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AP4800AGM

RoHS-compliant Product

Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic
D D D D

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS RDS(ON) ID
G S S S

30V 18mΩ 9.6A

SO-8

Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

D

G S

Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1 3 3

Rating 30 ±20 9.6 7.7 40 2.5 0.02 -55 to 150 -55 to 150

Units V V A A A W W/ ℃ ℃ ℃

Continuous Drain Current Total Power Dissipation Linear Derating Factor

Storage Temperature Range Operating Junction Temperature Range

Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3

Value 50

Unit ℃/W

Data and specifications subject to change without notice

1 200712245

VGS=0V.3Ω. Units 1. 2 . THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1. 2. VGS=0V IS=9A. VGS=0V VDS=24V.5V. PLEASE HANDLE WITH CAUTION. copper pad. ID=4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70 C) o Min. 30 1 - Typ. ID=250uA VDS=10V.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=2.Surface mounted on 1 in2 copper pad of FR4 board.Pulse width limited by Max. dI/dt=100A/µs Min. t <10sec . 24 14 Max.Pulse test 3. 125 ℃/W when mounted on Min.VGS=10V RD=15Ω VGS=0V VDS=25V f=1. ID=9A VDS=30V.1A. 13 21 9 12 2 7 7 7 22 7 710 155 145 Max. ID=250uA VGS=10V.5V VDS=15V ID=1A RG=3. ID=7A VGS=4V. Units 18 28 40 3 1 25 ±100 18 1350 V mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS.AP4800AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V. - Typ. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. VGS=0V VGS=±20V ID=9A VDS=20V VGS=4. ID=9A VGS=4. junction temperature.

Forward Characteristic of Reverse Diode Fig 6.AP4800AGM 40 40 T A =25 o C ID .6 -50 0 50 100 150 V GS .s.0 V 5. Drain Current (A) 10V 7.0 V 10 10 0 0 1 2 3 4 0 0 1 2 3 4 V DS . On-Resistance v. Junction Temperature ( C) o Fig 3. Gate Voltage Fig 4. Junction Temperature ( o C) Fig 5.0 0.8 8 0.0 V 4.s. Drain-to-Source Voltage (V) V DS .4 Normalized RDS(ON) 2 4 6 8 10 RDS(ON) (mΩ) 14 1.4 10 8 Normalized VGS(th) (V) 1.2 6 IS(A) T j =150 o C 4 T j =25 o C 1.6 ID=7A T A =25 ℃ 16 ID=9A V G =10V 1. Source-to-Drain Voltage (V) T j .0 10 0.2 -50 0 50 100 150 V SD . Normalized On-Resistance v. Typical Output Characteristics Fig 2.s. Drain Current (A) 30 20 V G = 3.6 0.2 0.2 12 1.0 V ID .0 V 4.8 2 0 0. Junction Temperature 1. Gate-to-Source Voltage (V) T j .8 1 1.5 V 20 V G = 3. Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 18 1. Gate Threshold Voltage v.6 0 0. Junction Temperature 3 .4 0.5 V T A = 150 C o 30 10V 7.0 V 5.

Gate Charge Characteristics Fig 8. Gate to Source Voltage (V) 8 V DS = 20 V 6 4 C (pF) 2 C oss C rss 100 0 5 10 15 20 25 1 5 9 13 17 21 25 29 0 Q G .01 0.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Maximum Safe Operating Area Fig 10.1 0.05 PDM t T 0. Effective Transient Thermal Impedance VDS 90% VG QG 4.1 T A =25 C Single Pulse 0. Gate Charge Waveform 4 . Switching Time Waveform Fig 12. Pulse Width (s) Fig 9. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0. Drain-to-Source Voltage (V) Fig 7.0001 0.1 10ms 100ms 1s DC 0.1 1 10 o 0.01 100 0. Total Gate Charge (nC) V DS . Drain-to-Source Voltage (V) t .AP4800AGM 12 1000 f=1.0MHz ID=9A 10 C iss VGS .01 0.02 0.2 ID (A) 1ms 1 0.1 1 10 100 1000 V DS .01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthia=125 ℃ /W Single Pulse 0.001 0.5 10 100us 0.

80 0.38 0 1.Dimension Does Not Include Mold Protrusions.51 0.35 0.22 4.All Dimension Are In Millimeters.19 4.25 5.27 8.00 A1 B C D E1 E L θ 2 3 4 e B e A A1 DETAIL A L θ 1. c DETAIL A Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 4800AGM YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5 .71 4.27 TYP 1.18 0.75 0.25 0.33 0.90 6.ADVANCED POWER ELECTRONICS CORP. 2.00 1.15 0.90 3.10 0.80 3.41 0.00 6.00 4. Package Outline : SO-8 D SYMBOLS Millimeters MIN NOM MAX A 8 7 6 5 E1 1 E 1.50 1.55 0.80 5.