1 Scope The present specifications shall apply to Sanken silicon power MOSFET with built-in temperature compensation diodes, SAPM01N, a complementary device of the SAPM01P, for audio amplifier applications. 2 Appearance and outline drawings 2-1 Appearance The body shall be clean and shall not bear any stain, rust or flaw. 2-2 Outline drawings Refer to Fig.1 2-3 Marking The type number and lot number shall be marked by white-ink on the body and shall not be erased easily. 3 Ratings 3-1 Absolute Maximum Ratings (Ta=25℃) SAP M01N

Parameter Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Diode Forward Current Channel Temperature Storage Temperature ※1 PW≦100μsec, duty cycle≦1%

Symbol VDSS VGSS ID ID(pulse)※1 PD DiIF Tch Tstg

Ratings 150 ±20 ±20 ±80 150 (Tc=25℃) 10 150 -40~+150

Unit V V A A W mA ℃ ℃




2 Limits TYP Unit V ±100 100 4. are used.5%.0MHz VGS =0V SAP M01N Test Conditions ID=100μA. VGS=0V VGS=±20V VDS=150V. the frame temperature is controlled and detected to be 25℃ in order to appropriately trim the resistor value. VGS=0V VDS=10V. ・ For inspection.12 1800 330 80 80 210 ns 360 105 5. equipments with accuracy of 0.9│≦0.0 7.035 shall be satisfied.(Reference value : Idling current 100mA±20%) (at 50V/100mA) * (at 3mA) VR: Both ends voltage of the resistor after being trimmed ・ Measurement values have temperature coefficient.0 nA μA V S Ω MIN 150 MAX 4 Trimming process │VGS -(VF+VR)+2.8 V pF 0.0 3. 030416 SSE-22334 2/9 61432 .SAPM01N 3-2 Electrical Characteristics (Ta=25℃) Parameter Drain to Source Breakdown Voltage Gate to Source Leakage Current Drain to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(on) Ciss Coss Crss td(on) tr td(off) tf DiVF IF=3mA ID =10A VDD≒50V RL=5Ω VGS=10V VDS=25V f=1. ID=10A VGS=10V. ID=10A 3.5 10 0. ID=250μA VDS=50V. which is checked and corrected regularly. therefore.

045 -0.: TB-1014 030416 SSE-22334 3/9 61432 . No.SAPM01N *Plastic molded transistor accessories Material: MICA Thickness: 0.06 +0.005 mm Dimensions in mm DWG.

500 Fig. ~ Sep. No. 10 : Oct. 3rd & 4th letter:Day Description Lead terminal Heat sink Notes Material Cu Cu Specification Ni plating.1 LEXAM a.3g Dimensions in mm DWG. 11 : Nov. RG a. (The flash may appear at the opposite side. hFE rank shows the location where gate burr of 0. solder dip treatment Ni plating 01~31: Arabic Numerals c. 12 : Dec. 8.3mm max is produced.SAPM01N Outline Drawing of Lead Forming No. SAPM01 N b. Type Number Lot Number 1st letter:Last digit of year RG:60Ω±30% 2nd letter:Month 1~9 : Jan.) Weight:Approx.: TG3C-0501 030416 SSE-22334 4/9 61432 . b.

big enough to affect the idling current by even a slight variation of the IF. pin 1 and 2 are to be shorted. and that is characterized to constantly gain 100mA±20%. Therefore. Restrictions to realize non-adjustment of the idling current The idling current adjustment with external components is not required by setting the IF at 3mA. care should be taken as follows. and be sure to use both terminals as SOURCE by having both SOURCE terminals shorted. pin 4. Each product has two SOURCE terminals. the IF should be set at 3mA with an accuracy of +/-1%. The sum of the resistors values ranges between 400 ohms and 1300 ohms. Pinouts The product enables to shorten the board layout pattern by arranging the N-ch and P-ch device pinouts symmetrically. In order to realize the non-adjustment. The trimmed thick film resister is incorporated in each package for the purpose of absorbing the characteristic variation of the components. ending up with being unable to gain the target value. and in case of P-ch device.) 2. (In case of the N-ch device.SAPM01N CAUTION / WARNING 1. and 5 are to be shorted. + V DD Nch ③ ① Iidle=100mA±20% ② IF=3mA±1% ④ ④ ① ⑤ ② ⑤ Pch ③ - V DD 030416 SSE-22334 5/9 61432 .

External adjustment of the idling current. however. Be sure to confirm the exact value at an actual application. that the idling current is subject to the variation of the IF(=3mA). pin 4(of the SAPM01P) should be left “OPEN” and a variable resistor(VR) is inserted between pin 5(of the SAPM01P) and pin 2(of the SAPM01N). + VDD Nch ③ ① ② ④ ④ ① ⑤ ② VR ⑤ Pch ③ - VDD 030416 SSE-22334 6/9 61432 . With the 200 to 700 ohms of the VR the idling current is to set at 100mA.SAPM01N 3. Note. In order to make an external adjustment of the idling current.

Ltd. There are types of silicone grease of which oil ingredients may permeate the inside of products..) 030416 SSE-22334 7/9 61432 . ● Reinspect parts stored for a long time for rust leads and solderability..) (Toshiba Silicone Co. Recommended Silicone grease ● G746 ● YG6260 ● SC102 ( Shin-Etsu Chemical Co. please observe the following cautions. Since there is a possibility that it may shorten the lifetime of the products. ● (2) Cautions for Characteristic Tests and Handling ● When characteristic tests are carried out during inspection testing and other standard tests periods..) (Dow Corning Toray Silicone Co. protect the Power Transistors from surge of power from the testing device. Ltd. ● Avoid locations where dust or harmful gases are present and avoid direct sunlight. shorts between the leads and from misconnection. please coat the back surface of the Power Transistors and both surfaces of the insulating plate with a thin layer of silicone grease to improve heat transfer between the Power Transistors and the heatsink. (1) Cautions for Storage Ensure that storage conditions comply with the standard temperature (5 to 35℃) and the standard relative humidity (around 40 to 75%) and avoid storage locations that experience extreme changes in temperature or humidity. (3) Silicone Grease ● When using a heatsink.SAPM01N ! CAUTION/ WARNING Since reliability can be affected adversely by improper storage environment and handling methods during Characteristic tests.. Ltd. please pay sufficient attention to the choice of the silicone grease.

686 to 0. and / or distortion can arise in the product’s frame. Screw Tightening Torques Package MT25 FM20 (TO-220 & Full Mold ) MT100 FM100 (TO-3P & Full Mold ) MT200 (TO-3P Wide 2Screw Type) 2GR SLA ● Diameter of hole of heatsink: Less than 4mmφ As the slack of press mold for making the hole might become the cause of resin crack when tightening screws. or be wrapped up in aluminum foil. To avoid these problems. When soldering the devices. please be sure to minimize the working time under the following conditions. ● ● ● ● 030416 SSE-22334 8/9 61432 . (5-Pin SIP) Screw Tightening Torques 0.588 to 0.686 N・m (5 to 7 kgf・cm) 0. When the torque is too high. the equipment should also be grounded. Grounded wrist straps be worm and should have at least 1MΩ of resistance near operators to ground to prevent shock hazard.882 N・m (7 to 9 kgf・cm) 0. the head of a soldering iron or a solder bath must be grounded in order to prevent leak voltage from being applied to the devices.882 N・m (7 to 9 kgf・cm) 0. The devices should always be stored and transported in our shipping containers or conductive containers.784 N・m (6 to 8 kgf・cm) (5) Soldering Temperature ● When soldering the products.490 to 0. When using measuring equipment such as a curve tracer. ● 260℃ 10sec. and radiation effects are decreased.686 to 0. (6) Considerations to protect Power MOSFETs from Electrostatic Discharge ● When handling power MOSFETs device.882 N・m (7 to 9 kgf・cm) 0. please pay special attention to it.SAPM01N (4) Mounting Method of Heatsink ● Torque when Tightening Screws Thermal resistance increases when tightening torque is small. operator must be grounded. Table 1. the heatsink can be deformed. Workbenches where the devices are handled should be grounded and be provided with conductive table and floor mats. the screw can cut. (Soldering iron) Soldering shall not be performed at an area of 1.5mm from the main body.686 to 0. (Reflow or flow Soldering) ● 350℃ 3sec. Table 1 shows the recommended tightening torques for each product type.

) is strictly prohibited.). and then return to us this document with your signature(s) or seal(s) prior to the use of the products herein. ● ● Anti radioactive ray design is not considered for the products listed herein. ● Although Sanken undertakes to enhance the quality and reliability of its products. at their own risk. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment. intellectual property rights or any other rights of Sanken or any third party which may result from its use. the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. and its control systems. etc. ● When using the products herein.SAPM01N (7) Others ● Application and operation examples described in this document are given for reference only and Sanken assumes no responsibility for any infringement of industrial property rights. nuclear power control systems.). 030416 SSE-22334 9/9 61432 . measuring equipment. Users of Sanken products are requested to take. etc. Please return to us this document with your signature(s) or seal(s) prior to the use of the products herein. life support systems. fire / crime alarm systems. death fires of or damages to the society due to device failure or malfunction. etc. telecommunication equipment. please contact your nearest Sanken sales representative to discuss. various safety devices. When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment. preventative measures including safety design of the equipment or systems against any possible injury. the applicability and suitability of such products for the intended purpose object shall be reviewed at the users responsibility. Sanken products listed in document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances. traffic signal control systems or equipment. office equipment.

25 Ciss 0.VGS VDS=10V 10V 15 6.00E+00 1.00E-01 1.1 0.00E+01 030416 SSE-22334 Appendix 61432 .00E-02 PW [sec.1 100 Crss 0.00E-03 1.S.5V 15 ID [A] 10 ID [A] 10 6V  TC=-30℃   25℃ 125℃ 5 5. TC=25℃ 100 ID (pulse) max rch-c .00E-04 25 ms 25 (1s ms h o (1t) sh ot ) 1.] 1.SAPM01N ID .1 1 10 VDS [V] 100 1000 [℃/W] 0.PW TC=25℃  1shot 10 ID max 10 ED D ITTE IM MI ) )LLI N (O ON DSS( R RD 50 0μ 50 s 0μ s 1 ID [A] 1 rch-c 0.01 1.5V 5 VGS = 5V 0 0 5 10 VDS [V] 15 20 0 0 2 4 VGS [V] 6 8 10 RDS(on) .2 1000 Capacitannce [pF] RDS(on) [Ω] 0.VDS VGS = 0V f = 1MHz 0.O.TC ID=10A VGS=10V 0.3 10000 Cacacitance .15 Coss 0.05 0 -50 -25 0 25 50 TC [℃] 75 100 125 150 10 0 10 20 VDS [V] 30 40 50 A.VDS Tc=25℃ 20 20 ID .

Sign up to vote on this title
UsefulNot useful