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Massachusetts Institute of Technology

Department of Electrical Engineering and Computer Science


6.002 Circuits & Electronics
Spring 2007
Homework #7
Handout S07-036
Issued 03/22/2007 Due 04/06/2007
Helpfulreadingsforthishomework: Chapter8
Exercise 7.1: Exercise 8.2 from Chapter 8of A&L (page 448).
Exercise 7.2: Exercise 8.6 from Chapter 8of A&L (page 449).
Problem 7.1:
V
S
V
S
R R
v
I
v
MID
v
O
Figure1: Atwo-stage non-invertingMOSFETamplierisshownabove. Inthisproblem,V
I
is
chosensuchthatV
I
=V
MID
=V
O
(a). ShowthattheinputbiasV
I
forwhichV
I
=V
MID
=V
O
is given by:
1 + 1 +2KR(V
S
V
T
)
V
I
=V
T
+
KR
(b). Drawthesmall-signalcircuitfortheamplieranduseittodeterminethesmall-signalgain
G=v
o
/v
i
. ExpressG asafunctionofK,V
T
,V
I
andR.
Problem 7.2: Parts (a), (b)and (c)of Problem 8.2 from Chapter 8of A&L (page 450). In part
(c),determinethesmall-signalgainintermsof g
m
=K(V
IN
V
OUT
V
T
).
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Cite as: Anant Agarwal and Jeffrey Lang, course materials for 6.002 Circuits and Electronics, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
Problem 7.3: This problem examines the behavior andapplication ofa neweldeect transistor
(NewFET) withlarge-signalelectricalcharacteristicsasdescribedinFigure2. Here,itisassumed
thatv
DS
0. Note thatthecoecient K andthethresholdvoltage V
T
arebothpositive and
constant.
i
D
v
GS
v
DS
Figure2: Large-signalcharacteristicsoftheNewFet.
(a). AnamplierisconstructedwiththeNewFETasshowninFigure3. Notethatthisamplier
doesnothavealoadatitsoutput. Deriveanexpressionforv
OUT
asafunctionofv
IN
, in
termsofthepowersupplyvoltageV
S
,theresistanceR,andtheNewFETparametersK and
V
T
. Doso for 0v
IN
V
S
assumingthat 0< V
T
< V
S
.
Figure3: TheNewFetusedasanamplier.
(b). For the amplier shown in Figure 3andanalyzed in part (a),sketchandclearlylabela graph
ofv
OUT
versusv
IN
for 0v
IN
V
S
.
(c). When the NewFET is biased into its active region, its small-signal model is as shown in
Figure4. UsingthemodelshowninFigure4,ndi
d
intermsofg
m
,r
o
,v
gs
,andv
ds
.
(d). AssumingthattheNewFETisbiasedintoitsactiveregion,deriveexpressionsforthesmall-
signal-model parametersg
m
andr
o
intermsofthelarge-signal-modelparametersK andV
T
,
andthebiasvoltagesV
GS
andV
DS
.
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Cite as: Anant Agarwal and Jeffrey Lang, course materials for 6.002 Circuits and Electronics, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
Figure4: Small-signalmodeloftheNewFETwhenbiasedinitsactiveregion.
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Cite as: Anant Agarwal and Jeffrey Lang, course materials for 6.002 Circuits and Electronics, Spring 2007.
MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].