APPH E3300 Homework 4 Reading: Griths Chapter 3 Problem 1:

Due at 4 pm February 21, 2014

Find the average potential over a spherical surface of radius R due to a point charge q located inside the sphere. Show that, in general, Qenc Vave = Vcenter + 4 0 R where Vcenter is the potential at the center due to all the external charges, and Qenc is the total enclosed charge. Problem 2: Prove that in a general electrostatics problem, the electric eld is uniquely determined when the charge density is given and the normal derivative V /n is specied on each boundary surface. Problem 3: Two non-overlapping spherical cavities of radii a and b are hollowed out from the interior of a neutral conducting sphere of radius R > a, b. At the center of each cavity is a point charge qa and qb . (a) Find the surface charge density on the boundary surface of the two cavities a and b . (b) What is the eld outside the conductor? (c) What is the eld within each cavity? (d) What is the force on qa and qb ? Problem 4:(Griths: Problem 3.11, page 127 in 3rd Ed, Problem 3.12, p 130 in 4th Ed.) Two long, straight copper pipes, each of radius R, are held a distance 2d apart. One is at potential V0 , the other at V0 . Find the potential everywhere. Problem 5:(Griths: Problem 3.15, page 136 in 3rd Ed, Problem 3.16, p 141 in 4th Ed.) A cubical box (sides of length a) consists of ve metal plates, which are welded together and grounded. The top is made of a separate sheet of metal,insulated from the others and held at a constant potential V0 . Find the potential inside the box. (See gure on page 137.) Problem 6: In an experiment measuring electron transport through a Silicon Nanowire of length 400 nm and diameter 5 nm, Coulomb Blockade oscillations were seen in the current through the device as a function of the gate voltage (Vg ) (Figure on following page). This Si Nanowire device was fabricated on a silicon back gate with a 50 nm thick oxide layer to insulate the nanowire from the gate electrode (see schematic diagram). (a) Calculate the capacitance of this cylindrical Nanowire on a conducting gate that is 50 nm away. You may assume that the gate is a cylinder around the nanowire to simplify the computation, and also ignore any nanowire edge eects.

(b) Determine the capacitance of the nanowire from the Coulomb Blockade data provided in the gure. How does it compare with the estimate in part (a)?

Nanowire
400 nm Source Drain

SiO2 Insulating Layer Si Gate Electrode

50 nm