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ME4542

N- and P-Channel 30-V (D-S) MOSFET


GENERAL DESCRIPTION
The ME4542 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
RDS(ON)25m@VGS=10V (N-Ch) RDS(ON)40m@VGS=4.5V (N-Ch) RDS(ON)35m@VGS=-10V (P-Ch) RDS(ON)58m@VGS=-4.5V (P-Ch) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

APPLICATIONS
Power Management DC/DC Converter LCD TV & Monitor Display inverter CCFL inverter LCD Display inverter

PIN

CONFIGURATION
(SOP-8) Top View

Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)


Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Tj=150) Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Ambient * Thermal Resistance-Junction to Case *
*The device mounted on 1in2 FR4 board with 2 oz copper

N-Channel
Symbol
10 secs Steady State

P-Channel
10 secs Steady State

Unit
V

VDSS VGSS TA=25 TA=70 ID IDM TA=25 TA=70 PD TJ RJA RJC 48 2.6 1.67 8 6.4

30 20 6.3 5 30 1.6 1 -55 to 150 78 50 46 2.7 1.7 -6.9 -5.5

-30 20 -5.4 -4.3 -30 1.6 1

77 48

/W /W

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ME4542
N- and P-Channel 30-V (D-S) MOSFET
Electrical Characteristics (TA =25 Unless Otherwise Specified)
Symbol Parameter
STATIC VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A VDS=VGS, ID=-250A VDS=0V, VGS=20V VDS=30V, VGS=0V VDS=-30V, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V,TJ=55 VDS=-30V, VGS=0V,TJ=55 VDS5V, VGS= 10V VDS-5V, VGS= -10V VGS=10V, ID= 6.7A VGS=-10V, ID= -6.1A VGS=4.5V, ID= 5.0A VGS=-4.5V, ID= -5.0A IS=1.7A, VGS=0V IS=-1.7A, VGS=0V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 21 30 32 48 0.8 -0.8 12 21 2 4 2.5 6 360 840 70 120 17 32 0.5 5.5 9.3 32 14 13 32 58 3.2 6.8 13 41 18 17 41 75 5 9 ns 420 980 pF 25 35 40 58 1.2 -1.2 15 25 nC 1.0 -1.0 1.5 -1.5 3.0 -3.0 100 100 1 -1 25 -25 A V

Conditions

Min

Typ

Max

Unit

IGSS

Gate Leakage Current

nA

ID(ON)

On-State Drain Currenta

RDS(ON)

Drain-Source On-State Resistancea

VSD DYNAMIC Qg Qgs Qgd Ciss Coss Crss Rg

Diode Forward Voltage

Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

N-Channel VDS=15V, VGS=10V, ID=6.7A P-Channel VDS=-15V, VGS=-10V, ID=-6.1A

N-Channel VDS=15V, VGS=0V, f=1MHz P-Channel VDS=15V, VGS=0V, f=1MHz

VDS=0V, VGS=0V, f=1MHz N-Channel VDD=15V, RL =15 ID=1A, VGEN=10V, RG=6 P-Channel VDD=-15V, RL =15 ID=-1A, VGEN=-10V,RG=6

td(on) tr td(off) tf

Notes: a. Pulse test; pulse width 300us, duty cycle 2%

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ME4542
N- and P-Channel 30-V (D-S) MOSFET
Typical Characteristics (TJ =25 Noted) N-CHANNEL

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ME4542
N- and P-Channel 30-V (D-S) MOSFET
Typical Characteristics (TJ =25 Noted) N-CHANNEL

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ME4542
N- and P-Channel 30-V (D-S) MOSFET
Typical Characteristics (TJ =25 Noted) P-CHANNEL

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ME4542
N- and P-Channel 30-V (D-S) MOSFET
Typical Characteristics (TJ =25 Noted) P-CHANNEL

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ME4542
N- and P-Channel 30-V (D-S) MOSFET

SOP-8 Package Outline

DIM A A1 B C D E e H L

MILLIMETERS (mm) MIN 1.35 0.10 0.35 0.18 4.80 3.80 1.27 BSC 5.80 0.40 0 6.20 1.25 7 MAX 1.75 0.25 0.49 0.25 5.00 4.00

Note: 1. Refer to JEDEC MS-012AA. 2. Dimension D does not include mold flash, protrusions or gate burrs . Mold flash, protrusions or gate burrs shall not exceed 0.15 mm per side.

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