Abstract of Silicon on Plastic The plastic substrates are thinner, lighter, shatterproof, flexible, rollable and foldable, making

Silicon-on-Plastic an enabling technology for new applications/products. This paper studies the development of Silicon on Plastic technology. dvances in polysilicon technology have expanded T!T "T#$% !$&' T( %S$ST)(S* technology to high-speed electronics applications such as Smart +ards, (!$, tags, portable imaging devices, photo-voltaic devices and solid-state lighting and other integrated circuit functions. The challenge of Silicon-on-Plastic technology is to overcome the fact that plastic melts at the temperature re-uired to build transistors in conventional T!T processes. Technological innovations have been made to accommodate silicon processing at low temperatures. T his paper describes an innovative ultra-low temperature poly-silicon T!T process on plastic substrates , .ey technologies includes near room-temperature silicon and oxide deposition steps, laser crystalli/ation and dopant activation. 'anufacturing issues related to plastic material compatibility in a T!T process are reviewed. &amination and de-lamination of plastic wafers to glass carrier wafers for manufacturability is discussed. n active matrix T!T backplane will be fabricated with an )&0, ")rganic &ight 0mitting ,iode* display to demonstrate this technology. Introduction of Silicon on Plastic +urrently, amorphous silicon thin film transistors "T!T1s* on glass are predominantly used in the flat panel display industry for notebook computers, mobile phones, P, 1s "Personal ,igital ssistant*, and other handheld devices. Today, flat panels made by amorphous T!T technology are replacing desktop computer +(T "+athode (ay Tube* monitors at an ever-increasing rate. morphous T!T technology applications are limited due to its inherently low electron mobility. pplications that re-uire integration of display drivers such as hand-held camcorder and cell phone displays are using poly-silicon based T!T1s for cost and space savings. This eliminates the need for costly assembly of conventional silicon chips onto the amorphous T!T display panels. dvances in poly-silicon technology have expanded T!T technology to highspeed electronics applications such as Smart +ards, (!$, tags and other integrated circuit functions. (ecently developed ultra low-temperature polysilicon T!T technology can be applaid on both glass and plastic substrates. The plastic substrates are thinner, lighter, shatterproof, flexible, rollable and foldable, making silicon-on-plastic an enabling technology for new applications/products. Some of the possibilities are roll-up/down displays, lightweight, thin wall-mounted T2s, electronic newspapers, and wearable

The challenge of silicon-on-plastic technology is to overcome the fact that plastic melts at the temperature re-uired to build transistors in conventional T!T processes. The ultra low-temperature process is compatible with plastic substrates and offers good T!T performance. The chuck is cooled to 356 + to keep the plastic temperature below 4556 + during the entire preoxidation and deposition process. Low temperature (< 100º C) gate o ide deposition ! proprietary deposition machine and a compatible process were developed to deposit high -uality T!T gate oxides at sub-4556 + temperatures. we obtain an oxide +-2 curve very close to the one calculated theoretically. while the gate leakage current density is less than 95 n /cm3 at 35-2 bias. The process is optimi/ed to provide high-density plasma for silicon dioxide deposition using Si#7 and )3.display/computing devices. . The gate oxide film at 455 nm thickness has a breakdown voltage of more than 852. and portable imaging devices. The result exhibits the difference between gate oxides with and without pre-oxidation. tags. preoxidation plasma treatment step using a mixture of #3 and )3 to grow a very thin oxide at the interface between the deposited silicon and the gate oxide with acceptable interface states was added to the process flow. :ith pre-oxidation. )ther possibilities include smart cards. Sufficiently high-density plasma must be generated in order to grow oxide with any significant thickness. $t is a special P0+2. plastic substrates offer the potential of roll-toroll "(3(* manufacturing which can reduce manufacturing cost substantially compared to conventional plate-to-plate "P3P* methods.eposition* system with an added plasma source configuration akin to 0+( "0lectron +yclotron (esonance* to generate high-density plasma at low temperature. 4. 'oreover. (!$. The cleanliness of the Si surface is critical prior to the oxidation process. Technological innovations have been made to accommodate silicon processing at low temperatures. photo-voltaic devices and solid-state lighting. "Plasma-0nhanced +hemical 2apor . small amount of hysteresis is observed before annealing takes place. s-deposited gate oxideshows good +-2 characterstics .

The extremely short laser pulses provide sufficient energy to melt the deposited Si.. The challenge with plastic substrates is to melt the deposited silicon while preserving the structural -uality of the underlying base material . while the subse-uent cooling forms a polycrystalline structure. This crystalli/ation techni-ue is similar to polysilicon formation on glass.e-+l excimer laser is used to crystalli/e sputtered silicon on plastic. thereby forming large polysilicon grains for T!T1s with much higher mobility than its amorphous counterpart.

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