1SS355

Diodes

Switching diode
1SS355
Applications High speed switching Dimensions (Unit : mm)
1.25±0.1 0.1±0.1     0.05

Land size figure (Unit : mm)
0.9MIN.

1.7±0.1

2.5±0.2

Features 1) Ultra small mold type.(UMD2) 2) High reliability.

0.8MIN.

Construction Silicon epitaxial planar
0.3±0.05 0.7±0.2     0.1

UMD2

Structure

ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory)

Taping specification (Unit : mm)
4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.3±0.1

3.5±0.05

8.0±0.2

1.40±0.1

4.0±0.1

φ1.05 1.0±0.1

Absolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current Average rectified forward current Surge current (t=1s) Junction temperature Storage temperature Symbol VRM VR IFM Io Isurge Tj Tstg Limits 90 80 225 100 500 150 -55 to +150 Unit V V mA mA mA ℃ ℃

Electrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR Ct trr Min. Typ. Max. 1.2 0.1 3 4 Unit V µA pF ns Conditions IF=100mA VR=80V VR=0.5V , f=1MHz VR=6V , IF=10mA , RL=100Ω

2.75

Rev.B

2.8±0.1

2.1

1/3

1SS355
Diodes
Electrical characteristic curves (Ta=25°C)
100 FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=125℃ 10 10 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 0.1 0.01 0.001 10 f=1MHz

Ta=75℃ Ta=25℃

1

1

Ta=-25℃

0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS

0.0001 0 20 40 60 80 100 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 120

0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS

950 FORWARD VOLTAGE:VF(mA) REVERSE CURRENT:IR(nA) 940 930 IF(mA) 920 910 900 VF DISPERSION MAP Ta=25 IF=100mA n=30pcs

100 90 80 70 60 50 40 30 20 10 0

1 Ta=25℃ VR=80V n=30pcs 0.99 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.98 0.97 0.96 0.95 0.94 0.93 0.92 0.91 0.9 AVE:0.961pF Ta=25℃ VR=0.5V f=1MHz n=10pcs

AVE:922.4mV

AVE:31.7nA

IR DISPERSION MAP

Ct DISPERSION MAP

20 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 1cyc 8.3ms

3 2.5 2 1.5 1 0.5 0 IFSM DISRESION MAP trr DISPERSION MAP AVE:1.3ns PEAK SURGE FORWARD CURRENT:IFSM(A)  Ta=25℃  VR=6V  IF=10mA  RL=100Ω

20 Ifsm 15 8.3ms 8.3ms 1cyc

10

10

5

AVE:13.6A

5

0

0 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100

100 Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A)

1000 Rth(j-a)

0.001

100

Rth(j-c)
Mounted on epoxy board

10

REVERSE POWER DISSIPATION:PR (W)

0.0005 DC Sin(θ=180)

D=1/2

10

IM=1mA

IF=10mA

1ms

time

300us

1 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100

1 0.001

0 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 20 40 60 80 100 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 120

Rev.B

2/3

1SS355
Diodes

0.20 DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.15

0.20

20 DC ELECTROSTATIC DDISCHARGE TEST ESD(KV) 15 AVE:9.4kV 10

D=1/2

0.15 D=1/2 0.10 0A 0V Io t T 0 VR D=t/T VR=40V Tj=125℃ 125 Sin(θ=180)

0.10 Sin(θ=180) 0.05 0A 0V Io VR t D=t/T VR=40V T Tj=125℃ 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta)

0.05

5

AVE:2.4kV

0.00 0

0.00 125

0

25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc)

C=200pF R=0Ω

C=100pF R=1.5kΩ

ESD DISPERSION MAP

Rev.B

3/3

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1