Power Transistors

2SD1260, 2SD1260A
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB937 and 2SB937A
10.00.3

8.50.2 6.00.5

3.40.3

Unit: mm
1.00.1

G G G

High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings 60 80 60 80 5 4 2 35 1.3 150 55 to +150 Unit V

1.50.1

I Features

1.5max.
10.5min. 2.0

1.1max.

0.80.1

0.5max.

I Absolute Maximum Ratings

Parameter Collector to base voltage Collector to 2SD1260 2SD1260A 2SD1260 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg

2.540.3 5.080.5 1 2 3

1:Base 2:Collector 3:Emitter N Type Package Unit: mm

3.40.3 1.00.1

8.50.2

emitter voltage 2SD1260A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature

V V A A W C
1 10.00.3

6.00.3

1.50.4

2.0

3.00.2

4.40.5

0.80.1 2.540.3

R0.5 R0.5 1.1 max.

0 to 0.4

5.080.5

I Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1260 2SD1260A 2SD1260 2SD1260A 2SD1260 2SD1260A

1:Base 2:Collector 3:Emitter N Type Package (DS)

(TC=25C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf
*

Conditions VCE = 60V, IE = 0 VCE = 80V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 8mA, IB2 = 8mA, VCC = 50V

min

typ

max 1 1 2 2 2

4.40.5

60 80 1000 1000 10000 2.8 2.5 20 0.5 4 1

14.70.5

+0.4

+0

Unit mA

mA mA V

Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2

V V MHz s s s

Rank classification
R Q P 1000 to 2500 2000 to 5000 4000 to 10000

Internal Connection
B

Rank hFE2

Power Transistors
PC Ta
40

2SD1260, 2SD1260A
IC VCE
5 TC=25C 10 VCE=4V

IC VBE

Collector power dissipation PC (W)

35 30 25 20 15 10 5 0 0 20

Collector current IC (A)

IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA

Collector current IC (A)

(1) TC=Ta (2) With a 50 50 2mm Al heat sink (3) Without heat sink (1) (PC=1.3W)

8 25C TC=100C 6 25C

1 (2) (3) 0 40 60 80 100 120 140 160 0 1 2 3 4

0 5 6 0 0.8 1.6 2.4 3.2

Ambient temperature Ta (C)

Collector to emitter voltage VCE (V)

Base to emitter voltage VBE (V)

VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=250 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=25C 100C 25C 105

hFE IC
10000

Cob VCB
Collector output capacitance Cob (pF)
VCE=4V IE=0 f=1MHz TC=25C

Forward current transfer ratio hFE

3000 1000 300 100 30 10 3 1 0.1

104 TC=100C

103

25C 25C

102

0.1

0.3

10

10 0.01 0.03

0.1

0.3

10

0.3

10

30

100

Collector current IC (A)

Collector current IC (A)

Collector to base voltage VCB (V)

Area of safe operation (ASO)

100 30 103 Non repetitive pulse TC=25C

Rth(t) t
(1) Without heat sink (2) With a 50 50 2mm Al heat sink (1) (2) 10

Thermal resistance Rth(t) (C/W)

Collector current IC (A)

102

10 ICP 3 IC 1 0.3 0.1 0.03 0.01 1 3 10 30 300ms 1ms t=10ms

2SD1260A

2SD1260

101

100

300

1000

102 104

103

102

101

10

102

103

104

Collector to emitter voltage VCE

(V)

Time t (s)