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24 - SOLIDS AND SEMI-CONDUCTOR DEVICES

(Answers at the end of all questions}
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1 ) In a common base
output voltage is
amplifier, the phase difference between the Input signal voltage and
(a) 11: (b) 'It:/ 4 (c) (d) zero
2 ) In a full wave rectifier, circuit operating from 50 Hz mains frequency,
frequency in the ripple would be
(a) 25 Hz ( b I 50 Hz ( c I 70.7 Hz ( d I 100 Hz
3 ) When npn transistor is used as an amplifier
( a ) electrons move from base to collector
( c ) electrons move from collector to base
[ AIEEE 2005 }
2005}
4) For a transistor amplifier in common emitter   impedance of 1 M
( ht• = 50 and h.,., = 25 IJA IV ), the current gain i , '!{J
(a} -5.2 (b) -15.7 (c) -24.8 (d) 48.7. { AIEEE 2004 I
5) temperature to 80 K.
( a ) each of these increases ( b ) h o se decreases
( c ) copper strip increases and that aniUm decreases
The resistance of
( d ) copper strip decreases and o nlum increases [ AIEEE 2004, 2003 I
6 I The lids is due to
( a ) Heisenberg's uncertain
( c ) Bohr's correspondenc
( b ) Pauli's exclusion principle
( d ) Boltzmann's law
7 ) When p-n junction
(a I
( b I
(c) both the
(d) both
and barrier eight is Increased
widened and barrier height is reduced
•nJiriogic•n and barrier height are reduced
region and barrier height are Increased
I AIEEE 2004 I
I AIEEE 2004 I
8 I The variation of resistance with temperature in a metal and a
rises essentially due to the difference in
bonding ( b 1 crystal structure
g mechanism with temperature ( d } no. of charge carriers with temp.
I AIEEE 2003 I
middle of the depletion layer of a reverse biased p-n junction, the
the potential is zero ( b ) electric field is zero
potential is maximum ( d ) electric field is maximum 1 AlE EE 2003 1
10) In a p-n junction, the depletion layer consists of
( a ) electrons ( b ) protons ( c ) mobile ions ( d 1 immobile ions
11 ) In forward bias, the width of otential barrier in p-n )unction diode
( a 1 increases ( b ) decreases ( c ) remans constant
( d ) first increases, then decreases
[ AIEEE 2002 I
[ AIEEE 2002 }
24 - SOLIDS AND SEMI-CONDUCTOR DEVICES
(Answers at the end of all questions}
12 1 When a potential difference is applied across, the current passing through,
( a 1 an insulator at 0 K is zero
( b 1 a semiconductor at 0 K Is zero
( c 1 a metal at 0 K is finite
( d 1 a p-n diode at 300 K is finite if it is reverse biased
13 1 A transistor is used in common emitter mode as
( a 1 the base emitter junction is forward biased
( b 1 the base emitter junction is reverse biased
( c 1 the Input signal is connected In series with the
emitter junction
( d } the input signal is connected in series with
connector junction
14 1 In a p-n junction diode not connected to any
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9991
the base
(a I
( b I
( c I side to the p-type
( d I from the p-type side to the n-type
(liT 1998]
15 1 Which of the
I liT 1997 I
16)
( b 1 ionic solids
[liT 1996]
17 the output is shown in the figure. The
v
t
(b) A, C I c I B, 0 ( d} A, B, C, 0 [liT 19961
18 1 Read the following statements carefully:
Y : The resistivity of a semiconductor decreases with increase of temperature
Z : In a conducting solid, the rate of collisions between free electrons and ions increases
with increase of temperature
( a 1 Y is true but Z is false
( c 1 Both Y and Z are true
( b 1 Y is false but Z is true
( d 1 Y is true and Z is the correct reason for Y
(liT 1993]
24 - SOLIDS AND SEMI-CONDUCTOR DEVICES
(Answers at the end of all questions}
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19 1 In an n-p-n transistor circuit, the collector current Is 10 mA. If 90% of the electrons
emitted reach the collector
(a 1 the emitter current wll be 9 mA (b) the emitter current will be 11 mA
( c 1 the base current will be 1 mA ( d 1 the base current will be -1 mA
20 } Two Identical p-n
junctions may be
connected in series
with a battery in
three ways as shown
in the figure. The
potential drops
Circuit 1
across the two n-p junctions are equal in €1 +
( a 1 circuit 1 and circuit 2 ( b 1 circuIt 2 and cir i
( c 1 circuIt 3 and circuit 1 ( d 1 circuit 1 on I {liT 1989)
21 1 A piece of copper and another of from room temperature to
so• K. The resistance of
( a 1 each of them increases ( b ) decreases
( c 1 copper increases and germanium rea
( d 1 copper decreases and 1 eas s [liT 1988)
22 ) The impurity atoms with ilicon should be doped to make a p-type
semiconductor are those of
(a 1 phosphorous (   ( c 1 antimony
23 1 Select the correct state r the following:
( a 1 A diode can be a rectifier.
( c I aluminium [Ill 1988)
( b 1 A triode cannot as a rectifier.
( d 1 The linear I of the I - V characteristic of a triode is used for amplification
witho t dist · . [ Ill 1984 )
.. of a triode valve is 3 x 10
3
ohm and its mutual conductance is
volt. The amplification factor of the triode is
(b) 4.5 (c) 0.45 ( d I 2 X 10
6
1 111 1983, 1981 1
Answers