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Om Sakthi ADHIPARASAKTHI ENGINEERING COLLEGE,

MELMARUVATHUR 603319

Depart e!t "# E$e%tr"!&%' a!( C"

)!&%at&"! E!*&!eer&!*

Lecture Plan for EVEN Semester (2011-12) Name of the faculty: B.GANESAMOORTHY No. of hours allotted: !

Su"#ect: E$%&'& E(E$TR)$ $)R$*)TS + E(E$TRON ,E-)$ES No. of hours .la//ed: & $lass0Semester: ) E$E B 0 )) SEM
(ecture No

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1ortio/s .la//ed for co2era3e UNIT I CIRCUIT ANAL+SIS TECHNI,UES ;irchoff<s curre/t la= ;irchoff<s 2olta3e la= series a/d .arallel co//ectio/ of i/de.e/de/t sources R4 ( a/d $ Net=ork Theorems @The2e/i/ theorem Su.er.ositio/ theorem Norto/ theorem Ma7imum .o=er tra/sfer theorem ,uality StarCdelta co/2ersio/ 1ro"lems 1ro"lems UNIT II TRANSIENT RESONANCE IN RLC CIRCUITS Basic R( circuits a/d their res.o/ses to .ulse i/.uts Basic R( circuits a/d their res.o/ses to si/usoidal i/.uts Basic R$ circuits a/d their res.o/ses to .ulse i/.uts Basic R$ circuits a/d their res.o/ses to si/usoidal i/.uts Basic R($ circuits a/d their res.o/ses to .ulse i/.uts Basic R($ circuits a/d their res.o/ses to si/usoidal i/.uts freDue/cy res.o/se 1arallel reso/a/ce Series reso/a/ces E factor Si/3le tu/ed circuits. ,ou"le tu/ed circuits UNIT III SEMICONDUCTOR DIODES

Remarks

TE-T .OOK

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TE-T .OOK

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TE-T .OOK

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Re2ie= of i/tri/sic + e7tri/sic semico/ductors. Theory of 1N #u/ctio/ diode E/er3y "a/d structure $urre/t eDuatio/ S.ace char3e ca.acita/ces ,iffusio/ ca.acita/ces Effect of tem.erature a/d "reakdo=/ mecha/ism

S.Sali2aha/a/4 N. Suresh kumar a/d A. -alla2a/ra#4 5Electro/ic ,e2ices a/d $ircuits64 Tata McGra= Hill4 %/d Editio/4

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Fe/er diode a/d its characteristics UNIT IV TRANSISTORS 1ri/ci.le of o.eratio/ of 1N1 tra/sistors. 1ri/ci.le of o.eratio/ of N1N tra/sistors study of $E co/fi3uratio/s study of $B co/fi3uratio/s study of $$ co/fi3uratio/s com.ariso/ of $E4$B4$$ characteristics Breakdo=/ i/ tra/sistors o.eratio/ of NC$ha//el GHET o.eratio/ of 1C$ha//el GHET $om.ariso/ of NCcha//el a/d 1Ccha//el GHET. drai/ curre/t eDuatio/ MOSHET E/ha/ceme/t a/d de.letio/ ty.es structure a/d o.eratio/ com.ariso/ of BGT =ith MOSHET

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TE-T .OOK

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thermal effect o/ MOSHET UNIT V SPECIAL SEMICONDUCTOR DEVICES /,UALITATIVE TREATMENT ONL+0 Tu//el diodes 1)N diode 2aractor diode S$R characteristics a/d t=o tra/sistor eDui2ale/t model *GT ,iac Triac (aser $$, 1hotodiode

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TE-T .OOK

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1hototra/sistor 1hotoco/ducti2e cells 1hoto2oltaic cells (E,

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TE-T .OOK1 &. Gose.h A. Edmi/ister4 Mahmood4 Nahri4 5Electric $ircuits6 @ Shaum series4Tata McGra= Hill4 8%!!&: %. S. Sali2aha/a/4 N. Suresh kumar a/d A. -alla2a/ra#4 5Electro/ic ,e2ices a/d $ircuits64 Tata McGra= Hill4 %/d Editio/4 8%!!9:. >. ,a2id A. Bell4 5Electro/ic ,e2ices a/d $ircuits64 O7ford */i2ersity 1ress4 ' th Editio/4 8%!!9:. RE2ERENCES &. Ro"ert T. 1ay/ter4 5)/troduci/3 Electro/ics ,e2ices a/d $ircuits64 1earso/ Educatio/4 A th Educatio/4 8%!! :. %. Iilliam H. Hayt4 G.-. Gack4 E. ;emme"ly a/d ste2e/ M. ,ur"i/4 5E/3i/eeri/3 $ircuit A/alysis64Tata McGra= Hill4 th Editio/4 %!!%. >. G. Millma/ + Halki/s4 Satye"ra/ta Git4 5Electro/ic ,e2ices + $ircuits64 Tata McGra= Hill4 % /d Editio/4 %!!9.

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EC5161

H4O4D

Pr&!%&pa$
LTPC 3107

ELECTRIC CIRCUITS AND ELECTRON DEVICES 8Hor E$E4 $SE4 )T a/d Biomedical E/33. Bra/ches:

UNIT I CIRCUIT ANAL+SIS TECHNI,UES 15 ;irchoff<s curre/t a/d 2olta3e la=s @ series a/d .arallel co//ectio/ of i/de.e/de/t sources @ R4 ( a/d $ @ Net=ork Theorems @ The2e/i/4 Su.er.ositio/4 Norto/4 Ma7imum .o=er tra/sfer a/d duality @ StarCdelta co/2ersio/. UNIT II TRANSIENT RESONANCE IN RLC CIRCUITS 15 Basic R(4 R$ a/d R($ circuits a/d their res.o/ses to .ulse a/d si/usoidal i/.uts @ freDue/cy res.o/se @ 1arallel a/d series reso/a/ces @ E factor @ si/3le tu/ed a/d dou"le tu/ed circuits. UNIT III SEMICONDUCTOR DIODES 15 Re2ie= of i/tri/sic + e7tri/sic semico/ductors @ Theory of 1N #u/ctio/ diode @ E/er3y "a/d structure @ curre/t eDuatio/ @ s.ace char3e a/d diffusio/ ca.acita/ces @ effect of tem.erature a/d "reakdo=/ mecha/ism @ Fe/er diode a/d its characteristics. UNIT IV TRANSISTORS 15 1ri/ci.le of o.eratio/ of 1N1 a/d N1N tra/sistors @ study of $E4 $B a/d $$ co/fi3uratio/s a/d com.ariso/ of their characteristics @ Breakdo=/ i/ tra/sistors @o.eratio/ a/d com.ariso/ of NC $ha//el a/d 1C$ha//el GHET @ drai/ curre/t eDuatio/ @MOSHET @ E/ha/ceme/t a/d de.letio/ ty.es @ structure a/d o.eratio/ @ com.ariso/ of BGT =ith MOSHET @ thermal effect o/ MOSHET.

UNIT V SPECIAL SEMICONDUCTOR DEVICES /,UALITATIVE TREATMENT ONL+0 15 Tu//el diodes @ 1)N diode4 2aractor diode @ S$R characteristics a/d t=o tra/sistor eDui2ale/t model @ *GT @ ,iac a/d Triac @ (aser4 $$,4 1hotodiode4 1hototra/sistor4 1hotoco/ducti2e a/d 1hoto2oltaic cells @ (E,4 ($,. TOTAL 1 60 PERIODS TE-T .OOKS &. Gose.h A. Edmi/ister4 Mahmood4 Nahri4 5Electric $ircuits6 @ Shaum series4Tata McGra= Hill4 8%!!&: %. S. Sali2aha/a/4 N. Suresh kumar a/d A. -alla2a/ra#4 5Electro/ic ,e2ices a/d $ircuits64Tata McGra= Hill4 %/d Editio/4 8%!!9:. >. ,a2id A. Bell4 5Electro/ic ,e2ices a/d $ircuits64 O7ford */i2ersity 1ress4 ' th Editio/48%!!9:. RE2ERENCES &. Ro"ert T. 1ay/ter4 5)/troduci/3 Electro/ics ,e2ices a/d $ircuits64 1earso/ Educatio/4 A th Educatio/4 8%!! :. %. Iilliam H. Hayt4 G.-. Gack4 E. ;emme"ly a/d ste2e/ M. ,ur"i/4 5E/3i/eeri/3 $ircuit A/alysis64Tata McGra= Hill4 th Editio/4 %!!%. >. G. Millma/ + Halki/s4 Satye"ra/ta Git4 5Electro/ic ,e2ices + $ircuits64Tata McGra= Hill4 % /d Editio/4 %!!9.

EC2155 CIRCUITS AND DEVICES LABORATORY 1. Verification of KVL and KCL 2. Verification of Thevenin and Norton Theorems. 3. Verification of superposition Theorem.

LT P C 0 0 3 2

4. Verification of Maximum power transfer and reciprocit theorems. !. "re#uenc response of series and para$$e$ resonance circuits. %. Characteristics of &N and 'ener diode (. Characteristics of C) confi*uration +. Characteristics of C, confi*uration -. Characteristics of ./T and 0C1 12. Characteristics of /")T and M30")T 11. Characteristics of 4iac and Triac.

12. Characteristics of &hotodiode and &hototransistor. TOTAL : 45 PERIODS