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Diodes

1SS355

Switching diode

1SS355

Applications High speed switching

Features 1) Ultra small mold type.(UMD2) 2) High reliability.

Construction Silicon epitaxial planar

Dimensions (Unit : mm)

1.25±0.1 0.1±0.1     0.05 0.7±0.2 0.3±0.05     0.1 ROHM : UMD2 JEDEC : S0D-323 JEITA
1.25±0.1
0.1±0.1
    0.05
0.7±0.2
0.3±0.05
    0.1
ROHM : UMD2
JEDEC : S0D-323
JEITA : SC-90/A
dot (year week factory)
1.7±0.1
2.5±0.2

Taping specification (Unit : mm)

Land size figure (Unit : mm)

0.9MIN. 0.8MIN. 2.1
0.9MIN.
0.8MIN.
2.1

UMD2

Structure

figure (Unit : mm) 0.9MIN. 0.8MIN. 2.1 UMD2 Structure φ1.55±0.05 0.3±0.1 4.0±0.1 2.0±0.05 1.40±0.1
φ1.55±0.05 0.3±0.1 4.0±0.1 2.0±0.05 1.40±0.1 4.0±0.1 φ1.05 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1
φ1.55±0.05
0.3±0.1
4.0±0.1
2.0±0.05
1.40±0.1
4.0±0.1
φ1.05
3.5±0.05
1.75±0.1
2.75
8.0±0.2
2.8±0.1

1.0±0.1

Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Reverse voltage (repetitive peak)

V

RM

90

V

Reverse voltage (DC)

 

V

R

80

V

Forward current

 

I

FM

225

mA

Average rectified forward current

 

Io

100

mA

Surge current t=1s

I

surge

500

mA

Junction temperature

 

Tj

150

Storage temperature

Tstg

-55 to +150

Electrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

 

Conditions

Forward voltage

V

F

 

- -

1.2

V

I

F =100mA

Reverse current

I

R

 

- -

0.1

µA

V R =80V

Capacitance between terminals

Ct

 

- -

3

pF

V R =0.5V , f=1MHz

Reverse recovery time

trr

 

- -

4

ns

V R =6V , IF=10mA , RL=100Ω

Diodes

1SS355

TERMINALS:Ct(pF)

FORWARD CURRENT:IFSM(A)

DISSIPATION:P R (W)

Electrical characteristic curves (Ta=25°C)

100 10 Ta=125℃ 1 10 Ta=75℃ 0.1 Ta=25℃ 0.01 1 Ta=-25℃ 0.001 0.1 0.0001 FORWARD
100
10
Ta=125℃
1
10
Ta=75℃
0.1
Ta=25℃
0.01
1
Ta=-25℃
0.001
0.1
0.0001
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1
1.1 1.2
950
Ta=25
IF=100mA
940
n=30pcs
930
920
910
AVE:922.4mV
900
VF DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
5
AVE:13.6A
0
IFSM DISRESION MAP
100
Ifsm
t
10
1
0.1
1
10
100
PEAK SURGE
PEAK SURGE
FORWARD VOLTAGE:VF(mA)
FORWARD CURRENT:IFSM(A)
FORWARD CURRENT:IFSM(A)
IF(mA)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
RESERVE RECOVERY TIME:trr(ns)
REVERSE CURRENT:IR(nA)
Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)

10

1

0.1

f=1MHz 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ VR=0.5V f=1MHz n=10pcs AVE:0.961pF Ct
f=1MHz
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Ta=25℃
VR=0.5V
f=1MHz
n=10pcs
AVE:0.961pF
Ct DISPERSION MAP
0 20 40 60 80 100 120 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 100 90 Ta=25℃ VR=80V
0
20
40
60
80
100
120
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
100
90
Ta=25℃
VR=80V
80
n=30pcs
70
60
50
40
30
20
AVE:31.7nA
10
0
IR DISPERSION MAP
3
 Ta=25℃
 VR=6V
2.5
 IF=10mA
 RL=100Ω
2
1.5
1
AVE:1.3ns
0.5
0
trr DISPERSION MAP
1000
Rth(j-a)
100
Rth(j-c)
Mounted
on epoxy
board
IM=1mA
IF=10mA
10
time
1ms
300us
1
REVERSE POWER
CAPACITANCE BETWEEN
PEAK SURGE

0.001

0.01

0.1

1

10

100

1000

1

0.99

0.98

0.97

0.96

0.95

0.94

0.93

0.92

0.91

0.9

20 Ifsm 15 8.3ms 8.3ms 1cyc 10 5 0 0.1 1 10 100
20
Ifsm
15
8.3ms
8.3ms
1cyc
10
5
0
0.1
1
10
100

0.001

0.0005

0

NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS D=1/2 DC Sin(θ=180) 0 20 40 60 80 100 120
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
D=1/2
DC
Sin(θ=180)
0
20
40
60
80
100
120

TIME:t(ms)

IFSM-t CHARACTERISTICS

TIME:t(s)

Rth-t CHARACTERISTICS

REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS

Diodes

1SS355

0.20 DC 0.15 D=1/2 0.10 Sin(θ=180) 0A Io 0.05 0V VR t D=t/T VR=40V 0.00
0.20
DC
0.15
D=1/2
0.10
Sin(θ=180)
0A
Io
0.05
0V
VR
t
D=t/T
VR=40V
0.00
T
Tj=125℃
0
25
50
75
100
125
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)

AMBIENT TEMPERATURE:Ta(℃)

Derating Curve゙(Io-Ta)

0.20

0.15

0.10

0.05

0.00

DC D=1/2 Sin(θ=180) 0A Io 0V VR t D=t/T VR=40V T Tj=125℃ 0 25 50
DC
D=1/2
Sin(θ=180)
0A
Io
0V
VR
t D=t/T
VR=40V
T Tj=125℃
0
25
50
75
100
125

CASE TEMPARATURE:Tc(℃)

Derating Curve゙(Io-Tc)

20 15 AVE:9.4kV 10 AVE:2.4kV 5 0 C=200pF C=100pF R=0Ω R=1.5kΩ ELECTROSTATIC DDISCHARGE TEST ESD(KV)
20
15
AVE:9.4kV
10
AVE:2.4kV
5
0
C=200pF
C=100pF
R=0Ω
R=1.5kΩ
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)

ESD DISPERSION MAP

Appendix

Notes

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product described in this document are for reference only. Upon actual use, therefore, please request

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Application circuit diagrams and circuit constants contained herein are shown as examples of standardrequest that specifications to be separately delivered. use and operation. Please pay careful attention to the

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

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