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Second Semester

EC 2151 ELECTRIC CIRCUITS AND ELECTRON DEVICES

(Regulation 2008)

Time: Three hours Maximum: 100 Marks

Answer ALL questions

PART - A (10 2 = 20 Marks)

1. Find R

eq

of the resistive network shown in Fig.1 below.

2. Determine the current drawn by the source as shown in Fig.2

3. For the circuit shown in fig.3 determine the value of Q at resonance and bandwidth of the

circuit.

4. A series RC circuit consists of resistor of 10 and a capacitor of 0.1F as shown in Fig.4. A

constant voltage of 20V is applied to the circuit at t= 0. Determine voltage across resistor

and capacitor.

5. State Mass-Action law.

6. Define diffusion capacitance.

7. Define Base width modulation and bring out its consequences.

8. Mention the advantages of MOSFET over JFET.

9. Draw the two transistor model of an SCR with its characteristics curve.

10. Under what principle does a photo voltaic cell work? Give its diagram.

PART - B (5 16 = 80 Marks)

11. (a) (i) Use Thevenins theorem to find the current through 5 resistor in the Fig.5 shown.

(8)

(ii) Find the voltage across 2 resistor in Fig.6 by using superposition theorem. (8)

Or

(b) (i) Determine current flowing through the 15 resistor in the circuit shown in Fig.7

using Norton theorem. (8)

(ii) Determine the maximum power delivered to the load in the circuit shown in Fig.8.

12. (a) (i) Find the complete solution for the current in a RLC circuit for sinusoidal input. (8)

(ii) The circuit shown in Fig.9 consists of R = 10, L= 0.5H and C= 200 F. If the

switch is closed when =30. Determine the current equation. (8)

Or

(b) (i) Consider the single tuned circuit shown in Fig.10 and determine

1. Resonant frequency

2. Output voltage at resonance and

3. Maximum output voltage.

Assume Rs >>w

r

L, and k=0.9 (8)

(ii) With neat diagram, obtain gain of a double tuned amplifier with critical value of

mutual inductance. (8)

13. (a) (i) State continuity equation and prove that concentration of changes is independent of

time with zero electric field. (8)

(ii) With neat diagram, explain the formation of PN junction and derive its depletion

width. (8)

Or

(b) (i) What is the breakdown mechanism found in Zener diode? Explain it with neat

diagram. (8)

(ii) Write detailed notes on space charge and diffusion capacitance. (8)

14. (a) Explain the construction and working principle of a JFET and obtain its characteristic

parameter. (16)

Or

(b) Explain the operation of a Depletion mode MOSFET and its comparison over

enhancement MOSFET with neat diagrams. (16)

15. (a) Discuss the construction and operation of a Tunnel diode with neat energy band

diagram. (16)

Or

(b) Write detailed notes on:

(i) DIAC and TRIAC (5)

(ii) Photodiode and Phototransistor (5)

(iii)LED and LCD (6)

B.E/B.Tech. DEGREE EXAMINATION, MAY/JUNE 2010

Second Semester

EC 2151 ELECTRIC CIRCUITS AND ELECTRON DEVICES

(Regulation 2008)

Time: Three hours Maximum: 100 Marks

Answer ALL questions

PART - A (10 2 = 20 Marks)

1. State Kirchhoffs current law and voltage law.

2. State Superposition theorem.

3. What is quality factor?

4. Find the resonant frequency in the ideal parallel LC circuit shown in Fig.1

5. Give the expression for transition capacitance and diffusion capacitance of a PN diode.

6. Define avalanche break down.

7. What is Early effect in CB configuration and give its consequences?

8. Distinguish clearly the difference between N with P channel FETs.

9. Give some applications of tunnel diode.

10. What is meant by photovoltaic cell?

PART - B (5 16 = 80 Marks)

11. (a) (i) State Thevenins and superposition theorems, mention one application. (8)

(ii) Find the Thevenins equivalent of the circuit shown in Fig.2. (8)

Or

(b) (i) Consider the circuit in Fig.3. (12)

(1) If R

out

= 3K, find the power delivered to it.

(2) What is the maximum power that can be delivered to any R

out

?

(3) What two different values of Rout will have exactly 20mW delivered to them?

(ii) State maximum power transfer theorem. (4)

12. (a) In the circuit shown in Fig.4, determine the complete solution for the current when the

switch is closed at t= 0. Applied voltage is v(t) = 400cos(500t +

), resistance R = 15,

inductance L = 0.2H and capacitance C = 3F. (16)

Or

(b) (i) The tuned frequency of a double tuned circuit shown in Fig.5 is 10

4

rad/sec. If the

source voltage is 2V and has a resistance of 0.1, calculate the maximum output

voltage at resonance if R

1

= 0.01, L

1

= 2H, R

2

= 0.1 and L

2

= 25H. (6)

(ii) Explain (using the relevant circuit) the double tuned circuit and derive the

expression for A and M

c

. (10)

13. (a) (i) Derive the diode current equation. (8)

(ii) Explain how the depletion region at a p-n junction is formed and explain with

relevant sketches for charge density, electric field intensity and potential energy

barriers at the junction. (8)

Or

(b) (i) Draw the Zener diode characteristics and explain the working of Zener diode. (8)

(ii) Draw the Zener regulation circuit and explain its function for input regulation and

output regulation. (8)

14. (a) Explain the input and output characteristics of a common emitter configuration with a

neat sketch. (16)

Or

(b) What is MOSFET? Explain the construction and working principle of enhancement

mode and depletion mode MOSFET with a neat diagram. (16)

15. (a) What is tunneling phenomenon? Describe the V-I characteristics and concepts of tunnel

diode with application. (16)

Or

(b) Explain the negative resistance characteristics of Uni-junction transistor with neat

sketch. (16)

B.E/B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2009

Second Semester

EC 2151 ELECTRIC CIRCUITS AND ELECTRON DEVICES

(Regulation 2008)

Time: Three hours Maximum: 100 Marks

Answer ALL questions

PART - A (10 2 = 20 Marks)

1. State maximum power transfer theorem.

2. Draw the dual network for the circuit shown below:

3. A coil of 20 resistance has an inductance of 0.2H and is connected in parallel with a

condenser of 100F capacitance. Calculate the frequency at which the circuit will act as a

non-inductive resistance of R ohms.

4. Find the Q factor of an RLC series circuit given by R= 5, L= 40mH and C= 1F.

5. Why does reverse saturation current vary with temperature in diodes?

6. Define forbidden gap.

7. In a common base connection, the emitter current is 1mA, I

CBO

= 50A, = 0.92. Find the

total collector current.

8. Mention the disadvantage of JFET compared to BJT.

9. Briefly explain why SCR cannot be used as a bidirectional switch.

10. How is turn-off of SCR made?

PART - B (5 16 = 80 Marks)

11. (a) A current source is applied to a parallel combination of R, L and C where R= 10,

L= 1H and C= 1F.

(i) Compute the resonant frequency.

(ii) Find the quality factor.

(iii) Calculate the value of the bandwidth.

(iv) Compute the lower and upper frequency points of the bandwidth.

(44 = 16)

Or

(b) A network having Thevenins equivalent of voltage E

g

in series with R

g

supplies a

load of R

L

through a transmission line of resistance R

T

. If E

g

= 100 volts, R

g

= 20

and R

L

= 10, determine the value of R

T

so that the power transferred to the load is

maximum. (16)

12. (a) A series RLC circuit has R= 50, L= 0.2H and C= 50F. Constant voltage of 100V

is impressed upon the circuit at t= 0. Find the expression for the transient current

assuming initially relaxed conditions. (16)

Or

(b) A constant current source of 10A is suddenly applied at t= 0 on RL parallel circuit

with R= 100 and L= 1H. Determine

(i) the time constant of circuit (2)

(ii) the voltage across and the current in the inductance at t= 0 and t . (8)

(iii) The voltage V(t) of the inductance for t > 0. (6)

13. (a) In a semiconductor at room temperature (300K) the intrinsic carrier concentration and

resistivity are 1.5x 10

16

/cm

3

and 2x10

3

m respectively. It is converted into an

extrinsic semiconductor with a doping concentration of 10

20

/cm

3

. For the extrinsic

semiconductors calculate the

(i) Minority carrier concentration

(ii) Resistivity

(iii) Shift in fermilevel due to doping.

(iv) Minority carrier concentration when its temperature is increased to a value at

which the intrinsic carries concentration n

i

doubles.

Assume the mobility of majority and minority carriers to be the same and

KT = 26 meV at room temperature. (44 = 16)

Or

(b) Explain the following:

(i) Space charge and diffusion capacitances. (8)

(ii) Zener diode and its characteristics. (8)

14. (a) Present the circuit and explain the structure, operation and characteristics of CE, CB

and CC configurations. Compare their parameters and performances. (16)

Or

(b) Draw the circuit and explain the operation and characteristics of Enhancement and

Depletion mode MOSFETs. (16)

15. (a) Draw the circuit, and the equivalent circuit of SCR. Explain its construction, working,

characteristics, advantages and applications. (16)

Or

(b) Discuss the following:

(i) CCD. (6)

(ii) Phototransistor. (5)

(iii) LED. (5)

B.E/B.Tech. DEGREE EXAMINATION, MAY/JUNE 2009

Second Semester

EC 2151 ELECTRIC CIRCUITS AND ELECTRON DEVICES

(Regulation 2008)

Time: Three hours Maximum: 100 Marks

Answer ALL questions

PART - A (10 2 = 20 Marks)

1. State maximum power transfer theorem.

2. Draw the equivalent circuit with the voltage source between terminals A and B.

3. A 50 Hz sinusoidal voltage V=311 sint is applied to a RL series circuit. If the magnitude

of resistance is 5 and that of inductance is 0.02H. Calculate the effective value of steady

state current and relative phase angle.

4. What is selectivity?

5. Define transition capacitance.

6. What is clipper? List the various types of clipper.

7. What is large signal current gain?

8. Compare any four salient features of BJT with JFET.

9. Draw the equivalent circuit of tunnel diode.

10. What is intrinsic stand-off ratio?

PART - B (5 16 = 80 Marks)

11. (a) Use delta- star conversion to find resistance between terminals AB of the circuit

shown. (16)

(b) (i) State and explain Kirchoffs laws. Determine the current supplied by the voltage

source in the given circuit. (10)

(ii) Find the currents in all the resistors by superposition theorem in the circuit shown.

Calculate the power consumed. (6)

12. (a) Explain the parallel resonance of RLC circuits and derive the Q factor of the same. (16)

Or

(b) Discuss in detail the transient response of series RC circuit with sinusoidal excitation.

Derive the steady state current for the same. (16)

13. (a) Derive the PN diode current equation from the quantitative theory of diode currents.

Or

(b) (i) With a neat circuit diagram, explain the operation of Zener voltage regulator. (8)

(ii) Define and derive the drift and diffusion currents. (8)

14. (a) Explain, how does the construction, operation and also the characteristics of

enhancement MOSFET differ from depletion MOSFET. (16)

Or

(b) (i) Explain the CE configuration of BJT in detail with required diagrams. (10)

(ii) Define and compare , and . (6)

15. (a) Explain the construction and operation of LCD. (16)

(b) (i) Draw and explain the two transistor equivalent model of SCR. (10)

(ii) Draw and explain V- I characteristics of TRIAC. (6)

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