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TIC116 SERIES SILICON CONTROLLED RECTIFIERS

Copyright 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997

G G G G G

8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA
K A G
1 2 3 TO-220 PACKAGE (TOP VIEW)

Pin 2 is in electrical contact with the mounting base.


MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING TIC116D Repetitive peak off-state voltage (see Note 1) TIC116M TIC116S TIC116N TIC116D Repetitive peak reverse voltage TIC116M TIC116S TIC116N Continuous on-state current at (or below) 80C case temperature (see Note 2) Average on-state current (180 conduction angle) at (or below) 80C case temperature (see Note 3) Surge on-state current (see Note 4) Peak positive gate current (pulse width 300 s) Peak gate power dissipation (pulse width 300 s) Average gate power dissipation (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL VRRM VDRM SYMBOL VALUE 400 600 700 800 400 600 700 800 8 5 80 3 5 1 -40 to +110 -40 to +125 230 A A A A W W C C C V V UNIT

NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k. 2. These values apply for continuous dc operation with resistive load. Above 80C derate linearly to zero at 110C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80C derate linearly to zero at 110C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms.

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Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

TIC116 SERIES SILICON CONTROLLED RECTIFIERS


APRIL 1971 - REVISED MARCH 1997

electrical characteristics at 25C case temperature (unless otherwise noted)


PARAMETER IDRM IRRM IGT Repetitive peak off-state current Repetitive peak reverse current Gate trigger current VD = rated VDRM VR = rated VRRM VAA = 6 V VAA = 6 V tp(g) 20 s VGT Gate trigger voltage VAA = 6 V tp(g) 20 s VAA = 6 V tp(g) 20 s VAA = 6 V IH Holding current Initiating IT = 100 mA VAA = 6 V Initiating IT = 100 mA V TM dv/dt NOTE Peak on-state voltage Critical rate of rise of off-state voltage ITM = 8 A VD = rated VD (see Note 6) IG = 0 TC = 110C 100 RGK = 1 k TEST CONDITIONS RGK = 1 k IG = 0 RL = 100 RL = 100 RGK = 1 k RL = 100 RGK = 1 k RL = 100 RGK = 1 k RGK = 1 k TC = - 40C TC = 110C 0.2 70 mA 40 1.7 V V/s 0.8 TC = 110C TC = 110C tp(g) 20 s TC = - 40C 5 MIN TYP MAX 2 2 20 2.5 1.5 V UNIT mA mA mA

6: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body.

thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 3 62.5 UNIT C/W C/W

resistive-load-switching characteristics at 25C case temperature


PARAMETER tgt tq Gate-controlled turn-on time Circuit-commutated turn-off time IT = 5 A IT = 5 A TEST CONDITIONS IG = 200 mA IRM = 10 A See Figure 1 See Figure 2 MIN TYP 0.8 11 MAX UNIT s s

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TIC116 SERIES SILICON CONTROLLED RECTIFIERS


APRIL 1971 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION


30 V 6 IT VG VA RG G VG IG VA 90% PMC1AA DUT 10% t gt

Figure 1. Gate-controlled turn-on time


30 V 6 0.1 F to 0.5 F R2

IA VA DUT RG G1 V G1 IG 0.1 VK (IRM Monitor)

R1

TH1 RG IG V G2

NOTES: A. Resistor R1 is adjusted for the specified value of I RM . B. Resistor R2 value is 30/IH , where I H is the holding current value of thyristor TH1. C. Thyristor TH1 is the same device type as the DUT. D. Pulse Generators, G1 and G2, are synchronised to produce an on-state anode current waveform with the following characteristics: tP = 50 s to 300 s G2 duty cycle = 1% E. Pulse Generators, G1 and G2, have output pulse amplitude, V G , of 20 V and duration of 10 s to 20 s.

G2 t P Synchronisation

V G1 V G2 IT IA tP 0 IRM VA

VT 0

tq

PMC1AB

Figure 2. Circuit-commutated turn-off time

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TIC116 SERIES SILICON CONTROLLED RECTIFIERS


APRIL 1971 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS
AVERAGE ON-STATE CURRENT DERATING CURVE
16 IT(AV) - Maximum Average On-State Current - A 14 12 0 10 Continuous DC 8 6 4 2 0 30 = 180 180 Conduction Angle
TI03AA

MAX CONTINUOUS ANODE POWER DISSIPATED vs CONTINUOUS ON-STATE CURRENT


PA - Max Continuous Anode Power Dissipated- W 100 TJ = 110C
TI03AB

10

40

50

60

70

80

90

100

110

01 01

10

100

TC - Case Temperature - C

IT - Continuous On-State Current - A

Figure 3.

Figure 4.

SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION


100 ITM - Peak Half-Sine-Wave Current - A
TI03AC

TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION


10 RJC(t) - Transient Thermal Resistance - C/W
TI03AD

10

TC 80C No Prior Device Conduction Gate Control Guaranteed 1 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles 100

01 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles 100

Figure 5.

Figure 6.

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TIC116 SERIES SILICON CONTROLLED RECTIFIERS


APRIL 1971 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT vs CASE TEMPERATURE
10 VAA = 6 V IGT - Gate Trigger Current - mA tp(g) 20 s VGT - Gate Trigger Voltage - V RL = 1 k 08
TC03AA

GATE TRIGGER VOLTAGE vs CASE TEMPERATURE


1
TC03AB

06

04 VAA = 6 V 02 RL = 100 RGK = 1 k tp(g) 20 s

1 -50

-25

25

50

75

100

125

0 -50

-25

25

50

75

100

125

TC - Case Temperature - C

TC - Case Temperature - C

Figure 7.

Figure 8.

GATE FORWARD VOLTAGE vs GATE FORWARD CURRENT


10 IA = 0 TC = 25 C tp = 300 s IH - Holding Current - mA Duty Cycle 2 % 1
TC03AC

HOLDING CURRENT vs CASE TEMPERATURE


VAA = 6 V RGK = 1 k Initiating IT = 100 mA
TC03AD

VGF - Gate Forward Voltage - V

10

01

001 01

10

100

1000

1 -50

-25

25

50

75

100

125

IGF - Gate Forward Current - mA

TC - Case Temperature - C

Figure 9.

Figure 10.

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TIC116 SERIES SILICON CONTROLLED RECTIFIERS


APRIL 1971 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS
PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT
25 TC = 25 C tP = 300 s Duty Cycle 2 %
TC03AE

GATE-CONTROLLED TURN-ON TIME vs GATE CURRENT


1.0 tgt - Gate-Controlled Turn-On Time - s 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VAA = 30 V RL = 6 TC = 25 C See Test Circuit and Waveforms 1000 IG - Gate Current - mA
TC03AF

VTM - Peak On-State Voltage - V

15

05

0 01

10

100

0.0 100

ITM - Peak On-State Current - A

Figure 11.

Figure 12.

CIRCUIT-COMMUTATED TURN-OFF TIME vs CASE TEMPERATURE


20 tq - Circuit-Commutated Turn-Off Time - s 18 16 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature - C VAA = 30 V RL = 6 IRM = 10 A See Test Circuit and Waveforms
TC03AG

Figure 13.

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TIC116 SERIES SILICON CONTROLLED RECTIFIERS


APRIL 1971 - REVISED MARCH 1997

MECHANICAL DATA TO-220 3-pin plastic flange-mount package


This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20

3,96 3,71

10,4 10,0

2,95 2,54 6,6 6,0 15,90 14,55

1,32 1,23

see Note B

see Note C

6,1 3,5

0,97 0,61 1 2 3

1,70 1,07

14,1 12,7

2,74 2,34 5,28 4,88 2,90 2,40

0,64 0,41

VERSION 1

VERSION 2

ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE

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TIC116 SERIES SILICON CONTROLLED RECTIFIERS


APRIL 1971 - REVISED MARCH 1997

IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright 1997, Power Innovations Limited

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