MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES>

PM150CSD120 PM150CSD120
FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE

PM150CSD120

FEATURE
a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 150A, 1200V Current-sense IGBT for 15kHz switching • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices) • Acoustic noise-less 30kW class inverter application

APPLICATION General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES

Dimensions in mm

135 ±1 120.5 ±0.5 40.68 LABEL

4- φ5.5 MOUNTING HOLES
13 15 17 19 14 16 18

24.1

Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UFO UP VUP1 VVPC VFO VP VVP1 VWPC WFO 11. 12. 13. 14. 15. 16. 17. 18. 19. WP VWP1 VNC VN1 NC UN VN WN FO

16.5 11

1234

5678

9 11 10 12

3.22
20 P

10 3-2

10 3-2 3-2 66.44

10 6-2
95.5 ±0.5 110 ±1

20

N B PPS

39.5

10.5 φ2.54
13

U

V 26 2-φ2.54 19-

W 3.22 26 0.5 4-R6 6-M5 NUTS Screwing depth Min9.0

3-2 0.5

0.5 ±0.3 51.5 A

11.6

33.7 34.7

24.1 –0.5 23.1 7.7 4

+1.0

21.3

A : DETAIL

10.6

5

Sep. 2001

WFO. VFO. UN • VN • WN-VNC Applied between : UFO-VUPC. 2001 . VN1-VNC Applied between : UP-VUPC.MITSUBISHI <INTELLIGENT POWER MODULES> PM150CSD120 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo=1. WFO-VWPC FO-VNC Sink current at UFO. VCIN = 15V TC = 25°C TC = 25°C TC = 25°C Ratings 1200 150 300 781 –20 ~ +150 Unit V A A W °C CONTROL PART Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC. FO terminals Ratings 20 20 20 20 Unit V V V mA Sep.5kΩ NC Fo VNC W N VN1 VN UN VWPC WP VWP1 VP VVP1 UP VUP1 UFO WFO VFO VVPC VUPC Rfo Rfo Rfo Rfo Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd Si Out Gnd TEMP Si Out Gnd Si Out Gnd Si Out Gnd Si Out Gnd Si Out Th NC N W V U P MAXIMUM RATINGS (Tj = 25°C. unless otherwise noted) INVERTER PART Symbol VCES ±IC ±ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V. VP-VVPC WP-VWPC. VWP1-VWPC. VFO-VVPC.

5 ~ 16.24 0. Pulsed –IC = 150A.0 0. 3) Tj = 25°C Tj = 125°C mA Sep. (Note-2) Inverter FWDi part (per 1 element).5V.3 1. (Base plate depth 3mm) Tc THERMAL RESISTANCES Symbol Rth(j-c)Q Rth(j-c)F Rth(j-c’)Q Rth(j-c’)F Rth(c-f) Parameter Test Condition Inverter IGBT part (per 1 element).0 3.15 0. (Note-2) Case to fin. (Note-1) TC measurement point is as shown below.16 0. VCIN = 15V VD = 15V.10 0. ELECTRICAL CHARACTERISTICS (Tj = 25°C.1 2. 2) Min. 2. — — — — — Max.5 — — — — — — Limits Typ. 4) Tj = 25°C Tj = 125°C (Fig.5 0. Thermal grease applied (per 1 module) Min. 3. 1) VCIN = 0V. VD = 15V. 0.16 0.018 Unit Junction to case Thermal Resistances Contact Thermal Resistance (Note-2) TC measurement point is just under the chips. Tj = 125°C Start Applied between : P-N.5 0.4 2.5 2. (Note-1) Inverter FWDi part (per 1 element). VCIN = 15V (Fig.5 1.2 1 10 Unit V V Switching Time Collector-Emitter Cutoff Current P N B U V W 63mm °C/W µs (Fig. VCIN = 15V↔0V VCC = 600V.4 2. — — — — — Limits Typ. Inverter Part. 2001 .MITSUBISHI <INTELLIGENT POWER MODULES> PM150CSD120 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Parameter Supply Voltage Protected by VCC(PROT) OC & SC VCC(surge) Supply Voltage (Surge) Module Case Operating TC Temperature Storage Temperature Tstg Viso Isolation Voltage Symbol Condition VD = 13. Charged part to Base. IC = 150A (Fig. Sinusoidal. Rth(f-a) should be measured just under the chips. AC 1 min. IC = 150A Tj = 125°C Inductive Load (upper and lower arm) VCE = VCES. If you use this value.8 3. Surge value or without switching (Note-1) Ratings 800 1000 –20 ~ +100 –40 ~ +125 2500 Unit V V °C °C Vrms 60Hz. — — — 0.5 1. unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Test Condition VD = 15V.2 2. (Note-1) Inverter IGBT part (per 1 element).7 — — Max.

2. of OC.MITSUBISHI <INTELLIGENT POWER MODULES> PM150CSD120 FLAT-BASE TYPE INSULATED PACKAGE CONTROL PART Symbol ID Vth(on) Vth(off) OC SC toff(OC) OT OTr UV UVr IFO(H) IFO(L) tFO Parameter Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Over Current Trip Level Short Circuit Trip Level Over Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width output output output output output Test Condition VN1-VNC VXP1-VXPC Applied between : UP-VUPC.5 — 10 1.3 — — — — 125 — 12. 2001 .6) Trip level Reset level Trip level Reset level (Note-3) (Note-3) Min.0 410 — 540 10 118 100 12. WP-VWPC UN • VN • WN-VNC VD = 15V. SC and UV protection operate by upper and lower arms. 3.0 Unit V V V kHz µs (Note-4) Allowable Ripple rating of Control Voltage : dv/dt ≤ ± 5V/µs. VP-VVPC.01 15 — Unit mA V A A µs °C V mA ms –20≤ Tj ≤ 125°C. 62 20 1. UV protection given pulse while over level.5 2. 3. 5. 3φ sinusoidal PWM VVVF inverter (Fig. VVP1-VVPC VWP1-VWPC. 2Vp-p Sep.8 ≥ 4. SC protection given pulse. OT & UV protection.5 — — — 1. VD = 15V –20 ≤ Tj ≤ 125°C VD = 15V. 5. 8) For IPM’s each input signals (Fig. VD = 15V VD = 15V Base-plate Temperature detection. of OT. of OT protection operate by lower arm.8 Max. VCIN = 15V VD = 15V (Fig. MECHANICAL RATINGS AND CHARACTERISTICS Symbol — — — Parameter Mounting torque Mounting torque Weight Main terminal Mounting part — Test Condition screw : M5 screw : M5 Min.5 2.5 — Unit N•m N•m g RECOMMENDED CONDITIONS FOR USE Symbol VCC VD VCIN(on) VCIN(off) fPWM tdead Parameter Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time Test Condition Applied across P-N terminals Applied between : VUP1-VUPC. — — 1. SC.0 920 Max.6) (Fig.7 282 200 — — 111 — 11.5 — 0.0 3.0 ≤ 20 ≥ 3. of OC.0 12.2 1.5 3. 45 15 1. 5. 7) Recommended value ≤ 800 15 ± 1.5 ≤ 0. VN1-VNC (Note-4) Applied between : UP-VUPC. VP-VVPC.8 2.5 — Limits Typ.6) Tj = 25°C Tj = 125°C (Fig. WP-VWPC UN • VN • WN-VNC Using Application Circuit input signal of IPM.0 Limits Typ. VFO = 15V VD = 15V (Note-3) Fault Fault Fault Fault Fault is given only when the internal OC.

W. the input terminals should be pulled up by resistores. 5 OC and SC Test Fig. the specified ON and OFF level setting for each input signal should be done.V.V.V.W trr Irr CS VCE Ic 90% Vcc 90% N b) Upper Arm Switching VCIN Signal input (Upper Arm) Signal input (Lower Arm) VD (all) P Ic VCIN U. the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device.W) IN Fo IN Fo P.) P. (U.V. (N) IC toff (OC) Constant Current OC Fig. When performing “OC” and “SC” tests. (N) VD (all) U.V. (N) Fig. 3 Switching time Test circuit and waveform P.W Vcc VD VCINN N Ic VCINP 0V VCINN 0V t t tdead tdead tdead Fig. 6 OC and SC Test waveform P VD VCINP U.W.W) A IN Fo VCIN Pulse VCE VCIN (15V) Over Current VD (all) U.W 10% 10% tc (on) 10% tc (off) 10% Fo CS Vcc td (on) tr td (off) tf VCIN (15V) Fo (ton= td (on) + tr) N (toff= td (off) + tf) VD (all) Ic Fig. 2 VEC Test VCIN (15V) VCIN Signal input (Upper Arm) Signal input (Lower Arm) Fo Fo U.V. (N) IC Fig.W. (U.W) VCIN (0V) V Ic VCIN (15V) V –Ic VD (all) U.W) IN Fo Short Circuit Current VCC IC Constant Current VCIN SC VD (all) U.V. 1 VCE(sat) Test a) Lower Arm Switching P Fig.V. etc.W. After this.V. 4 ICES Test P. Before appling any control supply voltage (VD). (U. (U. 2001 .V.V. to their corresponding supply voltage and each input signal should be kept off state. 2. (These test should not be done by using a curve tracer or its equivalent.MITSUBISHI <INTELLIGENT POWER MODULES> PM150CSD120 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. 7 Dead time measurement point example Sep.

Use High CMR type. Input current = 8 ~ 10mA. to work in active. Quick opto-couplers : TPLH.1µ VVP1 VFO Rfo OUT Si V VD VP VVPC VWP1 WFO Rfo M OUT Si W VD 20k WP VWPC In GND GND Vcc Fo OUT Si ¡ IF ≥ 10 µ UN ≥ 0. and minimize surge voltage using snubber capacitor between P and N terminal. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION . • • • • • • Sep. Use line noise filter capacitor (ex. Also. Slow switching opto-coupler : recommend to use at CTR = 100 ~ 200%. Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal. TPLH ≤ 0.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. The line between opto-coupler and intelligent module should be shortened as much as possible to minimize the floating capacitance.MITSUBISHI <INTELLIGENT POWER MODULES> PM150CSD120 FLAT-BASE TYPE INSULATED PACKAGE P 20k ≥ 10µ VUP1 UFO UP VUPC Rfo ¡ Vcc Fo In OUT Si U VD IF + – GND GND Vcc Fo In GND GND Vcc Fo ≥ 0.1µ 20k GND GND VN1 ≥ 10 µ ¡ Vcc Fo In OUT Si NC VD IF WN ≥ 0.8µs. Make inductance of DC bus line as small as possible.1µ VNC GND GND NC 5V 1k Fo Rfo : Interface which is the same as the U-phase Fig. and also to minimize the stray capacity between the input and output wirings of opto-coupler. care should be taken to minimize the instantaneous voltage charge of the power supply. Use 4 isolated control power supplies (VD). 4.1µ In GND GND N 20k TEMP ≥ 10 µ Th ¡ IF Vcc VN Fo In OUT Si ≥ 0. 2001 .

.datasheetcatalog.This datasheet has been download from: www.com Datasheets for electronics components.