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BUT11/11A

BUT11/11A
High Voltage Power Switching Applications

TO-220 2.Collector 3.Emitter

NPN Silicon Transistor


Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BUT11 : BUT11A VCEO Collector-Emitter Voltage : BUT11 : BUT11A Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature

1.Base

Value 850 1000

Units V

V 400 450 9 5 10 2 4 100 150 - 65 ~ 150 V A A A A W C C

VEBO IC ICP IB IBP PC TJ TSTG

Electrical Characteristics TC=25C unless otherwise noted


Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BUT11 : BUT11A Collector Cut-off Current : BUT11 : BUT11A IEBO VCE(sat) Emitter Cut-off Current Collector-Emitter Saturation Voltage : BUT11 : BUT11A Base-Emitter Saturation Voltage : BUT11 : BUT11A Turn On Time Storage Time Fall Time VCE = 850V, VBE = 0 VBE = 9V, IC = 0 IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A VCC = 250V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 100 1 1 10 1.5 1.5 1.3 1.3 1 4 0.8 mA mA mA V V V V s s s Test Condition IC = 100mA, IB = 0 Min. 400 450 Typ. Max. Units V V

ICES

VBE(sat)

tON tSTG tF

* Pulsed: pulsed duration = 300s, duty cycle = 1.5%

Thermal Characteristics TC=25C unless otherwise noted


Symbol RjC Parameter Thermal Resistance, Junction to Case Typ Max 1.25 Units C/W
Rev. B1, August 2001

2001 Fairchild Semiconductor Corporation

BUT11/11A

Typical Characteristics
1000 10

100

VCE(sat)[V], SATURATION VOLTAGE

VCE = 5V

IC = 5 IB

hFE, DC CURRENT GAIN

10

0.1

VCE(sat)

1 0.01

0.1

10

0.01 0.01

0.1

10

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Collector-Emitter Saturation Voltage

10

10

IC = 5 IB

VBE(sat)[V], SATURATION VOLTAGE

VBE(sat)

IC[A], COLLECTOR CURRENT

0.1

0.01 0.01

0.1

10

0 0 200 400 600

BUT11
800

BUT11A
1000 1200

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage

Figure 4. Reverse Biased Safe OPerating Area

10

120

Ic MAX (Continuous)

100

IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

C D

80

60

0.1

40

BUT11A BUT11
0.01 1 10 100 1000

20

0 0 25 50
O

75

100

125

150

175

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area


2001 Fairchild Semiconductor Corporation

Figure 6. Power Derating


Rev. B1, August 2001

BUT11/11A

Package Demensions

TO-220
9.90 0.20
1.30 0.10 2.80 0.10

4.50 0.20

(8.70) 3.60 0.10

(1.70)

1.30 0.05

+0.10

9.20 0.20

(1.46)

13.08 0.20

(1.00)

(3.00)

15.90 0.20

1.27 0.10

1.52 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

10.08 0.30

18.95MAX.

(3.70)

(45 )

0.50 0.05

+0.10

2.40 0.20

10.00 0.20

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. B1, August 2001

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER FAST OPTOPLANAR

ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOS EnSigna FACT FACT Quiet Series

FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MICROWIRE OPTOLOGIC

PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SLIENT SWITCHER SMART START

Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TruTranslation TinyLogic UHC UltraFET VCX

STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY


FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms


Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2001 Fairchild Semiconductor Corporation

Rev. H3