would therefore diminish because of the re
quirement of X being 1.841 and an increasing velocity modulating RF voltage as the
beam progresses through the various cavities. Keeping the intercavity distance con
stant, an increasing beam voltage V
o
could be used in the subsequent cavities. Figure
932 shows the photograph of a fourcavity klystron amplifier.
931 BeamCurrent Density
When the twocavity klystron amplifier was discussed in Section 92, it was as
sumed that the spacecharge effect was negligible, and it was not considered because
of the assumed small density of electrons in the beam for lowpower amplifier. How
ever, when highpower klystron tubes are analyzed the electron density of the beam
is large and the forces of mutual repulsion of the electrons must be considered.
When the elecrons perturbate in the electron beam, the electron density consists of a
dc part plus an RF perturbation caused by the electron bunches. The spacecharge
forces within electron bunches vary with the size and shape of an electron beam. In
364 Microwave LinearBeam Tubes (0 Type) Chap. 9
Figure 932 Photograph of a four
cavity klystron amplifier VA890H.
(Courtesy of Varian Associates. Inc.)
(931)
(932)
an infinitely wide beam, the electric fields (and, thus, the spacecharge forces) are
constrained to act only in the axial direction. In a finite beam, the electric fields are
radial as well as axial with the result that the axial component is reduced in com
parison to the infinite beam. With reduced axial spacecharge force, the plasma fre
quency is reduced and the plasma wavelength is increased.
Mathematically, let the chargedensity and velocity perturbations be simple si
nusoidal variations in both time and position. They are
Charge density: p = B cos (j3eZ) cos (wqt + lJ)
Velocity perturbation: av = C sin (j3eZ) sin (wqt + lJ)
where B = constant of chargedensity perturbation
C = constant of velocity perturbation
f3e = ;0 is the dc phase constant of the electron beam
W
q
= Rw
p
is the pertubation frequency or reduced plasma frequency
R = w
q
/ W
p
is the spacecharge reduction factor and varies from 0 to 1
W
p
=  rep;; is the plasma frequency and is a function of the electronbeam
'VrnE;;
density
lJ = phase angle of oscillation
Sec. 9.3 Multicavity Klystron Amplifiers 365
The electron plasma frequency is the frequency at which the electrons will os
cillate in the electron beam. This plasma frequency applies only to a beam of infinite
diameter. Practical beams of finite diameter are characterized by plasma frequency
that is less than W
p
• This lower plasma frequency is called the reduced plasma fre
quency and is designated W
q
• The spacecharge reduction factor R is a function of
the beam radius r and the ratio n of the beamtunnel radius to the beam radius as
shown in Fig. 933 [10].
1.0
0.6
5.0
0.4
3.0
2.0
1.5
0.2
1.0
"
~
'"
3
0.1
II
Q:;
0.06
0.04
0.021t++Ijfl
10.0 5.0 2.0 1.0 0.5 0.2
0.0 I '_I._....II.......I......L..J....I...J...J...__.l.1_l..J'l......L...JU
0.1
Figure 933 Plasmafrequency reduction factor R [!OJ (Reprinted by permission
of Pergamon Press.)
As an example of the effect of the reduced spacecharge forces, if f3er =
wr/'V
o
= 0.85 and n = 2, the reduced factor is R = 0.5. Therefore, W
q
= 2w
p
,
which means that in a klystron the cavities would be placed twice as far apart as
would be indicated by infinitebeam calculation. The total charge density and elec
tron velocity are given by
Ptot = po + P
'V
tot
= 'V
o
+ 'V
where po = dc electron charge density
p = instantaneous RF charge density
'V
o
= dc electron velocity
'V = instantaneous electron velocity perturbation
(933)
(934)
366
Microwave LinearBeam Tubes (0 Type) Chap. 9
The total electron beamcurrent density can be written as
J
tot
=  J
o
+ J (935)
(936)
where J
o
= dc beamcurrent density
J = instantaneous RF beamcurrent perturbation
The instantaneous convection beamcurrent density at any point in the beam is
expressed as
J tol = Ptot "V
lot
= (Po + p)("V
o
+ "V)
= po"V
o
 Po"V + p"V
o
+ p"V
= J
o
+ J
where J = p"V
o
 po"V (937)
J
o
= po"V
o
is replaced
p"V = very small is ignored
In accordance with the law of conservation of electric charge, the continuity
equation can be written as
ap
V·J =
at
where J = p"V
o
 po"V is in positive z direction only. From
oj
 = wB sin (f3ez  wt) cos (wqt + 9)
az
+ {3epo C cos (f3ez  wt) sin (wqt + 0)
and
 ap = wB sin (f3e
z
 wt) cos (wqt + 0)
at
+ wqB cos (f3ez  wt) sin (wqt + 0)
then we have
(938)
(939)
(9310)
(9311)
(9312)
The beamcurrent density and the modulated velocity are expressed as [10]
J = "VoB cos (f3ez  wt) cos (wqt + 9)
+ Wq"VoB sin (f3ez  wt) sin (wqt + 0)
W
and
"V =  "V0 {32
i
VI cos (f3qz) sin (f3ez  wt)
V
o
(9313)
Sec. 9.3 Multicavity Klystron Amplifiers 367
In practical microwave tubes, the ratio of wq/w is much smaller than unity and the
second term in Eg. (9312) may be neglected in comparison with the first. Then we
obtain
J = "V0 B cos (f3ez  wt) cos (wqt + lJ)
Example 931: FourCavity Klystron
A fourcavity klystron VA828 has the following parameters:
(9314)
Beam voltage:
Beam current:
Operating frequency:
dc electron charge density:
RF charge density:
Velocity perturbation:
Compute:
va = 14.5 kV
1
0
= I.4A
f = 10 GHz
po = I 0 ~ 6 C/m
3
p = 1 0 ~ 8 C/m
3
'V = lOs m/s
a. The dc electron velocity
b. The dc phase constant
c. The plasma frequency
d. The reduced plasma frequency for R = 0.4
e. The dc beam current density
f. The instantaneous beam current density
Solution
a. The dc electron velocity is
'Va = 0.593 X 10
6
Y14.5 X J03 = 0.714 X 10
8
m/s
b. The dc phase constant is
27T X 10
10
{3e = 0.714 X 108 = 8.80 X 10
2
rads/m
c. The plasma frequency is
(
1011 X 10
6
W
p
= 1.759 x 8.854 x 10 )
1/2 __
12 1.41 X 10
8
rad/s
d. The reduced plasma frequency for R = 0.4 is
W
q
= 0.4 x 1.41 x 10
8
= 0.564 X 10
8
rad/s
e. The dc beam current density is
1
0
= 10
6
X 0.714 X 10
8
= 71.4 A/m
2
f. The instantaneous beam current density is
1 = 1 O ~ 8 x 0.714 X 10
8
 10
6
X lOS = 0.614 A/m
2
368 Microwave LinearBeam Tubes (0 Type) Chap. 9
(9316)
The electrons leaving the input gap of a klystron amplifier have a velocity
given by Eq. (9217) at the exit grid as
"V(tl) = "Va[l + ~ ~ I sin (WT)] (9315)
where VI = magnitude of the input signal voltage
d . h ..
T = "V
o
= t1  to IS t e transIt time
d = gap distance
Since the electrons under the influence of the spacecharge forces exhibit sim
ple harmonic motion, the velocity at a later time t is given by
"VIOe = "Va[ I + ~ ~ I sin (WT) cos (wpt  WPT)]
where W
p
= plasma frequency. The currentdensity equation may be obtained from
Eq. (9314) as
1 Jow .
J =  2 ~ f3i VI sm (f3qz) cos (f3ez  wt)
VoW
q
where f3q = ;: is the plasma phase constant.
Example 932: Operation of a FourCavity Klystron
A fourcavity CW klystron amplifier VA864 has the following parameters:
(9317)
Beam voltage:
Beam current:
Gap distance:
Operating frequency:
Signal voltage:
Beam coupling coefficient:
de electron beam current density:
Determine:
V
o
= 18 kV
/0 = 2.25 A
d = 1 cm
f = 10 GHz
VI = 10 V (rms)
f30 = f3i = 1
po = 10
8
C/m
3
a. The de electron velocity
b. The dc electron phase constant
c. The plasma frequency
d. The reduced plasma frequency for R = 0.5
e. The reduced plasma phase constant
f. The transit time across the input gap
g. The electron velocity leaving the input gap
Sec. 9.3 Multicavity Klystron Amplifiers 369
(9318)
Solution
a. The dc electron velocity is
'V
o
= 0.593 x 10
6
YI8 x 10
3
= 0.796 X 10
8
m/s
b. The dc electron phase constant is
f3e = 27T x 10
10
/(0.796 x JOB) = 7.89 X 10
2
rad/m
c. The plasma frequency is
W
p
= [1.759 X 1011 x 10
8
/(8.854 X 1O
12
)P
/
2 = 1.41 X 10
7
rad/s
d. The reduced plasma frequency is
W
q
= 0.5 x IAI x 10
7
= 0.705 X 10
7
rad/s
e. The reduced plasma phase constant is
f3q = 0.705 x 10
7
/(0.796 x JOB) = 0.088 rad/m
f. The transit time across the gap is
T = 10
2
/(0.796 x JOB) = 0.1256ns
g. The electron velocity leaving the input gap is
'V(tl) = 0.796 x 10
8
[1 + I x 10/(2 x 18 x 10
3
) sin (27T x 10
10
x 1.256
x 10
10
))
= 0.796 X 10
8
+ 2.21 X 10
4
m/s
932 Output Current and Output Power
of TwoCavity Klystron
If the two cavities of a twocavity klystron amplifier are assumed to be identical and
are placed at the point where the RF current modulation is a maximum, the magni
tude of the RF convection current at the output cavity for a twocavity klystron can
be written from Eq. (9317) as
I
. 1 I low I 1
t2 =  f3; VI
2 VOw
q
where VI = magnitude of the input signal voltage. Then the magnitudes of the in
duced current and voltage in the output cavity are equal to
(9319)
and
(9320)
370 Microwave LinearBeam Tubes (0 Type) Chap. 9
(9321)
(9322)
where 130 = 13i is the beam coupling coefficient
R
shl
= total shunt resistance of the output cavity in a twocavity klystron
amplifier including the external load
The output power delivered to the load in a twocavity klystron amplifier is
given by
_ I 1
2
 1 ( loW)2 41 12
P
OUI
 h R
shl
 4" VOW
q
130 VI R
shl
The power gain of a twocavity klystron amplifier is then expressed by
. _ Pout _ POUI _ 1( loW)2 4
Power gam  Pin  1 VI 12/ R
sh
 4" VOW
q
130 R
sh
• R
shl
where R
sh
= total shunt resistance of the input cavity. The electronic efficiency of a
twocavity klystron amplifier is
Tf = P
OUI
= Pout = ! (/
0
) (I VI Iw)213gRshl (9323)
Pin 1
0
V
o
4 V
o
VOw
q
Example 933: Characteristics of TwoCavity Klystron
A twocavity klystron has the following parameters:
Beam voltage:
Beam current:
Operating frequency:
Beam coupling coefficient:
dc electron beam current density:
Signal voltage:
Shunt resistance of the cavity:
Total shunt resistance including load:
Calculate:
V
o
= 20 kV
1
0
= 2 A
f = 8 GHz
{3, = {30 = I
po = 10
6
e/m
3
VI = 10 V (rms)
R'h = 10 kO
R = 30 kO
a. The plasma frequency
b. The reduced plasma frequency for R = 0.5
c. The induced current in the output cavity
d. The induced voltage in the output cavity
e. The output power delivered to the load
f. The power gain
g. The electronic efficiency
Solution
a. The plasma frequency is
W
p
= [1.759 X lOll X 10
6
/(8.854 X 10
12
)]1/2 = 1.41 X 10
8
rad/s
Sec. 9.3 Multicavity Klystron Amplifiers
b. The reduced plasma frequency is
W
q
= 0.5 x 1.41 x 10
8
= 0.705 x 10
8
rad/s
w/w
q
= 27T X 8 x 10
9
/(0.705 X 10
8
) = 713
c. The induced current in the output cavity is
I 2
liz I = 220 x J03 x 713 x F x 110 I = 0.3565 A
d. The induced voltage in the output cavity is
Iv
2
1= 1/2 1R
shl
= 0.357 x 30 x J03 = 10.71 kV
e. The output power delivered to the load is
P
ou
' = 1/21
2
R'hl = 0.357
2
X 30 X 10
3
= 3.82 kW
f. The power gain is
Gain = 1/4[2/(20 x 10
3
) x 713F X 1
4
x 10 X 10
3
X 30 X 10
3
= 3.83 X 10
5
= 55.8 dB
g. The electronic efficiency is
Pout 3.82 X 10
3
11 = Pin = 2 x 20 x J03 = 9.6%
371
9·3·3 Output Power of Four.Cavity Klystron
High power may be obtained by adding additional intermediate cavities in a two
cavity klystron. Multicavity klystrons with as many as seven cavities are commer
cially available, although the most frequently used number of cavities is four. Each
of the intermediate cavities functions in the same manner as in the twocavity
klystron amplifier.
Let us carry out a simplified analysis of the fourcavity klystron amplifier. The
four cavities are assumed to be identical and they have same unloaded Q and beam
coupling coefficient {3i = {3o. The two intermediate cavities are not externally
loaded, but the input and output cavities are matched to their transmission lines. If VI
is the magnitude of the input cavitygap voltage, the magnitude of the RF convection
current density injected into the first intermediate cavity gap is given by Eg. (93
17). The induced current and voltage in the first intermediate cavity are given by
Eqs. (9319) and (9320). This gap voltage of the first intermediate cavity pro
duces a velocity modulation on the beam in the second intermediate cavity. The RF
convection current in the second intermediate cavity can be written with IVI I re
placed by Iv
2
1. That is,
I
. I 1 low I I
13 = 2 v. {3o V2
oW
q
= ! (low )2{331 V IR
4V.
Olsh
oWq
(9324)
372
Microwave LinearBeam Tubes (0 Type) Chap. 9
(9325)
The output voltage of the second intermediate cavity is then given by
1v3 1= /301 i3 1Rsh
= 1. ( low )2 Q41 V IR
2
4
If tJO I sh
YoW
q
This voltage produces a velocity modulation again and is converted into an RF con
vection current at the output cavity for fourcavity klystron as
and
I
' I 1 low 1 I
14 = 2 U /3; V3
YOW
q
_ I ( loW)3 51 1 2
"8 VOw
q
/30 VI R
sh
(9326)
(9327)
(9328)
(9329)
Ih I = /301 i
4
/= ~ ( ~ : : J 3 /381 VIIR;h
The output voltage is then
1v41= 1141R
sh'
= ~ ( ~ : : J 3 /381 VI IR;hR
shl
The output power from the output cavity in a fourcavity klystron amplifier can be
expressed as
_ I 1
2
 1 (loW)6
12
1 12 4 2
P
OUI
 1
4
R
shl
 64 VOW
q
/30 VI RshRshl
where R
shl
= total shunt resistance of the output cavity including the external load.
The multicavity klystrons are often operated with their cavities staggertuned
so as to obtain a greater bandwidth at some reduction in gain. In highpower
klystrons, the cavity grids are omitted, because they would burn up during beam in
terception. Highpower klystron amplifiers with a power gain of 40 to 50 dB and a
bandwidth of several percent are commercially available.
Example 934: Output Power of FourCavity Klystron
A fourcavity klystron has the following parameters:
Beam voltage:
Beam current:
Operating frequency:
Beam coupling coefficient:
dc electron beam current density:
Signal voltage:
Shunt resistance of cavity:
Total shunt resistance including load:
V
o
= 10 kV
1
0
= 0.7 A
f = 4 GHz
f3; = f30 = I
po = 5 X 10
5
e/m
3
VI = 2 V (rms)
R
sh
= 10 k!1
R
shl
= 5 k!1
Sec. 9.4 Reflex Klystrons 373
Determine:
a. The plasma frequency
b. The reduced plasma frequency for R = 0.6
c. The induced current in the output cavity
d. The induced voltage in the output cavity
e. The output power delivered to the load
Solution
a. The plasma frequency is
[
5 X 10
5
]1/2
Wp = 1.759 X 1011 x 8.854 x 10 12 = 0.997 x
10
9
rad/s
b. The reduced plasma frequency is
W
q
= 0.6 x 0.997 x 10
9
= 0.598 X 10
9
rad/s
w/w
q
= 27T X 4 x 10
9
/(0.598 X 10
9
) = 42.03
c. The induced current in the output cavity is
I (07 )3
1/41 =  ~ x 42.03 X 1
6
x 121 x (10 x W)2
8 10
= 0.6365 A
d. The induced voltage in the output cavity is
Iv41= 1/41Rshl = 10.63651 x 5 x 10
3
= 3.18 kV
e. The output power is
Pout = 1/41
2
R
shl
= 10.6365 J2 x 5 x W = 2.03 kW
9·4 REFLEX KLYSTRONS
If a fraction of the output power is fed back to the input cavity and if the loop gain
has a magnitude of unity with a phase shift of multiple 27T, the klystron will oscil
late. However, a twocavity klystron oscillator is usually not constructed because,
when the oscillation frequency is varied, the resonant frequency of each cavity and
the feedback path phase shift must be readjusted for a positive feedback. The reflex
klystron is a singlecavity klystron that overcomes the disadvantages of the two
cavity klystron oscillator. It is a lowpower generator of 10 to 500mW output at a
frequency range of I to 25 GHz. The efficiency is about 20 to 30%. This type is
widely used in the laboratory for microwave measurements and in microwave receiv
ers as local oscillators in commercial, military, and airborne Doppler radars as well
as missiles. The theory of the twocavity klystron can be applied to the analysis of
374 Microwave LinearBeam Tubes (0 Type) Chap. 9
the reflex klystron with slight modification. A schematic diagram of the reflex
klystron is shown in Fig. 941.
The electron beam injected from the cathode is first velocitymodulated by the
cavitygap voltage. Some electrons accelerated by the accelerating field enter the re
peller space with greater velocity than those with unchanged velocity. Some elec
trons decelerated by the retarding field enter the repeller region with less velocity.
All electrons turned around by the repeller voltage then pass through the cavity gap
in bunches that occur once per cycle. On their return journey the bunched electrons
pass through the gap during the retarding phase of the alternating field and give up
their kinetic energy to the electromagnetic energy of the field in the cavity. Oscilla
tor output energy is then taken from the cavity. The electrons are finally collected by
the walls of the cavity or other grounded metal parts of the tube. Figure 942 shows
an Applegate diagram for the 1 ~ mode of a reflex klystron.
9·4·1 Velocity Modulation
The analysis of a reflex klystron is similar to that of a twocavity klystron. For sim
plicity, the effect of spacecharge forces on the electron motion will again be ne
glected. The electron entering the cavity gap from the cathode at z = 0 and time to
is assumed to have uniform velocity
Vo = 0.593 X 1 0 6 ~ (941)
The same electron leaves the cavity gap at z = d at time tl with velocity
v(tl) = vo[1 + f 3 ; ~ 1 sin (wtl  i)] (942)
This expression is identical to Eq. (9217), for the problems up to this point are
identical to those of a twocavity klystron amplifier. The same electron is forced
back to the cavity z = d and time t2 by the retarding electric field E, which is given
by
V
r
+ V
o
+ VI sin (wt)
E = ''
L
(943)
(945)
This retarding field E is assumed to be constant in the z direction. The force equa
tion for one electron in the repeller region is
m d
2
z = eE = eV
r
+ V
o
(944)
dt
2
L
where E =  VV is used in the z direction only, V
r
is the magnitude of the repeller
voltage, and IVI sin wt I ~ (Vr + V
o
) is assumed.
Integration of Eq. (944) twice yields
dz _ e(Vr + Vo) Jt d _ e(Vr + Vo)(  ) K
  t  t tl + I
dt mL II mL
Sec. 9.4 Reflex Klystrons
Repeller
V
s
= VI sin wt
V,
+ 
t
O
tl,t2
:. z
L +d
375
time for electron entering cavity gap at z = 0
time for same electron leaving cavity gap at z = d
time for same electron returned by retarding field
z = d and collected on walls of cavity
Figure 941 Schematic diagram of a
reflex klystron.
Electron beam is
decelerated during
this half cycle.
'0
o
.,
>
l:>. __
I
I
.;;:
U Electron beam is
accelerated during
this half cycle.
Figure 942 Applegate diagram with gap voltage for a reflex klystron.
376
Microwave LinearBeam Tubes (0 Type)
Chap. 9
at t = tI, dz/dt = V(tl) = K
1
; then
e(Vr + Yo) ft ft
z= mL (ttl)dt+v(tl) dt
t) II
e(V
r
+ Yo)
z = 2mL (t  tlY + v (tl)(t  tl) + K2
at t = tI, z = d = K
2
; then
(946)
(947)
On the assumption that the electron leaves the cavity gap at z = d and time tl with a
velocity of V(tl) and returns to the gap at z = d and time t2, then, at t = t2, Z = d,
e(Vr + Yo) ( )2 « )
o = 2mL t2  tl + v tl) t2  t1
The roundtrip transit time in the repeller region is given by
I 2mL () I[ {3iV
l
. ( ()g)]
T = t2  tl = e(V
r
+ Yo) v t, = To I + 2V
o
sm wtl  "2
where
T'  2mLvo (948)
o  e(V
r
+ Yo)
is the roundtrip dc transit time of the centerofthebunch electron.
Multiplication of Eq. (947) through by a radian frequency results in
w(t2  tl) = ()b + X' sin (wt l  i) (949)
where
()b = wTb
is the roundtrip dc transit angle of the centerofthebunch electron and
X' == {3i VI ()'
2V
o
0
is the bunching parameter of the reflex klystron oscillator.
9·4·2 Power Output and Efficiency
(9410)
(9411)
In order for the electron beam to generate a maximum amount of energy to the oscil
lation, the returning electron beam must cross the cavity gap when the gap field is
maximum retarding. In this way, a maximum amount of kinetic energy can be trans
ferred from the returning electrons to the cavity walls. It can be seen from Fig.
Sec. 9.4 Reflex Klystrons 377
942 that for a maximum energy transfer, the roundtrip transit angle, referring to
the center of the bunch, must be given by
w(t2  tl) = wTO = (n  ~ ) 2 7 T = N 27T = 27Tn  ~ (9412)
where VI ~ V
o
is assumed, n = any positive integer for cycle number, and N =
n  i is the number of modes.
The current modulation of the electron beam as it reenters the cavity from the
repeller region can be determined in the same manner as in Section 9 2 for a two
cavity klystron amplifier. It can be seen from Eqs. (9230) and (949) that the
bunching parameter X' of a reflex klystron oscillator has a negative sign with respect
to the bunching parameter X of a twocavity klystron amplifier. Furthermore, the
beam current injected into the cavity gap from the repeller region flows in the nega
tive z direction. Consequently, the beam current of a reflex klystron oscillator can be
written
i
2t
= 1
0
 2: 2/
0
In(nX ') cos [n (Wt2  Oh  Og)]
n=l
(9413)
The fundamental component of the current induced in the cavity by the modulated
electron beam is given by
i
2
=  (3;I2 = 2/
0
{3JI(X') cos (Wt2  Oh) (9414)
in which Og has been neglected as a small quantity compared with Oh. The magni
tude of the fundamental component is
Iz = 2/
0
{3JI(X')
The dc power supplied by the beam voltage V
o
is
Pde = Vo/o
and the ac power delivered to the load is given by
Vllz ,
Pac = 2 = V1 / o{3JI(X )
(9415)
(9416)
(9417)
(9418)
(9419)
From Eqs.(941O), (9410, and (9412) the ratio of VI over V
o
is expressed by
VI 2X'
V
o
(3i(27Tn  7T/2)
Substitution of Eq. (9418) in Eq. (9417) yields the power output as
P = 2Vo/oX' JI(X')
ac 27Tn  7T/2
Therefore the electronic efficiency of a reflex klystron oscillator is defined as
"Effi . = P
ae
= 2X' JI(X')
clency  P 2 /2
de 7Tn  7T
(9420)
378 Microwave LinearBeam Tubes (0 Type) Chap. 9
(9421)
The factor X' J,(X ') reaches a maximum value of 1.25 at X' = 2.408 and J
1
(X ') =
0.52. In practice, the mode of n = 2 has the most power output. If n = 2 or I ~
mode, the maximum electronic efficiency becomes
Effi
.  2(2.408)J1(2.408)  22 701.
clencYmax  217' (2)  17'/2  . '/0
The maximum theoretical efficiency of a reflex klystron oscillator ranges from 20 to
30%. Figure 943 shows a curve of X' J
1
(X ') versus XI.
1.25
1.4


 

 ~
1.2
"'
.......
/
v
i
'\
I
1.0
V
\
I
I
0.8
/
I
\
I
0.6
I
V i
\
0.4
i ~
/
I
\
I
0.2
/
i
\
0
./ I
0
0.5 1.0 1.5 2.0 /2.5
3.0 3.5 4.0
2.408
X'
Figure 943 X' J,(X ') versus X'.
For a given beam voltage V
o
, the relationship between the repeller voltage and
cycle number n required for oscillation is found by inserting Eqs. (9412) and
(941) into Eq. (948):
V
o
(217'n  17'/2)2 e
8w
2
U m
(9422)
The power output can be expressed in terms of the repeller voltage V
r
• That is,
p _ V%X' 11(X')(V
r
+ V
o
) ~ (9423)
ac  wL. V ~
It can be seen from Eq. (9422) that, for a given beam voltage V
o
and cycle number
n or mode number N, the center repeller voltage V
r
can be determined in terms of
the center frequency. Then the power output at the center frequency can be calcu
lated from Eg. (9423). When the frequency varies from the center frequency and
the repeller voltage about the center voltage, the power output will vary accordingly,
assuming a bell shape (see Fig. 944).
Sec. 9.4 Reflex Klystrons
379
100 200 300 400 500 600 700 800 900 1000
J
I
/ /
/
V
J
V
I
I
(
(
1\
4
'\
mOdel
\
31
mode
4
mode
J
II'
I
I
\
I
9.96
400
10.04
N
10.02
::r::
"
.5
;>,
10.00
t)
c
.,
:l
0
9.98
"'"
o
o
300
E
.5
;;
0. 200
g
....
100
o
ll.
Repeller voltage in volts
Figure 944 Power output and frequency characteristics of a reflex klystron.
9·4·3 Electronic Admittance
From Eq. (9414) the induced current can be written in phasor form as
i
z
= 2/
0
{3JI (X
The voltage across the gap at time 1z can also be written in phasor form:
(9424)
(9425)
The ratio of i
z
to V
z
is defined as the electronic admittance of the reflex klystron.
That is,
_ 10 f3T Ob 211(X') '(",/Z8')
y._ eJ 0
e V
o
2 X'
(9426)
The amplitude of the phasor admittance indicates that the electronic admittance is a
function of the dc beam admittance, the dc transit angle, and the second transit of
the electron beam through the cavity gap. It is evident that the electronic admittance
is nonlinear, since it is proportional to the factor 21
1
(X')/X I, and X' is proportional
to the signal voltage. This factor of proportionality is shown in Fig. 945. When
the signal voltage goes to zero, the factor approaches unity.
380
Microwave LinearBeam Tubes (0 Type) Chap. 9
....
'"
"
"
"
'"
'"
"
f'...
1.0
0.8
..... 
NO.6
...
2
u
c:: 0.4
o
'a
e
a0.2
o
o 2
Bunching parameter X'
3 4
Figure 945 Reflex klystron saturation
factor.
The equivalent ciruit of a reflex klystron is shown in Fig. 946. In this circuit
Land C are the energy storage elements of the cavity; G
c
represents the copper
losses of the cavity, G
b
the beam loading conductance, and G
e
the load conductance.
The necessary condition for oscillations is that the magnitude of the negative
real part of the electronic admittance as given by Eq. (9426) not be less than the
total conductance of the cavity circuit. That is,
IGel G (9427)
where G = G
c
+ G
b
+ G
e
= l/R
sh
and R
Sh
is the effective shunt resistance.
Figure 946 Equivalent circuit of a
reflex klystron.
Equation (9426) can be rewritten in rectangular form:
Y
e
= Ge + jB
e
(9428)
Since the electronic admittance shown in Eq. (9426) is in exponential form, its
phase is 7T/2 when is zero. The rectangular plot of the electron admittance Y
e
is a
spiral (see Fig. 947). Any value of for which the spiral lies in the area to the left
of line (G  jB) will yield oscillation. That is,
where N is the mode number as indicated in the plot, the phenomenon verifies the
early analysis.
Oscillation region  I 
I
I
I ;80
I
C
e
80
Nonoscillation region
+;B
e
Conductance
~ m h o s
Figure 947 Electronic admittance spiral of a reflex klystron.
Example 941: Reflex Klystron
A reflex klystron operates under the folIowing conditions:
V
o
=600V
R
sh
= 15kfl
L = I mm
e
 = 1.759 X 1011 (MKS system)
m
fr = 9 GHz
The tube is osciIlating atfr at the peak of the n = 2 mode or I ~ mode. Assume that the
transit time through the gap and beam loading can be neglected.
a. Find the value of the repelIer voltage V,.
b. Find the direct current necessary to give a microwave gap voltage of 200 V.
c. What is the electronic efficiency under this condition?
Solution
a. From Eq. (9422) we obtain
Vo = (!...) (21Tn  1T /2)2
(V, + V
o
)2 m 8w
2
P
II (21T2  1T/2)2 _ X
= (1.759 X 10 ) 8(21T X 9 X 109)2(103)2  0.832
10
3
381
382 Microwave LinearBeam Tubes (0 Type)
600
(V, + VoF = 0.832 x 1 O ~ 3 = 0.721 X 10
6
V, = 250 V
b. Assume that {30 = 1. Since
V
2
= lzR
sh
= 2/
o
J,(X'}R
sh
the direct current 1
0
is
I _ V2 _ 200 _
0 2J,(X'}R
sh
 2(0.582)(15 x W}  11.45 rnA
c. From Eqs. (9411), (9412), and (9420) the electronic efficiency is
Effi . _ 2X' J,(X ') _ 2(1.841)(0.582) _
clency  211"n  11"/2  211"(2) _ 11"/2  19.49%
Chap. 9
95 HELIX TRAVELINGWAVE TUBES (TWTs)
Since Kompfner invented the helix travelingwave tube (TWT) in 1944 [11], its basic
circuit has changed little. For broadband applications, the helix TWTs are almost ex
clusively used, whereas for highaveragepower purposes, such as radar transmitters,
the coupledcavity TWTs are commonly used.
In previous sections klystrons and reflex klystrons were analyzed in some de
tail. Before starting to describe the TWT, it seems appropriate to compare the basic
operating principles of both the TWT and the klystron. In the case of the TWT, the
microwave circuit is nonresonant and the wave propagates with the same speed as
the electrons in the beam. The initial effect on the beam is a small amount of veloc
ity modulation caused by the weak electric fields associated with the traveling wave.
Just as in the klystron, this velocity modulation later translates to current modula
tion, which then induces an RF current in the circuit, causing amplification. How
ever, there are some major differences between the TWT and the klystron:
1. The interaction of electron beam and RF field in the TWT is continuous over
the entire length of the circuit, but the interaction in the klystron occurs only
at the gaps of a few resonant cavities.
2. The wave in the TWT is a propagating wave; the wave in the klystron is not.
3. In the coupledcavity TWT there is a coupling effect between the cavities,
whereas each cavity in the klystron operates independently.
A helix travelingwave tube consists of an electron beam and a slowwave struc
ture. The electron beam is focused by a constant magnetic field along the electron
beam and the slowwave structure. This is termed an 0 type travelingwave tube.
The slowwave structure is either the helical type or foldedback line. The applied
signal propagates around the turns of the helix and produces an electric field at the
Sec. 9.5 Helix TravelingWave Tubes (TWTs) 383
center of the helix, directed along the helix axis. The axial electric field progresses
with a velocity that is very close to the velocity of light multiplied by the ratio of he
lix pitch to helix circumference. When the electrons enter the helix tube, an interac
tion takes place between the moving axial electric field and the moving electrons.
On the average, the electrons transfer energy to the wave on the helix. This interac
tion causes the signal wave on the helix to become larger. The electrons entering the
helix at zero field are not affected by the signal wave; those electrons entering the
helix at the accelerating field are accelerated, and those at the retarding field are de
celerated. As the electrons travel further along the helix, they bunch at the collector
end. The bunching shifts the phase by 7T /2. Each electron in the bunch encounters a
stronger retarding field. Then the microwave energy of the electrons is delivered by
the electron bunch to the wave on the helix. The amplification of the signal wave is
accomplished. The characteristics of the travelingwave tube are:
Frequency range: 3 GHz and higher
Bandwidth: about 0.8 GHz
Efficiency: 20 to 40%
Power output: up to 10 kW average
Power gain: up to 60 dB
The present state of the art for U.S. highpower TWTs is shown in Fig. 951.
Figure 951 State of the art for U.S.
highpower TWTs.
40 20 0.6 1 2 3.. 8 10
FREQUENCY, GHz
0.2 0.3
f
I ~
~
...

 ~
... ...
...
~   ~
f
~  
'I' 1'
i'
~ ...I... ...
I
:
' '
I
' '
f
,
I i
i
I
i
I
0.1
0.1
02
06
10
20
40
30
60
100
200
04
JOO
384
Microwave LinearBeam Tubes (0 Type)
Chap. 9
951 SlowWave Structures
As the operating frequency is increased, both the inductance and capacitance of the
resonant circuit must be decreased in order to maintain resonance at the operating
frequency. Because the gainbandwidth product is limited by the resonant circuit,
the ordinary resonator cannot generate a large output. Several nonresonant periodic
circuits or slowwave structures (see Fig. 952) are designed for producing large
gain over a wide bandwidth.
(a)
(e)
(b)
(d)
(e)
Figure 952 Slowwave structures. (a) Helical line. (b) Foldedback line. (c)
Zigzag line. (d) Interdigitalline. (e) Corrugated waveguide.
Slowwave structures are special circuits that are used in microwave tubes to
reduce the wave velocity in a certain direction so that the electron beam and the sig
nal wave can interact. The phase velocity of a wave in ordinary waveguides is
greater than the velocity of light in a vacuum. In the operation of travelingwave and
magnetrontype devices, the electron beam must keep in step with the microwave
signal. Since the electron beam can be accelerated only to velocities that are about a
fraction of the velocity of light, a slowwave structure must be incorporated in the
microwave devices so that the phase velocity of the microwave signal can keep pace
with that of the electron beam for effective interactions. Several types of slowwave
structures are shown in Fig. 952.
The commonly used slowwave structure is a helical coil with a concentric con
ducting cylinder (see Fig. 953).
It can be shown that the ratio of the phase velocity V
p
along the pitch to the
phase velocity along the coil is given by
v
p
=
c
(951)
Sec. 9.5 Helix TravelingWave Tubes (TWTs)
Figure 953 Helical slowwave structure. (a) Helical coil. (b) One turn of helix.
385
where c = 3 X 10
8
mls is the velocity of light in free space
p = helix pitch
d = diameter of the helix
l/J = pitch angle
In general, the helical coil may be within a dielectricfilled cylinder. The phase
velocity in the axial direction is expressed as
 P
V
PE
 VJLE[p 2 + {7Tdf]
(952)
(953)
If the dielectric constant is too large, however, the slowwave structure may intro
duce considerable loss to the microwave devices, thereby reducing their efficiency.
For a very small pitch angle, the phase velocity along the coil in free space is ap
proximately represented by
v = pc = ~
P 1Td f3
Figure 954 shows the wf3 (or Brillouin) diagram for a helical slowwave
structure. The helix wf3 diagram is very useful in designing a helix slowwave struc
ture. Once f3 is found, V
p
can be computed from Eq. (953) for a given dimension
of the helix. Furthermore, the group velocity of the wave is merely the slope of the
curve as given by
aw
Vgr = af3
(954)
w
I ~ = c
I 13
I
I
I
I
I
I
I
I
I
I
Figure 954 wf3 diagram for a helical
(3 structure.
386
Microwave LinearBeam Tubes (0 Type) Chap. 9
In order for a circuit to be a slowwave structure, it must have the property of
periodicity in the axial direction. The phase velocity of some of the spatial harmon
ics in the axial direction obtained by Fourier analysis of the waveguide field may be
smaller than the velocity of light. In the helical slowwave structure a translation
back or forth through a distance of one pitch length results in identically the same
structure again. Thus the period of a helical slowwave structure is its pitch.
In general, the field of the slowwave structure must be distributed according to
Floquet's theorem for periodic boundaries. Floquet's periodicity theorem states that:
The steadystate solutions for the electromagnetic fields of a single propagating mode in
a periodic structure have the property that fields in adjacent cells are related by a com
plex constant.
Mathematically, the theorem can be stated
E(x, y, z  L) = E(x, y, z)ejJ
3
0L (955)
where E(x, y, z) is a periodic function of z with periodL. Since {3o is the phase con
stant in the axial direction, in a slowwave structure (3o is the phase constant of aver
age electron velocity.
It is postulated that the solution to Maxwell's equations in a periodic structure
can be written
E(x, y, z) = f(x, y, z)e
jf3oZ
(956)
where !(x, y, z) is a periodic function of z with period L that is the period of the
slowwave structure.
For a periodic structure, Eq. (956) can be rewritten with z replaced by
z  L:
E(x, y, z  L) = !(x, y, z  L)e
jf3o
(zL)
Since!(x, y, z  L) is a periodic function with period L, then
f(x, y, z  L) = f(x, y, z)
(957)
(958)
Substitution of Eq. (958) in (957) results in
E(x, y, z  L) = f(x, y, z)ejf3ozejf3oL (959)
and substitution of Eq. (956) in (959) gives
E(x, y, z  L) = E(x, y, z)e
jf3oL
(9510)
This expression is the mathematical statement of Floquet's theorem, Eq. (955).
Therefore Eq. (956) does indeed satisfy Floquet's theorem.
From the theory of Fourier series, any function that is periodic, singlevalued,
finite, and continuous may be represented by a Fourier series. Hence the field distri
bution function E(x, y, z) may be expanded into a Fourier series of fundamental pe
riod Las
(9511)
n=oo n= 00
Sec. 9.5 Helix TravelingWave Tubes (TWTs) 387
where
1 fL
En(x, y) = L 0 E(x, y, z)e
j
(27Tn/L)Z dz
are the amplitudes of n harmonics and
(9512)
27Tn
{3n = Bo + L
(4513)
, 2, 1,0,1,2,3,
00
, . is the phase constant of the nth modes, where n =
00
The quantities En(x, y)e
jf3nZ
are known as spatial harmonics by analogy with
timedomain Fourier series. The question is whether Eq. (9511) can satisfy the
electric wave equation, Eq. (2120). Substitution of Eq. (9511) into the wave
equation results in
En(x, y)e
jf3nZ
]  En(x, y)e
jf3nz
] = 0
Since the wave equation is linear, Eq. (9514) can be rewritten as
(9514)
(9515)
n=OO
It is evident from the preceding equation that if each spatial harmonic is itself a solu
tion of the wave equation for each value of n, the summation of space harmonics also
satisfies the wave equation of Eq. (9514). This means that only the complete solu
tion of Eq. (9514) can satisfy the boundary conditions of a periodic structure.
Furthermore, Eq. (9511) shows that the field in a periodic structure can be
expanded as an infinite series of waves, all at the same frequency but with different
phase velocities Vpn . That is
(9516)
(9517)
w w
v =  == .,.
pn {3n {3o + (21Tn/ L)
The group velocity V
gr
, defined by V
gr
= aw/ a{3 , is then given as
= [d(f3o + 21Tn/L)]1 =
V
gr
dw a{3o
which is independent of n.
It is important to note that the phase velocity Vpn in the axial direction de
creases for higher values of positive nand {3o . So it appears possible for a microwave
of suitable n to have a phase velocity less than the velocity of light. It follows that
interactions between the electron beam and microwave signal are possible and thus
the amplification of active microwave devices can be achieved.
Figure 955 shows the w{3 (or Brillouin) diagram for a helix with several
spatial harmonics. This w{3 diagram demonstrates some important properties need
ing more explanation. First, the second quadrant of the w{3 diagram indicates the
negative phase velocity that corresponds to the negative n. This means that the elec
tron beam moves in the positive z direction while the beam velocity coincides with
388 Microwave LinearBeam Tubes (0 Type) Chap. 9
61T
L
41T
L
21T
L
o 21T
T
41T
T
(3 Figure 955 w13 diagram of spatial
harmonics for helical structure.
the negative spatial harmonic's phase velocity. This type of tube is called a
backwardwave oscillator. Second, the shaded areas are the forbidden regions for
propagation. This situation occurs because if the axial phase velocity of any spatial
harmonic exceeds the velocity of light, the structure radiates energy. This property
has been verified by experiments [10].
9·5·2 Amplification Process
A schematic diagram of a helixtype travelingwave tube is shown in Fig. 956.
The slowwave structure of the helix is characterized by the Brillouin diagram
shown in Fig. 955. The phase shift per period of the fundamental wave on the
structure is given by
(9518)
(9519)
(9520)
where /30 = w/vo is the phase constant of the average beam velocity and L is the pe
riod or pitch.
Since the dc transit time of an electron is given by
L
To =
Va
the phase constant of the nth space harmonic is
/3n = W = (Jt + 27Tn = /30 + 27Tn
Vo voT
o
L
In Eq. (9520) the axial spaceharmonic phase velocity is assumed to be synchro
nized with the beam velocity for possible interactions between the electron beam
and electric field. That is,
v
np
= Vo (9521)
Equation (9520) is identical to Eq. (9513). In practice, the dc velocity of the
electrons is adjusted to be slightly greater than the axial velocity of the electromag
netic wave for energy transfer. When a signal voltage is coupled into the helix, the
axial electric field exerts a force on the electrons as a result of the following rela
tionships:
F =  eE and E =  vv (9522)
Sec. 9.5 Helix TravelingWave Tubes (TWTs) 389
Tube body
rCollector
 ~
6 Electron
beam
Attenuator
Helix
' .. ,
..........................
Electron beam
focusing magnet
a ,
RF input
RF output
Gain or modulation
L..1 control voltage
Regulated
beam supply +
Collector
supply +
(a)
RF input
Anode ,
Cathode
Gun
assembly
RF output
Collector
Heater
(b)
Figure 956 Diagram of helix travelingwave tube: (a) schematic diagram of helix
travelingwave tube; (b) simplified circuit.
The electrons entering the retarding field are decelerated and those in the accelerat
ing field are accelerated. They begin forming a bunch centered about those electrons
that enter the helix during the zero field. This process is shown in Fig. 957.
Since the dc velocity of the electrons is slightly greater than the axial wave ve
locity, more electrons are in the retarding field than in the accelerating field, and a
great amount of energy is transferred from the beam to the electromagnetic field.
The microwave signal voltage is, in turn, amplified by the amplified field. The
bunch continues to become more compact, and a larger amplification of the signal
voltage occurs at the end of the helix. The magnet produces an axial magnetic field
to prevent spreading of the electron beam as it travels down the tube. An attenuator
placed near the center of the helix reduces all the waves traveling along the helix to
nearly zero so that the reflected waves from the mismatched loads can be prevented
from reaching the input and causing oscillation. The bunched electrons emerging
390
u
'C '0
.... 
U lU
lUI.;:;
[jj
Microwave LinearBeam Tubes (0 Type)
Retarding field
 Retarding force
Accelerating field
Accelerating force
Chap. 9
Figure 957 Interactions between electron beam and electric field.
from the attenuator induce a new electric field with the same frequency. This field,
in turn, induces a new amplified microwave signal on the helix.
The motion of electrons in the helixtype travelingwave tube can be quantita
tively analyzed in terms of the axial electric field. If the traveling wave is propagat
ing in the z direction, the z component of the electric field can be expressed as
E
z
= E
l
sin (wt  {3pz) (9523)
where E
l
is the magnitude of the electric field in the z direction. If t = to at z = 0,
the electric field is assumed maximum. Note that {3p = w/vp is the axial phase con
stant of the microwave, and V
p
is the axial phase velocity of the wave.
The equation of motion of the electron is given by
m ~ ~ = eEl sin (wt  {3pz)
Assume that the velocity of the electron is
v = Vo + V
e
cos (Wet + Oe)
Then
(9524)
(9525)
dv
dt
(9526)
where Vo = dc electron velocity
V
e
= magnitude of velocity fluctuation in the velocitymodulated electron
beam
We = angular frequency of velocity fluctuation
Oe = phase angle of the fluctuation
Substitution of Eq. (9526) in Eq. (9524) yields
mVeW
e
sin (Wet + We) = eEl sin (wt  {3pz) (9527)
For interactions between the electrons and the electric field, the velocity of the
velocitymodulated electron beam must be approximately equal to the dc electron
velocity. This is
v = Vo
(9528)
Sec. 9.5 Helix TravelingWave Tubes (TWTs) 391
Hence the distance z traveled by the electrons is
z = vo(t  to)
and
mvew
e
sin (Wet + (Je) = eEl sin [wt  (3pvo(t  to)]
Comparison of the left and righthand sides of Eq. (9530) shows that
eEl
V
e
=
mw
e
We = (3p(vp  vo)
(Je = {3p voto
(9529)
(9530)
(9531)
It can be seen that the magnitude of the velocity fluctuation of the electron beam is
directly proportional to the magnitude of the axial electric field.
9·5·3 Convection Current
In order to determine the relationship between the circuit and electron beam quanti
ties, the convection current induced in the electron beam by the axial electric field
and the microwave axial field produced by the beam must first be developed. When
the spacecharge effect is considered, the electron velocity, the charge density, the
current density, and the axial electric field will perturbate about their averages or dc
values. Mathematically, these quantities can be expressed as
v = Vo + VI ejwtyz
P = po + PI ejwtyz
J =  J
o
+ J
I
ejwtyz
(9532)
(9533)
(9534)
(9535)
where y = a
e
+ j{3e is the propagation constant of the axial waves. The minus sign
is attached to J
o
so that J
o
may be a positive in the negative z direction. For a small
signal, the electron beamcurrent density can be written
(9536)
(9537)
where  J
o
= PoVo, J
I
= PI Vo + POVI , and PI VI = 0 have been replaced. If an ax
ial electric field exists in the structure, it will perturbate the electron velocity accord
ing to the force equation. Hence the force equation can be written
dv e. ( a dz a) ( . ).
 = _Elelwtyz =  +  V = JW  YVo vlelwtyz
dt m at dt az
where dzI dt has been replaced by vo. Thus
elm
VI. E}
JW  yvo
(9538)
392 Microwave LinearBeam Tubes (0 Type)
Chap. 9
In accordance with the law of conservation of electric charge, the continuity equa
tion can be written
It follows that
_hJI
PI =
W
Substitution Eqs. (9538) and (9540) in
J1 = PIVO + POVI
gives
(9539)
(954O)
(9544)
(9543)
W e J
o
J
I
= J  . E
1
(9 5 42)
Vo m (Jw  yvO}2  
where  J
o
= PoVo has been replaced. If the magnitude of the axial electric field is
uniform over the crosssectional area of the electron beam, the spatial ac current i
will be proportional to the dc current 1
0
with the same proportionality constant for J
1
and J
o
. Therefore the convection current in the electron beam is given by
. . /3elo E
I = ]2V
o
(J/3e _ y)2 1
where /3e == w/vo is defined as the phase constant of the velocitymodulated electron
beam and Vo = V(2e/m)V
o
has been used. This equation is called the electronic
equation. for it determines the convection current induced by the axial electric field.
If the axial field and all parameters are known, the convection current can be found
by means of Eq. (9543).
954 Axial Electric Field
The convection current in the electron beam induces an electric field in the slow
wave circuit. This induced field adds to the field already present in the circuit and
causes the circuit power to increase with distance. The coupling relationship be
tween the electron beam and the slowwave helix is shown in Fig. 958.
i..
I + iJi d ~
~ iJ:
_ ==!: Elec[ron heanl
,  iJi d ~
t i J ~
.. j + fJj d ~
i J ~
___(_.transmission line
Figure 958 Electron beam coupled to
equivalent circuit of a slowwave helix.
Sec. 9.5 Helix TravelingWave Tubes (TWTs) 393
For simplicity, the slowwave helix is represented by a distributed lossless
transmission line. The parameters are defined as follows:
L = inductance per unit length
C = capacitance per unit length
1 = alternating current in transmission line
V = alternating voltage in transmission line
i = convection current
Since the transmission line is coupled to a convectionelectron beam current, a
current is then induced in the line. The current flowing into the leftend portion of
the line of length dz is i, and the current flowing out of the right end of dz is
[i + (aijaz) dz]. Since the net change of current in the length dz must be zero, how
ever, the current flowing out of the electron beam into the line must be
[(aijaz) dz]. Application of transmissionline theory and Kirchhoff's current law
to the electron beam results, after simplification, in
Then
()/ _ cay ai
 
az at az
yl =  jwCV + yi
(9544)
(9545)
in which ajaz = y and ajat = jw are replaced.
From Kirchhoff's voltage law the voltage equation, after simplification, is
av = L al
az at
Similarly,
yV =  jwLl
Elimination of the circuit current 1 from Eqs. (9545) and (9546) yields
(9546)
(9547)
(9548)
If the convectionelecron beam current is not present, Eq. (9548) reduces to a typ
ical wave equation of a transmission line. When i = 0, the propagation constant is
defined from Eq. (9548) as
Yo == jwyIL(;
(9549)
and the characteristic impedance of the line can be determined from Eqs. (9545)
and (9547):
(9550)
394 Microwave LinearBeam Tubes (0 Type) Chap. 9
When the electron beam current is present, Eq. (9548) can be written in terms of
Eqs. (9549) and (9550):
(9551)
(9553)
Since E
z
=  vV =  (aV/ az) = I'V, the axial electric field is given by
E
1
=  1'
2
21'
0
2
0
2
i (9552)
I'  1'0
This equation is called the circuit equation because it determines how the axial elec
tric field of the slowwave helix is affected by the spatial ac electron beam current.
9·5·5 Wave Modes
The wave modes of a helixtype travelingwave tube can be determined by solving
the electronic and circuit equations simultaneously for the propagation constants.
Each solution for the propagation constants represents a mode of traveling wave in
the tube. It can be seen from Eqs. (9543) and (9552) that there are four distinct
solutions for the propagation constants. This means that there are four modes of trav
eling wave in the Otype travelingwave tube, Substitution of Eq. (9543) in Eq.
(9552) yields
(
2 _ 2)( 'f3 _ )2 __ ,1'21'0
2
0(3elo
I' 1'0 1 e I'  ] 2V
o
Equation (9553) is of fourth order in I' and thus has four roots. Its exact solutions
can be obtained with numerical methods and a digital computer. However, the ap
proximate solutions may be found by equating the dc electron beam velocity to the
axial phase velocity of the traveling wave, which is equivalent to setting
1'0 = j(3e
Then Eq. (9553) reduces to
(I'  j(3e)3(I' + j(3e) = 2C
3
(3;I'2
where C is the travelingwave tube gain parameter and is defined as
(9554)
(9555)
(9556)
C == (/
0
2
0
)1/3
4V
o
It can be seen from Eq. (9555) that there are three forward traveling waves corre
sponding to e  j{3,z and one backward traveling wave corresponding to e+
j
{3,z. Let the
propagation constant of the three forward traveling waves be
I' = j(3e  (3e CS
where it is assumed that CS <{ 1.
Substitution of Eq. (9557) in Eq. (9555) results in
((3eCS)3(j2(3e  (3eCS) = 2C
3
(3;((3;  2j(3;CS + mC
2
S
2
)
(9557)
(9558)
Sec. 9.5 Helix TravelingWave Tubes (TWTs) 395
Since C8 <{ 1, Eq. (9558) is reduced to
8 = ( j)I/3
(9559)
! n =0
6'
From the theory of complex variables the three roots of ( j) can be plotted in Fig.
959.
J
I
+""*:fr Real
51r
6
n = I
J
Figure 959 Three roots of ( j).
Equation (9559) can be written in exponential form as
11 = (_J')1/3 = e
j
[(7T/2+2n1T)/3] ( 0 1 2)
u n = , ,
The first root 8
1
at n = 0 is
The second root 8
2
at n = 1 is
8
2
= e
j57T
/
6
= _ V3  I!
2 2
The third root 8
3
at n = 2 is
(9560)
(9561)
(9562)
(9563)
The fourth root 8
4
corresponding to the backward traveling wave can be obtained by
setting
(9564)
Similarly,
Thus the values of the four propagation constants l' are given by
1'1 = (3eCv: + j{3e(l + ~ )
1'2 = (3eC v: + j{3e(l + ~ )
1'3 = j{3e(l  C)
1'4 =  j{3e(1 _ ~ 3 )
(9565)
(9566)
(9567)
(9568)
(9569)
396 Microwave LinearBeam Tubes (0 Type) Chap. 9
These four propagation constants represent four different modes of wave propagation
in the 0 type helical travelingwave tube. It is concluded that the wave correspond
ing to '}'l is a forward wave and that its amplitude grows exponentially with distance;
the wave corresponding to '}'Z is also a forward wave, but its amplitude decays expo
nentially with distance; the wave corresponding to '}'3 is also a forward wave, but its
amplitude remains constant; the fourth wave corresponding to '}'4 is a backward
wave, and there is no change in amplitude. The growing wave propagates at a phase
velocity slightly lower than the electron beam velocity, and the energy flows from
the electron beam to the wave. The decaying wave propagates at the same velocity as
that of the growing wave, but the energy flows from the wave to the electron beam.
The constantamplitude wave travels at a velocity slightly higher than the electron
beam velocity, but no net energy exchange occurs between the wave and the electron
beam. The backward wave progresses in the negative z direction with a velocity
slightly higher than the velocity of the electron beam inasmuch as the typical value
of C is about 0.02.
9·5·6 Gain Consideration
For simplicity, it is assumed that the structure is perfectly matched so that there is no
backward traveling wave. Such is usually the case. Even though there is a reflected
wave from the output end of the tube traveling backward toward the input end, the
attenuator placed around the center of the tube subdues the reflected wave to a mini
mum or zero level. Thus the total circuit voltage is the sum of three forward
voltages corresponding to the three forward traveling waves. This is equivalent to
3
V(z) = + V
z
e1'ZZ + = L V
n
e1'n
Z
n=l
The input current can be found from Eq. (9543) as
• 3 1
0
V
n
I(Z) =  L e1'n
Z
n=l 2V
o
C
z
(9570)
(9571)
(9572)
in which C8 I, £1 = '}'V, and'}' = j/3e{l  C8) have been used.
The input fluctuating component of velocity of the total wave may be found
from Eq. (9538) as
3
()
",.VoVn_z
VI Z = Li J e 1'n
2V
o
C 8
n
where £1 = '}'V, C8 1, /3evo = w, and Vo = V(2e/m)Vo have been used.
To determine the amplification of the growing wave, the input reference point
is set at Z = 0 and the output reference point is taken at Z = e. It follows that at
Z = 0 the voltage, current, and velocity at the input point are given by
(9573)
(9574)
Sec. 9.5 Helix TravelingWave Tubes (TWTs) 397
(9575)
. Vo (VI V
2
V3)
VI(O) =  J  +  + 
2V
o
C 01 02 03
The simultaneous solution of Eqs. (9573), (9574), and (9575) with i(O) = 0
and VI(O) = 0 is
(9576)
(9577)
Since the growing wave is increasing exponentially with distance, it will predomi
nate over the total voltage along the circuit. When the length f of the slowwave
structure is sufficiently large, the output voltage will be almost equal to the voltage
of the growing wave. Substitution of Eqs. (9566) and (9576) in Eq. (9570)
yields the output voltage as
V(0) (v3 ) [. ( C)]
V (f) = 3 exp 213e Cf exp  il3e I + "2 f
The factor l3
e
f is conventionally written 21TN, where N is the circuit length in elec
tronic wavelengththat is,
and (9578)
The amplitude of the output voltage is then given by
V (0) ~ r:
V (f) = 3 exp (v 3 1TNC)
The output power gain in decibels is defined as
/
V(f)12
Ap == 10 log V(O) = 9.54 + 47.3NC
dB
(95 79)
(9580)
where NC is a numerical number.
The output power gain shown in Eq. (9580) indicates an initial loss at the cir
cuit input of 9.54 dB. This loss results from the fact that the input voltage splits into
three waves of equal magnitude and the growing wave voltage is only onethird the
total input voltage. It can also be seen that the power gain is proportional to the
length N in electronic wavelength of the slowwave structure and the gain parameter
C of the circuit.
Example 951: Operation of TravelingWave Tube (TWT)
A travelingwave tube (TWT) operates under the following parameters:
Beam voltage: V
o
= 3 kV
Beam current: 1
0
= 30 rnA
Characteristic impedance of helix:
Circuit length: N = 50
Frequency: f = 10 GHz
2
0
=100
398 Microwave LinearBeam Tubes (0 Type) Chap. 9
Determine: (a) the gain parameter C; (b) the output power gain A
p
in decibels; and
(c) all four propagation constants.
Solution
a. From Eq. (9556) the gain parameter is
_ (1020)1/3 _ (30 X 10
3
x 10)1/3 _ 10
2
C  4V
o
 4 x 3 X 103  2.92 x
b. From Eq. (9580) the output power gain is
A
p
= 9.54 + 4.73 NC = 9.54 + 47.3 x 50 x 2.92 X 10
2
= 59.52 dB
c. The four propagation constants are
w ( 27T X 10
10
)
f3, = Vo = 0.593 X 10
6
v3XlO = 1.93 X 10
3
rad/m
1'1 = f3,Cv: + jf3,(1 + ~ )
(
292 x 10
2
)
= 1.93 x 10
3
x 2.92 X 10
2
x 0.87 + j 1.93 X 10
3
1 +' 2
= 49.03 + j 1952
'Y2 = f3,C v: +jf3,(1 + ~ ) = 49.03 +jl952
1'3 = jf3,O  C) = j 1.93 x wO  2.92 x 10
2
)
= j 1872.25
. ( C
3
). [(2.92 x 10
2
)3]
1'4 =  jf3, 1  4 =  J 1. 93 x W 1  4
=  j 1930
9·6 COUPLED·CAVITY TRAVELlNG·WAVE TUBES
Helix travelingwave tubes (TWTs) produce at most up to several kilowatts of aver
age power output. Here we describe coupledcavity travelingwave tubes, which are
used for highpower applications.
9·6·1 Physical Description
The term coupled cavity means that a coupling is provided by a long slot that
strongly couples the magnetic component of the field in adjacent cavities in such a
manner that the passband of the circuit is mainly a function of this one variable. Fig
ure 961 shows two coupledcavity circuits that are principally used in traveling
wave tubes.
Sec. 9.6 CoupledCavity TravelingWave Tubes 399
Magnet
Coupling hole
(a)
Iron
pole piece
Copper
(b)
Electron
beam
Figure 961 Coupledcavity circuits in the TWTs. (a) Basic coupledcavity cir
cuit. (b) Coupledcavity circuit with integral periodicpermanentmagnet (PPM) fo
cusing. (After J. T. Mendel [15]; reprinted by permission of 1£££.)
As far as the coupling effect is concerned, there are two types of coupled
cavity circuits in travelingwave tubes. The first type consists of the fundamentally
forwardwave circuits that are normally used for pulse applications requiring at least
half a megawatt of peak power. These coupledcavity circuits exhibit negative mu
tual inductive coupling between the cavities and operate with the fundamental space
harmonic. The cloverleaf [12] and centipede circuits [13] (see Fig. 962) belong to
this type. The second type is the first spaceharmonic circuit, which has positive mu
tual coupling between the cavities. These circuits operate with the first spatial har
monic and are commonly used for pulse or continuous wave (CW) applications from
one to several hundred kilowatts of power output [14]. In addition, the longslot cir
cuit of the positive mutual couplingcavity circuit operates at the fundamental spatial
400 Microwave LinearBeam Tubes (0 Type)
...
",' ..t ... ,
,
,. ....
... r'"
........ "" ...... •.
,
Figure 962 Centipede and cloverleaf coupledcavity circuits. (After A. Staprans
et al. [7J; reprinted by permission of IEEE.)
Chap. 9
Figure 963 Spaceharmonic coupled
cavity circuits. (After A. Staprans et al.
[7J; reprinted by permission of IEEE,
Inc.)
harmonic with a higher frequency mode. This circuit is suitable for megawatt power
output. Figure 963 shows several spaceharmonic coupledcavity circuits.
9·6·2 Principles of Operation
Any repetitive series of lumped LC elements constitute a propagating filtertype cir
cuit. The coupled cavities in the travelingwave tube are usually highly overcoupled,
resulting in a bandpassfiltertype characteristic. When the slot angle (0) as shown in
Fig. 96I(a) is larger than 180°, the passband is close to its practical limits. The
drift tube is formed by the reentrant part of the cavity, just as in the case of a
klystron. During the interaction of the RF field and the electron beam in the
travelingwave tube a phase change occurs between the cavities as a function of fre
quency. A decreasing phase characteristic is reached if the mutual inductance of the
coupling slot is positive, whereas an increasing phase characteristic is obtained if the
mutual inductive coupling of the slot is negative [12].
The amplification of the travelingwave tube interaction requires that the elec
tron beam interact with a component of the circuit field that has an increasing phase
characteristic with frequency. The circuit periodicity can give rise to field compo
nents that have phase characteristics [16] as shown in Fig. 964. In Fig. 964 the
angular frequency (w) is plotted as a function of the phase shift (f3 f) per cavity. The
ratio of w to f3 is equal to the phase velocity. For a circuit having positive mutual in
Sec. 9.6 CoupledCavity TravelingWave Tubes
BEAM CHARACTERISTIC
401
4. 3. 2w Y 0
,L
(0)
BEAM CHARACTERISTIC
4 .. 3 .. 2.. .. 0
'L
(b)
2.. 3.. 4"
TWT
OPERATION
IS WITH THIS
BRANCH OF
.. /I
Figure 964 wf3 diagrams for
coupledcavity circuits. (a) Fundamental
forwardwave circuit (negative mutual
inductance coupling between cavities).
(b) Fundamental backwardwave circuit
(positive mutual inductive coupling be
tween cavities). (After A. Staprans et al.
[7J; reprinted by permission of IEEE,
Inc.)
ductive coupling between the cavities, the electron beam velocity is adjusted to be
approximately equal to the phase velocity of the first forwardwave spatial harmonic.
For the circuits with negative mutual inductive coupling, the fundamental branch
component of the circuit wave is suitable for synchronism with the electron beam
and is normally used by the travelingwave tube. The coupledcavity equivalent cir
cuit has been developed by Curnow [17] as shown in Fig. 965.
:Q 00:
Figure 965 Equivalent circuits for a
slotcoupled cavity. (After A. Staprans et
al. [7J; reprinted by permission of IEEE,
Inc.)
402 Microwave LinearBeam Tubes (0 Type) Chap. 9
In Fig. 965 inductances are used to represent current flow and capacitors to
represent the electric fields of the cavities. The circuit can be evolved into a fairly
simple configuration. Loss in the cavities can be approximately calculated by adding
resistance in series with the circuit inductance.
9·6·3 Microwave Characteristics
When discussing the power capability of travelingwave tubes, It IS Important to
make a clear distinction between the average and the peak power because these two
figures are limited by totally different factors. The average power at a given fre
quency is almost always limited by thermal considerations relative to the RF propa
gating circuit. However, the peak RF power capability depends on the voltage for
which the tube can be designed. The beam current varies as the threehalf power of
1.000
lIllO
600
400
200
100
80
80
40
iii
~
<
~
20
g
!5
10 ...
!5
8
0
0:
8
w
~
4
...
0:
2
1
.8
.6
.4
.2
.1
1
AVERAGE
POWER
V· 25 kV
Figure 966 Peak and average power
capability of typical TWTs in field use.
2 3 4 5 6 78 10 20 30 40 60 eo 100 (After J. T. Mendel [I5); reprinted by
FREQUENCY (GHz) permission of IEEE.• Inc.)
Sec. 9.6 CoupledCavity TravelingWave Tubes 403
the voltage, and the product of the beam current and the voltage determines the to
tal beam power. That is,
heam = KV<l/2
P
beam
= KVg/
2
(961 )
(962)
100
80
60
40
20
10
~
8
~
8
....
g
~
4
~
::;)
0
II:
w
~
2
~
"
II:
~
.8
.8
...
where V
o
is the beam voltage and K is the electrongun perveance.
For a solidbeam electron gun with good optics, the perveance is generally
considered to be between 1 to 2 X 10
6
• Once the perveance is fixed, the required
voltage for a given peak beam power is then uniquely determined. Figures 966 and
967 demonstrate the difference between peak and average power capability and the
difference between periodicpermanentmagnet (PPM) and solenoidfocused designs
[15] .
Coupledcavity travelingwave tubes are constructed with a limited amount of
gain per section of cavities to ensure stability. Each cavity section is terminated by
SOLENOID FOCUSED COUPLED
CAVITY TUBES
V 2OkV
•2
Figure 967 CW power capability of
.I'__"'_.L..LJ'L..............L__...L_L..L...L.L...L..J..LJ TWTs operating at nearly 20 kV. (After
1.0 2 J 4 5 6 7 8 910 20 40 60 60 100 J. T. Mendel [15]; reprinted by permis
FREQUENCY IGHzl sion of 1EEE., 1nc.)
404 Microwave LinearBeam Tubes (0 Type) Chap. 9
either a matched load or an input or output line in order to reduce gain variations
with frequency. Cavity sections are cascaded to achieve higher tube gain than can be
tolerated in one section of cavities. Stable gain greater than 60 dB can be obtained
over about 30% bandwidth by this method.
The overall efficiency of coupledcavity travelingwave tubes is determined by
the amount of energy converted to RF energy and the energy dissipated by the col
lector. Interaction efficiencies from 10 to 40% have been achieved from coupled
cavity travelingwave tubes. Overall efficiencies of 20 to 55% have been obtained
[7].
9·7 HIGH·POWER AND GRIDDED·CONTROL
TRAVELlNG·WAVE TUBES
Coupledcavity travelingwave tubes are the most versatile devices used for am
plification at microwave frequencies with high gain, high power, high efficiency, and
wide bandwidth. The present state of the art for U.S. highpower gridded tubes is
shown in Fig. 971. Highpower TWTs have four main sections: electron gun for
electron emission, slowwave structure for effective beam interaction, magnetic cir
cuit for beam focusing, and collector structure for collecting electron beams and dis
sipating heat energy. Specifically, the physical components of a coupledcavity
travelingwave tube consist of an electron emitter, a shadow grid, a control grid, a
modulating anode, a coupledcavity circuit, a solenoid magnetic circuit, and a col
lector depression structure (see Fig. 972).
~
0
8
3
~
2
~
~
1
8
5
..:
:>
:0
:>
0
'"
~
l?
"
~
o.
20
0.8
O.
0.'
0.3
0.2
0.05 0.1 0.2 0.4 0.6 1 2
FREOUENCY, GHz
10 20 30
Figure 9·71 State of the art for U.S. highpower gridded tubes.
~
Figure 972 Cutaway of a coupledcavity travelingwave tube. (Courtesy of Hughes Aircraft
Company, Electron Dynamics Division.)
406
Microwave LinearBeam Tubes (0 Type) Chap. 9
After electrons are emitted from the cathode, the electron beam has a tendency
to spread out because of the electronrepelling force. On the other hand, the electron
beam must be small enough for effective interaction with the slowwave circuit. Usu
ally the diameter of the electron beam is smaller than onetenth wavelength of the
signal. Coupledcavity travelingwave highpower tubes utilize a shadowgrid tech
nique to control the electron beam; so the device is called a gridded travelingwave
tube (GTWT). As shown in Fig. 973 [18], the electron emitter of a gridded
travelingwave tube has two control electrodes: one shadow grid near the cathode
and one control grid slightly away from the cathode. The shadow grid, which is at
cathode potential and interposed between the cathode and the control grid, sup
presses electron emission from those portions of the cathode that would give rise to
interception at the control grid. The control grid, which is at a positive potential,
controls the electron beam. These grids can control far greater beam power than
would otherwise be possible.
Figure 973 Electron emitter with control electrodes for gridded highpower
TWT.
In general, an anode modulation technique is frequently used in travelingwave
tubes to eliminate voltage pulsing through the lower unstable beam voltage and to
reduce modulator power requirements for highpower pulse output. In gridded
travelingwave tubes the modulator applies a highly regulated positive grid drive
voltage with respect to the cathode to turn the electron beam on for RF am
plification. An unregulated negative grid bias voltage with respect to the cathode is
used to cut the electron beam off. Thus the anode modulator acts as a pulse switch
for the electron beam of the gridded travelingwave tube.
The anode of the electron gun is operated at a voltage higher than that of the
slowwave structure to prevent positive ions, formed by the electron beam in the re
gion of the slowwave structure, from draining toward the cathode and bombard
ing it.
9·7·1 High Efflciency and Collector Voltage
Depression
After passing through the output cavity, the electron beam strikes a collector elec
trode. The function of the collector electrode could be performed by replacing the
second grid of the output cavity with a solid piece of metal. However, using a sepa
Sec. 9.7 HighPower and GriddedControl TravelingWave Tubes 407
rate electrode may have two advantages. First, the collector can be made as large as
desired in order to collect the electron beam at a lower density, thus minimizing lo
calized heating. If the collector were part of the slowwave circuit, its size would be
limited by the maximum gap capacitance consistent with good highfrequency per
formance. Second, using a separate collector can reduce its potential considerably
below the beam voltage in the RF interaction region, thereby reducing the power
dissipated in the collector and increasing the overall efficiency of the device. Grid
ded travelingwave highpower tubes have a separate collector that dissipates the
electrons in the form of heat. A cooling mechanism absorbs the heat by thermal con
duction to a cooler surface.
The efficiency of a gridded travelingwave highpower tube is the ratio of the
RF power output to the product of cathode voltage (beam voltage) and cathode cur
rent (beam current). It may be expressed in terms of the product of the electronic
efficiency and the circuit efficiency. The electronic efficiency expresses the percent
age of the dc or pulsed input power that is converted into RF power on the slow
wave structure. The circuit efficiency, on the other hand, determines the percentage
of dc input power that is delivered to the load exterior to the tube. The electron
beam does not extract energy from any de power supply unless the electrons are ac
tually collected by an electrode connected to that power supply. If a separate power
supply is connected between cathode and collector and if the cavity grids intercept a
negligible part of the electron beam, the power supply between the cathode and col
lector will be the only one supplying power to the tube. For a gridded travelingwave
tube, the collector voltage is normally operated at about 40% of the cathode voltage.
Thus the overall efficiency of conversion of de to RF power is almost twice the elec
tronic efficiency. Under this condition the tube is operating with collector voltage
depression.
9 72 Normal Depression and Overdepression
of Collector Voltage
Most gridded travelingwave tubes are very sensitive to variations of collector de
pression voltages below normal depression level, since the tubes operate close to the
knee of the electron spent beam curves. Figure 974 [18] shows the spent beam
curves for a typical gridded travelingwave tube.
Under normal collector depression voltage V
e
at 7.5 kV with full saturated
power output, the spent beam electrons are collected by the collector and returned to
the cathode. Thus the collector current Ie is about 2.09 A. A small amount of elec
trons intercepted by the beam scraper or slowwave circuit contribute the tube body
current for about 0.178 A. Very few electrons with lower kinetic energy reverse the
direction of their velocity inside the collector and fall back onto the output pole
piece. These returning electrons yield a current I
r
of 0.041 A, which is only a small
fraction of the body current lb. These values are shown in Fig. 974.
When the collector voltage is overdepressed from the normal level of 7.5 kV
to the worst case of about 11.5 kV, a greater number of the spent electrons inside
the collector reverse the direction of their velocity by a highly negative collector
voltage and fall back onto the grounded output pole piece because the potential of
the pole piece is 11.5 kV higher than the collector voltage. It can be seen from Fig.
2.0
1.8
\ ~
'(;
~
~
1.6
~
t::. ';:l.
\ ~
t::.
1.4
\
t::.
\
""
1.2
t::.
\ /
'"
/ ~ ~
.,
..
.,
c.
E
co
! 1'0'
.s 1.0
C
. /
.,
/ 0
..
..
:>
. /
l)
0.8
ji
0.6
II
• 0
0.4
/1
/ I
0.2
Body current lb
.,/ I
•_______e4....
e

 /
Current I, caused by returned electrons /
.,,0
0
3
0
2
4 5 6 7 8 9 13 14
Collector voltage  V
c
in kilovolts
Figure 974
Spent beam curves for a typical gridded TWT.
974 that when the collector voltage is overdepressed from 7.5 to  11.5 kV, the
collector current is decreased sharply from 2.01 to 1.14 A and the body current is
increased rapidly from 0.237 to 1.110 A. The body current consists of two parts:
One part is the current caused by the electrons intercepted by the circuit or the beam
scrapers; another part is the current caused by the electrons returned by the overde
pressed collector voltage. Figure 975 [18] shows the impact probability of re
turned electrons by certain overdepressed collector voltage.
Sec. 9.7 HighPower and GriddedControl TravelingWave Tubes 409
Output pole piece
Collector snout
Collector snout
mm
1
.  :== :    
       """"'If..        = .. '\
beam hole     :=   "  " \
, i ) ))
12.77 3 =f"J'=:< Returned
mm         '     'o,.V "\ electrons
I _ ' i ) I
j_  . <,
I
f.
2.12
mm
'1>...J....o12.77 mm ..
CD
CD
CD
indicates that most electrons are returned
hy low overdepression voltage
indicates that most electrons are returned
by high overdepression voltage
indicates that most electrons are returned
by higher overdepression voltage
Figure 975 Impact probability of returned electrons by overdepressed collector
voltage,
Example 971: Gridded TravelingWave Tube (GTWT)
A gridded travelingwave tube is operated with overdepression of collector voltage as
follows:
Overdepression collector voltage:
Returned current:
Mass of heated iron pole piece:
Specific heat H of iron at 20°C:
V
c
= II kV
lr = 0.85 A
mass = 250 mg
H = 0.108 calories/gOC
Determine:
a. The number of electrons returned per second
b. The energy (in eV) associated with these returning electrons in 20 ms
410 Microwave LinearBeam Tubes (0 Type) Chap. 9
c. The power in watts for the returning electrons
d. The heat in calories associated with the returning electrons (a factor for convert
ing joules to calories is 0.238)
e. The temperature T in degrees Celsius for the output iron pole piece [Hint:
T = 0.238Vltj(mass x specific heat)]
f. Whether the output iron pole piece is melted
Solution
a. The number of electrons returned per second is
0.85 8
I, = 1.6 X 10
19
= 5.31 X 10
1
electrons per second
b. The energy is
W = Pt = VI,t = 11 X 10
3
x 5.31 X 10
18
x 20 X 10
3
1.168 X 10
21
eV
c. The power is
P = VI, = 11 x W x 0.85 = 9.35 kW
d. The created heat is
H (heat) = 0.238Pt = 0.238VI,t
= 0.238 x 11 x 10
3
x 0.85 x 20 x 10
3
= 44.51 calories
e. The temperature is
T = 0.238VI,t
mass x specific heat
44.51
250 x 10 3 x 0.108
f. The output iron pole piece is melted.
973 TwoStage Collector Voltage Depression
Technique
When the spent electron beam arrives in the collector, the kinetic energies of each
electron are different. Under the normal operation at a collector voltage of about
40% of the cathode voltage, very few electrons will be returned by the negative col
lector voltage. Consequently, the tube body current is very small and negligible be
cause the returned electrons are the only ones intercepted by the cavity grids and the
slowwave circuit. When the collector is more negative, however, more electrons
with lower energy will reverse their direction of velocity and fall onto the output
Sec. 9.7 HighPower and GriddedControl TravelingWave Tubes 411
pole piece. Thus the tube body current will increase sharply. Since electrons of vari
ous energy classes exist inside the collector, twostage collector voltage depression
may be utilized. Each stage is biased at a different voltage. Specifically, the main
collector may be biased at 40% depression of the cathode voltage for normal opera
tion, but the collector snout may be grounded to the output pole piece for overde
pression operation. As a result, the returned electrons will be collected by the col
lector snout and returned to the cathode even though the collector voltage is
overdepressed to be more negative. Since the collector is cooled by a cooling mech
anism, the overheating problem for overdepression is eased. Figure 976 shows a
structure of twostage collector voltage depression, and Fig. 977 depicts a basic
interconnection of a gridded travelingwave tube with its power supplies [18].
Figure 976 Diagram for twostage
collector depression.
Collector
        _ ~ __ == = = = ~ ~ Returned
E_l_ec_tr_o_n_b_e_am_h_ol_e_, ....__ ~ ~ ~ ~ = ~ ) electrons
Collector snout
Output pole piece
Solenoid
supply
Cathode
I Modulator±I
+

power
~ ..... ICollector
supply
1
L(
* V
k
+
Cathode v J'
I I
k I
/ I
1
J
'  ' ~
J.

GTWT
v
c

Body current I
b

V
p
Collector
+
I
c
_
power
supply
Collector current
Figure 977 Basic interconnection of a gridded travelingwave tube with its
power supplies.
412 Microwave LinearBeam Tubes (0 Type) Chap. 9
9 74 Stabilization of Cathode and Collector
Voltages
The cathode voltage of a gridded travelingwave tube is negative with respect to
ground so that the electrons can be emitted from the cathode. In order to maintain a
constant beam power for a uniform gain, the cathode voltage must be constant. In
addition, the phase shift through the tube is directly related to the beam velocity;
thus high resolution and low ripple are required in the cathode voltage power supply
to avoid undesirable phaseshift variations. Consequently, the cathode power supply
of the gridded travelingwave highpower tube is usually regulated for better than 1%
over line and load changes and is also well filtered because of the critical require
ments on the cathode voltage with respect to ground. The cathode power supply pro
vides the tube body current. Under normal operation the body current is very small
in comparison with the collector current. Figure 978 shows a basic interconnec
tion for a gridded travelingwave tube with two regulated power supplies.
Regulated
cathode +t........,
power
supply
Collector GTWT
Cathode
t
Ic
Regulated
L ~ _ collector +J _
V
_c I
power
supply V
p
Figure 978 Interconnections for a gridded travelingwave highpower tube.
Figure 979 illustrates a voltageregulator circuit for a cathode power supply.
The voltage regulator indicated in the circuit consists of two devices: one differential
amplifier and one tetrode tube. The solidstate differential amplifier amplifies the
difference between the preset reference voltage and the voltage that is one
thousandth of the output voltage. The reference voltage is adjustable to a preset
level. The output voltage of the differential amplifier drives the control grid of the
regulator tube between cutoff and saturation in order to nullify the difference
voltage.
As shown in Fig. 978 the negative terminal of the collector power supply is
connected to the cathode and the positive terminal to the collector electrode. The
• Transformer
4
.\.. Rectifier .1.. Filter ·1'" Voltage regulator .1
5 6
....
Co)
2 3
8
7
9
I
I
+
I I Reference
I
I
>
::
I I
10
3
V
k I
!Vk
I
I
I
I
I
I I
I
I
I I
I I
l __' __..J
rl
I
I
Differential
I
r .1 __,
amplifier
I + I
I I
I I
I I
I I
I !Vk
I
I I
I I
I
I
I I
L_,__.J
V
k
I
•
Negative to cathode
Figure 979 Voltageregulator circuit for cathode power supply.
414 Microwave LinearBeam Tubes (0 Type) Chap. 9
collector depression voltage is the difference of the two regulated supply voltages.
The cathode supply provides the tube body current and the collector supply yields
the collector current. The ratio of the collector current over the body current is
about 10 for an operation of 40% voltage depression. Thus the power delivered to
the tube by the collector supply is about four times larger than the power furnished
by the cathode supply. An electrical transient may occur in the circuit when power
supplies are just being switched on or off. The reasons for an electrical transient may
be caused by two factors:
1. Load changes: When the load of a generator is suddenly increased, a larger
current is needed. Since the generator cannot meet the demand instanta
neously, the output voltage of the generator drops momentarily. Conversely,
when the load of a generator is suddenly decreased, the output voltage drops
accordingly.
2. Switching on or off: When the switch of a generator is just turned on or off, the
armature current in the armature conductors produces armature reaction. The
nature of armature reaction reduces the terminal voltage for lagging loads.
When an electrical transient is created in the circuit, the collector voltage is
overdepressed. As a result, the spent electrons inside the collector reverse the direc
tion of their velocity by the highly negative collector voltage and fall back onto the
grounded output pole piece. The tube body current is sharply increased and the col
lector current is greatly decreased. When the returned electrons impact the output
pole piece, the pole piece will be damaged by high heat. The damage of the output
pole piece creates a mismatch in the interaction circuit and degrades the performance
of the tube. In particular, the tube gain, efficiency, bandwidth, and power output are
affected accordingly by the circuit mismatch when the collector voltage is overde
pressed below the normal depression level. Furthermore, the large body current may
burnout the solidstate differential amplifier of the cathode voltage regulator and
vary the electron beam of the gridded tube. If the damage is beyond the tolerance of
the gridded travelingwave highpower tube, the tube may cease to function.
In order to maintain a constant collector depression voltage, the collector
voltage must be regulated. There are three possible ways to do so [18]:
1. Regulator in series with the collector power supply: In this method a voltage
regulator is incorporated in series with the collector supply as shown in Fig.
9710 so that the output voltage of the collector supply may be regulated at a
certain level with respect to ground. Since the output voltage of the cathode
supply is highly regulated at a certain level, the difference between the two
regulated voltages will produce a wellregulated voltage with respect to ground
at the collector electrode.
2. Regulator in parallel with the collector supply: In this method a voltage regula
tor is inserted in parallel with the collector supply as shown in Fig. 9711 so
that a regulated voltage with respect to ground at normal depression may be
achieved at the collector terminal.
I.. Transformer I.. Rectifier "I" Filter "I • Voltage regulator .. I
4
+
10
3
V
p
Reference
I • 10
3
V
p
Differential
a"mplifier
I
',
I + I
I I
I I
I I
I I
I 1 V
p
I
I 2 I
I I
I I
I :
I ...J
L_
T

1
I
I
_....L_,
r + I
I I
I I
I I
I I
I ~ Vp I
I I
I I
I I
I I
I
6 5
'"
'"
;;
0
'"
~ ~ I I I
7
~ 2 3
'"
.<::
f
L_ ........ _.J
I
V
p
Negative to cathode
~
...
C1I
Figure 9710 Regulator in series with collector supply.
.l:>o
...
0)
1Transformer I" Rectifier
4
..I .. Filter  I.. Voltage regulator .1
V
k
Collector
10
3
Vc
Ref
=
Vc
I
r::l
I I
I I
I I
I 1 I
I 2Vp I
I I
I I
I I
I I
I  I
L __ , __ J
I
I
I
r 1_ ,
I + I
I I
I I
I 1  I
I 2 V
p
I
I I
I I
I I
I I
I I
L __ ::;: __ J
I
6 5
Q)
t>
:3
0
'"
i ~ I "
7
7' 2 3
Q)
e
..c
E
_I I I I I ~
9
Cathode
Figure 9711 Regulator in parallel with collector supply.
Chap. 9 References
417
3. Regulator between the cathode voltage and the collector voltage: In this
method the collector depression voltage is regulated with respect to the
cathode voltage as shown in Fig. 9712. If the collector voltage is overde
pressed above the normal depression value (absolute value), differential am
plifier 2 tends to adjust the cathode voltage below its fixed level (absolute
value). When the cathode voltage is dropped, the collector voltage is read
justed to its normal depression level with respect to ground.
1 +1
I I
I I
I I
I 1 I
I 2
V
p I
I I
I I
I I
I I
L_T_l
I
,_.1_,
I + I
I I
I I
I I
: i V
p
:
: I
I I
I I
L_,_...J
I
388R
2
 V
c
10
3
V
k
Differential
amplifier 2
+
I03R
1
+,
I I
I I
I I
I 2
1
V
k
I
I I
I I
I I
I I
L_..,_...J
I
r.L,
I + I
I I
I I
I I
I i Ii I
I I
I I
I I
I _ I
L_,_J
I
Negative of cathode supply
Negative of collector supply
Figure 9712 Regulator between cathode voltage and collector voltage.
REFERENCES
[I] WARNECKE, R. R., et al., Velocity modulated tubes. In Advances in Electronics, Vol. 3.
Academic Press, New York, 1951.
[2] CHODOROW, M., and C. SUSSKIND, Fundamentals of Microwave Electronics. McGraw
Hill Book Company, New York, 1964.
[3] CHODOROW, M., and T. WESSELBERG, A highefficiency klystron with distributed inter
action. IRE Trans. Electron Devices. EDS, 4455, January 1961.
[4] LARUE, A. D., and R. R. RUBERT, MultiMegawatt Hybrid TWT's at Sband and C
band. Presented to the IEEE Electron Devices Meeting, Washington, D.C., October
1964.
418
Microwave LinearBeam Tubes (0 Type) Chap. 9
[5] HIESLMAIR, H., et aI., State of the art of solidstate and tube transmitters. Microwave J.,
26, No. 10,4648, October 1983.
[6] FEENBERG, E., Notes on velocity modulation. Sperry Gyroscope Laboratories Report.
552ii043, Chapter 1,4144.
[7] STAPRANS, A., et aI., Highpower linear beam tubes. Proc. iEEE. 61, No.3, 299330.
March 1973.
[8] LIEN, E. L., High efficiency klystron amplifier. In Conv. Rec. MOGA 70 (8th Int. Conf.,
Amsterdam, September 1970).
[9] MERDINIAN, G., and J. V. LEBACQZ, High power, permanent magnet focused, Sband
klystron for linear accelerator use. Proc. 5th Int. Conf. of Hyperfrequency Tubes (Paris,
September 1964).
[10] BECK, A. H. W., Space charge wave and slow electromagnetic waves. p. 106, Pergamon
Press, New York, 1985.
[11] KOMPFNER, R., The travelingwave tube as amplifier at microwaves. Proc. iRE. 35,
124127, February 1947.
[12] CHODOROW, M., and R. A. CRAIG, Some new circuits for highpower travelingwave
tubes. Proc.iRE. 45,11061118, August 1957.
[13] ROUMBANIS, T., et aI., A megawatt Xband TWT amplifier with 18% bandwidth. Proc.
HighPower Microwave Tubes Symp.. Vol. 1 (The Hexagon, Fort Monmouth, N.J.,
September 2526, 1962).
[14] RUETZ, A. J., and W. H. YOCOM, Highpower travelingwave tubes for radar systems.
iRE Trans. Mil. Electron.. MILs, 3945, April 1961.
[15] MENDEL, J. T., Helix and coupledcavity travelingwave tubes. Proc. iEEE. 61, No.3,
280298, March 1973.
[16] BRILLOUIN, L., Wave Propagation in Periodic Structures. 2nd ed. Dover, New York,
1953.
[17] CURNOW, H. J., A general equivalent circuit for coupledcavity slowwave structures.
iEEE Trans. on Microwave Theory and Tech., MTT·13, 671675, September 1965.
[18] LIAO, S. Y., The effect of collector voltage overdepression on tube performance of the
gridded travelingwave tubes. Report for Hughes Aircraft Company, EI Segundo, Calif.,
August 1977.
SUGGESTED READINGS
COLLIN, R. E., Foundationsfor Microwave Engineering, Chapter 9. McGrawHill Book Com
pany, New York, 1966.
GANDHI, O. P., Microwave Engineering and Applications. Chapters 9, 10, and 11. Pergamon
Press, New York, 1981.
GEWARTOWSKI, J. W., and H. A. WATSON, Principles of Electron Tubes, Chapters 5, 6, and 10
to 13. D. Van Nostrand Company, Princeton, N.J., 1965.
GILMOUR, A. S., JR., Microwave Tubes. Artech House, Dedham, Mass., 1986.
iEEE Proceedings, 61, No.3, March 1973. Special issue on highpower microwave tubes.
LIAO, S. Y., Microwave Electron Tubes. PrenticeHall, Inc., Englewood Cliffs, N.J., 1988.
Chap. 9 Problems
419
PROBLEMS
Vacuum Tubes
91. A vacuum pentode tube has five grids: a cathode, a control grid, a screen grid, a sup
pressor grid, and an anode plate as shown in Fig. P91.
a. Sketch the equivalent circuit.
b. Derive an expression for the input impedance Zin in terms of the angular frequency
wand the circuit parameters.
c. Determine the transitangle effect.
g
Figure P91
Klystrons
92. The parameters of a twocavity amplifier klystron are as follows:
Beam voltage:
Beam current:
Frequency:
Gap spacing in either cavity:
Spacing between the two cavities:
Effective shunt resistance:
V
o
= 1200 V
1
0
= 28 rnA
f = 8 GHz
d = I mm
L = 4cm
R
sh
= 40 kfl (excluding beam loading)
a. Find the input microwave voltage VI in order to generate a maximum output voltage
V
2
(including the finite transittime effect through the cavities).
b. Determine the voltage gain (neglecting the beam loading in the output cavity).
c. Calculate the efficiency of the amplifier (neglecting the beam loading).
d. Compute the beam loading conductance and show that one may neglect it in the
preceding calculations.
93. A twocavity amplifier klystron has the following characteristics:
Voltage gain: 15 dB
Input power: 5 mW
Total shunt impedance of input cavity R
sh
: 30 kfl
Total shunt impedance of output cavity R
sh
: 40 kfl
Load impedance at output cavity R
e
: 40 kfl
420 Microwave LinearBeam Tubes (0 Type) Chap. 9
Determine:
a. The input voltage (rms)
b. The output voltage (rms)
c. The power delivered to the load in watts
94. A twocavity amplifier klystron has the following parameters:
Beam voltage:
Beam current:
Frequency:
Gap spacing in either cavity:
Spacing between centers of cavities:
Effective shunt impedance:
V
o
=900V
1
0
= 30 rnA
f = 8 GHz
d = I mm
L = 4cm
R'h = 40 kfl
Determine:
a. The electron velocity
b. The dc electron transit time
c. The input voltage for maximum output voltage
d. The voltage gain in decibels
95. Derive Eq. (9249).
Multicavity Klystrons
96. A fourcavity klystron amplifier has the following parameters:
Beam voltage:
Beam current:
Operating frequency:
dc charge density:
RF charge density:
Velocity perturbation:
V
o
= 20 kV
1
0
= 2 A
f = 9 GHz
po = 10
6
C/m
3
p = 10
8
C/m
3
"If = 10
5
mls
Determine:
a. The dc electron velocity
b. The dc phase constant
c. The plasma frequency
d. The reduced plasma frequency for R = 0.5
e. The beam current density
f. The instantaneous beam current density
97. A fourcavity CW klystron amplifier has the following parameters:
Beam voltage:
Beam current:
Gap distance:
Operating frequency:
Signal voltage:
Beam coupling coefficient:
dc electron charge density:
V
o
= 30 kV
1
0
= 3 A
d = 1 cm
f = 8 GHz
VI = 15 V(rms)
{3i = {3o = 1
po = 10
7
C/m
3
Chap. 9 Problems 421
Compute:
a. The dc electron velocity
b. The dc electron phase constant
c. The plasma frequency
d. The reduced plasma frequency for R = 0.4
e. The reduced plasma phase constant
f. The transit time across the input gap
g. The modulated electron velocity leaving the input gap
98. A twocavity klystron amplifier has the following parameters:
Beam voltage:
Beam current:
Operating frequency:
Beam coupling coefficient:
dc electron charge density:
Signal voltage:
Cavity shunt resistance:
Total shunt resistance including load:
V
o
= 30 kV
1
0
= 3 A
f = 10 GHz
/3i = /30 = 1
po = \07 C/m
3
VI = 15 V(rms)
R
sh
= 1 kfi
R
sht
= 10 kfi
Calculate:
a. The plasma frequency
b. The reduced plasma frequency for R = 0.4
c. The induced current in the output cavity
d. The induced voltage in the output cavity
e. The output power delivered to the load
f. The power gain
g. The electronic efficiency
99. A fourcavity klystron amplifier has the following parameters:
Beam voltage:
Beam current:
Operating frequency:
Beam coupling coefficient:
dc electron charge density:
Signal voltage:
Cavity shunt resistance:
Total shunt resistance including load:
Determine:
a. The plasma frequency
b. The reduced plasma frequency for R = 0.4
c. The induced current in the output cavity
d. The induced voltage in the output cavity
e. The output power delivered to the load
f. The electronic efficiency
V
o
= 20 kV
1
0
= 1.5 A
f = 2 GHz
/3i = /30 = 1
po = 10
6
C/m
3
VI = 2 V(rms)
R
sh
= 2 kfi
R
sht
= 1 kfi
422 Microwave LinearBeam Tubes (0 Type) Chap. 9
Reflex Klystrons
9·10. A reflex klystron operates at the peak mode of n = 2 with
Beam voltage:
Beam current:
Signal voltage:
V
o
= 300 Y
1
0
= 20 rnA
VI = 40 Y
Determine:
a. The input power in watts
b. The output power in watts
c. The effficiency
9·11. A reflex klystron operates under the following conditions:
V
o
= 500 V
R
sh
= 20 kfl
!, = 8 GHz
L = I mm is the spacing between repeller and cavity
The tube is oscillating at!, at the peak of the n = 2 mode or 1~ mode. Assume that the
transit time through the gap and the beam loading effect can be neglected.
a. Find the value of repeller voltage V,.
b. Find the direct current necessary to give microwave gap voltage of 200 V.
c. Calculate the electronic efficiency.
912. A reflex klystron operates at the peak of the n = 2 mode. The de power input is
40 mW and VI/VO = 0.278. If 20% of the power delivered by the beam is dissipated in
the cavity walls, find the power delivered to the load.
913. A reflex klystron operates at the peak of the n = 1 or ~ mode. The dc power input is
40 mW and the ratio of VI over V
o
is 0.278.
a. Determine the efficiency of the reflex klystron.
b. Find the total output power in milliwatts.
c. If 20% of the power delivered by the electron beam is dissipated in the cavity walls,
find the power delivered to the load.
TravelingWave Tubes (TWTs)
914. A travelingwave tube (TWT) has the following characteristics:
Beam voltage:
Beam current:
Frequency:
Circuit length:
Characteristic impedance:
Determine:
a. The gain parameter C
b. The power gain in decibels
V
o
= 2 kY
1
0
= 4 rnA
! = 8 GHz
N = 50
2
0
= 20n
Chap. 9 Problems 423
915. A TWT operates under the following parameters:
Beam current:
Beam voltage:
Characteristic impedance of helix:
Circuit length:
Frequency:
1
0
= 50 rnA
Va = 2.5 kV
2
0
= 6.75 n
N = 45
f = 8 GHz
Determine:
a. The gain parameter C
b. The output power gain A
p
in decibels
c. All four propagation constants
d. The wave equations for all four modes in exponential form
916. An Otype travelingwave tube operates at 2 GHz. The slowwave structure has a pitch
angle of 5.7°. Determine the propagation constant of the traveling wave in the tube. It
is assumed that the tube is lossless.
917. An Otype helix travelingwave tube operates at 8 GHz. The slowwave structure has a
pitch angle of 4.4° and an attenuation constant of 2 Np/m. Determine the propagation
constant "y of the traveling wave in the tube.
918. In an Otype travelingwave tube, the acceleration voltage (beam voltage) is 3000 V.
The characteristic impedance is IOn. The operating frequency is 10 GHz and the
beam current is 20 rnA. Determine the propagation constants of the four modes of the
traveling waves.
919. Describe the structure of an 0 type travelingwave tube and its characteristics; then ex
plain how it works.
920. In an 0 type travelingwave tube, the acceleration voltage is 4000 V and the magnitude
of the axial electric field is 4 VIm. The phase velocity on the slowwave structure is
1.10 times the average electron beam velocity. The operating frequency is 2 GHz. De
termine the magnitude of velocity fluctuation.
Gridded TravelingWave Tubes (GTWTs)
921. The current I, caused by the returning electrons at an overdepression voltage of
11.5 kV in a GfWT is about 0.973 A as shown by the spent beam curve in Fig.
974.
a. Calculate the number of electrons returned per second.
b. Determine the energy in electron volts associated with these returning electrons in
1 ms for part (a).
c. Find the power in watts for the returning electrons.
922. The output iron pole piece of a GfWT has the following characteristics:
1. The specific heat H at 20°C is 0.108 callg°C.
2. A factor for converting joules to calories is 0.238.
3. The mass of the heated iron pole piece is assumed to be 203.05 mg.
4. The duration time t of the collector depression transient voltage of 11.5 kV is
15 ms.
5. The melting point of iron is 1535°C.
424
Microwave LinearBeam Tubes (0 Type) Chap. 9
Using these characteristics,
a. Calculate the heat in calories associated with the returning electrons at an overde
pression voltage of 11.5 kV.
b. Compute the temperature T in degrees Celsius for the output iron pole piece. [Hint:
T = O.238Vlt/(mass x specific heat).]
c. Determine whether the output iron pole piece is melted.
923. The efficiency of a GfWT is expressed as
RFP.
c
RFP.
c
1]==
P
dc
Vol
o
If the cathode voltage is 18 kV and the collector voltage is depressed to 7.5 kV de
termine the efficiency of the GfWT.
Chapter 10
Microwave CrossedField
Tubes (M Type)
100 INTRODUCTION
In the previous chapter, several commonly used linearbeam tubes were described in
detail. In these tubes, the dc magnetic field that is in parallel with the dc electric
field is used merely to focus the electron beam. In crossedfield devices, however,
the dc magnetic field and the dc electric field are perpendicular to each other. In all
crossedfield tubes, the dc magnetic field plays a direct role in the RF interaction
process.
Crossedfield tubes derive their name from the fact that the dc electric field and
the dc magnetic field are perpendicular to each other. They are also called Mtype
tubes after the French TPOM (tubes apropagation des ondes achamps magnetique:
tubes for propagation of waves in a magnetic field). In a crossedfield tube, the elec
trons emitted by the cathode are accelerated by the electric field and gain velocity,
but the greater their velocity, the more their path is bent by the magnetic field. If an
RF field is applied to the anode circuit, those electrons entering the circuit during
the retarding field are decelerated and give up some of their energy to the RF field.
Consequently, their velocity is decreased, and these slower electrons will then travel
the dc electric field far enough to regain essentially the same velocity as before. Be
cause of the crossedfield interactions, only those electrons that have given up
sufficient energy to the RF field can travel all the way to the anode. This phe
nomenon would make the Mtype devices relatively efficient. Those electrons enter
ing the circuit during the accelerating field are accelerated by means of receiving
enough energy from the RF field and are returned back toward the cathode. This
backbombardment of the cathode produces heat in the cathode and decreases the
operational efficiency.
426 Microwave CrossedField Tubes (M Type) Chap. 10
In this chapter, several commonly used crossedfield tubes such as magnetrons,
forwardwave crossedfield amplifiers (FWCFAs), backwardwave crossedfield am
plifiers (BWCFAs or amplitrons), and backwardwave crossedfield oscillators
(BWCFOs or carcinotrons) are studied.
Cylindrical magnetron: The cylindrical magnetron was developed by Boot and
Randall in early 1940.
Coaxial magnetron: The coaxial magnetron introduced the principle of inte
grating a stabilizing cavity into the magnetron geometry.
Voltagetunable magnetron: The voltagetunable magnetron has the cathode
anode geometry of the conventional magnetron, but its anode can be tuned
easily.
Inverted magnetron: The inverted magnetron has the inverted geometry of the
conventional magnetron with the cathode placed on the outside surrounding
the anode and microwave circuit.
Forwardwave crossedfield amplifier (FWCFA): The forwardwave crossed
field amplifier is also called the Mtype forwardwave amplifier.
Backwardwave crossedfield amplifier (BWCFA): The backwardwave crossed
field amplifier was developed by Raytheon Company in 1960 and its trade
name is Amplitron. It is a broadband, highpower, highgain, and high
efficiency microwave tube, and it has many applications such as in airborne
radar systems and spaceborne communications systems.
Backwardwave crossedfield oscillator (BWCFO): In 1960, the French Com
pany developed a new type of crossedfield device in which an injection gun
replaced the conventional cylindrical cathode of the magnetron. Its trade name
is Carcinotron, and it is also called the Mtype backwardwave oscillator.
All of these crossedfield electron tubes are tabulated in Table 1001.
Maser effect
I
Nonreentrant
I
Nonresonant
,_1.,
Forward wave Backward wave
n ,I
Reentrant Nonreentrant Reentrant
ImicAI [ ' m ~ l " " I
Crossedfield tubes (M type)
I
I
Resonant
I
Standing wave
I
Reentrant
Sec. 10.1 Magnetron Oscillators 427
10·1 MAGNETRON OSCILLATORS
Hull invented the magnetron in 1921 [1], but it was only an interesting laboratory
device until about 1940. During World War II, an urgent need for highpower mi
crowave generators for radar transmitters led to the rapid development of the mag
netron to its present state.
All magnetrons consist of some form of anode and cathode operated in a dc
magnetic field normal to a dc electric field between the cathode and anode. Because
of the crossed field between the cathode and anode, the electrons emitted from the
cathode are influenced by the crossed field to move in curved paths. If the dc mag
netic field is strong enough, the electrons will not arrive in the anode but return in
stead to the cathode. Consequently, the anode current is cut off. Magnetrons can be
classified into three types:
1. Splitanode magnetron: This type of magnetron uses a static negative resis
tance between two anode segments.
2. Cyclotronfrequency magnetrons: This type operates under the influence of
synchronism between an alternating component of electric field and a periodic
oscillation of electrons in a direction parallel to the field.
3. Travelingwave magnetrons: This type depends on the interaction of electrons
with a traveling electromagnetic field of linear velocity. They are customarily
referred to simply as magnetrons.
Negativeresistance magnetrons ordinarily operate at frequencies below the mi
crowave region. Although cyclotronfrequency magnetrons operate at frequencies in
microwave range, their power output is very small (about 1 W at 3 GHz), and their
efficiency is very low (about 10% in the splitanode type and 1% in the singleanode
type). Thus, the first two types of magnetrons are not considered in this text. In this
section, only the travelingwave magnetrons such as the cylindrical magnetron, lin
ear (or planar) magnetron, coaxial magnetron, voltagetunable magnetron, inverted
coaxial magnetron, and the frequencyagile magnetron will be discussed.
10·1·1 Cylindrical Magnetron
A schematic diagram of a cylindrical magnetron oscillator is shown in Fig. 1011.
This type of magnetron is also called a conventional magnetron.
In a cylindrical magnetron, several reentrant cavities are connected to the
gaps. The dc voltage V
o
is applied between the cathode and the anode. The magnetic
flux density B
o
is in the positive z direction. When the dc voltage and the magnetic
flux are adjusted properly, the electrons will follow cycloidal paths in the cathode
anode space under the combined force of both electric and magnetic fields as shown
in Fig. 1012.
Equations of electron motion. The equations of motion for electrons in a
cylindrical magnetron can be written with the aid of Eqs.(l25a) and (l25b) as
428 Microwave CrossedField Tubes (M Type) Chap. 10
Figure 10·1·1 Schematic diagram of a cylindrical magnetron.
Electron
path
Figure 10·1·2 Electron path in a cylin
drical magnetron.
(1011)
(1012)
(1013)
where!... = 1.759 X 1011 C/kg is the chargetomass ratio of the electron and
m
B
o
= B
z
is assumed in the positive z direction.
Rearrangement of Eq. (1012) results in the following form
d ( 2 dcP) _ e dr _ 1 d 2
dt r di  mBzr dt  "2 We dt (r )
where We = !...B
z
is the cyclotron angular frequency. Integration of Eq. (1013)
m
yields
(1014)
Sec. 10.1 Magnetron Oscillators 429
(1015)
at r = a, where a is the radius of the cathode cylinder, and ~ = 0, con
stant =  ~ wca 2. The angular velocity is expressed by
dcP = !w
c
(I _a
2
)
dt 2 r
2
Since the magnetic field does no work on the electrons, the kinetic energy of the
electron is given by
1
m"V
2
= eV
2
(1016)
(101 7)
However, the electron velocity has rand cP components such as
"V2 = 2e V = "V; + "V~ = (dr)2 + (r d
cP
)2
m dt dt
at r = b, where b is the radius from the center of the cathode to the edge of the an
ode, V = Yo, and dr /dt = 0, when the electrons just graze the anode, Eqs. (1015)
and (1017) become
~ ~ = ~ w c ( l  ::)
b2 (d
cP
)
2
= 2e V
o
dt m
Substitution of Eq. (1018) into Eq. (1019) results in
b
2
[iw
c
(1  ::) r= ~ V o
(1018)
(1019)
(10110)
The electron will acquire a tangential as well as a radial velocity. Whether the elec
tron will just graze the anode and return toward the cathode depends on the relative
magnitudes of V
o
and B
o
. The Hull cutoff magnetic equation is obtained from Eq.
(10110) as
(10111)
(10112)
This means that if B
o
> B
Oc
for a given V
o
, the electrons will not reach the anode.
Conversely, the cutoff voltage is given by
e ( a
2
)2
V
Oc
= 8m
B
'6b
2
1  b
2
This means that if V
o
< V
Oc
for a given B
o
, the electrons will not reach the anode.
Equation (10112) is often called the Hull cutoff voltage equation.
430 Microwave CrossedField Tubes (M Type) Chap. 10
Example 1011: Conventional Magnetron
An Xband pulsed cylindrical magnetron has the following operating parameters:
Anode voltage:
Beam current:
Magnetic flux density:
Radius of cathode cylinder:
Radius of vane edge to center:
Compute:
V
o
= 26 kV
1
0
= 27 A
B
o
= 0.336 Wb/m
2
a = 5 cm
b = 10 cm
a. The cyclotron angular frequency
b. The cutoff voltage for a fixed B
o
c. The cutoff magnetic flux density for a fixed V
o
Solution
a. The cyclotron angular frequency is
e
We = B
o
= 1.759 X 1011 X 0.336 = 5.91 X 10
10
rad
m
b. The cutoff voltage for a fixed B
o
is
V
ac
= ~ X 1.759 X 1011 (0.336)2(10 X 10
2
)2 (I  1 5 ~ S
= 139.50 kV
c. The cutoff magnetic flux density for a fixed V
o
is
B
rk
= (8 x 26 x 10
3
x I )1
/
2[10 X 10
2
(I  1
5
0
22
)]1
1.759 X 1011
= 14.495 mWb/m
2
Cyclotron angular frequency. Since the magnetic field is normal to the
motion of electrons that travel in a cycloidal path, the outward centrifugal force is
equal to the pulling force. Hence
m"lf
2
 = e"lfB
R
(10113)
where R = radius of the cycloidal path
"If = tangential velocity of the electron
The cyclotron angular frequency of the circular motion of the electron is then
given by
"If eB
w ==
e R m
(10114)
Sec. 10.1 Magnetron Oscillators
431
(l0115)
The period of one complete revolution can be expressed as
T = 27T = 27Tm
w eB
Since the slowwave structure is closed on itself, or "reentrant," oscillations are pos
sible only if the total phase shift around the structure is an integral multiple of 27T
radians. Thus, if there are N reentrant cavities in the anode structure, the phase shift
between two adjacent cavities can be expressed as
,/,. = 27Tm
'l'n N
(10116)
where n is an integer indicating the nth mode of oscillation.
In order for oscillations to be produced in the structure, the anode dc voltage
must be adjusted so that the average rotational velocity of the electrons corresponds
to the phase velocity of the field in the slowwave structure. Magnetron oscillators
are ordinarily operated in the 7T mode. That is,
(7T mode) (10117)
(l0118)
Figure 1013 shows the lines of force in the 7T mode of an eightcavity magnetron.
It is evident that in the 7T mode the excitation is largely in the cavities, having oppo
site phase in successive cavities. The successive rise and fall of adjacent anode
cavity fields may be regarded as a traveling wave along the surface of the slowwave
structure. For the energy to be transferred from the moving electrons to the traveling
field, the electrons must be decelerated by a retarding field when they pass through
each anode cavity. If L is the mean separation between cavities, the phase constant
of the fundamentalmode field is given by
a _ 27Tn
fJO  NL
The travelingwave field of the slowwave structure may be obtained by solving
Figure 10·1·3 Lines of force in 11"
mode of eightcavity magnetron.
432
Microwave CrossedField Tubes (M Type) Chap. 10
Maxwell's equations subject to the boundary conditions. The solution for the funda
mental e/> component of the electric field has the form [1]
(10119)
(10120)
where £1 is a constant and {3o is given in Eq. (10118). Thus, the traveling field of
the fundamental mode travels around the structure with angular velocity
de/> W
dt {3o
where 1can be found from Eq. (10119).
When the cyclotron frequency of the electrons is equal to the angular fre
quency of the field, the interactions between the field and electron occurs and the
energy is transferred. That is,
de/>
We = {3o dt
(10121)
Power output and efficiency. The efficiency and power output of a mag
netron depend on the resonant structure and the dc power supply. Figure 1014
shows an equivalent circuit for a resonator of a magnetron.
where Y
e
= electronic admittance
V = RF voltage across the vane tips
C = capacitance at the vane tips
L = inductance of the resonator
Gr = conductance of the resonator
G = load conductance per resonator
"r''''       . ,      ~ "     y  J
Beam Resonator Load
A
A'
v t c
L G,
B
B'
G
Figure 1014 Equivalent circuit for
one resonator of a magnetron.
Each resonator of the slowwave structure is taken to comprise a separate reso
nant circuit as shown in Fig. 1014. The unloaded quality factor of the resonator is
given by
Q
= WoC
un G
r
(10122)
where Wo = 27Tfo is the angular resonant frequency. The external quality factor of
the load ciruit is
Sec. 10.1 Magnetron Oscillators
Q
= WoC
ex G
e
433
(10123)
Then the loaded Qe of the resonant circuit is expressed by
woC
Qe = G
r
+ G
e
The circuit efficiency is defined as
G
e
1]c = G
e
+ G
r
G
e
Gex 1 + Qex/Qun
(10124)
(10125)
The maximum circuit efficiency is obtained when the magnetron is heavily loaded,
that is, for G
e
Gr. Heavy loading, however, makes the tube quite sensitive to the
load, which is undesirable in some cases. Therefore, the ratio of QeIQex is often cho
sen as a compromise between the conflicting requirements for high circuit efficiency
and frequency stability.
The electronic efficiency is defined as
P
gen
Vol
o
 Plos!
1] = =
e P
dc
Vol
o
where P
gen
= RF power induced into the anode circuit
P
dc
= Vol
o
power from the dc power supply
V
o
= anode voltage
1
0
= anode current
Plos! = power lost in the anode circuit
The RF power generated by the electrons can be written as
(10126)
(10127)
P
gen
= Vol
o
 Plos!
m W5
= Vol
o
 1
0
2e 13 2 + B;
=!N 1V12
woC
2 Qe
where N = total number of resonators
V = RF voltage across the resonator gap
Emax = M
1
IV 1/L is the maximum electric field
M1 = / = 1 for small 5 is the gap factor for the 7Tmode
operation
13 = phase constant
B
z
= magnetic flux density
L = centertocenter spacing of the vane tips
434 Microwave CrossedField Tubes (M Type) Chap. 10
The power generated may be simplified to
_ NL
2
wOC 2
P
gen
 2
M
rQe E
max
The electronic efficiency may be rewritten as
(10128)
P
gen
TIe = VoIo =
mW6
1  2eV
o
/32
IomMrQe
+ 2
BzeNL woC
(10129)
Example IO·I·IA: Pulsed Magnetron
An Xband pulsed conventional magnetron has the following operating parameters:
Anode voltage:
Beam current:
Operating frequency:
Resonator conductance:
Loaded conductance:
Vane capacitance:
Duty cycle:
Power loss:
Compute:
V
o
= 5.5 kV
1
0
= 4.5 A
f = 9 X 10
9
Hz
G, = 2 X 10
4
mho
G
e
= 2.5 X 10
5
mho
C = 2.5 pF
DC = 0.002
Ploss = 18.50 kW
a. The angular resonant frequency
b. The unloaded quality factor
c. The loaded quality factor
d. The external quality factor
e. The circuit efficiency
f. The electronic efficiency
Solution
a. The angular resonant frequency is
w, = 2 x 9 X 10
9
= 56.55 X 10
9
rad
b. The unloaded quality factor is
56.55 x 10
9
x 2.5 X 10
12
Q
 = 707
un  2 X 104
c. The loaded quality factor is
56.55 x 10
9
x 2.5 X 10
12
= 628
QI = 2 x 10 4 + 2.5 x 10 5
Sec. 10.1 Magnetron Oscillators 435
d. The external quality factor is
56.55 x 10
9
x 2.5 X 1 O ~ 1 2 = 5655
Qex = 2.5 X 105
e. The circuit efficiency is
1/c = I + 5655/707 = 11.11%
f. The electronic efficiency is
5.5 x 10
3
x 4.5  18.5 x
1/' = 5.5 X 10
3
x 4.5
J03 = 25.25%
State of the art. For many years, magnetrons have been the highpower
sources in operating frequencies as high as 70 GHz. Military radar relies on conven
tional travelingwave magnetrons to generate highpeakpower RF pulses. No other
microwave devices can perform the same function with the same size, weight,
voltage, and efficiencyrange advantage as can the conventional magnetrons. At the
present state of the art, a magnetron can deliver a peak power output of up to
40 MW with the dc voltage in the order of 50 kV at the frequency of 10 GHz. The
average power outputs are up to 800 kW. Its efficiency is very high, ranging from 40
to 70%. Figure 1015 shows the state of the art for U.S. highpower magnetrons.
20 30 10 0.4 0.6 1 2
FREQUENCY. GHz
0.2 0.05 0.1
.....
....
....
~
.. ...
......
.....
....... ...
1
...
...
...
I
0.2
10
8
0.6
0.5
0.4
0.8
0.3
20
I
..: 3
~
:>
o 2
0:
~
'"
<l
~
Figure 1015 State of the art for U.S. highpower magnetrons.
436 Microwave CrossedField Tubes (M Type) Chap. 10
Beacon magnetronsminiature conventional magnetronsdeliver peak out
puts as high as 3.5 kW, yet weigh less than two pounds. These devices are ideal for
use where a very compact, lowvoltage source of pulsed power is required, such as
in airborne, missile, satellite, or Doppler systems. Most of the beacon magnetrons
exhibit negligible frequency shift and provide longlife performance under the most
severe environmental and temperature conditions.
The Litton L5080 pulse magnetron, shown in Fig. 1016, is a typical vane
strap magnetron oscillator. It has a maximum peak output power of 250 kW at a fre
quency range from 5.45 to 5.825 Ghz. Its duty cycle is 0.0012.
Figure 1016 Photograph of Litton L5080 magnetron. (Courtesy of Litton Elec
tron Tube Division.)
10·1·2 Linear Magnetron
The schematic diagram of a linear magnetron is shown in Fig. 1017. In the linear
magnetron as shown in Fig. 1017, the electric field Ex is assumed in the positive x
direction and the magnetic flux density B
z
in the positive z direction. The differential
equations of motion of electrons in the crossedelectric and magnetic fields can be
written from Eqs. (l32a, b, c) as
d
2
x = !(Ex + B
z
d
y
) (l0130)
dt
2
m dt
B ; ~
~  +  + 
Cathode I
Figure 10·17 Schematic diagram of a
linear magnetron.
Sec. 10.1 Magnetron Oscillators 437
(10131)
(10132)
(10133)
where.!!... = 1.759 X 10" C/kg is the chargetomass of an electron
m
B
z
= magnetic flux density in positive z direction
Ex = electric field in positive x direction
In general, the presence of space charges causes the field to be a nonlinear
function of the distance x, and the complete solution of Eqs. (10130) through
(10132) is not simple. Equation (10131), however, can be integrated directly.
Under the assumptions that the electrons emit from the cathode surface with zero
initial velocity and that the origin is the cathode surface, Eq. (10131) becomes
dy e
 = Bzx
dt m
Equation (10133) shows that, regardless of space charges, the electron velocity
parallel to the electrode surface is proportional to the distance of the electron from
the cathode and to the magnetic flux density B
z
• How far the electron moves from
the cathode depends on B
z
and on the manner in which the potential V varies with x,
which in turn depends on the spacecharge distribution, anode potential, and elec
trode spacing.
If the space charge is assumed to be negligible, the cathode potential zero, and
the anode potential V
o
, the differential electric field becomes
dV V
o

dx d
where V
o
= anode potential in volts
d = distance between cathode and anode in meters
(10134)
(10135)
(10136)
Substitution of Eq. (10134) into Eq. (10130) yields
d
2
x = !!....(Vo _ B d
Y
)
dt
2
m d z dt
Combination of Eqs. (10133) and (10135) results in
d
2
x (e)2 eV
o
dt2 + m B
z
x  m d = 0
Solution of Eq. (10136) and substitution of the solution into Eq. (10133)
yield the following equations for the path of an electron with zero velocity at
cathode (origin point) as
V
o
x = Bd[l  cos (wct)]
zW
c
(10137)
438 Microwave CrossedField Tubes (M Type)
y = B V
o
d[wet  sin (Wet)]
zWe
z = 0
Chap. 10
(1O138)
(10139)
where We = !! B
z
is the cyclotron angular frequency
m
Ie = 2.8 X 10
6
B
z
is the cyclotron frequency in Hz
Equations (10137) through (10139) are those of a cycloid generated by a
point on a circle of radius Vo/(Bzwed) rolling on the plane of the cathode with angu
lar frequency We. The maximum distance to which the electron moves in a direction
normal to the cathode is 2V
o
m/(B;ed). When this distance is just equal to the anode
cathode distnce d, the electrons graze the anode surface, and the anode current is cut
off. Then the cutoff condition is
(10140)
(10141)
Let a constant K equal to
d
2
B; 2m
K =  =  = 1.14 X 10
11
V
o
e
When the value of K is less than 1.14 X 10
11
, electrons strike the anode; when the
value is larger than 1.14 x 10
1
1, they return to the cathode. Figure 1018 shows
the electron path.
Cathode
Figure 10·1·8 Electron path in a linear
magnetron.
From Eq. (10140), the Hull cutoff voltage for a linear magnetron is given by
I e 2 2
V
Oc
= Bod
2m
(10142)
(10143)
where B
o
= B
z
is the magnetic flux density in the positive z direction. This means
that if V
o
< V
Oc
for a given B
o
, the electrons will not reach the anode.
Similarly, the Hull cutoff magnetic flux density for a linear magnetron is ex
pressed as
B
Oc
= !
d e
This means that if B
o
> B
oe
for a given V
o
, the electrons will not reach the anode.
Sec. 10.1 Magnetron Oscillators 439
Example 1012: Linear Magnetron
A linear magnetron has the following operating parameters:
Anode voltage:
Cathode current:
Magnetic flux density:
Distance between cathode and anode:
Compute:
V
o
= 10 kV
1
0
= I A
B
o
= 0.01 Wb/m
2
d = 5 cm
a. The Hull cutoff voltage for a fixed B
o
b. The Hull cutoff mangetic flux density for a fixed V
o
Solution
a. The Hull cutoff voltage is
V
Oc
= ~ x 1.759 X 1011 x (0.01)2 x (5 X 10
2
)2
= 22.00 kV
b. The Hull magnetic flux density is
I (2 x 10 x 10
3
)1
/
2
B
Oc
= 5 X 10
2
x 1.759 X 1011
= 6.74 mWb/m
2
Hartree condition. The Hull cutoff condition determines the anode voltage
or magnetic field necessary to obtain nonzero anode current as a function of the
magnetic field or anode voltage in the absence of an electromagnetic field. The
Hartree condition can be derived as follows and as shown in Fig. 1019.
The electron beam lies within a region extending a distance h from the
cathode, where h is known as the hub thickness. The spacing between the cathode
and anode is d. The electron motion is assumed to be in the positive y direction with
a velocity
I dV
B
o
dx
(10144)
Figure 1019 Linear model of a magnetron.
440 Microwave CrossedField Tubes (M Type) Chap. 10
where B
o
= B
z
is the magnetic flux density in the positive z direction
V = potential
From the principle of energy conservation, we have
tm 'Y; = eV
Combining Eqs. (10144) and (10145) yields
(
dV)2 = 2eVB"5
dx m
This differential equation may be rearranged as
(
m )1/2 dV
2eB
o
\IV = dx
(10145)
(10146)
(10147)
(10148)
Integration of Eq. (10147) yields the potential within the electron beam as
V = eB"5 x2
2m
where the constant of integration has been eliminated for V = 0 at x = O. The po
tential and electric field at the hub surface are given by
V(h) = ~ B " 5 h 2
2m
and
dV €. 2
Ex =  = Bah
dx m
The potential at the anode is thus obtained from Eq. (10150) as
Va =  fd Ex dx
a
=  f Ex dx  rEx dx
a h
= V(h) + !...B"5h(d  h)
m
= !...B"5h(d  h/2)
m
(10149)
(10150)
(10151)
The electron velocity at the hub surface is obtained from Eqs. (10144) and
(10150) as
e
'YAh) = Bah
. m
(10152)
Sec. 10.1 Magnetron Oscillators
441
(10154)
(10153)
For synchronism, this electron velocity is equal to the phase velocity of the slow
wave structure. That is,
w e
 = Boh
f3 m
For the 7Tmode operation, the anode potential is finally given by
V
Oh
= wBod _ !!!:. w2
f3 2e f32
This is the Hartree anode voltage equation that is a function of the magnetic flux
density and the spacing beween the cathode and anode.
Example 1012a: Linear Magnetron
A linear magnetron has the following operation parameters:
Anode voltage:
Cathode current:
Operating frequency:
Magnetric flux density:
Hub thickness:
Distance between anode and cathode:
Calculate:
a. The electron velocity at the hub surface
b. The phase velocity for synchronism
c. The Hartree anode voltage
Solution
V
o
= 15 kV
1
0
= 1.2 A
f = 8 GHz
8
0
= 0.015 Wb/m
2
h=2.77cm
d = 5 cm
a. The electron velocity is
"If = 1.759 X 1011 x 0.015 x 2.77 x 10
2
= 0.73 X 10
3
mls
b. The phase velocity is
W
"If
ph
= Ii = 0.73 X 10
8
mls
c. The Hartree anode voltage is
I
V;Oh = 0.73 X 10
8
x 0.015 x 5 x 10
2
 X (073 X 10
8
)2
2 x 1.759 X 1011 .
= 5.475 X 10
4
 1.515 X 10
4
= 39.60 kV
442 Microwave CrossedField Tubes (M Type) Chap. 10
10·1·3 Coaxial Magnetron
The coaxial magnetron is composed of an anode resonator structure surrounded by
an innersingle, highQ cavity operating in the TE
OlI
mode as shown in Fig.
10110.
The slots in the back walls of alternate cavities of the anode resonator structure
tightly couple the electric fields in these resonators to the surrounding cavity. In the
Unstrapped
resonators
Electric field
in cavity
~   ~ r             ~  ~ ~
' L" _
Coupling slots
(a) Cross section
External
cavity
Magnetic flux
density
Coupling
slot
Vane
resonator
Cathode Itl>l.
Tuning
piston
Cavity mode
attenuator
B
z
Inner
circuitmode
attenuator
(b) Cutaway view
TE
Oll
mode
electric field
lines
Stabilizing cavity
RF output
Figure 10110 Schematic diagram of a coaxial magnetron. (Courtesy of Varian
Associates. Inc.)
Sec. 10.1 Magnetron Oscillators 443
1Tmode operation, the electric fields in every other cavity are in phase, and so they
couple in the same direction into the surrounding cavity. As a result, the surround
ing coaxial cavity stabilizes the magnetron in the desired 1Tmode oepration.
In the desired TE
OIl
mode, the electric fields follow a circular path within the
cavity and reduce to zero at the walls of the cavity. Current flow in the TEoI' mode
is in the walls of the cavity in circular paths about the axis of the tube. The unde
sired modes are damped out by the attenuator within the inner slotted cylinder near
the ends of the coupling slots. The tuning mechanism is simple and reliable. As the
straps are not required, the anode resonator for the coaxial magnetron can be larger
and less complex than for the conventional strapped magnetron. Thus cathode load
ing is lower, and voltage gradients are reduced.
The Varian SFD333TM magnetron, as shown in Fig. 10111 is a typical X
band coaxial magnetron. It has a minimum peak power of 400 kW at a frequency
range from 8.9 to 9.6 GHz. Its duty cycle is 0.0013. The nominal anode voltage is
32 kV, and the peak anode current is 32 A.
Figure 10111 Photograph of Varian
SFD333TM coaxial magnetron
(Courtesy of Varian Associates. Inc.)
1014 Voltage Tunable Magnetron
The voltagetunable magnetron is a broadband oscillator with frequency changed by
varying the applied voltage between the anode and sole. As shown in Fig. 10112,
the electric beam is emitted from a short cylindrical cathode at one end of the
device. Electrons are formed into a hollow beam by the electric and magnetic forces
near the cathode and then are accelerated radically outward from the cathode. The
electron beam is then injected into the region between the sole and the anode. The
beam rotates about the sole at the rate controlled by the axial magnetic field and the
dc voltage applied between the anode and the sole.
The voltagetunable magnetron uses a lowQ resonator, and its bandwidth may
exceed 50% at lowpower levels. In the 1Tmode operation, the bunch process of the
hollow beam occurs in the resonator, and the frequency of oscillation is determined
by the rotational velocity of the electron beam. In other words, the oscillation fre
quency can be controlled by varying the applied dc voltage between the anode and
444 Microwave CrossedField Tubes (M Type) Chap. 10
Control electrode
Anode circuit
9ffiffiffP
d1t1dl±H1
View of anode from sole
Emiller _o_=__
Figure 10112 Crosssection view of
a voltagetunable magnetron. (Courtesy
of Varian Associates, Inc.)
sole. Power output can be adjusted to some extent through the use of the control
electrode in the electron gun. At highpower levels and high frequencies, the band
width percentage is limited. However, at lowpower levels and low frequencies, the
bandwidth may approach 70%.
10·1·5 Inverted Coaxial Magnetron
A magnetron can be built with the anode and cathode invertedthat is, with the
cathode surrounding the anode. For some time, the basic problem of mode suppres
sion prevented its use. In an inverted coaxial magnetron, the cavity is located inside
a slotted cylinder, and a resonator vane array is arranged on the outside. The cathode
is built as a ring around the anode. Figure 10113 shows the schematic diagram of
an inverted coaxial magnetron.
Anode vane
Va
Cathode
Induced RF
current
Slit
Cylindricalcavity
resonator TEoII
Figure 10·113 Schematic diagram of
an inverted coaxial magnetron.
(Courtesy of Varian Associates, Inc.)
Sec. 10.1 Magnetron Oscillators 445
(10157)
Mathematically, the motion equations of the electrons in an inverted coaxial
magnetron can be written from Eqs. (125a, b, c) as
d
2
r _ r(d
cfJ
)2 = '!E
r
_ .!rB
z
dcfJ (10155)
dt
2
dt m m dt
! ~ (r
2
d
cfJ
) = .!B
z
dcfJ (10156)
rdt dt m dt
where!!.... = I. 759 X 10" C/kg is the chargetomass ratio of electron
m
B
o
= B
z
is assumed in the positive z direction
Rearrangement of Eq. (10156) results in the following form
~ (r
2
d
cfJ
) = .! Bzr dr = ! We ~ (r
2
)
dt dt m dt 2 dt
where We = !!....B
z
is the cyclotron angular frequency. Integration of Eq. (10157)
m
yields
at r = b, where b is the radius of the cathode cylinder,
stant =  ~ web 2. The angular velocity is expressed by
(10158)
and ~ = 0 con
dt '
(10159)
Since the magnetic field does no work on the electrons, the kinetic energy of the
electron is given by
!m"V
2
= eV
However, the electron velocity has rand cfJ components such as
Oll'2 _ 2e V _ Ojr2 Ojr2 _ (dr)2 (dcfJ)2
f    f r + f 4>   + r
m dt dt
(10160)
(10161)
at r = a, where a is the radius from the center of the cylinder to the edge of the an
ode, V = V
o
, and dr/dt = O.
When the electrons just graze the anode, Eqs. (10160) and (10161) become
(10162)
(10163)
446 Microwave CrossedField Tubes (M Type) Chap. 10
Substitution of Eq. (10162) into Eq. (10163) results in
(10164)
The electron will acquire a tangential as well as a radial velocity. Whether the elec
tron will just graze the anode and return back toward the cathode depends on the rel
ative magnitudes of the anode voltage V
o
and the magnetic flux density B
o
. The cut
off condition can be obtained from Eq. (10164) as
(10165)
This means that if V
o
< V
Oc
for a given B
o
, the electrons will not reach the anode.
Equation (10165) is often called the Hull cutoff voltage equation. Similarly, the
magnetic cutoff condition is expressed by
(10166)
This means that if B
o
> B
Oc
for a given V
o
, the electrons will not reach the anode.
Equation (10166) is called the Hull cutoff magnetic equation.
The advantage of an inverted coaxial magnetron design is that the cathode cur
rent density can be reduced to onetenth of that used in cathodecentered mag
netrons. Thus the millimeter magnetron is a practical and longlife device. The out
put waveguide can be in the circular electric mode that has extremely low
transmission loss. Figure 10114 compares the inverted coaxial magnetron with a
conventional magnetron designed for the same frequency. It should be noted that the
cathode sizes are quite different.
Anode
Conventional rising
sun magnetron
Cathode
Inverted coaxial
magnetron
Figure 10114 Comparison of a con
ventional magnetron with an inverted
coaxial magnetron. (Courtesy of Varian
Associates, Inc.)
Sec. 10.1 Magnetron Oscillators
447
Example 1015: Inverted Coaxial Magnetron
An inverted coaxial magnetron has the following parameters:
Anode voltage:
Cathode current:
Anode radius:
Cathode radius:
Magnetic flux density:
Determine:
Va = 10 kV
1
0
= 2 A
a = 3 cm
b = 4 cm
B
o
= 0.01 Wb/m
2
a. The cutoff voltage for a fixed B
o
b. The cutoff magnetic flux density for a fixed Va
Solution
a. The cutoff voltage is
I
Vo< =  X 1.759 X 1011 X (0.01)2 X (3 X 10
2
)2
8
(
42)2
X I  3
2
= 1.20 kV
b. The c