2SA2018 / 2SA2030 / 2SA2119K

Transistors

Low frequency transistor
2SA2018 / 2SA2030 / 2SA2119K
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.

2SA2018
0.3
(3)

(1) (2)

0.2 0.5 0.5 0.2 0.55 0.7

Applications For switching, for muting.

External dimensions (Unit : mm)

1.0

Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE (sat) ≤ 250mA At IC = 200mA / IB = 10mA

0.8 1.6
0.15

0.1Min.

Each lead has same dimensions

ROHM : EMT3 EIAJ : SC-75A JEDEC : SOT-416

Abbreviated symbol : BW

1.6

(1) Emitter (2) Base (3) Collector

2SA2030
0.2
1.2 0.32

1.2 0.8
(2) (3) (1)

0.2
0.4 0.4 0.8

0.13

0.5

0.22

Each lead has same dimensions

ROHM : VMT3

Abbreviated symbol : BW

Absolute maximum ratings (Ta=25°C)
0.95 0.95 1.9

(1) Base (2) Emitter (3) Collector

0.4

Collector current


0.15

(3)

1.6 2.8
0.8 1.1

Collector power dissipation Junction temperature Storage temperature
∗Single pulse, Pw=1ms

150 300 150 −55 to +150

mW °C °C

0.3Min.

(2)

Parameter Collector-base voltage Collector-emitter voltage

Symbol VCBO VCEO IC ICP VMT3 PC EMT3 SMT3 Tj Tstg

Limits 15 12 500 1

Unit V V mA A

2SA2119K

(1)

Each lead has same dimensions

ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346

Abbreviated symbol : BW

2.9

(1) Emitter (2) Base (3) Collector

Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 15 − − V IC=10µA 12 − − V IC=1mA Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO 6 − − V IE=10µA Collector cutoff current ICBO − − 100 nA VCB=15V 270 − 680 − DC current transfer ratio hFE VCE=2V / IC=10mA − 100 250 mV IC=200mA / IB=10mA Collector-emitter saturation voltage VCE (sat) − 260 − MHz VCE=2V, IE=10mA, fT=100MHz Transition frequency fT Output capacitance Cob − 6.5 − pF VCB=10V, IE=0A, f=1MHz

Rev.A

1/2

2SA2018 / 2SA2030 / 2SA2119K Transistors Packaging specifications and hFE Type hFE 2SA2119K 2SA2018 2SA2030 Package name Code Basic ordering unit (pieces) T146 3000 − − Taping TL 3000 − − T2L 8000 − − Electrical characteristic curves 1000 VCE=2V 1000 500 VCE=2V 1000 500 IC / IB=20 COLLECTOR CURRENT : IC (mA) 500 200 100 50 20 10 5 2 1 0 Ta=125°C Ta=25°C Ta= −40°C 200 100 50 20 10 5 2 Ta=125°C Ta=25°C Ta= −40°C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 Ta=125°C Ta=25°C Ta= −40°C 0. Collector-Base Voltage Emitter Input Capacitance vs.5 1.0 1.2 DC Current Gain vs.4 Collector-Emitter Saturation Voltage vs. Collector Current BASER SATURATION VOLTAGE : VBE (sat) (mV) 10000 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 50 100 200 500 1000 Ta= −40°C Ta=25°C Ta=125°C Fig.1 Grounded Emitter Propagation Characteristics Fig.1 0.5 1 2 5 10 20 50 100 Cob Cib Fig.2 0.3 Collector-Emitter Saturation Voltage vs.A 2/2 .7 Collector Output Capacitance vs. Collector Current (Ι) 1000 1000 500 TRANSITION FREQUENCY : fT (MHz) Ta=25°C IC / IB=20 500 200 100 50 20 10 5 2 1 1 2 5 10 20 VCE=2V Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 IC / IB=50 IC / IB=20 IC / IB=10 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IC (mA) Fig. Collector Current (ΙΙ) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 500 200 100 50 20 10 5 2 1 0. Emitter Current IE=0A f=1MHz Ta=25°C EMITTER TO BASE VOLTAGE : VEB (V) Fig.5 Base-Emitter Saturation Voltage vs.6 Gain Bandwidth Product vs.Collecter Current Fig.5 1 1 2 5 10 20 50 100 200 500 1000 1 1 2 5 10 20 50 100 200 500 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig. Emitter-Base Voltage Rev.

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