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2N5038
HIGH CURRENT NPN SILICON TRANSISTOR

I

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STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR

DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching applications.

1 2
TO-3

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEX V CER V CEO V EBO IC I CM IB P tot T stg Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE =-1.5V R BE =100 Ω ) Collector-Emitter Voltage (R BE < 50 Ω ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Value 150 150 110 90 7 20 30 5 140 -65 to 200 Unit V V V V V A A A W
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C

December 2000

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2 A I C = 0.5 3.8 250 100 T c = 150 o C Min.2A V CE = 28 V V CE = 45 V V BE = -4 V R BE = 20 Ω L = 180 µ H ∗ Pulsed: Pulse duration = 300 µs.2 A I C = 0.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 140 V V CE = 100 V V CE = 70 V V EB = 7 V V EB = 5 V I C = 0.5 0.5V IB = 1.25 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV Parameter Collector Cut-off Current (V BE = -1.3 1.5 5 0.2 A I C = 12 A I C = 20 A I C = 20 A I C = 12 A IC = 2 A I C = 12 A IC = 2 A IE = 0 R BE = 50 Ω R BE = 100 Ω V BE =-1.2 A IB = 5 A IB = 5 A VCE = 5 V V CE = 5 V VCE = 5 V V CE = 10 V V CB = 10 V f = 5 MHz f = 1 MHz 50 20 12 300 0.5 % ∗∗ Pulsed: 0.9 13 pF µs µs µs A A mJ 90 110 150 1 2. 2/4 .5 s non repetitive pulse. duty cycle 1.2N5038 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.5 1. Max. Typ. 50 10 20 50 5 Unit mA mA mA mA mA V V V V V V V I CEO I EBO V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CER(sus) ∗ Collector-Emitter Sustaining Voltage V CEX(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ V BE(sat) ∗ V BE ∗ h FE ∗ h fe C CBO tr ts tf I s/b ∗∗ E s/b Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain Collector-Base Capacitance Rise Time Storage Time Fall Time Second Breakdown Collector Current Second Breakdown Energy I C = 12 A V CC = 30 V I B1 = -IB2 = 1.

A B C D E G N P R U V 11.038 0.50 8.92 20.15 1.516 0.20 26.984 0.023 0.32 19.50 25.00 38.065 0.00 11.00 4.515 1.00 TYP.65 8.10 17. 0.00 10.748 0.30 30.161 1.649 0. 13.677 1.193 DIM.187 inch TYP.97 1.421 0.00 0.437 0.30 MIN.00 4.157 1.10 1.787 0. P G A D C U V O N R B P003F 3/4 E .351 0.50 30.045 0. MAX. MAX.059 0.327 0.547 1.2N5038 TO-3 MECHANICAL DATA mm MIN.433 0. 0.70 16.09 39.

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