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VISHAY

BY228/13 / BY228/15
Vishay Semiconductors

Standard Avalanche Sinterglass Diode

Features
Glass passivated junction Hermetically sealed package
949588

Applications
High voltage rectification Efficiency diode in horizontal deflection circuits

Mechanical Data
Case: SOD-64 Sintered glass case

Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 858 mg

Parts Table
Part BY228-13 BY228-15 Type differentiation VR = 1000 V; IFAV = 3 A VR = 1200 V; IFAV = 3 A SOD-64 SOD-64 Package

Absolute Maximum Ratings


Tamb = 25 C, unless otherwise specified Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Average forward current Junction temperature Storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A Test condition IR = 100 A Part BY228/13 BY228/15 see electrical characteristics tp = 10 ms, half sinewave BY228/13 BY228/15 Symbol VRSM VRSM VR VR IFSM IFAV Tj Tstg ER Value 1300 1500 1000 1200 50 3 140 - 55 to + 175 10 Unit V V V V A A C C mJ

Maximum Thermal Resistance


Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition on PC board with spacing 25 mm Symbol RthJA Value 70 Unit K/W

Document Number 86004 Rev. 1.6, 11-Aug-04

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BY228/13 / BY228/15
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current IF = 5 A VR = 1000 V VR = 1200 V VR = 1000 V, Tj = 140 C VR = 1200 V, Tj = 140 C Total reverse recovery time Reverse recovery time IF = 1 A, - diF/dt = 0.05 A/s IF = 0.5 A, IR = 1 A, iR = 0,25 A BY228-13 BY228-15 BY228-13 BY228/15 Test condition Part Symbol VF IR IR IR IR trr trr 2 2 Min Typ.

VISHAY

Max 1.5 5 5 140 140 20 2

Unit V A A A A s s

Typical Characteristics (Tamb = 25 C unless otherwise specified)


R thJA - Therm. Resist. Junction/Ambient (K/W)

40
3.5
I FA - Average Forward Current ( A )

30

3.0 2.5 2.0 1.5 1.0 0.5 0 0 RthJA = 70 K/W PCB: d = 25 mm

V R = VRRM half sinewave R thJA = 25 K/W l = 10 mm

20

10 TL 0 5 10 15 20 25 30

94 9081

l - Lead Length ( mm )

16403

25 50 75 100 125 150 Tamb - Ambient Temperature ( C )

Figure 1. Typ. Thermal Resistance vs. Lead Length

Figure 3. Max. Average Forward Current vs. Ambient Temperature

100 10 Tj = 150 C 1 Tj = 25 C 0.1 0.01


I R - Reverse Current ( A ) I F - Forward Current (A)

1000 V R = VRRM

100

10

0.001 0.0
16402

1 0.5 1.0 1.5 2.0 2.5 3.0


16404

25

50

75

100

125

150

V F - Forward Voltage ( V )

Tj - Junction T emperature ( C )

Figure 2. Forward Current vs. Forward Voltage

Figure 4. Reverse Current vs. Junction Temperature

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Document Number 86004 Rev. 1.6, 11-Aug-04

VISHAY

BY228/13 / BY228/15
Vishay Semiconductors

P R - Reverse Power Dissipation ( mW )

350 300 250 200 150 100 50 0 25

70
CD Diode Capacitance ( pF )

V R = V RM

60 50 40 30 20 10 0 0.1

f =1 MHz

PR -Limit @100 % VR PR -Limit @80 % VR

16405

50 75 100 125 Tj - Junction Temperature ( C )

150
16406

10

100

V R Reverse Voltage ( V )

Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature

Figure 6. Diode Capacitance vs. Reverse Voltage

Package Dimensions in mm (Inches)


Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max.
ISO Method E

1.35 (0.053) max.

26(1.014) min.

4.0 (0.156) max.

26 (1.014) min.

94 9587

Document Number 86004 Rev. 1.6, 11-Aug-04

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BY228/13 / BY228/15
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.

VISHAY

2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Document Number 86004 Rev. 1.6, 11-Aug-04

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