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512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash GLS27SF512 / GLS27SF010
512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
GLS27SF512 / 010 / 0205.0V-Read 512Kb / 1Mb / 2Mb (x8) MTP flash memories
Data Sheet
FEATURES:
• Organized as 64K x8 / 128K x8 / 256K x8
• Fast Byte-Program Operation
• 4.5-5.5V Read Operation
– Byte-Program Time: 20 µs (typical)
– Chip Program Time:
• Superior Reliability
1.4
seconds (typical) for GLS27SF512
– Endurance: At least 1000 Cycles
2.8
seconds (typical) for GLS27SF010
– Greater than 100 years Data Retention
5.6
seconds (typical) for GLS27SF020
• Low Power Consumption
• Electrical Erase Using Programmer
– Active Current: 20 mA (typical)
– Does not require UV source
– Standby Current: 10 µA (typical)
– Chip-Erase Time: 100 ms (typical)
• Fast Read Access Time
• TTL I/O Compatibility
– 70 ns
• JEDEC Standard Byte-wide EPROM
Pinouts
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 32-pin PDIP for GLS27SF010/020
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The GLS27SF512/010/020 are a 64K x8 / 128K x8 / 256K
x8 CMOS, Many-Time Programmable (MTP) low cost
flash, manufactured with high performance SuperFlash
technology. The split-gate cell design and thick oxide tun-
neling injector attain better reliability and manufacturability
compared with alternate approaches. These MTP devices
can be electrically erased and programmed at least 1000
times using an external programmer with a 12V power sup-
ply. They have to be erased prior to programming. These
devices conform to JEDEC standard pinouts for byte-wide
memories.
To meet surface mount and conventional
through hole
requirements, the GLS27SF512 are offered in 32-lead
PLCC, 32-lead TSOP, and 28-pin PDIP packages. The
GLS27SF010/020 are offered in 32-pin PDIP, 32-lead
PLCC, and 32-lead TSOP packages. See
and 5 for pin assignments.
Figures 3, 4,
Device Operation
The GLS27SF512/010/020 are a low cost
flash solution
that can be used to replace existing UV-EPROM, OTP,
and mask ROM sockets. These devices are functionally
Featuring high-performance Byte-Program, the
GLS27SF512/010/020 provide a Byte-Program time of 20
µs. Designed, manufactured, and tested for a wide spec-
trum of applications, these devices are offered with an
endurance of at least 1000 cycles. Data retention is rated at
greater than 100 years.
(read and program) and pin compatible
with industry
standard EPROM products. In addition to EPROM func-
tionality, these devices also support electrical Erase
operation via an external programmer.
They do not
require a UV source to erase, and therefore the pack-
ages do not have a window.
The GLS27SF512/010/020 are suited for applications that
require infrequent writes and low power nonvolatile stor-
age. These devices will improve flexibility, efficiency, and
performance while matching the low cost in nonvolatile
applications that currently use UV-EPROMs, OTPs, and
mask ROMs.
Read
The Read operation of the GLS27SF512/010/020 is con-
trolled by CE# and OE#. Both CE# and OE# have to be
low for the system to obtain data from the
outputs. Once
the address is stable, the address access time is equal to
the delay from CE# to output (T CE ). Data is available at the
output after a delay of T OE from the falling
edge of OE#,
assuming that CE# pin has been low and the addresses
www.greenliant.com
©2010 Greenliant Systems, Ltd.
S71152-13-000
05/10
512 Kbit / 1 Mbit / 2 Mbit Ma ny-Time Programmable Flash GLS27SF512 / GLS27SF010
512 Kbit / 1 Mbit / 2 Mbit Ma ny-Time Programmable Flash GLS27SF512 / GLS27SF010
512 Kbit / 1 Mbit / 2 Mbit Ma ny-Time Programmable Flash GLS27SF512 / GLS27SF010

512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020

Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Product Identification Mode Data Sheet have been stable for

Product Identification Mode

Data Sheet

have been stable for at least T CE -T OE. When the CE# pin is high, the chip is deselected and a typical standby current of 10 µA is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high.

The Product Identification mode identifies the devices as the GLS27SF512, GLS27SF010 and GLS27SF020 and manufacturer as Greenliant. This mode may be accessed by the hardware method. To activate this mode for GLS27SF010/020, the programming equipment must force V H (11.4-12V) on address A 9 with V PP pin at V DD (4.5-5.5V) or V SS . To activate this mode for GLS27SF512, the pro- gramming equipment must force V H (11.4-12V) on address A 9 with OE#/V PP pin at V IL . Two identifier bytes may then be sequenced from the device outputs by toggling address line A 0 . For details, see Tables 3 and 4 for hardware opera- tion.

TABLE

1: Product Identification

Byte-Program Operation

The GLS27SF512/010/020 are programmed by using an external programmer. The programming mode for GLS27SF010/020 is activated by asserting 11.4-12V on V PP pin, V DD = 4.5-5.5V, V IL on CE# pin, and V IH on OE# pin. The programming mode for GLS27SF512 is activated by asserting 11.4-12V on OE#/V PP pin, V DD = 4.5-5.5V, and V IL on CE# pin. These devices are programmed byte- by-byte with the desired data at the desired address using

(CE# pin low for GLS27SF512 and PGM#

pin low for GLS27SF010/020) of 20 µs. Using the MTP

programming

algorithm, the Byte-Programming process

a single pulse

 

Address

Data

Manufacturer’s ID

0000H

BFH

Device ID

   

GLS27SF512

0001H

A4H

GLS27SF010

0001H

A5H

GLS27SF020

0001H

A6H

T1.2 1152

continues byte-by-byte until the entire chip has been pro- grammed.

Chip-Erase Operation

The only way to change a data from a “0” to “1” is by electri- cal erase that changes every bit in the device to “1”. Unlike traditional EPROMs, which use UV light to do the Chip- Erase, the GLS27SF512/010/020 uses an electrical Chip- Erase operation. This saves a significant amount of time (about 30 minutes for each Erase operation). The entire chip can be erased in a single pulse of 100 ms (CE# pin low for GLS27SF512 and PGM# pin for GLS27SF010/ 020). In order to activate the Erase mode for GLS27SF010/020, the 11.4-12V is applied to V PP and A 9 pins, V DD = 4.5-5.5V, V IL on CE# pin, and V IH on OE# pin.

In

order to activate Erase mode for GLS27SF512, the 11.4-

12V is applied to OE#/V PP and A 9 pins, V DD = 4.5-5.5V, and V IL on CE# pin. All other address and data pins are

The falling edge of CE# (PGM# for

GLS27SF010/020) will start the Chip-Erase operation.

has been erased, all bytes must be verified

“don’t care”.

Once the chip

for FFH. Refer to Figures 13 and 14 for the flowcharts.

the chip for FFH. Refer to Figures 13 and 14 for the flowcharts. ©2010 Greenliant Systems,

©2010 Greenliant Systems, Ltd.

2

S71152-13-000

05/10

512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
SuperFlash
X-Decoder
Memory
A
15 - A 0
Address Buffer
Y-Decoder
CE#
OE#/V PP
Control Logic
I/O Buffers
A
9
DQ 7 - DQ 0
1152 B2.1
FIGURE
1: Functional Block Diagram - GLS27SF512
SuperFlash
X-Decoder
Memory
A MS - A 0
Address Buffer
Y-Decoder
CE#
OE#
I/O Buffers
Control Logic
A 9
V PP
DQ 7 - DQ 0
PGM#
A MS = A 17 for GLS27SF020, A 16 for GLS27SF010
1152 B3.2
FIGURE
2: Functional Block Diagram - GLS27SF010/020
©2010 Greenliant Systems, Ltd.
3
S71152-13-000
05/10
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
GLS27SF020
GLS27SF010
GLS27SF512
GLS27SF010/020
GLS27SF512
GLS27SF512
GLS27SF010/020
4
3
2
1
32
31
30
A7
A6
5
29
A8
A14
A6
A5
6
28
A9
A13
A5
A4
7
27
A11
A8
A4
A3
8
26
NC
A9
32-lead PLCC
A3
A2
9
25
OE#/V PP
A11
Top View
A2
A1
10
24
A10
OE#
A1
A0
11
23
CE#
A10
A0
NC
12
22
DQ7
CE#
DQ0
DQ0
13
21
DQ6
DQ7
14
15
16
17 18
19
20
GLS27SF512
GLS27SF010/020
1152 32-plcc P1.5
FIGURE
3: Pin Assignments for 32-lead PLCC
GLS27SF020
GLS27SF010
GLS27SF512
GLS27SF512
GLS27SF010
GLS27SF020
A11
1
32
OE#/V PP
OE#
OE#
A9
2
31
A10
A8
3
30
CE#
A13
4
29
DQ7
A14
5
28
DQ6
A17
NC
NC
6
Standard Pinout
27
DQ5
PGM#
PGM#
NC
7
26
DQ4
8
Top View
25
DQ3
V DD
NC
9
24
V PP
V PP
V SS
Die Up
A16
A16
NC
10
23
DQ2
A15
11
22
DQ1
A12
12
21
DQ0
A7
13
20
A0
A6
14
19
A1
A5
15
18
A2
A4
16
17
A3
1152 32-tsop P2.3
FIGURE
4: Pin Assignments for 32-lead TSOP (8mm x 14mm)
©2010 Greenliant Systems, Ltd.
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S71152-13-000
05/10
DQ1
DQ1
A7
A12
A12
DQ2
DQ2
A12
A15
A15
V SS
V SS
A15
A16
A16
DQ3
NC
NC
V
PP
V
PP
DQ4
DQ3
V DD
V
DD
V
DD
DQ5
DQ4
A14
PGM#
#PGM
DQ6
DQ5
A13
NC
A17
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
GLS27SF020
GLS27SF010
GLS27SF010
GLS27SF020
GLS27SF512
GLS27SF512
V
PP
V
PP
1 V DD
32
V DD
A16
A16
2 PGM#
31
PGM#
A15
1 28
V DD
A15
A15
3 NC
30
A17
A12
2 27
A14
A12
A12
4 A14
29
A14
A7
3 26
A13
A7
A7
5 A13
28
A13
A6
4 25
A8
6 32-pin
A6
A6
27
A8
A8
A5
5 24
A9
6 28-pin
A5
A5
7 PDIP
26
A9
A9
A4
23
A11
A4
A4
25
A11
A11
A3
7 PDIP
22
8 Top View
OE#/V PP
A3
A3
9 OE#
24
OE#
A2
21
A10
8 Top View
A2
A2
10 A10
23
A10
A1
9 20
CE#
A1
A1
11 CE#
22
CE#
A0
10 19
DQ7
A0
A0
12 DQ7
21
DQ7
DQ0
11 18
DQ6
DQ0
DQ0
13 DQ6
20
DQ6
DQ1
12 17
DQ5
DQ1
DQ1
14 DQ5
19
DQ5
DQ2
13 16
DQ4
DQ2
DQ2
15 DQ4
18
DQ4
V SS
14 15
DQ3
V
SS
V
SS
16 DQ3
17
DQ3
1152 28-pdip P3.2
1152 32-pdip P4.2
FIGURE
5: Pin Assignments for 28-pin and 32-pin PDIP
TABLE
2: Pin Description
Symbol
Pin Name
Functions
A
Address Inputs
To provide memory addresses
MS 1 -A 0
DQ 7 -DQ 0
Data Input/output
To output data during Read cycles and receive input data during Program cycles
The outputs are in tri-state when OE# or CE# is high.
CE#
Chip Enable
To activate the device when CE# is low
OE#
Output Enable
For GLS27SF010/020, to gate the data output buffers during Read operation
OE#/V PP
Output Enable/V PP
For GLS27SF512, to gate the data output buffers during Read operation and high voltage
pin during Chip-Erase and programming operation
V
For GLS27SF010/020, high voltage pin during Chip-Erase and programming operation
PP
Power Supply for
Program or Erase
11.4-12V
V
Power Supply
To provide 5.0V supply (4.5-5.5V)
DD
V
Ground
SS
NC
No Connection
Unconnected pins.
T2.4 1152
1. A MS = Most significant address
A MS = A 15 for GLS27SF512, A 16 for GLS27SF010, and A 17 for GLS27SF020
©2010 Greenliant Systems, Ltd.
5
S71152-13-000
05/10
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
TABLE
3: Operation Modes Selection for GLS27SF512
Mode
CE#
OE#/V PP
A
DQ
Address
9
Read
V
V
A
D
A
IL
IL
IN
OUT
IN
1
Output Disable
V
V
X
High Z
X
IL
IH
Program
V
V
A
D
A
IL
PPH
IN
IN
IN
Standby
V
X
X
High Z
X
IH
Chip-Erase
V
V
V
High Z
X
IL
PPH
H
Program/Erase Inhibit
V
V
X
High Z
X
IH
PPH
Product Identification
V
V
V
IL
IL
H
Manufacturer’s ID (BFH)
Device ID (A4H)
A 15 -A 1 =V IL , A 0 =V IL
A 15 -A 1 =V IL , A 0 =V IH
T3.2 1152
1.
X can be V IL or V IH, but no other value.
Note: V PPH = 11.4-12V, V H = 11.4-12V
TABLE
4: Operation Modes Selection for GLS27SF010/020
Mode
CE#
OE#
PGM#
A
V
DQ
Address
9
PP
1
Read
V
V
X
A
D
A
IL
IL
IN
V DD or V SS
OUT
IN
Output Disable
V
V
X
XV DD or V SS
High Z
A
IL
IH
IN
Program
V
V
V
A
V
D
A
IL
IH
IL
IN
PPH
IN
IN
Standby
V
X
X
XV DD or V SS
High Z
X
IH
Chip-Erase
V
V
V
V
V
High Z
X
IL
IH
IL
H
PPH
Program/Erase Inhibit
V
X
X
XV
High Z
X
IH
PPH
Product Identification
V
V
X
V
IL
IL
H
V DD or V SS
Manufacturer’s ID (BFH)
Device ID 2
A MS 3 - A 1 =V IL , A 0 =V IL
A MS 3 - A 1 =V IL , A 0 =V IH
T4.2 1152
1. X can be V IL or V IH, but no other value.
2. Device ID
= A5H for GLS27SF010 and A6H for GLS27SF020
3. A MS = Most significant address
for GLS27SF010 and A 17 for GLS27SF020
A MS = A 16
Note: V PPH = 11.4-12V, V H = 11.4-12V
©2010 Greenliant Systems, Ltd.
6
S71152-13-000
05/10
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias
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Storage Temperature
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D. C. Voltage on Any Pin to Ground Potential
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.-0.5V to V DD +0.5V
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-55°C to +125°C
-65°C to +150°C
Transient Voltage (<20 ns) on Any Pin to Ground Potential
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Voltage on A 9 and V PP Pin to Ground Potential
.
Package Power Dissipation Capability (T A = 25°C)
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.-2.0V to V DD +2.0V
-0.5V to 14.0V
.
Through Hole Lead Soldering Temperature (10 Seconds)
Surface Mount Solder Reflow Temperature 1
Output Short Circuit Current 2
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1.0W
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300°C
260°C for 10 seconds
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100 mA
1. Excluding certain with-Pb 32-PLCC units, all packages are 260°C capable in both non-Pb and with-Pb solder versions.
Certain with-Pb 32-PLCC package types are capable of 240°C for 10 seconds; please consult the factory for the latest information.
2. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE
AC CONDITIONS OF TEST
Range
Ambient Temp
V
V
Input Rise/Fall Time
10 ns
DD
PP
Commercial
0°C to +70°C
4.5-5.5V
11.4-12V
Output Load
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C L =
30
pF for 70 ns
See Figures 11 and 12
TABLE
5: Read Mode DC Operating Characteristics for GLS27SF512/010/020
V DD = 4.5-5.5V, V PP =V DD or V SS (T A = 0°C to +70°C (Commercial))
Limits
Symbol
Parameter
Min
Max
Units
Test Conditions
I
V DD Read Current
DD
Address input=V ILT /V IHT at f=1/T RC Min
V DD =V DD Max
30
mA
CE#=OE#=V IL , all I/Os open
I
V PP Read Current
PPR
Address input=V ILT /V IHT at f=1/T RC Min
V DD =V DD Max, V PP =V DD
100
µA
CE#=OE#=V IL , all I/Os open
I
3
mA
CE#=V IH , V DD =V DD Max
SB1
Standby V DD Current
(TTL input)
I
100
µA
CE#=V
DD -0.3
SB2
Standby V DD Current
(CMOS input)
V DD =V DD Max
I
Input Leakage Current
1
µA
V IN =GND to V DD , V DD =V DD Max
LI
I
Output Leakage Current
10
µA
V OUT =GND to V DD , V DD =V DD Max
LO
V
Input Low Voltage
0.8
V
V DD =V DD Min
IL
V
Input High Voltage
2.0
V
DD +0.5
V
V DD =V DD Max
IH
V
Output Low Voltage
0.2
V
I OL =2.1 mA, V DD =V DD Min
OL
V
Output High Voltage
2.4
V
I OH =-400 µA, V DD =V DD Min
OH
I
Supervoltage Current for A 9
200
µA
CE#=OE#=V IL , A 9 =V H Max
H
T5.6 1152
©2010 Greenliant Systems, Ltd.
7
S71152-13-000
05/10
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
TABLE
6: Program/Erase DC Operating Characteristics for GLS27SF512
V DD =4.5-5.5V, V PP =V PPH (T A =25°C±5°C)
Limits
Symbol
Parameter
Min
Max
Units
Test Conditions
V
Erase or Program Current
30
mA
CE#=V IL, OE#/V PP =11.4-12V, V DD =V DD Max
I DD
DD
V
Erase or Program Current
3
mA
CE#=V IL, OE#/V PP =11.4-12V, V DD =V DD Max
I PP
PP
I
Input Leakage Current
1
µA
V IN =GND to V DD , V DD =V DD Max
LI
I
Output Leakage Current
10
µA
V OUT =GND to V DD , V DD =V DD Max
LO
V
Supervoltage for A 9
11.4
12
V
CE#=OE#/V
=V
H
PP
IL,
I
Supervoltage Current for A 9
200
µA
CE#=OE#/V PP =V IL, A 9 =V H Max
H
V
High Voltage for OE#/V PP Pin
11.4
12
V
PPH
T6.5 1152
TABLE
7: Program/Erase DC Operating Characteristics for GLS27SF010/020
V DD =4.5-5.5V, V PP =V PPH (T A =25°C±5°C)
Limits
Symbol
Parameter
Min
Max
Units
Test Conditions
I
V
Erase or Program Current
30
mA
DD
DD
CE#=PGM#=V IL, OE#=V IH , V PP =11.4-12V,
V DD =V DD Max
I
V
Erase or Program Current
3
mA
PP
PP
CE#=PGM#=V IL, OE#=V IH , V PP =11.4-12V,
V DD =V DD Max
I
Input Leakage Current
1
µA
V IN =GND to V DD , V DD =V DD Max
LI
I
Output Leakage Current
10
µA
V OUT =GND to V DD , V DD =V DD Max
LO
V
Supervoltage for A 9
11.4
12
V
CE#=OE#=V
H
IL,
I
Supervoltage Current for A 9
200
µA
CE#=OE#=V IL, A 9 =V H Max
H
V
High
Voltage for V PP Pin
11.4
12
V
PPH
T7.5 1152
TABLE
8: Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
T
Power-up to Read Operation
100
µs
PU-READ 1
T
Power-up to Write Operation
100
µs
PU-WRITE 1
T8.1 1152
1.
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE
9: Capacitance (T A = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
C
I/O Pin Capacitance
Input Capacitance
V I/O = 0V
V IN = 0V
12 pF
I/O 1
C
6 pF
IN 1
T9.0 1152
1.
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: Reliability Characteristics
Symbol
Parameter
Minimum Specification
Units
Test Method
N
Endurance
1000
Cycles
END 1
T
Data Retention
100
Years
JEDEC Standard A117
JEDEC Standard A103
DR 1
T10.3 1152
1.
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2010 Greenliant Systems, Ltd.
8
S71152-13-000
05/10
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
AC CHARACTERISTICS
TABLE 11: Read Cycle Timing Parameters V DD = 4.5-5.5V (T A = 0°C to +70°C (Commercial))
Symbol
Parameter
Min
Max
Units
T
Read Cycle Time
70
ns
RC
T
Chip Enable Access Time
70
ns
CE
T
Address Access Time
70
ns
AA
T
Output Enable Access Time
35
ns
OE
T
CE# Low to Active Output
0
ns
CLZ 1
1
T
OE# Low to Active Output
0
ns
OLZ
1
T
CE# High to High-Z Output
25
ns
CHZ
1
T
OE# High to High-Z Output
25
ns
OHZ
T
Output Hold from Address Change
0
ns
OH 1
T11.3 1152
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: Program/Erase Cycle Timing Parameters for GLS27SF512
Symbol
Parameter
Min
Max
Units
T
Address Setup Time
1
µs
AS
T
Address Hold Time
1
µs
AH
T
OE#/V PP Pulse Rise Time
50
ns
PRT
T
OE#/V PP Setup Time
1
µs
VPS
T
OE#/V PP Hold Time
1
µs
VPH
T
CE# Program Pulse Width
20
30
µs
PW
T
CE# Erase Pulse Width
100
500
ms
EW
T
Data Setup Time
1
µs
DS
T
Data Hold Time
1
µs
DH
T
OE#/V PP and A 9 Recovery Time
1
µs
VR
T
A 9 Rise Time to 12V during Erase
50
ns
ART
T
A 9 Setup Time during Erase
1
µs
A9S
T
A 9 Hold Time during Erase
1
µs
A9H
T12.0 1152
©2010 Greenliant Systems, Ltd.
9
S71152-13-000
05/10
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
TABLE 13: Program/Erase Cycle Timing Parameters for GLS27SF010/020
Symbol
Parameter
Min
Max
Units
T
CE# Setup Time
1
µs
CES
T
CE# Hold Time
1
µs
CEH
T
Address Setup Time
1
µs
AS
T
Address Hold Time
1
µs
AH
T
V PP Pulse Rise Time
50
ns
PRT
T
V PP Setup Time
1
µs
VPS
T
V PP Hold Time
1
µs
VPH
T
PGM# Program Pulse Width
20
30
µs
PW
T
PGM# Erase Pulse Width
100
500
ms
EW
T
Data Setup Time
1
µs
DS
T
Data Hold Time
1
µs
DH
T
A
Recovery Time for Erase
1
µs
VR
9
T
A
Rise Time to 12V during Erase
50
ns
ART
9
T
A
Setup Time during Erase
1
µs
A9S
9
T
A
Hold Time during Erase
1
µs
A9H
9
T13.0 1152
©2010 Greenliant Systems, Ltd.
10
S71152-13-000
05/10
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
T
RC
T AA
ADDRESS
T CE
CE#
T
OE
OE#
T OHZ
T OLZ
T OH
T CHZ
HIGH-Z
DATA VALID
DATA VALID
DQ 7-0
T CLZ
1152 F03.0
FIGURE
6: Read Cycle Timing Diagram for GLS27SF512/010/020
ADDRESS
(EXCEPT A 9 )
CE#
T EW
DQ 7-0
T
T
T
VPH
VR
VPS
V
PPH
OE#/V PP
V
DD
V
SS
T PRT
T
T
VR
V
A9S
PPH
V
A 9
IH
V
IL
T
T ART
A9H
1152 F04b.1
FIGURE
7: Chip-Erase Timing Diagram for GLS27SF512
©2010 Greenliant Systems, Ltd.
11
S71152-13-000
05/10
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
ADDRESS
(EXCEPT A 9 )
T
CEH
CE#
OE#
V
IH
DQ 7-0
T
VPS
T
VPH
V
PPH
V
V
PP
DD
V
SS
T
PRT
T
T VR
A9S
V
PPH
A
V
9
IH
V
IL
T
T
ART
T EW
A9H
PGM#
T CES
1152 F04c.1
FIGURE
8: Chip-Erase Timing Diagram for GLS27SF010/020
ADDRESS
ADDRESS VALID
T AS
T AH
T PW
CE#
T DS
T DH
HIGH-Z
DATA VALID
DQ 7-0
T VR
T VPS
V
PPH
OE#/V PP
V
DD
V
SS
T PRT
T VPH
1152 F05b.2
FIGURE
9: Byte-Program Timing Diagram for GLS27SF512
©2010 Greenliant Systems, Ltd.
12
S71152-13-000
05/10
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
ADDRESS
ADDRESS VALID
T
AH
T AS
CE#
T CEH
OE#
V
IH
T DS
T DH
HIGH-Z
DATA VALID
DQ 7-0
T VPS
V PPH
V PP
V DD
V SS
T PW
T VPH
T PRT
PGM#
1152 F05c.1
T CES
FIGURE 10: Byte-Program Timing Diagram for GLS27SF010/020
©2010 Greenliant Systems, Ltd.
13
S71152-13-000
05/10
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
V IHT
V HT
V HT
INPUT
REFERENCE POINTS
OUTPUT
V LT
V LT
V ILT
1152 F06.0
AC test inputs are driven at V IHT (2.4 V) for a logic “1” and V ILT (0.4 V) for a logic “0”. Measurement reference points for
inputs and outputs are V HT (2.0 V) and V LT (0.8 V). Input rise and fall times (10%  90%) are <10 ns.
Note: V HT - V HIGH Test
V LT - V LOW Test
V IHT - V INPUT HIGH Test
V ILT - V INPUT LOW Test
FIGURE 11: AC Input/Output Reference Waveforms
V DD
TO DUT
R L HIGH
1152 F07.1
FIGURE 12: A Test Load Example
©2010 Greenliant Systems, Ltd.
14
S71152-13-000
05/10

512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020

Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Start A 9 = V H OE#/V
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Start A 9 = V H OE#/V
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Start A 9 = V H OE#/V
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Start A 9 = V H OE#/V
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Start A 9 = V H OE#/V

Data Sheet

Start A 9 = V H
Start
A
9 = V H
/ GLS27SF010 / GLS27SF020 Data Sheet Start A 9 = V H OE#/V P P =

OE#/V PP = V PPH

Data Sheet Start A 9 = V H OE#/V P P = V P P H

Erase 100ms pulse (CE# = V IL )

P P = V P P H Erase 100ms pulse (CE# = V I L )

OE#/V PP = V DD or V SS A 9 = V IL or V IH

= V D D or V S S A 9 = V I L or V

Wait for OE#/V PP and

A 9 Recovery Time

or V I H Wait for OE#/V P P and A 9 Recovery Time Read Device
Read Device (CE# = OE# = V IL ) No Compare All bytes to FFH
Read Device
(CE# = OE# = V IL )
No
Compare All
bytes to FFH
Yes

1152 F08b.2

FIGURE 13: Chip-Erase Algorithm for GLS27SF512

FFH Yes 1152 F08b.2 FIGURE 13: Chip-Erase Algorithm for GLS27SF512 ©2010 Greenliant Systems, Ltd. 15 S71152-13-000

©2010 Greenliant Systems, Ltd.

15

S71152-13-000

05/10

512 Kbit / 1 Mbit / 2 Mbit Ma ny-Time Programmable Flash GLS27SF512 / GLS27SF010
512 Kbit / 1 Mbit / 2 Mbit Ma ny-Time Programmable Flash GLS27SF512 / GLS27SF010
512 Kbit / 1 Mbit / 2 Mbit Ma ny-Time Programmable Flash GLS27SF512 / GLS27SF010

512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020

Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Start A 9 = V H ,

Data Sheet

Start A 9 = V H , V PP = V PPH CE# = V
Start
A 9 = V H , V PP = V PPH
CE# = V IL , OE# = V IH
Erase 100ms pulse
(PGM# = V IL )
PGM# = V IH
, OE# = V IH Erase 100ms pulse (PGM# = V IL ) PGM# = V

A 9 = V IL or V IH

(PGM# = V IL ) PGM# = V IH A 9 = V I L or

Wait A 9 Recovery Time

A 9 = V I L or V I H Wait A 9 Recovery Time Read
Read Device No Compare all bytes to FFH Yes
Read Device
No
Compare all
bytes to FFH
Yes

1152 F08c.1

FIGURE 14: Chip-Erase Algorithm for GLS27SF010/020

Yes 1152 F08c.1 FIGURE 14: Chip-Erase Algorithm for GLS27SF010/020 ©2010 Greenliant Systems, Ltd. 16 S71152-13-000 05/10

©2010 Greenliant Systems, Ltd.

16

S71152-13-000

05/10

512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020

Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Start Erase* OE#/V P P = V
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Start Erase* OE#/V P P = V
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Start Erase* OE#/V P P = V
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Start Erase* OE#/V P P = V
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Start Erase* OE#/V P P = V

Data Sheet

StartFlash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Erase* OE#/V P P = V P P

Erase*Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Start OE#/V P P = V P P

OE#/V P P = V P P H

OE#/V PP = V PPH

OE#/V P P = V P P H
OE#/V P P = V P P H
Address = First Location

Address = First Location

Address = First Location
Address = First Location
Program 20µs pulse (CE# = V IL ) Increment Address Last Address? No Yes
Program 20µs pulse
(CE# = V IL )
Increment Address
Last Address?
No
Yes

OE#/V PP = V DD or V SS

OE#/V P P = V D D or V S S

Wait for OE#/V PP RecoveryTime

= V D D or V S S Wait for OE#/V P P RecoveryTime Read Device

Read Device (CE# = OE# = V IL )

Compare all bytes to original data
Compare all bytes
to original data

Yes

= OE# = V I L ) Compare all bytes to original data Yes No *
= OE# = V I L ) Compare all bytes to original data Yes No *

No

= V I L ) Compare all bytes to original data Yes No * See Figure

* See Figure 13

) Compare all bytes to original data Yes No * See Figure 13 1152 F09b.2 FIGURE

1152 F09b.2

FIGURE 15: Byte-Program Algorithm for GLS27SF512

13 1152 F09b.2 FIGURE 15: Byte-Program Algorithm for GLS27SF512 ©2010 Greenliant Systems, Ltd. 17 S71152-13-000 05/10

©2010 Greenliant Systems, Ltd.

17

S71152-13-000

05/10

512 Kbit / 1 Mbit / 2 Mbit Ma ny-Time Programmable Flash GLS27SF512 / GLS27SF010
512 Kbit / 1 Mbit / 2 Mbit Ma ny-Time Programmable Flash GLS27SF512 / GLS27SF010

512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash 512 Kbit / 1 Mbit / 2 Mbit Ma GLS27SF512 / GLS27SF010 / GLS27SF020 GLS27SF512 / GLS27SF010 / GLS27SF020

Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Start Erase* V PP = V PPH

Data Sheet

Start Erase*
Start
Erase*
/ GLS27SF010 / GLS27SF020 Data Sheet Start Erase* V PP = V PPH Address = First
V PP = V PPH

V PP = V PPH

V PP = V PPH
V PP = V PPH
Address = First Location

Address = First Location

Address = First Location
Address = First Location
CE# = V I L , OE# = V I H

CE# = V IL , OE# = V IH

CE# = V I L , OE# = V I H
CE# = V I L , OE# = V I H
Program 20µs pulse

Program 20µs pulse

(PGM# = V IL )

(PGM# = V I L )
Program 20µs pulse (PGM# = V I L )
Program 20µs pulse (PGM# = V I L )
Last Address? No Yes
Last Address?
No
Yes
Read Device

Read Device

Read Device
Read Device
Compare all bytes to original data
Compare all bytes
to original data

Yes

No Yes Read Device Compare all bytes to original data Yes No 1152 F09c.1 Increment Address
No Yes Read Device Compare all bytes to original data Yes No 1152 F09c.1 Increment Address

No

Yes Read Device Compare all bytes to original data Yes No 1152 F09c.1 Increment Address *
Yes Read Device Compare all bytes to original data Yes No 1152 F09c.1 Increment Address *

1152 F09c.1

Increment Address

* See Figure 14

FIGURE 16: Byte-Program Algorithm for GLS27SF010/020

See Figure 14 FIGURE 16: Byte-Program Algorithm for GLS27SF010/020 ©2010 Greenliant Systems, Ltd. 18 S71152-13-000 05/10

©2010 Greenliant Systems, Ltd.

18

S71152-13-000

05/10

512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020

Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 PRODUCT ORDERING INFORMATION GLS 27 SF 020 -
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 PRODUCT ORDERING INFORMATION GLS 27 SF 020 -
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 PRODUCT ORDERING INFORMATION GLS 27 SF 020 -
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 PRODUCT ORDERING INFORMATION GLS 27 SF 020 -
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 PRODUCT ORDERING INFORMATION GLS 27 SF 020 -

PRODUCT ORDERING INFORMATION

GLS

27

SF

020

-

70

-

3C

-

NH

E

XX

XX

XXXX

- XXX

-

XX

-

XXX

X

XX X X XXXX - XXX - XX - XXX X Environmental Attribute E 1 =

Environmental Attribute E 1 = non-Pb

Package Modifier

H = 32 pins or leads

Package Type

= PLCC

= PDIP

Temperature Range

C

Data Sheet

N

P

W = TSOP (type 1, die up, 8mm x 14mm)

= Commercial = 0°C to +70°C

Minimum Endurance 3 = 1,000 cycles

Read Access Speed

70 = 70 ns

Device Density - x8 Organization

020

= 2 Mbit

010

= 1 Mbit

512

= 512 Kbit

Voltage Range

S = 4.5-5.5V

Product Series

27

= Many-Time Programmable Flash OTP/EPROM replacement with EPROM pinout

1. Environmental suffix “E” denotes non-Pb solder. Greenliant non-Pb solder devices are “RoHS Compli- ant”.

Valid combinations for GLS27SF512

GLS27SF512-70-3C-NHE GLS27SF512-70-3C-WHE

Valid combinations for GLS27SF010

GLS27SF010-70-3C-NHE GLS27SF010-70-3C-WHE GLS27SF010-70-3C-PHE

Valid combinations for GLS27SF020

GLS27SF020-70-3C-NHE GLS27SF020-70-3C-WHE GLS27SF020-70-3C-PHE

Note: Valid combinations are those products in mass production or will be in mass production. Consult your Greenliant sales representative to confirm availability of valid combinations and to determine availability of new combinations.

combinations and to determine availability of new combinations. ©2010 Greenliant Systems, Ltd. 19 S71152-13-000 05/10

©2010 Greenliant Systems, Ltd.

19

S71152-13-000

05/10

512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
PACKAGING DIAGRAMS
TOP VIEW
SIDE VIEW
BOTTOM VIEW
.495
.485
.112
Optional
.453
.106
Pin #1
.447
.048
Identifier
.020 R.
.029
.040
x 30˚
R.
.042
MAX.
.023
.030
2
1
32
.042
.021
.048
.013
.595
.553
.400
.032
.530
.585
.547
BSC
.026
.490
.050
BSC
.015 Min.
.095
.075
.050
BSC
.032
.140
.026
.125
Note:
1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in inches (max/min).
3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches.
32-plcc-NH-3
4. Coplanarity: 4 mils.
FIGURE 17: 32-lead Plastic Lead Chip Carrier (PLCC)
Greenliant Package Code: NH
©2010 Greenliant Systems, Ltd.
20
S71152-13-000
05/10

512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020

Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Pin # 1 Identifier 8.10 7.90 12.50
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Pin # 1 Identifier 8.10 7.90 12.50
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Pin # 1 Identifier 8.10 7.90 12.50
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Pin # 1 Identifier 8.10 7.90 12.50
Programmable Flash GLS27SF512 / GLS27SF010 / GLS27SF020 Data Sheet Pin # 1 Identifier 8.10 7.90 12.50

Data Sheet

Pin # 1 Identifier 8.10 7.90 12.50 12.30 1.20 max. 0.70 0.50 14.20 13.80
Pin # 1 Identifier
8.10
7.90
12.50
12.30
1.20
max.
0.70
0.50
14.20
13.80

1.05

0.95

0.50 BSC 0.27 0.17 0.15 0.05
0.50
BSC
0.27
0.17
0.15
0.05
DETAIL 0.70
DETAIL
0.70

Note:

0.50

1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (max/min).

3. Coplanarity: 0.1 mm 4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.

is 0.15 mm at the package ends, and 0.25 mm between leads. 1mm 0˚- 5˚ 32-tsop-WH-7

1mm

0˚- 5˚

32-tsop-WH-7

FIGURE 18: 32-lead Thin Small Outline Package (TSOP) 8mm x 14mm Greenliant Package Code: WH

Outline Package (TSOP) 8mm x 14mm Greenliant Package Code: WH ©2010 Greenliant Systems, Ltd. 21 S71152-13-000

©2010 Greenliant Systems, Ltd.

21

S71152-13-000

05/10

512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
32
C L
1
Pin #1 Identifier
.625
.600
.550
.530
1.655
.075
1.645
.065
4 PLCS.
Base
.200
Plane
.170
Seating
Plane
.050
.015
.012
15˚
.008
.150
.100 BSC
.120
.080
.022
.065
.600 BSC
.070
.016
.045
Note:
1.
Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent.
2.
All linear dimensions are in inches (max/min).
3.
Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches.
32-pdip-PH-3
FIGURE 19: 32-pin Plastic Dual In-line Pins (PDIP)
Greenliant Package Code: PH
©2010 Greenliant Systems, Ltd.
22
S71152-13-000
05/10
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash GLS27SF512 / GLS27SF010 /
512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
GLS27SF512 / GLS27SF010 / GLS27SF020
Data Sheet
TABLE 14: Revision History
Number
Description
Date
02
• 2002 Data Book
Feb 2002
03
• Document Control Release (SST Internal): No technical changes
Apr 2002
04
• Corrected I H Supervoltage Current for A 9 from 100 µA to 200 µA in Tables 5, 6, and 7
Jul 2002
05
• Corrected the Test Conditions for I DD and I PPR in Table 5 on page 7
Sep 2003
06
• Corrected the Max value for I PP from 1 mA to 3 mA (See Tables 6 and 7)
Nov 2003
• Added MPNs for non-PB packages (See page 19)
07
• 2004 Data Book
Nov 2003
• Corrected caption for Figure 7 from “Read Cycle” to “Chip-Erase”
08
• Removed 256 Kbit parts - refer to EOL Product Data Sheet S71152(02)
Apr 2004
09
• Removed all 90 ns parts - refer to EOL Product Data Sheet S71152(03)
Mar 2005
• Added RoHS compliance information on page 1 and in the “Product Ordering Infor-
mation” on page 19
• Added the solder reflow temperature to the “Absolute Maximum Stress Ratings” on
page 7.
10
• Removed obsolete Latch-up parameter from Table 10 on page 8
May 2005
11
• Corrected V PP voltage from 11.4-12.6V to 11.4-12V
Sep 2005
12
• Removed leaded parts. See S71152(04)
Sep 2008
• End-of-Life PG package and PG valid combination. See S71152(04)
13
• Transferred from SST to Greenliant
May 2010
© 2010 Greenliant Systems, Ltd. All rights reserved.
Greenliant, the Greenliant logo and NANDrive are trademarks of Greenliant Systems, Ltd.
All trademarks and registered trademarks are the property of their respective owners.
These specifications are subject to change without notice.
MTP is a trademark and SuperFlash is a registered trademark of Silicon Storage Technology, Inc., a wholly owned subsidiary of
Microchip Technology Inc.
©2010 Greenliant Systems, Ltd.
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