School of Electrical and Computer Engineering Electronic circuit (EEET2097) Assignment #2
Group members:
Students’ Names: Shuai Liu Students’ Names: Zar Chi Myint Soe
Students’ Numbers: 3340909 Students’ Numbers: 3350595
Figure 1 Pushpull MOSFET power amplifier circuit
Part 1
First we know from the question that these two MOSFETs are matched, the circuit is
in symmetrical situation which is
and
, so when V _{i}_{n} =0V, we can assume that there is no output voltage or current. The current just goes from the bottom all the way to the top.
,
Now, we can treat the Source terminal as the common point (ground). Then we can work out the V _{G}_{S}_{,}_{P} , V _{G}_{S}_{,}_{N} , V _{D}_{S}_{,}_{P} and V _{D}_{S}_{,}_{N} .
Because of we can simply get
, so both transistors are in the saturation mode, then from the formula which is
(
) (
)
(
)
and we can use the same way to work out
.
So it can be proved that there is no output.
Figure 2 showing the drain current direction for both MOSFET at bias point
From above calculation, we can easily define this circuit is a class AB power amplifier based on there is current flow through the circuit without putting the input signal.
Part 2
Now, we need to keep both transistors in saturation mode to work out the limitation of the V _{o}_{u}_{t}_{.}
First, we start with the Ntype:
From the formula:
, we know:
Simplify it, we can get
Which is same as
So 

When 
, we firstly assume the Ptype MOSFET is switched off. So the 
current go through the Ntype MOSFET will all go across the load resistor.
Use the formula in the saturation mode 
( 
) _{(} 
_{)} which also can 

be written as 
( 
) _{(} 
_{)}  (1) 

From the circuit we know that 
( 
) 
( 
) 
So plug (2) and (3) to (1), we can get the
and
Note: we actually get two results from the quadratic equation, but the one has been removed is not suitable for the situation. It can be easily proved that the V _{o}_{u}_{t} based on that one is even bigger than the V _{S}_{S} .
Figure 3 The drain current direction at Vmax
Then, we consider the Ptype:
, then
(
)
So
which can prove that the ptype MOSFET has been switched off.
Note: if u assume there is current go through the Ptype MOSFET, it will cause the
V _{o}_{u}_{t} smaller than 2.972, hence the is definitely switched off.
, so ptype MOSFET
Finally, because of the symmetry of these circuit and also the MOSFET, we can use the same method to get the
Part3
(
) where
and f=1kHz so
(
mode for both transistors and
_{(}
_{)}
_{(}
(
))
) which is the maximum input to be in saturation
Hence we get the sine wave output with peak voltage is 2.972V, we can get:
(
)
(
)
To calculate the power dissipation on the two transistors, we can do it based on circuit on the bias point:
Because the symmetry, we can get:
So the total power dissipation on two transistors is:
Then, we just add dissipation power and output power to get the total DC input power:
Finally, the efficiency should be:
Pspice simulation Part 1
Figure 4 the push pull MOSFET amplifier at bias point on Pspice
The above figure 4 shows the drain current of NMOS and PMOS which are the same at bias point that means no current is flow through the load. The figure below represents the simulation of V _{G}_{S} and V _{D}_{S} of both MOSFET at bias point.
Figure 5 simulations of V _{G}_{S} and V _{D}_{S} on Pspice
Part 2
Figure 5 simulations of V _{i}_{n}_{,}_{m}_{a}_{x} and V _{o}_{u}_{t}_{,}_{m}_{a}_{x} on Pspice
Figure 6 the drain current of PMOS is conducting while NMOS is turned off and vice versa
Figure 7 The power dissipation of each MOSFET
Figure 8 Simulation for the power dissipation in the load resistor
To get the power dissipation in the load on Pspice, we use the formula
RMS(V(out))*RMS(I(R1)).
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