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FDS8670 30V N-Channel PowerTrench MOSFET

August 2006

FDS8670

tm

30V N-Channel PowerTrench MOSFET


General Description
This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds(on) has been maintained to provide an extremely versatile device.

Features
21 A, 30 V Max RDS(ON) = 3.7 m @ VGS = 10 V Max RDS(ON) = 5.0 m @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 nC typical) 100% RG tested (0.9 typical) RoHS Compliant

Applications
High Efficiency DC-DC Converters: Notebook Vcore Power Supply Telecom Brick Synchronous Rectifier Multi purpose Point Of Load

5 6

4 3 2 1

SO-8

7 8

Absolute Maximum Ratings


Symbol
VDSS ID PD VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation

TA=25oC unless otherwise noted

Parameter

Ratings
30 20
(Note 1a)

Units
V V A W

21 105 2.5 1.2 1 55 to +150

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

50 25

C/W

Package Marking and Ordering Information


Device Marking FDS8670 Device Reel Size 13 FDS8670

Tape width 12mm

Quantity 2500 units


FDS8670 Rev C (W)

2005 Fairchild Semiconductor Corporation

FDS8670 30V N-Channel PowerTrench MOSFET

Electrical Characteristics
Symbol
BVDSS

TA = 25C unless otherwise noted

Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)

Test Conditions
VGS = 0 V, ID = 250 A

Min Typ Max Units


30 39 1 100 1 1.4 5 3.3 4.2 4.4 118 4040 1730 160 0.2 0.9 12 11 56 68 1.5 21 20 90 108 82 42 3.7 5.0 5.5 3 V mV/C A nA V mV/C m

Off Characteristics
BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)

ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 20 V, VDS = VGS, VGS = 0 V VDS = 0 V ID = 250 A

On Characteristics

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance Forward Transconductance

ID = 250 A, Referenced to 25C VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 18 A VGS=10 V, ID =21 A, TJ=125C VDS = 10 V, ID = 21 A

gFS Ciss

S pF pF pF ns ns ns ns nC nC nC nC 1.2 V ns A nC

Dynamic Characteristics
Input Capacitance Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd VSD trr IRM Qrr Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)

VDS = 15 V, f = 1.0 MHz f = 1.0 MHz

V GS = 0 V,

Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time

VDD = 15 V, VGS = 10 V,

ID = 1 A, RGEN = 6

Total Gate Charge at VGS = 10V Total Gate Charge at VGS = 5V GateSource Charge GateDrain Charge DrainSource Diode Forward Voltage Diode Reverse Recovery Time

VDD = 15 V,

ID = 21 A

58.5 30 9.5 5.5

DrainSource Diode Characteristics and Maximum Ratings


VGS = 0 V, IS = 2.1 A
(Note 2)

0.7 51 1.5 37

Diode Reverse Recovery Current Diode Reverse Recovery Charge

IF = 21 A, dIF/dt = 100 A/s

Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 50/W when 2 mounted on a 1 in pad of 2 oz copper

b) 105/W when 2 mounted on a .04 in pad of 2 oz copper

c) 125/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

FDS8670 Rev C (W)

FDS8670 30V N-Channel PowerTrench MOSFET

Typical Characteristics

105 87.5 ID, DRAIN CURRENT (A) 70 52.5 35 17.5 0 0

VGS = 10V 6.0V 4.5V 3.5V

3.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

3.4

VGS = 2.5V
2.8

2.2

1.6

3.0V 3.5V 4.0V 4.5V

2.5V

6.0V

10V

0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V)

0.4 0 35 70 ID, DRAIN CURRENT (A) 105

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.


0.011 RDS(ON), ON-RESISTANCE (OHM)

1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

ID = 21A VGS = 10V

1.4

ID = 10.5A
0.008

1.2

TA = 125oC
0.005

0.8

TA = 25oC
0.002

0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150

10

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature.


105

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.


1000 IS, REVERSE DRAIN CURRENT (A)

VGS = 0V

VDS = 5V

100 10 1 0.1 0.01


25oC -55oC

ID, DRAIN CURRENT (A)

70

TA = 125oC

35

TA =125oC

-55oC

0.001

0 1

25 C

0.0001
3.5

1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V)

1.2

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS8670 Rev C (W)

FDS8670 30V N-Channel PowerTrench MOSFET

Typical Characteristics (continued)

10 VGS, GATE-SOURCE VOLTAGE (V) ID = 21A 8

5000
f = 1MHz VGS = 0 V

4000 CAPACITANCE (pF)

VDS = 10V

20V

Ciss

6 15V 4

3000

2000
Coss

1000
Crss

0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60

0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30

Figure 7. Gate Charge Characteristics.


1000
P(pk), PEAK TRANSIENT POWER (W) 100

Figure 8. Capacitance Characteristics.


SINGLE PULSE RJA = 125C/W TA = 25C

ID, DRAIN CURRENT (A)

100

RDS(ON) LIMIT

10
10s VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25 C
o

100s 1ms 10ms 100ms 1s

80

60

DC

40

0.1

20

0.01 0.01

0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)

100

0 0.001

0.01

0.1

1 t1, TIME (sec)

10

100

1000

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1
D = 0.5 0.2

RJA(t) = r(t) * RJA RJA = 125 C/W P(pk)


0.01

0.1

0.1 0.05 0.02

t1

0.01

t2

SINGLE PULSE

TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2

0.001 0.0001

0.001

0.01

0.1 t1, TIME (sec)

10

100

1000

Figure 11. Transient Thermal Response Curve.


Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS8670 Rev C (W)

FDS8670 30V N-Channel PowerTrench MOSFET

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series GlobalOptoisolator GTO HiSeC I2C i-Lo ImpliedDisconnect IntelliMAX ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro Across the board. Around the world. The Power Franchise Programmable Active Droop ACEx ActiveArray Bottomless Build it Now CoolFET CROSSVOLT DOME EcoSPARK E2CMOS EnSigna FACT FAST FASTr FPS FRFET OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SerDes ScalarPump SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TCM TinyBoost TinyBuck TinyPWM TinyPower TinyLogic TINYOPTO TruTranslation UHC UniFET UltraFET VCX Wire

DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Advance Information

Product Status Formative or In Design First Production

Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

Rev. I20