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KA5H0380R/KA5M0380R/KA5L0380R
SPS

Features
Precision fixed operating frequency (100/67/50kHz) Low start-up current(typ. 100uA) Pulse by pulse current limiting Over current protection Over voltage protecton (Min. 25V) Internal thermal shutdown function Under voltage lockout Internal high voltage sense FET Auto-restart mode

Description
The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed frequency oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection, over voltage protection, and temperature compensated precision current sources for loopcompensation and fault protection circuitry. Compared to discrete MOSFET and PWM controller or RCC solution, a SPS can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter.
TO-220F-4L

1. GND 2. DRAIN 3. VCC 4. FB

Internal Block Diagram


Vcc
5V Vref UVLO
GOOD LOGIC

INTERNAL BIAS

DRAIN SFET

OSC 9V 5 uA 1 mA _ 2.5R 1R + _ THERMAL S/D POWER ON RESET + L.E.B S Q R

FB

Rsens S R Q

7.5V

GND

27V

+ _

Rev. .5.0
2000 Fairchild Semiconductor International

KA5H0380R/KA5M0380R/KA5L0380R

Absolute Maximum Ratings


Characteristic Drain-source (GND) voltage
(1)

Symbol VDSS VDGR VGS IDM


(3)

Value 800 800 30 12 95 10 3.0 2.1 30 0.3 to VSD 35 0.28 25 to +85 55 to +150

Unit V V V ADC mJ A ADC ADC V V W W/C C C

Drain-Gate voltage (RGS=1M) Gate-source (GND) voltage Drain current pulsed Avalanche current (4) Continuous drain current (TC=25C) Continuous drain current (TC=100C) Supply voltage Analog input voltage range Total power dissipation Operating temperature Storage temperature
(2)

Single pulsed avalanche energy

EAS IAS ID ID VCC VFB PD (watt H/S) Derating TOPR TSTG

Notes: 1. Tj=25C to 150C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=51mH, starting Tj=25C 4. L=13H, starting Tj=25C

KA5H0380R/KA5M0380R/KA5L0380R

Electrical Characteristics (SFET part)


(Ta = 25C unless otherwise specified) Characteristic Drain-source breakdown voltage Symbol BVDSS Test condition VGS=0V, ID=50A VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) Min. 800 1.5 Typ. 4 2.5 779 75.6 24.9 40 95 150 60 7.2 12.1 Max. 250 1000 5 34 nC nS pF Unit V A A S

Zero gate voltage drain current

IDSS

Static drain-source on resistance (note) Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge (gate-source+gate-drain) Gate-source charge Gate-drain (Miller) charge
Note: Pulse test: Pulse width < 300S, duty < 2% 1 S = --R
(note)

RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

KA5H0380R/KA5M0380R/KA5L0380R

Electrical Charcteristics (SFET part) (Continued)


(Ta = 25C unless otherwise specified) Characteristic REFERENCE SECTION Output voltage (1) Temperature Stability
(1)(2)

Symbol

Test condition Ta=25C 25CTa+85C

Min.

Typ.

Max.

Unit

Vref Vref/T

4.80

5.00 0.3

5.20 0.6

V mV/C

OSCILLATOR SECTION Initial accuracy Initial accuracy Initial accuracy Frequency change with temperature (2) PWM SECTION Maximum duty cycle Maximum duty cycle FEEDBACK SECTION Feedback source current Shutdown delay current IFB Idelay Ta=25C, 0V<Vfb<3V Ta=25C, 5VVfbVSD 0.7 4 0.9 5 1.1 6 mA A Dmax Dmax KA5H0380R KA5M0380R KA5L0380R 62 72 67 77 72 82 % % FOSC FOSC FOSC KA5H0380R KA5M0380R KA5L0380R 25CTa+85C 90 61 45 100 67 50 5 110 73 55 10 kHz kHz kHz %

OVER CURRENT PROTECTION SECTION Over current protection UVLO SECTION Start threshold voltage Minimum operating voltage TOTAL STANDBY CURRENT SECTION Start current Operating supply current (control part only) SHUTDOWN SECTION Shutdown Feedback voltage Thermal shutdown temperature (Tj) Over voltage protection
(1)

IL(max)

Max. inductor current After turn on

1.89

2.15

2.41

Vth(H) Vth(L)

8.4 14

9 15

9.6 16

V V

IST IOPR

VCC=14V VCC<28

0.1 7

0.17 12

mA mA

VSD TSD VOVP

Vfb>6.5V VCC>24V

6.9 140 25

7.5 160 27

8.1 29

V C V

NOTE: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process

KA5H0380R/KA5M0380R/KA5L0380R

Typical Performance Characteristics

101 VGS Top: 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V 100

101

ID, Drain Current [A]

ID, Drain Current [A]

100 150oC

@ Notes: 1. 300 s Pulse Test 2. TC = 25oC 10-1 100 101 10-1 2

25oC

-25oC

@Notes: 1. VDS = 30 V 2. 300 s PulseTest 6 8 10

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 1. Output Characteristics

Figure 2. Thansfer Characteristics

8 7

Fig3. On-Resistance vs. Drain Current


10

Drain-Source On-Resistance

6 5 4 3 2 1 0 Vgs=20V

IDR, Reverse Drain Current [A]

Vgs=10V

RDS(on) , [" ]

150oC

25oC

@Note : Tj=25! 0 1 2 3 4 0.1 0.4 0.6 0.8

@Notes: 1. VGS = 0V 2. 300 s Pulse Test

1.0

ID,Drain Current

VSD, Source-Drain Voltage [V]

Figure 3. On-Resistance vs. Drain Current

Figure 4. Source-Drain Diode Forward Voltage

1000 900 800 700

Ciss = Cgs + Cgd (Cds = shorted)

10 VDS=160V

VGS,Gate-Source Voltage[V]

Coss = Cds + Cgd Crss = Cgd

VDS=400V VDS =640V

Capacitance [pF]

600 500 400 300 200 100 0 100

Ciss

Coss Crss
101

2 @Note : ID=3.0A 0

10

15

20

25

30

VDS, Drain-Source Voltage [V]

QG,Total Gate Charge [nC]

Figure 5. Capacitance vs. Drain-Source Voltage

Figure 6. Gate Charge vs. Gate-Source Voltage

KA5H0380R/KA5M0380R/KA5L0380R

typical performance characteristics (continued)

1.2

2.5

Drain-Source Breakdown Voltage

2.0 1.1

Drain-Source On-Resistance

BVDSS, (Normalized)

RDS(on), (Normalized)

1.5

1.0

1.0

0.9

@ Notes : 1. VGS = 0V 2. ID = 250A

0.5

@ Notes: 1. VGS = 10V 2. ID = 1.5 A

0.8

-50

50

100

150

0.0

-50

50

100

150

T J, Junction Temperature [oC]

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage vs. Temperature


102

Figure 8. On-Resistance vs. Temperature

3.5

ID , Drain Current [A]

Operation in This Area is Limited by R DS(on) 101 100 s 1 ms 100 10 ms DC 10 s

3.0 2.5

ID, Drain Current [A]


103

2.0 1.5 1.0 0.5 0.0

10-1

@ Notes : 1. TC = 25 oC 2. TJ = 150 C 3. Single Pulse


o

10

-2

101

102

40

60

80

100

120

140

VDS , Drain-Source Voltage [V]

TC, Case Temperature [oC]

Figure 9. Max. Safe Operating Area

Figure 10. Max. Drain Current vs. Case Temperature

Thermal Response

100 D=0.5 0.2 0.1 10- 1 0.05 0.02 0.01 @ Notes : 1. Z J C (t)=1.25 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t)

Z J C(t) ,

single pulse

10- 2 - 5 10

10- 4

10- 3

10- 2

10- 1

100

101

t 1 , Square Wave Pulse Duration

[sec]

Figure 11. Thermal Response

KA5H0380R/KA5M0380R/KA5L0380R

typical performance characteristics (control part)


(These characteristic graphs are normalized at Ta = 25C)
Fig.1 Operating Frequency
1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 #00 #25 #50

Fig.2 Feedback Source Current


1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25

25

50

75

100

125 150

Figure 1. Operating Frequency

Figure 2. Feedback Source Current

Fig.3 Operating Current


1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25

1.1 1.05

Fig.4 Max Inductor Current

Ipeak 1
0.95 0.9 0.85 0 25 50 75 100 125 150 0.8 -25 0 25 50 75 100 125 150

Figure 3. Operating Current

Figure 4. Max Inductor Current

1.5 1.3

Fig.5 Start up Current


1.15 1.1 1.05

Fig.6 Start Threshold Voltage

Istart

1.1 0.9 0.7 0.5 -25

Vstart 1
0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150

Figure 5. Start up Current

Figure 6. Start Threshold Voltage

KA5H0380R/KA5M0380R/KA5L0380R

typical performance characteristics (continued)


(These characteristic graphs are normalized at Ta = 25C)
Fig.7 Stop Threshold Voltage
1.15 1.1 1.05 1.15 1.1 1.05

Fig.8 Maximum Duty Cycle

Vstop 1
0.95 0.9 0.85 -25 0 25 50 75 100 125 150

Dmax 1
0.95 0.9 0.85 -25 0 25 50 75 100 125 150

Figure 7. Stop Threshold Voltage

Figure 8. Maximum Duty Cycle

Fig.9 Vcc Zener Voltage


1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 1.15 1.1 1.05

Fig.10 Shutdown Feedback Voltage

Vsd 1
0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150

Figure 9. VCC Zener Voltage

Figure 10. Shutdown Feedback Voltage

Fig.11 Shutdown Delay Current


1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 1.15 1.1 1.05

Fig.12 Over Voltage Protection

Vovp 1
0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150

Figure 11. Shutdown Delay Current

Figure 12. Over Voltage Protection

KA5H0380R/KA5M0380R/KA5L0380R

typical performance characteristics (continued)


(These characteristic graphs are normalized at Ta = 25C)
Fig.13 Soft Start Voltage
1.15 1.1 1.05 2.5 2 1.5

Fig.14 Drain Source Turn-on Resistance

Vss

1 0.9

0.95 0.85 -25

Rdson 1
0.5 0 25 50 75 100 125 150 0 -25 0 25 50 75 100 125 150

Figure13. Soft Start Voltage

Figure 14. Drain Source Turn-on Resistance

KA5H0380R/KA5M0380R/KA5L0380R

Package Dimensions

TO-220F-4L

10

KA5H0380R/KA5M0380R/KA5L0380R

Package Dimensions (Continued)

TO-220F-4L (Forming)

11

KA5H0380R/KA5M0380R/KA5L0380R

Ordering Information
Product Number KA5H0380R-TU KA5H0380R-YDTU KA5M0380R-TU KA5M0380R-YDTU KA5L0380R-TU KA5L0380R-YDTU
TU : Non forming Type YDTU :forming Type

Package TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming)

Rating 800V, 3A 800V, 3A 800V, 3A

Operating Temperature -25C to +85C -25C to +85C -25C to +85C

12

KA5H0380R/KA5M0380R/KA5L0380R

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KA5H0380R/KA5M0380R/KA5L0380R

LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
www.fairchildsemi.com 7/24/00 0.0m 001 Stock#DSxxxxxxxx 2000 Fairchild Semiconductor International

2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.