Fourth IEEE International Caracas Conference on Devices, Circuits and Systems, Aruba, April 17-19, 2002

CMOS ANALOG SINE FUNCTION GENERATOR

USING LATERAL-PNP BIPOLAR TRANSISTORS
Murilo Pilon Pessatti and Carlos A. dos Reis Filho
School of Electrical and Computer Engineering
State University of Campinas, UNICAMP
Campinas, SBo Paulo - Brazil
E-mail: Carlos reis@,LPM.fee.unicamp.br
Abshuct - An implementation in CMOS technology
of the ingenious analog sine hnction generator
invented by Barrie Gilbert over two decades ago [ l ]
is described in this paper. New in this circuit is the
use of lateral-pnp bipolar transistors to build the core
of the sine generator together with MOS transistors in
saturation region making up the rest of the circuit.
Experimental results from prototypes of the circuit
fabricated in 0.8pm CMOS technology showed that
the accuracy of the produced sine is lower than what
has been reported from implementations in Bipolar
and BiCMOS [2] technologies. The measured
deviation from ideal sine over the ( 4 2 to +62)
range is less than 0,5%. Total harmonic distortion
measured for a fundamental frequency at 20KHz and
the next four harmonics is approximately 1 %.
I. INTRODUCTION
There are at least three well known techniques for
generating a sine wave: A sinusoidal continuous time
oscillator, for instance a Wien-Bridge oscillator; a
digital function synthesizer [3], which has been
widely used in modem function generators; and
analog sine shapers, which evolved from linear-
segment approximation methods [4] and the use of a
single differential BJT pair [5] to the ingenious
circuit of Barrie Gilbert, which is based on a
hyperbolic tangent series approximation using a
group of differential BJ P pairs [ 1,6]. Clearly, there is
not one only technique which is absolutely better
than the others, since it all depends on the envisaged
application and its requirements. Sinusoidal
oscillators produce quite accurate signals, but are not
always adequate for integration - the need for large
value capacitors, when operating at low frequencies,
is one of those impediments. The digital synthesis,
certainly provides the highest achievable accuracy
and stability, but demands an expressive processing
power, silicon area and energy consumption. The
third alternative, analog sine shapers, are simpler to
implement and occupy small area, but suffer from
thermal drift, offset errors and other imperfections
that are properties of any analog circuit. Despite all
these constraints, the hyperbolic tangent based sine
shaper stands as an attractive option in those cases of
analog-compatible accuracy and area-saving
restrictions.
In CMOS technology the hyperbolic tangent
approach has been used to generate a sine wave with
MOS transistors operating in weak inversion, since in
this mode of operation MOS transistors show a
current versus voltage characteristics that is similar to
BJ Ts [7].
In this paper a similar circuit is described, which is
also implemented in CMOS technology, but using
lateral-pnp bipolar transistors instead and using less
transistors in the sine generation cell than in the
circuit described in [7].
11. PRINCIPLE
Gilberts sine shaper is based on the fact that there is
a pair of exponential functions, whose series exhibit
a very close fit to the sine [I ]. One of those functions
is the hyperbolic tangent.
Coincidentally, this is exactly the function that relates
the current difference at the output of a differential
pair, AIc, of bipolar transistors with the differential
base voltage AE.
AIc =1. tanh- AE (Vt is thethermal voltage)
2.Vt
V
(1)
I1
12
Fig. 1: Gilberts sine shaper with six BJ Ts
Applying this concept to one of Gilberts suggested
circuits, shown in Fig.1, which uses six BJ Ts, the
current difference at the output is related to the input
voltage Va according to the following equation:
0-7803-7380-4102/$17.00 0 2002 IEEE C030 - 1
Where N is the number of transistors in the core and
(3)
111. CMOS IMPLEMENTATION
A simplified schematic of the new implementation is
shown in Fig.2.
Vdd
Vr l
Va
lout
vss
Fig. 2: Lateral-PNP implementation of Gilbert's
sine generator
A temperature-stable bias current, Ibias, derived from
a bandgap reference, is replicated through a p-
channel cascode current mirror to form the tail
currents of the three pnp differential pairs. The
amplitude of this current was adjusted to 50@, as an
adequate compromise between error and efficiency.
Efficiency should be understood in this context as the
ratio of the output current to the tail current.
The output signal, which is the difference between
the altemated sumof the collector currents fromthe
differential pairs, is obtained by mirroring the sum of
collector currents fromQ1, Q4 and Q5 against the
sum of collector currents from the respective pair of
each one of these transistors.
Since the output current is to be converted into
voltage through a transresistance stage (not shown in
the schematic), whose input is referred to the ground,
the collectors of Q1, Q4 and QS are tied to
approximately zero voltage thanks to the Vgs
voltages of M6 and M1. Transistors M5 and M3
improves mirror M2-M4 by forcing the voltage at the
drain of M4 to be approximately near its Vgs.
The input angle-equivalent voltage Va was chosen to
vary from -100mV to +100mV in correspondence
with 360*. As a result, voltages Vrl and Vr2 at the
bases of Q1 and Q6, respectively, were fixed at
+100mV and -100mV, nominal values. Due to
mismatches, and since these voltages are not
adjustable, the extreme values of the input voltage Va
were slightly adjusted in order to produce a complete
period of the sine as illustrated in Fig.3.
Fig. 3: Input: Va from-100mV to +100mV.
Output current: complete sine period
Measurements were done using a semiconductor
parameter analyzer HP4 155A at a temperature
controlled ambient. The temperature was monitored
during the mesurements and showed to be stable at
18'C (_+I'C).
A die photograph of the test chip is shown in Fig.4.
Fig. 4: Die photograph of the test chip
IV. TEMPERATURE DEPENDENCE
A point of concem in this circuit is the strong
influence of the temperature. A solution to this
problem, which was adopted for the implementation
of a commercial product that is based on this
principle, was the use of two identical sine generators
connected to produce an output proportional to the
quotient of their individual outputs [6]. Another
simpler and less efficient yet satisfactory solution, is
to force voltages E and Va to be temperature
C030 - 2
dependent according to the same fimction as Vt. if E
and Va are proportional to the absolute temperature
(PTAT), as is Vt, then both the amplitude and the
argument of the sine will be temperature independent.
These measures were not incorporated into the
described circuit but are being considered for another
implementation, which is currently under
development.
V. EXPERIMENTAL RESULTS
The produced sine was compared with a numerically
calculated sine for a complete range of 360". The
obtained result is shown in Fig.5. Notice that the
measured sine has a peak amplitude of approximately
lo@. For better visualizing, the amplitude of the
error is 10 times enlarged.
1 ,E-05
5.E-06
L
t"
5 O,E+OO
w
--
t
2
S-5.E-OS
0
-1.505
-0.09 -0.05 -0,Ol 0.03 0.07 0.11
Equivalent Angle Input Voltage M
Fig. 5: Comparing the produced sine with an ideal
sine. Error increases rapidly at the extremes of the
range. The amplitude of the error is 10 times
enlarged.
Referring to Fig.5, notice that the produced sine does
not cross zero for zero input voltage due to offset
errors.
The produced signal sensitively departs from an ideal
sine as the input angle approaches the extremes of the
range. On the other hand, in the range ( 4 2 to M2)
the measured error showed a peak that is less than
1%. The learning fromthese results is that it is more
appropriate to use a triangle wave varying from the
equivalent angle of 4 2 to W 2 instead of using the
full sine period for generating a continuous time
sinusoidal signal.
Measured errors from a Bipolar implementation
reported in [6] are less than the values weobtained in
our lateral-pnp CMOS version. This is mainly
because the lateral-pnp's in CMOS goes into high-
injection [8] at relatively low current levels.
The high-injection effect in these transistors can be
seen in Fig.6, which shows a plot of Log(1c) versus
Vbe.
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Fig. 6: Measurement of Log (IC) versus Vbe,
showing the high-injection effect.
The derivative if the Log(1c) curve was also plotted
in order to better visualize the point where the
coefficient of the exponential function that rules the
Ic-Vbe relationship of the transistor departs from one.
The derivative starts bending upwards when Vbe is
approximately 600mV, as the mark point indicates.
As a result, any transfer function that relies on the
exponential characteristics of the involved transistors
will be affected by this effect.
50mV lOOmV -1OOmV -5OmV ov
0 V( E1 2 ) - V( B1) 0 V( E121 - V( B2 ) V V( E3 4 ) - V( B3 )
A V( E3 4 ) - V( B4 ) 0 V( E5 6 1 - V( B5 ) +V( E5 6 ) - V( B6 )
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Fig. 7: SPICE simulation showing the variation of
Vbe for all transistors in the sine generator core.
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Since the Vbe of the transistors cannot be directly
measured in an integrated circuit, some SPICE
simulations of the circuit were done, using the
transistor model provided by the foundry.
Simulation results, as illustrated in Fig.7, shows that
the transistors operate in a region where the
coefficient of its exponent is changing, that is, where
the effect of high-injection is evident.
Moving the transistors from this region into a high-
injection-free region means to lower drastically the
operating current. Unfortunately, other performance
degrading effects arise, which, however, will be
discussed in a future publication.
VI. CONCLUSIONS
This paper described a CMOS implementation using
lateral-pnp bipolar transistors of the ingenious analog
sine function generator invented by Barrie Gilbert.
Prototypes of the circuit were fabricated in a 0 . 8 ~
CMOS technology and showed that the accuracy of
the produced sine wave is slightly lower than those
produced by circuits in Bipolar implementations. The
main cause of errors is the high-injection effect in the
pnps at relatively low currents, altering the
exponential characteristics of the involved transistors,
on which the functioning of the circuit relies. The
measured deviation from an ideal sine wave of less
than 0,5% in the -7rJ2to +62 range is appropriate for
several applications, including the AC excitation of
bridge-type sensors as a replacement for sinusoidal
oscillators.
VII. ACKNOWLEDGMENTS
The authors are indebted to the Instituto de Pesquisas
Eldorado for granting this project and to the lnstituto
Nacional de Tecnologia da Informaciio, ITI,
Campinas, S.P. Brazil for the manufacturing of
prototypes through their multi-project wafer program.
VIII. REFERENCES
[I ] B. Gilbert, Circuits for the Precise Synthesis of
the Sine Function, Electronics Letters, Vol. 13,
[2] C. A. dos Reis Filho and F. Fruett, A BiCMOS
Analog Integrated Circuit f or Vibration
Anulysis, Proceedings of 4 IEEE Intemational
Conference on Electronics, Circuits and Systems,
ICECS97, Cairo, Egypt, December 1997.
[3] J .N. Lygouras, Memory Reduction in Look-Up
Tables for Fast Symmetric Function Generators,
IEEE Transactions on lnstr-mientation and
Measurenient, Vo1.48, No.6, December 1999.
[4] L. Bames, Linear-Segment Approximations to a
Sinewave, Electronic Engineering, pp: 502-508,
September 1968.
[ 5] R. G. Meyer, W. M. C. Sansen, S. Lui and S.
Peeters, The Differential Pair as a Triangle-Sine
Wave Converter, IEEE Journal of Solid-state
Circuits, SC-11, pp:418-420, J une 1976.
[6] B. Gilbert, A Monolithic Mycrosystem for
Analog Synthesis of Trigonometric Functions
and Their Inverses, IEEE Journal of Solid-state
Circuits, SC- 17, No.6, pp: 1 1 79- 1 191, December
1982.
[7] 0. Ishizuka, Z . Tang and H. Matsumoto, MOS
Sine Function Generator Using Exponential-Law
Technique, Electronics Letters, Vol. 21,
pp: 1937-1939, October 1991.
[SI R. S. Muller and T. I. Kamins, Device
Electronics f or Integrated Circuits, New York:
John Wiley & Sons, 1977, chapter-6.
pp:506-508, August 1977.
pp: 1254-1258.
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