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NGTB15N120IHLWG IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.
Features

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• • • • •

Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker Application Low Gate Charge These are Pb−Free Devices

15 A, 1200 V VCEsat = 1.8 V Eoff = 0.56 mJ
C

Typical Applications

• Inductive Heating • Consumer Appliances • Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C Diode pulsed current, Tpulse limited by TJmax Gate−emitter voltage Power Dissipation @ TC = 25°C @ TC = 100°C Operating junction temperature range Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Symbol VCES IC Value 1200 30 15 120 Unit V A G

G E

C

E

ICM IF

A A

TO−247 CASE 340L STYLE 4

30 15 100 $20 156 62.5 −55 to +150 −55 to +150 260

MARKING DIAGRAM

IFM VGE PD

A V W
15N120IHL AYWWG

TJ Tstg TSLD

°C °C °C A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION
Device NGTB15N120IHLWG Package Shipping

TO−247 30 Units / Rail (Pb−Free)

© Semiconductor Components Industries, LLC, 2012

August, 2012 − Rev. 1

1

Publication Order Number: NGTB15N120IHL/D

0 60 Unit °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter STATIC CHARACTERISTIC Collector−emitter breakdown voltage. INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss DIODE CHARACTERISTIC Forward voltage VGE = 0 V.8 2. VCE = 0 V V(BR)CES VCEsat VGE(th) ICES IGES 1200 − − 4. IF = 15 A.2 − 6.56 180 260 0.5 2. TJ = 150°C VGE = 20 V.0 100 V V V mA nA Test Conditions Symbol Min Typ Max Unit http://onsemi. VCE = 1200 V.8 2. IF = 15 A VGE = 0 V.0 5. TJ = 150°C VF 1. VCE = 1200 V VGE = 0 V. IC = 15 A Rg = 15 W VGE = 0 V/ 15V td(off) tf Eoff td(off) tf Eoff 165 200 0. gate− emitter short−circuited Gate leakage current. IC = 15 A VGE = 15 V.5 0. IC = 500 mA VGE = 15 V.95 mJ mJ ns ns VCE = 600 V. IC = 15 A Rg = 15 W VGE = 0 V/ 15V TJ = 125°C VCC = 600 V. VGE = 0 V.6 V TJ = 25°C VCC = 600 V.4 1. for Diode Thermal resistance junction−to−ambient Symbol RqJC RqJC RqJA Value 0.5 − − − − 1. IC = 15 A.5 1. gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Collector−emitter cut−off current. f = 1 MHz Cies Coes Cres Qg Qge Qgc − − − 3600 88 63 160 30 73 − − − nC pF VGE = 0 V. collector−emitter short−circuited DYNAMIC CHARACTERISTIC Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate to emitter charge Gate to collector charge SWITCHING CHARACTERISTIC. IC = 150 mA VGE = 0 V. for IGBT Thermal resistance junction−to−case.5 − − − − 2. IC = 15 A. VGE = 15 V VCE = 20 V.com 2 .NGTB15N120IHLWG THERMAL CHARACTERISTICS Rating Thermal resistance junction−to−case. TJ = 150°C VGE = VCE.

Output Characteristics TJ = −40°C TJ = 150°C 30 20 10 0 TJ = 25°C 8V 0 5 10 15 VCE. FORWARD VOLTAGE (V) Figure 5. Typical Transfer Characteristics 1000 100 Coes Cres 10 0 25 50 75 100 125 150 175 200 TJ = 150°C TJ = 25°C 0. COLLECTOR−EMITTER VOLTAGE (V) VGE.75 1.000 Cies IF.25 0. Diode Forward Characteristics http://onsemi. COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 0 1 2 3 4 5 6 9V 7V 7 8 VGE = 17 to 11 V 10 V 60 IC.50 0. COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 0 1 2 3 4 5 6 8V 7V 7 8 VCE. CAPACITANCE (pF) 16 14 12 10 8 6 4 2 0 0 Figure 4. COLLECTOR CURRENT (A) 50 40 Figure 2.25 1.NGTB15N120IHLWG TYPICAL CHARACTERISTICS 70 IC. COLLECTOR−EMITTER VOLTAGE (V) VF. COLLECTOR−EMITTER VOLTAGE (V) Figure 1. FORWARD CURRENT (A) C. Output Characteristics 70 IC. COLLECTOR CURRENT (A) VGE = 17 to 11 V 50 40 9V 30 20 10 0 10 V TJ = 150°C 8V 7V 0 1 2 3 4 5 6 7 8 VCE.00 1. Typical Capacitance Figure 6. COLLECTOR−EMITTER VOLTAGE (V) 9V VGE = 17 to 11 V 10 V TJ = 25°C 60 IC.com 3 . GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics 10.50 VCE.

2 1. IC Figure 12.5 0 Figure 8. TURN−OFF SWITCHING LOSS (mJ) 1000 tf SWITCHING TIME (ns) 100 td(off) 2.0 0. Switching Time vs.16 1. GATE RESISTOR (W) Figure 11.17 1. Energy Loss vs.12 5 15 Figure 10. Temperature VCE = 600 V VGE = 15 V TJ = 150°C Rg = 15 W 10 VCE = 600 V VGE = 15 V IC = 15 A Rg = 15 W 0 20 40 60 80 100 120 140 160 1 8 10 12 14 16 18 20 22 24 26 28 30 32 TEMPERATURE (°C) IC.6 0. COLLECTOR (A) 25 35 45 55 65 75 85 Rg.2 0 VCE = 600 V VGE = 15 V IC = 15 A Rg = 15 W 0 20 40 60 80 100 120 140 160 QG.NGTB15N120IHLWG TYPICAL CHARACTERISTICS VGE.0 0. Rg http://onsemi.13 1. Switching Time vs. GATE CHARGE (nC) TEMPERATURE (°C) Figure 7.15 1. Typical Gate Charge Eoff. TURN−OFF SWITCHING LOSS (mJ) 1000 tf SWITCHING TIME (ns) 100 td(off) 1.5 1.14 1.5 2.4 0. IC VCE = 600 V VGE = 15 V IC = 15 A TJ = 150°C 10 1 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 15 W 8 10 12 14 16 18 20 22 24 26 28 30 32 IC.8 0. Energy Loss vs. GATE−EMITTER VOLTAGE (V) 200 V 400 V 600 V Eoff.18 1.19 1. COLLECTOR (A) Figure 9.0 1. Energy Loss vs.com 4 . Temperature Eoff. TURN−OFF SWITCHING LOSS (mJ) 16 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 1.

COLLECTOR−EMITTER VOLTAGE (V) Figure 15. TC = 125°C 1 1 10 100 1000 VCE.6 0.6 1.2 0 375 425 475 525 575 625 VGE = 15 V IC = 15 A Rg = 15 W TJ = 150°C 675 725 775 VCE. Safe Operating Area 100 10 VGE = 15 V.4 0. TURN−OFF SWITCHING LOSS (mJ) 1000 1. COLLECTOR CURRENT (A) Figure 16.com 5 .1 0. COLLECTOR−EMITTER VOLTAGE (V) Figure 17. VCE 1000 IC. COLLECTOR CURRENT (A) 100 10 1 0. Reverse Bias Safe Operating Area http://onsemi. Rg 1000 tf SWITCHING TIME (ns) 100 td(off) 1000 IC.01 Figure 14.NGTB15N120IHLWG TYPICAL CHARACTERISTICS td(off) tf 100 Eoff. Switching Time vs. COLLECTOR−EMITTER VOLTAGE (V) SWITCHING TIME (ns) 10 1 VCE = 600 V VGE = 15 V IC = 15 A TJ = 150°C 5 15 25 35 45 55 65 75 85 Rg.4 1.1 1 10 100 1000 VCE. COLLECTOR−EMITTER VOLTAGE (V) 100 ms 1 ms 10 1 VGE = 15 V IC = 15 A Rg = 15 W TJ = 150°C 375 425 475 525 575 625 675 725 775 VCE. Switching Time vs. Energy Loss vs.8 0.0 0.2 1. GATE RESISTOR (W) Figure 13. VCE IC(max) Pulsed 50 ms IC(max) Continuous dc operation Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.

00001 0.01 0.002 0.NGTB15N120IHLWG TYPICAL CHARACTERISTICS 0.76E−4 0.03 0.08061 0.0001 Single Pulse 0.0 0.01 10% 5% 2% 1% Junction Ci = ti/Ri C1 C2 Cn Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.8 Ri (°C/W) 0.001 0.1 50% Duty Cycle THERMAL RESPONSE (ZqJC) 20% 0.0 0.190 0.1 0.1 1 10 R1 R2 Rn Case RqJA = 0.01 C1 C2 Cn Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.25813 0.00001 100 1000 PULSE TIME (sec) Figure 18.000001 0.0001 0.140 0.03570 0.1057 ti (sec) 1.1 2.com 6 .001 0.671 0.0E−4 1. Diode Transient Thermal Impedance Figure 20.387 0.114 ti (sec) 1.1 1 10 100 1000 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance 10 THERMAL RESPONSE (ZqJC) 50% Duty Cycle 20% 10% 5% 2% 1% R1 R2 Rn RqJA = 2.237 0.001 0.03 0.577 0.0001 0.000001 0.01 Single Pulse 0.48E−4 0.0 1 Junction Ci = ti/Ri Case Ri (°C/W) 0.002 0.1 2.001 0. Test Circuit for Switching Characteristics http://onsemi.

com 7 . Definition of Turn On Waveform http://onsemi.NGTB15N120IHLWG Figure 21.

com 8 . Definition of Turn Off Waveform http://onsemi.NGTB15N120IHLWG Figure 22.

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