You are on page 1of 8

UNISONIC TECHNOLOGIES CO.

, LTD 7N60
7.4A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION

Power MOSFET

The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

* * * *

FEATURES
RDS(ON) = 1.0 @ VGS = 10V, ID = 3.7A Fast Switching Capability Avalanche Energy Tested Improved dv/dt Capability, High Ruggedness

SYMBOL

ORDERING INFORMATION
Package TO-220 TO-220F TO-220F1 TO-220F2 TO-262 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tube

Ordering Number Lead Free Halogen Free 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TF1-T 7N60G-TF1-T 7N60L-TF2-T 7N60G-TF2-T 7N60L-T2Q-T 7N60G-T2Q-T 7N60L-TQ2-R 7N60G-TQ2-R 7N60L-TQ2-T 7N60G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source

www.unisonic.com.tw Copyright 2013 Unisonic Technologies Co., Ltd

1 of 8
QW-R502-076. O

7N60
ABSOLUTE MAXIMUM RATINGS (TC = 25C, unless otherwise specified)

Power MOSFET

PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 2) IAR 7.4 A 7.4 A Continuous ID Drain Current Pulsed (Note 2) IDM 29.6 A 530 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 142 Power Dissipation TO-220F/TO-220F1 PD 48 W TO-220F2 50 Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 , Starting TJ = 25C 4. ISD7.4A, di/dt200A/s, VDDBVDSS, Starting TJ = 25C

THERMAL DATA
SYMBOL JA JC RATINGS 62.5 0.88 2.6 2.5 UNIT C/W C/W

PARAMETER Junction to Ambient TO-220/TO-262/TO-263 Junction to Case TO-220F/TO-220F1 TO-220F2

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

2 of 8
QW-R502-076. O

7N60
ELECTRICAL CHARACTERISTICS (TC =25C, unless otherwise specified)
SYMBOL BVDSS IDSS TEST CONDITIONS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current

Power MOSFET

MIN TYP MAX UNIT 600 V 1 A 100 nA -100 nA 0.67 V/C 4.0 1.0 V pF pF pF ns ns ns ns nC nC nC V A A ns C

VGS = 0V, ID = 250A VDS = 600V, VGS = 0V Forward VGS = 30V, VDS = 0V Gate- Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250A,Referenced to 25C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250A Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.7A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, Output Capacitance COSS f=1.0 MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD =300V, ID =7.4A, RG =25 (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=480V, ID=7.4A, Gate-Source Charge QGS VGS=10V (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0V, IS = 7.4 A, dIF / dt = 100A/s (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width300s, Duty cycle2% 2. Essentially independent of operating temperature

2.0 0.83

1200 1400 125 155 40 50 65 180 320 220 210 11 38 95 210 360 260 230

1.4 7.4 29.6 320 2.4

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

3 of 8
QW-R502-076. O

7N60
TEST CIRCUITS AND WAVEFORMS
+ VDS + L

Power MOSFET

D.U.T.

RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD

Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period

VGS= 10V

IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt

Body Diode Recovery dv/dt VDS (D.U.T.) VDD

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

4 of 8
QW-R502-076. O

7N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL

Power MOSFET

VDS VGS RG

VDD 10V
Pulse Width 1s Duty Factor0.1%

D.U.T.

Switching Test Circuit

Switching Waveforms

12V

0.2F

50k 0.3F

Same Type as D.U.T. VDS

VGS DUT 3mA

Gate Charge Test Circuit

Gate Charge Waveform

Unclamped Inductive Switching Test Circuit

Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

5 of 8
QW-R502-076. O

7N60
TYPICAL CHARACTERISTICS
On-State Characteristics 10
VGS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottorm:5.5V Top:

Power MOSFET

Transfer Characteristics 10

1 0.1
Notes: 1. 250s Pulse Test 2. TC=25C

0.1 2 4 6

0.1

10

Notes: 1. VDS=50V 2. 250s Pulse Test

10

Drain-to-Source Voltage, VDS (V)


On-Resistance Variation vs. Drain Current and Gate Voltage 6 5 4 3 2 1
Note: TJ=25C

Gate-Source Voltage, VGS (V)


On State Current vs. Allowable Case Temperature 10 Reverse Drain Current, IDR (A)

Drain-Source On-Resistance, RDS(ON) ()

VGS=20V VGS=10V

0.1 0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1.0 Drain Current, ID (A)

Notes: 1. VGS=0V 2. 250s Test 1.2 1.4 1.6

Source-Drain Voltage, VSD (V)

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

6 of 8
QW-R502-076. O

7N60
TYPICAL CHARACTERISTICS(Cont.)

Power MOSFET

Drain-Source Breakdown Voltage, BVDSS (Normalized)

Drain-Source On-Resistance, RDS(ON) (Normalized)

Transient Thermal Response Curve 1


D=0.5

7.5 6.25 5.0 3.75 2.5


Notes: 1. JC (t) = 1.18C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDMJC (t)

Maximum Drain Current vs. Case Temperature

0.2 0.1 0.05 0.02 0.01 Single Pulse

0.1

1.25 0 25 50 75 100 125 Case Temperature, TC (C) 150

0.01 10-5

10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) Safe Operating Area 600V
Operation in This Area is Limited by RDS(on)

101

100s 1ms

100
DC Notes: 1. TJ=25C 2. TJ=150C 3. Single Pulse

10ms

10-1

10-2 100

101

102

600

103

Drain-Source Voltage, VDS (V)

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

7 of 8
QW-R502-076. O

7N60

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

8 of 8
QW-R502-076. O