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VMM 1500-0075X2

Dual Power MOSFET Module


Phaseleg Conguration
3 Power Screw Terminals 8

VDSS = 75 V ID25 = 1560 A RDS(on) = 0.38 m


11 10 9

Gate Control Pins

11 10

MOSFET T1 + T2 Symbol VDSS VGS ID25 ID80 IF25 IF80 Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erec td(on) tr td(off) tf Eon Eoff Erec RthJC RthJH TC = 25C TC = 80C j j Conditions TVJ = 25C to 150C Maximum Ratings 75 20 1560 1240 1560 1240 V

Features Trench MOSFETs - low RDSon - optimized intrinsic reverse diode package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals for easy drive - isolated DCB ceramic base plate

Conditions
(TVJ = 25C, unless otherwise specied)

VGS = 10 V; ID = ID80; on chip level VDS = 20 V; ID = 2.5 mA VDS = VDSS; VGS = 0 V  VGS = 20 V; VDS = 0 V TVJ = 25C TVJ = 125C

e
2

Characteristic Values min. typ. max. 0.38 m 4 0.15 1.5 3.0 115 12.8 1.38 1950 580 450 260 1680 500 880 3 54 0.06 260 1680 520 720 3.5 49 0.08 0.094 0.08 0.13 V mA mA A nF nF nF nC nC nC ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ K/W K/W

-o

TC = 25C (diode) j TC = 80C (diode) j

u
A A A A

inductive load VGS = 10 V; VDS = 37 V ID = 1200 A; RG = 1.8 RG = RG ext + Rout driver

VGS = 10 V; VDS = 37 V; ID = 1200 A

inductive load VGS = 10 V; VDS = 37 V ID = 1200 A; RG = 1.8 RG = RG ext + Rout driver

with heat transfer paste (IXYS test setup)

j additional current limitation by external leads


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VGS = 0 V; VDS = 25 V; f = 1 MHz

TVJ = 25C

TVJ = 125C

t
V

Applications converters with high power density for - main and auxiliary AC drives of electric vehicles - 4 quadrant DC drives - power supplies with low input voltage, e.g. from fuel cells or solar cells

2010 IXYS All rights reserved

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VMM 1500-0075X2
Source Drain Diode Symbol VSD trr Qrr IRM trr Qrr IRM Module Symbol IRMS TVJ Tstg VISOL Md IISOL < 1 mA, 50/60 Hz Mounting torque Terminal connection torque (M6) Conditions per main terminal Maximum Ratings 500 -40...+175 -40...+125 3600 2.25 - 2.75 4.5 - 5.5 A C C Nm Nm Conditions IF = 1200 A; VGS = 10 V; VDS = 37 V; IF = 1200 A diF /dt = 800 A/s VDS = 50 V; IF = 1000 A diF /dt = 760 A/s TVJ = 25C TVJ = 125C TVJ = 25C Characteristic Values min. typ. max. 1.18 0.9 120 2.1 30 120 2.8 34 V V ns C A ns C A

TVJ = 125C

Characteristic Values min. typ. max. Weight * VDS = ID(RDS(on) + Rpin to chip)
)

-o
250

Rpin to chip *)

0.06

u
m g Dimensions in mm (1 mm = 0.0394) Optional accessories for modules keyed twin plugs (UL758, style 1385, CSA class 5851, guide 460-1-1) Type ZY180L with wire length 350mm - for pins 4 (yellow wire) and 5 (red wire)
- for pins 11 (yellow wire) and 10 (red wire)

M6x5 DIN970

1.5

+1 - 0.5

a h p
79 3

s
46.50.3 74.50.3 93 110

0.25

23.2

30

2.2

2.8

e
6.5

d = 0.8

62

48

11 21 34

18.50.3 8.5

t
Type ZY180R with wire length 350mm - for pins 7 (yellow wire) and 6 (red wire)
- for pins 8 (yellow wire) and 9 (red wire)
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V~

2010 IXYS All rights reserved

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VMM 1500-0075X2
1.2
IDSS = 6 mA

1200 1000

1.1 800

VDSS
1.0
normal.

ID [A]

600 400

0.9 200 0.8 -40 -20 0


TJ = 125C TJ = 25C

20

40

60

80 100 120 140

TVJ [C]

VGS [V]

Fig. 1
1200 1000 800
10 V 15 V

Drain source breakdown voltage VDSS versus junction temperature


6V 7V 8V

Fig. 2
1200

Typical transfer characteristics

t
10 V 15 V

5V

ID [A]

600 400 200 0 0.0

-o

1000 800 600 400

6V 7V 8V

5V

TJ = 25C

ID

TJ = 125C

[A]

VGS = 4 V

s
3.0

VGS = 4 V

200 0 0.0

VDS [V]

0.5

1.0

1.5

2.0

2.5

0.5

1.0

1.5

2.0

2.5

3.0

VDS [V]

2.0 1.6 1.2

Fig. 3 Output characteristics at TJ = 25C


1.0

Fig. 4 Output characteristics at TJ = 125C


3

VDS = 4 V TVJ = 125C

0.8

5V

RDS(on)
normal.

RDS(on) normalized

RDS(on)

0.6

RDS(on) [m]

RDS(on) [m]
1
6V 7V 10 V 15 V

0.8 0.4 0.0 -50

RDS(on) incl. 0.4 mounting resistance

0.2

-25

25

50

75

100 125 150

0.0

200

400

600

800

1000

1200

TVJ [C]

ID [A]

Fig. 5 RDS(on) normalized to ID = 1150 A value vs. junction temperature 2010 IXYS All rights reserved

Fig. 6

Drain source on-state resistance versus ID


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VMM 1500-0075X2
10 VDS = 37 V IG = 10 mA TVJ = 25C 2000

1600

VGS
6

[V]
4

ID 1200 [A]
800

400

400

800

1200

1600

0 -40

40

80

120

160

200

QG [nC]

TC [C]

Fig. 7

Gate charge characteristics

Fig. 8

Drain current ID versus case temperature TC

4 RG = 1.8 VDS = 37 V VGS = 0/10 V TVJ = 125C

tr

1600

80

t
RG = 1.8 VDS = 37 V VGS = 0/10 V TVJ = 125C td(off) Eoff 0 200 400 600 800 1000

800 tr 600

1200

60

-o

Eon, Erec [mJ]


2

Eoff

t
400

800

40

[ns]
1 10x Erec(off) 400

[mJ]

[ns]
200

e s
0 1200 td(on)

20

Eon 0 200 400 600 800

1000

0 1200

ID [A]

ID [A]

12 10 8

Fig. 9 Typ. turn-on energy and switching times versus drain current, inductive switching
2400 2000 tr 1600 1200 100

Fig. 10 Typ. turn-off energy and switching times versus drain current, inductive switching
2500 ID = 1200 A VDS = 37 V VGS = 0/10 V TVJ = 125C td(off) 2000

80

Eon, Erec
6

[mJ]
4 2

ID = 1200 A VDS = 37 V VGS = 0/10 V TVJ = 125C Eon


10x Erec(on)

t [ns]

Eoff 60 [mJ]
Eoff 40

tf

1500

t [ns]

1000

td(on)

800 400 20 500

0 10

0 10

RG []

RG []

Fig. 11 Typ. turn-on energy and switching times versus gate resistor, inductive switching 2010 IXYS All rights reserved

Fig. 12 Typ. turn-off energy and switching times versus gate resistor, inductive switching

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VMM 1500-0075X2
60 VR = 37 V ID = 1200 A TVJ = 125C 6 5 4 VR = 37 V ID = 1200 A TVJ = 125C

IRM [A]

40

Qrr
3

[C]
20 2 1 0 300 0 300

400

500

600

700

800

400

500

600

700

800

diF /dt [A/s]

diF /dt [A/s]

Fig. 13 Reverse recovery current IRM of the body diode vs. di/dt
160 VR = 37 V IF = 1200 A TVJ = 125C 1200 1000 800 600 400 200

Fig. 14 Reverse recovery charge Qrr of the body diode vs. di/dt

140

trr
120

[ns]
100

500

600

a
700

80 400

s
800

-o
IS [A]
0 0.0 0.2 0.4 0.6 0.8

u
1.0

t
1.2

diF /dt [A/s]

VSD [V]
Fig. 16 Source current IS vs. source drain voltage VSD (body diode)
0.10

Fig. 15 Reverse recovery time trr of the body diode vs. di/dt

0.08
VGS 0.1 VGS 0.9 ID 0.1 ID td(on) tr td(off) tf 0.9 ID 0.1 ID 0.9 VGS t

RthJH 0.06 [K/W] 0.04


0.02

VDS ID

0.00

10

100

1000

10000

t [ms]
Fig. 17 Denition of switching times 2010 IXYS All rights reserved Fig. 18 Typ. transient thermal impedance
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