Set No.

Code No. 222102 II Year II-Semester Supplementary Examinations November 2003 ELECTRONICS AND INSTRUMENTATION (Aeronautical Engineering) Time: 3 hours Max. Marks: 80 Answer any Five questions All question carry equal marks --Describe the construction and working of varactor diode and photo diode. Draw its characteristic curves. Describe the construction and working of PN Junction diode. Draw its voltamphere characteristic curve and its equivalent circuit. State the limitation in the operation of PN Junction diode. Explain about intrinsic and extrinsic semiconductors. Give the energy band description and the effect of temperature on semiconductors. State some of the mostly used semiconductors. Describe the construction and working of P-channel FET. Draw its volt-ampere and transfer characteristic curve. Draw the cross section of N-Channel and P-Channel MOSFET structures. Explain the construction and working of npn and pnp transistor. Sketch its characteristic curve for common emitter configuration. A common base transistor has an input resistance of 20Ω and output resistance of 100kΩ. The collector load is 1kΩ. If a signal of 500mV is applied between emitter and base, find the voltage amplification. Assume αac to be nearly one. Write short notes on Ratchets, Counters, Escapement. Explain in detail about Geneva mechanism. Explain how flapper nozzle system works. Write short notes on any one type of pneumatic operated valve. Write short notes on bellows, boosters, pneumatic relays. Compare the various characteristics of common base, common emitter and common collector configuration. Draw the input and output characteristics of common base connection. What do you infer from these characteristics? α Defineβ. Show that β = . 1−α ###

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1. 2. a) b)

3. a) b) 4.a) b)

5. 6. a) b) c) 7. 8. a) b) c)

Set No.
Code No. 222102 II Year II-Semester Supplementary Examinations November 2003 ELECTRONICS AND INSTRUMENTATION (Aeronautical Engineering) Time: 3 hours Max. Marks: 80 Answer any Five questions All question carry equal marks --1. a) b) c) 2. a) b) c) d) 3. a) b) c) 4. a) b) 5. 6. 7. Give the energy band description of conductors, semiconductors and insulators. Describe the construction and working of CRT. Explain how CRO is used for measurement of voltage, current and frequency. Explain the working principle of a Zener diode. Sketch the Zener diode model and its volt-ampere characteristics. State the significance of the knee voltage and break down voltage. Explain about diffusion and transition capacitance of PN Junction diode. Explain the formation of potential barrier in a PN Junction. Give the mechanism of hole current flow in semiconductors. Explain the operation of Tunnel diode. Describe the construction and working of n-channel FET. Draw its volt-amphere and transfer characteristic curves. Explain in detail the working of VJT. Draw its characteristic curve. Explain the construction and working of n-channel and p-channel MOSFET. Draw its output and transfer characteristic curve. Write short notes on Dials, Scales, Points and Indicating mechanism. Explain the following in detail: a) Pivot bearing b) Thrust ball bearing c) Crossed belt d) Bevel gears Write short notes on a) Pilot valve b) Pressure limit switch c) Pressure relief valves d) Volume booster. ###

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Set No.
Code No. 222102 II Year II-Semester Supplementary Examinations November 2003 ELECTRONICS AND INSTRUMENTATION (Aeronautical Engineering) Time: 3 hours Max. Marks: 80 Answer any Five questions All question carry equal marks --1. a) b) Explain clearly why magnetic deflection is preferred to electric deflection in CRT used in Television? What are the merits and demerits of magnetic deflection system over an electrostatic deflection system? In a CRT having electrostatic deflection system the deflection plates are 2 cms long and 0.5 cm apart. The fluorescent screen is placed at a distance of 40 cms from the centre of the plates. If the final anode voltage is 1000V. Calculate the deflection sensitivity. Sketch the energy band diagrams for (i) intrinsic (ii) n-type and (iii) p-type semiconductors. Indicate various levels. What is the effect of temperature on the positions of the Fermi levels? Explain how the voltage, phase shift and frequency are measured by using a CRO. Derive the expressions for diffusion and transition capacitances of a pn junction diode. Write short notes on: (i) Varactor diode. (ii) Photo diode. With the help of structure, symbol, energy band diagrams and characteristics explain the operation of Tunnel diode. A full wave rectifier operated through a step down transformer 230V/ 24-0-24V, 50Hz has diodes with forward resistance of 50Ω, drives a resistive load of 200Ω. Find dc output voltage, rectification efficiency, PIV and ripple factor. Explain the active, saturation and cut-off regions of a transistor and how it is biased in these regions. With the help of structure, symbol, equivalent circuit and characteristics explain the operations of UJT. Compare FET and BJT. With neat diagrams explain the operation of (i) deletion mode MOSFET and (ii) Enhancement mode MOSFET. Contd….2

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2. a) b) 3. a) b) 4. a) b)

5. a) b) 6. a) b)

Code No. 222102 7.

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Set No. 3

Explain about the following mechanical components. a) Pointers and indicating mechanisms b) Ratchets, counters and integrators. c) Dials and scales. d) Rack and pinion. Write short notes on the following: a) Pneumatic Relays b) Safety relief valves and Pilot valves. c) Pneumatic operated valves. d) Pneumatic cylinders and motors.

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Set No.
Code No. 222102 II Year II-Semester Supplementary Examinations November 2003 ELECTRONICS AND INSTRUMENTATION (Aeronautical Engineering) Time: 3 hours Max. Marks: 80 Answer any Five questions All question carry equal marks --1. a) b) c) Why semiconductor materials are preferred to make electronic components. Explain with energy level diagram. Explain the process of drift and diffusion in semiconductor materials. In a N-type semiconductor the Fermi level lies 0.2eV below the conduction band at 300ok. If the temperature is increased to 350ok, find the new position of Fermi level. Explain the focussing methods with electric as well as magnetic fields in a CRO. Give the detailed specifications of a CRO and list out the precautions to be taken to handle it in the laboratory. In CRT having magnetic deflection system, the screen is 25cm away from the centre of the deflection coils. The length of the uniform magnetic field along the axis is 5cm. If the deflection of 2cm is required on the screen, what is the amount of the magnetic flux density required for the final anode of 1000 volts? Also calculate deflection sensitivity. Differentiate between semiconductor diode and photo diode. What are the two types of capacitances across a PN junction? Which of these is more important in forward biased condition and why. Sketch the energy-band picture for a PN junction under open circuit condition, forward biased condition and reverse biased condition. Indicate the Fermi levels and barrier potential in each case. What is meant by thresh hold voltage and why is it higher for silicon than that of Germanium. Is the doping levels of P and N materials of a junction diode be equal. Give reasons. Explain the construction, working and V-I characteristics of an enhancement MOSFET. Explain the reason for having negative resistance characteristic in UJT and give its usefulness. For a CE, CC, CB transistor configurations sketch (i) current gain ∼RL (ii) Voltage gain ∼ RL (iii) input resistance ∼RL (iv) o/p resistance ∼Rs. Contd….2

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2. a) b) c)

3.a) b) c)

4. a) b) c) 5. a) b)

Code No. NR222102 6. a) b) c) 7. a) b) c) 8. a) b)

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Set No. 4

Explain the pneumatic booster. Explain the direct and reverse pneumatic actuators. List the advantages of pneumatic components over hydraulic and electrical components. What is a bellow and what is its role in the pneumatic field. Explain the principles of the following mechanical components and give their applications. (i) Pivots (ii) Linkages (iii) Ratchets (iv) Counters (v) Gears (vi) Spring scales. What are the different components of industrial scales and explain each indetail. Explain atleast with four examples, how the process of doping changes the characteristics of a pn junction. Derive the expression for the motion of electron in an electric field.

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