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2SK2847

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2847
DC−DC Converter and Motor Drive Applications
Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 1.1 Ω (typ.) : |Yfs| = 7.0 S (typ.)
15.8 ±0.5
,

03.610.2

: IDSS = 100 µA (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 8 24 85 799 8 8.5 150 −55~150 Unit
5 45 ±0,2
.

5 45 ±0.2
.

V V V A A W mJ A mJ °C °C
1
.

Pulse (Note 1)

GATE
DRAIN

2

.

Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

3

.

SOURCE

JEDEC JEITA TOSHIBA

— — 2-16F1B

Weight: 5.8 g (typ.)

Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 1.47 41.6 Unit °C / W °C / W

Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 22.9 mH, RG = 25 Ω, IAR = 8 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.

1

2004-07-06

VGS = 0 V VDS = 10 V. A line indicates lead (Pb)-free package or lead (Pb)-free finish.4 — — — — — — Unit µA V µA V V Ω S VDS = 25 V. — — — — — 1.1 7. VDS = 0 V VDS = 720 V. VGS = 0 V ID = 10 mA. VGS = 0 V dIDR / dt = 100 A / µs Test Condition — — Min — — — — — Typ.0 — Typ. f = 1 MHz — — pF ID=4A VOUT — — n OV o . ID = 4 A Min — ±30 — 900 2. VGS = 0 V. VDS = 0 V IG = ±10 µA. tw = 10 s — — — — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr IDR = 8 A.0 1.9 — — Unit A A V ns µC Marking TOSHIBA K2847 Part No. VGS = 0 V IDR = 8 A. - = 4 70 000 — — — — — — ns /n m oVdd =400V Duty 1%.0 2040 45 190 25 60 20 95 58 32 26 Max ±10 — 100 — 4. ID = 1 mA VGS = 10 V. ID = 4 A VDS = 15 V. (or abbreviation code) Lot No.2SK2847 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge tf toff Qg Qgs Qgd VDD ≈ 400 V. — — — 1650 21 Max 8 24 −1. 2 2004-07-06 . VGS = 10 V. ID = 8 A Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 10V Test Condition VGS = ±30 V.0 — 3.

- 55- Z \/GS = 4.5 1 3 5 10 30 DRAIN CURRENT ID (A) DRAIN CURRENT Id (A) 3 2004-07-06 . 3 5 OS D U 47 .5V i Q 5 o 4 1 8 12 16 20 40 80 120 VGS = 4V 160 200 DRAIN-SOURCE VOLTAGE VDs (V) DRAIN-SOURCE VOLTAGE VdS (V) id . 03 . 0.5 1 3 5 10 30 01 03 .Vds 0 55 .vos COMMON SOURCE 20 id .vgs 20 vds . Tc = 25°C PULSE TEST y / J r y 15>/l0 tí COMMON SOURCE Tc = 25°C PULSE TEST < 16 5 25 .2SK2847 id . 0.ID 30 Rdscon) .vqs z COMMON SOURCE VDS = 50V PULSE TEST 16 COMMON SOURCE Tc = 25<'C PULSE TEST Q > 16 00 ü 12 < o > o 12 id = 8A Di ¡IT c=-i 4 < K 3 2 2 4 6 8 10 4 8 12 16 20 GATE-SOURCE VOLTAGE Vqs (V) GATE-SOURCE VOLTAGE Vqs (V) |Yfs| . . Da 03 .id COMMON COMMON SOURCE SOURCE Tr = 95°n Vds=50V PULSE TEST 10 P ULSE Tc=-55°C z T EST vg s ' - = 10 4ioo 2 - 15 a 2 05 .

6 -0.Vos COMMON &u COMMON SOURCE VGs = 10V u PULSE TEST ID= 8A tí.5 . ¡y / . 1 3 5 10 30 50 100 - 80 - 40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE Vds (V) CASE TEMPERATURE Te (°C) PD . - /i 3 O M 9 OS Q t 05 . a z 10 Te = 25 c PL LSE TE£ T - í z o z tí.2SK2847 RDS(ON) .2 -0.4 / // // v( JS = ' 1 - . 3¿¿ Z > r > in f // ' i i Q - z 03 .8 -1.Te 1 5 > a COMMON SOURCE VDS = 10V lD = lmA PULSE TEST o > 3 o COMMON SOURCE ns P u < Vgs=0V f=lMHz Te = 25°C 0 0 3 0.VDS 10000 Vth .Te DYNAMIC INPUT/OUTPUT CHARACTERISTICS P > m o VDD = 100V z > o O < c o I o > i tí w > COMMON 5 o z g Z < SOURCE lD = 8A Tc = 250C á < PULSE TEST 40 80 120 160 200 0 20 40 60 80 100 CASE TEMPERATURE Te (°C) TOTAL GATE CHARGE Qg (nC) 4 2004-07-06 .0 -1 CASE TEMPERATURE Te CC) DRAIN-SOURCE VOLTAGE VDs (V) CAPACITANCE . IV 80 -40 0 40 80 120 160 _0. ' / ) / 3 / -0. 1 01 .Te 30 IDR .

iinearly with íncrease in temperature. Rth(ch-c) = l-«°C/W Im lOm lOOm 10 PULSE WIDTH (s) SAFE OPERATING AREA i i 11ii 1-r EAS " Tch 1000 ID MAX. 26 50 75 100 126 150 0 05 . SINGLE FUI Duty = t/T 0 005 .9 mH E AS = 1 B VDSS ⎞ ⎛ ⋅ L ⋅ I2 ⋅ ⎜ ⎟ − 2 B V DD ⎠ ⎝ VDSS 5 2004-07-06 . mu»-» In MAX.5 I 0 01 .tw Duty = 0.2SK2847 rth .::. (PULSE) . ti 30 100 300 1000 3000 CHANNEL TEMPERATURE (INITIAL) Tch CC) 10 DRAIN-SOURCE VOLTAGE VDs (V) BVDSS 15V - r-i L O-vw- lAR 15V h VDD m m / VDS TV WAVE FORM TEST CIRCUIT RG = 25 Ω VDD = 90 V. L = 22.\TIOtf Tc = 25°C a \ 200 X < SINGLE Q > 03 . NONREPETITIVE PULSE Tc = 25°C Curves must be derated < o 0 1 .« . (CONTINUOUS) < ' 800 i 600 a \ g i 3 05 . VDSS MAX. DC :.

transportation instruments. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Nevertheless.). Unintended Usage include atomic energy control instruments. traffic signal instruments. measuring equipment. industrial robotics.. office equipment. combustion control instruments. all types of safety devices. etc. under any law and regulations..2SK2847 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. domestic appliances. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. In developing your designs. bodily injury or damage to property. to comply with the standards of safety in making a safe design for the entire system. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer. airplane or spaceship instruments. 6 2004-07-06 . etc. • TOSHIBA is continually working to improve the quality and reliability of its products. when utilizing TOSHIBA products. medical instruments. semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold. please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices. personal equipment. It is the responsibility of the buyer. Also.” or “TOSHIBA Semiconductor Reliability Handbook” etc. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications.