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FQP13N50 N-Channel QFET MOSFET

November 2013

FQP13N50
N-Channel QFET MOSFET
500 V, 12.5 A, 430 m Description Features
12.5 A, 500 V, RDS(on) = 430 m (Max.) @ VGS = 10 V, ID = 6.25 A Low Gate Charge (Typ. 45 nC) Low Crss (Typ. 25 pF) 100% Avalanche Tested

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

GD S

TO-220
S

Absolute Maximum Ratings


Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC = 25C unless otherwise noted.

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)

FQP13N50 500 12.5 7.9 50 30


(Note 2) (Note 1) (Note 1) (Note 3)

Unit V A A A V mJ A mJ V/ns W W/C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds

810 12.5 17 4.5 170 1.35 -55 to +150 300

Thermal Characteristics
Symbol RJC RCS Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Case-to-Sink, Max. FQP13N50 0.74 0.5 Unit C/W C/W

2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1

www.fairchildsemi.com

FQP13N50 N-Channel QFET MOSFET

Package Marking and Ordering Information


Part Number FQP13N50 Top Mark FQP13N50 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units

Electrical Characteristics
Symbol Parameter

TC = 25C unless otherwise noted.

Test Conditions

Min.

Typ.

Max.

Unit

Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ------0.48 ------1 10 100 -100 V V/C A A nA nA

On Characteristics
VGS(th) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance RDS(on) gFS

VDS = VGS, ID = 250 A VGS =10 V, ID =6.25 A VDS = 50 V, ID = 6.25 A

3.0 ---

-0.33 10

5.0 0.43 --

V S

Dynamic Characteristics
Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1800 245 25 2300 320 35 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400 V, ID = 13.4 A, VGS = 10 V VDD = 250 V, ID = 13.4 A, RG = 25
(Note 4)

------(Note 4)

40 140 100 85 45 11 22

90 290 210 180 60 ---

ns ns ns ns nC nC nC

--

Drain-Source Diode Characteristics and Maximum Ratings


IS Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 12.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 13.4 A, dIF / dt = 100 A/s --------290 2.6 12.5 50 1.4 --A A V ns C ISM VSD trr Qrr

Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 9.3 mH, IAS = 12.5 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD ! 13.4 A, di/dt ! 200 A/s, VDD ! BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature.

2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1

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FQP13N50 N-Channel QFET MOSFET

Typical Characteristics

ID , Drain Current [A]

ID , Drain Current [A]

10

VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :

10

150

25 10
0

10

-55
Notes : 1. VDS = 50V 2. 250 s Pulse Test

Notes : 1. 250 s Pulse Test 2. TC = 25

10

-1

10

10

10

-1

10

VDS , Drain-Source Voltage [V]

VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

1.4 1.2

RDS(ON) [ ], Drain-Source On-Resistance

1.0 0.8 0.6 0.4 0.2

VGS = 10V VGS = 20V

IDR , Reverse Drain Current [A]

10

10

150

25
Notes : 1. VGS = 0V 2. 250 s Pulse Test

Note : TJ = 25

0.0

10

20

30

40

50

10

-1

ID, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
12

3500 3000 2500

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

10

VDS = 100V VDS = 250V VDS = 400V

VGS, Gate-Source Voltage [V]

Ciss Coss

Capacitance [pF]

2000 1500 1000 500 0 -1 10

Crss

Notes : 1. VGS = 0 V 2. f = 1 MHz

2
Note : ID = 13.4 A

10

10

10

15

20

25

30

35

40

45

50

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1

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FQP13N50 N-Channel QFET MOSFET

Typical Characteristics

(Continued)

1.2

3.0

2.5

BV DSS , (Norm alized) Drain-Source Breakdown Voltage

RDS(ON) , (Normalized) Drain-Source On-Resistance

1.1

2.0

1.0

1.5

1.0
Notes : 1. VGS = 10 V 2. ID = 6.7 A

0.9

Notes : 1. VGS = 0 V 2. ID = 250 A

0.5

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation vs. Temperature


15 10
2

Figure 8. On-Resistance Variation vs. Temperature

Operation in This Area is Limited by R DS(on)

12

ID, Drain Current [A]

10

1 ms 10 ms DC

ID, Drain Current [A]

100 s

10 s
9

10

Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse


o o

10

-1

10

10

10

10

0 25

50

75

100

125

150

VDS, Drain-Source Voltage [V]

TC, Case Temperature []

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current vs. Case Temperature

10

ZJC(t), Thermal Response [oC/W]

D = 0 .5

0 .2
10
-1

0 .1 0 .0 5 0 .0 2 0 .0 1 s i n g le p u ls e

$ N o te s : 1 . Z ( J C ( t) = 0 .7 4 % / W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z ( J C ( t)

PDM t1 t2

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1

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FQP13N50 N-Channel QFET MOSFET

50K 12V 200nF 300nF

Same Type as DUT VDS

VGS 10V Qgs Qg

VGS

Qgd

DUT
IG = const. 3mA

Charge

Figure 12. Gate Charge Test Circuit & Waveform

VDS RG
V 10V GS

RL VDD

VDS

90%

VGS

DUT

VGS

10%

td(on) t on

tr

td(off) t off

tf

Figure 13. Resistive Switching Test Circuit & Waveforms

L VDS ID RG V 10V GS GS
tp

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp

DUT

VDS (t) Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1

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FQP13N50 N-Channel QFET MOSFET

DUT

+ VDS _

I SD L Driver RG
Same Type as DUT

VDD

VGS

dv/dt controlled by RG ISD controlled by pulse period

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

I SD ( DUT )

IFM , Body Diode Forward Current di/dt

IRM
Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1

www.fairchildsemi.com

FQP13N50 N-Channel QFET MOSFET

Mechanical Dimensions

Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB


Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductors online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003

2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1

www.fairchildsemi.com

FQP13N50 N-Channel QFET MOSFET

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Rev. I66

2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1

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