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Power Transistors

2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio Complementary to 2SB1299
0.70.1 10.00.2 5.50.2 2.70.2 4.20.2

Unit: mm
4.20.2

I Features
G G G

High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C)
Ratings 80 100 60 80 6 6 3 1 40 2 150 55 to +150 Unit V

7.50.2

16.70.3

3.10.1

4.0

14.00.5

I Absolute Maximum Ratings


Parameter Collector to base voltage Collector to 2SD1273 2SD1273A 2SD1273 Symbol VCBO VCEO VEBO ICP IC IB Ta=25C PC Tj Tstg

1.40.1

1.30.2

Solder Dip

0.80.1

0.5 +0.2 0.1

2.540.25 5.080.5

emitter voltage 2SD1273A Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Junction temperature Storage temperature

V V A A A W C C

1:Base 2:Collector 3:Emitter TO220 Full Pack Package(a)

I Electrical Characteristics
Parameter Collector cutoff current 2SD1273 2SD1273A

(TC=25C)
Symbol ICBO ICEO IEBO Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE = 40V, IB = 0 VCB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz 50 60 80 500 2500 1 V MHz min typ max 100 100 100 100 Unit A A A V

Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1273 2SD1273A

VCEO hFE* VCE(sat) fT

Forward current transfer ratio Collector to emitter saturation voltage Transition frequency
*h FE

Rank classification
Q P O hFE 500 to 1000 800 to 1500 1200 to 2500

Rank

Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.

Power Transistors
PC Ta
50 1.0 (1) TC=Ta (2) With a 100 100 2mm Al heat sink (3) With a 50 50 2mm Al heat sink (4) Without heat sink (PC=2W) IB=1.2mA 1.0mA TC=25C

2SD1273, 2SD1273A
IC VCE
5

IC VBE

Collector power dissipation PC (W)

Collector current IC (A)

0.7mA 0.6mA 0.6 0.5mA 0.4mA 0.4 0.3mA 0.2mA 0.2 0.1mA 0

Collector current IC (A)

40

(1)

0.8

TC=100C 3

30

25C 2 25C 1

20

10

(2) (3) (4)

0 0 20 40 60 80 100 120 140 160

0 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2

Ambient temperature Ta (C)

Collector to emitter voltage VCE (V)

Base to emitter voltage VBE (V)

VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=40 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100C 25C 25C 10000

hFE IC
10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03

fT IC
VCE=12V f=10MHz TC=25C

Forward current transfer ratio hFE

1000 25C 25C 300 100 30 10 3 1 0.01 0.03

0.1

0.3

10

0.1

0.3

10

Transition frequency fT (MHz)

3000

TC=100C

0.1

0.3

10

Collector current IC (A)

Collector current IC (A)

Collector current IC (A)

Area of safe operation (ASO)


100 30 103 Non repetitive pulse TC=25C

Rth(t) t
(1) Without heat sink (2) With a 100 100 2mm Al heat sink (1)

Thermal resistance Rth(t) (C/W)

Collector current IC (A)

102

10 ICP 3 IC 1 0.3 0.1 0.03 0.01 1 3 10 30 10ms DC t=1ms

10

(2)

2SD1273A

2SD1273

101

100

300

1000

102 104

103

102

101

10

102

103

104

Collector to emitter voltage VCE

(V)

Time t (s)

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